JP2008538653A - 薄膜トランジスタのための半導体材料 - Google Patents

薄膜トランジスタのための半導体材料 Download PDF

Info

Publication number
JP2008538653A
JP2008538653A JP2008507692A JP2008507692A JP2008538653A JP 2008538653 A JP2008538653 A JP 2008538653A JP 2008507692 A JP2008507692 A JP 2008507692A JP 2008507692 A JP2008507692 A JP 2008507692A JP 2008538653 A JP2008538653 A JP 2008538653A
Authority
JP
Japan
Prior art keywords
thin film
group
semiconductor material
article
organic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008507692A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008538653A5 (enExample
Inventor
シュクラ，ディーパック
フォレスター ネルソン，シェルビー
キャロル フリーマン，ダイアン
Original Assignee
イーストマン コダック カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2008538653A publication Critical patent/JP2008538653A/ja
Publication of JP2008538653A5 publication Critical patent/JP2008538653A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/08—Naphthalimide dyes; Phthalimide dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
JP2008507692A 2005-04-20 2006-04-05 薄膜トランジスタのための半導体材料 Pending JP2008538653A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/110,076 US7579619B2 (en) 2005-04-20 2005-04-20 N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
PCT/US2006/012520 WO2006115714A1 (en) 2005-04-20 2006-04-05 Semiconductor materials for thin film transistors

Publications (2)

Publication Number Publication Date
JP2008538653A true JP2008538653A (ja) 2008-10-30
JP2008538653A5 JP2008538653A5 (enExample) 2009-07-02

Family

ID=36754252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008507692A Pending JP2008538653A (ja) 2005-04-20 2006-04-05 薄膜トランジスタのための半導体材料

Country Status (7)

Country Link
US (2) US7579619B2 (enExample)
EP (1) EP1872416B1 (enExample)
JP (1) JP2008538653A (enExample)
KR (1) KR20080003813A (enExample)
DE (1) DE602006014128D1 (enExample)
TW (1) TW200644304A (enExample)
WO (1) WO2006115714A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4921982B2 (ja) * 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンｎ型半導体及び関連装置
CA2622571A1 (en) * 2005-09-15 2007-03-22 Painceptor Pharma Corporation Methods of modulating neurotrophin-mediated activity
US7422777B2 (en) * 2005-11-22 2008-09-09 Eastman Kodak Company N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
WO2007146250A2 (en) * 2006-06-12 2007-12-21 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
JP5091449B2 (ja) * 2006-10-03 2012-12-05 株式会社日立製作所 単分子を利用した有機トランジスタ及びｆｅｔ
WO2008051552A2 (en) * 2006-10-25 2008-05-02 Northwestern University Organic semiconductor materials and methods of preparing and use thereof
WO2008063583A1 (en) * 2006-11-17 2008-05-29 Polyera Corporation Acene-based organic semiconductor materials and methods of preparing and using the same
WO2008063609A2 (en) * 2006-11-17 2008-05-29 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
EP2104676A2 (en) * 2007-01-08 2009-09-30 Polyera Corporation Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same
US8022214B2 (en) * 2007-01-24 2011-09-20 Polyera Corporation Organic semiconductor materials and precursors thereof
JP5117763B2 (ja) * 2007-05-21 2013-01-16 山本化成株式会社 有機トランジスタ
WO2009089283A2 (en) * 2008-01-07 2009-07-16 The Johns Hopkins University Low-voltage, n-channel hybrid transistors
US7649199B2 (en) * 2008-04-11 2010-01-19 Eastman Kodak Company N-type semiconductor materials in thin film transistors and electronic devices
US20120091449A1 (en) * 2009-06-23 2012-04-19 Sumitomo Chemical Company, Limited Organic electroluminescent element
JP5416282B2 (ja) * 2009-10-23 2014-02-12 中国科学院上海有机化学研究所 硫黄含有複素環が縮合したナフタレンテトラカルボン酸ジイミド誘導体及びその製造方法と応用
US8212243B2 (en) * 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US8450726B2 (en) 2010-05-27 2013-05-28 Eastman Kodak Company Articles containing coatings of amic acid salts
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
US8431433B2 (en) 2010-05-27 2013-04-30 Eastman Kodak Company Methods of providing semiconductor layers from amic acid salts
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
US8779415B2 (en) 2012-11-08 2014-07-15 Eastman Kodak Company Devices containing organic polymeric multi-metallic composites
CN103623741B (zh) * 2013-11-27 2015-05-20 中国科学院长春应用化学研究所 石墨烯分散剂、其制备方法及石墨烯的制备方法
US9315062B2 (en) 2014-06-09 2016-04-19 Eastman Kodak Company System for printing lines
WO2015191293A1 (en) 2014-06-11 2015-12-17 Eastman Kodak Company Devices having dielectric layers with thiosulfate-containing polymers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468444A (en) * 1983-04-21 1984-08-28 Eastman Kodak Company Pyrylium-sensitized leuco base photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2951349A1 (de) 1979-12-20 1981-07-02 Bayer Ag, 5090 Leverkusen Naphthalintetracarbonsaeurediimide als elektrische halbleiter und photoleiter
US4611385A (en) 1982-06-18 1986-09-16 At&T Bell Laboratories Devices formed utilizing organic materials
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
JP3373783B2 (ja) * 1998-05-29 2003-02-04 京セラミタ株式会社 ナフタレンテトラカルボン酸ジイミド誘導体及び電子写真用感光体
US6387727B1 (en) * 1999-03-29 2002-05-14 Agere Systems Guardian Corp. Device comprising n-channel semiconductor material
US7026643B2 (en) 2001-05-04 2006-04-11 International Business Machines Corporation Organic n-channel semiconductor device of N,N' 3,4,9,10 perylene tetracarboxylic diimide
US6946677B2 (en) * 2002-06-14 2005-09-20 Nokia Corporation Pre-patterned substrate for organic thin film transistor structures and circuits and related method for making same
JP4405970B2 (ja) * 2003-12-26 2010-01-27 キヤノン株式会社 電子写真感光体、プロセスカートリッジおよび電子写真装置
JP4921982B2 (ja) 2004-01-26 2012-04-25 ノースウエスタン ユニバーシティ ペリレンｎ型半導体及び関連装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468444A (en) * 1983-04-21 1984-08-28 Eastman Kodak Company Pyrylium-sensitized leuco base photoconductive compositions and elements containing naphthalene bis-dicarboximide compounds

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN6012007033; Ｈ．　Ｅ．　Ｋａｔｚ，　ｅｔ　ａｌ．: 'Ｓｏｌｉｄ-Ｓｔａｔｅ　Ｓｔｒｕｃｔｕｒａｌ　ａｎｄ　Ｅｌｅｃｔｒｉｃａｌ　Ｃｈａｒａｃｔｅｒｉｚａｔｉｏｎ　ｏｆ　Ｎ-Ｂｅｎｚｙｌ　ａｎｄ　Ｎ-Ａｌｋｙｌ　Ｎａｐｈｔｈａｌｅｎｅ　１，４，５，８-Ｔ' ＣｈｅｍＰｈｙｓＣｈｅｍ Ｖｏｌ．　２, 20010309, Ｐａｇｅｓ　１６７-１７２, ＷＩＬＥＹ-ＶＣＨ　Ｖｅｒｌａｇ　ＧｍｂＨ *

Also Published As

Publication number Publication date
TW200644304A (en) 2006-12-16
DE602006014128D1 (de) 2010-06-17
US20090261323A1 (en) 2009-10-22
US7981719B2 (en) 2011-07-19
EP1872416B1 (en) 2010-05-05
US7579619B2 (en) 2009-08-25
US20060237712A1 (en) 2006-10-26
EP1872416A1 (en) 2008-01-02
WO2006115714A1 (en) 2006-11-02
KR20080003813A (ko) 2008-01-08

Similar Documents

Publication Publication Date Title
US7981719B2 (en) N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
JP5336385B2 (ja) 半導体材料としてのナフタレン系テトラカルボン酸ジイミド化合物
US7807994B2 (en) N-type semiconductor materials for thin film transistors
TWI423493B (zh) 用於薄膜電晶體之ｎ型半導體材料、製造薄膜半導體裝置之方法、電子裝置及積體電路
US7326956B2 (en) Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
TWI416721B (zh) 作為ｎ型半導體材料之經ｎ，ｎ’-二環烷基取代之以萘為主的四羧酸二醯亞胺
KR20070122203A (ko) 박막 트랜지스터용 중합체성 게이트 유전체
CN101849300B (zh) 用于薄膜晶体管的四羧酸二酰亚胺半导体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090302

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090302

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120214

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120511

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120518

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120813

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121016