JP2008211185A5 - - Google Patents

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Publication number
JP2008211185A5
JP2008211185A5 JP2008007503A JP2008007503A JP2008211185A5 JP 2008211185 A5 JP2008211185 A5 JP 2008211185A5 JP 2008007503 A JP2008007503 A JP 2008007503A JP 2008007503 A JP2008007503 A JP 2008007503A JP 2008211185 A5 JP2008211185 A5 JP 2008211185A5
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JP
Japan
Prior art keywords
layer
conductive layer
conductive
memory element
nanoparticles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008007503A
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English (en)
Japanese (ja)
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JP2008211185A (ja
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Publication date
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Priority to JP2008007503A priority Critical patent/JP2008211185A/ja
Priority claimed from JP2008007503A external-priority patent/JP2008211185A/ja
Publication of JP2008211185A publication Critical patent/JP2008211185A/ja
Publication of JP2008211185A5 publication Critical patent/JP2008211185A5/ja
Withdrawn legal-status Critical Current

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JP2008007503A 2007-02-02 2008-01-17 記憶素子及び半導体装置 Withdrawn JP2008211185A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008007503A JP2008211185A (ja) 2007-02-02 2008-01-17 記憶素子及び半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007024860 2007-02-02
JP2008007503A JP2008211185A (ja) 2007-02-02 2008-01-17 記憶素子及び半導体装置

Publications (2)

Publication Number Publication Date
JP2008211185A JP2008211185A (ja) 2008-09-11
JP2008211185A5 true JP2008211185A5 (cg-RX-API-DMAC7.html) 2011-02-24

Family

ID=39787190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008007503A Withdrawn JP2008211185A (ja) 2007-02-02 2008-01-17 記憶素子及び半導体装置

Country Status (1)

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JP (1) JP2008211185A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101299256B1 (ko) * 2010-01-29 2013-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101295888B1 (ko) 2010-05-10 2013-08-12 한국전자통신연구원 저항형 메모리 장치 및 그 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
JP2006352104A (ja) * 2005-05-20 2006-12-28 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法

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