JP2009033019A - Substrate treating apparatus, and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the occurrence of a secondary fault by the water leakage of a shutter. <P>SOLUTION: A batch type CVD apparatus for which a cooling water path 42 is laid to the shutter 41 for opening and closing between a treatment chamber 56 and a standby chamber 28 is provided with a water leakage pan 43 for receiving cooling water leaking from the cooling water path 42 and a water discharge path 44 for discharging water leakage accumulated in the water leakage pan 43. The water leakage pan 43 is attached so as to be integrally moved to the shutter 41, the water discharge receiver 44a of the water discharge path 44 is made larger than the range wherein the water discharge port 43f of the water leakage pan 43 is operated integrally with the opening and closing of the shutter 41. The water discharge pipe 44b of the water discharge path 44 is connected to the bottom surface of the water discharge receiver 44a, and the lower end opening is arranged near the bottom wall of the standby chamber 28. At the lower end opening of the water discharge pipe 44b, a water leakage sensor 45 is installed. Since the water leakage from the shutter can be received by the water leakage pan and discharged by the water discharge path, the direct hit and contamination of a wafer by the water leakage are prevented. The water leakage can be alarmed by the water leakage sensor. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a method for manufacturing a semiconductor device, and more particularly to a cooling technique for a lid that closes a processing chamber to be subjected to heat treatment, for example, in a method for manufacturing a semiconductor integrated circuit device (hereinafter referred to as an IC). The present invention relates to a semiconductor wafer (hereinafter referred to as a wafer) on which an IC is manufactured, which is effective for applying thermal treatment such as film formation, oxidation, diffusion and annealing.

In an IC manufacturing method, a batch type vertical hot wall type low pressure CVD apparatus (hereinafter referred to as a batch type CVD apparatus) is widely used in a CVD film forming process for forming a CVD film such as silicon nitride or polysilicon on a wafer. ing.
The batch-type CVD apparatus includes a process tube that is vertically formed to form a processing chamber into which a wafer is loaded, a gas introduction pipe that introduces a raw material gas into the processing chamber, an exhaust pipe that exhausts the processing chamber, and a process tube A heater that is installed outside and heats the processing chamber, a seal cap that serves as a lid for opening and closing the furnace port of the processing chamber, and a boat that is vertically installed on the seal cap and holds a plurality of wafers. ing.
The plurality of wafers are loaded into the processing chamber from the bottom furnace port (boat loading) in a state where they are long aligned and held by the boat. With the furnace port closed by the seal cap, the source gas is introduced into the processing chamber from the gas introduction pipe, and the processing chamber is heated by the heater, whereby the wafer is deposited with the CVD film.

In a conventional batch type CVD apparatus of this type, the atmosphere in the processing chamber is maintained during standby operation (hereinafter referred to as idle operation) before the wafer is loaded into the processing chamber and after the wafer is unloaded from the processing chamber. In order to prevent discharge from the furnace port, the furnace port of the processing chamber is configured to be closed by a shutter as a lid.
Since the shutter is heated by the heated processing chamber, cooling water as a cooling medium for preventing thermal deformation is circulated in the shutter. For example, see Patent Document 1.
Japanese Patent Application Laid-Open No. 2004-23060

However, in a batch type CVD apparatus that circulates cooling water to prevent thermal deformation of the shutter, if the shutter is exposed to a high temperature for a long time or used for a long time, metal destruction or metal deterioration occurs. There was a problem of end. In particular, since the heat fluctuation is large near the cooling water flow path, an accident such as water leakage occurs.
Since the heated boat is located directly under the shutter, in the unlikely event that the leaked cooling water falls and hits the heat-treated wafer directly, or it scatters in a state containing deteriorated metal objects This will cause damage to the wafer.
On the other hand, since it is necessary to open and close the furnace port, the shutter is provided with a drive device for driving the shutter, so it is difficult to take safety measures against water leakage.

  An object of the present invention is to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of preventing the occurrence of a secondary failure due to leakage of cooling liquid from a shutter.

Typical means for solving the above-described problems are as follows.
(1) a processing chamber for processing a substrate;
A standby chamber provided continuously below the processing chamber;
A lid that opens and closes between the processing chamber and the standby chamber;
A cooling liquid passage provided in the lid and through which the cooling liquid flows;
Liquid receiving means provided on the lid for receiving the cooling liquid leaking from the cooling liquid passage;
A substrate processing apparatus comprising:
(2) A method of manufacturing a semiconductor device using the substrate processing apparatus of (1),
Carrying the substrate from the standby chamber into the processing chamber;
Processing the substrate in the processing chamber;
Unloading the substrate from the processing chamber to the standby chamber;
Closing the space between the processing chamber and the standby chamber with the lid body in a state in which the cooling liquid flows in the cooling liquid passage;
A method for manufacturing a semiconductor device comprising:

  According to the above (1) and (2), since the lid is provided with the liquid receiving means for receiving the cooling liquid leaking from the cooling liquid passage, even if the cooling liquid leaks from the lid, It is possible to prevent the occurrence of a secondary failure due to.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

In the present embodiment, the substrate processing apparatus according to the present invention is configured as a batch type CVD apparatus, that is, a batch type vertical hot wall type low pressure CVD apparatus, as shown in FIGS. .
In this embodiment, a pod 2 is used as a carrier (storage container) that stores a wafer 1 as a substrate to be processed.
The pod 2 is formed in a substantially cubic box shape with an opening on one surface, and a cap 4 as a lid for opening and closing the pod 2 is detachably attached to a wafer loading / unloading port 3 as an opening. Yes.

The batch type CVD apparatus 10 includes a housing 11.
A front maintenance port 12 is provided at the front front portion of the front wall 11a of the housing 11 so that maintenance can be performed. Yes.
A pod loading / unloading port 14 is opened on the front wall 11 a of the housing 11 so as to communicate with the inside and outside of the housing 11, and the pod loading / unloading port 14 is opened and closed by a front shutter 15.
A load port 16 is installed on the front front side of the pod loading / unloading port 14, and the pod 2 is placed on the load port 16 for alignment.
The pod 2 is loaded onto the load port 16 by an in-process transfer device (not shown) and also unloaded from the load port 16.

A rotary pod shelf 17 is installed in an upper portion of the housing 11 at a substantially central portion in the front-rear direction, and the rotary pod shelf 17 stores a plurality of pods 2.
That is, the rotary pod shelf 17 includes a support column 18 that is vertically set up and intermittently rotated in a horizontal plane, and a plurality of shelf plates 19 that are radially supported by the support column 18 at the upper, middle, and lower positions. The plurality of shelf boards 19 hold the pod 2 in a state where a plurality of pods 2 are respectively placed.

A pod transfer device 20 is installed between the load port 16 and the rotary pod shelf 17 in the housing 11, and the pod transfer device 20 can move up and down while holding the pod 2 and the pod transfer. It is comprised with the mechanism 20b.
The pod carrying device 20 carries the pod 2 among the load port 16, the rotary pod shelf 17, and the pod opener 21 by continuous operation of the pod elevator 20a and the pod carrying mechanism 20b.

A sub-housing 24 is constructed across the rear end at the lower portion of the substantially central portion of the housing 11 in the front-rear direction. A pair of wafer loading / unloading ports 25 for loading / unloading the wafer 1 into / from the sub-casing 24 are arranged on the front wall 24a of the sub-casing 24 in two vertical rows. A pair of pod openers 21 and 21 are respectively installed at the lower wafer loading / unloading ports 25 and 25.
The pod opener 21 includes a mounting table 22 for mounting the pod 2 and a cap attaching / detaching mechanism 23 for attaching / detaching the cap 4 of the pod 2. The pod opener 21 opens and closes the wafer loading / unloading port 3 of the pod 2 by attaching / detaching the cap 4 of the pod 2 mounted on the mounting table 22 by the cap attaching / detaching mechanism 23.

The sub-case 24 constitutes a transfer chamber 26 that is fluidly isolated from the installation space of the pod transfer device 20 and the rotary pod shelf 17.
A wafer transfer mechanism 27 is installed in the front area of the transfer chamber 26. The wafer transfer mechanism 27 is capable of rotating or linearly moving the wafer 1 in the horizontal direction, and a wafer transfer device 27a. It is comprised with the wafer transfer apparatus elevator 27b for raising / lowering.
As indicated by an imaginary line in FIG. 1, the wafer transfer device elevator 27 b is installed between the right end of the casing 11 and the right end of the front area of the sub casing 24.
By the continuous operation of the wafer transfer device elevator 27b and the wafer transfer device 27a, the tweezer 27c of the wafer transfer device 27a loads (charges) and unloads (discharges) the wafer 1 to and from the boat described later. .

As indicated by an imaginary line in FIG. 1, a boat elevator 29 for raising and lowering a boat 36 described later is provided between the right end portion of the casing 11 and the right end portion of the standby chamber 28 of the sub casing 24. Is installed.
A seal cap 31 serving as a lid is horizontally installed on an arm 30 serving as a coupling device coupled to a lifting platform of the boat elevator 29. The seal cap 31 is configured to support the boat 36 vertically and to close a lower end portion of a processing furnace described later.
The seal cap 31 is made of a metal such as stainless steel and is formed in a disk shape. An O-ring 32 is provided on the upper surface of the seal cap 31 as a seal member that comes into contact with the lower end of the processing furnace.

A rotation mechanism 33 that rotates the boat is installed on the side of the seal cap 31 opposite to the processing furnace. A rotation shaft 34 of the rotation mechanism 33 passes through the seal cap 31 and is connected to the boat 36, and the wafer 1 is rotated by rotating the boat 36.
A drive control unit 35 is electrically connected to the rotation mechanism 33 and the boat elevator 29 by an electric wiring A. The drive control unit 35 controls the rotation mechanism 33 and the boat elevator 29 at a desired timing so as to perform a desired operation.

The boat 36 is made of a heat-resistant material such as quartz or silicon carbide, and holds a plurality of (for example, about 50 to 125) wafers 1 in a horizontal posture and in a state where the centers are aligned with each other in multiple stages. It is configured as follows.
In addition, a plurality of heat insulating plates 37 as heat insulating members are arranged in a horizontal posture in a lower portion of the boat 36, and the heat insulating plates 37 are formed in a disk shape made of a heat resistant material such as quartz or silicon carbide. ing. The heat insulating plate 37 functions to make it difficult for heat from a heater described later to be transmitted to the manifold side.

As indicated by imaginary lines in FIG. 1, a clean unit 38 is installed at the left end of the transfer chamber 26 opposite to the wafer transfer device elevator 27 b side and the boat elevator 29 side. The clean unit 38 includes a supply fan and a dustproof filter, and supplies clean air 39 that is a cleaned atmosphere or an inert gas.
Although not shown, a notch aligner for aligning the circumferential position of the wafer is installed between the wafer transfer device 27a and the clean unit 38.
The clean air 39 blown out from the clean unit 38 is circulated to the notch aligning device, the wafer transfer device 27a, and the boat 36 in the standby chamber 28, and then sucked in by a duct (not shown) and exhausted to the outside of the housing 11. Or is circulated to the primary side (supply side) that is the suction side of the clean unit 38, and is again blown into the transfer chamber 26 by the clean unit 38.

A processing furnace 50 is provided above the standby chamber 28, and a shutter 41 as a lid that opens and closes between the processing chamber and the standby chamber 28 is installed near the ceiling of the standby chamber 28.
As shown in FIGS. 2, 4, and 5, the shutter 41 is sealed by a seal cap between a position where the shutter 41 is brought into contact with the lower end surface of the processing furnace 50 in a sealed state and the lower end surface of the processing furnace 50. It is configured to be retractable to a position where it abuts in a sealed state. The shutter lifting / lowering rotation device 40 is installed on the boat elevator 29 side.
The shutter lifting / lowering rotation device 40 is electrically connected to the drive control unit 35 by the electric wiring E. The drive controller 35 controls the shutter lifting / lowering rotation device 40 at a desired timing so as to perform a desired operation.
The control is not limited to the drive control unit 35, and a control unit may be provided individually.
The shutter 41 is made of a metal material such as stainless steel and is formed in a disk shape as shown in FIGS. 4 and 5. As shown in FIG. 5, the shutter 41 is provided with a cooling water flow passage (hereinafter referred to as a cooling water passage) 42 through which cooling water as a cooling liquid flows.

As shown in FIG. 6, a water leakage pan 43 serving as a liquid receiving means for receiving cooling water leaking from the cooling water passage 42 is provided on the lower side of the shutter 41. It is attached to the shutter 41 so as to operate integrally.
The water leakage pan 43 includes a main body 43a formed in a circular frying pan shape slightly larger than the shutter 41, and the main body 43a is disposed so as to cover the shutter 41 from below. A mounting hole 43b is formed in a part of the outer periphery of the main body 43a, and the water leakage pan 43 is integrated with the connecting portion 41b of the shutter 41 by a connecting member such as a screw from the mounting hole 43b so as to move integrally. It has been.
An elongated pipe-shaped drainage channel 43c is laid on a part of the lower surface of the main body 43a, and an inclined part 43d that slopes downward is formed on a part of the drainage channel 43c.
A plurality of water intakes 43e are opened on the bottom surface of the main body 43a so as to communicate with the drainage channel 43c. A drain port 43f is opened at the lower end of the inclined portion 43d of the drain channel 43c.

A drainage channel 44 serving as a discharge means for discharging the water leaked in the water leakage pan 43 is installed at a position adjacent to the water leakage pan 43 in the standby chamber 28. The drainage channel 44 includes a drainage receptacle 44a, a drainage pipe 44b, and a pair of support members 44c and 44c at the top and bottom.
The drain receiver 44a is formed in a box shape having a substantially rectangular shape in plan view and an upper surface opened. The drain receiver 44a is larger than the range in which the drain outlet 43f of the water leakage pan 43 operates integrally with the opening and closing of the shutter 41. It is set to be. That is, as shown in FIG. 5, at least, the position PO is set within the range of the position PO which does not interfere with the opening of the furnace port from the position PC where the furnace port is closed and the boat and the seal cap are carried into the furnace. ing.
The drain pipe 44b is formed in a rectangular pipe shape with both upper and lower ends opened, and the upper end opening of the drain pipe 44b is connected to the substantially central portion of the bottom surface of the drain receiver 44a. The drain pipe 44b is vertically fixed to the side surface of the standby chamber 28 by a pair of support members 44c and 44c in a vertically standing state.

  The lower end opening of the drain pipe 44 b is disposed in the vicinity of the bottom wall of the standby chamber 28. A water leakage sensor 45 as a water leakage presence / absence detection sensor for detecting water leakage is installed at the lower end opening of the drain pipe 44b. The water leakage sensor 45 is configured to generate an alarm when water leakage is detected.

As shown in FIG. 3, the processing furnace 50 has a heater 52 as a heating mechanism.
The heater 52 has a cylindrical shape and is vertically installed by being supported by a heater base 51 as a holding plate.
A process tube 53 as a reaction tube is disposed concentrically with the heater 52 inside the heater 52. The process tube 53 includes an outer tube 54 as an external reaction tube and an inner tube 55 as an internal reaction tube.
The outer tube 54 is made of, for example, a heat-resistant material such as quartz or silicon carbide, has an inner diameter larger than the outer diameter of the inner tube 55, is formed in a cylindrical shape with the upper end closed, and the lower end opened, and is concentric with the inner tube 55. Is provided.
The inner tube 55 is made of, for example, a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and is formed in a cylindrical shape having upper and lower ends opened. A cylindrical hollow portion of the inner tube 55 forms a processing chamber 56. The processing chamber 56 is configured so that the wafers 1 can be accommodated in a state in which the wafers 1 are arranged in a plurality of stages in the vertical direction in a horizontal posture.
A cylindrical space 57 is formed by a gap between the outer tube 54 and the inner tube 55.

A manifold 59 is disposed below the outer tube 54 concentrically with the outer tube 54. The manifold 59 is made of, for example, stainless steel and has a cylindrical shape with an upper end and a lower end opened.
The manifold 59 is engaged with and supports the outer tube 54 and the inner tube 55. Since the manifold 59 is supported by the heater base 51, the process tube 53 is installed vertically.
A reaction vessel is formed by the process tube 53 and the manifold 59.
An O-ring 58 as a seal member is provided between the manifold 59 and the outer tube 54.

An exhaust pipe 60 is connected to the manifold 59, and the exhaust pipe 60 exhausts the atmosphere in the processing chamber 56. The exhaust pipe 60 is disposed at the lower end portion of the cylindrical space 57 formed by the gap between the outer tube 54 and the inner tube 55 and communicates with the cylindrical space 57.
An exhaust device 63 such as a vacuum pump is connected to the downstream side of the exhaust pipe 60 opposite to the connection side with the manifold 59 via a pressure sensor 61 and a pressure adjusting device 62 as pressure detectors. The apparatus 63 evacuates so that the pressure in the processing chamber 56 becomes a predetermined pressure (degree of vacuum).
A pressure control unit 64 is electrically connected to the pressure sensor 61 and the pressure adjusting device 62 by an electric wiring B. Based on the pressure detected by the pressure sensor 61, the pressure control unit 64 controls the pressure adjusting device 62 at a desired timing so that the pressure in the processing chamber 56 becomes a desired pressure.

A nozzle 65 as a gas introduction part is connected to the seal cap 31 so as to communicate with the inside of the processing chamber 56, and a gas supply pipe 66 is connected to the nozzle 65.
A gas supply source 68 is connected to an upstream side of the gas supply pipe 66 opposite to the connection side with the nozzle 65 via an MFC (mass flow controller) 67 as a gas flow rate controller. The gas supply source 68 supplies a processing gas and an inert gas.
A gas flow rate control unit 69 is electrically connected to the MFC 67 by an electric wiring C. The gas flow rate control unit 69 controls the MFC 67 at a desired timing so that the flow rate of the supplied gas becomes a desired amount.

A temperature sensor 70 as a temperature detector is installed in the process tube 53.
A temperature control unit 71 is electrically connected to the heater 52 and the temperature sensor 70 by an electric wiring D. Based on the temperature information detected by the temperature sensor 70, the temperature control unit 71 controls the power supply to the heater 52 at a desired timing so that the temperature in the processing chamber 56 has a desired temperature distribution.

The drive control unit 35, the pressure control unit 64, the gas flow rate control unit 69, and the temperature control unit 71 also constitute an operation unit and an input / output unit, and are electrically connected to the main control unit 72 that controls the batch type CVD apparatus 10 as a whole. It is connected.
The drive control unit 35, the pressure control unit 64, the gas flow rate control unit 69, the temperature control unit 71, and the main control unit 72 constitute a controller 73.

  Next, a film forming process in an IC manufacturing method according to an embodiment of the present invention using the batch type CVD apparatus having the above configuration will be described.

As shown in FIGS. 1 and 2, when the pod 2 is supplied to the load port 16, the pod loading / unloading port 14 is opened by the front shutter 15, and the pod 2 above the load port 16 is connected to the pod transfer device. 20 is carried into the inside of the housing 11 from the pod loading / unloading port 14.
The loaded pod 2 is automatically transported and delivered by the pod transport device 20 to the designated shelf 19 of the rotary pod shelf 17, temporarily stored, and then one of the pod openers from the shelf 19. 21 and transferred to the mounting table 22 or directly transferred to the pod opener 21 and transferred to the mounting table 22.
At this time, the wafer loading / unloading port 25 of the pod opener 21 is closed by the cap attaching / detaching mechanism 23, and clean air 39 is circulated and filled in the transfer chamber 26.
For example, the transfer chamber 26 is filled with nitrogen gas as clean air 39, so that the oxygen concentration is set to 20 ppm or less, which is much lower than the oxygen concentration inside the housing 11 (atmosphere).

The pod 2 mounted on the mounting table 22 is pressed against the opening edge of the wafer loading / unloading port 25 on the front wall 24a of the sub-casing 24, and the cap 4 is removed by the cap attaching / detaching mechanism 23. The wafer loading / unloading port 3 is opened.
When the pod 2 is opened by the pod opener 21, the wafer 1 is picked up from the pod 2 by the tweezer 27c of the wafer transfer device 27a through the wafer loading / unloading port, aligned with the wafer by the notch alignment device, and then transferred to the transfer chamber 26. It is carried into the waiting room 28 at the rear, and is loaded into the boat 36 (charging).
The wafer transfer device 27 a that has transferred the wafer 1 to the boat 36 returns to the pod 2 and loads the next wafer 2 into the boat 36.

  During the loading operation of the wafer into the boat 36 by the wafer transfer mechanism 27 in the one (upper or lower) pod opener 21, the other (lower or upper) pod opener 21 receives another pod from the rotary pod shelf 17. 2 is transferred by the pod transfer device 20 and transferred, and the opening operation of the pod 2 by the pod opener 21 is simultaneously performed.

When a predetermined number of wafers 1 are loaded into the boat 36, the lower end of the processing furnace 50 closed by the shutter 41 is opened by the shutter 41.
Subsequently, the boat 36 holding the wafer 1 is loaded into the processing furnace 50 when the seal cap 31 is lifted by the boat elevator 29.

Next, the film forming step by the processing furnace 50 will be described.
In the following description, the operation of each part constituting the processing furnace 50 is controlled by the controller 73.

  When the plurality of wafers 1 are loaded into the boat 36 (wafer charge), as shown in FIG. 3, the boat 36 holding the plurality of wafers 1 is lifted by the boat elevator 29 and processed in the processing chamber 56. Is loaded (boat loading). In this state, the seal cap 31 is in a state where the lower end of the manifold 59 is sealed via the O-ring 32.

The processing chamber 56 is exhausted by the exhaust device 63 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 56 is measured by the pressure sensor 61, and the pressure adjusting device 62 is feedback-controlled based on the measured pressure.
Further, the processing chamber 56 is heated by the heater 52 so as to have a desired temperature. At this time, the power supply to the heater 52 is feedback-controlled based on the temperature information detected by the temperature sensor 70 so that the inside of the processing chamber 56 has a desired temperature distribution.
Subsequently, when the boat 36 is rotated by the rotation mechanism 33, the wafer 1 is rotated.

Next, the gas supplied from the gas supply source 68 and controlled to have a desired flow rate by the MFC 67 flows through the gas supply pipe 66 and is introduced into the processing chamber 56 from the nozzle 65.
The introduced gas rises in the processing chamber 56, flows out from the upper end opening of the inner tube 55 into the cylindrical space 57, and is exhausted from the exhaust pipe 60.
The gas contacts the surface of the wafer 1 as it passes through the processing chamber 56, and at this time, a thin film is deposited on the surface of the wafer 1 by a thermal CVD reaction.

  When a preset processing time elapses, an inert gas is supplied from the gas supply source 68, the inside of the processing chamber 56 is replaced with the inert gas, and the pressure in the processing chamber 56 is returned to normal pressure. .

Thereafter, the seal cap 31 is lowered by the boat elevator 29, the lower end of the manifold 59 is opened, and the processed wafer 1 is carried out from the lower end of the manifold 59 to the outside of the process tube 53 while being held by the boat 36 ( Boat unloading).
Thereafter, the processed wafer 1 is taken out from the boat 36 (wafer discharge).

  Next, operations of the shutter and the water leakage pan in the idle operation step of the batch type CVD apparatus will be described.

As shown in FIG. 2, in the idle operation step, the shutter 41 is brought into contact with the lower end surface of the manifold 59 in a sealed state, the processing chamber 56 is closed, and the processing chamber 56 is exhausted as an inert gas. Nitrogen gas is supplied.
Further, the temperature of the processing chamber 56 is maintained at an idle operation temperature (for example, 600 ° C.) that is lower than the processing temperature and easily raised to the processing temperature.
While the idle operation step is being performed on the processing chamber 56, the replacement operation of the processed wafer 1 and the wafer 1 to be processed is simultaneously performed outside the processing chamber 56.
At this time, since the processing chamber 56 is closed by the shutter 41, the atmosphere of the processing chamber 56 is prevented from leaking to the outside, so that the wafer 1 being exchanged has an adverse effect on the atmosphere of the processing chamber 56. It can be prevented from receiving.

Since the processing chamber 56 is maintained at a high temperature even during the idling operation, the shutter 41 that has closed the processing chamber 56 is heated to raise the temperature. When the temperature of the shutter 41 rises, the effect of shutting off the hot air in the processing chamber 56 decreases, so that the wafer 1 outside the processing chamber 56 is adversely affected.
Therefore, in order to prevent an adverse effect due to the temperature rise of the shutter 41, cooling water is circulated through the cooling water passage 42 in the shutter 41, and the shutter 41 is forcibly cooled.

By the way, if the shutter 41 is exposed to a high temperature for a long time or has been used for a long time, the heat fluctuation is large in the vicinity of the cooling water channel 42 and the metal is liable to be broken or deteriorated. there's a possibility that.
Since the heated boat 36 is positioned directly under the shutter 41 during the idle operation step, the leaked cooling water should drop and hit the wafer 1 after the heat treatment directly, or a deteriorated metal object If the cooling water scatters in a state of containing water, it may cause damage to the wafer 1 such as metal contamination.

  However, in the present embodiment, the water leakage pan 43 is provided directly below the shutter 41, and the drainage channel 44 for draining the water accumulated in the water leakage pan 43 downward is provided. Even if the cooling water leaks from the water, it is possible to prevent the occurrence of a secondary failure due to the cooling water.

  According to the embodiment, the following effects can be obtained.

(1) By attaching the water leakage pan to the shutter so as to move integrally, the water leaking from the shutter can be reliably received by the water leakage pan regardless of where the shutter is located. It is possible to reliably prevent the occurrence of a situation where the wafer falls to the boat and hits the wafer directly.

(2) More preferably, a drainage channel for draining the leaked water accumulated in the leaking pan at a position adjacent to the leaking pan may be installed. Thereby, since it is possible to prevent the leakage of water containing the metal contaminants from being scattered, it is possible to prevent metal contamination due to the leakage of water.

(3) More preferably, it is good to form an inclined part in the drainage channel laid in the leaking pan, and to make the drain outlet at the lower end of the slope face the drainage channel. Thereby, since the water leaked in the water leak pan can be reliably guided to the drainage channel, the leakage of the water leak can be more reliably prevented.

(4) More preferably, the size of the drainage receptacle of the drainage channel is set to be larger than the range in which the drainage port of the water leakage pan moves integrally with the opening and closing of the shutter. Thereby, regardless of the location of the shutter, the water leaked in the water leak pan can be reliably received by the drainage channel, so that the leakage of the water leak can be more reliably prevented.

(5) More preferably, the upper end of the drainage pipe is connected to the bottom surface of the drainage receptacle of the drainage channel, and the lower end of the drainage pipe is arranged on the bottom wall of the standby chamber so as to avoid the boat. As a result, the water leak received by the drain receiver can be guided to the bottom wall of the standby chamber through the drain pipe, so that the leakage of the leak water can be more reliably prevented.

(6) More preferably, the upper end of the drain pipe is connected to the bottom surface of the drain receiver of the drain channel, and the lower end of the drain pipe is arranged on the bottom wall of the standby chamber so as to avoid the boat. Thus, for example, if a water leakage sensor is provided in the water leakage pan, there is a risk that the cable of the water leakage sensor may be disconnected due to the opening / closing operation of the shutter, and the water leakage sensor near the shutter is affected by the heat from inside the reactor. Installation is difficult due to thermal damage, but a water leakage sensor can be placed on the bottom wall of the waiting room, away from the high temperature area where thermal damage is received. can do.

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  For example, the cooling liquid is not limited to industrial water, and pure water or other cooling liquids may be used.

  For example, the sub-case may be a pressure-resistant case that can be evacuated.

  For example, the water leakage presence / absence detection sensor may be provided not to be provided at the lower end opening of the drain pipe 44b but to be placed on the bottom wall of the standby chamber 28.

  In the above-described embodiment, the case where the present invention is applied to a batch type CVD apparatus has been described. However, the present invention is not limited to this, and can be applied to all substrate processing apparatuses such as a diffusion apparatus, an annealing apparatus, and an oxidation apparatus.

  The substrate is not limited to a wafer, but may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

A preferred embodiment will be additionally described.
(1) a processing chamber for processing a substrate;
A standby chamber provided continuously below the processing chamber;
A lid that opens and closes between the processing chamber and the standby chamber;
A cooling liquid passage provided in the lid and through which the cooling liquid flows;
Liquid receiving means provided on the lid for receiving the cooling liquid leaking from the cooling liquid passage;
A substrate processing apparatus comprising:
(2) A method of manufacturing a semiconductor device using the substrate processing apparatus of (1),
Carrying the substrate from the standby chamber into the processing chamber;
Processing the substrate in the processing chamber;
Unloading the substrate from the processing chamber to the standby chamber;
Closing the space between the processing chamber and the standby chamber with the lid body in a state in which the cooling liquid flows in the cooling liquid passage;
A method for manufacturing a semiconductor device comprising:
(3) The substrate processing apparatus according to (1), wherein the liquid receiving means operates integrally with an opening / closing operation of the lid.
(4) The substrate processing apparatus according to (1), further comprising a discharging unit that is fixed to a part of the standby chamber so as to be adjacent to the liquid receiving unit and discharges the liquid accumulated in the liquid receiving unit.
(5) The substrate processing apparatus according to (4), wherein the liquid receiving means has an inclined portion in which at least a part of a bottom surface is inclined toward the discharging means.
(6) The substrate processing apparatus according to (5), wherein the discharge means includes a discharge receiving portion having a discharge port in the inclined portion larger than an operation range in which the discharge port is integrally operated with the opening / closing operation of the lid.
(7) The substrate processing apparatus according to any one of (4) and (6), wherein a liquid presence / absence detection sensor for detecting a liquid is provided downstream of the discharge means.
(8) The substrate processing apparatus according to (1), wherein the liquid receiving means is formed of a flat pan-shaped container having a concave surface.
(9) A support lid that carries in and out between the processing chamber and the standby chamber while holding a substrate holder that supports the substrate, and at least the support lid carries the substrate holder out of the processing chamber. The substrate processing apparatus according to (1), further comprising a control unit that controls the lid to close between the processing chamber and the standby chamber when the standby chamber is provided.

1 is a partially omitted perspective view showing a batch type CVD apparatus according to an embodiment of the present invention. It is side surface sectional drawing. It is a longitudinal cross-sectional view which shows a reaction furnace. It is a disassembled perspective view which shows the principal part. It is also a plan view. It is a side view similarly.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate), 2 ... Pod (wafer carrier, storage container), 3 ... Wafer loading / unloading port, 4 ... Cap,
DESCRIPTION OF SYMBOLS 10 ... Batch type CVD apparatus (substrate processing apparatus), 11 ... Housing, 11a ... Front wall, 12 ... Front maintenance port, 13 ... Front maintenance door, 14 ... Pod loading / unloading port, 15 ... Front shutter, 16 ... Load port ,
17 ... Rotary pod shelf, 18 ... post, 19 ... shelf,
20 ... Pod conveying device, 20a ... Pod elevator, 20b ... Pod conveying mechanism,
21 ... Pod opener, 22 ... Mounting table, 23 ... Cap attaching / detaching mechanism,
24 ... Sub housing, 24a ... Front wall, 25 ... Wafer loading / unloading port, 26 ... Transfer chamber,
27 ... Wafer transfer mechanism, 27a ... Wafer transfer device, 27b ... Wafer transfer device elevator, 27c ... Tweezer,
28 ... Standby room, 29 ... Boat elevator, 30 ... Arm, 31 ... Seal cap, 32 ... O-ring,
33 ... Rotating mechanism, 34 ... Rotating shaft, 35 ... Drive controller,
36 ... boat, 37 ... insulation plate,
38 ... clean unit, 39 ... clean air,
40 ... Shutter elevating and rotating device, 41 ... Shutter, 41b ... Connector, 42 ... Cooling water channel (cooling liquid channel),
43 ... Water leakage pan (liquid receiving means), 43a ... Main body, 43b ... Mounting hole, 43c ... Drainage channel, 43d ... Inclined part, 43e ... Water intake port, 43f ... Drainage port,
44 ... Drainage channel (discharge means), 44a ... Drainage receiver, 44b ... Drainage pipe, 44c ... Support member, 45 ... Water leakage sensor (leakage detection sensor),
50 ... Processing furnace, 51 ... Heater base, 52 ... Heater,
53 ... Process tube, 54 ... Outer tube, 55 ... Inner tube, 56 ... Processing chamber, 57 ... Cylindrical space, 58 ... O-ring, 59 ... Manifold,
60 ... exhaust pipe, 61 ... pressure sensor, 62 ... pressure adjusting device, 63 ... exhaust device, 64 ... pressure control unit,
65 ... Nozzle, 66 ... Gas supply pipe, 67 ... MFC, 68 ... Gas supply source, 69 ... Gas flow rate control unit,
70 ... Temperature sensor, 71 ... Temperature controller,
72 ... main control unit, 73 ... controller.

Claims (2)

A processing chamber for processing the substrate;
A standby chamber provided continuously below the processing chamber;
A lid that opens and closes between the processing chamber and the standby chamber;
A cooling liquid passage provided in the lid and through which the cooling liquid flows;
Liquid receiving means provided on the lid for receiving the cooling liquid leaking from the cooling liquid passage;
A substrate processing apparatus comprising: A method of manufacturing a semiconductor device using the substrate processing apparatus of claim 1,
Carrying the substrate from the standby chamber into the processing chamber;
Processing the substrate in the processing chamber;
Unloading the substrate from the processing chamber to the standby chamber;
Closing the space between the processing chamber and the standby chamber with the lid body in a state in which the cooling liquid flows in the cooling liquid passage;
A method for manufacturing a semiconductor device comprising:

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