JP2009016433A - Resist removing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To remove a hardened (carbonized) resist wherein hydrogen is removed by etching. <P>SOLUTION: Plasma gas is given to an wafer W from plasma generation nozzles 31 so as to remove a resist left thereon by dissolution and combustion. In this case, the wafer W is made to pass through deionized water 80 pooled in an immersion tank T by using a conveyance means C, and plasma is given to the wafer W immersed in the deionized water 80. Thus, hydroxyl group radicals are efficiently generated, and hydrogen is supplied to the surface of the hardened (carbonized) resist thereby, and the resist is reformed as a result. Therefore, the entire resist including its surface can be removed by dissolution and combustion. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an apparatus for removing a remaining resist that is used for pattern formation on a substrate such as a semiconductor wafer or a glass substrate.

  In the substrate processing steps as described above, a resist is frequently used as a pattern forming mold, a protective film, and the like. FIG. 8 is a process diagram for explaining a typical example of pattern formation using the resist. A thin film 2 to be patterned is laminated on the substrate 1, and a resist 3 is applied on the thin film 2. Subsequently, the resist is exposed to a pattern and developed to remove the photosensitive portion 4. Thereafter, when dry etching is performed, a pattern is formed on the thin film 2 using the remaining resist 3 as a mold, and when the resist 3 is removed by an ashing process, only the thin film 2 patterned on the substrate 1 remains.

  In the process of removing the resist (ashing process), decomposition / combustion using plasma has been proposed. In the decomposition / combustion, normal ashing gas such as oxygen, hydrogen, nitrogen, argon, and chlorofluorocarbon is converted into plasma and sprayed. However, through dry etching, many ions are struck against the surface layer of the resist, and as shown by reference numeral 3a in FIG. 9, the surface layer is dehydrogenated and hardened (carbonized). Such a hardened resist layer 3a cannot be removed by plasma using the normal ashing gas.

  However, the surface hardened layer 3a of such a resist 3 compensates for the detached hydrogen by irradiating with plasma of hydroxyl (OH) radicals having strong oxidative decomposition power, and is caused by the plasma by the normal ashing gas. It can be removed. Of course, when the surface hardened layer 3a is removed, the inner layer that has not been hardened (carbonized) can be removed by plasma using the normal ashing gas.

On the other hand, Patent Document 1 discloses a prior art in which water is plasma-discharged. The prior art is a plasma discharge treatment in which an anode is placed at the top of a water tank and a cathode immersed in the bottom is placed, and plasma discharge is performed between them to obtain plasma discharge treatment water having a high ozone concentration. It is a water generator.
JP 2006-289236 A

  In the above-mentioned prior art, plasma is generated by discharging between the anode at the top of the water tank and the cathode immersed in the bottom, so that it is efficient in generating ozone, but is suitable for removing resist. Cannot be made into plasma, and it is difficult to maintain a stable discharge.

  An object of the present invention is to provide a resist removal apparatus capable of efficiently generating plasma of hydroxyl (OH) radicals suitable for resist removal.

  The resist removing apparatus of the present invention is an apparatus that removes the resist by irradiating the resist remaining on the substrate with plasma gas from the plasma generating nozzle, between the plasma generating nozzle and the substrate. A water supply source that generates hydroxyl radicals by supplying water is provided.

  According to the above configuration, in order to remove the remaining resist, which is used for pattern formation in a substrate such as a semiconductor wafer or a glass substrate, the resist is obtained by irradiating plasma gas from a plasma generating nozzle. When the water is decomposed and removed, a water supply source is provided, and water is supplied from the water supply source between the plasma generation nozzle and the substrate, thereby efficiently generating hydroxyl radicals.

  Accordingly, by supplying hydrogen by the hydroxyl radicals to the resist surface that has been hardened (carbonized) by dry etching, while stably gasifying a gas suitable for resist removal, including the surface All resists can be removed by decomposition and combustion.

  The resist removing apparatus according to the present invention further includes transport means for moving the substrate relative to the plasma generating nozzle.

  According to said structure, the said board | substrate can be processed continuously by providing further conveying means, such as a roller and a belt, which convey board | substrates, such as the said semiconductor wafer and a glass substrate.

  Furthermore, in the resist removal apparatus of the present invention, the plasma generating nozzle has concentric inner conductors and outer conductors, and applies a high-frequency pulse electric field between the two conductors to cause glow discharge. Plasma is generated to generate plasma, and an excitation gas from a gas supply source is supplied between them to irradiate the substrate with gas that has been converted into plasma under normal pressure from a blow-out port.

  According to the above configuration, plasma can be generated in an atmosphere of normal temperature and normal pressure, and the hardened (carbonized) resist is prevented from rupturing and warping of the substrate, which occurs when processed in a high temperature and vacuum atmosphere. can do.

  In the resist removal apparatus of the present invention, the water supply source is an immersion tank that stores the water and in which the substrate is immersed.

  According to said structure, sufficient water can be easily supplied between the said plasma generation nozzle and a board | substrate.

  Furthermore, in the resist removal apparatus of the present invention, the water supply source is a fountain device that forms a flowing water film on the substrate surface.

  According to said structure, since the board | substrate is not immersed in water but wash | cleaned by running water, the resist residue decomposed | disassembled and burned can also be removed.

  In the resist removal apparatus of the present invention, the water supply source is a sprayer that sprays water between the plasma generation nozzle and the substrate.

  According to said structure, the usage-amount of water can be minimized and it is suitable when using expensive pure water.

  As described above, the resist removing apparatus according to the present invention uses a plasma generation nozzle to irradiate a plasma gas to remove the resist remaining on the substrate. By providing a supply source and supplying water between the plasma generation nozzle and the substrate from the water supply source, hydroxyl radicals are efficiently generated.

  Therefore, by supplying hydrogen with the hydroxyl radicals to the resist surface, which has been hardened (carbonized) by dry etching, while stably gasifying a gas suitable for resist removal, the surface is included. All resists can be removed by decomposition and combustion.

[Embodiment 1]
FIG. 1 is a perspective view showing an overall configuration of a resist removal apparatus S according to an embodiment of the present invention. This resist removing apparatus S generates a plasma, and a plasma generation unit PU that irradiates the plasma onto a wafer W to which a resist to be processed is attached, and a predetermined route that passes the wafer W through the plasma irradiation region. Conveying means C for conveying and an immersion tank T for immersing the wafer W in water are provided. 2 is a perspective view of the plasma generation unit PU in which the line-of-sight direction is different from that in FIG. 1, and FIG. 3 is a partially transparent side view. 1 to 3, the XX direction is the front-rear direction, the Y-Y direction is the left-right direction, the ZZ direction is the up-down direction, the -X direction is the front direction, the + X direction is the rear direction,- Y will be described as a left direction, + Y direction as a right direction, -Z direction as a downward direction, and + Z direction as an upward direction.

  The plasma generation unit PU is a unit capable of generating plasma at room temperature and normal pressure using microwaves. In general, the waveguide 10 propagates microwaves, and one end side of the waveguide 10. A microwave generator 20 that generates a microwave having a predetermined wavelength disposed on the (left side), a plasma generator 30 provided in the waveguide 10, and a microwave disposed on the other end side (right side) of the waveguide 10 A sliding short 40 to be reflected, a circulator 50 for separating the reflected microwave from the microwave emitted to the waveguide 10 so as not to return to the microwave generator 20, and a dummy load for absorbing the reflected microwave separated by the circulator 50 60 and a stub tuner 70 for matching impedance between the waveguide 10 and the plasma generating nozzle 31.

  The waveguide 10 is made of a nonmagnetic metal such as aluminum, has a long tubular shape with a rectangular cross section, and propagates the microwave generated by the microwave generator 20 toward the plasma generator 30 in the longitudinal direction thereof. Is. The waveguide 10 is composed of a connected body in which a plurality of divided waveguide pieces are connected to each other by flange portions, and the first conductor on which the microwave generator 20 is mounted in order from one end side. The wave tube piece 11, the second waveguide piece 12 to which the stub tuner 70 is assembled, and the third waveguide piece 13 provided with the plasma generator 30 are connected. A circulator 50 is interposed between the first waveguide piece 11 and the second waveguide piece 12, and a sliding short 40 is connected to the other end side of the third waveguide piece 13.

  The first waveguide piece 11, the second waveguide piece 12, and the third waveguide piece 13 are each formed into a rectangular tube shape using an upper plate, a lower plate, and two side plates made of a metal flat plate. It is assembled and flange plates are attached to both ends thereof. In addition, you may make it use the rectangular waveguide piece formed by extrusion molding, the bending process of a plate-shaped member, etc., or a non-dividing type | mold waveguide irrespective of the assembly of such a flat plate. In addition, the waveguide is not limited to a rectangular cross section, and for example, a waveguide having an elliptical cross section can be used. Furthermore, not only a nonmagnetic metal but a waveguide can be comprised with the various members which have a waveguide effect | action.

  The microwave generator 20 includes, for example, an apparatus main body portion 21 including a microwave generation source such as a magnetron that generates a microwave of 2.45 GHz, and the microwave generated by the apparatus main body portion 21 inside the waveguide 10. And a microwave transmission antenna 22 that emits light to the outside. In the plasma generation unit PU according to the present embodiment, for example, a continuously variable microwave generator 20 that can output microwave energy of 1 W to 3 kW is preferably used.

  As shown in FIG. 3, the microwave generation device 20 has a configuration in which a microwave transmission antenna 22 protrudes from the device main body 21, and is fixed in a mode of being placed on the first waveguide piece 11. Has been. Specifically, the apparatus main body 21 is placed on the upper surface plate 11U of the first waveguide piece 11, and the microwave transmitting antenna 22 is inside the first waveguide piece 11 through the through hole 111 formed in the upper surface plate 11U. The waveguide space 110 is fixed so as to protrude. With this configuration, the microwave of 2.45 GHz, for example, emitted from the microwave transmission antenna 22 is directed from one end side (left side) to the other end side (right side) by the waveguide 10. Propagated.

The plasma generation unit 30 includes five plasma generation nozzles 31 that are arranged in a row in the left-right direction on the lower surface plate 13B of the third waveguide piece 13 (the surface facing the workpiece to be processed). Configured. The width of the plasma generation unit 30, that is, the arrangement width in the left-right direction of the five plasma generation nozzles 31 is a width that substantially matches the size in the width direction orthogonal to the transfer direction F of the wafer W. As a result, plasma processing can be performed on the entire surface of the wafer W (the surface facing the lower surface plate 13B) while the wafer W is being transferred by the transfer means C. Note that the arrangement interval of the five plasma generation nozzles 31 is preferably determined according to the wavelength λ _{G of the} microwave propagating in the waveguide 10. For example, it is desirable to arrange the plasma generating nozzles 31 at a ½ pitch and a ¼ pitch of the wavelength λ _{G. When} a microwave of 2.45 GHz is used, since λ _G = 230 mm, 115 mm (λ _G / 2) The plasma generating nozzles 31 may be arranged at a pitch or 57.5 mm (λ _G / 4) pitch.

  4 is an enlarged side view showing two plasma generation nozzles 31 (one plasma generation nozzle 31 is drawn as an exploded view), and FIG. 5 is a cross-sectional view taken along line AA in FIG. The plasma generating nozzle 31 includes a central conductor 32 (inner conductor), a nozzle body 33 (outer conductor), a nozzle holder 34, a seal member 35, and a protective tube 36.

  The center conductor 32 is made of a highly conductive metal such as copper, aluminum, or brass, and is made of a rod-like member having a diameter of about 1 to 5 mm. The upper end 321 side of the center conductor 32 is a lower plate 13B of the third waveguide piece 13. While vertically penetrating and projecting into the waveguide space 130 by a predetermined length (this projecting portion is referred to as a receiving antenna unit 320), the lower end 322 is substantially flush with the lower end edge 331 of the nozzle body 33. Is arranged. Microwave energy (microwave power) is applied to the central conductor 32 when the receiving antenna unit 320 receives the microwave propagating through the waveguide 10. The central conductor 32 is held by a seal member 35 at a substantially intermediate portion in the length direction.

  The nozzle body 33 is a cylindrical body made of a highly conductive metal and having a cylindrical space 332 that houses the central conductor 32. The nozzle holder 34 is also made of a highly conductive metal, and has a relatively large-diameter lower holding space 341 that holds the nozzle body 33 and a relatively small-diameter upper holding space 342 that holds the seal member 35. It is a state. On the other hand, the seal member 35 is made of a heat-resistant resin material such as Teflon (registered trademark) or an insulating member such as ceramic, and has a holding hole 351 for holding the central conductor 32 fixedly on its central axis. It consists of a body.

  The nozzle body 33 is provided in an annularly projecting manner from the upper side, an upper body part 33U fitted in the lower holding space 341 of the nozzle holder 34, an annular recess 33S for holding a gas seal ring 37 described later. A flange portion 33F and a lower body portion 33B protruding from the nozzle holder 34 are provided. The upper body 33U is provided with a communication hole 333 for supplying a predetermined excitation gas to the cylindrical space 332.

  The nozzle body 33 functions as an external conductor disposed around the central conductor 32. The central conductor 32 is a cylindrical space with a predetermined annular space H (insulation interval) secured around it. It is inserted on the central axis of 332. The nozzle body 33 has a nozzle holder such that the outer peripheral portion of the upper body portion 33U is in contact with the inner peripheral wall of the lower holding space 341 of the nozzle holder 34 and the upper end surface of the flange portion 33F is in contact with the lower end edge 343 of the nozzle holder 34. 34 is fitted. The nozzle body 33 is preferably attached to the nozzle holder 34 with a detachable fixing structure using, for example, a plunger or a set screw.

  The nozzle holder 34 includes an upper body portion 34U (corresponding approximately to the position of the upper holding space 342) and a lower surface plate 13B that are closely fitted in a through hole 131 formed in the lower surface plate 13B of the third waveguide piece 13. And a lower body portion 34B (substantially corresponding to the position of the lower holding space 341). A gas supply hole 344 for supplying excitation gas to the annular space H is formed in the outer periphery of the lower body portion 34B. Although not shown, a pipe joint or the like for connecting a terminal portion of a gas supply pipe for supplying a predetermined excitation gas is attached to the gas supply hole 344. The gas supply hole 344 and the communication hole 333 of the nozzle body 33 are set so that they are in communication with each other when the nozzle body 33 is fitted into the nozzle holder 34 at a fixed position. A gas seal ring 37 is interposed between the nozzle body 33 and the nozzle holder 34 in order to suppress gas leakage from the abutting portion between the gas supply hole 344 and the communication hole 333.

  A plurality of these gas supply holes 344 and communication holes 333 may be perforated at equal intervals in the circumferential direction, and are not perforated in the radial direction toward the center, but the tube is rotated so that the excitation gas is swirled. Perforated in the tangential direction of the outer peripheral surface of the shaped space 332. Further, the gas supply hole 344 and the communication hole 333 are not perpendicular to the central conductor 32, and may be formed obliquely from the upper end 321 side to the lower end 322 side in order to improve the flow of the excitation gas. Good.

  The seal member 35 has a lower end edge 352 in contact with an upper end edge 334 of the nozzle body 33 and an upper end edge 353 in contact with an upper end locking portion 345 of the nozzle holder 34 in the upper holding space 342 of the nozzle holder 34. Is retained. That is, the upper holding space 342 is assembled so that the seal member 35 supporting the central conductor 32 is fitted and the lower end edge 352 of the nozzle body 33 is pressed by the upper end edge 334. is there.

  The protective tube 36 is made of a transparent quartz glass pipe or the like having a predetermined length, and has an outer diameter substantially equal to the inner diameter of the cylindrical space 332 of the nozzle body 33. The protective tube 36 has a function of preventing abnormal discharge (arcing) at the lower end edge 331 of the nozzle body 33 and radiating a plume P to be described later normally. The cylindrical space 332 is inserted so as to protrude from the edge 331. Note that the entire protective tube 36 may be accommodated in the cylindrical space 332 so that the tip end thereof coincides with the lower end edge 331 or enters the inner side of the lower end edge 331.

  As a result of the plasma generation nozzle 31 being configured as described above, the nozzle body 33, the nozzle holder 34, and the third waveguide piece 13 (waveguide 10) are in a conductive state (the same potential), Since the central conductor 32 is supported by the insulating seal member 35, it is electrically insulated from these members. Therefore, as shown in FIG. 6, when the microwave is received by the receiving antenna unit 320 of the central conductor 32 and the microwave power is supplied to the central conductor 32 in a state where the waveguide 10 is at the ground potential. An electric field concentration portion is formed in the vicinity of the lower end portion 322 and the lower end edge 331 of the nozzle body 33.

  In this state, when the ashing gas (excitation gas) such as oxygen, hydrogen, nitrogen, argon, or flon is supplied from the gas supply hole 344 to the annular space H, the ashing gas is excited by the microwave power. Plasma (ionized gas) is generated near the lower end 322 of the central conductor 32. Although this plasma has an electron temperature of tens of thousands of degrees, the gas temperature is a reactive plasma that is close to the outside temperature (a plasma in which the electron temperature indicated by electrons is extremely high compared to the gas temperature indicated by neutral molecules). It is a plasma generated under normal pressure.

  The excitation gas thus converted into plasma is radiated from the lower end edge 331 of the nozzle body 33 as a plume P by the gas flow provided from the gas supply hole 344. The plume P contains radicals of excitation gas such as oxygen and nitrogen, and the resist 3 can be decomposed and burned. In the plasma generation unit PU according to the present embodiment, since a plurality of plasma generation nozzles 31 are arranged, it is possible to generate a line-shaped plume P extending in the left-right direction.

  The sliding short 40 is provided for optimizing the coupling state between the central conductor 32 provided in each plasma generation nozzle 31 and the microwave propagated inside the waveguide 10. In order to make the standing wave pattern adjustable by changing the reflection position of the microwave by changing the position of the reflection block accommodated in the longitudinal direction (left and right direction) of the waveguide 10. It is connected to the right end of the wave tube piece 13. Therefore, when a standing wave is not used, a dummy load having a radio wave absorption function is attached instead of the sliding short 40.

  The circulator 50 is composed of, for example, a waveguide-type three-port circulator with a built-in ferrite column. Of the microwaves once propagated toward the plasma generator 30, the plasma generator 30 returns without being consumed. The incoming reflected microwave is directed to the dummy load 60 without returning to the microwave generator 20. By arranging such a circulator 50, the microwave generator 20 is prevented from being overheated by the reflected microwave. The dummy load 60 is a water-cooled (or air-cooled) radio wave absorber that absorbs the reflected microwave and converts it into heat.

  The stub tuner 70 is for impedance matching between the waveguide 10 and the plasma generation nozzle 31, and has three stub tuners arranged in series on the upper surface plate 12 U of the second waveguide piece 12 at a predetermined interval. Units 70A to 70C are provided. The three stub tuner units 70 </ b> A to 70 </ b> C have the same structure. By changing the protruding length of the stub 71 protruding into the waveguide space 120 of the second waveguide piece 12, the fixed stub tuner units 70 </ b> A to 70 </ b> C are changed. The standing wave pattern is changed (impedance matching), and the plume P is turned on.

  It should be noted that in the present embodiment, the wafer W is immersed in the pure water 80 in the immersion tank T in the plasma irradiation region with respect to the plasma generation unit PU configured as described above. Then, the plasma is irradiated by the transfer means C while being irradiated with plasma. As shown in FIG. 5, the immersion tank T as a water supply source stores the pure water 80 to such an extent that the wafer W is immersed and the liquid level 81 reaches the tip of the plasma generation nozzle 31. A heater for promoting the reaction, a circulation system for circulating the pure water 80, a filter for collecting resist residues, and the like may be provided as appropriate.

  Referring to FIG. 1, the transfer means C includes a holding member 82 for the wafer W, a guide member 83 for guiding the holding member 82, and a driving means (not shown) for driving the holding member 82. Composed. The holding member 82 includes a frame body 84, a chuck 85 that holds and fixes the wafer W to the frame body 84, and guide pins 86 that extend in the left-right direction from both front and rear ends of the frame body 84. Composed.

  The guide member 83 includes a pair of guide rails 87 and 88 that are formed in a U-shape in which cross sections orthogonal to the transport direction (front-rear direction) F are opposed to each other. The guide rails 87 and 88 are formed in an annular shape with front and rear rising portions 87c and 88c and falling portions 87d and 88d on substantially horizontal portions 87a and 88a; The central portions of the portions 87a and 88a are laid in the immersion bath T as shown in FIG. 3, slopes directed toward the immersion bath T are connected to both sides (front and rear), and wafers are further provided on both sides (front and rear). Horizontal portions for desorption of W are continuous, and the horizontal portions are connected to the falling portions 87d and 88d.

  The driving means includes a chain 89 routed in the guide rails 87 and 88 and a motor or a gear (not shown) that slides the chain 89, and the chain 89 has a predetermined interval. The guide pin 86 is fixed.

  Therefore, when the chain 89 travels in the guide rails 87 and 88 by driving the motor, the frame body 84 connected by the guide pins 86, and thus the wafer W is transported in the transport direction F, and in the immersion tank T, Plasma irradiation by the plasma generation nozzle 31 is sequentially performed.

  It should also be noted that the plasma generating nozzle 31 has a concentric central conductor 32 (inner conductor) and a nozzle body 33 (outer conductor) as shown in FIG. By applying a high-frequency pulse electric field to the substrate, a glow discharge is generated to generate plasma, and an excitation gas from a gas supply source is supplied between them, so that the gas converted into plasma from the blowout port onto the wafer W By using an irradiation structure, plasma can be generated in an atmosphere of normal temperature and normal pressure.

By comprising in this way, a hydroxyl radical (OH < ^- >) can be efficiently generated by supplying the pure water 80 to the plume P in the region near the plasma irradiation region. As shown in FIG. 9, the surface layer 3a of the resist 3 which has been hardened (carbonized) by the removal of hydrogen by dry etching is modified, and oxygen radicals (O ⁻ ) generated from the pure water 80, ozone and excitation It becomes possible to completely remove the resist 3 by decomposing and burning it by radicals caused by gas.

  Further, by further providing a transfer means C for moving the wafer W relative to the plasma generating nozzle 31, the wafer W can be processed continuously. Furthermore, by using the immersion tank T as a water supply source, sufficient pure water 80 can be easily supplied between the plasma generation nozzle 31 and the wafer W.

  Furthermore, when the plasma generating nozzle 31 is configured to generate plasma in a normal temperature / normal pressure atmosphere as shown in FIG. 5, when processing is performed in a high temperature / vacuum atmosphere, reference numerals in FIG. As indicated by 3b, the cured layer 3a may be ruptured (hopping) due to a pressure difference between the inside and outside of the resist 3, but such a problem can be prevented.

  In general, the temperature at which this hopping occurs is 80 ° C. or higher. When hopping occurs, the splashed resist 3 splashes adhere to all parts, making it very difficult to remove. Moreover, the warp of the wafer W can be prevented by processing at normal temperature. The warpage of the wafer W is likely to occur at 80 ° C. or higher. Therefore, ideally, it is desirable to perform the treatment at 80 ° C. or lower, but at 250 ° C. or lower, the hopping and warping can be prevented at a considerable rate.

[Embodiment 2]
FIG. 7 is a perspective view showing the overall configuration of a resist removal apparatus S ′ according to another embodiment of the present invention. This resist removal apparatus S ′ is similar to the above-described resist removal apparatus S, and corresponding portions are denoted by the same reference numerals and description thereof is omitted. In this resist removing apparatus S ′, a glass substrate W ′ having a large area for a liquid crystal panel is an object to be processed. In the plasma generation unit PU ′, the waveguide 10 ′ is a double waveguide piece. 14 and 15 each have ten plasma generating nozzles 31.

  It should be noted that the transport means C ′ is composed of a large number of transport rollers 90 in order to realize continuous processing of the glass substrate W ′. It should also be noted that the water supply source is constituted by a fountain 91 that forms a flowing water film on the surface of the glass substrate W ′.

  Therefore, since the glass substrate W ′ is washed with running water instead of being immersed in water, the resist residue decomposed and burned can be removed.

  In addition, although the function of removing the resist residue is lost, a large amount of water is required for the large-area glass substrate W ′, such as when expensive pure water is used. Therefore, the fountain is used as the water supply source. Instead of the vessel 91, a sprayer that generates mist may be used to minimize the amount of water used.

The resist removal apparatus S according to the embodiment of the present invention has been described above, but the present invention is not limited to this, and for example, the following embodiment can be taken.
(1) In the above embodiment, an example in which a plurality of plasma generating nozzles 31 are arranged in a line is shown. However, the nozzle arrangement may be appropriately determined according to the shape of the workpiece W, the power of microwave power, and the like. The plurality of rows of plasma generating nozzles 31 may be arranged in a matrix or in a staggered arrangement in the conveyance direction of the workpiece W.
(2) Other forms such as a form in which the substrate is nipped between the upper and lower carrying rollers and carried by the robot hand or the like and carried to the plasma generation unit 30 may be used as the conveying means. Good. Or as a conveyance means, the structure which moves the plasma generation nozzle 31 side may be sufficient. That is, the workpiece W and the plasma generation nozzle 31 may be relatively moved on a plane (X, Y plane) intersecting with the plasma irradiation direction (Z direction).
(3) In the above embodiment, a magnetron that generates a microwave of 2.45 GHz is illustrated as a microwave generation source. However, various high-frequency power sources other than the magnetron can be used, and a microwave having a wavelength different from 2.45 GHz. A wave may be used.

  The resist removing apparatuses S and S 'according to the present invention can be suitably applied to removing a resist from a substrate such as a semiconductor wafer W or a glass substrate W'.

It is a perspective view which shows the whole structure of the resist removal apparatus which concerns on this invention. FIG. 2 is a perspective view of a plasma generation unit with a different line-of-sight direction from FIG. 1. It is a partial see-through | perspective side view of a resist removal apparatus. It is a side view which expands and shows two plasma generation nozzles (one plasma generation nozzle is drawn as an exploded view). It is the sectional view on the AA line side of FIG. It is a see-through | perspective side view for demonstrating the generation state of the plasma in a plasma generation nozzle. It is a perspective view which shows the whole structure of the resist removal apparatus which concerns on other embodiment of this invention. It is process drawing for demonstrating a typical example of the pattern formation using the resist to a wafer. It is sectional drawing for demonstrating the quality change by the dry etching of the said resist.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Thin film 3 Resist 3a Hardened resist surface layer 10,10 'Waveguide 20 Microwave generator 30 Plasma generating part 31 Plasma generating nozzle 32 Central conductor 33 Nozzle main body 34 Nozzle holder 40 Sliding short 50 Circulator 60 Dummy Load 70 Stub tuner 80 Pure water 82 Holding member 83 Guide member 84 Frame 85 Chuck 86 Guide pin 87, 88 Guide rail 90 Transport roller 91 Fountain C, C 'Transport means W Wafer T Immersion tank

Claims (6)

An apparatus which removes the resist by irradiating the resist remaining on the substrate with plasma gas from a plasma generating nozzle,
A resist removing apparatus comprising a water supply source for generating hydroxyl radicals by supplying water between the plasma generating nozzle and the substrate.   The resist removing apparatus according to claim 1, further comprising a conveying unit that moves the substrate relative to the plasma generating nozzle.   The plasma generating nozzle has concentric inner and outer conductors, and applies a high-frequency pulse electric field between the two conductors to generate glow discharge and generate plasma between them. 3. The resist removing apparatus according to claim 1, wherein an excitation gas from a gas supply source is supplied to the substrate to irradiate the substrate with a gas that has been made into plasma under normal pressure from a blow-out port.   The resist removal apparatus according to claim 1, wherein the water supply source is an immersion tank that stores the water and in which the substrate is immersed.   The resist removal apparatus according to claim 1, wherein the water supply source is a water fountain that forms a flowing water film on the substrate surface.   The resist removal apparatus according to claim 1, wherein the water supply source is a sprayer that sprays water between the plasma generation nozzle and the substrate.

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