JP2008298485A - Photoelectric sensor - Google Patents

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JP2008298485A
JP2008298485A JP2007142596A JP2007142596A JP2008298485A JP 2008298485 A JP2008298485 A JP 2008298485A JP 2007142596 A JP2007142596 A JP 2007142596A JP 2007142596 A JP2007142596 A JP 2007142596A JP 2008298485 A JP2008298485 A JP 2008298485A
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light
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photoelectric sensor
multilayer substrate
optical element
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Takashi Suzuki
尚 鈴木
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Azbil Corp
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Azbil Corp
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<P>PROBLEM TO BE SOLVED: To provide a small, highly reliable photoelectric sensor having built therein a multi-layer substrate superior in mounting density. <P>SOLUTION: This photoelectric sensor 1 comprises a multi-layer substrate 100 having optical elements 111, 131 and a multi-purpose IC mounted on an identical face. A common recessed section 130 in which the optical element 111 and the multi-purpose IC are accommodated is formed on the identical face of the multi-layer substrate 100, and recessed sections 140, 150 are formed at a part of the bottom face of the common recessed section. The multi-purpose ICs are accommodated in the recessed sections 140, 150, respectively, and the optical element 131 is placed on the bottom face 130a out of the recessed sections 140, 150 in the common recessed section 130. The whole top face of each of the multi-purpose ICs is covered with a light-shading resin. A light transmissive resin is injected to the common recessed section so as to cover at least the top face of the optical element 131. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、物体の有無を光学的に検知するのに利用される光電センサに関する。   The present invention relates to a photoelectric sensor used for optically detecting the presence or absence of an object.

従来から、物体の有無を光学的に検知するのに光電センサが用いられている。そして、光電センサの小型化を図るために、光電センサ内部に多数の能動素子と受動素子を一枚の基板に実装し、かつ積層された基板に回路パターンを立体的に形成した多層構造のいわゆる多層基板が用いられることがある(例えば、特許文献1参照)。
特開平6−42983号公報(5頁、図1)
Conventionally, a photoelectric sensor has been used to optically detect the presence or absence of an object. In order to reduce the size of the photoelectric sensor, a so-called multilayer structure in which a large number of active elements and passive elements are mounted on a single substrate inside the photoelectric sensor, and circuit patterns are three-dimensionally formed on the stacked substrates. A multilayer substrate may be used (for example, refer to Patent Document 1).
JP-A-6-42983 (page 5, FIG. 1)

光電センサに内蔵される多層基板には、例えば投光素子、受光素子、表示用LED並びにこれらの素子を制御し物体の有無を検知する機能を有する汎用IC等が実装されている。そして、投光素子、受光素子、表示用LED等の光素子は、互いの光が干渉しないように多層基板の一側面に互いに隔たって形成された凹み部内にそれぞれ収容され、これらの各光素子が光アイソレートされている。また、これらの光素子は、多層基板の回路パターンにワイヤボンディングされ、投光素子及び受光素子が互いに機能するようにかつ表示用LEDが外部から認識可能なようにこれらの光素子及びそれに接続されたボンディングワイヤは例えば透明のエポキシ樹脂で覆われている。   For example, a light emitting element, a light receiving element, a display LED, and a general-purpose IC having a function of detecting the presence or absence of an object by controlling these elements are mounted on the multilayer substrate built in the photoelectric sensor. Optical elements such as a light projecting element, a light receiving element, and a display LED are respectively housed in recesses formed on one side surface of the multilayer substrate so as not to interfere with each other. Are optically isolated. Also, these optical elements are wire-bonded to the circuit pattern of the multilayer substrate, and are connected to these optical elements and the LED so that the light projecting element and the light receiving element can function with each other and the display LED can be recognized from the outside. The bonding wire is covered with, for example, a transparent epoxy resin.

一方、これらの素子とは別の汎用ICは、例えばシリコンを母材とするものが多く、光に反応して誤動作を生じるおそれがあるので、上述した光素子とは独立して多層基板の上面に凹み部を設けてこの凹み部に収容され、多層基板の回路パターンにワイヤボンディングされた後、光を透過しない例えば遮光性を有するエポキシ樹脂等で覆われる。   On the other hand, general-purpose ICs other than these elements are often based on silicon, for example, and may cause malfunctions in response to light. Therefore, the upper surface of the multilayer substrate is independent of the above-described optical elements. A recess portion is provided in the recess portion, accommodated in the recess portion, wire-bonded to the circuit pattern of the multilayer substrate, and then covered with, for example, a light-blocking epoxy resin that does not transmit light.

しかしながら、多層基板がこのような構成を有すると、それぞれの光素子の収容用凹み部に加えて、汎用ICの収容用凹み部を別個に設けなければならないので、多層基板自体が大型化してしまい、ひいてはこれを内蔵する光電センサ全体も大型化してしまう。   However, if the multilayer substrate has such a configuration, in addition to the recesses for accommodating each optical element, it is necessary to separately provide the recesses for accommodating general-purpose ICs. As a result, the entire photoelectric sensor incorporating the same is also enlarged.

本発明の目的は、実装密度が高い多層基板を内部に備えた小型で信頼性の高い光電センサを提供することにある。   An object of the present invention is to provide a small and highly reliable photoelectric sensor provided with a multilayer substrate having a high mounting density.

上述した課題を解決するために、本発明に係る光電センサは、
光素子と汎用ICとが同一側の面に実装された多層基板を備えた光電センサであって、
前記多層基板の同一側の面には、前記光素子と汎用ICを共に収容する共通凹み部が形成されると共に、当該共通凹み部の底面の一部に更なる凹み部が形成され、
前記汎用ICが前記更なる凹み部に収容されると共に、前記光素子が前記共通凹み部の更なる凹み部以外の底面に配置され、
前記汎用ICの上面全体は遮光性の樹脂で覆われ、かつ前記共通凹み部には光透過性の樹脂が少なくとも前記光素子の上面を覆った状態で充填されている
ことを特徴としている。
In order to solve the above-described problems, the photoelectric sensor according to the present invention is:
A photoelectric sensor including a multilayer substrate in which an optical element and a general-purpose IC are mounted on the same side,
On the same side surface of the multi-layer substrate, a common dent portion that accommodates both the optical element and the general-purpose IC is formed, and a further dent portion is formed on a part of the bottom surface of the common dent portion,
The general-purpose IC is accommodated in the further recessed portion, and the optical element is disposed on the bottom surface of the common recessed portion other than the further recessed portion,
The entire upper surface of the general-purpose IC is covered with a light-shielding resin, and the common recess is filled with a light-transmitting resin so as to cover at least the upper surface of the optical element.

本発明に係る光電センサがこのような構造の多層基板を有することで、共通凹み部の底面に汎用IC収容用の更なる凹み部を設けた二段構成となり、この更なる凹み部に汎用ICを配置してこの汎用ICの上面全体を遮光性の樹脂で覆うことによって汎用ICが光から悪影響を受けることがなくなる。また、この汎用ICの収容部よりも上段の共通凹み部の底部に光素子が配置され、その光素子の上面を透過性の樹脂で全体的に覆っているので、光素子の機能を損なうことがない。   The photoelectric sensor according to the present invention includes the multilayer substrate having such a structure, so that a two-stage configuration is provided in which a further concave portion for accommodating a general-purpose IC is provided on the bottom surface of the common concave portion. The general-purpose IC is not adversely affected by light by covering the entire upper surface of the general-purpose IC with a light-shielding resin. In addition, since the optical element is disposed at the bottom of the common concave portion above the housing portion of the general-purpose IC and the upper surface of the optical element is entirely covered with a transparent resin, the function of the optical element is impaired. There is no.

そして、このように光を発したり受光したりする機能を有する光素子と、光に対して悪影響を受けないようにしなければならない汎用ICとを共通する凹み部に収容することによって、多層基板に光素子とは別に汎用IC用の収容用の凹み部を設ける必要がなくなり、多層基板全体の小型化、ひいては光電センサの小型化を達成することができるようになる。   In this way, the optical element having the function of emitting and receiving light and the general-purpose IC that should not be adversely affected by the light are accommodated in a common recess, thereby allowing the multilayer substrate to There is no need to provide a recess for accommodating a general-purpose IC separately from the optical element, and the entire multilayer substrate can be reduced in size, and thus the photoelectric sensor can be reduced in size.

また、本発明の請求項2に記載の光電センサは、請求項1に記載の光電センサにおいて、
前記光素子は、投光素子、受光素子、表示用LEDの何れか一つからなることを特徴としている。
Moreover, the photoelectric sensor according to claim 2 of the present invention is the photoelectric sensor according to claim 1,
The optical element comprises any one of a light projecting element, a light receiving element, and a display LED.

多層基板の同一側の面に備わった光素子が、投光素子、受光素子、表示用LEDの何れか一つであっても、多層基板の同一側の面に光素子収容用凹み部と汎用IC収容用凹み部とを個別に形成する必要がなくなるので、従来では達成し難かった多層基板全体の小型化、ひいては光電センサの小型化を達成することができるようになる。   Even if the optical element provided on the same side of the multilayer substrate is any one of a light projecting element, a light receiving element, and a display LED, the optical element accommodating recess and the general purpose are provided on the same side of the multilayer substrate. Since there is no need to separately form the IC accommodating recess, it is possible to achieve a reduction in the size of the entire multilayer board, which has been difficult to achieve in the past, and a reduction in the size of the photoelectric sensor.

また、本発明の請求項3に記載の光電センサは、請求項1に記載の光電センサにおいて、
前記光素子は、投光素子、受光素子、表示用LEDの少なくとも二つからなり、当該光素子の何れか一つと前記汎用ICとが前記共通凹み部に共に収容されると共に、それ以外の光素子は前記多層基板の同一側の面に個別に形成された凹み部にそれぞれ収容され、かつ前記それ以外の光素子の上面は光透過性の樹脂で覆われていることを特徴としている。
Moreover, the photoelectric sensor according to claim 3 of the present invention is the photoelectric sensor according to claim 1,
The optical element includes at least two of a light projecting element, a light receiving element, and a display LED, and one of the optical elements and the general-purpose IC are housed together in the common recess, and the other light The elements are respectively housed in recesses formed individually on the same surface of the multilayer substrate, and the upper surfaces of the other optical elements are covered with a light-transmitting resin.

本発明に係る光電センサがこのような構造の多層基板を有することで、投光素子、受光素子、表示用LEDの少なくとも二つのそれぞれが多層基板の同一側の面に個別に形成された凹み部に収容されるようになり、これによって、各光素子の光アイソレートを図ると共に、この何れかの光素子と汎用ICとを一つの共通凹み部に収容することで、多層基板全体の集積度を上げて小型化を図ることができ、結果的に信頼性の高い小型の光電センサとすることができる。   The photoelectric sensor according to the present invention includes the multilayer substrate having such a structure, so that at least two of the light projecting element, the light receiving element, and the display LED are individually formed on the same side surface of the multilayer substrate. As a result, each optical element is optically isolated, and any one of the optical elements and the general-purpose IC are accommodated in one common recess, thereby integrating the entire multilayer substrate. Can be reduced in size, and as a result, a highly reliable small photoelectric sensor can be obtained.

本発明によると、実装密度の高い多層基板を内部に備えた小型で信頼性の高い光電センサを提供することができる。   According to the present invention, it is possible to provide a small and highly reliable photoelectric sensor provided with a multilayer substrate having a high mounting density.

以下、本発明の一実施形態に係る光電センサ1について説明する。本発明の一実施形態に係る光電センサ1は、図1に示すように、互いに嵌め合って直方体形状をなす半割り型の二つのケース10(11,12)と、ケース10の前面に備わったレンズユニット20と、レンズユニット20の背面に配置された多層基板100と、ケース外部に導出し多層基板100に電気的に接続されたケーブル30と、ケース10の一部を覆うプラグ15とを備えている。ケース10は例えばABS樹脂(アクリルニトリル・プタジエン・スチレン樹脂)などの強度と成型性に優れた材質でできており、図示しないネジ等で互いに一体化して直方体形状をなしている。   Hereinafter, a photoelectric sensor 1 according to an embodiment of the present invention will be described. As shown in FIG. 1, the photoelectric sensor 1 according to an embodiment of the present invention is provided in two halved cases 10 (11, 12) that are fitted to each other to form a rectangular parallelepiped shape, and on the front surface of the case 10. The lens unit 20, a multilayer substrate 100 disposed on the back surface of the lens unit 20, a cable 30 led out of the case and electrically connected to the multilayer substrate 100, and a plug 15 covering a part of the case 10. ing. The case 10 is made of a material having excellent strength and moldability, such as ABS resin (acrylonitrile, butadiene, styrene resin), and is formed into a rectangular parallelepiped shape by being integrated with each other with screws (not shown).

レンズユニット20は、投光レンズ21と受光レンズ22とを有し、図2に示す多層基板100に備わった投光素子111からの検出光を光電センサ1の外部に投光レンズ21を介して投光すると共に、投光素子111から投光された検出光が物体を介して反射して戻ってきたときにレンズユニット20の受光レンズ22を介して多層基板100の受光素子131に受光させるようになっている。   The lens unit 20 includes a light projecting lens 21 and a light receiving lens 22, and detects light from the light projecting element 111 provided in the multilayer substrate 100 shown in FIG. 2 via the light projecting lens 21 to the outside of the photoelectric sensor 1. In addition to projecting light, when the detection light projected from the light projecting element 111 is reflected back through the object, it is received by the light receiving element 131 of the multilayer substrate 100 via the light receiving lens 22 of the lens unit 20. It has become.

多層基板100は、本実施形態の場合、図3に示すように、例えば薄いセラミックでできた層を重ね合わせた多層構造を有し、図2に示すようにその一側面100aに投光素子収容用凹み部110と、表示用LED収容用凹み部120と、これ以外の受光素子131及び汎用IC141,151〜153を収容する共通凹み部130がそれぞれ独立して(光アイソレートして)形成されている。   In the case of this embodiment, the multilayer substrate 100 has a multilayer structure in which, for example, layers made of thin ceramics are stacked as shown in FIG. 3, and the light projecting element is accommodated on one side surface 100a thereof as shown in FIG. The recessed portion 110 for receiving, the recessed portion 120 for accommodating the display LED, and the other recessed portion 130 for housing the other light receiving elements 131 and the general-purpose ICs 141 and 151 to 153 are formed independently (by optical isolation). ing.

なお、上述した多層基板100はセラミック基板の多層構造である代わりに、ガラスエポキシ樹脂からなるプリント基板の多層構造であっても良い。   The multilayer substrate 100 described above may have a multilayer structure of a printed board made of glass epoxy resin instead of the multilayer structure of a ceramic substrate.

また、多層基板100の各層にはここでは図示しない回路パターンが適所に形成され、ここでは図示しないスルーホールやインナービアホールなどのバイアホールを介して多層基板内部に立体的な回路パターンを形成している。また、多層基板100の一側面100aには、投光素子側の縁部の近傍に3つの端子101,102,103が形成され、上述したケーブル30と電気的に接続するようになっている。また、端子103の近傍及びこれと多層基板100の一側面100aの対角線方向反対側には位置決め用穴105,106が形成され、この位置決め用穴105,106を介して多層基板100がレンズユニット20と光学的に適切な相対位置関係を保ったまま固定されるようになっている。   In addition, a circuit pattern (not shown) is formed at appropriate positions on each layer of the multilayer substrate 100, and a three-dimensional circuit pattern is formed inside the multilayer substrate via via holes (not shown) such as through holes and inner via holes. Yes. In addition, on one side surface 100a of the multilayer substrate 100, three terminals 101, 102, 103 are formed in the vicinity of the edge on the light projecting element side, and are electrically connected to the cable 30 described above. In addition, positioning holes 105 and 106 are formed in the vicinity of the terminal 103 and on the opposite side of the one side surface 100a of the multilayer substrate 100 in the diagonal direction, and the multilayer substrate 100 is attached to the lens unit 20 via the positioning holes 105 and 106. It is fixed while maintaining an optically appropriate relative positional relationship.

一方、多層基板100の他側面100b(図3参照)には、ここでは詳細に示さない回路パターンが形成され、各回路パターンの適所にコンデンサや抵抗、ダイオードなどの多数の受動素子(図示せず)が表面実装技術(SMT)により実装されている。また、他側面100bの一方の端子には、感度調整用ボリューム109が実装されている(図1参照)。   On the other hand, a circuit pattern not shown in detail here is formed on the other side surface 100b (see FIG. 3) of the multilayer substrate 100, and a large number of passive elements (not shown) such as capacitors, resistors, and diodes are provided at appropriate positions of each circuit pattern. ) Is mounted by surface mounting technology (SMT). Also, a sensitivity adjustment volume 109 is mounted on one terminal of the other side surface 100b (see FIG. 1).

投光素子111は、図3に示すように投光素子収容用凹み部110の底面に配置され、ボンディングワイヤ112によって多層基板100の回路パターンの適所に電気的に接続されている。そして、これら投光素子111とボンディングワイヤ112とは、透光性に優れた例えば透明のエポキシ樹脂からなる樹脂部113が投光素子収容用凹み部110に充填されている。また、投光素子収容用凹み部110と反対側の多層基板100の端部近傍には、上述の通り表示用LED収容用凹み部120が形成され、この凹み部120の底面に表示用LED121が配置されると共にボンディングワイヤ122によって表示用LED121と回路パターン(図示せず)とが電気的に接続されている。また、表示用LED収容用凹み部120には、表示用LED121及びボンディングワイヤ122を覆うように透光性に優れた例えば透明のエポキシ樹脂からなる樹脂部123が表示用LED収容用凹み部120に充填されている。   As shown in FIG. 3, the light projecting element 111 is disposed on the bottom surface of the light projecting element housing recess 110, and is electrically connected to an appropriate position of the circuit pattern of the multilayer substrate 100 by a bonding wire 112. The light projecting element 111 and the bonding wire 112 are filled in the light projecting element housing recess 110 with a resin part 113 made of, for example, a transparent epoxy resin having excellent translucency. In addition, the display LED accommodating recess 120 is formed in the vicinity of the end of the multilayer substrate 100 opposite to the light projecting element accommodating recess 110 as described above, and the display LED 121 is formed on the bottom surface of the recess 120. The LED 121 for display and a circuit pattern (not shown) are electrically connected by the bonding wire 122 while being disposed. In addition, in the display LED housing recess 120, a resin portion 123 made of, for example, a transparent epoxy resin having excellent translucency so as to cover the display LED 121 and the bonding wire 122 is formed in the display LED housing recess 120. Filled.

多層基板100の一側面100aにおいて投光素子収容用凹み部110と表示用LED収容用凹み部120の間には、図2及び図4に詳細に示すように受光素子131と汎用IC141,151〜153を共に収容する共通凹み部130が形成されている。この共通凹み部130は、その底面の一部に更なる凹み部140,150(図2参照)を備えると共に、共通凹み部130の更なる凹み部以外の底面130a(図4参照)には受光素子131が配置され、ボンディングワイヤ132(図2参照)を介して多層基板100の回路パターンに電気的に接続されている。また、共通凹み部130の底面130aの一部に形成された更なる凹み部140には汎用IC141が配置されると共に、更なる凹み部140に隣接して共通凹み部130の底面に形成された更なる凹み部150にも汎用IC151〜153が配置されている。これらの汎用ICは、本実施形態の場合、光電センサ1の機能を達成するためのカスタムICからなる第1の汎用IC141と、トランジスタやダイオードが実装された第2の汎用IC151〜153からなる。これらの汎用IC141,151〜153もボンディングワイヤ144,154を介して多層基板100の回路パターンに電気的に接続されている。そして、更なる凹み部140,150に収容された汎用IC141,151〜153の周囲及び上面、並びにボンディングワイヤ144,154は、遮光性を有した黒色の樹脂部145,155で覆われている(実際の外観に近い状態を示した図5参照)。   As shown in detail in FIGS. 2 and 4, the light receiving element 131 and the general-purpose ICs 141, 151-1 are disposed between the light projecting element housing recess 110 and the display LED housing recess 120 on one side surface 100 a of the multilayer substrate 100. A common recess 130 that accommodates 153 is formed. The common recess 130 is provided with further recesses 140 and 150 (see FIG. 2) on a part of the bottom surface thereof, and the bottom surface 130a (see FIG. 4) other than the further recess of the common recess 130 receives light. The element 131 is disposed and is electrically connected to the circuit pattern of the multilayer substrate 100 via bonding wires 132 (see FIG. 2). Further, the general-purpose IC 141 is disposed in the further recessed portion 140 formed in a part of the bottom surface 130 a of the common recessed portion 130, and is formed on the bottom surface of the common recessed portion 130 adjacent to the further recessed portion 140. The general-purpose ICs 151 to 153 are also arranged in the further recess 150. In the case of this embodiment, these general-purpose ICs include a first general-purpose IC 141 that is a custom IC for achieving the function of the photoelectric sensor 1 and second general-purpose ICs 151 to 153 on which transistors and diodes are mounted. These general-purpose ICs 141 and 151 to 153 are also electrically connected to the circuit pattern of the multilayer substrate 100 through bonding wires 144 and 154. And the circumference | surroundings and upper surface of general purpose IC141,151-153 accommodated in the further recessed parts 140 and 150, and the bonding wires 144 and 154 are covered with the black resin parts 145 and 155 which have light-shielding property ( FIG. 5 shows a state close to the actual appearance).

なお、この場合、本実施形態では黒色の樹脂部145はフィラーを含有した黒色のエポキシ樹脂かこれと同等品を用いている。   In this case, in this embodiment, the black resin portion 145 uses a black epoxy resin containing a filler or an equivalent product.

なお、この遮光性の樹脂部145,155の上面は、図4に示すように、汎用IC141よりも一段上部に配置された受光素子131の上面(受光面)を覆うことなく、受光素子131の光検出特性を損なわないようになっている。そして、この共通凹み部130には、受光素子131の上面を含めた周囲全体及び上述した汎用IC141,151〜153及び受光素子131に接続したボンディングワイヤ144,154並びに遮光性の黒色の樹脂部145,155を全て覆うように透光性を有する例えば透明のエポキシ樹脂135が充填されている。即ち、遮光性の樹脂部145の上層に透光性の樹脂部135が積層された二層構造をなしている。   Note that the upper surfaces of the light-shielding resin portions 145 and 155 do not cover the upper surface (light-receiving surface) of the light-receiving element 131 arranged one step above the general-purpose IC 141, as shown in FIG. The light detection characteristics are not impaired. The common recess 130 includes the entire periphery including the upper surface of the light receiving element 131, the above-described general-purpose ICs 141, 151 to 153, the bonding wires 144 and 154 connected to the light receiving element 131, and the light-shielding black resin portion 145. , 155 is filled with, for example, a transparent epoxy resin 135 having translucency. That is, it has a two-layer structure in which a light-transmitting resin portion 135 is laminated on an upper layer of the light-blocking resin portion 145.

なお、この樹脂部135は、共通凹み部130の上面近くまで充填されているが、必ずしもこの上面と面一になる必要はなく、上述した各構成要素を覆う程度に充填されていれば十分である。また、上面を超えて充填されていても良い。   The resin portion 135 is filled up to the upper surface of the common recess portion 130, but does not necessarily need to be flush with the upper surface. It is sufficient if the resin portion 135 is filled to cover the above-described components. is there. Moreover, it may be filled beyond the upper surface.

本発明の上述の実施形態に係る光電センサ1の多層基板100がこのような構造、即ちこの共通凹み部130の底面に汎用IC収容用の更なる凹み部140,150を設けた二段構成とし、かつこの更なる凹み部140,150に汎用IC141,151〜153をそれぞれ配置して汎用IC141,151〜153を遮光性の例えば黒色樹脂で覆うことによって汎用IC141,151〜153が光から悪影響を受けることがなくなる。また、この汎用IC収容用の更なる凹み部140,150よりも上側に位置する共通凹み部130の底面130aに受光素子131を配置し、その受光素子131とこれに接続されたボンディングワイヤ132とを透光性の透明の樹脂からなる樹脂部135で黒色の樹脂部145の上面も含めて全体的に覆っているので、受光素子131が光を受光するのを妨げることがない。   The multilayer substrate 100 of the photoelectric sensor 1 according to the above-described embodiment of the present invention has such a structure, that is, a two-stage configuration in which further concave portions 140 and 150 for accommodating general-purpose ICs are provided on the bottom surface of the common concave portion 130. In addition, the general-purpose ICs 141 and 151 to 153 are disposed in the further recessed portions 140 and 150, respectively, and the general-purpose ICs 141 and 151 to 153 are covered with a light-shielding black resin, for example, so that the general-purpose ICs 141 and 151 to 153 are adversely affected by light. You will not receive it. In addition, a light receiving element 131 is arranged on the bottom surface 130a of the common recessed portion 130 located above the further recessed portions 140 and 150 for accommodating the general-purpose IC, and the light receiving element 131 and the bonding wire 132 connected thereto are provided. Is entirely covered with the resin portion 135 made of a translucent transparent resin, including the upper surface of the black resin portion 145, so that the light receiving element 131 is not prevented from receiving light.

また、本発明の光電センサ1によると、光に対して反応する必要のある受光素子131と光に対して反応させないようにしなければならない汎用IC141,151〜153とを同一の収容部内に共に収容することができるので、光電センサ1に収容された多層基板100の集積化に貢献することができ、多層基板100の小型化を図り、ひいては光電センサ1の小型化を達成することができる。   Further, according to the photoelectric sensor 1 of the present invention, the light receiving element 131 that needs to react to light and the general-purpose ICs 141 and 151 to 153 that should not react to light are housed together in the same housing portion. Therefore, it is possible to contribute to the integration of the multilayer substrate 100 accommodated in the photoelectric sensor 1, to reduce the size of the multilayer substrate 100, and to achieve the size reduction of the photoelectric sensor 1.

また、本実施形態における光素子である投光素子111、受光素子131、表示用LED121は、それぞれ多層基板100の同一側の面に個別に形成された各凹み部110,130,120に収容されているので、それぞれが光アイソレートされ干渉し合うことはない。そのため、本実施形態に係る光電センサの信頼性を高めることができる。   In addition, the light projecting element 111, the light receiving element 131, and the display LED 121, which are optical elements in the present embodiment, are accommodated in the respective recessed portions 110, 130, and 120 individually formed on the same side surface of the multilayer substrate 100. Therefore, they are optically isolated and do not interfere with each other. Therefore, the reliability of the photoelectric sensor according to this embodiment can be improved.

なお、上述の実施形態における汎用ICのボンディングワイヤは、汎用ICの上面を覆う遮光性の樹脂で覆われていても良く、これより上層の透光性の樹脂で覆われていても良い。   In addition, the bonding wire of the general-purpose IC in the above-described embodiment may be covered with a light-shielding resin that covers the upper surface of the general-purpose IC, or may be covered with a light-transmitting resin in an upper layer.

また、遮光性を有する樹脂は、上述の実施形態のように黒色の樹脂に限定されず、実質的に遮光性を有していれば茶色の樹脂等様々な樹脂を使用可能である。   Further, the light-shielding resin is not limited to the black resin as in the above-described embodiment, and various resins such as a brown resin can be used as long as they have substantially light-shielding properties.

また、上述の実施形態では、光素子として、投光素子、受光素子、表示用LEDを挙げたが、これら以外の光素子も本発明には適用可能であることは言うまでもない。   In the above-described embodiment, the light projecting element, the light receiving element, and the display LED are exemplified as the optical element. However, it goes without saying that other optical elements are also applicable to the present invention.

また、上述した実施形態のように汎用ICと受光素子を上述した共通凹み部に収容するのではなく、汎用ICと他の光素子(投光素子又は表示用LEDの何れか一方)を共通凹み部に収容しても良い。この場合においても、残りの各光素子を個別の収容用凹み部に収容して光アイソレートすることで、多層基板の集積密度を高め、小型化を図ると共に上述の実施形態と同様に各光素子が干渉することがなく、小型で信頼性の高い光電センサとすることができる。   In addition, the general-purpose IC and the light receiving element are not housed in the above-described common recess as in the above-described embodiment, but the general-purpose IC and another optical element (either the light projecting element or the display LED) are commonly recessed. You may accommodate in a part. Also in this case, each remaining optical element is housed in a separate housing recess and is optically isolated, thereby increasing the integration density of the multilayer substrate, reducing the size, and reducing each light similarly to the above-described embodiment. There is no interference between the elements, and the photoelectric sensor can be small and highly reliable.

また、上述した実施形態とは異なり、多層基板に備わった光素子が、投光素子、受光素子、表示用LEDの何れか二つからなり、これら光素子の何れか一つと汎用ICとが共通凹み部に共に収容されると共に、それ以外の光素子は多層基板の同一側の面に個別に形成された凹み部に収容され、かつそれ以外の光素子の上面は光透過性の樹脂で覆われていても本発明の作用効果を当然に発揮し得る。   Unlike the above-described embodiment, the optical element provided in the multilayer substrate is composed of any two of a light projecting element, a light receiving element, and a display LED, and any one of these optical elements is shared with a general-purpose IC. The optical elements are accommodated together in the recesses, and the other optical elements are accommodated in the recesses individually formed on the same side surface of the multilayer substrate, and the upper surfaces of the other optical elements are covered with a light-transmitting resin. Even if it is known, the effects of the present invention can naturally be exhibited.

また、多層基板の同一側の面に備わった光素子が、投光素子、受光素子、表示用LEDの何れか一つだけであっても、従来のように多層基板の同一側の面に光素子収容用凹み部と汎用IC収容用凹み部とを個別に形成する必要がなくなるので、多層基板の小型化を図ることができ、本発明の作用効果を発揮し得る。   Further, even if the optical element provided on the same side surface of the multilayer substrate is only one of the light projecting device, the light receiving device, and the display LED, the light is applied to the same side surface of the multilayer substrate as in the prior art. Since there is no need to separately form the element housing recess and the general-purpose IC housing recess, the multilayer substrate can be reduced in size and the effects of the present invention can be exhibited.

本発明の一実施形態に係る光電センサの分解斜視図である。It is a disassembled perspective view of the photoelectric sensor which concerns on one Embodiment of this invention. 図1に示した光電センサの多層基板の平面図である。It is a top view of the multilayer substrate of the photoelectric sensor shown in FIG. 図2に示した多層基板の側方断面図である。FIG. 3 is a side sectional view of the multilayer substrate shown in FIG. 2. 図3に示した断面図の共通凹み部を拡大して示した詳細断面図である。FIG. 4 is a detailed cross-sectional view showing an enlarged common recess portion of the cross-sectional view shown in FIG. 3. 図2に示した平面図を実際の態様に即して示した平面図である。It is the top view which showed the top view shown in FIG. 2 according to the actual aspect.

符号の説明Explanation of symbols

1 光電センサ
10(11,12) ケース
15 プラグ
20 レンズユニット
21 投光レンズ
22 受光レンズ
30 ケーブル
100 多層基板
100a 一側面
100b 他側面
101,102,103 端子
105,106 位置決め用穴
109 感度調整用ボリューム
110 投光素子収容用凹み部
111 投光素子
112 ボンディングワイヤ
113 樹脂部
120 表示用LED収容用凹み部
121 表示用LED
122 ボンディングワイヤ
123 樹脂部
130 共通凹み部
130a 底面
131 受光素子
132 ボンディングワイヤ
135 樹脂部
140 更なる凹み部
141 汎用IC
144 ボンディングワイヤ
145 樹脂部
150 更なる凹み部
151〜153 汎用IC
154 ボンディングワイヤ
155 樹脂部
DESCRIPTION OF SYMBOLS 1 Photoelectric sensor 10 (11, 12) Case 15 Plug 20 Lens unit 21 Emitting lens 22 Light receiving lens 30 Cable 100 Multilayer substrate 100a One side surface 100b Other side surface 101,102,103 Terminal 105,106 Positioning hole 109 Sensitivity adjustment volume 110 Light Emitting Element Receiving Recess 111 Light Emitting Element 112 Bonding Wire 113 Resin Part 120 Display LED Receiving Recess 121 Display LED
122 Bonding wire 123 Resin portion 130 Common recess portion 130a Bottom surface 131 Light receiving element 132 Bonding wire 135 Resin portion 140 Further recess portion 141 General-purpose IC
144 Bonding wire 145 Resin part 150 Further recessed part 151-153 General purpose IC
154 Bonding wire 155 Resin part

Claims (3)

光素子と汎用ICとが同一側の面に実装された多層基板を備えた光電センサであって、
前記多層基板の同一側の面には、前記光素子と汎用ICを共に収容する共通凹み部が形成されると共に、当該共通凹み部の底面の一部に更なる凹み部が形成され、
前記汎用ICが前記更なる凹み部に収容されると共に、前記光素子が前記共通凹み部の更なる凹み部以外の底面に配置され、
前記汎用ICの上面全体は遮光性の樹脂で覆われ、かつ前記共通凹み部には光透過性の樹脂が少なくとも前記光素子の上面を覆った状態で充填されていることを特徴とする光電センサ。
A photoelectric sensor including a multilayer substrate in which an optical element and a general-purpose IC are mounted on the same side,
On the same side surface of the multi-layer substrate, a common dent portion that accommodates both the optical element and the general-purpose IC is formed, and a further dent portion is formed on a part of the bottom surface of the common dent portion,
The general-purpose IC is accommodated in the further recessed portion, and the optical element is disposed on the bottom surface of the common recessed portion other than the further recessed portion,
The entire upper surface of the general-purpose IC is covered with a light-shielding resin, and the common recess is filled with a light-transmitting resin so as to cover at least the upper surface of the optical element. .
前記光素子は、投光素子、受光素子、表示用LEDの何れか一つからなることを特徴とする、請求項1に記載の光電センサ。   The photoelectric sensor according to claim 1, wherein the optical element is one of a light projecting element, a light receiving element, and a display LED. 前記光素子は、投光素子、受光素子、表示用LEDの少なくとも二つからなり、当該光素子の何れか一つと前記汎用ICとが前記共通凹み部に共に収容されると共に、それ以外の光素子は前記多層基板の同一側の面に個別に形成された凹み部にそれぞれ収容され、かつ前記それ以外の光素子の上面は光透過性の樹脂で覆われていることを特徴とする、請求項1に記載の光電センサ。

The optical element includes at least two of a light projecting element, a light receiving element, and a display LED, and one of the optical elements and the general-purpose IC are housed together in the common recess, and the other light The elements are respectively housed in recesses formed individually on the same surface of the multilayer substrate, and the upper surfaces of the other optical elements are covered with a light-transmitting resin. Item 2. The photoelectric sensor according to Item 1.

JP2007142596A 2007-05-29 2007-05-29 Photoelectric sensor Pending JP2008298485A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3540473A1 (en) * 2018-03-15 2019-09-18 OMRON Corporation Photoelectric sensor
JP7431979B2 (en) 2019-12-26 2024-02-15 アー・エム・エス・インターナショナル・アクチェンゲゼルシャフト sensing system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3540473A1 (en) * 2018-03-15 2019-09-18 OMRON Corporation Photoelectric sensor
CN110275215A (en) * 2018-03-15 2019-09-24 欧姆龙株式会社 Photoelectric sensor
US10707370B2 (en) 2018-03-15 2020-07-07 Omron Corporation Photoelectric sensor
JP7431979B2 (en) 2019-12-26 2024-02-15 アー・エム・エス・インターナショナル・アクチェンゲゼルシャフト sensing system

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