JP2008166841A - Adhesive, and semiconductor device - Google Patents
Adhesive, and semiconductor device Download PDFInfo
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- JP2008166841A JP2008166841A JP2008060262A JP2008060262A JP2008166841A JP 2008166841 A JP2008166841 A JP 2008166841A JP 2008060262 A JP2008060262 A JP 2008060262A JP 2008060262 A JP2008060262 A JP 2008060262A JP 2008166841 A JP2008166841 A JP 2008166841A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
本発明は、接着剤及び半導体装置に関し、更に詳しくは、半導体素子を支持部材（特に、銅リードフレーム）に接着してなる半導体装置がリフロー炉を通して基板上に実装されるとき、パッケージクラックが起こらないような接着剤及びその接着剤を用いて製造される信頼性の高い半導体装置に関する。 The present invention relates to an adhesive and a semiconductor device, and more specifically, when a semiconductor device in which a semiconductor element is bonded to a support member (particularly, a copper lead frame) is mounted on a substrate through a reflow furnace, package cracking occurs. The present invention relates to a highly reliable semiconductor device manufactured using such an adhesive and the adhesive.
半導体装置を製造する際、半導体素子とリードフレーム（支持部材）の接着方法としては、エポキシ樹脂、ポリイミド樹脂等の有機材料に銀粉等を分散させてペースト状態とし、これを接着剤とする方法が主に用いられている。この方法では、一般に、銀ペーストをディスペンサーやスタンピングマシンを用いてリードフレームに塗布した後、半導体素子を圧着し、加熱硬化して、半導体素子とリードフレームとを接着する。また、リードフレームの材質は、従来、鉄−ニッケルの合金である４２アロイが用いられてきた。しかし、リードフレームの熱・電気伝導性、配線基板との密着性等の点から、最近は材質が銅合金である銅リードフレームの使用の割合が大きくなってきている。 When manufacturing a semiconductor device, the semiconductor element and the lead frame (support member) can be bonded by dispersing silver powder or the like in an organic material such as epoxy resin or polyimide resin to form a paste and using this as an adhesive. Mainly used. In this method, generally, after applying a silver paste to a lead frame using a dispenser or a stamping machine, the semiconductor element is pressure-bonded and heat-cured to bond the semiconductor element and the lead frame. Conventionally, 42 alloy, which is an iron-nickel alloy, has been used as the lead frame material. However, recently, the ratio of use of a copper lead frame made of a copper alloy has been increasing in view of the thermal and electrical conductivity of the lead frame and the adhesion to the wiring board.
更に、高密度、高効率実装のため、半導体装置の実装方法は、半導体装置のリードを基板に直接半田付けする表面実装が主流となっている。この表面実装には、基板全体を赤外線などで加熱するリフローソルダリングが用いられ、パッケージは２００℃以上の高温に加熱される。この時、パッケージの内部、特に接着剤層中に水分が存在すると、この水分が気化してダイパッドと封止材の間に回り込み、パッケージにクラック（リフロークラック）が発生する。特に銅リードフレームでは、４２アロイフレームに比べリフロークラックの発生率が高く、このリフロークラックは半導体装置の信頼性を著しく低下させるため、深刻な問題・技術課題となっている。 Further, for high-density and high-efficiency mounting, a semiconductor device mounting method mainly uses surface mounting in which leads of the semiconductor device are directly soldered to a substrate. For this surface mounting, reflow soldering for heating the entire substrate with infrared rays or the like is used, and the package is heated to a high temperature of 200 ° C. or higher. At this time, if moisture exists in the inside of the package, particularly in the adhesive layer, the moisture is vaporized and wraps around between the die pad and the sealing material, and a crack (reflow crack) is generated in the package. In particular, the copper lead frame has a higher incidence of reflow cracks than the 42 alloy frame, and the reflow cracks significantly reduce the reliability of the semiconductor device, which is a serious problem / technical problem.
このような問題に対する解決策の一つとして、半導体装置全体を防湿梱包し、表面実装の直前に開封して使用する方法や、表面実装の直前に前記半導体装置を１００℃で２４時間乾燥させ、その後実装を行う方法が提案されている。また、接着剤を改良する観点から、例えば、水分吸着剤を含有する接着剤（特開平６−１８１２２７号公報）や、エポキシ基を２個以上含有するエポキシ樹脂とシリコーン変性フェノールアラルキル樹脂を含有する接着剤（特開平６−３２６１３９号公報）等が提案されている。 As a solution to such a problem, moisture-proof packaging of the entire semiconductor device, a method of opening and using immediately before surface mounting, or drying the semiconductor device at 100 ° C. for 24 hours immediately before surface mounting, After that, a method of implementation is proposed. From the viewpoint of improving the adhesive, for example, an adhesive containing a moisture adsorbent (JP-A-6-181227), an epoxy resin containing two or more epoxy groups, and a silicone-modified phenol aralkyl resin are contained. Adhesives (Japanese Patent Laid-Open No. 6-326139) have been proposed.
しかし、半導体装置の防湿梱包や乾燥を行う方法は、製造工程が長くなり、手間もかかる。また、特開平６−１８１２２７号公報や特開平６−３２６１３９号公報に提案されている接着剤を用いる方法では、リフロークラックの発生は支持部材として４２アロイリードフレームを用いた場合には低減されるものの、支持部材として銅リードフレームを用いた場合には必ずしも満足できるほど低減されない。本発明の目的は、前記の従来技術の問題を解決し、リフロークラックを発生させない接着剤、特に支持部材に銅リードフレームを用いた場合に好適な接着剤を提供することである。 However, the method of performing moisture-proof packaging and drying of the semiconductor device requires a long manufacturing process and labor. Further, in the method using an adhesive proposed in JP-A-6-181227 and JP-A-6-326139, the occurrence of reflow cracks is reduced when a 42 alloy lead frame is used as a support member. However, when a copper lead frame is used as the support member, the reduction is not always satisfactory. An object of the present invention is to solve the above-mentioned problems of the prior art and to provide an adhesive that does not generate reflow cracks, particularly an adhesive that is suitable when a copper lead frame is used as a support member.
本発明者らは、支持部材として銅リードフレームを用いた場合にも、リフロークラックを発生させない接着剤とその接着剤の有効な特性を種々検討する過程で、本発明を完成するに至った。すなわち、本発明は、支持部材に半導体素子を接着させる接着剤であって、（Ａ）揮発分が１０重量％以下、（Ｂ）ピール接着力が０．３ｋｇｆ以上、及び（Ｃ）チップ反り変化量が１５μｍ以下、である接着剤接着剤である。 The present inventors have completed the present invention in the course of variously examining an adhesive that does not generate reflow cracks and effective characteristics of the adhesive even when a copper lead frame is used as a support member. That is, the present invention is an adhesive for adhering a semiconductor element to a support member, wherein (A) the volatile content is 10% by weight or less, (B) the peel adhesive force is 0.3 kgf or more, and (C) the chip warpage change. An adhesive adhesive whose amount is 15 μm or less.
ここで、接着剤の揮発分、ピール接着力及びチップ反り変化量は、次の方法によって測定する。 Here, the volatile content of the adhesive, the peel adhesive force, and the chip warpage change amount are measured by the following methods.
接着剤の揮発分の測定：接着剤約１ｇをアルミカップに移し、秤量して接着剤の重量（Ｍ１）を求める。ついで、これを２００℃の乾燥機中で２時間加熱し、秤量して接着剤の重量（Ｍ２）を求める。 Measurement of volatile content of adhesive: About 1 g of adhesive is transferred to an aluminum cup and weighed to determine the weight (M 1 ) of the adhesive. Next, this is heated in a dryer at 200 ° C. for 2 hours and weighed to determine the weight (M 2 ) of the adhesive.
接着剤の揮発分（ｗｔ％）＝［（Ｍ２−Ｍ１）／Ｍ１］×１００
ピール接着力の測定：銅リードフレームと８ｍｍ×８ｍｍのシリコンチップを、被検接着剤を用いて１５０℃、１時間、次いで１７５℃、５時間加熱して接着させ、温度８５℃、湿度８５％に設定された恒温恒湿機中で２４時間吸湿させた後、２５０℃、２０秒加熱時の引き剥がし強さを、プッシュプルゲージを用いて測定する（図１）。
Adhesive volatile matter (wt%) = [(M 2 −M 1 ) / M 1 ] × 100
Measurement of peel adhesive strength: A copper lead frame and an 8 mm × 8 mm silicon chip were bonded using a test adhesive at 150 ° C. for 1 hour, then 175 ° C. for 5 hours, and the temperature was 85 ° C. and the humidity was 85%. After moisture absorption for 24 hours in a thermo-hygrostat set to, the peel strength when heated at 250 ° C. for 20 seconds is measured using a push-pull gauge (FIG. 1).
チップ反り変化量の測定：銅リードフレームと５ｍｍ×１３ｍｍのシリコンチップを、被検接着剤を用いて１５０℃、１時間加熱して接着させ、表面粗さ計を用い直線状に１１ｍｍスキャンし、チップのベースラインからの最大高さ（ｔ１）を求める。ついで、これを１７５℃の乾燥機中で５時間加熱し、表面粗さ計を用い直線状に１１ｍｍスキャンし、チップのベースラインからの最大高さ（ｔ２）を求める。ｔ２−ｔ１をチップ反り変化量とする。 Measurement of chip warpage change amount: A copper lead frame and a silicon chip of 5 mm × 13 mm were bonded by heating at 150 ° C. for 1 hour using a test adhesive, and linearly scanning 11 mm using a surface roughness meter, Determine the maximum height (t 1 ) from the baseline of the chip. Then, this is heated in a dryer at 175 ° C. for 5 hours, and is scanned 11 mm linearly using a surface roughness meter, and the maximum height (t 2 ) from the base line of the chip is obtained. Let t 2 -t 1 be the amount of change in chip warpage.
また、本発明は、半導体素子を上記接着剤を用いて支持部材に接着してなる半導体装置にも関する。 The present invention also relates to a semiconductor device in which a semiconductor element is bonded to a support member using the adhesive.
請求項１の接着剤は、半導体素子と支持部材との接着剤として使用でき、半田リフロー時のリフロークラックの発生は低減される。支持部材としては、銅リードフレームが特に好適である。請求項２の半導体装置は、半田リフロー時のリフロークラックの発生が低減され、信頼性が高い。
The adhesive of
本発明の接着剤の揮発分は１０重量％以下であり、好ましくは５重量％以下である。揮発分が１０重量％を越えると、支持部材と半導体装置を接着させた後に接着剤層中にボイドが発生し、リフロークラックの原因となるので好ましくない。本発明の接着剤のピール接着力は０．３ｋｇｆ以上であり、好ましくは０．５ｋｇｆ以上である。ピール接着力が０．３ｋｇｆ未満では、接着剤と半導体素子、又は接着剤と支持部材に剥離が発生し、リフロークラックの原因となるので好ましくない。本発明の接着剤を用いた場合のチップ反り変化量は１５μｍ以下であり、好ましくは１２μｍ以下である。チップ反り変化量が１５μｍを越えると、接着剤層の熱応力が大きくなり、耐リフロークラック性を低下させるので好ましくない。 The volatile content of the adhesive of the present invention is 10% by weight or less, preferably 5% by weight or less. If the volatile content exceeds 10% by weight, voids are generated in the adhesive layer after the support member and the semiconductor device are bonded, and this causes reflow cracks. The peel adhesive strength of the adhesive of the present invention is 0.3 kgf or more, preferably 0.5 kgf or more. If the peel adhesive strength is less than 0.3 kgf, peeling occurs between the adhesive and the semiconductor element, or between the adhesive and the support member, which causes a reflow crack. When the adhesive of the present invention is used, the chip warpage variation is 15 μm or less, and preferably 12 μm or less. If the amount of change in chip warpage exceeds 15 μm, the thermal stress of the adhesive layer becomes large and the reflow crack resistance is lowered, which is not preferable.
前記（Ａ）〜（Ｃ）の特性を満たす接着剤としては、例えば、次のような組成の樹脂がある。 Examples of the adhesive satisfying the characteristics (A) to (C) include resins having the following composition.
（ａ）重合可能なエチレン性炭素−炭素二重結合を有する化合物（例えば、アクリル酸メチル、アクリル酸エチルなどのアクリル酸系モノマー、メタクリル酸メチル、メタクリル酸エチルなどのメタクリル酸系モノマー、スチレン、ビニルトルエンなどのビニル系モノマー等）：３０〜８０重量部、（ｂ）反応性エラストマ（例えば、カルボキシル基両末端ブタジエン−アクリロニトリル共重合体、エポキシ基両末端ブタジエン−アクリロニトリル共重合体等）：０〜６０重量部、及び（ｃ）熱で硬化して網目状高分子を生成しうる反応性化合物（例えば、エポキシ樹脂、フェノール樹脂、ビスマレイミド樹脂、シアナート樹脂等）：５〜３０重量部。なお、上記（ａ）、（ｂ）及び（ｃ）を含む有機材料の合計量は１００（重量部）とする。 (A) A compound having a polymerizable ethylenic carbon-carbon double bond (for example, acrylic acid monomers such as methyl acrylate and ethyl acrylate, methacrylic acid monomers such as methyl methacrylate and ethyl methacrylate, styrene, Vinyl monomers such as vinyl toluene): 30 to 80 parts by weight, (b) reactive elastomer (for example, carboxyl group both-end butadiene-acrylonitrile copolymer, epoxy group both-end butadiene-acrylonitrile copolymer, etc.): 0 -60 parts by weight, and (c) a reactive compound that can be cured by heat to form a network polymer (for example, epoxy resin, phenol resin, bismaleimide resin, cyanate resin, etc.): 5-30 parts by weight. The total amount of the organic material including the above (a), (b) and (c) is 100 (parts by weight).
上記組成の接着剤には、前記（Ａ）〜（Ｃ）の特性を越えない範囲で、銀粉、シリカ粉、アルミナ粉等の充填材を加えることができる。銀粉はフレーク状、樹枝状、球形、不定形等の銀粉が使用でき、シルベストＴＣＧ−１（徳力化学研究所製）、シルフレークＡｇｃ−Ａ（福田金属箔粉工業社製）等の市販品が使用できる。銀粉を加える場合の使用量は、上記接着剤１００重量部に対して９００重量部以下（接着剤全量の９０重量％以下）、更に好ましくは５６７重量部以下（接着剤全量の８５重量％以下）である。 A filler such as silver powder, silica powder, and alumina powder can be added to the adhesive having the above composition within a range not exceeding the characteristics (A) to (C). Silver powder can be used in the form of flakes, dendrites, spheres, irregular shapes, etc., and commercially available products such as Sylbest TCG-1 (manufactured by Tokuru Chemical Laboratory), Sylflakes Agc-A (manufactured by Fukuda Metal Foil Powder Industry Co., Ltd.) are used. it can. The amount used when adding silver powder is 900 parts by weight or less (90% by weight or less of the total amount of the adhesive), more preferably 567 parts by weight or less (85% by weight or less of the total amount of the adhesive) with respect to 100 parts by weight of the adhesive. It is.
本発明の接着剤が特に好適に使用できる支持部材は銅リードフレームであるが、４２アロイリードフレーム、絶縁基板、配線付き基板等にも使用できる。銅リードフレームとしては、例えば、ＭＦ２０２（三菱電機製）、ＥＦＴＥＣ６４Ｔ（古河電気工業製）等がある。 The support member to which the adhesive of the present invention can be particularly preferably used is a copper lead frame, but it can also be used for a 42 alloy lead frame, an insulating substrate, a substrate with wiring, and the like. Examples of the copper lead frame include MF202 (manufactured by Mitsubishi Electric) and EFTEC64T (manufactured by Furukawa Electric).
本発明の接着剤を用いた半導体装置は、ディスペンス法、スタンピング法、スクリーン印刷等により銅リードフレーム等の支持部材に本発明の接着剤を塗布し、これに半導体素子を載置し、熱風循環式乾燥機、ヒートブロック等の加熱装置を用いて加熱硬化させて半導体素子と支持部材とを接着させ、リードフレームと半導体素子とを金線等のワイヤで接続し、その後、エポキシ樹脂等の封止材で封止して、製造される。このようにして製造される半導体装置の一例を図２に示す。 The semiconductor device using the adhesive of the present invention is coated with the adhesive of the present invention on a support member such as a copper lead frame by the dispensing method, stamping method, screen printing, etc., the semiconductor element is placed on this, and the hot air circulation Heating and curing using a heating device such as a dryer, heat block, etc. to bond the semiconductor element and the support member, connect the lead frame and the semiconductor element with a wire such as a gold wire, and then seal the epoxy resin or the like. It is manufactured by sealing with a stopper. An example of the semiconductor device manufactured in this way is shown in FIG.
以下、本発明を実施例により説明する。 Hereinafter, the present invention will be described with reference to examples.
（実施例１）
アクリル酸ノニルフェノキシポリプロピレングリコール ３０ｇ
スチレン ２５ｇ
エポキシ末端ポリブタジエン−アクリロニトリル共重合体（宇部興産製 ＥＴＢ
Ｎ１３００×４０） ２５ｇ
クレゾールノボラック型エポキシ（東都化成製 ＹＤＣＮ−７０２Ｓ）
５ｇ
フェノールノボラック（明和化成製 Ｈ−１） ５ｇ
２−フェニル−４−メチルイミダゾール ０．２ｇ
ターシャリブチルパーオキシベンゾエート １．６ｇ
銀粉 ２１０ｇ
を、らいかい機により混合し、接着剤を得た。この接着剤についての揮発分、ピール接着力及びチップ反り変化量の各特性を表１に示す。測定方法は前述した通り。
(Example 1)
30 g nonylphenoxy polypropylene glycol acrylate
Styrene 25g
Epoxy-terminated polybutadiene-acrylonitrile copolymer (ETB manufactured by Ube Industries)
N1300 × 40) 25g
Cresol novolac type epoxy (YDCN-702S manufactured by Toto Kasei)
5g
Phenol novolak (M-1 Kasei H-1) 5g
2-Phenyl-4-methylimidazole 0.2g
Tertiary butyl peroxybenzoate 1.6g
210g of silver powder
Were mixed with a rough machine to obtain an adhesive. Table 1 shows the characteristics of the adhesive, such as volatile content, peel adhesive strength, and chip warpage variation. The measurement method is as described above.
（実施例２）
アクリル酸ラウリル ２０ｇ
スチレン １５ｇ
エポキシ末端ポリブタジエン−アクリロニトリル共重合体（宇部興産製 ＥＴＢ
Ｎ１３００×４０） １５ｇ
ビスフェノールＡ型エポキシ（油化シェルエポキシ製 エピコート１００１）
５ｇ
フェノールノボラック（明和化成製 Ｈ−１） ５ｇ
２−フェニル−４−メチルイミダゾール ０．２ｇ
ターシャリブチルパーオキシベンゾエート １．６ｇ
銀粉 ２１０ｇ
を、らいかい機により混合し、接着剤を得た。この接着剤についての揮発分、ピール接着力及びチップ反り変化量の各特性を表１に示す。
(Example 2)
20g lauryl acrylate
Styrene 15g
Epoxy-terminated polybutadiene-acrylonitrile copolymer (ETB manufactured by Ube Industries)
N1300 × 40) 15g
Bisphenol A type epoxy (Epicoat 1001 made by oil-based shell epoxy)
5g
Phenol novolak (M-1 Kasei H-1) 5g
2-Phenyl-4-methylimidazole 0.2g
Tertiary butyl peroxybenzoate 1.6g
210g of silver powder
Were mixed with a rough machine to obtain an adhesive. Table 1 shows the characteristics of the adhesive, such as volatile content, peel adhesive strength, and chip warpage variation.
（実施例３）
アクリル酸イソボニル ２０ｇ
スチレン １５ｇ
エポキシ末端ポリブタジエン−アクリロニトリル共重合体 （宇部興産製 ＥＴＢ
Ｎ１３００×４０） １５ｇ
ビス（４−シアノフェニル−１−（１−メチルエチリデン））ベンゼン
１０ｇ
ターシャリブチルパーオキシベンゾエート １．６ｇ
ナフテン酸コバルト ０．２ｇ
ノニルフェノール １．８ｇ
銀粉 ２１０ｇ
を、らいかい機により混合し、接着剤を得た。この接着剤についての揮発分、ピール接着力及びチップ反り変化量の各特性を表１に示す。
(Example 3)
Isobonyl acrylate 20g
Styrene 15g
Epoxy-terminated polybutadiene-acrylonitrile copolymer (ETB manufactured by Ube Industries)
N1300 × 40) 15g
Bis (4-cyanophenyl-1- (1-methylethylidene)) benzene
10g
Tertiary butyl peroxybenzoate 1.6g
Cobalt naphthenate 0.2g
Nonylphenol 1.8g
210g of silver powder
Were mixed with a rough machine to obtain an adhesive. Table 1 shows the characteristics of the adhesive, such as volatile content, peel adhesive strength, and chip warpage variation.
（実施例４）
メタクリル酸ラウリル ２０ｇ
スチレン １５ｇ
エポキシ末端ポリブタジエン−アクリロニトリル共重合体 （宇部興産製 ＥＴＢ
Ｎ１３００×４０） １５ｇ
ビスマレイミドジフェニルメタン １０ｇ
ターシャリブチルパーオキシベンゾエート １．６ｇ
銀粉 ２１０ｇ
を、らいかい機により混合し、接着剤を得た。この接着剤についての揮発分、ピール接着力及びチップ反り変化量の各特性を表１に示す。
Example 4
20g lauryl methacrylate
Styrene 15g
Epoxy-terminated polybutadiene-acrylonitrile copolymer (ETB manufactured by Ube Industries)
N1300 × 40) 15g
Bismaleimide diphenylmethane 10g
Tertiary butyl peroxybenzoate 1.6g
210g of silver powder
Were mixed with a rough machine to obtain an adhesive. Table 1 shows the characteristics of the adhesive, such as volatile content, peel adhesive strength, and chip warpage variation.
（比較例１）
クレゾールノボラック型エポキシ（東都化成製 ＹＤＣＮ−７０２Ｓ） ３０ｇ
フェノールノボラック（明和化成製 Ｈ−１） １０ｇ
２−フェニル−４−メチルイミダゾール ０．２ｇ
銀粉 １００ｇ
フェニルグリシジルエーテル １０ｇ
を、らいかい機により混合し、接着剤を得た。この接着剤についての揮発分、ピール接着力及びチップ反り変化量の各特性を表１に示す。
(Comparative Example 1)
Cresol novolac type epoxy (YDCN-702S manufactured by Toto Kasei) 30g
Phenol novolak (M-1 Kasei H-1) 10g
2-Phenyl-4-methylimidazole 0.2g
Silver powder 100g
Phenyl glycidyl ether 10g
Were mixed with a rough machine to obtain an adhesive. Table 1 shows the characteristics of the adhesive, such as volatile content, peel adhesive strength, and chip warpage variation.
（比較例２）
クレゾールノボラック型エポキシ（東都化成製 ＹＤＣＮ−７０２Ｓ） ３０ｇ
カルボキシル末端ポリブタジエンーアクリロニトリル共重合体（宇部興産製 ＣＴＢ
Ｎ１３００×９） ３０ｇ
フェノールノボラック（明和化成製 Ｈ−１） ５ｇ
２−フェニル−４−メチルイミダゾール ０．２ｇ
銀粉 １００ｇ
酢酸ブチルセロソルブ １０ｇ
を、らいかい機により混合し、接着剤を得た。この接着剤についての揮発分、ピール接着力及びチップ反り変化量の各特性を表１に示す。
(Comparative Example 2)
Cresol novolac type epoxy (YDCN-702S manufactured by Toto Kasei) 30g
Carboxyl-terminated polybutadiene-acrylonitrile copolymer (CTB manufactured by Ube Industries)
N1300 × 9) 30g
Phenol novolak (M-1 Kasei H-1) 5g
2-Phenyl-4-methylimidazole 0.2g
Silver powder 100g
Butyl acetate cellosolve 10g
Were mixed with a rough machine to obtain an adhesive. Table 1 shows the characteristics of the adhesive, such as volatile content, peel adhesive strength, and chip warpage variation.
（比較例３）
クレゾールノボラック型エポキシ（東都化成製 ＹＤＣＮ−７０２Ｓ） ３０ｇ
カルボキシル末端ポリブタジエン−アクリロニトリル共重合体（宇部興産製 ＣＴＢ
Ｎ１３００×９） ３０ｇ
フェノールノボラック（明和化成製 Ｈ−１） ５ｇ
２−フェニル−４メチルイミダゾール ０．２ｇ
銀粉 １００ｇ
フェニルグリシジルエーテル １０ｇ
を、らいかい機により混合し、接着剤を得た。この接着剤についての揮発分、ピール接着力及びチップ反り変化量の各特性を表１に示す。
(Comparative Example 3)
Cresol novolac type epoxy (YDCN-702S manufactured by Toto Kasei) 30g
Carboxyl-terminated polybutadiene-acrylonitrile copolymer (CTB manufactured by Ube Industries)
N1300 × 9) 30g
Phenol novolak (M-1 Kasei H-1) 5g
2-phenyl-4-methylimidazole 0.2g
Silver powder 100g
Phenyl glycidyl ether 10g
Were mixed with a rough machine to obtain an adhesive. Table 1 shows the characteristics of the adhesive, such as volatile content, peel adhesive strength, and chip warpage variation.
[表１]
表１ 接着剤の特性
実施例の接着剤 比較例の接着剤
特性 Ｎｏ.１ Ｎｏ.２ Ｎｏ.３ Ｎｏ.４ Ｎｏ.１ Ｎｏ.２ Ｎｏ.３
揮発分 ４ ５ ４ ３ ５ １３ ２
（ｗｔ％）
ピール接着力 ０.８ ０.６ ０.９ ０.５ ０.６ ０.７ ０.０５
（kgf/chip）
チップ反り ８ １１ １０ １２ ２０ １０ １
（μｍ）
半田リフロークラック評価試験
実施例１〜４および比較例１〜３で各々得られた接着剤を用いて、以下に示すような半田リフロークラック試験を行った。
[Table 1]
Table 1 Adhesive properties
Example Adhesive Comparative Example Adhesive
No.1 No.2 No.3 No.4 No.1 No.2 No.3
Volatiles 4 5 4 3 5 13 2
(Wt%)
Peel adhesive strength 0.8 0.6 0.9 0.5 0.5 0.7 0.05
(Kgf / chip)
Chip warpage 8 11 10 12 20 10 1
(Μm)
Solder reflow crack evaluation test Using the adhesives obtained in Examples 1 to 4 and Comparative Examples 1 to 3, the following solder reflow crack test was performed.
半田リフロークラック試験方法：銅リードフレームと８ｍｍ×１０ｍｍ×０．３ｍｍのシリコンチップを上記接着剤を用いて１５０℃、１時間加熱して接着させた後、封止材（日立化成製 ＣＥＬ−４６２０）により封止し、半田リフロー試験用パッケージ（ＱＦＰ、１４ｍｍ×２０ｍｍ×１．４ｍｍ）を組み立てた。そのパッケージを、温度８５℃、湿度８５％に設定された恒温恒湿機中で４８時間吸湿させた。その後、２４０℃、１０秒のＩＲリフローを行い、パッケージクラックの発生数を顕微鏡（倍率：１５倍）で観察した。試験の結果、実施例１〜４の接着剤を使用したパッケージはクラックの発生が見られなかったが、比較例１〜３の接着剤を使用したパッケージは全数にクラックが発生していた。 Solder reflow crack test method: After bonding a copper lead frame and an 8 mm × 10 mm × 0.3 mm silicon chip by heating at 150 ° C. for 1 hour using the above adhesive, a sealing material (CEL-4620 manufactured by Hitachi Chemical Co., Ltd.) ) And a solder reflow test package (QFP, 14 mm × 20 mm × 1.4 mm) was assembled. The package was absorbed for 48 hours in a thermo-hygrostat set to a temperature of 85 ° C. and a humidity of 85%. Thereafter, IR reflow was performed at 240 ° C. for 10 seconds, and the number of occurrences of package cracks was observed with a microscope (magnification: 15 times). As a result of the test, cracks did not occur in the packages using the adhesives of Examples 1 to 4, but cracks occurred in all the packages using the adhesives of Comparative Examples 1 to 3.
[表２]
表２ 半田リフロークラック評価試験
実施例の接着剤使用 比較例の接着剤使用
特性 Ｎｏ.１ Ｎｏ.２ Ｎｏ.３ Ｎｏ.４ Ｎｏ.１ Ｎｏ.２ Ｎｏ.３
クラック ０／５ ０／５ ０／５ ０／５ ５／５ ５／５ ５／５
（発生数）
[Table 2]
Table 2 Solder reflow crack evaluation test
Use of adhesives in comparative examples Use of adhesives in comparative examples
No.1 No.2 No.3 No.4 No.1 No.2 No.3
Crack 0/5 0/5 0/5 0/5 5/5 5/5 5/5
(The number of occurrences)
１．半導体素子 ２．接着剤
３．銅リードフレーム ４．プッシュプルゲージ
５．熱盤
１１．半導体素子 １２．接着剤
１３．リードフレーム １４．ワイヤ
１５．封止材
1. Semiconductor element 2. Adhesive Copper lead frame 4. Push-pull gauge 5. Hot plate 11.
Claims (3)
（ａ）重合可能なエチレン性炭素−炭素二重結合を有する化合物、
（ｂ）エポキシ基を末端に有する反応性エラストマ、及び
（ｃ）エポキシ樹脂、フェノール樹脂、ビスマレイミド樹脂、シアナート樹脂から選ばれる少なくとも１種以上の樹脂、
を含有し、揮発分が１０重量％以下である接着剤。 An adhesive for bonding a semiconductor element to a support member,
(A) a compound having a polymerizable ethylenic carbon-carbon double bond,
(B) a reactive elastomer having an epoxy group at the end, and (c) at least one resin selected from an epoxy resin, a phenol resin, a bismaleimide resin, and a cyanate resin,
An adhesive having a volatile content of 10% by weight or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008060262A JP2008166841A (en) | 2008-03-10 | 2008-03-10 | Adhesive, and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008060262A JP2008166841A (en) | 2008-03-10 | 2008-03-10 | Adhesive, and semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001345955A Division JP2002194323A (en) | 2001-11-12 | 2001-11-12 | Bonding agent and semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| JP2008166841A true JP2008166841A (en) | 2008-07-17 |
Family
ID=39695753
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008060262A Withdrawn JP2008166841A (en) | 2008-03-10 | 2008-03-10 | Adhesive, and semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP2008166841A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009203450A (en) * | 2008-01-30 | 2009-09-10 | Tokyo Ohka Kogyo Co Ltd | Adhesive composition and adhesive film |
| JP2010189469A (en) * | 2009-02-16 | 2010-09-02 | Hitachi Chem Co Ltd | Adhesive composition, adhesive sheet, and semiconductor device |
| US8901235B2 (en) | 2008-06-17 | 2014-12-02 | Tokyo Ohka Kogyo Co., Ltd. | Adhesive composition, film adhesive, and heat treatment method |
| JP6566177B1 (en) * | 2018-03-01 | 2019-08-28 | 住友ベークライト株式会社 | Paste adhesive composition and semiconductor device |
| WO2019167824A1 (en) * | 2018-03-01 | 2019-09-06 | 住友ベークライト株式会社 | Paste adhesive composition and semiconductor device |
-
2008
- 2008-03-10 JP JP2008060262A patent/JP2008166841A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009203450A (en) * | 2008-01-30 | 2009-09-10 | Tokyo Ohka Kogyo Co Ltd | Adhesive composition and adhesive film |
| US8901235B2 (en) | 2008-06-17 | 2014-12-02 | Tokyo Ohka Kogyo Co., Ltd. | Adhesive composition, film adhesive, and heat treatment method |
| US8901234B2 (en) | 2008-06-17 | 2014-12-02 | Tokyo Ohka Kogyo Co., Ltd. | Adhesive composition |
| JP2010189469A (en) * | 2009-02-16 | 2010-09-02 | Hitachi Chem Co Ltd | Adhesive composition, adhesive sheet, and semiconductor device |
| JP6566177B1 (en) * | 2018-03-01 | 2019-08-28 | 住友ベークライト株式会社 | Paste adhesive composition and semiconductor device |
| WO2019167824A1 (en) * | 2018-03-01 | 2019-09-06 | 住友ベークライト株式会社 | Paste adhesive composition and semiconductor device |
| CN111801397B (en) * | 2018-03-01 | 2021-08-20 | 住友电木株式会社 | Paste adhesive composition and semiconductor device |
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