JP2010534403A5 - - Google Patents
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- Publication number
- JP2010534403A5 JP2010534403A5 JP2010514797A JP2010514797A JP2010534403A5 JP 2010534403 A5 JP2010534403 A5 JP 2010534403A5 JP 2010514797 A JP2010514797 A JP 2010514797A JP 2010514797 A JP2010514797 A JP 2010514797A JP 2010534403 A5 JP2010534403 A5 JP 2010534403A5
- Authority
- JP
- Japan
- Prior art keywords
- heterocycloalkyl
- substituted
- ring system
- thin film
- independently
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/771,196 US7858970B2 (en) | 2007-06-29 | 2007-06-29 | Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors |
| PCT/US2008/007913 WO2009005669A2 (en) | 2007-06-29 | 2008-06-25 | Tetracarboxylic diimide semiconductor for thin film transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010534403A JP2010534403A (ja) | 2010-11-04 |
| JP2010534403A5 true JP2010534403A5 (cg-RX-API-DMAC7.html) | 2011-08-04 |
Family
ID=40159276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010514797A Ceased JP2010534403A (ja) | 2007-06-29 | 2008-06-25 | 薄膜トランジスタのためのテトラカルボン酸ジイミド半導体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7858970B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2162932A2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2010534403A (cg-RX-API-DMAC7.html) |
| CN (1) | CN101849300B (cg-RX-API-DMAC7.html) |
| TW (1) | TW200908408A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2009005669A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5155616B2 (ja) * | 2007-07-25 | 2013-03-06 | 沖プリンテッドサーキット株式会社 | Ｒｆｉｄタグ、ｒｆｉｄシステムおよびｒｆｉｄタグの製造方法 |
| US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
| US8779415B2 (en) | 2012-11-08 | 2014-07-15 | Eastman Kodak Company | Devices containing organic polymeric multi-metallic composites |
| US9541829B2 (en) | 2013-07-24 | 2017-01-10 | Orthogonal, Inc. | Cross-linkable fluorinated photopolymer |
| US9958778B2 (en) | 2014-02-07 | 2018-05-01 | Orthogonal, Inc. | Cross-linkable fluorinated photopolymer |
| CN106688050B (zh) | 2014-06-11 | 2018-09-18 | 伊斯曼柯达公司 | 具有带含硫代硫酸盐聚合物的电介质层的器件 |
| CN104976947A (zh) * | 2015-07-20 | 2015-10-14 | 天津大学 | 一种柔性薄膜场效应晶体管曲率测量传感器 |
| US11022592B2 (en) | 2015-12-02 | 2021-06-01 | University Of Utah Research Foundation | Chemical self-doping of one-dimensional organic nanomaterials for high conductivity application in chemiresistive sensing gas or vapor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2951349A1 (de) * | 1979-12-20 | 1981-07-02 | Bayer Ag, 5090 Leverkusen | Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter |
| US6387727B1 (en) * | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
| KR100561357B1 (ko) * | 2003-11-21 | 2006-03-16 | 삼성전자주식회사 | 나프탈렌테트라카르복시디이미드 유도체 및 이를 이용한전자사진 감광체 |
| US20050214471A1 (en) * | 2003-12-31 | 2005-09-29 | James Theobald | Molecular templating of a surface |
| WO2005076815A2 (en) * | 2004-01-26 | 2005-08-25 | Northwestern University | PERYLENE n-TYPE SEMICONDUCTORS AND RELATED DEVICES |
| CN1938321B (zh) * | 2004-03-29 | 2010-05-05 | 三井化学株式会社 | 新型化合物及使用该化合物的有机电子元件 |
| JP2006045165A (ja) | 2004-08-09 | 2006-02-16 | Mitsui Chemicals Inc | テトラカルボン酸誘導体、および該化合物を用いた電子写真感光体、電子写真装置 |
| US7422777B2 (en) * | 2005-11-22 | 2008-09-09 | Eastman Kodak Company | N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
-
2007
- 2007-06-29 US US11/771,196 patent/US7858970B2/en not_active Expired - Fee Related
-
2008
- 2008-06-25 EP EP08779758A patent/EP2162932A2/en not_active Ceased
- 2008-06-25 CN CN2008800227821A patent/CN101849300B/zh not_active Expired - Fee Related
- 2008-06-25 JP JP2010514797A patent/JP2010534403A/ja not_active Ceased
- 2008-06-25 WO PCT/US2008/007913 patent/WO2009005669A2/en not_active Ceased
- 2008-06-27 TW TW097124451A patent/TW200908408A/zh unknown
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