JP2008311469A - Semiconductor test device, semiconductor test method, program and recording medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique capable of improving a yield by removing foreign matters of cutting chips when the foreign matters adhere to a probe needle by confirming whether the foreign matters adhere thereto in executing a probe test. <P>SOLUTION: This semiconductor test device 1 is used for executing conduction inspection of an element 5 by carrying current to probe needles 213 in a state where the probe needles 213 executing the electric measurement of the element 5 formed on a wafer 51 are brought into contact with the element 5. The device 1 is provided with a polishing sheet 7 executing a removal process of foreign matters hindering conduction by adhering to the needle 213, and a computer 4 as a determination part determining presence of foreign matter removal from the needle 213 by the polishing sheet 7. The computer 4 carries a current to the needle 213 to which the removal process of the foreign matters is executed. When a resistance value of the needle 213 in carrying the current or a converted value of the resistance value to current or voltage satisfies a predetermined condition, it is determined that the foreign matters have been removed from the needle 213. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a technique for inspecting a semiconductor element formed on a semiconductor wafer.

  A large number of semiconductor elements are formed on a semiconductor wafer. A large number of these semiconductor elements are subjected to a probe test, which is a test for determining poor electrical contact, while still being a semiconductor wafer.

  In the probe test, a tester called a prober connected to a semiconductor tester for performing electrical measurement of the semiconductor element is used. The prober is called a probe needle and uses a jig to which voltage is applied from a semiconductor tester.

  The probe needle is formed on the surface of the semiconductor element, and stands on an electrode pad (electric conduction portion) for inputting / outputting signals to / from the outside of the semiconductor element, that is, a so-called bonding pad.

  When a voltage is applied to the probe needle by the semiconductor tester and the current at that time is measured by the semiconductor tester, the semiconductor element is conductive through the probe needle. Judge that there is no.

On the contrary, if the current cannot be measured by the semiconductor tester, it is determined that the semiconductor element has an electrical contact failure.
Japanese Patent Laid-Open No. 6-66869 Japanese Patent No. 3417806 JP 2004-304185 A

  By the way, when the probe needle and the bonding pad are brought into contact with each other, the probe needle may slide on the bonding pad due to the pressing force at the time of contact. By sliding, the material that forms the bonding pad, for example, aluminum, is slightly shaved and becomes a wrinkle. Then, if this wrinkle adheres to the probe needle and the probe test is performed in this state, the contact resistance of the probe needle increases due to the wrinkle, and there is a possibility that an accurate continuity test of the semiconductor element cannot be performed.

  Therefore, a prober as a test apparatus has a probe needle polishing mechanism, and the probe needle is polished at regular intervals to remove the wrinkles from the probe needle.

  However, until now, there has been no inspection as to whether or not foreign matter such as a cutting rod has been reliably removed from the polished probe needle.

  Therefore, if the probe test is performed in a state where the foreign matter is attached to the probe needle, a semiconductor element that is not a defective product may be treated as a defective product due to the foreign matter. As a result, the product yield deteriorates.

  The present invention has been invented in view of the above circumstances. The problem to be solved is that when conducting a semiconductor element probe test using a semiconductor test apparatus, it is confirmed whether or not foreign matter such as a cutting rod adheres to the probe needle. An object of the present invention is to provide a technique for removing foreign substances and increasing the yield.

Therefore, the semiconductor test apparatus of the present invention employs the following means.
That is, the semiconductor test apparatus of the present invention is configured such that a jig for performing electrical measurement of a semiconductor element formed on a semiconductor wafer is energized to the semiconductor element in a state where the jig is in contact with the semiconductor element. This is a semiconductor test apparatus for conducting a continuity test.

  And the foreign substance removal part which performs the removal process of the foreign material adhering to the said jig | tool, and electrifying the said jig | tool, The resistance value of the jig | tool at the time of the said electricity supply, or the conversion value to the electric current or voltage of the said resistance value is And a determination unit that determines whether or not a predetermined condition is satisfied.

  The determination unit energizes the jig that has been subjected to the foreign substance removal processing by the foreign substance removal unit. When the resistance value of the jig at the time of energization or the converted value of the resistance value into a current or voltage satisfies a predetermined condition, it is determined that the foreign matter has been removed from the jig. Here, the predetermined condition is, for example, a value within a predetermined range in which a resistance value or a converted value of the resistance value into a current or a voltage can be determined that foreign matter has been removed from the jig. An example of the jig is a probe needle.

  After the determination is made, a test (probe test) can be performed with high reliability that no foreign matter is attached to the jig. Therefore, it is possible to improve the discrimination between a non-defective semiconductor element and a defective semiconductor element as compared with the conventional case.

  It is preferable to have a counting means for counting the number of times the jig contacts the semiconductor element. When the count number by the counting means reaches a predetermined number, the jig is moved to the foreign substance removing unit and the removing process is performed. This is because as the number of times the jig contacts the semiconductor element increases, the amount of foreign matter attached to the jig increases.

  Here, the predetermined number of times can be determined that the amount of foreign matter adhering to the jig due to the number of times of contact between the jig and the semiconductor element corresponds to an amount sufficient to cause contact failure of the semiconductor element. It refers to a predetermined number of times.

  Examples of the jig include a probe needle connected to a semiconductor tester used for measuring voltage, current, and resistance in order to perform electrical measurement of the semiconductor element.

  When energized in a state where the jig is in contact with the foreign matter removal portion, the resistance value of the jig at the time of energization, or the converted value to the current or voltage of the resistance value does not satisfy the predetermined condition, The foreign matter is removed from the probe needle again by the foreign matter removing unit.

  For this reason, the certainty that a foreign substance is removed from a jig | tool increases, and a continuity test | inspection can be implemented in comfort on the reliability that the foreign substance has not adhered to the jig | tool.

  Examples of the foreign matter removing unit include a conductive polishing sheet and a drive unit that moves the jig on the polishing sheet in order to polish the jig with the polishing sheet. An example of the movement of the jig on the polishing sheet is a reciprocating motion.

  Further, the present invention inspects the continuity of the semiconductor element by energizing the jig in contact with the semiconductor element in a state where the jig for performing electrical measurement of the semiconductor element formed on the semiconductor wafer is in contact with the semiconductor element. It is also a semiconductor test method.

In the semiconductor test method of the present invention, the foreign matter adhering to the jig is removed. And
When the jig subjected to the removal process is energized, and when the resistance value in the jig at the time of energization, or the converted value to the current or voltage of the resistance value satisfies the predetermined condition, It is determined that the foreign matter has been removed from the jig.

  In the semiconductor test method of the present invention, a computer that controls a semiconductor test apparatus that energizes the jig in a state where the jig for performing electrical measurement of the semiconductor element formed on the semiconductor wafer is in contact with the semiconductor element. It is also a semiconductor test method for determining the presence or absence of foreign matter that adheres to the jig and hinders conduction.

In the semiconductor test method of the present invention, the computer executes the following steps.
That is, (a) a step of energizing the jig, (b) when the resistance value of the jig at the time of the energization, or the converted value of the resistance value into a current or voltage satisfies the predetermined condition, It is a step of determining that the foreign matter has been removed from the jig.

  In addition, the present invention allows a computer to control a semiconductor test apparatus that energizes the jig in a state where the jig for performing electrical measurement of the semiconductor element formed on the semiconductor wafer is in contact with the semiconductor element, and thereby It is also a program that causes a computer to determine the presence or absence of a foreign substance that adheres to a tool and hinders conduction.

The program of the present invention causes the computer to function as the following means.
That is, (a) a means for energizing the jig that has been subjected to the foreign matter removal process, (b) a resistance value of the jig at the time of the energization, or a converted value of the resistance value into a current or voltage When the above condition is satisfied, it is means for determining that the foreign matter has been removed from the jig.

  Furthermore, the present invention is also a computer-readable recording medium on which the above program is recorded in order to achieve the above-described object.

  According to the present invention, it is possible to confirm whether or not a cutting stick is attached to the polished probe needle, and when it is attached, the cutting stick is removed. As a result, a highly reliable probe test can be realized and the yield of semiconductor elements can be increased.

Hereinafter, the best mode for carrying out the present invention (hereinafter referred to as an embodiment) will be described based on examples. However, the configuration of this embodiment is an exemplification, and is not intended to limit the scope of the present invention. Accordingly, it goes without saying that various changes can be made without departing from the scope of the present invention.
<Outline of device>

The semiconductor test apparatus is configured such that a probe needle, which is a jig for performing an electrical measurement of a semiconductor element such as an IC or LSI formed on a semiconductor wafer, is energized to the probe needle while being in contact with the semiconductor element. This is an apparatus for conducting a continuity test of a semiconductor element.
The continuity test determines the presence or absence of electrical contact failure of the semiconductor element.
<Overview of semiconductor test equipment>

FIG. 1 is a conceptual diagram of such a semiconductor test apparatus.
The semiconductor test apparatus 1 is a prober 2 that is an inspection machine for performing a probe test, a semiconductor tester 3 that is connected to the prober 2 and performs electrical measurements of semiconductor elements, and a computer that controls the entire apparatus. A workstation 4.

Hereinafter, each component apparatus of the semiconductor test apparatus 1 will be described.
<Prober>

As shown in FIG. 2, the prober 2 includes a probe card 21 having a probe needle 213, a wafer stage 6 on which a semiconductor wafer 51 on which a large number of semiconductor elements 5 as test subjects are formed, and a probe needle 213. A polishing sheet 7 to be polished and a moving device 8 (see a double-headed arrow in FIG. 2 and FIG. 4) for moving the probe card 21 between the wafer stage 6 and the polishing sheet 7 are provided.
<Probe card>

The probe card 21 includes a card unit 211 and a large number of probe needles 213 arranged on the card unit 211.
<Card part>
The card unit 211 is a substrate that supports a large number of probe needles 213.
<Probe needle>

The probe needle 213 is made of tungsten or nickel.
The number of probe needles 213 is determined in accordance with a large number of semiconductor elements 5 formed on the semiconductor wafer 51 placed on the wafer stage 6 and may reach several hundreds.

  The probe needle 213 contacts the bonding pad 511 of the semiconductor element 5 (see FIGS. 3 and 4). Due to the pressing force at the time of the contact, the forming material of the bonding pad 511 and other foreign matters 511 a adhere to the probe needle 213.

The amount of foreign matter 511a adhering to the probe needle is small due to the contact between the probe needle 213 and the bonding pad 511 once. However, the amount of adhesion increases as the number of times the probe needle 213 is brought into contact with the bonding pad 511 increases. If the amount of foreign matter 511a attached is large, the foreign matter 511a obstructs the conduction of the probe needle 213.
<Wafer stage>

In this embodiment, the wafer stage 6 has a round shape in accordance with the outer shape of the semiconductor wafer 51. A polishing sheet 7 is installed at a location slightly separated from the wafer stage 6 (see FIGS. 2 and 4).
<Polished sheet>

The polishing sheet 7 is for carrying out the removal process of the foreign matter 511a adhering to the probe needle 213 by polishing. Therefore, the polishing sheet 7 can be said to be a foreign matter removing unit that removes the foreign matter 511a from the probe needle 213. The polishing sheet 7 may be anything as long as it is made of a conductive abrasive. In this embodiment, a thin sheet-like material is illustrated.
<Moving device>

  The moving device 8 moves the probe card 21 between the wafer stage 6 and the polishing sheet 7 as indicated by double arrows in FIGS.

  Specifically, for example, a transfer arm that freely moves between the wafer stage 6 and the polishing sheet 7 while holding the probe card 21 can be used. In addition, a combination mechanism of a transfer rail laid between the wafer stage 6 and the polishing sheet 7 and the transfer arm configured to move along the transfer rail can be exemplified.

It is preferable that the probe card 21 be movable up and down and front and rear by the moving device 8 (see FIG. 2). Note that the upper side is the upper side when facing the drawing, and the lower side is the lower side. Further, the front and rear are the front direction and the rear direction in the linear direction connecting the wafer stage 6 and the polishing sheet 7. For convenience, in this specification, the side with the wafer stage 6 is referred to as the front, and the polishing sheet 7 is present. Let's call the side forward.

  When the probe card 21 is moved onto the polishing sheet 7 by the moving device 8, the moving device 8 moves the probe card 21 in a state where the probe needle 213 to which the foreign material 511 a is attached is in contact with the polishing sheet 7. Reciprocate. Thereby, the foreign material adhering to the probe needle 213 is removed by the polishing sheet 7.

Therefore, the moving device 8 can also be referred to as a probe needle driving unit that moves the probe needle 213 on the polishing sheet in order to polish the probe needle 213 with the polishing sheet 7. Note that the polishing sheet 7 may reciprocate with respect to the probe card 21.
<Semiconductor tester>

  The semiconductor tester 3 is electrically connected to the subject and energizes the subject. The current value, voltage value, and resistance value when the subject is energized are measured. In this embodiment, the subject is the semiconductor element 5 or the probe needle 213.

The semiconductor tester 3 is used to test whether or not the semiconductor element 5 and the probe needle 213 that are the subject can operate normally. In carrying out the test, power is supplied from the semiconductor tester 3 to the semiconductor element 5 and the probe needle 213. The energization is realized by the workstation 4 instructing the semiconductor tester 3 to energize the semiconductor element 5 and the probe needle 213.
<Workstation>

The workstation 4 controls the entire semiconductor test apparatus 1.
Further, the workstation 4 counts the number of contact between the probe needle 213 and the semiconductor element 5. Therefore, it can be said that the workstation 4 is a counting means. The number of contacts counted by the workstation 4 is referred to as a count number.

  As the number of contacts increases, the amount of foreign matter 511a adhering to the probe needle 213 increases, and the contact resistance also increases. When the deposition amount reaches a certain critical point, the contact resistance increases to such an extent that the semiconductor element causes a contact failure. Therefore, an accurate continuity test cannot be performed even if the probe test is performed.

  The critical point as to whether or not an accurate continuity test cannot be performed due to the amount of deposition can be estimated from the number of contact between the probe needle 213 and the semiconductor element 5.

  The number of contact increases gradually. Then, a predetermined count that can be determined that the amount of foreign matter 511 a attached to the probe needle 213 corresponds to an amount sufficient to cause a contact failure of the semiconductor element 5 due to the number of times of contact between the probe needle 213 and the semiconductor element 5. The number will eventually be reached. When the number of times of contact is within a predetermined number of counts, in this specification, it is referred to as within the number of times of contact.

  The predetermined count is largely based on experience values. The count number is stored in the memory of the workstation 4.

When the count reaches the predetermined number, the workstation 4 causes the moving device 8 to move the probe needle 213 toward the polishing sheet 7. Then, the positioning of the probe needle 213 relative to the polishing sheet 7 is controlled so that the probe needle 213 can be polished by the polishing sheet 7.

  As described above, the probe card 21 held by the transport arm is reciprocated in a state where the probe needle 213 to which the foreign material 511a is attached is brought into contact with the polishing sheet 7, thereby attaching to the probe needle 213. Then, a removal process of the foreign matter 511a that has hindered conduction is performed.

  Note that the probe needle 213 may be polished by the operating time of the semiconductor test apparatus 1 instead of the contact count.

  The workstation 4 also has a function as a determination unit that determines whether or not foreign matter has been sufficiently removed from the probe needle 213 by performing the above-described removal process.

  In order for the workstation 4 to function as a determination unit, the workstation 4 energizes the probe needle 213 that has been subjected to the foreign matter removal process. Then, it is determined whether or not the resistance value of the probe needle 213 during the energization or a value obtained by converting the resistance value into a current or a voltage satisfies a predetermined condition.

  Here, the case where a predetermined condition is satisfied means that the resistance value or a converted value of the resistance value into a current or voltage is a value within a predetermined range where it can be determined that foreign matter has been removed from the probe needle 213. It is.

  For example, when the resistance value or a value obtained by converting the resistance value into a current or voltage is a value within the predetermined range, it is determined that the foreign matter has been removed from the probe needle 213. The value obtained by converting the resistance value R into a current is a current value when the current value I is measured when a constant voltage V is applied to the probe needle and R = V / I. Further, the value obtained by converting the resistance value R into a voltage refers to a value of the voltage drop when the voltage drop V is measured when the constant current I is applied to the probe needle and R = V / I.

  On the other hand, when at least one of the current value, voltage value, and resistance value at the time of energization is not a value within the predetermined range, the foreign material adhering to the probe needle 213 again by the polishing sheet 7 is used. Perform the removal process.

  When the resistance value or a value obtained by converting the resistance value into current or voltage satisfies the predetermined condition, the contact resistance due to the foreign matter 511a is within the reference value (hereinafter referred to as the contact resistance reference value). For example, the resistance value is less than a predetermined resistance, the current value is greater than or equal to a predetermined current, or the voltage drop is less than a predetermined voltage. Measuring the resistance value, current value, and voltage value is called contact resistance measurement.

  Each value of the resistance value, the current value, and the voltage value, which is a criterion for determining whether or not the measured resistance value, current value, and voltage value are within the contact resistance reference value, is stored in a memory (not shown) of the workstation 4. The

Of course, the workstation 4 also has a function as a determination unit for determining whether or not the semiconductor element 5 satisfies the standard as a product. However, since this function is not the essence of the present invention, description thereof is omitted.
<Electric circuit>

FIG. 4 is an electric circuit diagram of the semiconductor test apparatus 1. In FIG. 4, the power supply V supplied to the prober 2 controlled by the workstation 4 and the probe needle 213 are electrically connected, the polishing sheet 7 is grounded via a resistor R, and the moving device 8 A state in which the probe needle 213 is in contact with the polishing sheet 7 is shown.

The movement of the mobile device 8 is controlled by the workstation 4.
The circle symbols A, V, and Ω shown in FIG. 4 mean that the current, voltage, and resistance are measured by the semiconductor tester 3.

Next, with reference to FIG. 5, a series of operations by the semiconductor test apparatus 1 of the present embodiment will be described.
Each step in FIG. 5 is shown by adding a number to the symbol S.

  S1: After a test that is a continuity test of a semiconductor element is started by the semiconductor test apparatus 1, the workstation 4 determines whether or not the number of contact between the probe needle 213 and the semiconductor element 5 is within a contact number reference value. . If a positive determination is made, the process proceeds to S2. If a negative determination is made, the process proceeds to S3.

  S2: The semiconductor tester 3 performs contact resistance measurement according to a command from the workstation 4 and measures at least one of the resistance value, current value, and voltage value of the probe needle 213.

  S3: The probe needle 213 is polished with the polishing sheet 7 in accordance with a command from the workstation 4. Therefore, the probe needle 213 is moved to the polishing sheet 7 by the moving device 8. After moving to the polishing sheet 7, the tip of the probe needle 213 is brought into contact with the polishing sheet 7 and polishing is started. This is called probe needle polishing. The extent to which probe needle polishing is performed is determined by measuring contact resistance each time polishing is gradually advanced. This determination is performed in S4.

  S4: As a result of the contact resistance measurement, it is determined whether or not the resistance value of the probe needle 213 or the converted value of the resistance value into the current or voltage is within the contact resistance reference value. If a positive determination is made, the process proceeds to S5, and if a negative determination is made, the process returns to S3 and the probe needle polishing is performed again.

  In S5, as in S1, it is determined whether or not the number of contacts between the probe needle 213 and the semiconductor element 5 is within the contact count reference value. If an affirmative determination is made, electrical measurement by the semiconductor tester 3 is started to check the continuity of the semiconductor element 5, and if a negative determination is made, the process returns to S3 and probe needle polishing is performed again.

<Action and effect>
Next, functions and effects of the semiconductor test apparatus 1 will be described.
In the semiconductor test apparatus 1, the probe needle 213 to which the foreign material 511 a is attached is energized while being in contact with the polishing sheet 7. At that time, when the resistance value of the probe needle 213 or the converted value of the resistance value into the current or voltage is not a value within the contact resistance reference value, the foreign material 511a is removed from the probe needle 213 by the polishing sheet 7. The removal process to remove is performed.

  The removal process is continued several times until the resistance value of the probe needle 213 or the converted value of the resistance value into a current or voltage becomes a value within the contact resistance reference value.

  For this reason, the certainty that the foreign material 511a is removed from the probe needle 213 increases. Therefore, the continuity test can be performed with confidence under the reliability that the foreign matter 511a is not attached to the probe needle 213. This in turn increases the yield of the semiconductor element.

<Computer-readable recording medium>

A program for causing a computer or other machine or device (hereinafter referred to as a computer or the like) to realize any of the above functions can be recorded on a recording medium that can be read by the computer or the like. The function can be provided by causing a computer or the like to read and execute the program of the recording medium.

  Here, a computer-readable recording medium is a recording medium that stores information such as data and programs by electrical, magnetic, optical, mechanical, or chemical action and can be read from a computer or the like. Say.

  Examples of such a recording medium that can be removed from a computer or the like include a flexible disk, a magneto-optical disk, a CD-ROM, a CD-R / W, a DVD, a DAT, an 8 mm tape, and a memory card.

  In addition, as a recording medium fixed to a computer or the like, there are a hard disk, a ROM (read only memory), and the like.

1 is a conceptual diagram of a semiconductor test apparatus according to the present invention. It is a conceptual diagram of the prober which concerns on this invention. It is a partial expanded sectional view which shows the state which the front-end | tip part of the probe needle which concerns on this invention is contacting the bonding pad which is a predetermined place of a semiconductor element. It is a figure for demonstrating the electric circuit of the semiconductor test apparatus which concerns on this invention. It is a flowchart for showing the procedure about the test | inspection whether the foreign material has adhered to the probe needle using the semiconductor testing apparatus which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor testing apparatus 2 Probe 21 Probe card 211 Card part 213 Probe needle (jig)
3 Semiconductor tester 4 Workstation (determination unit, counting means)
5 Semiconductor element 51 Semiconductor wafer 511 Bonding pad 511a Foreign matter 6 Wafer stage 7 Polishing sheet (foreign matter removing part)
8 Moving device (probe needle drive unit)

Claims (8)

A semiconductor test apparatus for conducting a continuity test of a semiconductor element by energizing the jig while the jig for performing electrical measurement of the semiconductor element formed on the semiconductor wafer is in contact with the semiconductor element. And
A foreign matter removing unit that performs a removal process of the foreign matter adhered to the jig;
A determination unit that energizes the jig and determines whether or not a resistance value of the jig at the time of energization or a converted value of the resistance value to a current or a voltage satisfies a predetermined condition; A semiconductor test apparatus characterized by Having a counting means for counting the number of times the jig contacts the semiconductor element;
2. The semiconductor test apparatus according to claim 1, wherein when the count number reaches a predetermined number, the jig is moved to the foreign substance removing unit and the removing process is performed.   3. The semiconductor test apparatus according to claim 1, wherein when the predetermined condition is not satisfied, the foreign matter is removed from the jig again by the foreign matter removing unit. The foreign matter removing unit is
A conductive abrasive sheet;
The semiconductor test apparatus according to claim 1, further comprising: a driving unit that moves the jig on the polishing sheet in order to polish the jig with the polishing sheet. . A semiconductor test method for inspecting the continuity of a semiconductor element by energizing the jig in a state where a jig for performing electrical measurement of a semiconductor element formed on a semiconductor wafer is in contact with the semiconductor element. ,
Performing the removal process of foreign matter adhering to the jig,
Energize the jig that has been removed,
A semiconductor test method for determining that the foreign matter has been removed from the jig when a resistance value in the jig at the time of energization or a converted value of the resistance value into a current or voltage satisfies a predetermined condition. A computer that controls a semiconductor test apparatus that energizes the jig in a state where a jig for electrical measurement of the semiconductor element formed on the semiconductor wafer is in contact with the semiconductor element is attached to the jig and is electrically connected. A semiconductor test method for determining the presence or absence of foreign matter that hinders
Energizing the jig;
A step of determining that the foreign matter has been removed from the jig when the resistance value of the jig at the time of energization or the converted value of the resistance value into a current or voltage satisfies a predetermined condition; Semiconductor test method performed by. In a state where a jig for electrical measurement of a semiconductor element formed on a semiconductor wafer is in contact with the semiconductor element, a semiconductor test apparatus for energizing the jig is controlled by a computer, and attached to the jig for conduction. Is a program that lets a computer determine the presence or absence of foreign objects
The computer,
Means for energizing the jig that has been subjected to the foreign matter removal process;
When the resistance value of the jig at the time of energization or the converted value of the resistance value into a current or voltage satisfies a predetermined condition, the jig functions as means for determining that the foreign matter has been removed from the jig. Program for. In a state in which a jig for electrical measurement of a semiconductor element formed on a semiconductor wafer is in contact with the semiconductor element, the computer controls a semiconductor test apparatus that energizes the jig,
A computer-readable recording medium that records a program that causes a computer to determine the presence or absence of foreign matter that adheres to the jig and hinders conduction,
In the computer,
Means for energizing the jig that has been subjected to the foreign matter removal process;
When the resistance value of the jig at the time of energization or the converted value of the resistance value into a current or voltage satisfies a predetermined condition, the jig functions as means for determining that the foreign matter has been removed from the jig. A computer-readable recording medium on which a program for recording is recorded.

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