JP2008232958A - Inspection tool and semiconductor device inspection method - Google Patents

Inspection tool and semiconductor device inspection method Download PDF

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JP2008232958A
JP2008232958A JP2007075697A JP2007075697A JP2008232958A JP 2008232958 A JP2008232958 A JP 2008232958A JP 2007075697 A JP2007075697 A JP 2007075697A JP 2007075697 A JP2007075697 A JP 2007075697A JP 2008232958 A JP2008232958 A JP 2008232958A
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semiconductor device
contact
heat
inspection
thermal conductivity
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Koji Akahori
浩二 赤堀
Tomohiko Kanemitsu
朋彦 金光
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an inspection tool that makes it less apt to have the heat from a semiconductor device escape to the outside through contacting an inspection tool from the external electrode of a semiconductor device, when conducting accurate inspection of temperature control. <P>SOLUTION: The periphery of the contact 105 in the inspection tool is surrounded by a substance 201 having thermal conductivity higher than that of the contact 105, and the periphery of the substance 201 having high thermal conductivity is surrounded by a heat-insulating substance (substance having low thermal conductivity) 202, thus preserving the temperature of the contact 105, preventing heat from the semiconductor device 101 from escaping to an inspection board 109 easily through the contact 105, and controlling the temperature accurately. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体デバイス検査治具および半導体デバイス検査方法に関し、半導体デバイスの各種測定を行なうために使用される検査治具および装着される半導体デバイスの温度制御を行なう技術に係るものである。   The present invention relates to a semiconductor device inspection jig and a semiconductor device inspection method, and relates to a technique for performing temperature control of an inspection jig used for performing various measurements of a semiconductor device and a semiconductor device to be mounted.

従来、半導体デバイスに温度を印加して検査する場合には、例えば図3に示すように、半導体デバイス101の上面側に配置する熱源装置(ヒーター装置)104と、半導体デバイス101の下面側に配置する検査治具(ソケット)100と、半導体デバイス101を測定する半導体デバイス検査装置(検査ボード109)とを用いる。   Conventionally, when inspecting by applying temperature to a semiconductor device, for example, as shown in FIG. 3, a heat source device (heater device) 104 disposed on the upper surface side of the semiconductor device 101 and a lower surface side of the semiconductor device 101 are disposed. An inspection jig (socket) 100 to be used and a semiconductor device inspection apparatus (inspection board 109) to measure the semiconductor device 101 are used.

検査治具100はソケット筐体108に複数の接触子105を有しており、接触子105が半導体デバイス101と半導体デバイス検査装置の検査ボード109とをコンタクトする。接触子105はソケット上面側の接触子端部106で半導体デバイス101の外部電極103とコンタクトし、ソケット下面側の接触子端部107で検査ボード109にコンタクトする。   The inspection jig 100 has a plurality of contacts 105 in a socket housing 108, and the contacts 105 contact the semiconductor device 101 and the inspection board 109 of the semiconductor device inspection apparatus. The contact 105 is in contact with the external electrode 103 of the semiconductor device 101 at the contact end portion 106 on the upper surface side of the socket, and is in contact with the inspection board 109 at the contact end portion 107 on the lower surface side of the socket.

この構成において、熱源装置(ヒーター装置)104は半導体デバイス101をその上面側から加熱しつつ温度制御を行う。熱源装置104により加熱される半導体デバイス101の上面の熱は、半導体デバイス101の上面部分から半導体デバイス101の樹脂部分102へ熱伝導する。この状態で検査ボード109により半導体デバイス101のチップ110の温度保証検査を行う。
特開2006−17738号公報
In this configuration, the heat source device (heater device) 104 performs temperature control while heating the semiconductor device 101 from the upper surface side. The heat of the upper surface of the semiconductor device 101 heated by the heat source device 104 is conducted from the upper surface portion of the semiconductor device 101 to the resin portion 102 of the semiconductor device 101. In this state, a temperature assurance inspection of the chip 110 of the semiconductor device 101 is performed by the inspection board 109.
JP 2006-17738 A

ところで、上述の温度保証検査において半導体デバイス101の動作特性を保証するためには、熱源装置(ヒーター装置)104で半導体デバイス101を加熱する際の半導体デバイス101の温度制御、特にチップ110の温度制御が重要である。しかし、チップ110は一般にパッケージとして樹脂部分102で封止して保護していることから熱伝導性があまり良くない。   By the way, in order to guarantee the operation characteristics of the semiconductor device 101 in the above-described temperature assurance inspection, the temperature control of the semiconductor device 101 when the semiconductor device 101 is heated by the heat source device (heater device) 104, particularly the temperature control of the chip 110. is important. However, since the chip 110 is generally sealed and protected by the resin portion 102 as a package, the thermal conductivity is not so good.

このため、熱源装置(ヒーター装置)104で加熱する場合に、半導体デバイス101には樹脂部分102の表面部分と樹脂部分102の内部にあるチップ110とで実際にはある程度の温度差がある。したがって、樹脂部分102の表面温度を測定しても、チップ110の温度を正確に測定することは困難である。   For this reason, when heated by the heat source device (heater device) 104, the semiconductor device 101 actually has a certain temperature difference between the surface portion of the resin portion 102 and the chip 110 inside the resin portion 102. Therefore, even if the surface temperature of the resin portion 102 is measured, it is difficult to accurately measure the temperature of the chip 110.

また、最近では半導体デバイス101の高機能化に伴って半導体デバイス101の外部電極103が多ピン化(500ピン以上)してきている。このため、樹脂部分102に加えた熱が多ピンの外部電極103を通してソケット100の接触子105に熱伝導し、熱が半導体デバイス検査装置の検査ボード109に逃げてしまうので、熱源装置(ヒーター装置)104 により樹脂部分102の温度調整を行っても、半導体デバイス内部のチップ110の温度を正確に調整することは困難である。   In recent years, the external electrodes 103 of the semiconductor device 101 have become multi-pin (500 pins or more) as the function of the semiconductor device 101 increases. For this reason, the heat applied to the resin portion 102 is conducted to the contact 105 of the socket 100 through the multi-pin external electrode 103, and the heat escapes to the inspection board 109 of the semiconductor device inspection apparatus. ) 104, even if the temperature of the resin portion 102 is adjusted, it is difficult to accurately adjust the temperature of the chip 110 inside the semiconductor device.

このような問題に対して、特許文献1に記載する半導体装置検査装置用ソケットでは、検査治具の接触子の部分に気体もしくは液体の通る通路を設け、その通路へ加熱された気体もしくは液体を送り込むことにより接触子を加熱することで、半導体デバイスの熱が逃げ難い構成にして温度制御を行なっている。   With respect to such a problem, in the socket for semiconductor device inspection apparatus described in Patent Document 1, a passage through which gas or liquid passes is provided in the contact portion of the inspection jig, and the heated gas or liquid is supplied to the passage. The contactor is heated by feeding, and the temperature control is performed so that the heat of the semiconductor device is difficult to escape.

しかしながら、この方法では、検査治具(ソケット)の接触子端部に熱を送り込むための装置を検査治具の外部から熱を付加する必要があり、装置構成が複雑となる。
本発明は、上記の課題を解決するものであり、検査治具の外部から熱を付加することなく、半導体デバイスに加えた熱を逃がさないように検査治具の接触子端部を保温して半導体デバイスの正確な温度制御が行える検査治具および検査手法を提供することを目的とする。
However, in this method, it is necessary to apply heat from the outside of the inspection jig to the apparatus for sending heat to the contact end portion of the inspection jig (socket), and the apparatus configuration becomes complicated.
The present invention solves the above-mentioned problems, and without keeping heat from the outside of the inspection jig, the contact end of the inspection jig is kept warm so as not to release the heat applied to the semiconductor device. An object of the present invention is to provide an inspection jig and an inspection method capable of accurately controlling the temperature of a semiconductor device.

上記の課題を解決するために、本発明の検査治具は、半導体デバイスに設けられた複数の電極と前記半導体デバイスを測定する装置に設けられた複数の電極とを繋ぐ複数の接触子を配置した検査治具において、前記接触子の周囲を前記接触子より熱伝導性の高い気体または液体または固体の少なくとも何れかの物質で満たし、前記物質の周囲を前記物質より断熱性の高い物質で囲むことを特徴とする。   In order to solve the above-described problems, the inspection jig of the present invention includes a plurality of contacts that connect a plurality of electrodes provided in a semiconductor device and a plurality of electrodes provided in an apparatus for measuring the semiconductor device. In the inspection jig, the periphery of the contact is filled with at least one of a gas, a liquid, or a solid having higher thermal conductivity than the contact, and the periphery of the material is surrounded by a material having a higher thermal insulation than the material. It is characterized by that.

また、前記接触子より熱伝導性の高い物質が絶縁物を介して前記接触子と接触するか、もしくは前記接触子より熱伝導性の高い物質自体が絶縁物であることを特徴とする。
また、前記接触子は、前記半導体デバイスと接触する電極表面部分と前記半導体デバイスを測定する装置と接触する電極表面部分とを除いて、前記熱伝導性の高い物質と接触する表面部分が絶縁処理されていることを特徴とする。
In addition, a material having higher thermal conductivity than the contact is in contact with the contact through an insulator, or a material having higher thermal conductivity than the contact is itself an insulator.
In addition, the contact portion has an insulating treatment on a surface portion in contact with the material having high thermal conductivity except for an electrode surface portion in contact with the semiconductor device and an electrode surface portion in contact with an apparatus for measuring the semiconductor device. It is characterized by being.

また、前記断熱性の高い物質で囲んだ内部に、前記熱伝導性の高い物質を加熱する内部熱源装置を設けたことを特徴とする。
本発明の半導体デバイス検査方法は、半導体デバイスの電極と前記半導体デバイスを測定する装置の電極とを接触子で接続して前記半導体デバイスを検査するものであって、前記半導体デバイスを熱源装置で加熱し、前記半導体デバイスから前記接触子に熱伝導する熱を、前記接触子の周囲に配置した前記接触子よりも熱伝導の高い物質で保温しつつ、前記半導体デバイスの温度制御を行なって前記半導体デバイスの検査を行うことを特徴とする。
In addition, an internal heat source device that heats the material having high heat conductivity is provided inside the material surrounded by the material having high heat insulation.
The semiconductor device inspection method of the present invention is to inspect the semiconductor device by connecting the electrode of the semiconductor device and the electrode of the apparatus for measuring the semiconductor device with a contact, and heating the semiconductor device with a heat source device The semiconductor device is controlled by controlling the temperature of the semiconductor device while keeping the heat conducted from the semiconductor device to the contact with a substance having higher heat conductivity than the contact disposed around the contact. The device is inspected.

以上のように本発明によれば、熱源装置(ヒーター装置)から半導体デバイスの上面に加える熱が半導体デバイスの複数の電極から検査治具の接触子を通して半導体デバイスの測定装置へ逃げることを抑制し、その逃げる熱量を減らせることができるので、熱源装置(ヒーター装置)の調整により半導体デバイスの温度を正確に制御することができ、検査治具に外部から熱を加えることなく、半導体デバイスのチップの温度を正確に調整することが可能となる。   As described above, according to the present invention, the heat applied from the heat source device (heater device) to the upper surface of the semiconductor device is prevented from escaping from the plurality of electrodes of the semiconductor device to the measuring device of the semiconductor device through the contact of the inspection jig. Since the amount of heat that escapes can be reduced, the temperature of the semiconductor device can be accurately controlled by adjusting the heat source device (heater device), and the chip of the semiconductor device can be obtained without applying heat to the inspection jig from the outside. It is possible to accurately adjust the temperature of the.

以下、本発明の実施の形態を示す検査治具および半導体デバイス検査方法について、図面を参照しながら具体的に説明する。
最初に、本発明の実施の形態1の検査治具の構成について図1を用いて説明する。図1は本実施の形態1の検査治具の断面図である。
(実施の形態1)
図1に示すように、検査治具(以下ソケットと呼ぶ)200は、半導体デバイス101と半導体デバイス101を測定する半導体デバイス検査装置の検査ボード109とをコンタクトする複数の接触子105をソケット筐体108に配置している。
Hereinafter, an inspection jig and a semiconductor device inspection method showing embodiments of the present invention will be specifically described with reference to the drawings.
First, the configuration of the inspection jig according to the first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a cross-sectional view of the inspection jig of the first embodiment.
(Embodiment 1)
As shown in FIG. 1, an inspection jig (hereinafter referred to as a socket) 200 includes a plurality of contacts 105 that contact a semiconductor device 101 and an inspection board 109 of a semiconductor device inspection apparatus that measures the semiconductor device 101 in a socket housing. 108.

接触子105は、ソケット上面側の接触子端部106が半導体デバイス101の外部電極103とコンタクトし、ソケット下面側の接触子端部107が検査ボード109にコンタクトする。   In the contact 105, the contact end portion 106 on the upper surface side of the socket contacts the external electrode 103 of the semiconductor device 101, and the contact end portion 107 on the lower surface side of the socket contacts the inspection board 109.

ソケット200にはソケット筐体108に熱伝導の高い物質201を設けており、この熱伝導の高い物質201がソケット200に配置した接触子105の周囲を囲って接触子105の表面に接触しており、熱伝導の高い物質201から接触子105へ熱が伝導する。   The socket 200 is provided with a material 201 having high heat conductivity in the socket casing 108, and the material 201 having high heat conductivity surrounds the contact 105 disposed on the socket 200 and contacts the surface of the contact 105. Therefore, heat is conducted from the material 201 having high thermal conductivity to the contact 105.

熱伝導の高い物質201は、接触子105および検査ボード109の材質よりも熱伝導率が高く、接触子105と接触する部分は絶縁してあり、接触子105の相互間での電気的ショートを防止している。また、熱伝導の高い物質201は、その物質状態として気体、液体、固体の何れでも良いが、接触子105とソケット筐体108の固定を確実に行うために固体が望ましい。さらに、熱伝導の高い物質201を絶縁物とすることも可能である。   The material 201 having a high thermal conductivity has a higher thermal conductivity than the material of the contact 105 and the inspection board 109, and the portion in contact with the contact 105 is insulated, so that an electrical short between the contacts 105 can be prevented. It is preventing. In addition, the material 201 having high heat conductivity may be any of gas, liquid, and solid as its material state, but a solid is desirable in order to securely fix the contact 105 and the socket housing 108. Further, the material 201 having high thermal conductivity can be an insulator.

一例として、接触子105と接触する部分の表面に絶縁メッキ(10×1016Ω以上の絶縁メッキ)を施した銅(Cu)等が良い。熱伝導の高い物質201の表面を絶縁しない場合には、接触子105に絶縁メッキ(10×1016Ω以上の絶縁メッキ)を施す。この絶縁メッキは、半導体デバイス101の外部電極103および半導体デバイス検査装置の検査ボード109にコンタクトする電極表面、つまり接触子端部106の上面部分、接触子端部107の下面部分を除いて施す。 As an example, copper (Cu) or the like that has been subjected to insulation plating (insulation plating of 10 × 10 16 Ω or more) on the surface of the portion that contacts the contact 105 is preferable. In the case where the surface of the material 201 having high thermal conductivity is not insulated, the contact 105 is subjected to insulation plating (insulation plating of 10 × 10 16 Ω or more). This insulation plating is performed except for the electrode surface that contacts the external electrode 103 of the semiconductor device 101 and the inspection board 109 of the semiconductor device inspection apparatus, that is, the upper surface portion of the contact end portion 106 and the lower surface portion of the contact end portion 107.

熱伝導の高い物質201はその外側を断熱物質202で覆っており、熱伝導の高い物質201へ接触子105から伝導する熱がソケット200の外部に逃げないように断熱物質202で保温する。この断熱物質202の特徴としては接触子105の周囲に設けた熱伝導の高い物質201の熱伝導率より低い物質とする。   The outer side of the material 201 having high heat conductivity is covered with a heat insulating material 202, and the heat is transferred from the contact 105 to the material 201 having high heat conductivity so as not to escape to the outside of the socket 200. The heat insulating material 202 is characterized by a material having a thermal conductivity lower than that of the material 201 having high thermal conductivity provided around the contact 105.

以下に、本実施の形態1のソケット200による半導体デバイスの検査手法を説明する。図1に示すように、まず半導体デバイス101の上面を熱源装置(ヒーター装置)104で加熱する。熱源装置(ヒーター装置)104から半導体デバイス101の上面に加える熱は、樹脂部分102を通して外部電極103に熱伝導し、外部電極103から接触子端部106を通して接触子105に熱伝導し、さらに接触子105から熱伝導の高い物質201へ熱伝導する。熱伝導の高い物質201は断熱物質202により外部から断熱されているので、接触子105から熱伝導の高い物質201へ熱伝導した熱は熱伝導の高い物質201に保たれる。   A semiconductor device inspection method using the socket 200 according to the first embodiment will be described below. As shown in FIG. 1, first, the upper surface of the semiconductor device 101 is heated by a heat source device (heater device) 104. The heat applied from the heat source device (heater device) 104 to the upper surface of the semiconductor device 101 is thermally conducted to the external electrode 103 through the resin portion 102, and is conducted from the external electrode 103 to the contact 105 through the contact end portion 106, and further contacted. Heat conduction from the child 105 to the material 201 having high heat conduction. Since the material 201 with high heat conductivity is thermally insulated from the outside by the heat insulating material 202, the heat conducted from the contact 105 to the material 201 with high heat conductivity is kept in the material 201 with high heat conductivity.

この熱を保った熱伝導の高い物質201により接触子105の周囲を保温することで、熱源装置(ヒーター装置)104から半導体デバイス101へ加えた熱が接触子105を通して検査ボード109へ逃げ難くなり、熱源装置(ヒーター装置)104の調整により半導体デバイス101の温度を正確に制御することができる。   By keeping the heat around the contact 105 with the highly heat-conductive material 201 that maintains this heat, the heat applied from the heat source device (heater device) 104 to the semiconductor device 101 does not easily escape to the inspection board 109 through the contact 105. The temperature of the semiconductor device 101 can be accurately controlled by adjusting the heat source device (heater device) 104.

次に、本発明の実施の形態2の検査治具の構成について図2を用いて説明する。図2は本実施の形態2の検査治具の断面図である。
(実施の形態2)
図2において、図1において説明したものと同様の構成要素には同符号を付して説明を省略する。
Next, the configuration of the inspection jig according to the second embodiment of the present invention will be described with reference to FIG. FIG. 2 is a cross-sectional view of the inspection jig of the second embodiment.
(Embodiment 2)
In FIG. 2, the same components as those described in FIG.

本実施の形態2における特徴は、ソケット300が内部熱源装置(ヒーター装置)301を有することにある。内部熱源装置(ヒーター装置)301はソケット筐体108の内部に配置し、熱伝導の高い物質201の表面部分へ熱を熱伝導し易い位置に取り付けており、本実施の形態2では熱伝導の高い物質201の外側に配置している。   The feature of the second embodiment is that the socket 300 has an internal heat source device (heater device) 301. The internal heat source device (heater device) 301 is disposed inside the socket housing 108 and is attached to a position where heat can be easily conducted to the surface portion of the material 201 having high heat conduction. Arranged outside the high substance 201.

熱伝導の高い物質201と内部熱源装置(ヒーター装置)301の周囲は断熱物質202で覆っており、接触子105から熱伝導の高い物質201へ熱伝導する熱および内部熱源装置(ヒーター装置)301から熱伝導の高い物質201へ熱伝導する熱がソケット300の外部に逃げないように断熱物質202で保温する。他の構成は先の図1と同様である。   The periphery of the material 201 with high heat conductivity and the internal heat source device (heater device) 301 is covered with a heat insulating material 202, and heat that conducts heat from the contact 105 to the material 201 with high heat conductivity and the internal heat source device (heater device) 301. The heat insulating material 202 is used to keep the heat conducted from the heat conducting material 201 to the highly heat conducting material 201 from escaping to the outside of the socket 300. Other configurations are the same as those in FIG.

以下に、本実施の形態2のソケット300による半導体デバイスの検査手法を説明する。図2に示すように、まず半導体デバイス101の上面を熱源装置(ヒーター装置)104で加熱する。熱源装置(ヒーター装置)104から半導体デバイス101の上面に加える熱は、樹脂部分102を通して外部電極103に熱伝導し、外部電極103から接触子端部106を通して接触子105に熱伝導し、さらに接触子105から熱伝導の高い物質201へ熱伝導する。   A semiconductor device inspection method using the socket 300 according to the second embodiment will be described below. As shown in FIG. 2, first, the upper surface of the semiconductor device 101 is heated by a heat source device (heater device) 104. The heat applied from the heat source device (heater device) 104 to the upper surface of the semiconductor device 101 is thermally conducted to the external electrode 103 through the resin portion 102, and is conducted from the external electrode 103 to the contact 105 through the contact end portion 106, and further contacted. Heat conduction from the child 105 to the material 201 having high heat conduction.

また、熱源装置(ヒーター装置)104による半導体デバイス101の加熱と同時に、熱伝導の高い物質201の表面部分に取り付けられた内部熱源装置(ヒーター装置)301により熱伝導の高い物質201を加熱する。   In addition, simultaneously with the heating of the semiconductor device 101 by the heat source device (heater device) 104, the material 201 having high heat conductivity is heated by the internal heat source device (heater device) 301 attached to the surface portion of the material 201 having high heat conductivity.

熱伝導の高い物質201は断熱物質202により外部から断熱されているので、接触子105から熱伝導の高い物質201へ熱伝導した熱、および内部熱源装置(ヒーター装置)301から加えた熱は熱伝導の高い物質201に保たれる。   Since the material 201 with high heat conductivity is thermally insulated from the outside by the heat insulating material 202, the heat conducted from the contact 105 to the material 201 with high heat conductivity and the heat applied from the internal heat source device (heater device) 301 are heat. The highly conductive material 201 is maintained.

この熱を保った熱伝導の高い物質201により接触子105の周囲を保温することで、熱源装置(ヒーター装置)104から半導体デバイス101へ加えた熱が接触子105を通して検査ボード109へ逃げ難くなり、熱源装置(ヒーター装置)104および内部熱源装置(ヒーター装置)301の調整により半導体デバイス101の温度を正確に制御することができる。   By keeping the heat around the contact 105 with the highly heat-conductive material 201 that maintains this heat, the heat applied from the heat source device (heater device) 104 to the semiconductor device 101 does not easily escape to the inspection board 109 through the contact 105. The temperature of the semiconductor device 101 can be accurately controlled by adjusting the heat source device (heater device) 104 and the internal heat source device (heater device) 301.

本発明の実施の形態1における検査治具を示す断面図Sectional drawing which shows the inspection jig in Embodiment 1 of this invention 本発明の他の実施の形態2における検査治具を示す断面図Sectional drawing which shows the inspection jig in other Embodiment 2 of this invention 従来の検査治具を示す断面図Sectional view showing a conventional inspection jig

符号の説明Explanation of symbols

100 検査治具(ソケット)
101 半導体デバイス
102 半導体デバイスの樹脂部分
103 半導体デバイスの外部電極
104 熱源装置(ヒーター装置)
105 接触子
106 接触子端部(半導体デバイスとの接触部分)
107 接触子端部(検査ボードとの接触部分)
108 ソケット筐体
109 検査ボード
110 チップ
201 熱伝導の高い物質(気体もしくは液体もしくは固体)
202 断熱物質
301 内部熱源装置(ヒーター装置)
100 Inspection jig (socket)
DESCRIPTION OF SYMBOLS 101 Semiconductor device 102 Resin part of semiconductor device 103 External electrode of semiconductor device 104 Heat source apparatus (heater apparatus)
105 Contact 106 Contact end (contact part with semiconductor device)
107 Contact end (contact part with inspection board)
108 Socket housing 109 Inspection board 110 Chip 201 Material with high thermal conductivity (gas, liquid or solid)
202 Thermal insulation material 301 Internal heat source device (heater device)

Claims (5)

半導体デバイスに設けられた複数の電極と前記半導体デバイスを測定する装置に設けられた複数の電極とを繋ぐ複数の接触子を配置した検査治具において、前記接触子の周囲を前記接触子より熱伝導性の高い気体または液体または固体の少なくとも何れかの物質で満たし、前記物質の周囲を前記物質より断熱性の高い物質で囲むことを特徴とする検査治具。 In an inspection jig in which a plurality of contacts connecting a plurality of electrodes provided in a semiconductor device and a plurality of electrodes provided in an apparatus for measuring the semiconductor device are arranged, the periphery of the contact is heated by the contact An inspection jig characterized by being filled with at least one of a highly conductive gas, liquid, or solid substance, and surrounding the substance with a substance having higher heat insulation than the substance. 前記接触子より熱伝導性の高い物質が絶縁物を介して前記接触子と接触するか、もしくは前記接触子より熱伝導性の高い物質自体が絶縁物であることを特徴とする請求項1記載の検査治具。 The material having higher thermal conductivity than the contact is in contact with the contact through an insulator, or the material having higher thermal conductivity than the contact is itself an insulator. Inspection jig. 前記接触子は、前記半導体デバイスと接触する電極表面部分と前記半導体デバイスを測定する装置と接触する電極表面部分とを除いて、前記熱伝導性の高い物質と接触する表面部分が絶縁処理されていることを特徴とする請求項1記載の検査治具。 In the contact, the surface portion in contact with the material having high thermal conductivity is insulated except for the electrode surface portion in contact with the semiconductor device and the electrode surface portion in contact with the apparatus for measuring the semiconductor device. The inspection jig according to claim 1, wherein: 前記断熱性の高い物質で囲んだ内部に、前記熱伝導性の高い物質を加熱する内部熱源装置を設けたことを特徴とする請求項1記載の検査治具。 The inspection jig according to claim 1, wherein an internal heat source device for heating the material having high thermal conductivity is provided inside the material surrounded by the material having high heat insulation. 半導体デバイスの電極と前記半導体デバイスを測定する装置の電極とを接触子で接続して前記半導体デバイスを検査するものであって、前記半導体デバイスを熱源装置で加熱し、前記半導体デバイスから前記接触子に熱伝導する熱を、前記接触子の周囲に配置した前記接触子よりも熱伝導の高い物質で保温しつつ、前記半導体デバイスの温度制御を行なって前記半導体デバイスの検査を行うことを特徴とする半導体デバイス検査方法。 Inspecting the semiconductor device by connecting an electrode of a semiconductor device and an electrode of an apparatus for measuring the semiconductor device with a contact, the semiconductor device being heated with a heat source device, and the contact from the semiconductor device to the contact The semiconductor device is inspected by controlling the temperature of the semiconductor device while keeping the heat conducting heat to a temperature higher than that of the contact arranged around the contact with a substance having higher heat conductivity. Semiconductor device inspection method.
JP2007075697A 2007-03-23 2007-03-23 Inspection tool and semiconductor device inspection method Pending JP2008232958A (en)

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