JP2008538653A5 - - Google Patents
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- Publication number
- JP2008538653A5 JP2008538653A5 JP2008507692A JP2008507692A JP2008538653A5 JP 2008538653 A5 JP2008538653 A5 JP 2008538653A5 JP 2008507692 A JP2008507692 A JP 2008507692A JP 2008507692 A JP2008507692 A JP 2008507692A JP 2008538653 A5 JP2008538653 A5 JP 2008538653A5
- Authority
- JP
- Japan
- Prior art keywords
- ring system
- semiconductor material
- organic semiconductor
- substituted
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 11
- 239000000463 material Substances 0.000 claims 8
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- 125000004122 cyclic group Chemical group 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 5
- 125000003710 aryl alkyl group Chemical group 0.000 claims 3
- 125000001424 substituent group Chemical group 0.000 claims 3
- GSOFREOFMHUMMZ-UHFFFAOYSA-N 3,4-dicarbamoylnaphthalene-1,2-dicarboxylic acid Chemical class C1=CC=CC2=C(C(O)=N)C(C(=N)O)=C(C(O)=O)C(C(O)=O)=C21 GSOFREOFMHUMMZ-UHFFFAOYSA-N 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 125000000962 organic group Chemical group 0.000 claims 2
- -1 1,4,5,8-naphthalenetetracarboxylic acid diimide compound Chemical class 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/110,076 US7579619B2 (en) | 2005-04-20 | 2005-04-20 | N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
| PCT/US2006/012520 WO2006115714A1 (en) | 2005-04-20 | 2006-04-05 | Semiconductor materials for thin film transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008538653A JP2008538653A (ja) | 2008-10-30 |
| JP2008538653A5 true JP2008538653A5 (cg-RX-API-DMAC7.html) | 2009-07-02 |
Family
ID=36754252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008507692A Pending JP2008538653A (ja) | 2005-04-20 | 2006-04-05 | 薄膜トランジスタのための半導体材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7579619B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1872416B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2008538653A (cg-RX-API-DMAC7.html) |
| KR (1) | KR20080003813A (cg-RX-API-DMAC7.html) |
| DE (1) | DE602006014128D1 (cg-RX-API-DMAC7.html) |
| TW (1) | TW200644304A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2006115714A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7671202B2 (en) * | 2004-01-26 | 2010-03-02 | Northwestern University | Perylene n-type semiconductors and related devices |
| BRPI0615940A2 (pt) * | 2005-09-15 | 2016-08-23 | Painceptor Pharma Corp | métodos de modular a interação de uma neurotrofina e um receptor de neurotrofina, de tratar dor em um indivíduo, de tratar distúrbio inflamatório em um indivíduo, de tratar um distúrbio neurológico em um indivíduo e de tratar uma doença ou distúrbio associado aos sistemas geniturinário e/ou gastrointestinal de um indivíduo, e, composto |
| US7422777B2 (en) * | 2005-11-22 | 2008-09-09 | Eastman Kodak Company | N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
| US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
| US7569693B2 (en) * | 2006-06-12 | 2009-08-04 | Northwestern University | Naphthalene-based semiconductor materials and methods of preparing and use thereof |
| JP5091449B2 (ja) * | 2006-10-03 | 2012-12-05 | 株式会社日立製作所 | 単分子を利用した有機トランジスタ及びｆｅｔ |
| EP2089398A2 (en) * | 2006-10-25 | 2009-08-19 | Polyera Corporation | Organic semiconductor materials and methods of preparing and use thereof |
| JP5380296B2 (ja) * | 2006-11-17 | 2014-01-08 | ポリエラ コーポレイション | ジイミド系半導体材料ならびにジイミド系半導体材料を調製および使用する方法 |
| US7892454B2 (en) | 2006-11-17 | 2011-02-22 | Polyera Corporation | Acene-based organic semiconductor materials and methods of preparing and using the same |
| JP2010515684A (ja) * | 2007-01-08 | 2010-05-13 | ポリエラ コーポレイション | アレーン−ビス（ジカルボキシイミド）系半導体材料、およびそれを調製するための関連する中間体を調製する方法 |
| US8022214B2 (en) * | 2007-01-24 | 2011-09-20 | Polyera Corporation | Organic semiconductor materials and precursors thereof |
| JP5117763B2 (ja) * | 2007-05-21 | 2013-01-16 | 山本化成株式会社 | 有機トランジスタ |
| US8309955B2 (en) * | 2008-01-07 | 2012-11-13 | The Johns Hopkins University | Devices having high dielectric constant, ionically-polarizable materials |
| US7649199B2 (en) * | 2008-04-11 | 2010-01-19 | Eastman Kodak Company | N-type semiconductor materials in thin film transistors and electronic devices |
| EP2448033A4 (en) * | 2009-06-23 | 2014-07-23 | Sumitomo Chemical Co | ORGANIC ELECTROLUMINESCENCE ELEMENT |
| KR101496931B1 (ko) * | 2009-10-23 | 2015-02-27 | 상하이 인스티튜트 오브 오가닉 케미스트리, 차이니즈 아카데미 오브 사이언시스 | 황을 포함한 헤테로고리-융합된 나프탈렌테트라카르복실산 디이미드 유도체, 이의 제조방법 및 용도 |
| US8212243B2 (en) | 2010-01-22 | 2012-07-03 | Eastman Kodak Company | Organic semiconducting compositions and N-type semiconductor devices |
| US8411489B2 (en) | 2010-04-30 | 2013-04-02 | Eastman Kodak Company | Semiconducting devices and methods of preparing |
| US8530270B2 (en) | 2010-04-30 | 2013-09-10 | Eastman Kodak Company | Methods of preparing semiconductive compositions and devices |
| US20110269966A1 (en) | 2010-04-30 | 2011-11-03 | Deepak Shukla | Semiconducting articles |
| US8314265B2 (en) | 2010-04-30 | 2012-11-20 | Eastman Kodak Company | Aromatic amic acids or amic esters and compositions |
| US8404892B2 (en) | 2010-05-27 | 2013-03-26 | Eastman Kodak Company | Aromatic amic acid salts and compositions |
| US8450726B2 (en) | 2010-05-27 | 2013-05-28 | Eastman Kodak Company | Articles containing coatings of amic acid salts |
| US8431433B2 (en) | 2010-05-27 | 2013-04-30 | Eastman Kodak Company | Methods of providing semiconductor layers from amic acid salts |
| US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
| US8779415B2 (en) | 2012-11-08 | 2014-07-15 | Eastman Kodak Company | Devices containing organic polymeric multi-metallic composites |
| CN103623741B (zh) * | 2013-11-27 | 2015-05-20 | 中国科学院长春应用化学研究所 | 石墨烯分散剂、其制备方法及石墨烯的制备方法 |
| US9315062B2 (en) | 2014-06-09 | 2016-04-19 | Eastman Kodak Company | System for printing lines |
| WO2015191293A1 (en) | 2014-06-11 | 2015-12-17 | Eastman Kodak Company | Devices having dielectric layers with thiosulfate-containing polymers |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2951349A1 (de) | 1979-12-20 | 1981-07-02 | Bayer Ag, 5090 Leverkusen | Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter |
| US4611385A (en) | 1982-06-18 | 1986-09-16 | At&T Bell Laboratories | Devices formed utilizing organic materials |
| US4468444A (en) | 1983-04-21 | 1984-08-28 | Eastman Kodak Company | Pyrylium-sensitized leuco base photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds |
| FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
| JP3373783B2 (ja) * | 1998-05-29 | 2003-02-04 | 京セラミタ株式会社 | ナフタレンテトラカルボン酸ジイミド誘導体及び電子写真用感光体 |
| US6387727B1 (en) * | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
| US7026643B2 (en) | 2001-05-04 | 2006-04-11 | International Business Machines Corporation | Organic n-channel semiconductor device of N,N' 3,4,9,10 perylene tetracarboxylic diimide |
| US6946677B2 (en) * | 2002-06-14 | 2005-09-20 | Nokia Corporation | Pre-patterned substrate for organic thin film transistor structures and circuits and related method for making same |
| JP4405970B2 (ja) * | 2003-12-26 | 2010-01-27 | キヤノン株式会社 | 電子写真感光体、プロセスカートリッジおよび電子写真装置 |
| US7671202B2 (en) | 2004-01-26 | 2010-03-02 | Northwestern University | Perylene n-type semiconductors and related devices |
-
2005
- 2005-04-20 US US11/110,076 patent/US7579619B2/en active Active
-
2006
- 2006-04-05 KR KR1020077023838A patent/KR20080003813A/ko not_active Withdrawn
- 2006-04-05 EP EP06740494A patent/EP1872416B1/en not_active Not-in-force
- 2006-04-05 DE DE602006014128T patent/DE602006014128D1/de active Active
- 2006-04-05 WO PCT/US2006/012520 patent/WO2006115714A1/en not_active Ceased
- 2006-04-05 JP JP2008507692A patent/JP2008538653A/ja active Pending
- 2006-04-19 TW TW095113884A patent/TW200644304A/zh unknown
-
2009
- 2009-05-29 US US12/474,533 patent/US7981719B2/en not_active Expired - Fee Related
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