JP2009054891A - Method of manufacturing light emitting device - Google Patents

Method of manufacturing light emitting device Download PDF

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JP2009054891A
JP2009054891A JP2007221826A JP2007221826A JP2009054891A JP 2009054891 A JP2009054891 A JP 2009054891A JP 2007221826 A JP2007221826 A JP 2007221826A JP 2007221826 A JP2007221826 A JP 2007221826A JP 2009054891 A JP2009054891 A JP 2009054891A
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led chip
conversion layer
color conversion
support substrate
light
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Kenichiro Tanaka
健一郎 田中
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Panasonic Electric Works Co Ltd
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Panasonic Electric Works Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light emitting device which can make a thinner film of color conversion layer and can reduce color phase irregularity. <P>SOLUTION: The process comprises: forming a color conversion layer 12 on a front side surface (lower side surface in Fig. 1 (a)) of a support substrate 70 (such as a quartz substrate), followed by arranging a color conversion layer 12 so as to be located between the support substrate 70 and an LED chip 11; irradiating a laser light LB, which penetrates the support substrate 70 as shown in Fig. 1 (b), from the other surface side of the support substrate 70 (an upper side in Fig. 1 (a) and (b)), to transfer the color conversion layer 12 onto the LED chip 11 by having the light absorbed by an interface between the color conversion layer 12 and the support substrate 70; and separating the support substrate 70 from the LED chip 11 to produce a light emitting device 10 as shown in Fig. 1(c). <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、ＬＥＤチップ（発光ダイオードチップ）を利用した発光素子の製造方法に関するものである。   The present invention relates to a method for manufacturing a light emitting element using an LED chip (light emitting diode chip).

従来から、ＬＥＤチップと、ＬＥＤチップから放射された光によって励起されてＬＥＤチップとは異なる発光色の光を放射する蛍光体および透光性材料からなる色変換層とを組み合わせ所望の混色光（例えば、白色光）を得るようにした発光素子の研究開発が各所で行われている（例えば、特許文献１，２参照）。   Conventionally, an LED chip is combined with a color conversion layer made of a phosphor and a translucent material that is excited by light emitted from the LED chip and emits light of an emission color different from that of the LED chip. For example, research and development of light-emitting elements capable of obtaining white light (for example, see Patent Documents 1 and 2).

ここにおいて、上記特許文献１，２には、ＬＥＤチップの一表面側にインクジェット法により色変換層を形成する技術が記載されている。
特開２００３−４６１２４号公報 特開２００６−８６１９１号公報 Here, Patent Documents 1 and 2 describe a technique for forming a color conversion layer on one surface side of an LED chip by an ink jet method.
JP 2003-46124 A JP 2006-86191 A

ところで、上記特許文献１，２に開示された発光素子の製造方法のように、インクジェット法によりＬＥＤチップ上に色変換層を直接形成する技術では、ＬＥＤチップの一表面に電極が形成されている場合でも、所望の領域に色変換層を形成することができるという利点があるが、色変換層を薄膜化した場合に表面が荒れてしまい色むらの原因になるという問題があった。   By the way, in the technique of directly forming the color conversion layer on the LED chip by the ink jet method as in the method for manufacturing the light emitting element disclosed in Patent Documents 1 and 2, electrodes are formed on one surface of the LED chip. Even in this case, there is an advantage that the color conversion layer can be formed in a desired region, but there is a problem that when the color conversion layer is thinned, the surface becomes rough and uneven color is caused.

本発明は上記事由に鑑みて為されたものであり、その目的は、色変換層の薄膜化を図りつつ色むらを低減可能な発光素子の製造方法を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide a method for manufacturing a light-emitting element capable of reducing color unevenness while reducing the thickness of a color conversion layer.

請求項１の発明は、ＬＥＤチップと、ＬＥＤチップから放射される光によって励起されてＬＥＤチップよりも長波長の光を放射する蛍光体および透光性材料により形成されＬＥＤチップに積層された色変換層とを備えた発光素子の製造方法であって、支持基板の一表面側に色変換層を形成した後、支持基板とＬＥＤチップとの間に色変換層が位置するように配置し、支持基板を透過するレーザ光を支持基板の他表面側から照射し色変換層と支持基板との界面で吸収させて色変換層をＬＥＤチップ上に転写することを特徴とする。   According to the first aspect of the present invention, a color formed by an LED chip, a phosphor that is excited by light emitted from the LED chip and emits light having a longer wavelength than the LED chip, and a light-transmitting material is stacked on the LED chip. A method for manufacturing a light emitting device comprising a conversion layer, after forming a color conversion layer on one surface side of a support substrate, and placing the color conversion layer between the support substrate and the LED chip, Laser light that passes through the support substrate is irradiated from the other surface side of the support substrate, absorbed at the interface between the color conversion layer and the support substrate, and the color conversion layer is transferred onto the LED chip.

この発明によれば、支持基板の一表面側に色変換層を形成した後、支持基板とＬＥＤチップとの間に色変換層が位置するように配置し、支持基板を透過するレーザ光を支持基板の他表面側から照射し色変換層と支持基板との界面で吸収させて色変換層をＬＥＤチップ上に転写するので、インクジェット法により色変換層をＬＥＤチップ上に直接形成する場合に比べて色変換層の表面の平坦性を向上でき、色変換層の薄膜化を図りつつ色むらを低減可能な発光素子を提供することができる。   According to the present invention, after the color conversion layer is formed on the one surface side of the support substrate, the color conversion layer is disposed between the support substrate and the LED chip, and the laser light transmitted through the support substrate is supported. Irradiated from the other surface side of the substrate and absorbed at the interface between the color conversion layer and the support substrate, and the color conversion layer is transferred onto the LED chip. Thus, it is possible to provide a light-emitting element that can improve the flatness of the surface of the color conversion layer and reduce color unevenness while reducing the thickness of the color conversion layer.

請求項１の発明では、色変換層の薄膜化を図りつつ色むらを低減可能になるという効果がある。   According to the first aspect of the present invention, there is an effect that it is possible to reduce color unevenness while reducing the thickness of the color conversion layer.

本実施形態における発光装置１は、図３に示すように、可視光（本実施形態では、青色光）を放射するＬＥＤチップ１１と、ＬＥＤチップ１１が実装された実装基板２０と、実装基板２０におけるＬＥＤチップ１１の実装面側において実装基板２０との間にＬＥＤチップ１１を囲む形で配設されたドーム状の光学部材４０と、光学部材４０と実装基板２０とで囲まれた空間でＬＥＤチップ１１を封止した封止樹脂からなる封止部５０とを備え、ＬＥＤチップ１１の一表面（光取り出し面）側に、ＬＥＤチップ１１から放射される可視光によって励起されてＬＥＤチップ１１よりも長波長の可視光を放射する蛍光体および透光性材料からなる色変換層１２が積層されている。なお、本実施形態では、ＬＥＤチップ１１と色変換層１２とで発光素子１０を構成している。   As shown in FIG. 3, the light emitting device 1 in the present embodiment includes an LED chip 11 that emits visible light (blue light in the present embodiment), a mounting substrate 20 on which the LED chip 11 is mounted, and a mounting substrate 20. In the space surrounded by the optical member 40 and the mounting substrate 20, the dome-shaped optical member 40 disposed so as to surround the LED chip 11 between the mounting surface 20 of the LED chip 11 and the mounting substrate 20. A sealing portion 50 made of a sealing resin that seals the chip 11, and is excited by visible light emitted from the LED chip 11 on one surface (light extraction surface) side of the LED chip 11 from the LED chip 11. Also, a color conversion layer 12 made of a phosphor that emits visible light having a long wavelength and a translucent material is laminated. In the present embodiment, the LED chip 11 and the color conversion layer 12 constitute the light emitting element 10.

本実施形態における発光装置１では、ＬＥＤチップ１１として、青色光を放射するＧａＮ系青色ＬＥＤチップを用い、色変換層１２の蛍光体として、ＬＥＤチップ１１から放射された青色光によって励起されて黄色光を放射する黄色蛍光体を採用しており、ＬＥＤチップ１１から放射され色変換層１２および封止部５０を透過した青色光と、色変換層１２の蛍光体である黄色蛍光体から放射され封止部５０を透過した黄色光とが光学部材４０の光入射面４０ａへ入射して光学部材４０の光出射面４０ｂから出射されることとなり、白色光を得ることができる。   In the light emitting device 1 according to the present embodiment, a GaN-based blue LED chip that emits blue light is used as the LED chip 11, and the phosphor of the color conversion layer 12 is excited by the blue light emitted from the LED chip 11 and yellow. Employing a yellow phosphor that emits light, the blue light emitted from the LED chip 11 and transmitted through the color conversion layer 12 and the sealing portion 50 and the yellow phosphor that is the phosphor of the color conversion layer 12 are emitted. The yellow light transmitted through the sealing portion 50 enters the light incident surface 40a of the optical member 40 and is emitted from the light emitting surface 40b of the optical member 40, so that white light can be obtained.

ＬＥＤチップ１１は、厚み方向の一表面側（図３における上面側）に一方の電極１１ａ（図１参照）が形成されるとともに、厚み方向の他表面側（図３における上面側）に他方の電極１１ｂ（図１参照）が形成されている。ここにおいて、各電極１１ａ，１１ｂは、下層側のＮｉ膜と上層側のＡｕ膜との積層膜により構成されている。なお、本実施形態では、ＬＥＤチップ１１として、側面からは青色光がほとんど放射されないものを用いている。   The LED chip 11 has one electrode 11a (see FIG. 1) formed on one surface side in the thickness direction (upper surface side in FIG. 3) and the other electrode on the other surface side in the thickness direction (upper surface side in FIG. 3). An electrode 11b (see FIG. 1) is formed. Here, each of the electrodes 11a and 11b is composed of a laminated film of a lower layer Ni film and an upper layer Au film. In the present embodiment, the LED chip 11 that does not emit blue light from the side is used.

実装基板２０は、ＬＥＤチップ１１が一表面側に搭載される矩形板状のサブマウント部材３０と、熱伝導性材料により形成されサブマウント部材３０が一面側の中央部に固着される矩形板状の伝熱板２１と、伝熱板２１の一面側（図３における上面側）に例えばポリオレフィン系の固着シート（図示せず）を介して固着される矩形板状のフレキシブルプリント配線板により形成され中央部にサブマウント部材３０を露出させる矩形状の窓孔２４を有する配線基板２２とで構成されている。したがって、ＬＥＤチップ１１で発生した熱が配線基板２２を介さずにサブマウント部材３０および伝熱板２１に伝熱されるようになっている。   The mounting substrate 20 is a rectangular plate-shaped submount member 30 on which the LED chip 11 is mounted on one surface side, and a rectangular plate shape in which the submount member 30 is formed of a heat conductive material and is fixed to the central portion on the one surface side. The heat transfer plate 21 and a flexible printed wiring board having a rectangular plate shape that is fixed to one surface side (the upper surface side in FIG. 3) of the heat transfer plate 21 via, for example, a polyolefin-based fixing sheet (not shown). The wiring board 22 has a rectangular window hole 24 that exposes the submount member 30 at the center. Therefore, heat generated in the LED chip 11 is transferred to the submount member 30 and the heat transfer plate 21 without passing through the wiring board 22.

上述の伝熱板２１は、Ｃｕからなる金属板２１ａを基礎とし、当該金属板２１ａの厚み方向の両面にＡｕ膜からなるコーティング膜２１ｂが形成されている。   The heat transfer plate 21 is based on a metal plate 21a made of Cu, and a coating film 21b made of an Au film is formed on both surfaces in the thickness direction of the metal plate 21a.

一方、配線基板２２は、ポリイミドフィルムからなる絶縁性基材２２ａの一表面側に、ＬＥＤチップ１１への給電用の一対の配線パターン２３，２３が設けられるとともに、各配線パターン２３，２３および絶縁性基材２２ａにおいて配線パターン２３，２３が形成されていない部位を覆う白色系の樹脂からなるレジスト層２６が積層されている。ここにおいて、ＬＥＤチップ１１は、上記一方の電極１１ａがボンディングワイヤ１４を介して一方の配線パターン２３と電気的に接続され、上記他方の電極１１ｂがサブマウント部材３０の電極パターン３１およびボンディングワイヤ１４を介して他方の配線パターン２３と電気的に接続されている。なお、各配線パターン２３，２３は、絶縁性基材２２ａの外周形状の半分よりもやや小さな外周形状に形成されている。また、絶縁性基材２２ａの材料としては、ＦＲ４、ＦＲ５、紙フェノールなどを採用してもよい。   On the other hand, the wiring substrate 22 is provided with a pair of wiring patterns 23 and 23 for supplying power to the LED chip 11 on one surface side of an insulating base material 22a made of a polyimide film. A resist layer 26 made of a white resin covering a portion where the wiring patterns 23, 23 are not formed in the conductive base material 22a is laminated. Here, in the LED chip 11, the one electrode 11 a is electrically connected to one wiring pattern 23 through the bonding wire 14, and the other electrode 11 b is connected to the electrode pattern 31 of the submount member 30 and the bonding wire 14. It is electrically connected to the other wiring pattern 23 via. Each wiring pattern 23, 23 is formed in an outer peripheral shape slightly smaller than half of the outer peripheral shape of the insulating base material 22a. Further, FR4, FR5, paper phenol or the like may be employed as the material of the insulating base material 22a.

レジスト層２６は、配線基板２２の窓孔２４の近傍において各配線パターン２３，２３の一部が露出し、配線基板２２の周部において各配線パターン２３，２３の他の一部が露出するようにパターニングされており、各配線パターン２３，２３は、配線基板２２の窓孔２４近傍において露出した部位が、ボンディングワイヤ１４が接続される端子部２３ａを構成し、配線基板２２の周部において露出した円形状の部位が外部接続用電極部２３ｂを構成している。なお、配線基板２２の配線パターン２３，２３は、Ｃｕ膜とＮｉ膜とＡｕ膜との積層膜により構成され、最上層がＡｕ膜となっている。   In the resist layer 26, a part of each wiring pattern 23, 23 is exposed in the vicinity of the window hole 24 of the wiring board 22, and the other part of each wiring pattern 23, 23 is exposed in the peripheral part of the wiring board 22. In each wiring pattern 23, 23, a portion exposed in the vicinity of the window hole 24 of the wiring substrate 22 constitutes a terminal portion 23 a to which the bonding wire 14 is connected, and is exposed in the peripheral portion of the wiring substrate 22. The circular portion thus formed constitutes the external connection electrode portion 23b. In addition, the wiring patterns 23 and 23 of the wiring board 22 are comprised by the laminated film of Cu film | membrane, Ni film | membrane, and Au film | membrane, and the uppermost layer is Au film | membrane.

また、サブマウント部材３０は、熱伝導率が比較的高く且つ電気絶縁性を有するＡｌＮにより形成されており、平面サイズをＬＥＤチップ１１のチップサイズよりも大きく設定してあり、伝熱板２１とＬＥＤチップ１１との線膨張率差に起因してＬＥＤチップ１１に働く応力を緩和する応力緩和機能と、ＬＥＤチップ１１で発生した熱を伝熱板２１においてＬＥＤチップ１１のチップサイズよりも広い範囲に伝熱させる熱伝導機能とを有している。したがって、本実施形態における発光装置１では、ＬＥＤチップ１１と伝熱板２１との線膨張率差に起因してＬＥＤチップ１１に働く応力を緩和することができるとともに、ＬＥＤチップ１１で発生した熱をサブマウント部材３０および伝熱板２１を介して効率良く放熱させることができる。   The submount member 30 is made of AlN having a relatively high thermal conductivity and electrical insulation, and has a plane size set larger than the chip size of the LED chip 11. A stress relieving function that relieves stress acting on the LED chip 11 due to a difference in linear expansion coefficient with the LED chip 11, and heat generated in the LED chip 11 in a range wider than the chip size of the LED chip 11 in the heat transfer plate 21. It has a heat conduction function to transfer heat to the. Therefore, in the light emitting device 1 according to the present embodiment, the stress acting on the LED chip 11 due to the difference in linear expansion coefficient between the LED chip 11 and the heat transfer plate 21 can be relaxed, and the heat generated in the LED chip 11 can be reduced. Can be efficiently radiated through the submount member 30 and the heat transfer plate 21.

本実施形態では、サブマウント部材３０の材料として熱伝導率が比較的高く且つ絶縁性を有するＡｌＮを採用しているが、サブマウント部材３０の材料はＡｌＮに限らず、例えば、複合ＳｉＣ、Ｓｉ、Ａｌ２Ｏ３（アルミナ）などを採用してもよい。また、サブマウント部材３０の一表面側には、ＬＥＤチップ１１におけるサブマウント部材３０側の上記他方の電極１１ｂと接合される上述の電極パターン３１が形成され、当該電極パターン３１の周囲に可視光を反射する反射膜３２が形成されている。したがって、ＬＥＤチップ１１から放射された可視光がサブマウント部材３０に吸収されるのを防止することができ、外部への光取出し効率をさらに高めることが可能となる。ここにおいて、電極パターン３１は、Ａｕを主成分とするＡｕとＳｎとの合金（例えば、８０Ａｕ−２０Ｓｎ、７０Ａｕ−３０Ｓｎなど）により形成されている。また、反射膜３２は、Ａｌにより形成されているが、Ａｌに限らず、Ａｇ、Ｎｉ、Ａｕなどにより形成してもよい。 In the present embodiment, AlN having a relatively high thermal conductivity and insulating properties is adopted as the material of the submount member 30, but the material of the submount member 30 is not limited to AlN, for example, composite SiC, Si Al 2 O 3 (alumina) or the like may be used. In addition, on the one surface side of the submount member 30, the above-described electrode pattern 31 that is joined to the other electrode 11 b on the submount member 30 side of the LED chip 11 is formed, and visible light is formed around the electrode pattern 31. Is formed. Therefore, the visible light emitted from the LED chip 11 can be prevented from being absorbed by the submount member 30, and the light extraction efficiency to the outside can be further increased. Here, the electrode pattern 31 is formed of an alloy of Au and Sn containing Au as a main component (for example, 80Au-20Sn, 70Au-30Sn, etc.). The reflective film 32 is made of Al, but is not limited to Al, and may be made of Ag, Ni, Au, or the like.

また、本実施形態における発光装置１では、サブマウント部材３０の厚み寸法を、当該サブマウント部材３０の表面が配線基板２２のレジスト層２６の表面よりも伝熱板２１から離れるように設定してあり、ＬＥＤチップ１１や黄色蛍光体から放射された可視光が配線基板２２の窓孔２４の内周面を通して配線基板２２に吸収されるのを防止することができる。なお、実装基板２０としては、配線パターン（回路パターン）が形成されたアルミナ基板を用いてもよい。   In the light emitting device 1 according to the present embodiment, the thickness dimension of the submount member 30 is set so that the surface of the submount member 30 is farther from the heat transfer plate 21 than the surface of the resist layer 26 of the wiring substrate 22. In addition, visible light emitted from the LED chip 11 or the yellow phosphor can be prevented from being absorbed by the wiring board 22 through the inner peripheral surface of the window hole 24 of the wiring board 22. As the mounting substrate 20, an alumina substrate on which a wiring pattern (circuit pattern) is formed may be used.

上述の封止部５０の材料である封止樹脂としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、例えばエポキシ樹脂などを用いてもよい。   As the sealing resin that is the material of the sealing portion 50 described above, a silicone resin is used. However, the sealing resin is not limited to a silicone resin, and for example, an epoxy resin may be used.

光学部材４０は、透光性材料（例えば、シリコーン樹脂など）の成形品であってドーム状に形成されている。ここで、本実施形態では、光学部材４０をシリコーン樹脂により形成してあるので、光学部材４０と封止部５０との屈折率差および線膨張率差を小さくすることができる。なお、封止部５０の材料がエポキシ樹脂の場合には、光学部材４０もエポキシ樹脂により形成することが好ましい。   The optical member 40 is a molded product of a translucent material (for example, silicone resin) and is formed in a dome shape. Here, in this embodiment, since the optical member 40 is formed of silicone resin, the difference in refractive index and the linear expansion coefficient between the optical member 40 and the sealing portion 50 can be reduced. In addition, when the material of the sealing part 50 is an epoxy resin, it is preferable that the optical member 40 is also formed of an epoxy resin.

上述の色変換層１２は、蛍光体および透光性材料により形成されているが、本実施形態では、蛍光体として上述のように黄色蛍光体を採用し、透光性材料としてシリコーン樹脂を採用している。なお、色変換層１２の材料として用いる透光性材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、ガラス、エポキシ樹脂などを採用してもよい。また、色変換層１２の周部には、ＬＥＤチップ１０の上記一方の電極１１ａを露出させる切欠部が形成されている。   The color conversion layer 12 described above is formed of a phosphor and a translucent material. In this embodiment, the yellow phosphor is employed as the phosphor as described above, and a silicone resin is employed as the translucent material. is doing. The translucent material used as the material of the color conversion layer 12 is not limited to a silicone resin, and for example, an acrylic resin, glass, an epoxy resin, or the like may be employed. Further, a cutout portion that exposes the one electrode 11 a of the LED chip 10 is formed in the peripheral portion of the color conversion layer 12.

以上説明した発光装置１では、ＬＥＤチップ１１から放射される青色光によって励起されて黄色光を放射する黄色蛍光体および透光性材料により形成された色変換層１２がＬＥＤチップ１１の上記一表面側に積層されていることにより、色変換層１２の黄色蛍光体で発生した熱をＬＥＤチップ１１を通して実装基板２０側へ放熱させることができるので、放熱性を向上できる。また、上述の発光装置１は、光学部材４０の光出射面４０ｂを球面の一部により構成してあり、光学部材４０と封止部５０とで構成されるレンズ部が半球状の形状となっているので、点光源として利用することができる。   In the light emitting device 1 described above, the color conversion layer 12 formed of a yellow phosphor that emits yellow light by being excited by the blue light emitted from the LED chip 11 and the translucent material is the one surface of the LED chip 11. By being laminated on the side, the heat generated in the yellow phosphor of the color conversion layer 12 can be radiated to the mounting substrate 20 side through the LED chip 11, so that the heat dissipation can be improved. Further, in the light emitting device 1 described above, the light emitting surface 40b of the optical member 40 is configured by a part of a spherical surface, and the lens portion configured by the optical member 40 and the sealing portion 50 has a hemispherical shape. Therefore, it can be used as a point light source.

ところで、上述のＬＥＤチップ１１と色変換層１２とで構成される発光素子１０の製造にあたっては、例えば、図１（ａ）に示すように、支持基板（例えば、石英基板など）７０の一表面側（図１（ａ）における下面側）に色変換層１２を形成した後、支持基板７０とＬＥＤチップ１１との間に色変換層１２が位置するように配置し（支持基板７０に対してＬＥＤチップ１１を相対的に配置し）、図１（ｂ）に示すように、支持基板７０を透過するレーザ光ＬＢを支持基板７０の他表面側（図１（ａ），（ｂ）における上面側）から照射し色変換層１２と支持基板７０との界面で吸収させて色変換層１２をＬＥＤチップ１１上に転写し、支持基板７０をＬＥＤチップ１１から離すことにより図１（ｃ）に示すような発光素子１０を製造することができる。なお、色変換層１２へのレーザ光ＬＢの照射範囲は、適宜の光学系を利用して調整すればよく、支持基板７０自体を所定の照射範囲へレーザ光ＬＢを導光する形状に設計してもよい。また、支持基板７０においてＬＥＤチップ１１の上記一表面側の電極１１ａに対応する部位に図２に示すように切欠部７１を設ければ、色変換層１２とＬＥＤチップ１１との距離をより短くできる。   By the way, in manufacturing the light emitting element 10 including the LED chip 11 and the color conversion layer 12 described above, for example, one surface of a support substrate (for example, a quartz substrate) 70 as shown in FIG. After the color conversion layer 12 is formed on the side (the lower surface side in FIG. 1A), the color conversion layer 12 is disposed between the support substrate 70 and the LED chip 11 (with respect to the support substrate 70). LED chip 11 is relatively disposed), and as shown in FIG. 1B, the laser beam LB transmitted through the support substrate 70 is transmitted to the other surface side of the support substrate 70 (the upper surface in FIGS. 1A and 1B). 1), the color conversion layer 12 is transferred onto the LED chip 11, and the support substrate 70 is separated from the LED chip 11 to obtain the structure shown in FIG. A light emitting device 10 as shown in FIG. Can. The irradiation range of the laser beam LB to the color conversion layer 12 may be adjusted using an appropriate optical system, and the support substrate 70 itself is designed in a shape that guides the laser beam LB to a predetermined irradiation range. May be. Moreover, if the notch part 71 is provided as shown in FIG. 2 in the part corresponding to the electrode 11a on the one surface side of the LED chip 11 in the support substrate 70, the distance between the color conversion layer 12 and the LED chip 11 is further shortened. it can.

上述の支持基板７０の上記一表面側に色変換層１２を形成するにあたって、支持基板７０の平坦な上記一表面上に色変換層１２を、例えば、スクリーン印刷法、回転塗布法（スピンコート法）、インクジェット法などにより形成すればよい。また、支持基板７０の上記一表面に、色変換層１２の所望の厚さ寸法に対応した所定深さの凹部を形成し、当該凹部内に色変換層１２を形成するようにしてもよい。また、支持基板７０として石英基板を用いているが、支持基板７０は、石英基板に限らず、上記レーザ光ＬＢに対して透明な基板であればよい。また、レーザ光ＬＢの光源としては、例えば、紫外レーザを用いればよい。また、色変換層１２と支持基板７０との間に、上記レーザ光ＬＢを吸収する材料からなるレーザ吸収層を設けてもよく、色変換層１２のレーザ吸収率が低い場合には上記レーザ吸収層を設けることが好ましい。上記レーザ吸収層としては、ＬＥＤチップ１１の発光波長で透明な材料を用いればよく、例えば、シリコーン樹脂、アクリル樹脂、ポリカーボネイト樹脂、ガラスなどを用いればよい。また、上記レーザ吸収層の材料は、金属ナノ粒子でもよく、Ａｕ、Ａｇ、Ｃｕなどの粒径が３０〜３００ｎｍのナノ粒子を配置させてもよい。   In forming the color conversion layer 12 on the one surface side of the support substrate 70 described above, the color conversion layer 12 is formed on the flat one surface of the support substrate 70 by, for example, a screen printing method, a spin coating method (spin coating method). ), An inkjet method or the like. Further, a recess having a predetermined depth corresponding to a desired thickness dimension of the color conversion layer 12 may be formed on the one surface of the support substrate 70, and the color conversion layer 12 may be formed in the recess. Further, although the quartz substrate is used as the support substrate 70, the support substrate 70 is not limited to the quartz substrate, and may be any substrate that is transparent to the laser light LB. Further, as the light source of the laser beam LB, for example, an ultraviolet laser may be used. Further, a laser absorption layer made of a material that absorbs the laser beam LB may be provided between the color conversion layer 12 and the support substrate 70. When the laser absorption rate of the color conversion layer 12 is low, the laser absorption is performed. It is preferable to provide a layer. As the laser absorption layer, a material transparent at the emission wavelength of the LED chip 11 may be used. For example, silicone resin, acrylic resin, polycarbonate resin, glass, or the like may be used. The material of the laser absorption layer may be metal nanoparticles, or nanoparticles having a particle size of 30 to 300 nm, such as Au, Ag, and Cu.

本実施形態の発光素子１０の製造方法によれば、上記特許文献１，２のようにインクジェット法により色変換層をＬＥＤチップ上に直接形成する場合に比べて、色変換層１２の表面の平坦性を向上でき、色変換層１２の薄膜化を図りつつ色むらを低減可能な発光素子１０を提供することができる。   According to the method for manufacturing the light emitting element 10 of the present embodiment, the surface of the color conversion layer 12 is flat compared to the case where the color conversion layer is directly formed on the LED chip by the inkjet method as in Patent Documents 1 and 2 above. Thus, it is possible to provide the light-emitting element 10 capable of improving the properties and reducing the color unevenness while reducing the thickness of the color conversion layer 12.

なお、ＬＥＤチップ１１の発光色と色変換層１２における蛍光体の発光色との組み合わせは特に限定するものではなく、例えば、色変換層１２に用いる蛍光体は、黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを併用すれば演色性の高い白色光を得ることができる。また、ＬＥＤチップ１１として、紫外光を放射するＬＥＤチップを採用して、蛍光体として、赤色蛍光体と緑色蛍光体と青色蛍光体とを併用するようにしても白色光を得ることができる。   Note that the combination of the emission color of the LED chip 11 and the emission color of the phosphor in the color conversion layer 12 is not particularly limited. For example, the phosphor used in the color conversion layer 12 is not limited to the yellow phosphor. If a red phosphor and a green phosphor are used in combination, white light with high color rendering can be obtained. Further, white light can be obtained even if an LED chip that emits ultraviolet light is employed as the LED chip 11 and a red phosphor, a green phosphor, and a blue phosphor are used in combination as the phosphor.

実施形態における発光素子の製造方法の説明図である。It is explanatory drawing of the manufacturing method of the light emitting element in embodiment. 同上における発光素子の製造方法の説明図である。It is explanatory drawing of the manufacturing method of the light emitting element in the same as the above. 実施形態における発光装置の概略断面図である。It is a schematic sectional drawing of the light-emitting device in embodiment.

符号の説明Explanation of symbols

１０ 発光素子
１１ ＬＥＤチップ
１２ 色変換層
７０ 支持基板 DESCRIPTION OF SYMBOLS 10 Light emitting element 11 LED chip 12 Color conversion layer 70 Support substrate

Claims (1)

ＬＥＤチップと、ＬＥＤチップから放射される光によって励起されてＬＥＤチップよりも長波長の光を放射する蛍光体および透光性材料により形成されＬＥＤチップに積層された色変換層とを備えた発光素子の製造方法であって、支持基板の一表面側に色変換層を形成した後、支持基板とＬＥＤチップとの間に色変換層が位置するように配置し、支持基板を透過するレーザ光を支持基板の他表面側から照射し色変換層と支持基板との界面で吸収させて色変換層をＬＥＤチップ上に転写することを特徴とする発光素子の製造方法。   Light emission comprising an LED chip, and a color conversion layer formed of a phosphor and a light-transmitting material that is excited by light emitted from the LED chip and emits light having a longer wavelength than the LED chip and laminated on the LED chip A method of manufacturing an element, comprising: forming a color conversion layer on one surface side of a support substrate; then placing the color conversion layer between the support substrate and the LED chip; and transmitting the support substrate with laser light A method for producing a light-emitting element, comprising: irradiating from the other surface side of the support substrate, absorbing the light at the interface between the color conversion layer and the support substrate, and transferring the color conversion layer onto the LED chip.
JP2007221826A 2007-08-28 2007-08-28 Method of manufacturing light emitting device Pending JP2009054891A (en)

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CN103098244A (en) * 2010-09-10 2013-05-08 欧司朗光电半导体有限公司 Method for applying a conversion means to an optoelectronic semiconductor chip and optoelectronic component
JP2013537362A (en) * 2010-09-10 2013-09-30 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Method for depositing conversion material on optoelectronic semiconductor chip and optoelectronic element
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