JP2009055039A - シリコンウエハー製造方法 - Google Patents
シリコンウエハー製造方法 Download PDFInfo
- Publication number
- JP2009055039A JP2009055039A JP2008217730A JP2008217730A JP2009055039A JP 2009055039 A JP2009055039 A JP 2009055039A JP 2008217730 A JP2008217730 A JP 2008217730A JP 2008217730 A JP2008217730 A JP 2008217730A JP 2009055039 A JP2009055039 A JP 2009055039A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- grinding
- wafer
- tool
- abrasive grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 96
- 239000010703 silicon Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 235000012431 wafers Nutrition 0.000 title abstract description 68
- 238000000926 separation method Methods 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 39
- 239000006061 abrasive grain Substances 0.000 claims description 32
- 238000005498 polishing Methods 0.000 claims description 20
- 238000005520 cutting process Methods 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 description 47
- 239000011449 brick Substances 0.000 description 33
- 230000003746 surface roughness Effects 0.000 description 14
- 238000012545 processing Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 238000005336 cracking Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000003754 machining Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- -1 bronze Chemical class 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
【解決手段】側面を備える矩形のシリコンブロックを切り離すことによって前面及び背面、及び側方縁部を有するシリコンウエハーを製造し、前記切り離し前にシリコンブロック側面をシリコンウエハー縁部に対して平行に研削及び/または研磨する。
【選択図】なし
Description
Vs=π*D*n
(式中、Vsは切断速度、πは3.1416、Dは切断ツール(研削カップ)の直径、nは回転速度を表す)に従って、望ましい切断速度を設定するためにD及びnに関して適当な数値を選定することが可能である。同様な速度を本発明において定義される研磨に用いることも可能である。研削カップの直径を検索されるシリコンブロックの幅よりも実質的に大きくすることも可能である。これにより、直径が200mm以上ある研削カップを用いて、すべての加工段階においてシリコンブロックの全幅を被覆するために、幅のいろいろ異なるシリコンブロック、例えば5インチ、6インチあるいは8インチのシリコンブロックを加工することが可能となる。
工程a1)において、
シリコンブロックの側面が粗面化された中空シリンダ状ツール(研削カップ)を用いて研削され、このツールには平均径が80μm以上、とりわけ90μm以上、160μm以下である切断粒及び/または砥粒が含まれ、
工程a2)において、
平均径が30μm未満、好ましくは20μm未満、特に好ましくは15μm未満であり、さらに最小径が3μmである砥粒及び/または切断粒を含む微粒状化された中空シリンダ状ツールを用いて研削あるいは研磨され、
工程c)において、
前記シリコンブロックが上述したように切断及び/または切り離される、シリコンウエハーの製造方法を提供することである。
Claims (13)
- 側面を備える矩形のシリコンブロックを切り離すことによって形成される、前面及び背面、及び側方縁部を有するシリコンウエハーの製造方法であって、
切り離し前にシリコンブロック側面がシリコンウエハー縁部に対して平行に研削及び/または研磨されることを特徴とする前記方法。 - 前記研削及び/または研磨が、回転型の中空シリンダ状研削ツール及び研磨ツールを用いて行われることを特徴とする請求項1記載の方法。
- 前記中空シリンダ状研削または研磨ツールの径がシリコンブロック幅の少なくとも1.5倍、好ましくは少なくとも1.55倍、特に好ましくは少なくとも1.75倍であることを特徴とする請求項2記載の方法。
- 前記ツールのシリンダ壁に結合性砥粒が含まれることを特徴とする請求項1〜3のいずれかに記載の方法。
- 前記砥粒がダイアモンド、炭化珪素、及び/または窒化珪素から成ることを特徴とする請求項1〜4のいずれかに記載の方法。
- 前記研削ツールに軟金属、ポリマー、及び/または樹脂から選択されるマトリックスが含まれることを特徴とする請求項1〜5のいずれかに記載の方法。
- 前記砥粒の平均径が3μm〜160μmの範囲内であることを特徴とする請求項1〜6のいずれかに記載の方法。
- シリコンブロックの側面が最初に平均径が80μm〜160μmの粗い砥粒を用いて研削され、次いで平均径が3μm〜40μmの砥粒を含む研削ツールを用いて研削あるいは研磨されることを特徴とする請求項1〜7のいずれかに記載の方法。
- ウエハーがワイヤーソーを用いて処理されたシリコンブロックから切り出されることを特徴とする請求項1〜8のいずれかに記載の方法。
- 前記中空シリンダ状ツールの回転軸が処理される面の直交垂線に対して角度0.005〜0.05°だけ傾いていることを特徴とする請求項1〜9の少なくとも1項に記載の方法。
- シリコンブロックが、研削後であって、ウエハーへ切り分けられる前に等方性エッチング処理されることを特徴とする請求項1〜10のいずれかに記載の方法。
- 請求項1〜11のいずれかに記載された方法によって得られるシリコンブロック。
- 請求項1〜11のいずれかに記載された方法によって得られるウエハー。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200710040390 DE102007040390A1 (de) | 2007-08-27 | 2007-08-27 | Verfahren zur Herstellung von Siliziumwafern |
DE102007040385A DE102007040385A1 (de) | 2007-08-27 | 2007-08-27 | Verfahren zur Herstellung von Siliziumwafern |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009055039A true JP2009055039A (ja) | 2009-03-12 |
Family
ID=40083722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008217730A Pending JP2009055039A (ja) | 2007-08-27 | 2008-08-27 | シリコンウエハー製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20090060821A1 (ja) |
EP (2) | EP2030733B1 (ja) |
JP (1) | JP2009055039A (ja) |
AT (1) | ATE483553T1 (ja) |
DE (1) | DE502008001471D1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8460058B2 (en) | 2010-06-09 | 2013-06-11 | Okamoto Machine Tool Works, Ltd. | Complex apparatus and method for polishing an ingot block |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI510682B (zh) * | 2011-01-28 | 2015-12-01 | Sino American Silicon Prod Inc | 晶棒表面奈米化製程、晶圓製造方法及其晶圓 |
TW201808572A (zh) | 2012-05-02 | 2018-03-16 | 新加坡商Memc新加坡有限公司 | 用於鑄錠研磨之系統及方法 |
Citations (2)
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JP2004351553A (ja) * | 2003-05-28 | 2004-12-16 | Noritake Co Ltd | 縦型ロータリ研削盤 |
JP2007208060A (ja) * | 2006-02-02 | 2007-08-16 | Sharp Corp | シリコンウエハの製造方法、シリコンウエハおよびシリコンブロック |
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US4331452A (en) * | 1980-08-04 | 1982-05-25 | Fairchild Camera And Instrument Corporation | Apparatus for crystal shaping |
DE3728693A1 (de) | 1987-08-27 | 1989-03-09 | Wacker Chemitronic | Verfahren und vorrichtung zum aetzen von halbleiteroberflaechen |
JP2903916B2 (ja) * | 1992-11-30 | 1999-06-14 | 信越半導体株式会社 | 半導体インゴット加工方法 |
US5715806A (en) * | 1994-12-15 | 1998-02-10 | Sharp Kabushiki Kaisha | Multi-wire saw device for slicing a semi-conductor ingot into wafers with a cassette for housing wafers sliced therefrom, and slicing method using the same |
JPH08298251A (ja) * | 1995-02-28 | 1996-11-12 | Shin Etsu Handotai Co Ltd | 薄板の製造方法 |
MY119304A (en) * | 1997-12-11 | 2005-04-30 | Shinetsu Handotai Kk | Silicon wafer etching method and silicon wafer etchant |
JP2000047039A (ja) * | 1998-07-29 | 2000-02-18 | Shin Etsu Chem Co Ltd | 光ファイバ母材インゴット、及びその製造方法 |
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DE19962136A1 (de) * | 1999-12-22 | 2001-06-28 | Merck Patent Gmbh | Verfahren zur Rauhätzung von Siliziumsolarzellen |
TW511180B (en) | 2000-07-31 | 2002-11-21 | Mitsubishi Chem Corp | Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device |
JP3649393B2 (ja) | 2000-09-28 | 2005-05-18 | シャープ株式会社 | シリコンウエハの加工方法、シリコンウエハおよびシリコンブロック |
JP3648239B2 (ja) | 2000-09-28 | 2005-05-18 | シャープ株式会社 | シリコンウエハの製造方法 |
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-
2008
- 2008-08-25 US US12/197,523 patent/US20090060821A1/en not_active Abandoned
- 2008-08-25 US US12/197,498 patent/US7909678B2/en not_active Expired - Fee Related
- 2008-08-26 AT AT08015053T patent/ATE483553T1/de active
- 2008-08-26 DE DE502008001471T patent/DE502008001471D1/de active Active
- 2008-08-26 EP EP08015053A patent/EP2030733B1/de not_active Not-in-force
- 2008-08-26 EP EP08015054A patent/EP2031101A3/de not_active Withdrawn
- 2008-08-27 JP JP2008217730A patent/JP2009055039A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004351553A (ja) * | 2003-05-28 | 2004-12-16 | Noritake Co Ltd | 縦型ロータリ研削盤 |
JP2007208060A (ja) * | 2006-02-02 | 2007-08-16 | Sharp Corp | シリコンウエハの製造方法、シリコンウエハおよびシリコンブロック |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8460058B2 (en) | 2010-06-09 | 2013-06-11 | Okamoto Machine Tool Works, Ltd. | Complex apparatus and method for polishing an ingot block |
Also Published As
Publication number | Publication date |
---|---|
US20090061740A1 (en) | 2009-03-05 |
EP2031101A2 (de) | 2009-03-04 |
EP2030733A3 (de) | 2009-10-21 |
EP2030733B1 (de) | 2010-10-06 |
ATE483553T1 (de) | 2010-10-15 |
EP2031101A3 (de) | 2011-05-25 |
DE502008001471D1 (de) | 2010-11-18 |
US20090060821A1 (en) | 2009-03-05 |
US7909678B2 (en) | 2011-03-22 |
EP2030733A2 (de) | 2009-03-04 |
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