JP2009033126A5 - - Google Patents
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- Publication number
- JP2009033126A5 JP2009033126A5 JP2008162814A JP2008162814A JP2009033126A5 JP 2009033126 A5 JP2009033126 A5 JP 2009033126A5 JP 2008162814 A JP2008162814 A JP 2008162814A JP 2008162814 A JP2008162814 A JP 2008162814A JP 2009033126 A5 JP2009033126 A5 JP 2009033126A5
- Authority
- JP
- Japan
- Prior art keywords
- organic
- walled carbon
- transistor
- semiconductor
- carbon nanotube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000463 material Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000002109 single walled nanotube Substances 0.000 claims description 7
- 238000002835 absorbance Methods 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920000547 conjugated polymer Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008162814A JP5463631B2 (ja) | 2007-07-04 | 2008-06-23 | 有機トランジスタ材料および有機電界効果型トランジスタ |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007175900 | 2007-07-04 | ||
| JP2007175900 | 2007-07-04 | ||
| JP2008162814A JP5463631B2 (ja) | 2007-07-04 | 2008-06-23 | 有機トランジスタ材料および有機電界効果型トランジスタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009033126A JP2009033126A (ja) | 2009-02-12 |
| JP2009033126A5 true JP2009033126A5 (enExample) | 2011-07-21 |
| JP5463631B2 JP5463631B2 (ja) | 2014-04-09 |
Family
ID=40403255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008162814A Expired - Fee Related JP5463631B2 (ja) | 2007-07-04 | 2008-06-23 | 有機トランジスタ材料および有機電界効果型トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5463631B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011127148A1 (en) * | 2010-04-06 | 2011-10-13 | William Marsh Rice University | Production of highly conductive carbon nanotube-polymer composites |
| JP5648799B2 (ja) * | 2010-12-09 | 2015-01-07 | 独立行政法人理化学研究所 | 単層カーボンナノチューブを用いる熱測定装置 |
| JP5768299B2 (ja) * | 2013-02-28 | 2015-08-26 | 国立大学法人 奈良先端科学技術大学院大学 | ドーパントの選択方法、ドーパント組成物、カーボンナノチューブ−ドーパント複合体の製造方法、シート状材料およびカーボンナノチューブ−ドーパント複合体 |
| JP6459385B2 (ja) * | 2014-10-23 | 2019-01-30 | 日本電気株式会社 | 半導体素子、及び半導体装置 |
| KR102456902B1 (ko) | 2018-09-25 | 2022-10-21 | 도레이 카부시키가이샤 | 카본 나노튜브 복합체 및 그것을 사용한 분산액, 반도체 소자 및 그의 제조 방법, 그리고 반도체 소자를 사용한 무선 통신 장치 및 상품 태그 |
| JP7325084B2 (ja) * | 2019-03-25 | 2023-08-14 | 国立大学法人長岡技術科学大学 | 有機半導体素子 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3993126B2 (ja) * | 2003-04-08 | 2007-10-17 | 独立行政法人科学技術振興機構 | ナノデバイス材料及びそれを用いたナノデバイス |
| JPWO2005045946A1 (ja) * | 2003-11-10 | 2008-06-12 | 松下電器産業株式会社 | 電子機能材料の配向処理方法と薄膜トランジスタ |
| US7662298B2 (en) * | 2005-03-04 | 2010-02-16 | Northwestern University | Separation of carbon nanotubes in density gradients |
| JP4899368B2 (ja) * | 2005-07-29 | 2012-03-21 | ソニー株式会社 | 金属的単層カーボンナノチューブの破壊方法、半導体的単層カーボンナノチューブ集合体の製造方法、半導体的単層カーボンナノチューブ薄膜の製造方法、半導体的単層カーボンナノチューブの破壊方法、金属的単層カーボンナノチューブ集合体の製造方法、金属的単層カーボンナノチューブ薄膜の製造方法、電子素子の製造方法およびカーボンナノチューブｆｅｔの製造方法 |
| JP4982980B2 (ja) * | 2005-07-29 | 2012-07-25 | ソニー株式会社 | 金属的カーボンナノチューブの分離方法、半導体的カーボンナノチューブ薄膜の製造方法、薄膜トランジスタの製造方法および電子素子の製造方法 |
| JP2007103625A (ja) * | 2005-10-04 | 2007-04-19 | Sony Corp | 機能性デバイス及びその製造方法 |
| CN101600650B (zh) * | 2006-08-30 | 2015-04-29 | 西北大学 | 单分散单壁碳纳米管群体及其制造方法 |
-
2008
- 2008-06-23 JP JP2008162814A patent/JP5463631B2/ja not_active Expired - Fee Related
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