JP2008226922A5 - - Google Patents
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- JP2008226922A5 JP2008226922A5 JP2007059040A JP2007059040A JP2008226922A5 JP 2008226922 A5 JP2008226922 A5 JP 2008226922A5 JP 2007059040 A JP2007059040 A JP 2007059040A JP 2007059040 A JP2007059040 A JP 2007059040A JP 2008226922 A5 JP2008226922 A5 JP 2008226922A5
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- Prior art keywords
- manufacturing
- magnetic
- magnetic layer
- magnetic device
- metallocene
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Description
請求項２に記載の発明では、請求項１に記載の磁気デバイスの製造方法であって、前記磁性層を形成する工程は、バナジウム、クロム、ルテニウム、オスミウムの群から選択される少なくとも一種の元素を含有した金属層を含む多層構造で前記磁性層を形成することを要旨とする。 In the invention according to claim 2, a method of manufacturing a magnetic device according to claim 1, the step of forming the magnetic layer, vanadium, chromium, ruthenium, of at least one selected from the group of osmium The gist is to form the magnetic layer with a multilayer structure including a metal layer containing an element.
上記課題を解決するため、請求項７に記載の発明では、磁気デバイスの製造装置であって、基板上に、鉄、コバルト、ニッケルの群から選択される少なくとも一種の元素を含有した磁性層を有し、前記基板上にシクロペンタジエンを供給する供給手段と、前記基板上からメタロセンを排気する排気手段と、前記供給手段を駆動し、前記磁性層上に形成されたマスクの開口から露出する前記磁性層と前記シクロペンタジエンとによってメタロセンを生成させ、前記排気手段を駆動し、前記メタロセンを排気させる制御手段と、を備えたことを要旨とする。 In order to solve the above-mentioned problem, in the invention according to claim 7, there is provided a magnetic device manufacturing apparatus, wherein a magnetic layer containing at least one element selected from the group consisting of iron, cobalt, and nickel is formed on a substrate. And supplying means for supplying cyclopentadiene on the substrate, exhaust means for exhausting metallocene from the substrate, driving the supply means, and exposing from an opening of a mask formed on the magnetic layer The present invention includes a control unit that generates metallocene with a magnetic layer and the cyclopentadiene, drives the exhaust unit, and exhausts the metallocene.
請求項８に記載の発明では、請求項７に記載の磁気デバイスの製造装置であって、前記磁性層は、バナジウム、クロム、ルテニウム、オスミウムの群から選択される少なくとも一種の元素を含有した金属層を含む多層構造であることを要旨とする。 The invention according to claim 8, an apparatus for manufacturing a magnetic device according to claim 7, wherein the magnetic layer is vanadium contained chromium, ruthenium, at least one element selected from the group of osmium The gist of the invention is a multilayer structure including a metal layer.
Claims (3)
前記磁性層を形成する工程は、
バナジウム、クロム、ルテニウム、オスミウムの群から選択される少なくとも一種の元素を含有した金属層を含む多層構造で前記磁性層を形成する
ことを特徴とする磁気デバイスの製造方法。 A method of manufacturing a magnetic device according to claim 1,
The step of forming the magnetic layer includes
Vanadium, chromium, ruthenium, method of manufacturing a magnetic device according to claim <br/> forming said magnetic layer in a multilayer structure comprising a metal layer containing at least one element selected from the group of osmium.
前記基板上にシクロペンタジエンを供給する供給手段と、
前記基板上からメタロセンを排気する排気手段と、
前記供給手段を駆動し、前記磁性層上に形成されたマスクの開口から露出する前記磁性層と前記シクロペンタジエンとによってメタロセンを生成させ、前記排気手段を駆動し、前記メタロセンを排気させる制御手段と、
を備えたことを特徴とする磁気デバイスの製造装置。 A magnetic device manufacturing apparatus having a magnetic layer containing at least one element selected from the group consisting of iron, cobalt, and nickel on a substrate,
Supply means for supplying cyclopentadiene on the substrate;
Exhaust means for exhausting metallocene from the substrate;
Control means for driving the supply means, generating metallocene by the magnetic layer exposed from the opening of the mask formed on the magnetic layer and the cyclopentadiene, driving the exhaust means, and exhausting the metallocene; ,
An apparatus for manufacturing a magnetic device, comprising:
前記磁性層は、
バナジウム、クロム、ルテニウム、オスミウムの群から選択される少なくとも一種の元素を含有した金属層を含む多層構造である
ことを特徴とする磁気デバイスの製造装置。 The apparatus for manufacturing a magnetic device according to claim 7,
The magnetic layer is
Is a multi-layer structure including vanadium, chromium, ruthenium, a metal layer containing at least one element selected from the group of osmium
An apparatus for manufacturing a magnetic device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007059040A JP4905969B2 (en) | 2007-03-08 | 2007-03-08 | Magnetic device manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007059040A JP4905969B2 (en) | 2007-03-08 | 2007-03-08 | Magnetic device manufacturing equipment |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008226922A JP2008226922A (en) | 2008-09-25 |
| JP2008226922A5 true JP2008226922A5 (en) | 2010-01-21 |
| JP4905969B2 JP4905969B2 (en) | 2012-03-28 |
Family
ID=39845232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007059040A Active JP4905969B2 (en) | 2007-03-08 | 2007-03-08 | Magnetic device manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4905969B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2010084909A1 (en) * | 2009-01-21 | 2012-07-19 | キヤノンアネルバ株式会社 | Magnetic film processing chamber cleaning method, magnetic element manufacturing method, and substrate processing apparatus |
| US8334148B2 (en) | 2009-11-11 | 2012-12-18 | Samsung Electronics Co., Ltd. | Methods of forming pattern structures |
| US8158445B2 (en) | 2009-11-11 | 2012-04-17 | Samsung Electronics Co., Ltd. | Methods of forming pattern structures and methods of manufacturing semiconductor devices using the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6254442A (en) * | 1985-09-03 | 1987-03-10 | Hitachi Electronics Eng Co Ltd | Dry etching process |
| JPS635532A (en) * | 1986-06-25 | 1988-01-11 | Matsushita Electric Ind Co Ltd | Plasma cleaning process |
| JPH05251197A (en) * | 1992-03-09 | 1993-09-28 | Matsushita Electric Ind Co Ltd | Dry etching method |
| JPH06163466A (en) * | 1992-11-26 | 1994-06-10 | Sumitomo Metal Ind Ltd | Thin film removing method |
| JP3568164B2 (en) * | 1993-09-10 | 2004-09-22 | 株式会社東芝 | Processing method of magnetic thin film |
| JPH0855836A (en) * | 1994-08-16 | 1996-02-27 | Toshiba Electron Eng Corp | Reactive dry etching method |
| JP3131595B2 (en) * | 1997-09-22 | 2001-02-05 | 科学技術庁金属材料技術研究所長 | Mask for reactive ion etching |
| JP2001052979A (en) * | 1999-08-05 | 2001-02-23 | Sony Corp | Formation method for resist, working method for substrate, and filter structure |
| JP2002134471A (en) * | 2000-10-30 | 2002-05-10 | Sony Corp | Etching method and etching apparatus |
| JP4109135B2 (en) * | 2003-02-18 | 2008-07-02 | 株式会社日立ハイテクノロジーズ | Etching method for difficult-to-etch materials |
| JP2004288863A (en) * | 2003-03-20 | 2004-10-14 | Matsushita Electric Ind Co Ltd | Dry etching method |
-
2007
- 2007-03-08 JP JP2007059040A patent/JP4905969B2/en active Active
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