JP2008535950A - 光画像形成可能な熱硬化性フッ素化レジスト - Google Patents

光画像形成可能な熱硬化性フッ素化レジスト Download PDF

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Publication number
JP2008535950A
JP2008535950A JP2008501061A JP2008501061A JP2008535950A JP 2008535950 A JP2008535950 A JP 2008535950A JP 2008501061 A JP2008501061 A JP 2008501061A JP 2008501061 A JP2008501061 A JP 2008501061A JP 2008535950 A JP2008535950 A JP 2008535950A
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JP
Japan
Prior art keywords
repeating unit
acid
functional group
perfluoro
polymer
Prior art date
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Abandoned
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JP2008501061A
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English (en)
Japanese (ja)
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JP2008535950A5 (enExample
Inventor
キム,ヤング・エイチ
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EIDP Inc
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EI Du Pont de Nemours and Co
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Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2008535950A publication Critical patent/JP2008535950A/ja
Publication of JP2008535950A5 publication Critical patent/JP2008535950A5/ja
Abandoned legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18Monomers containing fluorine
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18Monomers containing fluorine
    • C08F214/186Monomers containing fluorine with non-fluorinated comonomers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/16Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1804C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/32Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
    • C08F220/325Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Electroluminescent Light Sources (AREA)
  • Materials For Photolithography (AREA)
JP2008501061A 2005-03-11 2006-03-11 光画像形成可能な熱硬化性フッ素化レジスト Abandoned JP2008535950A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66066105P 2005-03-11 2005-03-11
PCT/US2006/009050 WO2006099380A2 (en) 2005-03-11 2006-03-11 Photoimageable, thermosettable fluorinated resists

Publications (2)

Publication Number Publication Date
JP2008535950A true JP2008535950A (ja) 2008-09-04
JP2008535950A5 JP2008535950A5 (enExample) 2009-04-23

Family

ID=36992357

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JP2008501061A Abandoned JP2008535950A (ja) 2005-03-11 2006-03-11 光画像形成可能な熱硬化性フッ素化レジスト

Country Status (4)

Country Link
US (1) US7459262B2 (enExample)
JP (1) JP2008535950A (enExample)
KR (1) KR20070119671A (enExample)
WO (1) WO2006099380A2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013186450A (ja) * 2012-03-12 2013-09-19 Fujifilm Corp ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置
JP2015069179A (ja) * 2013-09-30 2015-04-13 Jsr株式会社 感放射線性樹脂組成物、硬化膜、その形成方法、及び表示素子
JP2015072455A (ja) * 2013-09-04 2015-04-16 Jsr株式会社 感放射線性樹脂組成物、重合体組成物、硬化膜、その形成方法、及び電子デバイス
WO2015141525A1 (ja) * 2014-03-20 2015-09-24 住友ベークライト株式会社 感光性樹脂組成物、および電子装置
JP2021026053A (ja) * 2019-07-31 2021-02-22 日東電工株式会社 感光性組成物、デバイス及びデバイスの製造方法

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KR101439538B1 (ko) * 2007-08-14 2014-09-12 삼성전자주식회사 보호막 형성용 조성물 및 이에 의한 보호막을 포함한유기박막 트랜지스터
KR101084267B1 (ko) * 2009-02-26 2011-11-16 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
US8388852B2 (en) * 2010-07-30 2013-03-05 Apple Inc. Method for fabricating touch sensor panels
TW201415161A (zh) * 2012-09-28 2014-04-16 Fujifilm Corp 感光性樹脂組成物、使用其的硬化膜的製造方法、硬化膜、液晶顯示裝置及有機el顯示裝置
EP2904648B1 (en) * 2012-10-04 2016-09-21 Merck Patent GmbH Passivation layers for organic electronic devices
US10190015B2 (en) 2014-06-03 2019-01-29 The Chemours Company Fc, Llc Passivation layer comprising a photocrosslinked fluoropolymer

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US2928865A (en) 1957-03-25 1960-03-15 Du Pont Fluorinated tricyclononanes and tetracycloundecanes
US5229473A (en) 1989-07-07 1993-07-20 Daikin Industries Ltd. Fluorine-containing copolymer and method of preparing the same
US5401812A (en) * 1991-12-24 1995-03-28 Matsushita Electric Works, Ltd. Thermosetting polyimide composition, thermoset product thereof and manufacturing process thereof
US6232417B1 (en) * 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
JP3650985B2 (ja) * 1997-05-22 2005-05-25 Jsr株式会社 ネガ型感放射線性樹脂組成物およびパターン製造法
KR100634941B1 (ko) 1999-05-04 2006-10-17 이 아이 듀폰 디 네모아 앤드 캄파니 플루오르화 에폭시드의 제조 방법
AU2001296737A1 (en) 2000-10-12 2002-04-22 North Carolina State University Co2-processes photoresists, polymers, and photoactive compounds for microlithography
JP2004514952A (ja) * 2000-11-29 2004-05-20 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ポリマー中の保護基、フォトレジスト、およびマイクロリソグラフィー法
JP2002372601A (ja) * 2001-04-13 2002-12-26 Fuji Photo Film Co Ltd 反射防止フィルムおよび画像表示装置と含フッ素共重合体
JP3570394B2 (ja) * 2001-05-25 2004-09-29 ソニー株式会社 アクティブマトリクス型表示装置およびアクティブマトリクス型有機エレクトロルミネッセンス表示装置、並びにそれらの駆動方法
US6692326B2 (en) 2001-06-16 2004-02-17 Cld, Inc. Method of making organic electroluminescent display
WO2003006413A1 (en) * 2001-07-12 2003-01-23 Daikin Industries, Ltd. Process for production of fluorine-containing norbornene derivatives
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US6753096B2 (en) * 2001-11-27 2004-06-22 General Electric Company Environmentally-stable organic electroluminescent fibers
US6926572B2 (en) 2002-01-25 2005-08-09 Electronics And Telecommunications Research Institute Flat panel display device and method of forming passivation film in the flat panel display device
US6734625B2 (en) 2002-07-30 2004-05-11 Xerox Corporation Organic light emitting device (OLED) with multiple capping layers passivation region on an electrode
KR20050069979A (ko) * 2002-08-09 2005-07-05 이 아이 듀폰 디 네모아 앤드 캄파니 포토레지스트, 플루오르화 중합체 및 157 nm마이크로리소그래피법
US20050265685A1 (en) * 2002-08-13 2005-12-01 Daikin Industries, Ltd Optical material containing photocurable fluoropolymer and photocurable fluororesin composition

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013186450A (ja) * 2012-03-12 2013-09-19 Fujifilm Corp ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置
JP2015072455A (ja) * 2013-09-04 2015-04-16 Jsr株式会社 感放射線性樹脂組成物、重合体組成物、硬化膜、その形成方法、及び電子デバイス
JP2015069179A (ja) * 2013-09-30 2015-04-13 Jsr株式会社 感放射線性樹脂組成物、硬化膜、その形成方法、及び表示素子
WO2015141525A1 (ja) * 2014-03-20 2015-09-24 住友ベークライト株式会社 感光性樹脂組成物、および電子装置
JPWO2015141525A1 (ja) * 2014-03-20 2017-04-06 住友ベークライト株式会社 感光性樹脂組成物、および電子装置
JP2021026053A (ja) * 2019-07-31 2021-02-22 日東電工株式会社 感光性組成物、デバイス及びデバイスの製造方法
JP7395278B2 (ja) 2019-07-31 2023-12-11 日東電工株式会社 感光性組成物、デバイス及びデバイスの製造方法

Also Published As

Publication number Publication date
US20070092834A1 (en) 2007-04-26
US7459262B2 (en) 2008-12-02
WO2006099380A2 (en) 2006-09-21
KR20070119671A (ko) 2007-12-20
WO2006099380A3 (en) 2007-12-13

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