JP2008306285A - Controller of semiconductor switch - Google Patents

Controller of semiconductor switch Download PDF

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JP2008306285A
JP2008306285A JP2007149436A JP2007149436A JP2008306285A JP 2008306285 A JP2008306285 A JP 2008306285A JP 2007149436 A JP2007149436 A JP 2007149436A JP 2007149436 A JP2007149436 A JP 2007149436A JP 2008306285 A JP2008306285 A JP 2008306285A
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semiconductor switch
voltage
circuit
signal
detecting
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Hiroshi Masunaga
博史 益永
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Toshiba Mitsubishi Electric Industrial Systems Corp
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Toshiba Mitsubishi Electric Industrial Systems Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To obtain a controller of a semiconductor switch element, capable of not only detecting the abnormality of a protective circuit to be connected in parallel to a semiconductor switching element, but also the abnormality of the semiconductor switching element. <P>SOLUTION: The drive circuit of the semiconductor switch performs on-off control of the switch by supplying a voltage to a gate terminal. The drive circuit is provided with a gate voltage detecting means 5 for detecting the output voltage of the drive circuit 3; a main voltage detecting means 9 for detecting the main terminal voltage of the semiconductor switch 4; a first signal insulating means 6 for optically insulating the gate voltage state and transmitting it to a low-voltage circuit; a second signal insulating means 10 for optically insulating the main voltage of the semiconductor switch and transmitting it to the low voltage circuit; and discriminating means 7, 11 for respectively comparing a signal of the first signal insulating means with a driving command of the semiconductor switch and a signal of the second signal insulating means with a driving command of the semiconductor switch, and discriminating whether they are normal or abnormal. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

この発明は、半導体スイッチ素子を用いた電力変換装置に関し、特に電力変換装置の半導体スイッチの制御装置に関するものである。   The present invention relates to a power conversion device using a semiconductor switch element, and more particularly to a control device for a semiconductor switch of the power conversion device.

電力変換装置にはＧＴＯ、ＩＧＢＴといった半導体スイッチ素子が使用されている。電力変換装置の被害拡大を抑制するため、従来から半導体スイッチ素子の故障検出方法が提案されている（例えば、特許文献１参照）。
図５に特許文献１の図２に記載されている半導体スイッチ素子の故障検出方法を示す。
図５において、１は半導体スイッチ素子に駆動信号を与える制御回路であり、一般的には電気的に絶縁する絶縁回路２を介して、駆動回路３に駆動信号が与えられる。駆動回路３は駆動信号にもとづき、半導体スイッチ素子４にゲート信号を与え、ゲート信号がＨｉになると半導体スイッチ素子４はオンし、ゲート信号がＬｏになると半導体スイッチ素子４はオフする。
５はゲート電圧が予め設定された電圧以上あることを検出し、半導体スイッチ素子４がオン状態かオフ状態を判別するゲート電圧検出回路である。６は半導体スイッチ素子４のオン・オフ状態信号を絶縁し、低圧回路側に与える絶縁回路であり、７は半導体スイッチ素子４のオン・オフ状態が異常の場合、制御回路１に異常状態をフィードバックする正常／異常検出回路である。
ゲート電圧が異常の場合、制御回路がゲートオフ指令を出すことにより、被害拡大を抑制する。 A semiconductor switch element such as GTO or IGBT is used in the power conversion device. In order to suppress the damage expansion of the power conversion device, a failure detection method for a semiconductor switch element has been conventionally proposed (see, for example, Patent Document 1).
FIG. 5 shows a failure detection method of the semiconductor switch element described in FIG.
In FIG. 5, reference numeral 1 denotes a control circuit for supplying a drive signal to the semiconductor switch element. In general, the drive signal is applied to the drive circuit 3 through an insulating circuit 2 that is electrically insulated. The drive circuit 3 applies a gate signal to the semiconductor switch element 4 based on the drive signal. When the gate signal becomes Hi, the semiconductor switch element 4 is turned on, and when the gate signal becomes Lo, the semiconductor switch element 4 is turned off.
Reference numeral 5 denotes a gate voltage detection circuit that detects that the gate voltage is equal to or higher than a preset voltage and determines whether the semiconductor switch element 4 is on or off. 6 is an insulating circuit that insulates the on / off state signal of the semiconductor switch element 4 and gives it to the low-voltage circuit side, and 7 is an feedback of the abnormal state to the control circuit 1 when the on / off state of the semiconductor switch element 4 is abnormal. This is a normal / abnormality detection circuit.
When the gate voltage is abnormal, the control circuit issues a gate-off command to suppress the damage expansion.

特開２００３−１４３８３３号公報JP 2003-143833 A

従来の技術は上記のように構成されているため、半導体スイッチ素子に並列に接続されているスナバ回路等の保護回路が短絡破壊している場合には異常が検出できないといった問題点があった。特に、半導体スイッチが直列接続された電力変換装置においては、オフ状態で半導体スイッチ素子が正常にオフし、電圧を分担していることが重要となり、半導体スイッチ素子に並列に接続された保護回路を含めた健全性を確認する必要がある。   Since the conventional technique is configured as described above, there is a problem in that an abnormality cannot be detected when a protective circuit such as a snubber circuit connected in parallel to the semiconductor switch element is broken. In particular, in a power conversion device in which semiconductor switches are connected in series, it is important that the semiconductor switch element is normally turned off in the off state and shares the voltage, and a protection circuit connected in parallel to the semiconductor switch element is provided. It is necessary to check the soundness included.

この発明は上記のような問題を解決するためになされたものであり、半導体スイッチ素子だけではなく、半導体スイッチ素子に並列に接続される保護回路の異常を検出できる半導体スイッチ素子の制御回路を提供することを目的とする。   The present invention has been made to solve the above-described problems, and provides a control circuit for a semiconductor switch element that can detect not only a semiconductor switch element but also an abnormality in a protection circuit connected in parallel to the semiconductor switch element. The purpose is to do.

この発明に係る半導体スイッチの制御装置においては、ゲート端子に電圧を供給することでオン・オフを制御する半導体スイッチの駆動回路において、駆動回路の出力ゲート電圧を検出するゲート電圧検出手段と、半導体スイッチの主端子電圧を検出する主電圧検出手段と、ゲート電圧状態を光絶縁して低圧回路に伝達する第一の信号絶縁手段と、半導体スイッチの主電圧状態を光絶縁して低圧回路に伝達する第二の信号絶縁手段と、第一の信号絶縁手段の信号と半導体スイッチの駆動指令、第二の信号絶縁手段の信号と半導体スイッチの駆動指令とを各々比較し、正常又は異常を判別する判別手段とを備えたものである。   In the semiconductor switch control device according to the present invention, in the semiconductor switch drive circuit for controlling on / off by supplying a voltage to the gate terminal, the gate voltage detection means for detecting the output gate voltage of the drive circuit, and the semiconductor Main voltage detection means for detecting the main terminal voltage of the switch, first signal insulation means for optically isolating and transmitting the gate voltage state to the low voltage circuit, and optically isolating and transmitting the main voltage state of the semiconductor switch to the low voltage circuit The second signal insulation means, the signal from the first signal insulation means and the drive command for the semiconductor switch, and the signal from the second signal insulation means and the drive command for the semiconductor switch are respectively compared to determine normality or abnormality. Discriminating means.

また、この発明に係る半導体スイッチの制御装置においては、ゲート端子に電圧を供給することでオン・オフを制御する半導体スイッチの駆動回路において、駆動回路の出力ゲート電圧を検出するゲート電圧検出手段と、半導体スイッチの主端子電圧を検出する主電圧検出手段と、半導体スイッチの駆動回路に与えられた駆動指令により、低圧回路に伝達する信号を切換える選択手段と、選択手段の出力を絶縁して低圧回路に伝達する手段と、絶縁され伝達された選択手段の出力と半導体スイッチの駆動指令とを比較し、正常又は異常を判別する判別手段とを備えたものである。   Further, in the semiconductor switch control device according to the present invention, in the semiconductor switch drive circuit for controlling on / off by supplying a voltage to the gate terminal, the gate voltage detection means for detecting the output gate voltage of the drive circuit; The main voltage detection means for detecting the main terminal voltage of the semiconductor switch, the selection means for switching the signal transmitted to the low-voltage circuit according to the drive command given to the drive circuit of the semiconductor switch, and the output of the selection means is insulated and the low-voltage Means for transmitting to the circuit and means for discriminating between normal and abnormal by comparing the output of the insulated and transmitted selection means with the driving command of the semiconductor switch are provided.

この発明によれば、半導体スイッチ素子の異常だけではなく、並列に接続された保護回路の異常も検出できるため、より信頼性の高い電力変換装置を得ることができる。   According to the present invention, not only the abnormality of the semiconductor switch element but also the abnormality of the protection circuit connected in parallel can be detected, so that a more reliable power conversion device can be obtained.

実施の形態１．
以下、この発明の実施の形態１における半導体スイッチの制御装置を図１に基づいて説明する。図１において、従来と同じものは同じ符号をつけて説明する。
図１において、１は半導体スイッチ素子に駆動信号を与える制御回路、２は駆動信号を絶縁する絶縁回路、３は駆動信号にもとづきゲート電圧を発生する駆動回路、４は半導体スイッチ素子、８は半導体スイッチ素子４に印加される電圧を抑制するために設置されたスナバ回路等の保護回路である。半導体スイッチ素子４は制御回路１が発生する駆動信号にもとづきオン・オフする。
５は駆動回路３の出力ゲート電圧が予め設定された電圧以上あることを検出し、半導体スイッチ素子４がオン状態かオフ状態を判別するゲート電圧検出回路、６は半導体スイッチ素子４のゲート電圧状態信号を光絶縁し、低圧回路側に伝達する第一の信号絶縁回路、７は半導体スイッチ素子４のオン・オフ状態の異常を検出する正常／異常検出回路であり、半導体スイッチ素子４の状態が異常になった場合は、異常信号を制御回路１にフィードバックし、半導体スイッチ素子４を遮断することで、被害拡大を抑制する。９は半導体スイッチ素子４に印加される主端子電圧を検出する主電圧検出回路、１０は半導体スイッチ素子４に印加される主電圧状態信号を光絶縁し、低圧回路に送信する第二の信号絶縁回路、１１は半導体スイッチ素子４の電圧印加状態の正常又は異常を判別する判別手段としての正常／異常検出回路である。 Embodiment 1 FIG.
A semiconductor switch control apparatus according to Embodiment 1 of the present invention will be described below with reference to FIG. In FIG. 1, the same parts as those in the prior art will be described with the same reference numerals.
In FIG. 1, 1 is a control circuit for supplying a drive signal to a semiconductor switch element, 2 is an insulation circuit for insulating the drive signal, 3 is a drive circuit for generating a gate voltage based on the drive signal, 4 is a semiconductor switch element, and 8 is a semiconductor. It is a protection circuit such as a snubber circuit installed to suppress the voltage applied to the switch element 4. The semiconductor switch element 4 is turned on / off based on a drive signal generated by the control circuit 1.
Reference numeral 5 denotes a gate voltage detection circuit which detects that the output gate voltage of the drive circuit 3 is equal to or higher than a preset voltage and determines whether the semiconductor switch element 4 is in an on state or an off state, and 6 is a gate voltage state of the semiconductor switch element 4 A first signal insulation circuit that optically insulates the signal and transmits it to the low-voltage circuit side, 7 is a normal / abnormality detection circuit that detects an abnormality in the on / off state of the semiconductor switch element 4, and the state of the semiconductor switch element 4 is When an abnormality occurs, an abnormal signal is fed back to the control circuit 1 and the semiconductor switch element 4 is cut off, thereby suppressing damage expansion. 9 is a main voltage detection circuit for detecting the main terminal voltage applied to the semiconductor switch element 4, and 10 is a second signal insulation for optically isolating the main voltage state signal applied to the semiconductor switch element 4 and transmitting it to the low voltage circuit. A circuit 11 is a normal / abnormality detection circuit serving as a determination unit that determines whether the voltage application state of the semiconductor switch element 4 is normal or abnormal.

次に動作について、図２にもとづき説明する。図２は制御装置の動作を示す表であり、最上欄の左から右に向かって、駆動指令、ゲート電圧状態、主電圧状態、ゲート電圧不一致状態、主電圧不一致状態、備考の項目が順に配列されており、この各項目の下に１行目〜８行目まで数字等が記載されている。駆動指令の１はＯＮ、０はＯＦＦ、ゲート電圧状態の１はゲート電圧有、０はゲート電圧無、主電圧状態の１は主電圧無、０は主電圧有、ゲート電圧不一致状態及び主電圧不一致状態の１は異常、０は正常を示している。
ゲート電圧検出回路５にて検出されたゲート電圧状態と制御回路１のオン・オフ指令の不一致を検出することにより、ゲート電圧不一致異常（３行目〜６行目）を検出して、ゲート遮断等の保護動作を行い、被害の拡大を抑制する。また、主電圧検出回路９にて検出された主電圧状態と制御回路１のオン・オフ指令の不一致を検出することにより、主電圧不一致異常（２行目、４行目、５行目、７行目）を検出して、ゲート遮断等の保護動作を行い、被害の拡大を抑制する。 Next, the operation will be described with reference to FIG. FIG. 2 is a table showing the operation of the control device. From left to right in the uppermost column, the drive command, gate voltage state, main voltage state, gate voltage mismatch state, main voltage mismatch state, and remarks are arranged in order. Numbers and the like are described from the first line to the eighth line below each item. Drive command 1 is ON, 0 is OFF, gate voltage state 1 is gate voltage is present, 0 is gate voltage is not present, main voltage state 1 is main voltage is not present, 0 is main voltage is present, gate voltage mismatch state and main voltage The mismatched state 1 indicates an abnormality and 0 indicates a normal state.
By detecting a mismatch between the gate voltage state detected by the gate voltage detection circuit 5 and the ON / OFF command of the control circuit 1, a gate voltage mismatch abnormality (3rd to 6th lines) is detected and the gate is cut off. To prevent the damage from spreading. Further, by detecting a mismatch between the main voltage state detected by the main voltage detection circuit 9 and the ON / OFF command of the control circuit 1, a main voltage mismatch error (second line, fourth line, fifth line, 7) Line) is detected and protective actions such as gate shutoff are performed to suppress the spread of damage.

この実施の形態１では上記の構成としているため、半導体スイッチ素子の異常だけではなく、並列に接続された保護回路の異常も検出できるため、より信頼性の高い電力変換装置を得ることができる。   Since the first embodiment has the above-described configuration, not only the abnormality of the semiconductor switch element but also the abnormality of the protection circuit connected in parallel can be detected, so that a more reliable power conversion device can be obtained.

実施の形態２．
以下、この発明の実施の形態２における半導体スイッチの制御装置を図３に基づいて説明する。図３において、実施の形態１と同じものは同じ符号をつけて説明する。
図３において、１は半導体スイッチ素子に駆動信号を与える制御回路、２は駆動信号を絶縁する絶縁回路、３は駆動信号にもとづきゲート電圧を発生する駆動回路、４は半導体スイッチ素子、８は半導体スイッチ素子４に印加される電圧を抑制するために設置されたスナバ回路等の保護回路である。半導体スイッチ素子４は制御回路１が発生する駆動信号にもとづきオン・オフする。
５は駆動回路３の出力ゲート電圧が予め設定された電圧以上あることを検出し、半導体スイッチ素子４がオン状態かオフ状態を判別するゲート電圧検出回路、９は半導体スイッチ素子４に印加される主端子電圧を検出する主電圧検出回路、１２は駆動回路３に与えられる駆動信号により半導体スイッチ素子４の状態信号を選択する選択回路、６は選択回路１２の出力を光絶縁し、低圧回路に送信する第一の信号絶縁回路、１３は半導体スイッチ素子４の正常又は異常状態を判別する判別手段としての正常／異常検出回路である。 Embodiment 2. FIG.
A semiconductor switch control apparatus according to Embodiment 2 of the present invention will be described below with reference to FIG. In FIG. 3, the same components as those in the first embodiment are described with the same reference numerals.
In FIG. 3, 1 is a control circuit for supplying a drive signal to the semiconductor switch element, 2 is an insulation circuit for insulating the drive signal, 3 is a drive circuit for generating a gate voltage based on the drive signal, 4 is a semiconductor switch element, and 8 is a semiconductor. It is a protection circuit such as a snubber circuit installed to suppress the voltage applied to the switch element 4. The semiconductor switch element 4 is turned on / off based on a drive signal generated by the control circuit 1.
Reference numeral 5 denotes a gate voltage detection circuit that detects that the output gate voltage of the drive circuit 3 is equal to or higher than a preset voltage and determines whether the semiconductor switch element 4 is in an on state or an off state, and 9 is applied to the semiconductor switch element 4 A main voltage detection circuit for detecting a main terminal voltage, 12 is a selection circuit for selecting a state signal of the semiconductor switch element 4 by a drive signal applied to the drive circuit 3, and 6 is an optically insulated output of the selection circuit 12 to form a low voltage circuit A first signal insulation circuit 13 for transmission is a normal / abnormality detection circuit as a determination means for determining the normal or abnormal state of the semiconductor switch element 4.

次に動作について、図４にもとづき説明する。図４は制御装置の動作を示す表であり、最上欄の左から右に向かって、駆動指令、ゲート電圧状態、主電圧状態、選択回路出力、素子不一致状態、備考の項目が順に配列されており、この各項目の下に１行目〜８行目まで数字等が記載されている。駆動指令の１はＯＮ、０はＯＦＦ、ゲート電圧状態の１はゲート電圧有、０はゲート電圧無、主電圧状態の１は主電圧無、０は主電圧有、選択回路出力の１はゲート電圧状態を選択、０は主電圧状態を選択、素子不一致状態の１は異常、０は正常を示している。
駆動回路３に与えられる駆動指令がオン指令の場合、選択回路１２はゲート電圧状態を選択し、第一の信号絶縁回路６を介して、低圧回路に半導体スイッチ素子４のゲート電圧状態を送信する。
駆動回路３に与えられる駆動指令がオフ指令の場合、選択回路１２は主電圧状態を選択し、第一の信号絶縁回路６を介して、低圧回路に半導体スイッチ素子４の主電圧状態を送信する。
正常／異常検出回路１３は制御回路１の駆動指令とゲート電圧・主電圧状態との不一致異常（３行目〜５行目、７行目）を検出し、ゲート遮断等の保護動作を行い、被害の拡大を抑制する。 Next, the operation will be described with reference to FIG. FIG. 4 is a table showing the operation of the control device. From left to right in the uppermost column, drive commands, gate voltage states, main voltage states, selection circuit outputs, element mismatch states, and remarks items are arranged in order. In addition, numbers and the like are written under the items from the first line to the eighth line. Drive command 1 is ON, 0 is OFF, 1 in the gate voltage state is with gate voltage, 0 is without gate voltage, 1 in the main voltage state is without main voltage, 0 is with main voltage, 1 in the selection circuit output is gate The voltage state is selected, 0 is the main voltage state, 1 in the element mismatch state is abnormal, and 0 is normal.
When the drive command given to the drive circuit 3 is an on command, the selection circuit 12 selects the gate voltage state, and transmits the gate voltage state of the semiconductor switch element 4 to the low voltage circuit via the first signal insulation circuit 6. .
When the drive command given to the drive circuit 3 is an off command, the selection circuit 12 selects the main voltage state, and transmits the main voltage state of the semiconductor switch element 4 to the low voltage circuit via the first signal insulation circuit 6. .
The normality / abnormality detection circuit 13 detects an inconsistency abnormality (3rd to 5th lines, 7th line) between the drive command of the control circuit 1 and the gate voltage / main voltage state, and performs protective operation such as gate shut-off. Control the spread of damage.

この実施の形態２では上記の構成としているため、半導体スイッチ素子の駆動回路と制御回路間の信号を電気的に絶縁する絶縁回路を少なくすることが可能であり、低コストで従来実施例に比べ信頼性の高い半導体スイッチ素子の制御回路を得ることができる。   Since the second embodiment has the above-described configuration, it is possible to reduce the number of insulating circuits that electrically insulate the signal between the drive circuit of the semiconductor switch element and the control circuit, and at a lower cost than the conventional example. A highly reliable control circuit for a semiconductor switch element can be obtained.

この発明の実施の形態１における半導体スイッチの制御装置を示す構成図１である。BRIEF DESCRIPTION OF THE DRAWINGS It is the block diagram 1 which shows the control apparatus of the semiconductor switch in Embodiment 1 of this invention. この発明の実施の形態１における半導体スイッチの制御装置の動作を示す表である。It is a table | surface which shows operation | movement of the control apparatus of the semiconductor switch in Embodiment 1 of this invention. この発明の実施の形態２における半導体スイッチの制御装置を示す構成図１である。It is the block diagram 1 which shows the control apparatus of the semiconductor switch in Embodiment 2 of this invention. この発明の実施の形態２における半導体スイッチの制御装置の動作を示す表である。It is a table | surface which shows operation | movement of the control apparatus of the semiconductor switch in Embodiment 2 of this invention. 従来の半導体スイッチの制御装置を示す構成図である。It is a block diagram which shows the control apparatus of the conventional semiconductor switch.

符号の説明Explanation of symbols

１ 制御回路
２ 絶縁回路
３ 駆動回路
４ 半導体スイッチ素子
５ ゲート電圧検出回路
６ 第一の信号絶縁回路
７ 正常／異常検出回路（判別手段）
８ 保護回路
９ 主電圧検出回路
１０ 第二の信号絶縁回路
１１ 正常／異常検出回路（判別手段）
１２ 選択回路
１３ 正常／異常検出回路（判別手段） DESCRIPTION OF SYMBOLS 1 Control circuit 2 Insulation circuit 3 Drive circuit 4 Semiconductor switch element 5 Gate voltage detection circuit 6 1st signal insulation circuit 7 Normal / abnormality detection circuit (discrimination means)
8 Protection circuit 9 Main voltage detection circuit 10 Second signal insulation circuit 11 Normal / abnormal detection circuit (discriminating means)
12 selection circuit 13 normal / abnormality detection circuit (discrimination means)

Claims (2)

ゲート端子に電圧を供給することでオン・オフを制御する半導体スイッチの駆動回路において、
前記駆動回路の出力ゲート電圧を検出するゲート電圧検出手段と、
前記半導体スイッチの主端子電圧を検出する主電圧検出手段と、
前記ゲート電圧状態を光絶縁して低圧回路に伝達する第一の信号絶縁手段と、
前記半導体スイッチの主電圧状態を光絶縁して低圧回路に伝達する第二の信号絶縁手段と、
前記第一の信号絶縁手段の信号と半導体スイッチの駆動指令、前記第二の信号絶縁手段の信号と半導体スイッチの駆動指令とを各々比較し、正常又は異常を判別する判別手段と、
を備えたことを特徴とする半導体スイッチの制御装置。 In a semiconductor switch drive circuit that controls on / off by supplying a voltage to the gate terminal,
Gate voltage detection means for detecting an output gate voltage of the drive circuit;
Main voltage detecting means for detecting a main terminal voltage of the semiconductor switch;
First signal insulation means for optically isolating and transmitting the gate voltage state to a low voltage circuit;
Second signal insulation means for optically isolating and transmitting the main voltage state of the semiconductor switch to the low-voltage circuit;
A discrimination means for comparing the signal of the first signal insulation means and the drive command of the semiconductor switch, the signal of the second signal insulation means and the drive command of the semiconductor switch, respectively, and discriminating normality or abnormality;
A control device for a semiconductor switch, comprising: ゲート端子に電圧を供給することでオン・オフを制御する半導体スイッチの駆動回路において、
前記駆動回路の出力ゲート電圧を検出するゲート電圧検出手段と、
前記半導体スイッチの主端子電圧を検出する主電圧検出手段と、
前記半導体スイッチの駆動回路に与えられた駆動指令により、低圧回路に伝達する信号を切換える選択手段と、
前記選択手段の出力を絶縁して低圧回路に伝達する手段と、
前記絶縁され伝達された選択手段の出力と前記半導体スイッチの駆動指令とを比較し、正常又は異常を判別する判別手段と、
を備えたことを特徴とする半導体スイッチの制御装置。 In a semiconductor switch drive circuit that controls on / off by supplying a voltage to the gate terminal,
Gate voltage detection means for detecting an output gate voltage of the drive circuit;
Main voltage detecting means for detecting a main terminal voltage of the semiconductor switch;
Selection means for switching a signal transmitted to the low-voltage circuit according to a drive command given to the drive circuit of the semiconductor switch;
Means for insulating and transmitting the output of the selection means to the low-voltage circuit;
A determination means for comparing the output of the insulated and transmitted selection means with a drive command for the semiconductor switch to determine normality or abnormality,
A control device for a semiconductor switch, comprising:
JP2007149436A 2007-06-05 2007-06-05 Controller of semiconductor switch Pending JP2008306285A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013158169A (en) * 2012-01-31 2013-08-15 Denso Corp Driver of driven switching element
JP2016012986A (en) * 2014-06-30 2016-01-21 日立オートモティブシステムズ株式会社 Drive circuit device
CN112204845A (en) * 2018-05-31 2021-01-08 东芝三菱电机产业系统株式会社 Uninterruptible power supply device
CN114337295A (en) * 2021-11-26 2022-04-12 深圳市创芯微微电子有限公司 Synchronous rectification chip, control end grounding protection circuit thereof and switching power supply
KR20240073914A (en) 2022-10-06 2024-05-27 가부시키가이샤 티마이크 power supply

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JPH0286210A (en) * 1988-09-21 1990-03-27 Toyota Autom Loom Works Ltd Abnormality detection circuit for transistor
JPH11356035A (en) * 1998-06-04 1999-12-24 Hitachi Ltd Gate driving device for voltage-driven self-arc-extinguishing element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013158169A (en) * 2012-01-31 2013-08-15 Denso Corp Driver of driven switching element
JP2016012986A (en) * 2014-06-30 2016-01-21 日立オートモティブシステムズ株式会社 Drive circuit device
CN112204845A (en) * 2018-05-31 2021-01-08 东芝三菱电机产业系统株式会社 Uninterruptible power supply device
CN112204845B (en) * 2018-05-31 2024-03-08 东芝三菱电机产业系统株式会社 Uninterruptible power supply device
CN114337295A (en) * 2021-11-26 2022-04-12 深圳市创芯微微电子有限公司 Synchronous rectification chip, control end grounding protection circuit thereof and switching power supply
CN114337295B (en) * 2021-11-26 2023-09-22 深圳市创芯微微电子股份有限公司 Synchronous rectification chip and control terminal grounding protection circuit and switching power supply thereof
KR20240073914A (en) 2022-10-06 2024-05-27 가부시키가이샤 티마이크 power supply

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