JP2008243827A - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

Info

Publication number
JP2008243827A
JP2008243827A JP2008144962A JP2008144962A JP2008243827A JP 2008243827 A JP2008243827 A JP 2008243827A JP 2008144962 A JP2008144962 A JP 2008144962A JP 2008144962 A JP2008144962 A JP 2008144962A JP 2008243827 A JP2008243827 A JP 2008243827A
Authority
JP
Japan
Prior art keywords
microwave
wave plate
plate
plasma processing
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008144962A
Other languages
English (en)
Japanese (ja)
Inventor
Tadahiro Omi
忠弘 大見
Masaki Hirayama
昌樹 平山
Shigetoshi Sugawa
成利 須川
Tetsuya Goto
哲也 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2008144962A priority Critical patent/JP2008243827A/ja
Publication of JP2008243827A publication Critical patent/JP2008243827A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32211Means for coupling power to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2008144962A 2001-03-28 2008-06-02 プラズマ処理方法 Pending JP2008243827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008144962A JP2008243827A (ja) 2001-03-28 2008-06-02 プラズマ処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001094276 2001-03-28
JP2008144962A JP2008243827A (ja) 2001-03-28 2008-06-02 プラズマ処理方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001340995A Division JP4402860B2 (ja) 2001-03-28 2001-11-06 プラズマ処理装置

Publications (1)

Publication Number Publication Date
JP2008243827A true JP2008243827A (ja) 2008-10-09

Family

ID=32697393

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008144961A Pending JP2008235288A (ja) 2001-03-28 2008-06-02 プラズマ処理装置及び遅波板
JP2008144962A Pending JP2008243827A (ja) 2001-03-28 2008-06-02 プラズマ処理方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2008144961A Pending JP2008235288A (ja) 2001-03-28 2008-06-02 プラズマ処理装置及び遅波板

Country Status (2)

Country Link
JP (2) JP2008235288A (zh)
CN (1) CN100479109C (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010110080A1 (ja) * 2009-03-23 2010-09-30 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP2014154744A (ja) * 2013-02-12 2014-08-25 Hitachi High-Technologies Corp プラズマ処理装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101927918B1 (ko) * 2017-03-27 2018-12-11 세메스 주식회사 기판 처리 장치
DE102017121731A1 (de) * 2017-09-19 2019-03-21 Muegge Gmbh Vorrichtung zur Behandlung eines Produkts mit Mikrowellen
CN113923847B (zh) * 2021-10-22 2024-08-16 西南大学 一种同轴等离子体炬及低功率微波微等离子体激发装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629727A (ja) * 1992-05-21 1994-02-04 Ngk Insulators Ltd スロットアンテナおよびその製造方法
JPH0897629A (ja) * 1994-09-22 1996-04-12 Toppan Printing Co Ltd 平面アンテナおよびその製造方法
JPH0963793A (ja) * 1995-08-25 1997-03-07 Tokyo Electron Ltd プラズマ処理装置
JP2001203098A (ja) * 2000-01-18 2001-07-27 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286237A (ja) * 1999-03-30 2000-10-13 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629727A (ja) * 1992-05-21 1994-02-04 Ngk Insulators Ltd スロットアンテナおよびその製造方法
JPH0897629A (ja) * 1994-09-22 1996-04-12 Toppan Printing Co Ltd 平面アンテナおよびその製造方法
JPH0963793A (ja) * 1995-08-25 1997-03-07 Tokyo Electron Ltd プラズマ処理装置
JP2001203098A (ja) * 2000-01-18 2001-07-27 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010110080A1 (ja) * 2009-03-23 2010-09-30 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
KR101256850B1 (ko) * 2009-03-23 2013-04-22 도쿄엘렉트론가부시키가이샤 마이크로파 플라즈마 처리 장치
JP2014154744A (ja) * 2013-02-12 2014-08-25 Hitachi High-Technologies Corp プラズマ処理装置

Also Published As

Publication number Publication date
CN100479109C (zh) 2009-04-15
CN1700427A (zh) 2005-11-23
JP2008235288A (ja) 2008-10-02

Similar Documents

Publication Publication Date Title
JP4402860B2 (ja) プラズマ処理装置
JP4012466B2 (ja) プラズマ処理装置
KR100270425B1 (ko) 플라스마처리장치
JP3384795B2 (ja) プラズマプロセス装置
US7097735B2 (en) Plasma processing device
US6727654B2 (en) Plasma processing apparatus
KR100501777B1 (ko) 플라즈마 처리 장치
WO2002080252A1 (fr) Dispositif de traitement au plasma
JP4540926B2 (ja) プラズマ処理装置
JP5522887B2 (ja) プラズマ処理装置
JP2008243827A (ja) プラズマ処理方法
KR101411171B1 (ko) 플라즈마 처리 장치
JPH10134995A (ja) プラズマ処理装置及びプラズマ処理方法
JP4113896B2 (ja) プラズマ処理装置
JPH09245993A (ja) プラズマ処理装置及びアンテナの製造方法
JP4113895B2 (ja) プラズマ処理装置
JP2008270839A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091208

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100406