JP2008524661A - レンズ、レーザ装置およびレーザ装置の製造方法 - Google Patents
レンズ、レーザ装置およびレーザ装置の製造方法 Download PDFInfo
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- JP2008524661A JP2008524661A JP2007547161A JP2007547161A JP2008524661A JP 2008524661 A JP2008524661 A JP 2008524661A JP 2007547161 A JP2007547161 A JP 2007547161A JP 2007547161 A JP2007547161 A JP 2007547161A JP 2008524661 A JP2008524661 A JP 2008524661A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/02—Simple or compound lenses with non-spherical faces
- G02B3/04—Simple or compound lenses with non-spherical faces with continuous faces that are rotationally symmetrical but deviate from a true sphere, e.g. so called "aspheric" lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
- G02B7/028—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
- H01S5/02492—CuW heat spreaders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Lenses (AREA)
- Eyeglasses (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
図2は、本発明によるレーザ装置の第1の実施例の概略的な断面図を示し、
図3は、本発明によるレーザ装置の別の実施例の概略的な断面図を示す。
Claims (21)
- 平凸状の非球面レンズ(20)において、
少なくとも3.0の屈折率を有する材料を含有し、
凸状に湾曲した領域(21)の高さ(h)がレンズ(20)の厚さ(l)の最大で1/5であることを特徴とする、レンズ。 - 前記凸状に湾曲した領域(21)の高さ(h)は前記レンズの厚さ(l)の最大で1/8である、請求項1記載のレンズ。
- 前記凸状に湾曲した領域(21)の高さ(h)は35〜60μmである、請求項1または2記載のレンズ。
- 前記レンズの厚さ(l)は300〜500μmである、請求項1から3までのいずれか1項記載のレンズ。
- 前記材料は半導体材料を包含する、請求項1から4までのいずれか1項記載のレンズ。
- 前記材料はGaPを包含する、請求項5記載のレンズ。
- 前記凸状に湾曲した領域(21)の曲率半径(R)の値は少なくとも400μmである、請求項1から6までのいずれか1項記載のレンズ。
- 開口数は少なくとも0.7である、請求項1から7までのいずれか1項記載のレンズ。
- 少なくとも1つの放射入射面(23)および放射出射面(22)は反射防止層を有する、請求項1から8までのいずれか1項記載のレンズ。
- 前記反射防止層は材料、SiNO,TaO,AlOの内の少なくとも1つを含有する、請求項9記載のレンズ。
- レーザ装置において、
電磁放射(19)の形成に適した半導体チップ(1)を有し、該半導体チップ(1)には放射方向において、平坦な放射入射面(23)を備えた、請求項1から10までのいずれか1項記載の平凸レンズ(20)が対向して配置されていることを特徴とする、レーザ装置。 - 前記半導体チップ(1)の放射出力結合面(1a)と前記レンズの放射入射面(23)との間の距離(d)は最大で80μmである、請求項11記載のレーザ装置。
- 前記半導体チップ(1)はレーザダイオードチップ、レーザダイオードバーのうちのいずれかである、請求項11または12記載のレーザ装置。
- 前記半導体チップ(1)は、800〜950nmの波長領域にある電磁放射(19)の形成に適している、請求項11から13までのいずれか1項記載のレーザ装置。
- 前記レンズ(20)は接着剤を用いて導体フレーム(8)に固定されている、請求項11から14までのいずれか1項記載のレーザ装置。
- 前記半導体チップ(1)は硬質はんだ接合(5,7)により前記導体フレーム(8)に固定されている、請求項15記載のレーザ装置。
- 請求項11から16までのいずれか1項記載のレーザ装置の製造方法において、
吸引ピンセットを使用してレンズ(20)を半導体チップ(1)のビーム路内に配置することを特徴とする、レーザ装置の製造方法。 - 前記レンズは平凸レンズ(20)である、請求項17記載の方法。
- 前記レンズの厚さ(l)は最大で600μmである、請求項17または18記載の方法。
- 前記吸引ピンセットを前記レンズ(20)の平坦な面(24a)に接触させ、前記レンズ(20)を前記平坦な面(24a)とは反対側の平坦な面(24b)を用いて支持体に載置する、請求項18記載の方法。
- 前記レンズ(20)は対向する2つの平坦な面(24a,24b)を有し、該平坦な面(24a,24b)は前記レンズ(20)の光軸(25)の方向において少なくとも350μmの長さを有する、請求項20記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004061576.4 | 2004-12-21 | ||
DE102004061576 | 2004-12-21 | ||
DE102005006052A DE102005006052A1 (de) | 2004-12-21 | 2005-02-10 | Linse, Laseranordnung und Verfahren zur Herstellung einer Laseranordnung |
DE102005006052.8 | 2005-02-10 | ||
PCT/DE2005/002235 WO2006066543A1 (de) | 2004-12-21 | 2005-12-12 | Linse, laseranordnung und verfahren zur herstellung einer laseranordnung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008524661A true JP2008524661A (ja) | 2008-07-10 |
JP5001854B2 JP5001854B2 (ja) | 2012-08-15 |
Family
ID=36168473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007547161A Expired - Fee Related JP5001854B2 (ja) | 2004-12-21 | 2005-12-12 | レンズ、レーザ装置およびレーザ装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8072692B2 (ja) |
EP (1) | EP1828828B1 (ja) |
JP (1) | JP5001854B2 (ja) |
DE (2) | DE102005006052A1 (ja) |
TW (1) | TWI295383B (ja) |
WO (1) | WO2006066543A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012120613A1 (ja) * | 2011-03-07 | 2012-09-13 | パイオニア株式会社 | 発光状況測定装置 |
JP2017224849A (ja) * | 2013-03-28 | 2017-12-21 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | レーザ素子およびその製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11431146B2 (en) * | 2015-03-27 | 2022-08-30 | Jabil Inc. | Chip on submount module |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01154101A (ja) * | 1987-11-06 | 1989-06-16 | Siemens Ag | 球面平凸レンズ |
JPH02267511A (ja) * | 1989-04-10 | 1990-11-01 | Nikon Corp | ズーム光学系 |
JP2000131501A (ja) * | 1998-10-23 | 2000-05-12 | Sony Corp | 光学レンズ、集光レンズ、光学ピックアップ装置および光記録再生装置 |
JP2001517810A (ja) * | 1997-09-22 | 2001-10-09 | インフィネオン テクノロジース アクチエンゲゼルシャフト | レーザビームを光導波体へ入力結合するための光学システムおよびその製造方法 |
JP2001305308A (ja) * | 2000-04-21 | 2001-10-31 | Minolta Co Ltd | 微小光学素子及びその保持方法 |
JP2002196233A (ja) * | 2000-12-26 | 2002-07-12 | Nikon Corp | 赤外光学系及びこれを備えた赤外光学装置 |
JP2004029474A (ja) * | 2002-06-26 | 2004-01-29 | Nikon Corp | 結像光学系 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2712521A1 (de) * | 1977-03-22 | 1978-09-28 | Wacker Chemitronic | Verfahren zum aufkitten von scheiben |
US4185891A (en) * | 1977-11-30 | 1980-01-29 | Grumman Aerospace Corporation | Laser diode collimation optics |
US5026145A (en) * | 1987-09-24 | 1991-06-25 | Asahi Kogaku Kogyo Kabushiki Kaisha | Exposure apparatus |
NL8901821A (nl) * | 1988-08-25 | 1990-03-16 | Philips Nv | Reflectiearm bollensconnectordeel. |
US5422475A (en) * | 1989-08-11 | 1995-06-06 | Santa Barabara Research Center | Method and apparatus for concentrating optical flux in a focal plane array |
EP0706070A3 (de) * | 1994-10-04 | 1997-04-02 | Siemens Ag | Verfahren zum Trockenätzen eines Halbleitersubstrats |
DE19527026C2 (de) | 1995-07-24 | 1997-12-18 | Siemens Ag | Optoelektronischer Wandler und Herstellverfahren |
US5757830A (en) * | 1996-02-07 | 1998-05-26 | Massachusetts Institute Of Technology | Compact micro-optical edge-emitting semiconductor laser assembly |
US5963577A (en) | 1997-04-11 | 1999-10-05 | Blue Sky Research | Multiple element laser diode assembly incorporating a cylindrical microlens |
US5940564A (en) * | 1997-08-05 | 1999-08-17 | Picolight, Inc. | Device for coupling a light source or receiver to an optical waveguide |
US6043940A (en) * | 1997-11-14 | 2000-03-28 | Kyocera Corporation | Optical system for optical recording |
JP2000147392A (ja) | 1998-11-18 | 2000-05-26 | Nippon Sheet Glass Co Ltd | 内視鏡用対物レンズ |
DE10135872A1 (de) * | 2001-07-24 | 2003-02-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Linse |
DE10142010A1 (de) | 2001-08-28 | 2003-04-03 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Linse aus GaP-basiertem Halbleitermaterial |
JP3737769B2 (ja) | 2002-03-28 | 2006-01-25 | 株式会社東芝 | 半導体レーザ装置 |
US6646782B1 (en) * | 2002-11-21 | 2003-11-11 | The United States Of America As Represented By The Secretary Of The Navy | Solid-state surface plasmon light valve and tunable filter |
US6912090B2 (en) | 2003-03-18 | 2005-06-28 | Lucent Technologies Inc. | Adjustable compound microlens apparatus with MEMS controller |
DE10354780A1 (de) * | 2003-11-21 | 2005-06-30 | Schott Ag | Refraktiv-diffraktive Hybridlinse, insbesondere zur Strahlformung von Hochleistungsdiodenlasern |
JP2008089926A (ja) * | 2006-09-29 | 2008-04-17 | Oki Electric Ind Co Ltd | 微小光学素子、その製造方法及びフォトマスク |
-
2005
- 2005-02-10 DE DE102005006052A patent/DE102005006052A1/de not_active Ceased
- 2005-12-12 WO PCT/DE2005/002235 patent/WO2006066543A1/de active Application Filing
- 2005-12-12 DE DE502005011057T patent/DE502005011057D1/de active Active
- 2005-12-12 US US11/793,259 patent/US8072692B2/en not_active Expired - Fee Related
- 2005-12-12 EP EP05849666A patent/EP1828828B1/de not_active Expired - Fee Related
- 2005-12-12 JP JP2007547161A patent/JP5001854B2/ja not_active Expired - Fee Related
- 2005-12-19 TW TW094145070A patent/TWI295383B/zh not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01154101A (ja) * | 1987-11-06 | 1989-06-16 | Siemens Ag | 球面平凸レンズ |
JPH02267511A (ja) * | 1989-04-10 | 1990-11-01 | Nikon Corp | ズーム光学系 |
JP2001517810A (ja) * | 1997-09-22 | 2001-10-09 | インフィネオン テクノロジース アクチエンゲゼルシャフト | レーザビームを光導波体へ入力結合するための光学システムおよびその製造方法 |
JP2000131501A (ja) * | 1998-10-23 | 2000-05-12 | Sony Corp | 光学レンズ、集光レンズ、光学ピックアップ装置および光記録再生装置 |
JP2001305308A (ja) * | 2000-04-21 | 2001-10-31 | Minolta Co Ltd | 微小光学素子及びその保持方法 |
JP2002196233A (ja) * | 2000-12-26 | 2002-07-12 | Nikon Corp | 赤外光学系及びこれを備えた赤外光学装置 |
JP2004029474A (ja) * | 2002-06-26 | 2004-01-29 | Nikon Corp | 結像光学系 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012120613A1 (ja) * | 2011-03-07 | 2012-09-13 | パイオニア株式会社 | 発光状況測定装置 |
JP5247892B2 (ja) * | 2011-03-07 | 2013-07-24 | パイオニア株式会社 | 発光状況測定装置 |
JP2017224849A (ja) * | 2013-03-28 | 2017-12-21 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | レーザ素子およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200628847A (en) | 2006-08-16 |
EP1828828B1 (de) | 2011-03-02 |
JP5001854B2 (ja) | 2012-08-15 |
US8072692B2 (en) | 2011-12-06 |
TWI295383B (en) | 2008-04-01 |
WO2006066543A1 (de) | 2006-06-29 |
EP1828828A1 (de) | 2007-09-05 |
DE102005006052A1 (de) | 2006-07-06 |
DE502005011057D1 (de) | 2011-04-14 |
US20110102914A1 (en) | 2011-05-05 |
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