JP2008184692A - Tool for substrate plating and substrate plating apparatus - Google Patents

Tool for substrate plating and substrate plating apparatus Download PDF

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JP2008184692A
JP2008184692A JP2008115788A JP2008115788A JP2008184692A JP 2008184692 A JP2008184692 A JP 2008184692A JP 2008115788 A JP2008115788 A JP 2008115788A JP 2008115788 A JP2008115788 A JP 2008115788A JP 2008184692 A JP2008184692 A JP 2008184692A
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substrate
plating
plated
jig
holding member
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JP4764899B2 (en
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Tadaaki Yamamoto
忠明 山本
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Ebara Corp
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Ebara Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide: a method for plating a substrate by which both surfaces of the substrate to be plated can be simultaneously plated, the plating process can be drastically shortened, and a metal plating film can be formed even in a through-hole and a hole pattern; a tool for substrate plating; and a substrate plating apparatus. <P>SOLUTION: The tool 10 for substrate plating is used for dipping/holding a substrate to be plated in a plating solution in a plating tank of a plating apparatus. The tool 10 for substrate plating is provided with: a substrate holding mechanism (a first holding member 11 and a second holding member 12 are included) which seals a prescribed area of the peripheral edge part of the substrate to be plated to close the area and holds the substrate to be plated in such a state that the prescribed areas of both surfaces of the substrate to be plated are exposed; and electrode contacts which are arranged in a closed area and brought into contact with a conductive film of the surface of the substrate to be plated. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は半導体デバイス、液晶素子等の電子素子用基板の表面にCu等の金属めっき膜を形成し、該表面に形成された配線パターン溝、スルーホール、穴パターンを該金属めっき膜で埋め込むのに好適な基板めっき用治具及び基板めっき装置に関するものである。 In the present invention, a metal plating film such as Cu is formed on the surface of a substrate for an electronic element such as a semiconductor device or a liquid crystal element, and the wiring pattern groove, through hole, or hole pattern formed on the surface is embedded with the metal plating film. it relates jig and the substrate plating apparatus for can suitable substrate message to.

従来この種の基板めっき用治具としては、特許文献1に記載されたものがある。この基板めっき用治具110は、図24に示すように、板状の第1保持部材111と、環状のシールパッキン113が設けられた第2保持部材112とを具備し、該第1保持部材111とシールパッキン113の間に半導体ウエハ116を挟持保持すると共に、該シールパッキン113の内周部に半導体ウエハ116の表面が露出するように開口112aを形成し、第1保持部材111に保持される半導体ウエハ116の外周部分に外部電極に導通する第1通電部材117を設け、第2保持部材112には第1保持部材111の第1通電部材117と保持される半導体ウエハ116の面に露出した導電膜との両方に接触し、且つシールパッキン113でシールされる第2通電部118を設けたものである。   Conventionally, as this kind of substrate plating jig, there is one described in Patent Document 1. As shown in FIG. 24, the substrate plating jig 110 includes a plate-like first holding member 111 and a second holding member 112 provided with an annular seal packing 113, and the first holding member. The semiconductor wafer 116 is sandwiched and held between the seal packing 113 and the seal packing 113, and an opening 112 a is formed in the inner peripheral portion of the seal packing 113 so that the surface of the semiconductor wafer 116 is exposed, and is held by the first holding member 111. A first energizing member 117 that conducts to an external electrode is provided on the outer peripheral portion of the semiconductor wafer 116 to be exposed, and the second holding member 112 is exposed to the surface of the semiconductor wafer 116 held by the first energizing member 117 of the first holding member 111. The second energization part 118 that is in contact with both the conductive film and sealed with the seal packing 113 is provided.

上記構成の基板めっき用治具を用いてめっきを行うには、めっき液を収容しためっき槽の該めっき液中に、該基板めっき用治具に保持された半導体ウエハを浸漬すると共に、該半導体ウエハの露出面に対向して陽極電極板を配置し、半導体ウエハと陽極電極板との間にめっき電源を印加して、半導体ウエハの露出面に金属めっき膜を形成している。   In order to perform plating using the substrate plating jig having the above-described configuration, the semiconductor wafer held in the substrate plating jig is immersed in the plating solution in the plating tank containing the plating solution, and the semiconductor An anode electrode plate is disposed opposite to the exposed surface of the wafer, and a plating power source is applied between the semiconductor wafer and the anode electrode plate to form a metal plating film on the exposed surface of the semiconductor wafer.

上記従来構成の基板めっき用治具を用いためっき装置では、被めっき基板である半導体ウエハの片面にしかめっきできず、下記のような問題があった。
(1)被めっき基板の両面にめっきしようとすると2倍の運転時間を必要とする。
(2)被めっき基板のめっき膜厚の面内均一性に影響がでる。
(3)被めっき基板のスルーホールや穴パターンに金属めっき膜を形成できない。
特開平11−172492
In the plating apparatus using the substrate plating jig having the above-described conventional configuration, plating can be performed only on one surface of a semiconductor wafer which is a substrate to be plated, and there are the following problems.
(1) If it is going to plate on both sides of a substrate to be plated, twice the operation time is required.
(2) In- plane uniformity of the plating film thickness of the substrate to be plated is affected.
(3) A metal plating film cannot be formed in the through hole or hole pattern of the substrate to be plated.
JP-A-11-172492

本発明は上述の点に鑑みてなされたもので、被めっき基板の両面を同時にめっきでき、めっき工程を大幅に低減でき、且つスルーホールや穴パターン内にも金属めっき膜を形成できる基板めっき用治具及び基板めっき装置を提供することを目的とする。 The present invention has been made in view of the above points, and can be used to simultaneously plate both surfaces of a substrate to be plated, greatly reduce the plating process, and form a metal plating film in a through hole or hole pattern. An object of the present invention is to provide a working jig and a substrate plating apparatus.

上記課題を解決するため本発明は、被めっき基板を、めっき装置のめっき槽のめっき液中に浸漬保持するための基板めっき用治具であって、被めっき基板をその周縁部の所定領域をシールして密閉すると共に、該被めっき基板の両面所定領域を露出させて保持する基板保持機構と、密閉領域に配置され被めっき基板表面の導電膜に接触する電極接点を設けたことを特徴とする。 In order to solve the above-mentioned problems, the present invention provides a substrate plating jig for dipping and holding a substrate to be plated in a plating solution of a plating tank of a plating apparatus. A substrate holding mechanism that seals and seals and exposes and holds predetermined regions on both sides of the substrate to be plated, and an electrode contact that is disposed in the sealing region and contacts the conductive film on the surface of the substrate to be plated are provided. To do.

基板めっき用治具を上記のように構成することにより、基板保持機構で被めっき基板を保持し、めっき槽のめっき液中に浸漬した場合、該被めっき基板の両面所定領域がめっき液に接液すると共に、密閉領域の導電膜には電極接点が接触して通電できるから、被めっき基板の両面の所定領域に同時に金属めっき膜を形成できるめっきを行うことができる。   By configuring the substrate plating jig as described above, when the substrate to be plated is held by the substrate holding mechanism and immersed in the plating solution in the plating tank, the predetermined regions on both sides of the substrate to be plated are in contact with the plating solution. In addition, since the electrode contacts come into contact with the conductive film in the sealed region and can be energized, plating that can simultaneously form a metal plating film in a predetermined region on both sides of the substrate to be plated can be performed.

また、本発明は、上記基板めっき用治具において、基板保持機構は第1及び第2の保持部材を具備し、第1及び第2の保持部材にはそれぞれ被めっき基板の所定領域を露出させるための開口を設けると共に、該開口の周囲に配設され両保持部材で前記被めっき基板を挟持した際、該被めっき基板の表面に密接し周縁部の所定領域をシールして密閉空間とするシール部材を設け、該密閉空間内に被めっき基板面の導電膜に接触する電極接点を設けたことを特徴とする。 The present invention, in the substrate plating jig, the substrate holding mechanism to expose the first and comprising a second retaining member, the first and second holding members a predetermined area of each substrate-to-be-plated When the substrate to be plated is sandwiched between the holding members and disposed around the opening, a predetermined area in the peripheral portion is sealed to form a sealed space. A seal member is provided, and an electrode contact that contacts the conductive film on the surface of the substrate to be plated is provided in the sealed space.

基板めっき用治具を上記のように構成することにより、基板保持機構の第1の保持部材と第2の保持部材で被めっき基板を挟持して保持し、めっき槽のめっき液中に浸漬した場合、該被めっき基板の両面所定領域は両保持部材の開口を通してめっき液に接液すると共に、シール部材で密閉された密閉領域の導電膜には電極接点が接触して通電できるから、被めっき基板の両面の所定領域に同時に金属めっき膜を形成できるめっきを行うことができる。   By configuring the substrate plating jig as described above, the substrate to be plated is sandwiched and held by the first holding member and the second holding member of the substrate holding mechanism and immersed in the plating solution of the plating tank. In this case, the predetermined areas on both sides of the substrate to be plated are in contact with the plating solution through the openings of both holding members and the conductive film in the sealed area sealed by the seal member can be brought into contact with the electrode contact so that the current can be supplied. Plating which can form a metal plating film simultaneously on a predetermined region on both sides of the substrate can be performed.

また、本発明は、上記基板めっき用治具において、第1と第2の保持部材で前記被めっき基板を挟んだ状態で該両保持部材の両側部を保持するクランプ部材を具備するクランプ機構を具備することを特徴とする。 The present invention, in the substrate plating jig, a clamping mechanism having a clamp member for holding both side portions of both said holding member while sandwiching the object to be plated substrate with first and second holding members It is characterized by comprising.

上記のようにクランプ機構のクランプ部材で被めっき基板を挟んだ状態で両保持部材の両側部を保持するから、簡単な構成で且つ確実に被めっき基板の保持状態を維持できる。   Since both sides of both holding members are held in a state where the substrates to be plated are sandwiched between the clamp members of the clamp mechanism as described above, the holding state of the substrates to be plated can be reliably maintained with a simple configuration.

また、本発明は、上記基板めっき用治具において、第1保持部材の上部には一体的にハンガーが取付けられ、電極接点に導通する電極端子を該ハンガー部に設けたことを特徴とする。 Further, the present invention is characterized in that , in the substrate plating jig, a hanger is integrally attached to an upper portion of the first holding member, and an electrode terminal conducting to the electrode contact is provided in the hanger portion.

上記のように第1保持部材の上部には一体的にハンガーを取付けるので、該ハンガーを介して第1保持部材と第2保持部材で挟持された被めっき基板をめっき槽のめっき液中に浸漬した場合、該ハンガーの上端部はめっき液の液面より上に位置するから、上端部に設けた電極端子を通して被めっき基板の導電膜に容易に通電することが可能となる。   Since the hanger is integrally attached to the upper part of the first holding member as described above, the substrate to be plated sandwiched between the first holding member and the second holding member via the hanger is immersed in the plating solution in the plating tank. In this case, since the upper end portion of the hanger is located above the liquid surface of the plating solution, it is possible to easily energize the conductive film of the substrate to be plated through the electrode terminal provided on the upper end portion.

また、本発明は、めっき液を収容しためっき槽を具備し、該めっき槽のめっき液中に上記基板めっき用治具で保持した被めっき基板を浸漬し、該被めっき基板の両露出面に対向しアノード電極を配置したことを特徴とする基板めっき装置にある。 Further, the invention comprises a plating tank containing a plating solution, the object to be plated substrate held by the substrate plating jig was immersed in the plating solution in the plating tank, both the exposed surface of該被plated substrate The substrate plating apparatus is characterized in that an anode electrode is arranged opposite to the substrate plating apparatus.

上記のように基板めっき装置を上記基板めっき用治具で保持した被めっき基板をめっき液に浸漬し、該被めっき基板の両露出面に対向しアノード電極を配置した構成とすることにより、被めっき基板の両露出面に金属めっき膜を同時に形成することができる。 A substrate to be plated, which is held by the substrate plating jig as described above , is immersed in a plating solution as described above , and an anode electrode is disposed opposite to both exposed surfaces of the substrate to be plated. Metal plating films can be simultaneously formed on both exposed surfaces of the plating substrate.

本発明によれば、基板保持機構で被めっき基板を保持し、めっき槽のめっき液中に浸漬した場合、該被めっき基板の両面所定領域がめっき液に接液すると共に、密閉領域の導電膜には電極接点が接触して通電できるから、被めっき基板の両面の所定領域に同時に金属めっき膜を形成できる。 According to the present invention, when the substrate to be plated is held by the substrate holding mechanism and immersed in the plating solution in the plating tank, both the predetermined regions on both sides of the substrate to be plated come into contact with the plating solution and the conductive film in the sealed region. Since the electrode contacts can contact and be energized, a metal plating film can be formed simultaneously in a predetermined region on both sides of the substrate to be plated.

また、基板保持機構の第1の保持部材と第2の保持部材で被めっき基板を挟持して保持し、めっき槽のめっき液中に浸漬した場合、該被めっき基板の両面所定領域は両保持部材の開口を通してめっき液に接液すると共に、シール部材で密閉された密閉領域の導電膜には電極接点が接触して通電できるから、被めっき基板の両面の所定領域に同時に金属めっき膜を形成できる。 Further, when the substrate to be plated is sandwiched and held by the first holding member and the second holding member of the substrate holding mechanism and immersed in the plating solution of the plating tank, both predetermined regions on both sides of the substrate to be plated are held. In addition to being in contact with the plating solution through the opening of the member, the electrode contact contacts the conductive film in the sealed area sealed by the seal member and can be energized, so a metal plating film is simultaneously formed in a predetermined area on both sides of the substrate to be plated it can.

また、本発明によれば、クランプ機構のクランプ部材で被めっき基板を挟んだ状態で両保持部材の両側部を保持するから、簡単な構成で且つ確実に被めっき基板の保持状態を維持できる。 In addition, according to the present invention, the both sides of both holding members are held in a state where the substrates to be plated are sandwiched by the clamp members of the clamp mechanism, so that the holding state of the substrates to be plated can be reliably maintained with a simple configuration.

また、本発明によれば、第1保持部材の上部には一体的にハンガーを取付けるので、該ハンガーを介して第1保持部材と第2保持部材で挟持された被めっき基板をめっき槽のめっき液中に浸漬した場合、該ハンガーの上端部はめっき液の液面より上に位置するから、上端部に設けた電極端子を通して被めっき基板の導電膜に容易に通電することが可能となる。 According to the present invention, since the hanger is integrally attached to the upper part of the first holding member, the substrate to be plated sandwiched between the first holding member and the second holding member via the hanger is plated in the plating tank. When immersed in the solution, the upper end portion of the hanger is located above the liquid surface of the plating solution, so that the conductive film of the substrate to be plated can be easily energized through the electrode terminal provided on the upper end portion.

また、本発明によれば、基板めっき装置を請求項乃至のいずれか1項に記載の基板めっき用治具で保持した被めっき基板をめっき液に浸漬し、該被めっき基板の両露出面に対向しアノード電極を配置した構成とすることにより、被めっき基板の両露出面に金属めっき膜を同時に形成することができる基板めっき装置を提供できる。 Further , according to the present invention, the substrate to be plated held by the substrate plating jig according to any one of claims 1 to 3 is immersed in a plating solution, and both exposure of the substrate to be plated is performed. By adopting a configuration in which the anode electrode is disposed so as to face the surface, it is possible to provide a substrate plating apparatus capable of simultaneously forming metal plating films on both exposed surfaces of the substrate to be plated.

以下、本願発明の実施の形態例を図面に基づいて説明する。図1乃至図12は本発明に係る基板めっき用治具の構成例を示す図で、図1は正面図、図2は平面図、図3は底面図、図4は図1のK−K断面矢視図、図5は図4のA矢視図、図6は図4のB矢視図、図7は図4のC矢視図、図8は図5のD−D断面矢視図、図9は図5のE−E断面矢視図、図10は図1のF−F断面矢視図、図11は図5のG−G断面矢視図、図12は図6のH−H断面矢視図である。   Embodiments of the present invention will be described below with reference to the drawings. 1 to 12 are views showing a configuration example of a substrate plating jig according to the present invention. FIG. 1 is a front view, FIG. 2 is a plan view, FIG. 3 is a bottom view, and FIG. FIG. 5 is a view taken in the direction of arrow A in FIG. 4, FIG. 6 is a view taken in the direction of arrow B in FIG. 4, FIG. 7 is a view taken in the direction of arrow C in FIG. 9 is a cross-sectional arrow view taken along the line EE in FIG. 5, FIG. 10 is a cross-sectional view taken along the line FF in FIG. 1, FIG. 11 is a cross-sectional view taken along the line GG in FIG. It is a HH section arrow view.

基板めっき用治具10は、板状の第1保持部材11と第2保持部材12を具備し、両保持部材11、12は下端をヒンジ機構13で開閉自在に連結されている。ヒンジ機構13は、第2保持部材12に固定された樹脂材(例えば、HTPVC)からなる2本のフック13−1、13−1を具備し、該フック13−1、13−1はステンレス鋼(例えば、SUS303)からなるフックピン13−2で第1保持部材11の下端部に回動自在に枢支されている。第1保持部材11は樹脂材(例えば、HTPVC)からなり略5角形状で中央部に開口として穴11aが設けられ、その上部にはT字状の樹脂材(例えば、HTPVC)からなるハンガー14が一体的に取付けられている。第2保持部材12は樹脂材(例えば、HTPVC)からなり略5角形状で中央部に開口として穴12aが設けられている。   The substrate plating jig 10 includes a plate-like first holding member 11 and a second holding member 12, and both holding members 11, 12 are connected to a lower end by a hinge mechanism 13 so as to be freely opened and closed. The hinge mechanism 13 includes two hooks 13-1 and 13-1 made of a resin material (for example, HTPVC) fixed to the second holding member 12, and the hooks 13-1 and 13-1 are made of stainless steel. A hook pin 13-2 made of (for example, SUS303) is pivotally supported on the lower end portion of the first holding member 11 so as to be rotatable. The first holding member 11 is made of a resin material (for example, HTPVC), has a substantially pentagonal shape, and is provided with a hole 11a as an opening in the center portion. Are integrally attached. The second holding member 12 is made of a resin material (for example, HTPVC), has a substantially pentagonal shape, and is provided with a hole 12a as an opening in the center.

第1保持部材11と第2保持部材12はヒンジ機構13を介して閉じた状態(重ね合わせた状態)で、左右のクランプ15、16で保持されるようになっている。左右のクランプ15、16はそれぞれ樹脂材(例えば、HTPVC)からなり、第1保持部材11と第2保持部材12を重ね合わせた状態でその両側辺が嵌挿される溝15a、16aを有し、その下端が第1保持部材11の両側下端にピン17、18で回動自在に枢支されている。   The first holding member 11 and the second holding member 12 are held by left and right clamps 15 and 16 in a closed state (overlapped state) via a hinge mechanism 13. The left and right clamps 15 and 16 are each made of a resin material (for example, HTPVC), and have grooves 15a and 16a into which both sides are inserted in a state where the first holding member 11 and the second holding member 12 are overlapped, The lower end of the first holding member 11 is pivotally supported by pins 17 and 18 at the lower ends on both sides.

第1保持部材11の第2保持部材12に対向する面の穴11aの外周側には図5に示すようにシールリング(リング状のシール部材)19が取付けられ、第2保持部材12の第1保持部材11に対向する面の穴12aの外周側には図7に示すようにシールリング20が取付けられている。シールリング19、20はゴム材(例えば、シリコンゴム)からなる。また、第2保持部材12の第1保持部材11に対向する面のシールリング20の外側にはOリング29が取付けられている。   A seal ring (ring-shaped seal member) 19 is attached to the outer peripheral side of the hole 11a on the surface of the first holding member 11 facing the second holding member 12, as shown in FIG. As shown in FIG. 7, a seal ring 20 is attached to the outer peripheral side of the hole 12 a on the surface facing the one holding member 11. The seal rings 19 and 20 are made of a rubber material (for example, silicon rubber). An O-ring 29 is attached to the outside of the seal ring 20 on the surface of the second holding member 12 that faces the first holding member 11.

シールリング19、20は、それぞれ断面が矩形状でその内周側に突起部19a、20aを具備し、第1保持部材11と第2保持部材12との間に被めっき基板を介在させて重ね合わせた状態で突起部19aと突起部20aが被めっき基板の表面を押圧し、密接し、穴11a、12aの外周側に位置する突起部19aと突起部20aとOリング29で囲まれた領域をめっき液の浸水しない水密状態の領域とする。第1保持部材11の第2保持部材12に対向する面には図5及び図8に示すようにシールリング19を突出して、半導体ウエハ等の被めっき基板Wを位置決めするための基板ガイドピン21が穴11aの外周側に計8本立設している。   Each of the seal rings 19 and 20 has a rectangular cross section and includes protrusions 19a and 20a on the inner peripheral side thereof. The seal rings 19 and 20 are stacked with a substrate to be plated interposed between the first holding member 11 and the second holding member 12. In the combined state, the projection 19a and the projection 20a press the surface of the substrate to be plated and are in close contact with each other, and the region surrounded by the projection 19a, the projection 20a, and the O-ring 29 located on the outer peripheral side of the holes 11a and 12a. Is a watertight region where the plating solution is not immersed. As shown in FIGS. 5 and 8, a seal ring 19 is projected on the surface of the first holding member 11 that faces the second holding member 12, and substrate guide pins 21 for positioning a substrate W to be plated such as a semiconductor wafer. Has a total of 8 standing on the outer peripheral side of the hole 11a.

第1保持部材11の第2保持部材12に対向する面の穴11aの外周側には、図5、図9及び図10に示すように導電プレート22が計6個設けられている。この6個の導電プレート22内の3個は導電ピン23を介して図9に示すように被めっき基板Wの一方面(例えば表面)の導電膜(図示せず)に導通するようになっている。導電プレート22内の他の残り3個は導電ピン23を介して図10に示すように被めっき基板Wの一方面(例えば裏面)の導電膜(図示せず)に導通するようになっている。   A total of six conductive plates 22 are provided on the outer peripheral side of the hole 11a on the surface of the first holding member 11 facing the second holding member 12, as shown in FIGS. Three of the six conductive plates 22 are electrically connected to a conductive film (not shown) on one surface (for example, the front surface) of the substrate W to be plated, as shown in FIG. Yes. The remaining three in the conductive plate 22 are electrically connected to a conductive film (not shown) on one surface (for example, the back surface) of the substrate W as shown in FIG. .

上記6個の導電プレート22の内、被めっき基板Wの一方面(例えば表面)の導電膜に導通する導電プレート22は、配線溝25内を通る絶縁被覆線26を介してハンガー14の一方の端子板27に設けられた電極端子27a、27b、27c(図2参照)に接続され、基板Wの他方面(例えば裏面)の導電部に導通する導電プレート22は、配線溝25内の絶縁被覆線26を介してハンガー14の一方の端子板28に設けられた電極端子28a、28b、28c(図2参照)に接続される。図5、図11において、30は樹脂材(例えば、PVC)からなる配線押さえである。   Among the six conductive plates 22, the conductive plate 22 that is electrically connected to the conductive film on one surface (for example, the surface) of the substrate W to be plated is one of the hangers 14 through an insulating coated wire 26 that passes through the wiring groove 25. The conductive plate 22 connected to the electrode terminals 27a, 27b, 27c (see FIG. 2) provided on the terminal plate 27 and conducting to the conductive portion on the other surface (for example, the back surface) of the substrate W is an insulating coating in the wiring groove 25. It is connected to electrode terminals 28a, 28b and 28c (see FIG. 2) provided on one terminal plate 28 of the hanger 14 through a wire 26. 5 and 11, reference numeral 30 denotes a wiring retainer made of a resin material (for example, PVC).

上記構成の基板めっき用治具において、第1保持部材11と第2保持部材12とを開いた状態で、第1保持部材11に立設している8本の基板ガイドピン21に囲まれた領域に被めっき基板Wを載置することにより、被めっき基板Wは第1保持部材11の所定位置に位置決めされる。そして第1保持部材11と第2保持部材12とをヒンジ機構13を介して閉じ、更に左右クランプ15、16をそれぞれ回動させ、第1保持部材11と第2保持部材12の両辺を左右クランプ15、16の溝15a、16aに嵌挿する。これにより、被めっき基板Wは第1保持部材11の所定位置に位置決めされた状態で保持される。   In the substrate plating jig having the above structure, the first holding member 11 and the second holding member 12 are opened and surrounded by the eight substrate guide pins 21 standing on the first holding member 11. By placing the substrate to be plated W in the region, the substrate to be plated W is positioned at a predetermined position of the first holding member 11. Then, the first holding member 11 and the second holding member 12 are closed via the hinge mechanism 13, and the left and right clamps 15 and 16 are rotated to respectively clamp both sides of the first holding member 11 and the second holding member 12. 15 and 16 are inserted into the grooves 15a and 16a. Thereby, the to-be-plated substrate W is hold | maintained in the state positioned in the predetermined position of the 1st holding member 11. FIG.

また、これにより、シールリング19、20の突起部19a、20aとOリング29で囲まれた領域をめっき液の浸水しない水密状態に密閉すると同時に、被めっき基板Wの該突起部19a、20aより外側がこの密閉空間内に位置し、更に被めっき基板Wの両面の第1保持部材11の穴11aと第2保持部材12の穴12aに対応する部分が該穴11a、12aに露出する。また、6個の導電プレート22の内、基板Wの一方面の導電部に導通する導電プレート22は、ハンガー14の一方の端子板27の電極端子27a、27b、27cに接続され、基板Wの他方面の導電部に導通する導電プレート22はハンガー14の一方の端子板28に設けられた電極端子28a、28b、28cに接続される。   As a result, the region surrounded by the protrusions 19a and 20a of the seal rings 19 and 20 and the O-ring 29 is sealed in a watertight state where the plating solution is not immersed, and at the same time, from the protrusions 19a and 20a of the substrate W to be plated. The outside is located in this sealed space, and the portions corresponding to the holes 11a of the first holding member 11 and the holes 12a of the second holding member 12 on both surfaces of the substrate W to be plated are exposed in the holes 11a and 12a. Further, among the six conductive plates 22, the conductive plate 22 that conducts to the conductive portion on one surface of the substrate W is connected to the electrode terminals 27 a, 27 b, 27 c of the one terminal plate 27 of the hanger 14, and The conductive plate 22 connected to the conductive portion on the other side is connected to electrode terminals 28a, 28b, 28c provided on one terminal plate 28 of the hanger 14.

図13は上記基板めっき用治具10を用いる基板めっき装置の構成例を示す図である。図示するように、基板めっき装置50はめっき槽51を具備し、該めっき槽51内のめっき液Q中には、半導体ウエハ等の被めっき基板Wを保持した基板めっき用治具10が吊下げられて配置されている。このように基板めっき用治具10をめっき液Qに浸漬した状態でめっき液Qの液面レベルLは図1のLレベルとなる。基板めっき用治具10に保持された被めっき基板Wの両露出面に対向するようにアノード電極52、52が電極保持部材58、58に保持されて配置している。アノード電極52、52は図14に示すように板状で第1保持部材11の穴11a及び第2保持部材12の穴12aに対応した形状の円形で且つ略同じ大きさであり、板状の電極保持部材58、58に取付けられている。   FIG. 13 is a view showing a configuration example of a substrate plating apparatus using the substrate plating jig 10. As shown in the figure, the substrate plating apparatus 50 includes a plating tank 51, and a substrate plating jig 10 holding a substrate W to be plated such as a semiconductor wafer is suspended in the plating solution Q in the plating tank 51. Has been placed. As described above, the level L of the plating solution Q becomes the L level in FIG. 1 with the substrate plating jig 10 immersed in the plating solution Q. The anode electrodes 52, 52 are held by the electrode holding members 58, 58 so as to face both exposed surfaces of the substrate W to be plated held by the substrate plating jig 10. As shown in FIG. 14, the anode electrodes 52, 52 are plate-like, circular and have substantially the same size corresponding to the holes 11 a of the first holding member 11 and the holes 12 a of the second holding member 12, and are plate-like. The electrode holding members 58 and 58 are attached.

被めっき基板Wとアノード電極52、52の間には絶縁材からなる調節板60、60が配置されている。該調節板60、60の中央部には図15に示すように、第1保持部材11の穴11a及び第2保持部材12の穴12aと相似形の円形状の穴60aが形成されている。各アノード電極52、52にはそれぞれめっき電流調節器59、59を介してめっき電源(直流電源)53、53の陽極が接続され、基板めっき用治具10に保持された被めっき基板Wの両面導電膜に端子板27の電極端子27a、27b、27c及び端子板28の電極端子28a、28b、28cを介して電源(直流電源)53、53の陰極に接続し、該各めっき電源53、53からめっき電流調節器59、59で調整されためっき電流を通電することにより、被めっき基板Wの両露出面に同時に金属(例えば、Cu)めっき膜を形成することができる。   Adjustment plates 60 and 60 made of an insulating material are disposed between the substrate to be plated W and the anode electrodes 52 and 52. As shown in FIG. 15, a circular hole 60 a similar to the hole 11 a of the first holding member 11 and the hole 12 a of the second holding member 12 is formed in the central portion of the adjusting plates 60, 60. Anodes of plating power sources (DC power sources) 53 and 53 are connected to the anode electrodes 52 and 52 through plating current regulators 59 and 59, respectively, and both surfaces of the substrate W to be plated held by the substrate plating jig 10 are connected. The conductive film is connected to the cathodes of power sources (DC power sources) 53 and 53 through electrode terminals 27a, 27b and 27c of the terminal plate 27 and electrode terminals 28a, 28b and 28c of the terminal plate 28, and the plating power sources 53 and 53 Then, by applying the plating current adjusted by the plating current adjusters 59 and 59, a metal (for example, Cu) plating film can be formed on both exposed surfaces of the substrate W to be plated at the same time.

このとき各電流調節器59、59で被めっき基板Wのそれぞれのめっき面に流れるめっき電流値を調整することにより、金属めっき膜の膜厚を調整することができる。また、調節板60、60の穴60a、60aの大きさを調整することにより、めっき槽51内の電位分布を調節して被めっき基板Wの面上に形成される金属めっき膜の膜厚分布を調節することができる。   At this time, the thickness of the metal plating film can be adjusted by adjusting the value of the plating current flowing through the plating surface of the substrate W to be plated by the current adjusters 59 and 59. Further, the thickness distribution of the metal plating film formed on the surface of the substrate W to be plated by adjusting the potential distribution in the plating tank 51 by adjusting the size of the holes 60a, 60a of the adjusting plates 60, 60. Can be adjusted.

また、めっき槽51の外側には該めっき槽51から溢れ出ためっき液Qを収容するための外槽57が設けられている。めっき槽51から溢れ外槽57に流れ込んだめっき液Qは、めっき液循環ポンプ54により、恒温ユニット55、フィルタ56を通してめっき槽51の下部から槽内に供給され、めっき液Qは循環する。   In addition, an outer tank 57 for storing the plating solution Q overflowing from the plating tank 51 is provided outside the plating tank 51. The plating solution Q overflowing from the plating tank 51 and flowing into the outer tank 57 is supplied from the lower part of the plating tank 51 through the constant temperature unit 55 and the filter 56 by the plating solution circulation pump 54, and the plating solution Q circulates.

上記のようなめっき装置50を用いて被めっき基板の両面に同時にめっきすることにより、例えば図16(a)に示すように、スルーホール61、両面に配線溝パターンや穴パターン62を形成し、その表面にバリアー層63、シード層(金属(例えばCu)からなる導電膜層)64を形成した被めっき基板Wの両面に同時にめっきを施し、図16(b)に示すように金属(例えばCu)めっき層65を形成し、該金属めっき層65でスルーホール61、配線溝パターンや穴パターン62を埋め込むことができる。その後、研磨等により、余分な金属めっき層65やシード層64を除去することにより、図16(c)に示すようにスルーホール61、配線溝パターンや穴パターン62を金属めっき層65で埋め込んだ被めっき基板を得る。   By simultaneously plating on both surfaces of the substrate to be plated using the plating apparatus 50 as described above, for example, as shown in FIG. 16 (a), through holes 61, wiring groove patterns and hole patterns 62 are formed on both surfaces, Plating is simultaneously performed on both surfaces of the substrate W on which the barrier layer 63 and the seed layer (conductive film layer made of metal (for example, Cu)) 64 are formed, and the metal (for example, Cu is formed) as shown in FIG. ) A plated layer 65 can be formed, and the through hole 61, the wiring groove pattern, and the hole pattern 62 can be embedded with the metal plated layer 65. Thereafter, the excess metal plating layer 65 and the seed layer 64 are removed by polishing or the like, thereby filling the through holes 61, the wiring groove patterns, and the hole patterns 62 with the metal plating layer 65 as shown in FIG. A substrate to be plated is obtained.

上記のように、被めっき基板Wの両面に同時に金属めっき膜を施すめっき方法により、予め図16(c)に示すような、スルーホール61、配線溝パターンや穴パターン62を金属めっき層65で埋め込んだ異なるパターンの基板Wを複数枚(ここではW1乃至W6)製造しておき、図17に示すように基板W1乃至W6を積層することにより、例えばIC等の電子部品を容易に製造することができる。   As described above, the through hole 61, the wiring groove pattern, and the hole pattern 62 as shown in FIG. 16C are previously formed by the metal plating layer 65 by a plating method in which metal plating films are simultaneously applied to both surfaces of the substrate W to be plated. By manufacturing a plurality of embedded substrates W (W1 to W6 in this case) with different patterns and stacking the substrates W1 to W6 as shown in FIG. 17, electronic components such as ICs can be easily manufactured. Can do.

図18乃至図21は本発明に係る基板めっき用治具の他の構成例を示す図で、図18は基板めっき用治具で被めっき基板を保持した状態を示す図、図19は図18のA−A断面矢視図、図20は基板めっき用治具の第1保持部材及びハンガー部の構成を示す図、図21は基板めっき用治具の第2保持部材の構成を示す図である。図示するように、本基板めっき用治具70は第1保持部材71と第2保持部材72を具備し、該両保持部材71、72はヒンジ機構85で開閉自在に構成されている。第1保持部材71と第2保持部材72の間に基板Wの上縁部を挟み込み第2保持部材72に取付けた蝶ねじ73を第1保持部材71に形成したねじ孔74に螺合させることにより、第1保持部材71と第2保持部材72で被めっき基板Wを挟持するようになっている。   FIGS. 18 to 21 are diagrams showing another configuration example of the substrate plating jig according to the present invention, FIG. 18 is a diagram showing a state in which the substrate to be plated is held by the substrate plating jig, and FIG. FIG. 20 is a diagram showing a configuration of the first holding member and the hanger part of the substrate plating jig, and FIG. 21 is a diagram showing a configuration of the second holding member of the substrate plating jig. is there. As shown in the figure, the substrate plating jig 70 includes a first holding member 71 and a second holding member 72, and both the holding members 71 and 72 are configured to be opened and closed by a hinge mechanism 85. The upper edge portion of the substrate W is sandwiched between the first holding member 71 and the second holding member 72 and the thumbscrew 73 attached to the second holding member 72 is screwed into the screw hole 74 formed in the first holding member 71. Thus, the substrate W to be plated is sandwiched between the first holding member 71 and the second holding member 72.

第1保持部材71と第2保持部材72はそれぞれ樹脂材(例えば、HTPVC)からなり、互いに対向する面には被めっき基板Wの表面に形成された導電膜に接触する電極接点75、76が複数(図では3個ずつ)設けられている。第1保持部材71にはハンガー77が一体に設けられ、該ハンガー77の両端上部には通電用の端子板78、79が設けられている。第1保持部材71の電極接点75は電線80で端子板79の電極端子(図示せず)に接続されている。また、第1保持部材71には通電用接点81が設けられ、第2保持部材72には通電用接点81に当接する通電用バネ接点82が設けられている。通電用接点81は電線83で端子板78の電極端子(図示せず)に接続され、通電用バネ接点82は電線84で電極接点76に接続されている。従って、第1保持部材71と第2保持部材72を閉じた場合、複数の電極接点76は電線84、通電用バネ接点82、通電用接点81及び電線83を介して端子板78の電極端子に接続される。   The first holding member 71 and the second holding member 72 are each made of a resin material (for example, HTPVC), and electrode contacts 75 and 76 that are in contact with the conductive film formed on the surface of the substrate W to be plated are provided on the surfaces facing each other. A plurality (three in the figure) are provided. A hanger 77 is integrally provided on the first holding member 71, and terminal plates 78 and 79 for energization are provided on both upper ends of the hanger 77. The electrode contact 75 of the first holding member 71 is connected to an electrode terminal (not shown) of the terminal plate 79 by an electric wire 80. The first holding member 71 is provided with an energizing contact 81, and the second holding member 72 is provided with an energizing spring contact 82 that contacts the energizing contact 81. The energizing contact 81 is connected to an electrode terminal (not shown) of the terminal plate 78 by an electric wire 83, and the energizing spring contact 82 is connected to the electrode contact 76 by an electric wire 84. Therefore, when the first holding member 71 and the second holding member 72 are closed, the plurality of electrode contacts 76 are connected to the electrode terminals of the terminal plate 78 via the electric wires 84, the energizing spring contacts 82, the energizing contacts 81 and the electric wires 83. Connected.

図22は上記基板めっき用治具70を用いるめっき装置の構成例を示す図である。図示するように、めっき装置50はめっき槽51を具備し、該めっき槽51内のめっき液Q中には、基板めっき用治具70で上縁部を挟持し保持された被めっき基板Wが配置されている。このように基板めっき用治具70に挟持された被めっき基板Wをめっき液Qに浸漬した状態でめっき液Qの液面レベルLは図18のLレベルとなる。基板めっき用治具70に保持された被めっき基板Wの両露出面に対向するようにアノード電極52、52が配置されている。アノード電極52、52は板状で被めっき基板Wのめっき面の形状に対応した形状でめっき面と略同じ大きさである。   FIG. 22 is a diagram showing a configuration example of a plating apparatus using the substrate plating jig 70. As shown in the figure, the plating apparatus 50 includes a plating tank 51. In the plating solution Q in the plating tank 51, a substrate to be plated W held by holding the upper edge portion by a substrate plating jig 70 is held. Has been placed. The liquid level L of the plating solution Q becomes the L level in FIG. 18 in a state in which the substrate W to be plated sandwiched between the substrate plating jigs 70 is immersed in the plating solution Q. Anode electrodes 52, 52 are arranged so as to face both exposed surfaces of the substrate W to be plated held by the substrate plating jig 70. The anode electrodes 52 and 52 are plate-like and have a shape corresponding to the shape of the plating surface of the substrate W to be plated and are approximately the same size as the plating surface.

被めっき基板Wとアノード電極52、52の間には絶縁材からなる調節板60、60が配置されている。該調節板60、60の中央部には図示は省略するが、被めっき基板Wのめっき面の形状と相似形の穴が形成されている。各アノード電極52、52にはそれぞれめっき電流調節器59、59を介してめっき電源(直流電源)53、53の陽極が接続され、基板めっき用治具70に保持された被めっき基板Wの両面導電膜に端子板78及び端子板79の電極端子を介してめっき電源(直流電源)53、53の陰極が接続され、該各めっき電源53、53からめっき電流調節器59、59で調整されためっき電流値を通電することにより、被めっき基板Wの両露出面に同時に金属(例えば、Cu)めっき膜を形成することができる。   Adjustment plates 60 and 60 made of an insulating material are disposed between the substrate to be plated W and the anode electrodes 52 and 52. Although not illustrated in the center of the adjusting plates 60, 60, a hole having a shape similar to the shape of the plating surface of the substrate W to be plated is formed. The anodes 52, 52 are connected to the anodes of plating power sources (DC power sources) 53, 53 via plating current regulators 59, 59, respectively, and both surfaces of the substrate W to be plated held by the substrate plating jig 70. The cathodes of plating power sources (DC power sources) 53 and 53 were connected to the conductive film through the electrode terminals of the terminal plate 78 and the terminal plate 79, and adjusted by the plating current regulators 59 and 59 from the plating power sources 53 and 53, respectively. By applying a plating current value, a metal (for example, Cu) plating film can be simultaneously formed on both exposed surfaces of the substrate W to be plated.

このとき各電流調節器59、59で被めっき基板Wのそれぞれのめっき面に流れるめっき電流を調整することによりめっき膜の膜厚を調整することができる。また、調節板60、60の穴の大きさを調整することにより、めっき槽51内の電位分布を調節して被めっき基板Wの面上に形成される金属めっき膜の膜厚分布を調節することができる。   At this time, the film thickness of the plating film can be adjusted by adjusting the plating current flowing through the plating surface of the substrate W to be plated by the current adjusters 59 and 59. Further, by adjusting the size of the holes of the adjusting plates 60, 60, the potential distribution in the plating tank 51 is adjusted to adjust the film thickness distribution of the metal plating film formed on the surface of the substrate W to be plated. be able to.

また、めっき槽51の外側には該めっき槽51から溢れ出ためっき液Qを収容するための外槽57が設けられている。めっき槽51から溢れ外槽57に流れ込んだめっき液Qは、めっき液循環ポンプ54により、恒温ユニット55、フィルタ56を通してめっき槽51の下部から槽内に供給され、めっき液Qが循環する点は、図13に示す基板めっき装置と同一である。   In addition, an outer tank 57 for storing the plating solution Q overflowing from the plating tank 51 is provided outside the plating tank 51. The plating solution Q that overflows from the plating tank 51 and flows into the outer tank 57 is supplied from the lower part of the plating tank 51 through the constant temperature unit 55 and the filter 56 by the plating solution circulation pump 54 and the plating solution Q circulates. This is the same as the substrate plating apparatus shown in FIG.

なお、基板めっき用治具70は、ヒンジ機構85を介して第1保持部材71と第2保持部材72を開閉自在に構成しているが、基板の上縁部を挟持するための基板めっき用治具はこのような構成に限定されるものではなく、要は被めっき基板Wの上縁部を挟持する基板挟持部と、該基板挟持部に挟持された被めっき基板Wの表面の導電膜に接触する電極接点を具備する構成であればどんな構成でもよい。   The substrate plating jig 70 is configured to be able to open and close the first holding member 71 and the second holding member 72 via a hinge mechanism 85. However, the substrate plating jig 70 sandwiches the upper edge portion of the substrate. The jig is not limited to such a configuration. In short, a substrate holding portion that holds the upper edge portion of the substrate to be plated W, and a conductive film on the surface of the substrate W to be plated that is held by the substrate holding portion. Any configuration may be used as long as it has an electrode contact in contact with the electrode.

また、上記のように被めっき基板をめっき液Qの液面上で支持される基板めっき用治具で保持される被めっき基板Wとしては、剛性を有する板状の被めっき基板に限定されるものではなく、例えば図23に示すように、枠体91に薄膜状の被めっき基板Wを貼り付けた構成のものでもよく、この枠体91の上縁部を被めっき基板Wの上縁部と共に基板めっき用治具90で挟持して保持し、該被めっき基板を枠体91ごと図22に示す構成の基板めっき装置50のめっき槽51のめっき液中に浸漬し、該枠体91に貼り付けられた被めっき基板の両面に金属膜を形成するようにしてもよい。この場合、基板めっき用治具90には被めっき基板Wの両面に形成された導電膜に通電する電極接点(図示せず)を設ける。なお、図23(a)は正面図、図23(b)は図23(a)のA−A断面矢視図である。   Further, the substrate to be plated W held by the substrate plating jig supported on the surface of the plating solution Q as described above is limited to a plate-shaped substrate to be rigid. For example, as shown in FIG. 23, a structure in which a thin film-like substrate W is attached to a frame body 91 may be used, and the upper edge portion of the frame body 91 may be the upper edge portion of the substrate W to be plated. In addition, the substrate plating jig 90 holds and holds the substrate to be plated together with the frame body 91 in the plating solution of the plating tank 51 of the substrate plating apparatus 50 having the configuration shown in FIG. A metal film may be formed on both surfaces of the substrate to be plated. In this case, the substrate plating jig 90 is provided with electrode contacts (not shown) for energizing the conductive films formed on both surfaces of the substrate W to be plated. 23A is a front view, and FIG. 23B is a cross-sectional view taken along the line AA in FIG. 23A.

以上本発明の実施形態を説明したが、本発明は上記実施形態に限定されるものではなく、特許請求の範囲、及び明細書と図面に記載された技術的思想の範囲内において種々の変形が可能である。なお、直接明細書及び図面に記載がない何れの形状や構造や材質であっても、本願発明の作用・効果を奏する以上、本願発明の技術的思想の範囲内である。   Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the technical idea described in the claims and the specification and drawings. Is possible. It should be noted that any shape, structure, or material not directly described in the specification and drawings is within the scope of the technical idea of the present invention as long as the effects and advantages of the present invention are exhibited.

本発明に係る基板めっき用治具の構成例を示す正面図である。It is a front view which shows the structural example of the jig | tool for board | substrate plating which concerns on this invention. 本発明に係る基板めっき用治具の構成例を示す平面図である。It is a top view which shows the structural example of the jig | tool for board | substrate plating which concerns on this invention. 本発明に係る基板めっき用治具の構成例を示す底面図である。It is a bottom view which shows the structural example of the jig | tool for board | substrate plating which concerns on this invention. 図1のK−K断面矢視図である。It is a KK cross-sectional arrow view of FIG. 図4のA矢視図である。It is A arrow directional view of FIG. 図4のB矢視図である。It is a B arrow view of FIG. 図4のC矢視図である。It is C arrow line view of FIG. 図5のD−D断面矢視図である。FIG. 6 is a DD cross-sectional view of FIG. 5. 図5のE−E断面矢視図である。FIG. 6 is an EE cross-sectional arrow view of FIG. 5. 図1のF−F断面矢視図である。It is a FF cross-sectional arrow view of FIG. 図5のG−G断面矢視図である。FIG. 6 is a cross-sectional view taken along the line G-G in FIG. 5. 図6のH−H断面矢視図である。FIG. 7 is a cross-sectional view taken along the line HH in FIG. 6. 本発明に係る基板めっき装置の構成を示す図である。It is a figure which shows the structure of the board | substrate plating apparatus which concerns on this invention. 図13の基板めっき装置のアノード電極及び電極保持部材の形状を示す図である。It is a figure which shows the shape of the anode electrode and electrode holding member of the board | substrate plating apparatus of FIG. 図13の基板めっき装置の調節板の形状を示す図である。It is a figure which shows the shape of the adjustment board of the board | substrate plating apparatus of FIG. 本発明に係るめっき方法のめっき工程を示す図である。It is a figure which shows the plating process of the plating method which concerns on this invention. 本発明に係るめっき方法で製造した基板を用いた電部品の構成例を示す図である。It is a figure which shows the structural example of the electrical component using the board | substrate manufactured with the plating method which concerns on this invention. 本発明に係る基板めっき用治具の構成例を示す正面図である。It is a front view which shows the structural example of the jig | tool for board | substrate plating which concerns on this invention. 図18のA−A断面図である。It is AA sectional drawing of FIG. 図18の基板めっき用治具の第1保持部材及びハンガー部の構成を示す図である。It is a figure which shows the structure of the 1st holding member and hanger part of the jig | tool for board | substrate plating of FIG. 図18の基板めっき用治具の第2保持部材の構成を示す図である。It is a figure which shows the structure of the 2nd holding member of the jig | tool for board | substrate plating of FIG. 本発明に係る基板めっき装置の構成を示す図である。It is a figure which shows the structure of the board | substrate plating apparatus which concerns on this invention. 本発明に係る基板めっき装置でめっきする被めっき基板の構成例を示す図である。It is a figure which shows the structural example of the to-be-plated board | substrate plated with the board | substrate plating apparatus which concerns on this invention. 従来の基板めっき用治具の構成を示す正面図である。It is a front view which shows the structure of the conventional jig | tool for substrate plating.

符号の説明Explanation of symbols

10 基板めっき用治具
11 第1保持部材
12 第2保持部材
13 ヒンジ機構
14 ハンガー
15 クランプ
16 クランプ
17 ピン
18 ピン
19 シールリング
20 シールリング
21 基板ガイドピン
22 導電プレート
23 導電ピン
25 配線溝
26 絶縁被覆線
27 端子板
28 端子板
29 Oリング
30 配線押え
50 めっき装置
51 めっき槽
52 アノード電極
53 めっき電源
54 めっき液循環ポンプ
55 恒温ユニット
56 フィルタ
57 外槽
58 電極保持部材
59 電流調節器
60 調節板
61 スルーホール
62 配線溝パターンや穴パターン
63 バリアー層
64 シード層
65 金属めっき層
70 基板めっき用治具
71 第1保持部材
72 第2保持部材
73 蝶ねじ
74 ねじ孔
75 電極接点
76 電極接点
77 ハンガー
78 端子板
79 端子板
80 電線
81 通電用接点
82 通電用バネ接点
83 電線
84 電線
85 ヒンジ機構
90 基板めっき用治具
91 枠体
DESCRIPTION OF SYMBOLS 10 Substrate plating jig 11 1st holding member 12 2nd holding member 13 Hinge mechanism 14 Hanger 15 Clamp 16 Clamp 17 Pin 18 Pin 19 Seal ring 20 Seal ring 21 Substrate guide pin 22 Conductive plate 23 Conductive pin 25 Wiring groove 26 Insulation Covered wire 27 Terminal plate 28 Terminal plate 29 O-ring 30 Wiring retainer 50 Plating device 51 Plating tank 52 Anode electrode 53 Plating power supply 54 Plating solution circulation pump 55 Constant temperature unit 56 Filter 57 Outer tank 58 Electrode holding member 59 Current controller 60 Adjusting plate 61 Through hole 62 Wiring groove pattern and hole pattern 63 Barrier layer 64 Seed layer 65 Metal plating layer 70 Substrate plating jig 71 First holding member 72 Second holding member 73 Butterfly screw 74 Screw hole 75 Electrode contact 76 Electrode contact 77 C Gar 78 terminal plate 79 terminal plate 80 wire 81 energizing contact 82 energizing spring contacts 83 wire 84 wire 85 hinge mechanism 90 jig 91 frame substrate plating

Claims (5)

被めっき基板を、めっき装置のめっき槽のめっき液中に浸漬保持するための基板めっき用治具であって、
被めっき基板をその周縁部の所定領域をシールして密閉すると共に、該被めっき基板の両面所定領域を露出させて保持する基板保持機構と、前記密閉領域に配置され前記被めっき基板表面の導電膜に接触する電極接点を設けたことを特徴とする基板めっき用治具。
A substrate plating jig for immersing and holding a substrate to be plated in a plating solution of a plating tank of a plating apparatus,
A substrate holding mechanism that seals and seals a predetermined area on the peripheral portion of the substrate to be plated, and exposes and holds both predetermined areas on both sides of the substrate to be plated, and conductivity of the surface of the substrate to be plated disposed in the sealed area. A substrate plating jig comprising an electrode contact in contact with a film.
請求項に記載の基板めっき用治具において、
前記基板保持機構は第1及び第2の保持部材を具備し、
前記第1及び第2の保持部材にはそれぞれ前記被めっき基板の前記所定領域を露出させるための開口を設けると共に、前記該開口の周囲に配設され両保持部材で前記被めっき基板を挟持した際、該被めっき基板の表面に密接し前記周縁部の所定領域をシールして密閉空間とするシール部材を設け、該密閉空間内に前記被めっき基板面の導電膜に接触する電極接点を設けたことを特徴とする基板めっき用治具。
The jig for substrate plating according to claim 1 ,
The substrate holding mechanism includes first and second holding members,
Each of the first and second holding members is provided with an opening for exposing the predetermined region of the substrate to be plated, and the substrate to be plated is sandwiched between the holding members disposed around the opening. In this case, a sealing member that is in close contact with the surface of the substrate to be plated and seals a predetermined region of the peripheral portion to form a sealed space is provided, and an electrode contact that contacts the conductive film on the surface of the substrate to be plated is provided in the sealed space. A substrate plating jig characterized by that.
請求項に記載の基板めっき用治具において、
前記第1と第2の保持部材で前記被めっき基板を挟んだ状態で該両保持部材の両側部を保持するクランプ部材を具備するクランプ機構を具備することを特徴とする基板めっき用治具。
The jig for substrate plating according to claim 2 ,
A jig for substrate plating, comprising: a clamp mechanism including a clamp member that holds both sides of the holding member in a state where the substrate to be plated is sandwiched between the first and second holding members.
請求項又はに記載の基板めっき用治具において、
前記第1保持部材の上部には一体的にハンガーが取付けられ、前記電極接点に導通する電極端子を該ハンガー部に設けたことを特徴とする基板めっき用治具。
In the jig for substrate plating according to claim 2 or 3 ,
A jig for substrate plating, wherein a hanger is integrally attached to an upper portion of the first holding member, and an electrode terminal that conducts to the electrode contact is provided in the hanger portion.
めっき液を収容しためっき槽を具備し、該めっき槽のめっき液中に請求項乃至のいずれか1項に記載の基板めっき用治具で保持した被めっき基板を浸漬し、該被めっき基板の両露出面に対向しアノード電極を配置したことを特徴とする基板めっき装置。 A plating tank containing a plating solution is provided, and the substrate to be plated held by the substrate plating jig according to any one of claims 1 to 4 is immersed in the plating solution of the plating tank, A substrate plating apparatus comprising an anode electrode facing both exposed surfaces of a substrate.
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