JP2008520091A5 - - Google Patents

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Publication number
JP2008520091A5
JP2008520091A5 JP2007540474A JP2007540474A JP2008520091A5 JP 2008520091 A5 JP2008520091 A5 JP 2008520091A5 JP 2007540474 A JP2007540474 A JP 2007540474A JP 2007540474 A JP2007540474 A JP 2007540474A JP 2008520091 A5 JP2008520091 A5 JP 2008520091A5
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JP
Japan
Prior art keywords
loss
loss element
matching network
lost
power
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JP2007540474A
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English (en)
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JP2008520091A (ja
JP5086092B2 (ja
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Priority claimed from PCT/CH2005/000669 external-priority patent/WO2006050632A2/en
Publication of JP2008520091A publication Critical patent/JP2008520091A/ja
Publication of JP2008520091A5 publication Critical patent/JP2008520091A5/ja
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Publication of JP5086092B2 publication Critical patent/JP5086092B2/ja
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Description

ここで、PFは整合回路網14の出力における電力であり、損失素子RMおよび給電素子26における損失素子 F およびプラズマを通って損失される。整合回路網14における
損失素子RMおよび給電素子26における損失素子RFを通って失われる電力は、以下の式によって規定される。
JP2007540474A 2004-11-12 2005-11-11 大面積基板に好適な容量結合型rfプラズマ反応器のインピーダンス整合 Expired - Fee Related JP5086092B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62778404P 2004-11-12 2004-11-12
US60/627,784 2004-11-12
PCT/CH2005/000669 WO2006050632A2 (en) 2004-11-12 2005-11-11 Impedance matching of a capacitively coupled rf plasma reactor suitable for large area substrates

Publications (3)

Publication Number Publication Date
JP2008520091A JP2008520091A (ja) 2008-06-12
JP2008520091A5 true JP2008520091A5 (ja) 2008-11-27
JP5086092B2 JP5086092B2 (ja) 2012-11-28

Family

ID=36218432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007540474A Expired - Fee Related JP5086092B2 (ja) 2004-11-12 2005-11-11 大面積基板に好適な容量結合型rfプラズマ反応器のインピーダンス整合

Country Status (10)

Country Link
US (1) US20070252529A1 (ja)
EP (1) EP1812949B1 (ja)
JP (1) JP5086092B2 (ja)
KR (1) KR101107393B1 (ja)
CN (1) CN101057310B (ja)
AT (1) ATE473513T1 (ja)
AU (1) AU2005304253B8 (ja)
DE (1) DE602005022221D1 (ja)
TW (1) TW200625396A (ja)
WO (1) WO2006050632A2 (ja)

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TWI440405B (zh) * 2007-10-22 2014-06-01 New Power Plasma Co Ltd 電容式耦合電漿反應器
KR100979186B1 (ko) 2007-10-22 2010-08-31 다이나믹솔라디자인 주식회사 용량 결합 플라즈마 반응기
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US8578879B2 (en) * 2009-07-29 2013-11-12 Applied Materials, Inc. Apparatus for VHF impedance match tuning
SG178288A1 (en) * 2009-08-31 2012-03-29 Lam Res Corp A multi-peripheral ring arrangement for performing plasma confinement
CN102487572B (zh) * 2010-12-02 2015-06-24 理想能源设备(上海)有限公司 等离子加工装置
TWI455172B (zh) 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
SI23611A (sl) 2011-01-20 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda in naprava za vzbujanje visokofrekvenčne plinske plazme
CN102686004B (zh) * 2011-03-17 2015-05-13 中微半导体设备(上海)有限公司 用于等离子体发生器的可控制谐波的射频系统
US8932429B2 (en) * 2012-02-23 2015-01-13 Lam Research Corporation Electronic knob for tuning radial etch non-uniformity at VHF frequencies
CN102695353B (zh) * 2012-05-31 2015-08-12 浙江工商大学 利用高电压产生气体等离子放电基本单元及反应器
CN104685982B (zh) 2012-08-27 2019-07-30 伟巴斯特充电系统公司 便携式电动交通工具供电设备
CN103794895B (zh) * 2012-10-30 2016-02-24 新奥光伏能源有限公司 一种射频电源接入器
CN103388134B (zh) * 2013-07-22 2016-05-18 北京工业大学 容性耦合等离子体增强化学气相沉积制备厚度均匀薄膜的方法
CN103454489B (zh) * 2013-09-12 2016-09-21 清华大学 匹配网络的损耗功率标定方法及系统
US20180175819A1 (en) * 2016-12-16 2018-06-21 Lam Research Corporation Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor
US10536130B2 (en) 2017-08-29 2020-01-14 Mks Instruments, Inc. Balancing RF circuit and control for a cross-coupled SIMO distribution network
US11107661B2 (en) * 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology

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US3471396A (en) * 1967-04-10 1969-10-07 Ibm R.f. cathodic sputtering apparatus having an electrically conductive housing
DE2939167A1 (de) * 1979-08-21 1981-04-02 Coulter Systems Corp., Bedford, Mass. Vorrichtung und verfahren zur leistungszufuehrung an eine von dem entladungsplasma einer zerstaeubungsvorrichtung gebildeten last
JPH0354825A (ja) * 1989-07-21 1991-03-08 Tokyo Electron Ltd プラズマ処理装置
JPH0685542A (ja) * 1992-09-03 1994-03-25 Hitachi Metals Ltd 周波数可変マイクロ波発振器
US5981899A (en) * 1997-01-17 1999-11-09 Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
JP2961103B1 (ja) * 1998-04-28 1999-10-12 三菱重工業株式会社 プラズマ化学蒸着装置
US6395095B1 (en) * 1999-06-15 2002-05-28 Tokyo Electron Limited Process apparatus and method for improved plasma processing of a substrate
JP2002316040A (ja) * 2001-04-24 2002-10-29 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
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TW200300650A (en) * 2001-11-27 2003-06-01 Alps Electric Co Ltd Plasma processing apparatus
JP4216054B2 (ja) * 2001-11-27 2009-01-28 アルプス電気株式会社 プラズマ処理装置及びその運転方法
JP4370789B2 (ja) * 2002-07-12 2009-11-25 東京エレクトロン株式会社 プラズマ処理装置及び可変インピーダンス手段の校正方法

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