CN116324045B

CN116324045B - Substrate holder, plating apparatus, and method for manufacturing plating apparatus

Info

Publication number: CN116324045B
Application number: CN202180064554.6A
Authority: CN
Inventors: 増田泰之; 樋渡良辅; 下山正
Original assignee: Ebara Corp
Current assignee: Ebara Corp
Priority date: 2021-03-03
Filing date: 2021-03-03
Publication date: 2023-12-08
Anticipated expiration: 2041-03-03
Also published as: CN116324045A; JP7192132B1; JPWO2022185435A1; WO2022185435A1; US20230383431A1; KR102553048B1; KR20230038606A

Abstract

The present application relates to a substrate holder, a plating apparatus, and a method for manufacturing the plating apparatus, wherein the substrate holder holds a substrate in the plating apparatus, and the substrate holder comprises: a sealing member that closes an outer peripheral portion of the substrate and has a first opening in which a surface to be plated of the substrate is exposed; and a seal ring holder which presses the seal and has a second opening in which the surface to be plated of the substrate is exposed, wherein an opening diameter ratio, which is a ratio of an opening diameter of the second opening to an opening diameter of the first opening, is in a range of 99.32% to 99.80%.

Description

Substrate holder, plating apparatus, and method for manufacturing plating apparatus

Technical Field

The application relates to a substrate holder, a plating apparatus, and a method of manufacturing the plating apparatus.

Background

As an example of the plating apparatus, a cup-type plating apparatus is known. In the cup-type plating apparatus, a substrate (e.g., a semiconductor wafer) held by a substrate holder is immersed in a plating solution with a surface to be plated facing downward, and a voltage is applied between the substrate and an anode, thereby depositing a conductive film (plating film) on the surface of the substrate. In such a plating apparatus, it is known that the density of electric lines of force (electric field) directed to the surface to be plated of the substrate during plating affects the uniformity of the thickness of the plated film. In U.S. Pat. No. 6,193,859 (patent document 1), it is described that a flange is provided below a seal holder for holding a seal for protecting a contact for supplying power to a substrate, and the opening diameter of the flange is changed, whereby the thickness of a plating film at the edge of the substrate is adjusted.

Patent document 1: U.S. Pat. No. 6,193,859 specification

In patent document 1, there is no discussion about the effect of the substrate holder seal and the seal holder structure on the uniformity of the plating film thickness. The seal member of the substrate holder is provided as an annular member having an opening for exposing the surface to be plated of the substrate to the plating solution. Generally, the opening diameter of the packing holder is configured to be smaller than the opening diameter of the packing so that the packing holder can appropriately press the packing. The difference in opening diameters between the seal and the seal holder may affect the density of electric lines of force (electric field) directed to the surface to be plated of the substrate, and may further affect the uniformity of the plating film thickness.

Disclosure of Invention

An object of the present application is to provide a seal for a substrate holder and a seal holder structure capable of improving uniformity of a plating film thickness.

According to one aspect of the present application, there is provided a substrate holder for holding a substrate with a plated surface facing downward in a plating apparatus, the substrate holder comprising: a sealing material for sealing the outer periphery of the substrate and having a first opening in which the surface to be plated of the substrate is exposed; and a seal ring holder which presses the seal and has a second opening in which the surface to be plated of the substrate is exposed, wherein an opening diameter ratio, which is a ratio of an opening diameter of the second opening to an opening diameter of the first opening, is in a range of 99.32% to 99.80%.

Drawings

Fig. 1 is a perspective view showing the overall structure of the plating apparatus according to the present embodiment.

Fig. 2 is a plan view showing the overall structure of the plating apparatus according to the present embodiment.

Fig. 3 is a schematic view showing an example of a plating module according to the present embodiment.

Fig. 4 is a schematic view showing the structure of the substrate holder according to the present embodiment.

Fig. 5 is an explanatory view illustrating a power line in the vicinity of a substrate.

FIG. 6 is a simulation result example of in-plane uniformity of plating film thickness.

FIG. 7 is a table showing the ratio of SRH to the opening diameter of the seal in the example of the simulation result.

Fig. 8 is an explanatory diagram illustrating a method of calculating in-plane uniformity.

FIG. 9 is a simulation result example of the thickness of the plating film.

Fig. 10A is a schematic view showing a structure of a substrate holder according to a modification.

Fig. 10B is a schematic view showing a structure of a substrate holder according to a modification.

Fig. 10C is a schematic view showing a structure of a substrate holder according to a modification.

Detailed Description

Hereinafter, embodiments of the present application will be described with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and overlapping description thereof is omitted.

Fig. 1 is a perspective view showing the overall structure of the plating apparatus according to the present embodiment. Fig. 2 is a plan view showing the overall structure of the plating apparatus according to the present embodiment. As shown in fig. 1 and 2, the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wetting module 200, a pre-dipping module 300, a plating module 400, a cleaning module 500, a spin rinse and dry module 600, a transfer apparatus 700, and a control module 800.

The loading port 100 is a module for loading substrates stored in a cassette such as a FOUP, not shown, into the plating apparatus 1000 or unloading substrates from the plating apparatus 1000 to the cassette. In the present embodiment, the 4 load ports 100 are arranged in a horizontal direction, but the number and arrangement of the load ports 100 are arbitrary. The transfer robot 110 is a robot for transferring substrates, and is configured to transfer substrates between the load port 100, the aligner 120, and the transfer apparatus 700. The transfer robot 110 and the transfer apparatus 700 can transfer substrates via a temporary placement table, not shown, when transferring substrates between the transfer robot 110 and the transfer apparatus 700.

The aligner 120 is a module for aligning the position of the orientation flat, notch, or the like of the substrate with a predetermined direction. In the present embodiment, the 2 aligners 120 are arranged in the horizontal direction, but the number and arrangement of aligners 120 are arbitrary. The prewetting module 200 wets the surface of the substrate to be plated before the plating process with a treatment liquid such as pure water or deaerated water, and replaces the air inside the pattern formed on the surface of the substrate with the treatment liquid. The prewetting module 200 is configured to perform a prewetting process in which the plating solution is easily supplied into the pattern by replacing the processing solution in the pattern with the plating solution during plating. In the present embodiment, 2 pre-wetting modules 200 are arranged in the vertical direction, but the number and arrangement of the pre-wetting modules 200 are arbitrary.

The prepreg module 300 is configured to perform, for example, a prepreg process in which a seed layer surface or the like formed on a surface of a substrate to be plated before a plating process is etched with a treatment solution such as sulfuric acid or hydrochloric acid to remove an oxide film having a large electrical resistance, and the surface of a plating base is cleaned or activated. In the present embodiment, 2 prepreg modules 300 are arranged in the vertical direction, but the number and arrangement of prepreg modules 300 are arbitrary. The plating module 400 performs a plating process on a substrate. In the present embodiment, the number of components of the 12 plating modules 400 arranged in the vertical direction by 3 and in the horizontal direction by 4 is two, and 24 plating modules 400 are provided in total, but the number and arrangement of the plating modules 400 are arbitrary.

The cleaning module 500 is configured to perform a cleaning process on the substrate in order to remove plating solution and the like remaining on the substrate after the plating process. In the present embodiment, 2 cleaning modules 500 are arranged in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin rinse and dry module 600 is a module for drying the substrate after the cleaning process by rotating the substrate at a high speed. In the present embodiment, 2 spin rinse and dry modules are arranged in the vertical direction, but the number and arrangement of spin rinse and dry modules are arbitrary. The transport apparatus 700 is an apparatus for transporting substrates between a plurality of modules in the plating apparatus 1000. The control module 800 is configured to control a plurality of modules of the plating apparatus 1000, and is configured, for example, by a general computer or a special purpose computer having an input/output interface with an operator. The control module 800 includes a volatile and/or nonvolatile memory, or is configured to be able to communicate with such a memory. The control module 800 includes a nonvolatile storage medium storing a program, parameters, and the like for controlling each part of the plating apparatus, or is configured to be able to communicate with such a storage medium.

An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, a substrate stored in a cassette is carried into the load port 100. Next, the transfer robot 110 takes out the substrate from the cassette of the load port 100 and transfers the substrate to the aligner 120. The aligner 120 aligns the position of the orientation flat, notch, etc. of the substrate with a prescribed direction. The transfer robot 110 delivers the substrates aligned in the direction by the aligner 120 to the transfer apparatus 700.

The transfer device 700 transfers the substrate received from the transfer robot 110 to the pre-wetting module 200. The pre-wetting module 200 performs a pre-wetting process on the substrate. The transfer device 700 transfers the substrate subjected to the pre-wetting process to the prepreg module 300. The prepreg module 300 performs prepreg treatment on the substrate. The transport device 700 transports the prepreg-treated substrate to the plating module 400. The plating module 400 performs a plating process on a substrate.

The transfer device 700 transfers the substrate subjected to the plating process to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The conveyor 700 conveys the substrate subjected to the cleaning process to the spin rinse and dry module 600. The spin rinse and dry module 600 performs a drying process on the substrate. The transfer device 700 delivers the substrate subjected to the drying process to the transfer robot 110. The transfer robot 110 transfers the substrate received from the transfer device 700 to the cassette of the load port 100. Finally, the cassette housing the substrate is carried out from the loading port 100.

Fig. 3 is a schematic view showing an example of a plating module according to the present embodiment. As shown in the figure, the plating module 400 according to the present embodiment is a so-called face-down type or cup type plating module. The plating solution is, for example, a copper sulfate solution, and the plating film can be a copper film. However, the plating film may be any metal that can be plated, and the plating solution can be selected according to the type of plating film.

The plating module 400 includes a plating tank 401, a substrate holder 403 as a substrate holder, and a plating solution storage tank 404. The substrate holder 403 is configured to hold the substrate 402 such as a wafer with its plated surface facing downward. The plating module 400 has a motor 411 that rotates the substrate holder 403 in the circumferential direction. The motor 411 receives power from a power source not shown. The motor 411 is controlled by the control module 800 to rotate the substrate holder 403 and the substrate 402 held by the substrate holder 403. In other words, the control module 800 controls the rotation speed (also referred to as frequency, rotation speed) of the substrate 402 per unit time by controlling the rotation of the motor 411. By rotating the substrate 402, a flow of the plating solution is formed near the substrate surface, and a sufficient amount of ions are uniformly supplied to the substrate 402. An anode 410 is disposed in the plating tank 401 so as to face the substrate 402. An anode mask (not shown) for adjusting the exposed region of the anode 410 may be provided on the anode 410.

The plating module 400 also has a plating solution receiving slot 408. The plating solution in the plating solution reservoir tank 404 is supplied from the bottom of the plating tank 401 into the plating tank 401 through the filter 406 and the plating solution supply pipe 407 by the pump 405. Plating solution that overflows from plating tank 401 is received by plating solution receiving tank 408 and returned to plating solution holding tank 404.

The plating module 400 also has a power supply 409 connected to the substrate 402 and the anode 410. The motor 411 rotates the substrate holder 403, and the power supply 409 applies a predetermined voltage (dc voltage, pulse voltage) between the substrate 402 and the anode 410, thereby flowing a plating current between the anode 410 and the substrate 402, and forming a plating film on the plated surface of the substrate 402.

A plate (resistor) 10 for electric field adjustment, in which a plurality of holes are provided, is disposed between the substrate 402 and the anode 410. The holes penetrate between the front and rear surfaces of the plate 10 to form paths through which the plating solution and ions in the plating solution pass. By adjusting the opening density formed by the plurality of holes, the resistance value (resistance value against ion flow or plating current) of the plate 10 can be adjusted.

A paddle 412 is disposed between the base plate 402 and the plate 10. The stirring bar 412 is driven by the driving mechanism 413, and the plating solution is stirred by reciprocating in parallel with the substrate 402 (in a substantially horizontal direction), so that a stronger liquid flow is formed on the surface of the substrate 402, and a sufficient amount of ions is uniformly supplied to the substrate 402. The driving mechanism 413 includes: a motor 413a that receives power from a power source not shown; a rotation-to-linear motion conversion mechanism 413b such as a ball screw, which converts the rotation of the motor 413a into linear motion; and a shaft 413c connected to the rotation-translation mechanism 413b and the paddle 412, and transmitting power of the rotation-translation mechanism 413b to the paddle 412. The control module 800 controls the speed of reciprocation (also referred to as the speed of movement) of the paddle 412 by controlling the rotation of the motor 413a.

Fig. 4 is a schematic view showing the structure of the substrate holder according to the present embodiment. The substrate holder 403 includes: a contact (not shown) for contacting the outer peripheral portion of the substrate 402 to supply power; the seal 421 is an annular member closing the contact; and a Seal Ring Holder (SRH) 422 as an example of a seal holder that holds the seal 421. The sealing member 421 contacts the outer periphery of the substrate 402 to the inside of the outer periphery, and seals the outer periphery of the substrate 402, thereby preventing the plating solution from penetrating into the contact between the contact and the substrate 402. The seal 421 is in contact with the substrate 402, and the SRH422 presses the seal 421 against the substrate 402, so that the plating solution does not intrude into the contact side. The sealing member 421 includes an opening 431 having an opening diameter Φseal so as to expose the surface to be plated of the substrate 402. The SRH422 includes an opening 432 having an opening diameter Φ SRH in order to expose the surface to be plated of the substrate 402. As shown in fig. 4, the opening diameter Φ SRH of the SRH422 is formed smaller than the opening diameter Φseal of the seal 421 so that the SRH422 can press the seal 421 (Φ SRH < Φseal).

Fig. 5 is an explanatory view illustrating a power line in the vicinity of a substrate. The electric lines of force (electric field) are directed from the anode 410 toward the substrate 402 due to the voltage applied between the substrate 402 and the anode 410. As is clear from fig. 4 and 5, the electric lines (electric fields) indicated by the arrows contract at the opening 432 of the SRH422 and expand at the opening 431 of the seal 421 due to the difference between the opening diameter Φ SRH of the SRH422 and the opening diameter Φseal of the seal 421. Accordingly, the applicant controls the in-plane uniformity of the plating film thickness on the substrate surface by controlling the relationship between the seal opening diameter Φseal and the SRH opening diameter Φ SRH. That is, it was found that the in-plane uniformity of the plating film thickness on the substrate surface can be improved by balancing the contraction of the electric field by the SRH422 and the diffusion of the electric field by the seal 421, and the relationship between the optimum opening diameters Φ SRH and Φseal (opening diameter ratio=Φ SRH/Φseal described later) in which the plating film thickness distribution becomes uniform is determined.

As shown in fig. 5, in addition to the seal opening diameter and the SRH opening diameter, it is considered that the heights Hseal and hsh of the seal also affect the electric field lines (electric fields). Therefore, the height hbank=hseal+hsrh of the bank formed by the seal 421 and the SRH422 was defined, and the influence of the height Hbank of the bank on the electric field was verified. In order to create a strong plating solution flow on the surface of the substrate 402, it is preferable to have the substrate 402 as close as possible to the paddle 412. Therefore, the height of the bank needs to be reduced so that the paddle 412 does not collide with the bank. On the other hand, in view of the function of the SRH422 for preventing the invasion of the plating solution by pressing the sealing member 421 against the substrate 402, the SRH422 is required to have a mechanical strength capable of sufficiently withstanding the reaction force generated by the compression of the sealing member 421, and a certain degree of thickness (bank height) is required. In view of the balance between the two, the height of the bank is preferably in the range of 2.0 mm.ltoreq.Hbank.ltoreq.3.0 mm, more preferably about 2.5mm.

FIG. 6 is a simulation result example of in-plane uniformity of plating film thickness. The simulation can be implemented using commercially available or proprietary plating resolution software/programs. As simulated analysis conditions (model), parameters including the module structure (including the material, shape, size, and/or arrangement of the seal and SRH), applied voltage, and the type of plating solution of the plating module were set. For example, COMSOL Multiphysics (registered trademark) can be used as the analysis software. In this simulation, the combination of the sizes of the SRH opening diameter Φ SRH and the seal opening diameter Φseal was changed, and the plating film thickness distribution obtained as a result of plating was calculated for a round wafer having a diameter of 300mm (fig. 9), and the in-plane uniformity U was calculated from the plating film thickness distribution. The bank height Hbank is 2.5mm (seal height hseal=1 mm, srh height hsrh=1.5 mm). The seal height is the height of the seal 421 when the SRH422 holding the seal 421 is fixed to the substrate holder body by screw fixation or the like and pressed against the substrate 402 to collapse the seal 421. Further, these values are design values, and it is noted that the actual substrate holder values may deviate somewhat due to deformation of the SRH422 caused by the reaction force from the seal 421 and/or dimensional tolerances of the seal 421, SRH422, etc. FIG. 6A is a simulation result of in-plane uniformity U in the case where the plating seed layer is a wafer 300mm in diameter and the Cu layer 300nm thick, by changing the combination of the SRH opening diameter and the seal opening diameter. FIG. 6 (B) is a simulation result of in-plane uniformity U in the case where the plating seed layer is a wafer 300mm in diameter and the Cu layer has a film thickness of 50nm by changing the combination of the SRH opening diameter and the seal opening diameter.

Fig. 8 is an explanatory diagram illustrating a method of calculating in-plane uniformity. In the figure, the horizontal axis represents the radial position of the substrate, and the vertical axis represents the plating film thickness. The thickness of the coating film on the vertical axis is shown as an average film thickness of the entire substrate. The average film thickness of the entire substrate may be an average value of film thicknesses when an arbitrary number of measurement points (sampling points) of film thickness are set in the substrate surface. In this figure, tmax, tmin, tavg is the maximum value of the film thickness, the minimum value of the film thickness, and the average value of the film thickness when any number of measurement points (sampling points) of the film thickness are set in the substrate surface. In this embodiment, the in-plane uniformity U of the plating film thickness is calculated using the following formula (1). The in-plane uniformity U is a value that is smaller as the uniformity of the plating film thickness is higher, and the uniformity of the plating film thickness in the ideal case (in the case where the plating film thickness is completely the same over the entire substrate) is u=0%.

U[％]＝(Tmax－Tmin)/2/Tavg＊100···(1)

FIG. 9 is a simulation result example of the thickness of the plating film. In the figure, the horizontal axis represents the radial position of the substrate, and the vertical axis represents the plating film thickness. The thickness of the coating film on the vertical axis is shown as an average film thickness of the entire substrate. The average film thickness of the entire substrate may be an average value of film thicknesses in the case where an arbitrary number of measurement points (analog points) of film thickness are set in the substrate surface. Fig. 6 shows simulation results of film thickness distribution corresponding to a part of the simulation result example. Fig. 9 (a) shows an example of simulation results of the film thickness in the case where the seal opening diameter Φseal=295.2 mm and the srh opening diameter Φ srh =293.8 mm are obtained in a wafer having a Cu seed layer film thickness of 300nm and a diameter of 300 mm. At this time, the in-plane uniformity u=0.56%. Fig. 9 (B) shows an example of simulation results of the film thickness in the case where the seal opening diameter Φseal=294.8mm and the srh opening diameter Φ srh =294.5 mm are used in a wafer having a Cu seed layer film thickness of 300nm and a diameter of 300 mm. At this time, the in-plane uniformity u=1.84%. Fig. 9 (C) shows an example of simulation results of the film thickness in the case where the seal opening diameter Φseal=295.3mm and the srh opening diameter Φ srh =293.3 mm were used as a Cu seed layer having a film thickness of 300nm in a wafer having a diameter of 300 mm. At this time, the in-plane uniformity u=1.70%. As is clear from the simulation result example of fig. 9, the distribution of the plating film thickness on the substrate, particularly the distribution of the plating film thickness on the outer periphery of the substrate, varies greatly by the combination of the sizes of the seal opening diameter and the SRH opening diameter.

For each combination of the seal opening diameter Φseal and the SRH opening diameter Φ SRH, the film thickness distribution illustrated in fig. 9 was obtained by simulation, and fig. 6 shows the result of calculating the in-plane uniformity U using the formula (1) shown in fig. 8 and described above. As can be seen from fig. 6, by changing the combination of the seal opening diameter and the SRH opening diameter, the uniformity of the plating film thickness (in-plane uniformity U) was changed. In this example, the condition of the desired in-plane uniformity is set to 1.5% or less of the in-plane uniformity U, and the opening diameter ratio R shown in the formula (2) is calculated for the combination of the SRH opening diameter Φ SRH and the seal opening diameter Φseal satisfying 1.5% or less of the in-plane uniformity U. Here, in the present embodiment, as described above, since Φ srh < Φseal, the opening diameter ratio becomes R < 1.

The ratio of opening diameters R=Φ srh/Φseal×100[% ] is. Cndot. 2

Fig. 7 is a table showing a ratio of SRH to opening diameter of the seal in the simulation result example of fig. 6. In the figure, the numerical values of the columns represent the opening diameter ratios R corresponding to the respective combinations of SRH opening diameters and seal opening diameters. Also shown in this figure are opening diameter ratios R corresponding to each combination of SRH opening diameters and seal opening diameters that do not satisfy in-plane uniformity U.ltoreq.1.5%. The gray background bars represent the opening diameter ratio that does not satisfy in-plane uniformity U.ltoreq.1.5%, and the combination of seal opening diameter and SRH opening diameter. Bars outside the gray background represent the ratio of opening diameters that satisfies in-plane uniformity U.ltoreq.1.5%, and the combination of seal opening diameter and SRH opening diameter. Each column of fig. 7 (a) corresponds to each column of fig. 6 (a). Each column of fig. 7 (B) corresponds to each column of fig. 6 (B). According to FIG. 7, the range of the opening diameter ratio satisfying the in-plane uniformity U.ltoreq.1.5% is [ 99.32%. Ltoreq.opening diameter ratio R.ltoreq.99.80% ], more preferably [ 99.42%. Ltoreq.opening diameter ratio R.ltoreq.99.59% ]. Therefore, in order to satisfy the opening diameter ratio R in the above range, the seal opening diameter Φseal and the SRH opening diameter Φ SRH are selected so that the desired in-plane uniformity U is equal to or less than 1.5%.

In the method of manufacturing the plating apparatus 1000 (plating module 400) including the substrate holder 403 for holding the substrate, in the step of assembling the seal 421 having the seal opening 431 and closing the outer peripheral portion of the substrate and the SRH422 having the SRH opening 432 and pressing the seal 421, the SRH422 and the seal 421 are selected so that the opening diameter Φ SRH of the SRH opening 432 is within a range of 99.32% to 99.80% (more preferably 99.42% to 99.59%) of the opening diameter Φseal of the seal opening 431, and a desired film thickness distribution with in-plane uniformity u.ltoreq.1.5% is achieved.

Fig. 10A is a schematic view showing a structure of a substrate holder according to a modification. In this example, a tapered portion 423 having a diameter that increases as the lower opening 432 is provided at the opening edge of the opening 432 of the SRH422 on the lower side and the opening end side (the side opposite to the sealing material 421 and the substrate 402). The tapered portion 423 is also referred to as an open-end-side tapered portion. When such a tapered portion 423 is provided, bubbles on the surface of the substrate 402 are easily discharged when the substrate holder 403 is in contact with the plating solution. Further, in this structure, the opening diameter Φ SRH of the SRH mentioned above is the diameter of the narrowest portion of the opening 432 of the SRH 422.

Fig. 10B is a schematic view showing a structure of a substrate holder according to another modification. In this example, a tapered portion 424 having a diameter that increases as the upper opening 432 increases is provided on the upper side (the side closer to the sealing member 421 and the substrate 402) of the SRH 422. The taper 424 is also referred to as a seal-side taper. Since the tapered portion 424 having an enlarged diameter is provided on the seal 421 side, the plating solution can be prevented from accumulating in the step caused by the difference between the opening diameters of the SRH422 and the seal 421 after plating. Further, in this structure, the opening diameter Φ SRH of the SRH mentioned above is the diameter of the narrowest portion of the opening 432 of the SRH 422.

Fig. 10C is a schematic view showing a structure of a substrate holder according to still another modification. In this example, both the tapered portion 423 and the tapered portion 424 are provided in the SRH 422. In this case, both the effects of the above two examples can be obtained. That is, bubbles on the surface of the substrate 402 are easily discharged when the substrate holder 403 is in contact with the plating solution, and the plating solution can be prevented from accumulating in the step caused by the difference between the opening diameters of the SRH422 and the seal 421 after plating. Further, in this structure, the opening diameter Φ SRH of the SRH mentioned above is the diameter of the narrowest portion of the opening 432 of the SRH 422.

(other embodiments)

In the above embodiment, the substrate is held with the plated surface facing downward. In this embodiment, a so-called face-down type or cup type plating module is exemplified, but the above-described embodiment can also be applied to a so-called dip type plating module in which plating is performed using a substrate holder that holds a substrate in a state where a plated surface stands in the vertical direction.

The above embodiments include at least the following embodiments.

According to one embodiment, there is provided a substrate holder for holding a substrate in a plating apparatus, the substrate holder including: a sealing material for sealing the outer periphery of the substrate and having a first opening in which the surface to be plated of the substrate is exposed; and a seal ring holder which presses the seal and has a second opening in which the surface to be plated of the substrate is exposed, wherein an opening diameter ratio, which is a ratio of an opening diameter of the second opening to an opening diameter of the first opening, is in a range of 99.32% to 99.80%. In other words, the size of the opening diameter of the second opening is in the range of 99.32% to 99.80% of the size of the opening diameter of the first opening. The height of the bank formed by the seal and SRH may be 2.0mm to 3.0mm, and preferably about 2.5mm. The opening diameter is the diameter of the narrowest portion of the opening. The opening diameter ratio is calculated by the formula (2) by taking the ratio of the opening diameter Φ srh of the second opening to the opening diameter Φseal of the first opening as a percentage.

The ratio of opening diameters R=Φ srh/Φseal×100[% ] is. Cndot. 2

According to this embodiment, by controlling the opening diameter ratio of the Seal Ring Holder (SRH) to the seal within an appropriate range, the contraction of the electric field caused by the SRH and the diffusion of the electric field caused by the seal can be well balanced, and the uniformity of the thickness of the plating film plated on the substrate can be improved. Particularly, the effect of suppressing the variation in the plating film thickness in the outer peripheral portion of the substrate is obtained. In addition, the uniformity of the thickness of the plating film plated on the substrate can be improved without providing a member for adjusting the electric field on the front surface of the SRH.

According to one embodiment, the opening diameter ratio is in a range of 99.42% or more and 99.59% or less.

By further limiting the opening diameter ratio of the SRH to the seal member within the above range, the uniformity of the plating film thickness can be more reliably improved.

According to one embodiment, the second opening of the seal ring holder has a first tapered portion on a side away from the seal, and the first tapered portion is provided such that a diameter of the second opening becomes larger as the second tapered portion is further away from the seal.

In the case where such a first tapered portion is provided, bubbles on the surface of the substrate are easily discharged when the substrate holder is in contact with the plating liquid, and the plating liquid can be brought into uniform contact with the substrate. As a result, the in-plane uniformity of the plating thickness can be further improved.

According to one embodiment, the second opening of the seal ring holder has a second tapered portion on a side close to the seal, and the second tapered portion is provided so that a diameter of the second opening becomes larger as the second tapered portion is closer to the seal.

Since the second tapered portion having an enlarged diameter is provided on the seal side, the plating solution can be prevented from accumulating in the step caused by the difference between the SRH and the opening diameter of the seal after plating. When the plating solution is deposited on the step, the amount of the plating solution carried out per one substrate to be plated becomes large. The carried-out amount of the plating solution needs to be replenished, resulting in an increase in the running cost of the apparatus. In addition, (B) the amount of water and time required for cleaning the wafer after plating become large. The amount of water used results in an increase in the operating cost of the device. Further, if the cleaning time is long, the number of substrates that can be processed per unit time (i.e., the productivity and productivity of the apparatus) is affected. By preventing the plating solution from accumulating on the steps, the operation cost of the apparatus can be reduced and/or the productivity can be improved.

According to one embodiment, the second opening of the seal ring holder has a first tapered portion on a side away from the seal and a second tapered portion on a side close to the seal, the first tapered portion being arranged such that the diameter of the second opening becomes larger as the second tapered portion becomes closer to the seal.

According to this embodiment, both the above-described operation and effect by the first tapered portion and the operation and effect by the second tapered portion can be achieved.

According to one embodiment, there is provided a substrate holder for holding a substrate in a plating apparatus, the substrate holder including: a sealing material for sealing the outer periphery of the substrate and having a first opening in which the surface to be plated of the substrate is exposed; and a seal ring holder which presses the seal and has a second opening in which a plated surface of the substrate is exposed, wherein the second opening of the seal ring holder has a first tapered portion provided on a side away from the seal and/or a second tapered portion provided on a side close to the seal, the first tapered portion being provided so that a diameter of the second opening becomes larger as the first tapered portion is further away from the seal, and the second tapered portion being provided so that a diameter of the second opening becomes larger as the second tapered portion is further toward the seal.

According to this aspect, the above-described operational effect by the first tapered portion and/or the operational effect by the second tapered portion can be achieved.

According to one embodiment, in the substrate holder described in any one of the above embodiments, the substrate is held with the plated surface facing downward. According to this aspect, the above-described effects can be achieved in a so-called face-down or cup-type plating apparatus.

According to one embodiment, in the substrate holder according to any one of the above embodiments, the plating surface of the substrate is held in an upright state in the plating module. According to this aspect, the above-described effects can be achieved in a so-called immersion type plating apparatus in which a substrate is immersed in a plating solution in an upright state to be plated.

According to one embodiment, there is provided a plating apparatus including: the substrate holder according to any one of the above embodiments; and a plating bath in which the substrate holder is disposed.

According to this aspect, a plating apparatus having the above-described effects can be provided.

According to one embodiment, there is provided a method for manufacturing a plating apparatus including a substrate holder for holding a substrate, the method including a step of assembling a seal having a first opening and closing an outer peripheral portion of the substrate and a seal ring holder having a second opening and pressing the seal, wherein in the step, the seal ring holder and the seal are selected so that an opening diameter ratio, which is a ratio of an opening diameter of the second opening of the seal ring holder to an opening diameter of the first opening of the seal, is in a range of 99.32% to 99.80%.

According to this embodiment, by controlling the opening diameter ratio of the Seal Ring Holder (SRH) to the seal within an appropriate range, the uniformity of the plating film thickness plated on the substrate can be improved.

The embodiments of the present application have been described above, but the embodiments of the present application are for easy understanding of the present application, and are not limited to the present application. The present application is of course capable of modification and improvement without departing from its gist, and equivalents thereof are also encompassed in the present application. Further, any combination or omission of the respective constituent elements described in the claims and the specification may be made within a range in which at least a part of the above-described problems can be solved or at least a part of the effects can be achieved. The entire disclosure of the specification of U.S. Pat. No. 6,193,859 (patent document 1), including the specification, claims, drawings, and abstract, is incorporated herein by reference in its entirety.

Description of the reference numerals

Loading port; a transfer robot; an aligner; pre-wetting module; prepreg module; plating module; plating tank; substrate; substrate holder; plating solution holding tank; pump; filter; plating solution supply tube; plating solution receiving tank; 409. Anode; 411. motor; stirring bar; driving mechanism; 413a. motor; 413b. a rotary direct-acting conversion mechanism; 413c. shaft; seals; seal ring retainer (SRH); 431. seal opening; SRH opening; 423. an open-end side taper; seal side taper; cleaning the module; spin rinse dry module; a delivery device; control module; plating apparatus.

Claims

1. A substrate holder for holding a substrate having a diameter of 300mm in a plating apparatus, comprising:

a seal member that closes an outer peripheral portion of the substrate and has a first opening through which a plated surface of the substrate is exposed; and

a seal ring holder which presses the seal member and has a second opening through which the plated surface of the substrate is exposed,

the ratio of the opening diameter of the second opening to the opening diameter of the first opening, i.e., the opening diameter ratio, is in the range of 99.32% to 99.80%,

the height of the bank portion, which is formed by adding the height of the seal and the height of the seal ring holder together, is in a range of 2mm to 3mm, and the height of the seal ring holder is larger than the height of the seal.

2. The substrate holder of claim 1, wherein,

the opening diameter ratio is in a range of 99.42% to 99.59%.

3. The substrate holder according to claim 1 or 2, wherein,

the second opening of the seal ring holder has a first tapered portion on a side remote from the seal, the first tapered portion being arranged such that the diameter of the second opening becomes larger as it is further from the seal.

4. The substrate holder according to claim 1 or 2, wherein,

the second opening of the seal ring holder has a second tapered portion on a side close to the seal, the second tapered portion being arranged such that the diameter of the second opening becomes larger as it gets closer to the seal.

5. The substrate holder according to claim 1 or 2, wherein,

the second opening of the seal ring retainer has a first tapered portion on a side remote from the seal and a second tapered portion on a side near the seal,

the first tapered portion is arranged such that, as it moves further away from the seal, the diameter of the second opening becomes larger,

the second tapered portion is provided such that the diameter of the second opening becomes larger as it gets closer to the seal.

6. A substrate holder for holding a substrate having a diameter of 300mm in a plating apparatus, comprising:

the second opening of the seal ring retainer has a first tapered portion disposed on a side remote from the seal member and a second tapered portion disposed on a side near the seal member,

the first tapered portion is provided such that, as it is farther from the seal, the opening diameter of the second opening becomes larger,

the second tapered portion is provided such that, as it approaches the seal member, the opening diameter of the second opening becomes larger,

7. The substrate holder of any of claims 1, 2, 6, wherein,

the plated surface of the substrate is held downward.

8. The substrate holder of any of claims 1, 2, 6, wherein,

the plating module holds the plated surface of the substrate in an upright state.

9. A plating apparatus is provided with:

the substrate holder of any one of claims 1 to 8; and

a plating bath for the substrate holder arrangement.

10. A method for manufacturing a plating apparatus having a substrate holder holding a substrate having a size of 300mm in diameter, wherein,

the method includes a step of assembling a seal having a first opening and closing an outer peripheral portion of the substrate with a seal ring holder having a second opening and pressing the seal,

in the step, the seal ring holder and the seal are selected so that an opening diameter ratio, which is a ratio of an opening diameter of the second opening of the seal ring holder to an opening diameter of the first opening of the seal, is in a range of 99.32% or more and 99.80% or less, and so that a height of a bank formed by adding a height of the seal and a height of the seal ring holder together is in a range of 2mm or more and 3mm or less, and the height of the seal ring holder is larger than the height of the seal.