JP2008255099A - ナフタレン化合物及びこれを用いた有機発光素子 - Google Patents
ナフタレン化合物及びこれを用いた有機発光素子 Download PDFInfo
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- MWEKPLLMFXIZOC-UHFFFAOYSA-N OB(c(cc1)c(cc2)c3c1ccc1cccc2c31)O Chemical compound OB(c(cc1)c(cc2)c3c1ccc1cccc2c31)O MWEKPLLMFXIZOC-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
<例示化合物A−G−1の合成>
XX−1:780mg(1.84mmol)
トルエン:20mL
2N−炭酸セシウム水溶液:20mL
エタノール:10mL
テトラキストリフェニルフォスフィンパラジウム[0]:234mg(0.203mmol)
<例示化合物B−F−1の合成>
XX−3:4g(10.4mmol)
トルエン:30mL
2N−炭酸セシウム水溶液:30mL
エタノール:15mL
テトラキストリフェニルフォスフィンパラジウム[0]:620mg(0.54mmol)
また、この化合物のガラス転移温度は、167℃であった。
<例示化合物A−F−1の合成>
XX−17:3.4g(10.4mmol)
トルエン:30mL
2N−炭酸セシウム水溶液:30mL
エタノール:15mL
テトラキストリフェニルフォスフィンパラジウム[0]:620mg(0.54mmol)
図3に示す有機層が3層の有機発光素子を製造した。
ガラス基板(基板1)上に、陽極2として、酸化錫インジウム(ITO)を膜厚100nmでパターニングすることにより、ITO電極付透明基板を作製した。このITO電極付透明基板上に、有機化合物からなる層と陰極を抵抗加熱による真空蒸着にて連続製膜した。具体的には、まずホール輸送層5として、下記に示すHTL−1を膜厚25nmで蒸着した。次に発光層3として、ホストである例示化合物B−F−1とゲストである下記に示すGUEST−2を、GUEST−2の含有量が発光層全体の5重量%となるように共蒸着した。このとき発光層の膜厚を30nmとした。次に、電子輸送層6として、下記に示すBphen(同仁化学研究所製)を膜厚30nmで蒸着した。次に第一の金属電極層としてKFを膜厚1nmで蒸着した。最後に第二の金属電極層として、Alを膜厚130nmで蒸着した。KF膜及びAl膜は共に陰極4として機能する。
実施例4において、発光層3のゲストとして例示化合物A−G−1の代わりにGUEST−1を、電子輸送層6としてBPhenの代わりに例示化合物B−F−1を用いる以外は、実施例2と同様の方法により素子を作製した。
2 陽極
3 発光層
4 陰極
5 ホール輸送層
6 電子輸送層
7 ホール注入層
8 ホール/エキシトンブロッキング層
10,20,30,40,50,60 有機発光素子
Claims (8)
- 前記R1乃至R6が水素原子であることを特徴とする、請求項1に記載のナフタレン化合物。
- 前記Ar1がフルオランテニル基又はピレニル基であることを特徴とする、請求項1又は2に記載のナフタレン化合物。
- 陽極と陰極と、
該陽極と該陰極との間に挟持される有機化合物からなる層とから構成され、
該有機化合物からなる層のうち少なくとも一層が請求項1乃至3のいずれか1項に記載のナフタレン化合物を含有することを特徴とする、有機発光素子。 - 前記ナフタレン化合物を含有する層が発光層又は電子輸送層であることを特徴とする、請求項4に記載の有機発光素子。
- 前記発光層がホストとゲストとから構成されることを特徴とする、請求項5に記載の有機発光素子。
- 前記ホストが、前記ナフタレン化合物であることを特徴とする、請求項6に記載の有機発光素子。
- 前記有機発光素子が、前記陽極と前記陰極との間に電圧を印加することにより発光する電界発光素子であることを特徴とする、請求項4乃至7のいずれか1項に記載の有機発光素子。
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2009063833A1 (ja) * | 2007-11-15 | 2009-05-22 | Idemitsu Kosan Co., Ltd. | ベンゾクリセン誘導体及びそれを用いた有機エレクトロルミネッセンス素子 |
WO2010047403A1 (en) * | 2008-10-22 | 2010-04-29 | Canon Kabushiki Kaisha | Organic light-emitting device |
WO2010076878A1 (ja) * | 2009-01-05 | 2010-07-08 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子用材料及びそれを用いた有機エレクトロルミネッセンス素子 |
JPWO2009008343A1 (ja) * | 2007-07-07 | 2010-09-09 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子および有機エレクトロルミネッセンス素子用材料 |
JP2011006397A (ja) * | 2009-05-29 | 2011-01-13 | Chisso Corp | ジベンゾ[g,p]クリセン化合物、該化合物を含有する発光層用材料、およびこれを用いた有機電界発光素子 |
JP2011504492A (ja) * | 2007-11-22 | 2011-02-10 | グラセル・ディスプレイ・インコーポレーテッド | 高効率の青色電界発光化合物およびこれを使用する表示素子 |
WO2011030493A1 (en) * | 2009-09-14 | 2011-03-17 | Canon Kabushiki Kaisha | Novel pyrene compound and organic electroluminescent device including the same |
WO2011033978A1 (ja) * | 2009-09-17 | 2011-03-24 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
JP2011213649A (ja) * | 2010-03-31 | 2011-10-27 | Canon Inc | 新規ベンゾピレン化合物 |
JP2012515730A (ja) * | 2009-01-23 | 2012-07-12 | メルク パテント ゲーエムベーハー | エレクトロルミネセンスデバイスのための材料 |
WO2012134191A3 (ko) * | 2011-03-29 | 2013-01-10 | 대주전자재료 주식회사 | 나프탈렌 유도체, 이를 이용한 유기 재료, 및 이를 이용한 유기 전기발광 소자 |
JP2019096823A (ja) * | 2017-11-27 | 2019-06-20 | Jnc株式会社 | 有機電界発光素子 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4819655B2 (ja) * | 2006-04-27 | 2011-11-24 | キヤノン株式会社 | 4−アリールフルオレン化合物及びそれを用いた有機発光素子 |
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