JP2008311514A - Grinding method of semiconductor wafer, and sheet for surface protection - Google Patents

Grinding method of semiconductor wafer, and sheet for surface protection Download PDF

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JP2008311514A
JP2008311514A JP2007159122A JP2007159122A JP2008311514A JP 2008311514 A JP2008311514 A JP 2008311514A JP 2007159122 A JP2007159122 A JP 2007159122A JP 2007159122 A JP2007159122 A JP 2007159122A JP 2008311514 A JP2008311514 A JP 2008311514A
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sheet
semiconductor wafer
double
sensitive adhesive
laminate
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Arata Kubota
新 久保田
Yasushi Fujimoto
泰史 藤本
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Lintec Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a reverse surface grinding method of a semiconductor wafer which is flexibly adaptive to various semiconductor wafers differing in bump height. <P>SOLUTION: A plurality of both-sided adhesive sheets 2 each having an opening portion 3 corresponding to a portion where bumps 5 are formed are stacked and stuck to a desired height in accordance with a circuit surface outer peripheral portion of the semiconductor wafer 4 to provide the both-sided adhesive sheet stack 20 at the circuit surface outer peripheral portion of the semiconductor wafer 4. Then a base material sheet 1 is stuck so as to cover the opening portion of the both-sided adhesive sheet stack, the side of the base sheet 1 is mounted on a fixed table, and the reverse surface side of the semiconductor wafer is ground. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は半導体ウエハの研削方法に関し、特に、回路面上に高さの高いバンプが高密度で配列された半導体ウエハの裏面研削工程に好適に使用される半導体ウエハの研削方法に関する。また、本発明の該研削方法に好適に用いられる表面保護用シートに関する。   The present invention relates to a method for grinding a semiconductor wafer, and more particularly to a method for grinding a semiconductor wafer that is preferably used in a backside grinding process of a semiconductor wafer in which bumps having high height are arranged at high density on a circuit surface. Moreover, it is related with the sheet | seat for surface protection used suitably for this grinding method of this invention.

半導体装置の高密度実装化に伴い、半導体チップと基板の接合にはハンダ等からなるバンプが用いられ、直接接合する場合は直径１００μｍ程度のボール形状のものが用いられることが多い。このような高バンプが回路面に形成されたウエハの裏面を研削すると、バンプの段差による圧力差が裏面に直接影響し、表面保護する粘着シートのクッション性では圧力差を抑えきれずに研削工程中に破損したり、ディンプル（裏面に生成する窪み）となって完成したデバイスの信頼性を欠けさせる要因となっていた。このような場合、従来ではウエハの破損を起こさないように仕上げの厚さを比較的厚めにするか、バンプを配列する密度が疎となるような設計で回避していた。   As semiconductor devices are being mounted at higher density, bumps made of solder or the like are used for bonding the semiconductor chip and the substrate, and in the case of direct bonding, a ball shape having a diameter of about 100 μm is often used. When the back side of a wafer with such high bumps formed on the circuit surface is ground, the pressure difference due to bump bumps directly affects the back side, and the cushioning property of the adhesive sheet that protects the surface can not suppress the pressure difference and grinding process Damage to the inside or dimples (dimples formed on the back surface) caused a lack of reliability in the completed device. In such a case, conventionally, the thickness of the finish is made relatively thick so as not to damage the wafer, or the design in which the density of arranging the bumps is sparse has been avoided.

しかし、近年においては高さの高いバンプを高密度に配列することが要請されるデバイスが多くなっている。このようなデバイスに対して、図１１に示すような通常の表面保護用の粘着シートＡを用いると、バンプが邪魔をしてウエハの端部に粘着剤層が貼付できなくなる。この結果、裏面研削時に熱や切削屑の除去を目的として噴霧された洗浄水の一部が、回路面側に浸入し、回路面を汚損してしまうことがあった。   However, in recent years, an increasing number of devices are required to arrange high bumps at high density. If a normal surface protecting adhesive sheet A as shown in FIG. 11 is used for such a device, the bumps obstruct the adhesive layer from being stuck to the edge of the wafer. As a result, part of the cleaning water sprayed for the purpose of removing heat and cutting waste during back grinding may enter the circuit surface side and contaminate the circuit surface.

このため、粘着剤層の厚みを厚くしさらに粘着剤の流動性を高めることにより、粘着剤層とウエハの端部を密着させるようにして対処しているが、バンプの根本部分に粘着剤が回り込み易くなっているため、粘着シートの剥離操作によってバンプの根本部分に付着した粘着剤が層内破壊を起こし、その一部が残着することがある。これはエネルギー線硬化型粘着剤を用いた粘着シートを用いた場合であっても起こりうる問題であった。回路面に残着した粘着剤は溶剤洗浄等により除去しなければ、デバイスの異物として残留し完成したデバイスの信頼性を貶める。   For this reason, the adhesive layer and the end of the wafer are brought into close contact with each other by increasing the thickness of the adhesive layer and increasing the fluidity of the adhesive. Since it is easy to wrap around, the pressure-sensitive adhesive attached to the base portion of the bump due to the peeling operation of the pressure-sensitive adhesive sheet may cause destruction in the layer, and a part thereof may remain. This is a problem that may occur even when an adhesive sheet using an energy ray curable adhesive is used. If the adhesive remaining on the circuit surface is not removed by solvent washing or the like, it remains as a foreign substance of the device, and the reliability of the completed device is given up.

このような問題を解消するため、特許文献１には、本願明細書に添付の図１２に示すように、半導体ウエハの裏面研削を行う際に用いる表面保護用シート１１であって、基材シート１の片面に、貼付する半導体ウエハ４の外径よりも小径の粘着剤層が形成されていない開口部と、その外周に形成された粘着剤層２（両面粘着シート等）が形成されている部分とが設けられている表面保護用シートが開示されている。この表面保護用シート１１は、基材シート１の片面にリング状に打ち抜かれた両面粘着シート２が形成されてなる構造であり、バンプ５に当接する部分に粘着剤が設けられていないためバンプ５の根本部分に粘着剤が付着することがなく、それによるデバイスの信頼性不足は起こりえない。また、通常はウエハ４の端部を両面粘着シート２の粘着剤層により密着固定できるので、回路面への洗浄水の浸入が防止され、ウエハの汚損を低減できる。
特開2005-123382号公報 In order to solve such a problem, as shown in FIG. 12 attached to the present specification, Patent Document 1 discloses a surface protection sheet 11 used when grinding a back surface of a semiconductor wafer. 1 is formed with an opening in which an adhesive layer having a diameter smaller than the outer diameter of the semiconductor wafer 4 to be attached is formed, and an adhesive layer 2 (double-sided adhesive sheet or the like) formed on the outer periphery thereof. A surface protection sheet provided with a portion is disclosed. This surface protecting sheet 11 has a structure in which a double-sided pressure-sensitive adhesive sheet 2 punched in a ring shape is formed on one surface of the base material sheet 1, and no adhesive is provided at the portion in contact with the bump 5. The adhesive does not adhere to the root portion of 5, so that the reliability of the device cannot be insufficient. Moreover, since the edge part of the wafer 4 can be normally closely fixed by the adhesive layer of the double-sided pressure-sensitive adhesive sheet 2, the infiltration of cleaning water into the circuit surface is prevented, and the contamination of the wafer can be reduced.
JP 2005-123382 A

しかしながら、デバイス設計が多様化しつつあり、これに伴い半導体ウエハ表面に形成されるバンプの高さも要求特性に応じて様々に変更される。たとえば、回路基板との導通を確実にするために、バンプ高さが３００μｍを超える半導体ウエハもある。上記特許文献１に記載の表面保護シートにおいては、バンプの高さに応じて粘着剤層２の厚みが決定されるが、バンプの高さが異なる多種の半導体ウエハに対応するために、多種の表面保護用シートを準備する必要があった。   However, device design is becoming diversified, and accordingly, the height of bumps formed on the surface of the semiconductor wafer is changed variously according to required characteristics. For example, some semiconductor wafers have bump heights greater than 300 μm to ensure conduction with the circuit board. In the surface protection sheet described in Patent Document 1, the thickness of the pressure-sensitive adhesive layer 2 is determined according to the height of the bumps, but in order to cope with various semiconductor wafers having different bump heights, It was necessary to prepare a surface protection sheet.

また、上記のような表面保護用シート１１は、図１３に示すように、長尺の剥離シートの片面に、リング状に打ち抜かれた両面粘着シートと円形の基材シートとからなる表面保護用シート１１が長手方向に所定間隔で仮着、支持されてなる長尺積層シートの形態で供給されることが多い。この長尺積層シートは、運搬、保管時の利便性から、ロール状に巻き取られた巻収体とされる。あるいは、図示はしないが、単葉の剥離シートの片面に、表面保護用シートが仮着、支持されてなる積層シートを複数枚積み重ねて運搬、保管することもある。   Further, as shown in FIG. 13, the surface protection sheet 11 as described above is for surface protection comprising a double-sided pressure-sensitive adhesive sheet punched into a ring shape and a circular base sheet on one side of a long release sheet. In many cases, the sheet 11 is supplied in the form of a long laminated sheet that is temporarily attached and supported at predetermined intervals in the longitudinal direction. This long laminated sheet is a rolled up body wound up in a roll shape for convenience during transportation and storage. Alternatively, although not shown, a plurality of laminated sheets each having a surface protective sheet temporarily attached and supported on one surface of a single-leaf release sheet may be stacked and transported and stored.

基材シート１とリング状両面粘着シート２とからなる表面保護用シート（図１２参照）は、リング状両面粘着シート２の部分の厚みが厚く、一方粘着シートが貼付されていない部分は基材シート１のみの厚みとなり、巻収体とした場合や積み重ねた場合には、厚みの差による凹凸が発生する。この状態で表面保護用シート１１の運搬、保管を行うと、厚みの厚い部分、すなわちリング状両面粘着シート２に過剰の圧力が加わり、リング状両面粘着シートが変形し、シワや折り目が入ることがある。   The surface protection sheet (see FIG. 12) composed of the base sheet 1 and the ring-shaped double-sided pressure-sensitive adhesive sheet 2 has a thick portion of the ring-shaped double-sided pressure-sensitive adhesive sheet 2, while the part where the pressure-sensitive adhesive sheet is not attached is a base material. When the thickness is only the sheet 1 and the rolls are stacked or stacked, unevenness due to the difference in thickness occurs. When the surface protecting sheet 11 is transported and stored in this state, excessive pressure is applied to the thick part, that is, the ring-shaped double-sided pressure-sensitive adhesive sheet 2, and the ring-shaped double-sided pressure-sensitive adhesive sheet is deformed and wrinkles and folds are formed. There is.

この結果、上記表面保護用シート１１を半導体ウエハ４に貼付した際に、リング状両面粘着シート２に発生したシワや折り目のためにウエハ４と両面粘着シート２との間に空隙が生じる。この状態で半導体ウエハの裏面研削を行うと、ウエハ４と両面粘着シート２との間の空隙を通して、洗浄水の一部が、回路面側に浸入し、回路面を汚損してしまうことがあった。   As a result, a gap is generated between the wafer 4 and the double-sided pressure-sensitive adhesive sheet 2 due to wrinkles or creases generated in the ring-shaped double-sided pressure-sensitive adhesive sheet 2 when the surface protection sheet 11 is attached to the semiconductor wafer 4. If the back surface of the semiconductor wafer is ground in this state, a part of the cleaning water may enter the circuit surface side through the gap between the wafer 4 and the double-sided pressure-sensitive adhesive sheet 2, and the circuit surface may be soiled. It was.

本発明は、上記のような従来技術に鑑みてなされたものであって、バンプ高さの異なる種々の半導体ウエハに対しても柔軟に対応することができる半導体ウエハの裏面研削方法を提供することを目的としている。また、表面保護用シートの製造と裏面研削とを連続して行いうる方法を提供することで、表面保護用シートを巻き取って巻収体としたり、あるいは多数積み重ねて運搬、保管する過程を省略し、粘着剤層（両面粘着シート）の変形を防止し、表面保護用シートの使用時における回路面への洗浄水の浸入を防ぐことを目的としている。   The present invention has been made in view of the prior art as described above, and provides a semiconductor wafer back surface grinding method that can flexibly cope with various semiconductor wafers having different bump heights. It is an object. In addition, by providing a method that allows continuous production of the surface protection sheet and backside grinding, the process of winding up the surface protection sheet to form a roll, or stacking, transporting, and storing a large number of sheets can be omitted. The purpose of the present invention is to prevent deformation of the pressure-sensitive adhesive layer (double-sided pressure-sensitive adhesive sheet) and prevent the ingress of cleaning water into the circuit surface when the surface protection sheet is used.

このような課題の解決を目的とした本発明の要旨は以下のとおりである。   The gist of the present invention aimed at solving such problems is as follows.

（１）バンプが形成された回路表面を有する半導体ウエハに、
バンプが形成されている部分に対応する開口部を有する両面粘着シートを、当該半導体ウエハの回路表面外周部分に合わせて、所望の高さになるまで複数枚積み重ねて貼着し、半導体ウエハの回路表面外周部分に両面粘着シート積層体を設け、
両面粘着シート積層体の開口部を塞ぐように基材シートを貼付し、
基材シート側を固定台に戴置し、半導体ウエハの裏面側を研削する半導体ウエハの研削方法。 (1) To a semiconductor wafer having a circuit surface on which bumps are formed,
A plurality of double-sided adhesive sheets having openings corresponding to the portions where the bumps are formed are stacked and pasted to a desired height in accordance with the outer peripheral portion of the circuit surface of the semiconductor wafer. Provide a double-sided adhesive sheet laminate on the outer periphery of the surface,
Paste the base sheet so as to close the opening of the double-sided PSA sheet laminate,
A semiconductor wafer grinding method in which the base sheet side is placed on a fixed base and the back side of the semiconductor wafer is ground.

（２）基材シートの片面に、
バンプが形成された回路表面を有する半導体ウエハのバンプが形成されている部分に対応する開口部を有する両面粘着シートを、所望の高さになるまで複数枚積み重ねて貼着し、基材シート表面に両面粘着シート積層体を設け、
両面粘着シート積層体の開口部が、当該半導体ウエハのバンプが形成されている部分に対応するように位置合わせし、両面粘着シート積層体を当該半導体ウエハの回路表面外周部分に合わせて貼付し、
基材シート側を固定台に戴置し、半導体ウエハの裏面側を研削する半導体ウエハの研削方法。 (2) On one side of the base sheet,
A plurality of double-sided pressure-sensitive adhesive sheets having openings corresponding to the bump-formed portions of the semiconductor wafer having the circuit surface on which the bumps are formed are stacked and pasted until the desired height is reached, and the base sheet surface Provided with a double-sided PSA sheet laminate,
The opening of the double-sided pressure-sensitive adhesive sheet laminate is aligned so as to correspond to the part where the bumps of the semiconductor wafer are formed, and the double-sided pressure-sensitive adhesive sheet laminate is attached to the circuit surface outer peripheral part of the semiconductor wafer,
A semiconductor wafer grinding method in which the base sheet side is placed on a fixed base and the back side of the semiconductor wafer is ground.

（３）剥離シートの片面に、両面粘着シートを所望の高さになるまで複数枚積み重ねて貼着し、
該両面粘着シート積層体を、バンプが形成された回路表面を有する半導体ウエハのバンプが形成されている部分に対応する開口部を形成するように打ち抜き、剥離シート上に両面粘着シート積層体を設け、
打ち抜かれた両面粘着シート積層体の開口部が、当該半導体ウエハのバンプが形成されている部分に対応するように位置合わせし、両面粘着シート積層体を当該半導体ウエハの回路表面外周部分に合わせて貼付し、
剥離シートを除去し、露出した両面粘着シート積層体の開口部を塞ぐように基材シートを貼付し、
基材シート側を固定台に戴置し、半導体ウエハの裏面側を研削する半導体ウエハの研削方法。 (3) A plurality of double-sided pressure-sensitive adhesive sheets are stacked and stuck on one side of the release sheet until the desired height is reached,
The double-sided PSA sheet laminate is punched out so as to form an opening corresponding to the bump-formed portion of the semiconductor wafer having the circuit surface on which the bumps are formed, and the double-sided PSA sheet laminate is provided on the release sheet. ,
Align the opening of the punched double-sided pressure-sensitive adhesive laminate so that it corresponds to the portion of the semiconductor wafer where the bumps are formed, and align the double-sided pressure-sensitive adhesive laminate with the outer peripheral portion of the circuit surface of the semiconductor wafer. Affix,
Remove the release sheet and paste the base sheet so as to close the exposed opening of the double-sided PSA sheet laminate,
A semiconductor wafer grinding method in which the base sheet side is placed on a fixed base and the back side of the semiconductor wafer is ground.

（４）剥離シートの片面に、両面粘着シートを所望の高さになるまで複数枚積み重ねて貼着し、
該両面粘着シート積層体を、バンプが形成された回路表面を有する半導体ウエハのバンプが形成されている部分に対応する開口部を形成するように打ち抜き、剥離シート上に両面粘着シート積層体を設け、
打ち抜かれた両面粘着シート積層体を基材シートに転写し、
打ち抜かれた両面粘着シート積層体の開口部が、当該半導体ウエハのバンプが形成されている部分に対応するように位置合わせし、両面粘着シート積層体を当該半導体ウエハの回路表面外周部分に合わせて貼付し、
基材シート側を固定台に戴置し、半導体ウエハの裏面側を研削する半導体ウエハの研削方法。 (4) Stack a plurality of double-sided PSA sheets on one side of the release sheet until the desired height is reached,
The double-sided PSA sheet laminate is punched out to form openings corresponding to the bump-formed portions of the semiconductor wafer having the circuit surface on which the bumps are formed, and the double-sided PSA sheet laminate is provided on the release sheet. ,
Transfer the punched double-sided adhesive sheet laminate to the base material sheet,
Align the opening of the punched double-sided pressure-sensitive adhesive laminate so that it corresponds to the portion of the semiconductor wafer where the bumps are formed, and align the double-sided pressure-sensitive adhesive laminate with the outer peripheral portion of the circuit surface of the semiconductor wafer. Affix,
A semiconductor wafer grinding method in which the base sheet side is placed on a fixed base and the back side of the semiconductor wafer is ground.

（５）基材シート側を固定台に戴置するに先立ち、基材シートおよび両面粘着シート積層体の外周部を半導体ウエハの外径に合わせて切断除去する工程をさらに含む（１）〜（４）の何れかに記載の半導体ウエハの研削方法。 (5) Prior to placing the base sheet side on the fixed base, the method further includes a step of cutting and removing the outer periphery of the base sheet and the double-sided pressure-sensitive adhesive laminate in accordance with the outer diameter of the semiconductor wafer (1) to ( 4) The semiconductor wafer grinding method according to any one of 4).

（６）半導体ウエハの裏面研削を行う際に用いる表面保護用シートであって、
基材シートの片面に、貼付する半導体ウエハの外径よりも小径の粘着剤層が形成されていない開口部と、該開口部を囲繞する粘着剤層とを有し、
前記粘着剤層が複数の両面粘着シートの積層体であることを特徴とする表面保護用シート。 (6) A surface protection sheet used when grinding the back surface of a semiconductor wafer,
On one side of the base sheet, an opening in which an adhesive layer having a diameter smaller than the outer diameter of the semiconductor wafer to be attached is formed, and an adhesive layer surrounding the opening,
The sheet for surface protection, wherein the pressure-sensitive adhesive layer is a laminate of a plurality of double-sided pressure-sensitive adhesive sheets.

本発明においては、裏面研削される半導体ウエハに形成されたバンプの高さに応じて、所望の高さまで両面粘着シートを積み重ねるため、バンプ高さの異なる種々の半導体ウエハに対しても柔軟に対応することができる。また、表面保護用シートの製造を裏面研削の前工程として実施するため、表面保護用シートを巻き取って巻収体としたり、あるいは積み重ねて運搬、保管する必要がないため、粘着剤層（両面粘着シート）の変形は起こらず、表面保護用シートの使用時における回路面への洗浄水の浸入を防止できる。   In the present invention, the double-sided adhesive sheets are stacked to the desired height according to the height of the bumps formed on the semiconductor wafer to be back-ground, so it can be flexibly adapted to various semiconductor wafers with different bump heights. can do. In addition, since the production of the surface protection sheet is carried out as a pre-process for backside grinding, it is not necessary to wind up the surface protection sheet to form a roll, or to stack, transport and store it. The adhesive sheet is not deformed, and it is possible to prevent the cleaning water from entering the circuit surface when the surface protection sheet is used.

以下、本発明について図面を参照しながら、さらに具体的に説明する。   Hereinafter, the present invention will be described more specifically with reference to the drawings.

本発明に係る半導体ウエハの研削方法は、図１に示すように、回路表面に多数のバンプ５が形成された半導体ウエハ４の裏面研削方法に関する。裏面研削時には、バンプ５が形成されている部分に対応する開口部３を有する両面粘着シート２を複数積層してなる両面粘着シート積層体２０によりウエハ外郭部を固定している。この両面粘着シートは、図２に示すように、その中央部に開口部３がされてなり、該開口部３は、半導体ウエハ４のバンプ存在領域に対応して形成されている。そして、該両面粘着シート積層体２０上には、バンプ５が収容された開口部３を塞ぐように基材シート１を貼付されてなる。   The method for grinding a semiconductor wafer according to the present invention relates to a method for grinding a back surface of a semiconductor wafer 4 having a large number of bumps 5 formed on a circuit surface as shown in FIG. At the time of back grinding, the outer portion of the wafer is fixed by a double-sided PSA sheet laminate 20 formed by laminating a plurality of double-sided PSA sheets 2 having openings 3 corresponding to the portions where the bumps 5 are formed. As shown in FIG. 2, the double-sided pressure-sensitive adhesive sheet has an opening 3 at the center thereof, and the opening 3 is formed corresponding to a bump existing area of the semiconductor wafer 4. And the base material sheet 1 is affixed on this double-sided adhesive sheet laminated body 20 so that the opening part 3 in which the bump 5 was accommodated may be plugged up.

このような状態で半導体ウエハ４を保護して、グラインダー６を用いてウエハの裏面研削を行うと、ウエハ４の外郭部には両面粘着シート積層体２０が全周を囲って確実に接着しているため、研削加工時の洗浄水等の浸入は起こらずウエハの回路面を汚染することがない。また、ウエハ回路面に対してはバンプの頂点が適度な圧力で基材シートに接しているため、研削加工時に表面保護用シートの剥がれや位置ずれ等が起きにくくなる。さらに、裏面研削される半導体ウエハに形成されたバンプの高さに応じて、所望の高さまで両面粘着シートを積み重ねて上記保護構造を形成するため、バンプ高さの異なる種々の半導体ウエハに対しても柔軟に対応することができる。   When the semiconductor wafer 4 is protected in such a state and the back surface of the wafer is ground using the grinder 6, the double-sided pressure-sensitive adhesive laminate 20 is securely bonded to the outer portion of the wafer 4 around the entire circumference. For this reason, there is no entry of cleaning water or the like during grinding, and the circuit surface of the wafer is not contaminated. Further, since the apexes of the bumps are in contact with the substrate sheet with an appropriate pressure with respect to the wafer circuit surface, the surface protection sheet is less likely to be peeled off or displaced during grinding. Furthermore, in order to form the protective structure by stacking double-sided adhesive sheets to a desired height in accordance with the height of the bumps formed on the semiconductor wafer to be back-ground, it can be applied to various semiconductor wafers having different bump heights. Can also respond flexibly.

本発明は、上記の保護構造を実現するための各種の経路を提案するものである。   The present invention proposes various routes for realizing the above-described protection structure.

本発明に係る第１の研削方法は、バンプ５が形成された回路表面を有する半導体ウエハ４に、
バンプ５が形成されている部分に対応する開口部３を有する両面粘着シート２を、当該半導体ウエハ４の回路表面外周部分に合わせて、所望の高さになるまで複数枚積み重ねて貼着し（図３参照）、
両面粘着シート積層体２０の開口部を塞ぐように基材シート１を貼付して上記保護構造を実現し（図４参照）、該保護構造の基材シート１側を固定台（図示せず）に戴置し、半導体ウエハ４の裏面側を研削する。 In the first grinding method according to the present invention, a semiconductor wafer 4 having a circuit surface on which bumps 5 are formed is applied to a semiconductor wafer 4.
A plurality of double-sided pressure-sensitive adhesive sheets 2 having openings 3 corresponding to the portions where the bumps 5 are formed are stacked and pasted to a desired height in accordance with the outer peripheral portion of the circuit surface of the semiconductor wafer 4 ( (See Fig. 3)
The base material sheet 1 is pasted so as to close the opening of the double-sided pressure-sensitive adhesive laminate 20 (see FIG. 4), and the base material sheet 1 side of the protective structure is fixed to a base (not shown). The back surface side of the semiconductor wafer 4 is ground.

本発明の半導体ウエハの研削方法に使用されるウエハ４は、回路面上にバンプ５が形成されるものであれば、いかなる構成のウエハであってもよいが、バンプの高さが５０μｍ以上、好ましくは１００μｍ以上であり、最も外に配置されるバンプの位置がウエハの外周から０．７〜３０ｍｍ内側であるウエハが、従来の表面保護用粘着シートでの適用が困難であったが、本発明においてより好適に用いられる。   The wafer 4 used in the semiconductor wafer grinding method of the present invention may be any wafer as long as the bumps 5 are formed on the circuit surface, but the bump height is 50 μm or more, Preferably, the wafer whose thickness is 100 μm or more and the position of the outermost bump is 0.7 to 30 mm inside from the outer periphery of the wafer is difficult to apply with the conventional surface protective adhesive sheet. More preferably used in the invention.

両面粘着シート２は、図２に示すように、芯材フィルム２Ｂの両面に粘着剤層２Ａ，２Ｃが設けられてなる。粘着剤層２Ａ，２Ｃは、ゴム系、アクリル系、シリコーン系、ウレタン系、ビニルエーテル系など汎用の粘着剤から形成されてもよい。また、エネルギー線の照射により硬化して再剥離性となるエネルギー線硬化型粘着剤であってもよい。   As shown in FIG. 2, the double-sided pressure-sensitive adhesive sheet 2 is provided with pressure-sensitive adhesive layers 2A and 2C on both surfaces of a core film 2B. The pressure-sensitive adhesive layers 2A and 2C may be formed of a general-purpose pressure-sensitive adhesive such as rubber, acrylic, silicone, urethane, or vinyl ether. Moreover, the energy ray hardening-type adhesive which hardens | cures by irradiation of an energy ray and becomes removability may be sufficient.

両面粘着シート２の芯材フィルム２Ｂは、ポリエチレンテレフタレートフィルムのような比較的剛性の高いフィルムが好ましい。このような芯材フィルムであれば、ウエハ貼付時の寸法安定性が良好となるため好ましい。芯材フィルム２２に設ける粘着剤は、両面がそれぞれ同じであってもよいが、最終的に形成される両面粘着シート積層体２０において、基材シート１に面する側の粘着剤層が強粘着性を有する粘着剤であり、ウエハに面する側の粘着剤層が再剥離性を示す粘着剤からなるように選択することが好ましい。   The core material film 2B of the double-sided pressure-sensitive adhesive sheet 2 is preferably a film having relatively high rigidity such as a polyethylene terephthalate film. Such a core material film is preferable because the dimensional stability at the time of attaching the wafer becomes good. The pressure-sensitive adhesive provided on the core film 22 may be the same on both sides, but in the finally formed double-sided pressure-sensitive adhesive laminate 20, the pressure-sensitive adhesive layer on the side facing the substrate sheet 1 is strongly adhesive. It is preferable to select such that the pressure-sensitive adhesive layer on the side facing the wafer is made of a pressure-sensitive adhesive exhibiting removability.

芯材フィルム２Ｂの厚さは、特に限定はされず、通常は３〜２５０μｍ、好ましくは２５〜７５μｍである。また、粘着剤層２Ａ、２Ｃの厚さは、通常は５〜４０μｍ、好ましくは１０〜３０μｍである。したがって、両面粘着シート２の総厚は、通常は１３〜３３０μｍ、好ましくは４５〜１３５μｍである。なお、図３以降においては、両面粘着シート２のみ記載し、粘着剤層２Ａ、２Ｃ及び芯材フィルム２Ｂは省略した。   The thickness of the core film 2B is not particularly limited, and is usually 3 to 250 μm, preferably 25 to 75 μm. Moreover, the thickness of adhesive layer 2A, 2C is 5-40 micrometers normally, Preferably it is 10-30 micrometers. Therefore, the total thickness of the double-sided pressure-sensitive adhesive sheet 2 is usually 13 to 330 μm, preferably 45 to 135 μm. In FIG. 3 and subsequent figures, only the double-sided pressure-sensitive adhesive sheet 2 is shown, and the pressure-sensitive adhesive layers 2A and 2C and the core material film 2B are omitted.

本発明に係る第１の研削方法では、両面粘着シート２を打ち抜き、図２に示すようにバンプ５が形成されている部分に対応する開口部３を設ける。両面粘着シート２を打ち抜いて形成される開口部３は、貼付される半導体ウエハの外径よりも小径となるように形成される。また、半導体ウエハに形成されているバンプの存在領域よりも大径となるように開口部３は形成される。この結果、半導体ウエハに両面粘着シート２を貼付すると、バンプの存在領域は、図３に示すように、開口部３に収容される。一方、半導体ウエハの外郭部分には開口部３を囲繞する両面粘着シート２が存在する。   In the first grinding method according to the present invention, the double-sided pressure-sensitive adhesive sheet 2 is punched, and openings 3 corresponding to the portions where the bumps 5 are formed are provided as shown in FIG. The opening 3 formed by punching the double-sided pressure-sensitive adhesive sheet 2 is formed so as to have a smaller diameter than the outer diameter of the semiconductor wafer to be stuck. Further, the opening 3 is formed so as to have a larger diameter than the existing area of the bump formed on the semiconductor wafer. As a result, when the double-sided pressure-sensitive adhesive sheet 2 is affixed to the semiconductor wafer, the bump existing area is accommodated in the opening 3 as shown in FIG. On the other hand, a double-sided pressure-sensitive adhesive sheet 2 that surrounds the opening 3 exists in the outer portion of the semiconductor wafer.

なお、通常使用されているバンプ付き半導体ウエハにおいては、半導体ウエハの内周部にバンプが形成され、外郭部分にはバンプは形成されていない。バンプが形成されない外郭部分の幅は、一定しないが、通常は半導体ウエハの端部から０．７〜３０ｍｍ程度の領域がバンプ不存在の領域となる。   In a semiconductor wafer with bumps that is normally used, bumps are formed on the inner periphery of the semiconductor wafer, and no bumps are formed on the outer portion. The width of the outer portion where the bumps are not formed is not constant, but usually an area of about 0.7 to 30 mm from the end of the semiconductor wafer is an area where there is no bump.

両面粘着シート２には、打ち抜き加工により、上記バンプの存在領域よりも大径となるように開口部３が形成される。かつ両面粘着シート２を介して半導体ウエハを固定するため、開口部３の外径は、半導体ウエハの外径よりも小径である。両面粘着シート２の外径は、貼付される半導体ウエハの外径と等しいか、これよりも大径であることが好ましい。両面粘着シート２は、好ましくは該開口部３を囲繞するように、幅０．５〜２０ｍｍ程度の環状に形成される。   An opening 3 is formed in the double-sided pressure-sensitive adhesive sheet 2 by punching so as to have a larger diameter than the area where the bumps exist. And since a semiconductor wafer is fixed via the double-sided adhesive sheet 2, the outer diameter of the opening part 3 is smaller than the outer diameter of a semiconductor wafer. The outer diameter of the double-sided pressure-sensitive adhesive sheet 2 is preferably equal to or larger than the outer diameter of the semiconductor wafer to be stuck. The double-sided pressure-sensitive adhesive sheet 2 is preferably formed in an annular shape having a width of about 0.5 to 20 mm so as to surround the opening 3.

両面粘着シート２に開口部３を設ける際には、両面粘着シート２の両面に、シリコーン系剥離剤等で処理が施された剥離シートを積層して、両面粘着シートを保護し自己支持性を付与して打ち抜きを行うことが好ましい。打ち抜き後、一方の剥離シートを剥離して粘着剤層を露出させて、粘着剤層を半導体ウエハ４の回路表面外周部分に合わせて貼着し、その後、他方の剥離シートを剥離する。この作業を複数回繰り返して、所望の高さの両面粘着シート積層体２０を設ける。   When the opening 3 is provided in the double-sided pressure-sensitive adhesive sheet 2, a release sheet treated with a silicone-based release agent or the like is laminated on both sides of the double-sided pressure-sensitive adhesive sheet 2 to protect the double-sided pressure-sensitive adhesive sheet and provide self-supporting properties. It is preferable to apply and perform punching. After punching, one release sheet is peeled to expose the pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer is attached to the outer peripheral portion of the circuit surface of the semiconductor wafer 4 and then the other release sheet is peeled off. This operation is repeated a plurality of times to provide the double-sided PSA sheet laminate 20 having a desired height.

両面粘着シート積層体２０の総厚は、ウエハ４の表面に形成されているバンプの高さ、分布密度などに応じて適宜に設定される。両面粘着シート積層体２０の総厚（At）とバンプの高さ（Bt）とした場合、その差（Bt−At）は好ましくは−５〜＋５０μｍ、さらに好ましくは±０〜＋４０μｍ、特に好ましくは＋１０〜＋３０μｍである。例えば、バンプ５の高さ（Bt）が１００μｍであった場合、好ましい両面粘着シート積層体２０の総厚（At）は５０〜１０５μｍ、好ましくは６０〜１００μｍ、特に好ましくは７０〜９０μｍである。このような厚さの関係とすれば、ウエハのバンプ５と基材シート１とが適度な圧力で接し、研削加工時に基材シート１や両面粘着シート２の剥がれや位置ずれ等が起きにくくなる。その差（Bt−At）の値が負であり、両面粘着シート積層体２０がバンプの高さよりも厚く隙間が開いていたとしても、その値が小さければ研削加工時の押し圧による半導体ウエハの撓みにより、適度な圧力が発生し、ウエハ全体が固定可能となる。   The total thickness of the double-sided PSA sheet laminate 20 is appropriately set according to the height, distribution density, etc. of the bumps formed on the surface of the wafer 4. When the total thickness (At) of the double-sided PSA sheet laminate 20 and the bump height (Bt) are used, the difference (Bt-At) is preferably −5 to +50 μm, more preferably ± 0 to +40 μm, particularly preferably. +10 to +30 μm. For example, when the height (Bt) of the bump 5 is 100 μm, the preferable total thickness (At) of the double-sided PSA sheet laminate 20 is 50 to 105 μm, preferably 60 to 100 μm, and particularly preferably 70 to 90 μm. With such a thickness relationship, the wafer bumps 5 and the base sheet 1 are in contact with each other with an appropriate pressure, and the base sheet 1 and the double-sided pressure-sensitive adhesive sheet 2 are less likely to be peeled off or misaligned during grinding. . Even if the difference (Bt-At) has a negative value and the double-sided PSA laminate 20 is thicker than the bump height and has a gap, if the value is small, the semiconductor wafer is pressed by the pressing force during grinding. Due to the bending, an appropriate pressure is generated, and the entire wafer can be fixed.

両面粘着シート積層体２０は、図１、図２、図３に示したように、その外径が、貼付される半導体ウエハの外径とほぼ等しい大きさのリング状に予め打ち抜かれていてもよく、また半導体ウエハに貼付した後に、半導体ウエハの外径に合わせて両面粘着シート積層体２０を切断してもよい。   As shown in FIGS. 1, 2, and 3, the double-sided pressure-sensitive adhesive laminate 20 is pre-punched into a ring shape whose outer diameter is approximately equal to the outer diameter of the semiconductor wafer to be attached. Alternatively, the double-sided pressure-sensitive adhesive laminate 20 may be cut according to the outer diameter of the semiconductor wafer after being attached to the semiconductor wafer.

その後、該両面粘着シート積層体２０の最上層の粘着剤層に、図４に示すように、バンプ５が収容された開口部３を塞ぐように基材シート１が貼付される。   Thereafter, as shown in FIG. 4, the base sheet 1 is attached to the uppermost pressure-sensitive adhesive layer of the double-sided pressure-sensitive adhesive laminate 20 so as to close the openings 3 in which the bumps 5 are accommodated.

基材シート１は、樹脂シートであれば、特に限定されず、各種の樹脂シートが使用可能である。このような樹脂シートとしては、例えば、低密度ポリエチレン、直鎖低密度ポリエチレン、ポリプロピレン、ポリブテン等のポリオレフィン、エチレン酢酸ビニル共重合体、エチレン（メタ）アクリル酸共重合体、エチレン（メタ）アクリル酸エステル共重合体等のエチレン共重合体、ポリエチレンテレフタレート、ポリエチレンナフタレート等のポリエステル、ポリ塩化ビニル、アクリルゴム、ポリアミド、ウレタン、ポリイミド等の樹脂フィルムが挙げられる。基材シート１はこれらの単層であってもよいし、積層体からなってもよい。また、架橋等の処理を施したシートであってもよい。   The base sheet 1 is not particularly limited as long as it is a resin sheet, and various resin sheets can be used. As such a resin sheet, for example, polyolefin such as low density polyethylene, linear low density polyethylene, polypropylene, polybutene, ethylene vinyl acetate copolymer, ethylene (meth) acrylic acid copolymer, ethylene (meth) acrylic acid Examples thereof include ethylene copolymers such as ester copolymers, polyesters such as polyethylene terephthalate and polyethylene naphthalate, and resin films such as polyvinyl chloride, acrylic rubber, polyamide, urethane, and polyimide. The base sheet 1 may be a single layer or a laminate. Moreover, the sheet | seat which gave the process of bridge | crosslinking etc. may be used.

このような基材シート１としては、熱可塑性樹脂を押出成形によりシート化してもよいし、硬化性樹脂を所定手段により薄膜化、硬化してシート化したものが使われてもよい。硬化性樹脂としては、たとえば、エネルギー線硬化性のウレタンアクリレート系オリゴマーを主剤とし、比較的嵩高い基を有するアクリレートモノマーを希釈剤とし、必要に応じて光重合開始剤を配合した樹脂組成物が用いられる。   As such a base sheet 1, a thermoplastic resin may be formed into a sheet by extrusion molding, or a sheet obtained by thinning and curing a curable resin by a predetermined means may be used. Examples of the curable resin include a resin composition in which an energy ray-curable urethane acrylate oligomer is a main component, an acrylate monomer having a relatively bulky group is a diluent, and a photopolymerization initiator is blended as necessary. Used.

基材シート１の厚さは、好ましくは３０〜１０００μｍ、さらに好ましくは５０〜５００μｍ、特に好ましくは１００〜３００μｍである。   The thickness of the base sheet 1 is preferably 30 to 1000 μm, more preferably 50 to 500 μm, and particularly preferably 100 to 300 μm.

また、基材シート１は、図１、図４に示したように、貼付される半導体ウエハの外径とほぼ等しい大きさに予め打ち抜かれていてもよく、また半導体ウエハに貼付した後に、半導体ウエハの外径に合わせて基材シート１を切断してもよい。   Further, as shown in FIGS. 1 and 4, the base sheet 1 may be pre-punched to a size substantially equal to the outer diameter of the semiconductor wafer to be attached, and after being attached to the semiconductor wafer, the semiconductor sheet 1 The substrate sheet 1 may be cut according to the outer diameter of the wafer.

このような工程を経て図４に示す表面保護形態としたウエハ４は、ウエハ研削装置のウエハ固定台（図示せず）に基材シート１側が戴置され、グラインダー６等を用いた通常の研削手法により研削される（図１参照）。   The wafer 4 having the surface protection form shown in FIG. 4 after such a process is placed on the base sheet 1 side on a wafer fixing base (not shown) of a wafer grinding apparatus, and is normally ground using a grinder 6 or the like. It is ground by the method (see FIG. 1).

本発明に係る第２の研削方法は、基材シート１の片面に、半導体ウエハ４のバンプ５が形成されている部分に対応する開口部３を有する両面粘着シート２を、所望の高さになるまで複数枚積み重ねて貼着し、基材シート上に両面粘着シート積層体２０を設け（図５参照）、
両面粘着シート積層体２０の開口部３が、当該半導体ウエハ４のバンプ５が形成されている部分に対応するように位置合わせし、両面粘着シート積層体２０を当該半導体ウエハ４の回路表面外周部分に合わせて貼付し、図４に示す保護構造を形成し、
基材シート１側を固定台に戴置し、半導体ウエハ４の裏面側を研削することを特徴としている。 In the second grinding method according to the present invention, the double-sided pressure-sensitive adhesive sheet 2 having openings 3 corresponding to the portions where the bumps 5 of the semiconductor wafer 4 are formed on one side of the base material sheet 1 is brought to a desired height. A plurality of sheets are stacked and pasted until they become, and a double-sided PSA sheet laminate 20 is provided on the base sheet (see FIG. 5).
The opening 3 of the double-sided pressure-sensitive adhesive laminate 20 is aligned so as to correspond to the portion of the semiconductor wafer 4 where the bumps 5 are formed, and the double-sided pressure-sensitive adhesive laminate 20 is positioned on the outer periphery of the circuit surface of the semiconductor wafer 4. To form the protective structure shown in FIG.
The substrate sheet 1 side is placed on a fixed base, and the back surface side of the semiconductor wafer 4 is ground.

前記第１の研削方法では、半導体ウエハ４上に両面粘着シート２を順次積み重ねて、両面粘着シート積層体２０を設け、その後基材シート１を貼付して図４に示す保護構造を実現したが、第２の研削方法では、図５に示すように、基材シート１上に両面粘着シート２を順次積み重ねて、両面粘着シート積層体２０を設け、その後半導体ウエハ４を貼付して、図４に示す保護構造とする。   In the first grinding method, the double-sided pressure-sensitive adhesive sheet 2 is sequentially stacked on the semiconductor wafer 4 to provide the double-sided pressure-sensitive adhesive sheet laminate 20, and then the base sheet 1 is pasted to realize the protective structure shown in FIG. In the second grinding method, as shown in FIG. 5, the double-sided pressure-sensitive adhesive sheet 2 is sequentially stacked on the base sheet 1 to provide the double-sided pressure-sensitive adhesive sheet laminate 20, and then the semiconductor wafer 4 is pasted. The protective structure is

基材シート１、両面粘着シート２の具体例、好適例は、前記第１の研削方法で説明したものと同様である。また、基材シート１、両面粘着シート２は、予め半導体ウエハ４の外径と略同形状に切断されていてもよく、また半導体ウエハに貼付した後に、半導体ウエハの外径に合わせて基材シート１、両面粘着シート２を切断してもよい。   Specific examples and preferred examples of the base material sheet 1 and the double-sided pressure-sensitive adhesive sheet 2 are the same as those described in the first grinding method. Moreover, the base material sheet 1 and the double-sided pressure-sensitive adhesive sheet 2 may be cut in advance to have substantially the same shape as the outer diameter of the semiconductor wafer 4, and after being attached to the semiconductor wafer, the base material is matched to the outer diameter of the semiconductor wafer. The sheet 1 and the double-sided pressure-sensitive adhesive sheet 2 may be cut.

このような工程を経て図４に示す表面保護形態としたウエハ４は、ウエハ研削装置のウエハ固定台（図示せず）に基材シート１側が戴置され、グラインダー６等を用いた通常の研削手法により研削される。   The wafer 4 having the surface protection form shown in FIG. 4 after such a process is placed on the base sheet 1 side on a wafer fixing base (not shown) of a wafer grinding apparatus, and is normally ground using a grinder 6 or the like. It is ground by the technique.

本発明に係る第３の研削方法は、図６に示すように、剥離シート７の片面に、打ち抜き加工をしていない両面粘着シート２’を所望の高さになるまで複数枚積み重ねて貼着し、
両面粘着シート積層体を、図７に示すように、半導体ウエハ４のバンプ５が形成されている部分に対応する開口部３を形成するように打ち抜き、図８に示すように、剥離シート７上に開口部３を有する両面粘着シート積層体２０を設け、
次いで、図９に示すように、両面粘着シート積層体２０の開口部３が、半導体ウエハ４のバンプ５が形成されている部分に対応するように位置合わせし、両面粘着シートを当該半導体ウエハの回路表面外周部分に合わせて貼付し、
剥離シートを除去し、露出した両面粘着シートの開口部を塞ぐように基材シートを貼付して、図４に示す保護構造を形成し、
基材シート側を固定台に戴置し、半導体ウエハの裏面側を研削することを特徴としている。 In the third grinding method according to the present invention, as shown in FIG. 6, a plurality of double-sided PSA sheets 2 ′ that are not punched are stacked and stuck on one side of the release sheet 7 until a desired height is reached. And
As shown in FIG. 7, the double-sided pressure-sensitive adhesive sheet laminate is punched to form openings 3 corresponding to the portions where the bumps 5 of the semiconductor wafer 4 are formed, and as shown in FIG. The double-sided pressure-sensitive adhesive sheet laminate 20 having the opening 3 is provided on the
Next, as shown in FIG. 9, the openings 3 of the double-sided pressure-sensitive adhesive laminate 20 are aligned so as to correspond to the portions of the semiconductor wafer 4 where the bumps 5 are formed, and the double-sided pressure-sensitive adhesive sheet is attached to the semiconductor wafer. Affix to the outer periphery of the circuit surface,
Remove the release sheet, affix the base sheet so as to close the exposed opening of the double-sided PSA sheet, to form the protective structure shown in FIG.
The base sheet side is placed on a fixed base, and the back side of the semiconductor wafer is ground.

剥離シートは、特に限定されるものではなく、例えば、ポリエチレンテレフタレート、ポリプロピレン、ポリエチレン等の樹脂からなるフィルムまたはそれらの発泡フィルムや、グラシン紙、コート紙、ラミネート紙等の紙に、シリコーン系、フッ素系、長鎖アルキル基含有カルバメート等の剥離剤で剥離処理したものを使用することができる。   The release sheet is not particularly limited. For example, a film made of a resin such as polyethylene terephthalate, polypropylene, or polyethylene or a foamed film thereof, paper such as glassine paper, coated paper, laminated paper, silicone-based, fluorine A system and a release agent such as a long chain alkyl group-containing carbamate can be used.

前記第１の研削方法では、半導体ウエハ４上に両面粘着シート２を順次積み重ねて、両面粘着シート積層体２０を設け、その後基材シート１を貼付して図４に示す保護構造を実現したが、第３の研削方法では、上述したように、いったん剥離シート７上に、開口部３を有する両面粘着シート積層体２０を設けた後に、該両面粘着シート積層体２０を半導体ウエハ４の回路面に転写して、その後、剥離シート７を除去し、露出した両面粘着シート積層体２０の開口部３を塞ぐように基材シート１を貼付して、図４に示す保護構造とする。   In the first grinding method, the double-sided pressure-sensitive adhesive sheet 2 is sequentially stacked on the semiconductor wafer 4 to provide the double-sided pressure-sensitive adhesive sheet laminate 20, and then the base sheet 1 is pasted to realize the protective structure shown in FIG. In the third grinding method, as described above, after the double-sided PSA sheet laminate 20 having the opening 3 is once provided on the release sheet 7, the double-sided PSA sheet laminate 20 is used as the circuit surface of the semiconductor wafer 4. After that, the release sheet 7 is removed, and the base material sheet 1 is pasted so as to close the exposed opening 3 of the double-sided PSA sheet laminate 20 to obtain the protective structure shown in FIG.

基材シート１、両面粘着シート２の具体例、好適例は、前記第１の研削方法で説明したものと同様である。また、基材シート１、両面粘着シート２は、予め半導体ウエハ４の外径と略同形状に切断されていてもよく、また半導体ウエハに貼付した後に、半導体ウエハの外径に合わせて基材シート１、両面粘着シート２を切断してもよい。   Specific examples and preferred examples of the base material sheet 1 and the double-sided pressure-sensitive adhesive sheet 2 are the same as those described in the first grinding method. Moreover, the base material sheet 1 and the double-sided pressure-sensitive adhesive sheet 2 may be cut in advance to have substantially the same shape as the outer diameter of the semiconductor wafer 4, and after being attached to the semiconductor wafer, the base material is matched to the outer diameter of the semiconductor wafer. The sheet 1 and the double-sided pressure-sensitive adhesive sheet 2 may be cut.

このような工程を経て図４に示す表面保護形態としたウエハ４は、ウエハ研削装置のウエハ固定台（図示せず）に基材シート１側が戴置され、グラインダー６等を用いた通常の研削手法により研削される。   The wafer 4 having the surface protection form shown in FIG. 4 after such a process is placed on the base sheet 1 side on a wafer fixing base (not shown) of a wafer grinding apparatus, and is normally ground using a grinder 6 or the like. It is ground by the technique.

本発明に係る第４の研削方法は、図６に示すように、剥離シート７の片面に、打ち抜き加工をしていない両面粘着シート２’を所望の高さになるまで複数枚積み重ねて貼着し、
両面粘着シート積層体を、図７に示すように、半導体ウエハ４のバンプ５が形成されている部分に対応する開口部３を形成するように打ち抜き、図８に示すように、剥離シート７上に開口部３を有する両面粘着シート積層体２０を設け、
次いで、図１０に示すように開口部が形成された両面粘着シート積層体２０を基材シート１に転写し、
両面粘着シート積層体２０の開口部３が、当該半導体ウエハ４のバンプ５が形成されている部分に対応するように位置合わせし、両面粘着シート積層体２０を当該半導体ウエハ４の回路表面外周部分に合わせて貼付し、図４に示す保護構造を形成し、
基材シート１側を固定台に戴置し、半導体ウエハ４の裏面側を研削することを特徴としている。 In the fourth grinding method according to the present invention, as shown in FIG. 6, a plurality of double-sided pressure-sensitive adhesive sheets 2 'that are not punched are stacked and stuck on one side of the release sheet 7 until a desired height is reached. And
As shown in FIG. 7, the double-sided pressure-sensitive adhesive sheet laminate is punched to form openings 3 corresponding to the portions where the bumps 5 of the semiconductor wafer 4 are formed, and as shown in FIG. The double-sided pressure-sensitive adhesive sheet laminate 20 having the opening 3 is provided on the
Next, as shown in FIG. 10, the double-sided PSA sheet laminate 20 having an opening formed thereon is transferred to the base sheet 1,
The opening 3 of the double-sided pressure-sensitive adhesive laminate 20 is aligned so as to correspond to the portion of the semiconductor wafer 4 where the bumps 5 are formed, and the double-sided pressure-sensitive adhesive laminate 20 is positioned on the outer periphery of the circuit surface of the semiconductor wafer 4. To form the protective structure shown in FIG.
The substrate sheet 1 side is placed on a fixed base, and the back surface side of the semiconductor wafer 4 is ground.

前記第３の研削方法では、剥離シート７上に、開口部３を有する両面粘着シート積層体２０を設けた後に、該両面粘着シート積層体２０を半導体ウエハ４の回路面に転写して、その後、剥離シート７を除去し、露出した両面粘着シート積層体２０の開口部３を塞ぐように基材シート１を貼付して、図４に示す保護構造を実現したが、第４の研削方法では、
剥離シート７上に、開口部３を有する両面粘着シート積層体２０を設けた後に、該両面粘着シート積層体２０を基材シート４上に転写して、その後半導体ウエハ４を貼付して、図４に示す保護構造とする。 In the third grinding method, after providing the double-sided PSA sheet laminate 20 having the opening 3 on the release sheet 7, the double-sided PSA sheet laminate 20 is transferred to the circuit surface of the semiconductor wafer 4, and then The release sheet 7 was removed, and the base sheet 1 was applied so as to close the exposed opening 3 of the double-sided pressure-sensitive adhesive laminate 20 to realize the protective structure shown in FIG. 4, but in the fourth grinding method, ,
After providing the double-sided PSA sheet laminate 20 having the opening 3 on the release sheet 7, the double-sided PSA sheet laminate 20 is transferred onto the base sheet 4, and then the semiconductor wafer 4 is pasted. The protective structure shown in FIG.

基材シート１、両面粘着シート２、剥離シート４の具体例、好適例は、前記第１および第３の研削方法で説明したものと同様である。また、基材シート１、両面粘着シート２は、予め半導体ウエハ４の外径と略同形状に切断されていてもよく、また半導体ウエハに貼付した後に、半導体ウエハの外径に合わせて基材シート１、両面粘着シート２を切断してもよい。   Specific examples and preferred examples of the base sheet 1, the double-sided pressure-sensitive adhesive sheet 2 and the release sheet 4 are the same as those described in the first and third grinding methods. Moreover, the base material sheet 1 and the double-sided pressure-sensitive adhesive sheet 2 may be cut in advance to have substantially the same shape as the outer diameter of the semiconductor wafer 4, and after being attached to the semiconductor wafer, the base material is matched to the outer diameter of the semiconductor wafer. The sheet 1 and the double-sided pressure-sensitive adhesive sheet 2 may be cut.

このような工程を経て図４に示す表面保護形態としたウエハ４は、ウエハ研削装置のウエハ固定台（図示せず）に基材シート１側が戴置され、グラインダー６等を用いた通常の研削手法により研削される。   The wafer 4 having the surface protection form shown in FIG. 4 after such a process is placed on the base sheet 1 side on a wafer fixing base (not shown) of a wafer grinding apparatus, and is normally ground using a grinder 6 or the like. It is ground by the technique.

本発明に係る表面保護用シート１０は、上記のウエハ裏面研削に用いられる粘着シートであって、図１、図１０に具体例を示すように、
基材シート１の片面に、貼付する半導体ウエハ４の外径よりも小径の粘着剤層が形成されていない開口部３と、該開口部３を囲繞する粘着剤層とを有し、
前記粘着剤層が複数の両面粘着シートの積層体２０であることを特徴としている。 The surface protective sheet 10 according to the present invention is an adhesive sheet used for the above-mentioned wafer back surface grinding, and as shown in FIG. 1 and FIG.
On one side of the substrate sheet 1, there is an opening 3 in which an adhesive layer having a smaller diameter than the outer diameter of the semiconductor wafer 4 to be attached is formed, and an adhesive layer surrounding the opening 3,
The pressure-sensitive adhesive layer is a laminate 20 of a plurality of double-sided pressure-sensitive adhesive sheets.

すなわち、本発明の表面保護用シート１０は、基材シートの片面に、開口部３を有する両面粘着シート積層体２０が設けられてなる。   That is, the surface protecting sheet 10 of the present invention is provided with the double-sided pressure-sensitive adhesive sheet laminate 20 having the opening 3 on one side of the base material sheet.

このような表面保護シート１０は、前記第２の研削方法について説明したように、基材シート１の片面に、開口部３を有する両面粘着シート２を、複数枚積み重ねて貼着して得ることでき、また、前記第４の研削方法について説明したように、剥離シート７上に、開口部３を有する両面粘着シート積層体２０を設けた後に、該両面粘着シート積層体２０を基材シート１上に転写して得ることもできる。   Such a surface protection sheet 10 is obtained by stacking and adhering a plurality of double-sided PSA sheets 2 having openings 3 on one side of the base sheet 1 as described in the second grinding method. In addition, as described for the fourth grinding method, after providing the double-sided PSA sheet laminate 20 having the opening 3 on the release sheet 7, the double-sided PSA sheet laminate 20 is used as the base sheet 1. It can also be obtained by transferring it to the top.

本発明の半導体ウエハの裏面研削法の一工程を示す。1 shows one step of a method for grinding a semiconductor wafer back surface according to the present invention. 開口部を形成した両面粘着シートの一例を示す。An example of the double-sided adhesive sheet in which the opening part was formed is shown. 第１の裏面研削法の一工程を示す。One process of the 1st back grinding method is shown. 本発明の半導体ウエハの裏面研削法に共通するウエハの保護構造を示す。1 shows a wafer protection structure common to the semiconductor wafer back grinding method of the present invention. 第２の裏面研削法の一工程を示す。One process of the 2nd back surface grinding method is shown. 第３、第４の裏面研削法の一工程を示す。One process of the 3rd and 4th back grinding method is shown. 第３、第４の裏面研削法の一工程を示す。One process of the 3rd and 4th back grinding method is shown. 第３、第４の裏面研削法の一工程を示す。One process of the 3rd and 4th back grinding method is shown. 第３の裏面研削法の一工程を示す。One process of the 3rd back grinding method is shown. 第４の裏面研削法の一工程を示す。One process of the 4th back grinding method is shown. 通常の表面保護用粘着シートＡをウエハのバンプ面に貼付しウエハ裏面研削を行う状態を示す。The state which affixes the normal surface protection adhesive sheet A on the bump surface of a wafer, and performs wafer back surface grinding is shown. 従来の表面保護用シートの使用態様を示す。The usage aspect of the conventional surface protection sheet is shown. 従来の表面保護用シートの巻収体を示す。The conventional rolled-up body of the sheet for surface protection is shown.

符号の説明Explanation of symbols

１…基材シート
２…両面粘着シート
２Ａ，２Ｃ…粘着剤層
２Ｂ…芯材フィルム
２０…両面粘着シート積層体
３…開口部
４…半導体ウエハ
５…バンプ
６…グラインダー
７…剥離シート
１０…表面保護用シート
１１…従来の表面保護用シート
Ａ…通常の表面保護用粘着シート DESCRIPTION OF SYMBOLS 1 ... Base material sheet 2 ... Double-sided adhesive sheet 2A, 2C ... Adhesive layer 2B ... Core material film 20 ... Double-sided adhesive sheet laminated body 3 ... Opening part 4 ... Semiconductor wafer 5 ... Bump 6 ... Grinder 7 ... Release sheet 10 ... Surface Protective sheet 11 ... Conventional surface protective sheet A ... Normal surface protective adhesive sheet

Claims (6)

バンプが形成された回路表面を有する半導体ウエハに、
バンプが形成されている部分に対応する開口部を有する両面粘着シートを、当該半導体ウエハの回路表面外周部分に合わせて、所望の高さになるまで複数枚積み重ねて貼着し、半導体ウエハの回路表面外周部分に両面粘着シート積層体を設け、
両面粘着シート積層体の開口部を塞ぐように基材シートを貼付し、
基材シート側を固定台に戴置し、半導体ウエハの裏面側を研削する半導体ウエハの研削方法。 To a semiconductor wafer having a circuit surface on which bumps are formed,
A plurality of double-sided adhesive sheets having openings corresponding to the portions where the bumps are formed are stacked and pasted to a desired height in accordance with the outer peripheral portion of the circuit surface of the semiconductor wafer. Provide a double-sided adhesive sheet laminate on the outer periphery of the surface,
Paste the base sheet so as to close the opening of the double-sided PSA sheet laminate,
A semiconductor wafer grinding method in which the base sheet side is placed on a fixed base and the back side of the semiconductor wafer is ground. 基材シートの片面に、
バンプが形成された回路表面を有する半導体ウエハのバンプが形成されている部分に対応する開口部を有する両面粘着シートを、所望の高さになるまで複数枚積み重ねて貼着し、基材シート表面に両面粘着シート積層体を設け、
両面粘着シート積層体の開口部が、当該半導体ウエハのバンプが形成されている部分に対応するように位置合わせし、両面粘着シート積層体を当該半導体ウエハの回路表面外周部分に合わせて貼付し、
基材シート側を固定台に戴置し、半導体ウエハの裏面側を研削する半導体ウエハの研削方法。 On one side of the base sheet,
A plurality of double-sided pressure-sensitive adhesive sheets having openings corresponding to the bump-formed portions of the semiconductor wafer having the circuit surface on which the bumps are formed are stacked and pasted until the desired height is reached, and the base sheet surface Provided with a double-sided PSA sheet laminate,
The opening of the double-sided pressure-sensitive adhesive sheet laminate is aligned so as to correspond to the part where the bumps of the semiconductor wafer are formed, and the double-sided pressure-sensitive adhesive sheet laminate is attached to the circuit surface outer peripheral part of the semiconductor wafer,
A semiconductor wafer grinding method in which the base sheet side is placed on a fixed base and the back side of the semiconductor wafer is ground. 剥離シートの片面に、両面粘着シートを所望の高さになるまで複数枚積み重ねて貼着し、
該両面粘着シート積層体を、バンプが形成された回路表面を有する半導体ウエハのバンプが形成されている部分に対応する開口部を形成するように打ち抜き、剥離シート上に両面粘着シート積層体を設け、
打ち抜かれた両面粘着シート積層体の開口部が、当該半導体ウエハのバンプが形成されている部分に対応するように位置合わせし、両面粘着シート積層体を当該半導体ウエハの回路表面外周部分に合わせて貼付し、
剥離シートを除去し、露出した両面粘着シート積層体の開口部を塞ぐように基材シートを貼付し、
基材シート側を固定台に戴置し、半導体ウエハの裏面側を研削する半導体ウエハの研削方法。 Stack and stick multiple adhesive sheets on one side of the release sheet until the desired height is reached,
The double-sided PSA sheet laminate is punched out to form openings corresponding to the bump-formed portions of the semiconductor wafer having the circuit surface on which the bumps are formed, and the double-sided PSA sheet laminate is provided on the release sheet. ,
Align the opening of the punched double-sided pressure-sensitive adhesive laminate so that it corresponds to the portion of the semiconductor wafer where the bumps are formed, and align the double-sided pressure-sensitive adhesive laminate with the outer peripheral portion of the circuit surface of the semiconductor wafer. Affix,
Remove the release sheet and paste the base sheet so as to close the exposed opening of the double-sided PSA sheet laminate,
A semiconductor wafer grinding method in which the base sheet side is placed on a fixed base and the back side of the semiconductor wafer is ground. 剥離シートの片面に、両面粘着シートを所望の高さになるまで複数枚積み重ねて貼着し、
該両面粘着シート積層体を、バンプが形成された回路表面を有する半導体ウエハのバンプが形成されている部分に対応する開口部を形成するように打ち抜き、剥離シート上に両面粘着シート積層体を設け、
打ち抜かれた両面粘着シート積層体を基材シートに転写し、
打ち抜かれた両面粘着シート積層体の開口部が、当該半導体ウエハのバンプが形成されている部分に対応するように位置合わせし、両面粘着シート積層体を当該半導体ウエハの回路表面外周部分に合わせて貼付し、
基材シート側を固定台に戴置し、半導体ウエハの裏面側を研削する半導体ウエハの研削方法。 Stack and stick multiple adhesive sheets on one side of the release sheet until the desired height is reached,
The double-sided PSA sheet laminate is punched out to form openings corresponding to the bump-formed portions of the semiconductor wafer having the circuit surface on which the bumps are formed, and the double-sided PSA sheet laminate is provided on the release sheet. ,
Transfer the punched double-sided adhesive sheet laminate to the base material sheet,
Align the opening of the punched double-sided pressure-sensitive adhesive laminate so that it corresponds to the portion of the semiconductor wafer where the bumps are formed, and align the double-sided pressure-sensitive adhesive laminate with the outer peripheral portion of the circuit surface of the semiconductor wafer. Affix,
A semiconductor wafer grinding method in which the base sheet side is placed on a fixed base and the back side of the semiconductor wafer is ground. 基材シート側を固定台に戴置するに先立ち、基材シートおよび両面粘着シート積層体の外周部を半導体ウエハの外径に合わせて切断除去する工程をさらに含む請求項１〜４の何れかに記載の半導体ウエハの研削方法。   5. The method according to claim 1, further comprising a step of cutting and removing the outer peripheral portion of the base sheet and the double-sided pressure-sensitive adhesive laminate in accordance with the outer diameter of the semiconductor wafer prior to placing the base sheet side on the fixed base. A method for grinding a semiconductor wafer as described in 1. 半導体ウエハの裏面研削を行う際に用いる表面保護用シートであって、
基材シートの片面に、貼付する半導体ウエハの外径よりも小径の粘着剤層が形成されていない開口部と、該開口部を囲繞する粘着剤層とを有し、
前記粘着剤層が複数の両面粘着シートの積層体であることを特徴とする表面保護用シート。 A surface protection sheet used when grinding the back surface of a semiconductor wafer,
On one side of the base sheet, an opening in which an adhesive layer having a diameter smaller than the outer diameter of the semiconductor wafer to be attached is formed, and an adhesive layer surrounding the opening,
The sheet for surface protection, wherein the pressure-sensitive adhesive layer is a laminate of a plurality of double-sided pressure-sensitive adhesive sheets.
JP2007159122A 2007-06-15 2007-06-15 Grinding method of semiconductor wafer, and sheet for surface protection Pending JP2008311514A (en)

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JP2009182100A (en) * 2008-01-30 2009-08-13 Tokyo Seimitsu Co Ltd Wafer processing method for processing bump-formed wafer
EP2204774A2 (en) 2008-12-05 2010-07-07 Sony Corporation Information processing apparatus, information processing method, and program
JP2013211438A (en) * 2012-03-30 2013-10-10 Lintec Corp Surface protection sheet
JP2013232449A (en) * 2012-04-27 2013-11-14 Disco Abrasive Syst Ltd Wafer dividing method
JP2013247133A (en) * 2012-05-23 2013-12-09 Disco Abrasive Syst Ltd Method for sticking surface protective tape
JP2014189626A (en) * 2013-03-27 2014-10-06 Hitachi Chemical Co Ltd Method for producing bonded body and photosensitive adhesive sheet
US9267059B2 (en) 2009-06-05 2016-02-23 Denka Company Limited Adhesive sheet and method of backgrinding semiconductor wafer
JP2017128735A (en) * 2017-03-07 2017-07-27 日立化成株式会社 Production method of bonded article, and photosensitive adhesive sheet
WO2023189168A1 (en) * 2022-03-28 2023-10-05 リンテック株式会社 Workpiece processing method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009182100A (en) * 2008-01-30 2009-08-13 Tokyo Seimitsu Co Ltd Wafer processing method for processing bump-formed wafer
EP2204774A2 (en) 2008-12-05 2010-07-07 Sony Corporation Information processing apparatus, information processing method, and program
US9267059B2 (en) 2009-06-05 2016-02-23 Denka Company Limited Adhesive sheet and method of backgrinding semiconductor wafer
JP2013211438A (en) * 2012-03-30 2013-10-10 Lintec Corp Surface protection sheet
JP2013232449A (en) * 2012-04-27 2013-11-14 Disco Abrasive Syst Ltd Wafer dividing method
JP2013247133A (en) * 2012-05-23 2013-12-09 Disco Abrasive Syst Ltd Method for sticking surface protective tape
JP2014189626A (en) * 2013-03-27 2014-10-06 Hitachi Chemical Co Ltd Method for producing bonded body and photosensitive adhesive sheet
JP2017128735A (en) * 2017-03-07 2017-07-27 日立化成株式会社 Production method of bonded article, and photosensitive adhesive sheet
WO2023189168A1 (en) * 2022-03-28 2023-10-05 リンテック株式会社 Workpiece processing method

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