JP2002194323A - Bonding agent and semiconductor device - Google Patents
Bonding agent and semiconductor deviceInfo
- Publication number
- JP2002194323A JP2002194323A JP2001345955A JP2001345955A JP2002194323A JP 2002194323 A JP2002194323 A JP 2002194323A JP 2001345955 A JP2001345955 A JP 2001345955A JP 2001345955 A JP2001345955 A JP 2001345955A JP 2002194323 A JP2002194323 A JP 2002194323A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- bonding agent
- semiconductor device
- supporting member
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、接着剤及び半導体
装置に関し、更に詳しくは、半導体素子を支持部材（特
に、銅リードフレーム）に接着してなる半導体装置がリ
フロー炉を通して基板上に実装されるとき、パッケージ
クラックが起こらないような接着剤及びその接着剤を用
いて製造される信頼性の高い半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive and a semiconductor device, and more particularly, to a semiconductor device in which a semiconductor element is bonded to a supporting member (particularly, a copper lead frame) and mounted on a substrate through a reflow furnace. The present invention relates to an adhesive that does not cause a package crack and a highly reliable semiconductor device manufactured using the adhesive.
【０００２】[0002]
【従来の技術】半導体装置を製造する際、半導体素子と
リードフレーム（支持部材）の接着方法としては、エポ
キシ樹脂、ポリイミド樹脂等の有機材料に銀粉等を分散
させてペースト状態とし、これを接着剤とする方法が主
に用いられている。この方法では、一般に、銀ペースト
をディスペンサーやスタンピングマシンを用いてリード
フレームに塗布した後、半導体素子を圧着し、加熱硬化
して、半導体素子とリードフレームとを接着する。ま
た、リードフレームの材質は、従来、鉄−ニッケルの合
金である４２アロイが用いられてきた。しかし、リード
フレームの熱・電気伝導性、配線基板との密着性等の点
から、最近は材質が銅合金である銅リードフレームの使
用の割合が大きくなってきている。2. Description of the Related Art When manufacturing a semiconductor device, as a method of bonding a semiconductor element and a lead frame (supporting member), silver powder or the like is dispersed in an organic material such as an epoxy resin or a polyimide resin to form a paste, and this is bonded. The method used as an agent is mainly used. In this method, generally, after a silver paste is applied to a lead frame using a dispenser or a stamping machine, the semiconductor element is pressed and heated and cured to bond the semiconductor element and the lead frame. As a material for the lead frame, a 42 alloy, which is an alloy of iron and nickel, has been conventionally used. However, the use rate of copper lead frames made of a copper alloy has recently increased in view of the thermal and electrical conductivity of the lead frames and the adhesion to the wiring board.
【０００３】更に、高密度、高効率実装のため、半導体
装置の実装方法は、半導体装置のリードを基板に直接半
田付けする表面実装が主流となっている。この表面実装
には、基板全体を赤外線などで加熱するリフローソルダ
リングが用いられ、パッケージは２００℃以上の高温に
加熱される。この時、パッケージの内部、特に接着剤層
中に水分が存在すると、この水分が気化してダイパッド
と封止材の間に回り込み、パッケージにクラック（リフ
ロークラック）が発生する。特に銅リードフレームで
は、４２アロイフレームに比べリフロークラックの発生
率が高く、このリフロークラックは半導体装置の信頼性
を著しく低下させるため、深刻な問題・技術課題となっ
ている。Further, for high-density and high-efficiency mounting, a semiconductor device mounting method mainly uses surface mounting in which leads of the semiconductor device are directly soldered to a substrate. For this surface mounting, reflow soldering for heating the entire substrate with infrared rays or the like is used, and the package is heated to a high temperature of 200 ° C. or more. At this time, if moisture is present inside the package, particularly in the adhesive layer, the moisture is vaporized and goes around between the die pad and the sealing material, and cracks (reflow cracks) occur in the package. In particular, in the case of a copper lead frame, the occurrence rate of reflow cracks is higher than that of a 42 alloy frame, and this reflow crack significantly lowers the reliability of the semiconductor device.
【０００４】このような問題に対する解決策の一つとし
て、半導体装置全体を防湿梱包し、表面実装の直前に開
封して使用する方法や、表面実装の直前に前記半導体装
置を１００℃で２４時間乾燥させ、その後実装を行う方
法が提案されている。また、接着剤を改良する観点か
ら、例えば、水分吸着剤を含有する接着剤（特開平６−
１８１２２７号公報）や、エポキシ基を２個以上含有す
るエポキシ樹脂とシリコーン変性フェノールアラルキル
樹脂を含有する接着剤（特開平６−３２６１３９号公
報）等が提案されている。One of the solutions to such a problem is a method of packing the entire semiconductor device in a moisture-proof package and opening it just before surface mounting, or using the semiconductor device at 100 ° C. for 24 hours just before surface mounting. A method of drying and then mounting is proposed. From the viewpoint of improving the adhesive, for example, an adhesive containing a moisture adsorbent (Japanese Patent Laid-Open Publication No.
181227) and an adhesive containing an epoxy resin containing two or more epoxy groups and a silicone-modified phenol aralkyl resin (JP-A-6-326139).
【０００５】[0005]
【発明が解決しようとする課題】しかし、半導体装置の
防湿梱包や乾燥を行う方法は、製造工程が長くなり、手
間もかかる。また、特開平６−１８１２２７号公報や特
開平６−３２６１３９号公報に提案されている接着剤を
用いる方法では、リフロークラックの発生は支持部材と
して４２アロイリードフレームを用いた場合には低減さ
れるものの、支持部材として銅リードフレームを用いた
場合には必ずしも満足できるほど低減されない。本発明
の目的は、前記の従来技術の問題を解決し、リフローク
ラックを発生させない接着剤、特に支持部材に銅リード
フレームを用いた場合に好適な接着剤を提供することで
ある。However, the method of performing moisture-proof packing and drying of a semiconductor device requires a long manufacturing process and is troublesome. In the method using an adhesive proposed in JP-A-6-181227 or JP-A-6-326139, the occurrence of reflow cracks is reduced when a 42 alloy lead frame is used as a support member. However, when a copper lead frame is used as a support member, the reduction is not always satisfactory. SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art and to provide an adhesive which does not cause reflow cracks, particularly an adhesive which is suitable when a copper lead frame is used for a support member.
【０００６】[0006]
【課題を解決するための手段】本発明者らは、支持部材
として銅リードフレームを用いた場合にも、リフローク
ラックを発生させない接着剤とその接着剤の有効な特性
を種々検討する過程で、本発明を完成するに至った。す
なわち、本発明は、支持部材に半導体素子を接着させる
接着剤であって、（Ａ）揮発分が１０重量％以下、
（Ｂ）ピール接着力が０．３ｋｇｆ以上、及び（Ｃ）チ
ップ反り変化量が１５μｍ以下、である接着剤接着剤で
ある。Means for Solving the Problems In the process of variously examining an adhesive which does not cause reflow crack even when a copper lead frame is used as a support member and effective characteristics of the adhesive, The present invention has been completed. That is, the present invention relates to an adhesive for bonding a semiconductor element to a support member, wherein (A) a volatile component is 10% by weight or less;
(B) An adhesive adhesive having a peel adhesive force of 0.3 kgf or more, and (C) a tip warpage change amount of 15 μm or less.
【０００７】ここで、接着剤の揮発分、ピール接着力及
びチップ反り変化量は、次の方法によって測定する。接
着剤の揮発分の測定：接着剤約１ｇをアルミカップに移
し、秤量して接着剤の重量（Ｍ1）を求める。ついで、
これを２００℃の乾燥機中で２時間加熱し、秤量して接
着剤の重量（Ｍ2）を求める。 接着剤の揮発分（ｗｔ％）＝［（Ｍ2−Ｍ1）／Ｍ1］×
１００Here, the volatile content of the adhesive, the peel adhesive strength, and the amount of change in chip warpage are measured by the following methods. Measurement of the volatile content of the adhesive: about 1 g of the adhesive is transferred to an aluminum cup and weighed to determine the weight (M 1 ) of the adhesive. Then
This is heated in a drier at 200 ° C. for 2 hours and weighed to determine the weight (M 2 ) of the adhesive. Volatile content of adhesive (wt%) = [(M 2 −M 1 ) / M 1 ] ×
100
【０００８】ピール接着力の測定：銅リードフレームと
８ｍｍ×８ｍｍのシリコンチップを、被検接着剤を用い
て１５０℃、１時間、次いで１７５℃、５時間加熱して
接着させ、温度８５℃、湿度８５％に設定された恒温恒
湿機中で２４時間吸湿させた後、２５０℃、２０秒加熱
時の引き剥がし強さを、プッシュプルゲージを用いて測
定する（図１）。Measurement of peel adhesive strength: A copper lead frame and an 8 mm × 8 mm silicon chip were bonded by heating at 150 ° C. for 1 hour, then at 175 ° C. for 5 hours using an adhesive to be tested. After absorbing moisture for 24 hours in a thermo-hygrostat set at a humidity of 85%, the peel strength at the time of heating at 250 ° C. for 20 seconds is measured using a push-pull gauge (FIG. 1).
【０００９】チップ反り変化量の測定：銅リードフレー
ムと５ｍｍ×１３ｍｍのシリコンチップを、被検接着剤
を用いて１５０℃、１時間加熱して接着させ、表面粗さ
計を用い直線状に１１ｍｍスキャンし、チップのベース
ラインからの最大高さ(ｔ1)を求める。ついで、これを
１７５℃の乾燥機中で５時間加熱し、表面粗さ計を用い
直線状に１１ｍｍスキャンし、チップのベースラインか
らの最大高さ（ｔ2）を求める。ｔ2−ｔ1をチップ反り
変化量とする。Measurement of chip warpage change amount: A copper lead frame and a 5 mm × 13 mm silicon chip are adhered by heating at 150 ° C. for 1 hour using a test adhesive, and then linearly measuring 11 mm using a surface roughness meter. Scan and determine the maximum height (t 1 ) of the chip from the baseline. Next, this is heated in a dryer at 175 ° C. for 5 hours, and linearly scanned 11 mm using a surface roughness meter to determine the maximum height (t 2 ) of the chip from the baseline. Let t 2 −t 1 be the amount of change in chip warpage.
【００１０】また、本発明は、半導体素子を上記接着剤
を用いて支持部材に接着してなる半導体装置にも関す
る。[0010] The present invention also relates to a semiconductor device in which a semiconductor element is bonded to a supporting member using the above-mentioned adhesive.
【００１１】[0011]
【発明の実施の形態】本発明の接着剤の揮発分は１０重
量％以下であり、好ましくは５重量％以下である。揮発
分が１０重量％を越えると、支持部材と半導体装置を接
着させた後に接着剤層中にボイドが発生し、リフローク
ラックの原因となるので好ましくない。本発明の接着剤
のピール接着力は０．３ｋｇｆ以上であり、好ましくは
０．５ｋｇｆ以上である。ピール接着力が０．３ｋｇｆ
未満では、接着剤と半導体素子、又は接着剤と支持部材
に剥離が発生し、リフロークラックの原因となるので好
ましくない。本発明の接着剤を用いた場合のチップ反り
変化量は１５μｍ以下であり、好ましくは１２μｍ以下
である。チップ反り変化量が１５μｍを越えると、接着
剤層の熱応力が大きくなり、耐リフロークラック性を低
下させるので好ましくない。DESCRIPTION OF THE PREFERRED EMBODIMENTS The adhesive of the present invention has a volatile content of 10% by weight or less, preferably 5% by weight or less. If the volatile content exceeds 10% by weight, voids are generated in the adhesive layer after the supporting member and the semiconductor device are bonded, which causes a reflow crack, which is not preferable. The adhesive strength of the adhesive of the present invention is 0.3 kgf or more, preferably 0.5 kgf or more. 0.3kgf peel adhesion
If it is less than 5, the adhesive and the semiconductor element, or the adhesive and the supporting member are separated, which is not preferable because it causes a reflow crack. The amount of change in chip warpage when the adhesive of the present invention is used is 15 μm or less, and preferably 12 μm or less. If the amount of change in the chip warp exceeds 15 μm, the thermal stress of the adhesive layer increases, and the reflow crack resistance is undesirably reduced.
【００１２】前記（Ａ）〜（Ｃ）の特性を満たす接着剤
としては、例えば、次のような組成の樹脂がある。 （ａ）重合可能なエチレン性炭素−炭素二重結合を有す
る化合物（例えば、アクリル酸メチル、アクリル酸エチ
ルなどのアクリル酸系モノマー、メタクリル酸メチル、
メタクリル酸エチルなどのメタクリル酸系モノマー、ス
チレン、ビニルトルエンなどのビニル系モノマー等）：
３０〜８０重量部、（ｂ）反応性エラストマ（例えば、
カルボキシル基両末端ブタジエン−アクリロニトリル共
重合体、エポキシ基両末端ブタジエン−アクリロニトリ
ル共重合体等）：０〜６０重量部、及び（ｃ）熱で硬化
して網目状高分子を生成しうる反応性化合物（例えば、
エポキシ樹脂、フェノール樹脂、ビスマレイミド樹脂、
シアナート樹脂等）：５〜３０重量部。なお、上記
（ａ）、（ｂ）及び（ｃ）を含む有機材料の合計量は１
００（重量部）とする。The adhesive satisfying the above-mentioned characteristics (A) to (C) includes, for example, a resin having the following composition. (A) a compound having a polymerizable ethylenic carbon-carbon double bond (for example, acrylic monomers such as methyl acrylate and ethyl acrylate, methyl methacrylate,
Methacrylic monomers such as ethyl methacrylate, vinyl monomers such as styrene and vinyltoluene, etc.):
30 to 80 parts by weight, (b) a reactive elastomer (for example,
Carboxyl-group-terminal butadiene-acrylonitrile copolymer, epoxy-group-terminal butadiene-acrylonitrile copolymer): 0 to 60 parts by weight, and (c) a reactive compound which can be cured by heat to form a network polymer (For example,
Epoxy resin, phenol resin, bismaleimide resin,
Cyanate resin, etc.): 5 to 30 parts by weight. Note that the total amount of the organic materials containing the above (a), (b) and (c) is 1
00 (parts by weight).
【００１３】上記組成の接着剤には、前記（Ａ）〜
（Ｃ）の特性を越えない範囲で、銀粉、シリカ粉、アル
ミナ粉等の充填材を加えることができる。銀粉はフレー
ク状、樹枝状、球形、不定形等の銀粉が使用でき、シル
ベストＴＣＧ−１（徳力化学研究所製）、シルフレーク
Ａｇｃ−Ａ（福田金属箔粉工業社製）等の市販品が使用
できる。銀粉を加える場合の使用量は、上記接着剤１０
０重量部に対して９００重量部以下（接着剤全量の９０
重量％以下）、更に好ましくは５６７重量部以下（接着
剤全量の８５重量％以下）である。The adhesive having the above composition includes the above (A) to
Fillers such as silver powder, silica powder, and alumina powder can be added within a range not exceeding the characteristics of (C). Silver powders such as flakes, dendrites, spheres and irregular shapes can be used, and commercially available silver powders such as Silvest TCG-1 (manufactured by Tokuri Chemical Laboratories) and Silflake Agc-A (manufactured by Fukuda Metal Foil & Powder Co., Ltd.) are used. it can. When adding silver powder, the amount used is
900 parts by weight or less with respect to 0 parts by weight (90 parts by weight of the total amount of the adhesive)
% Or less, more preferably 567 parts by weight or less (85% by weight or less of the total amount of the adhesive).
【００１４】本発明の接着剤が特に好適に使用できる支
持部材は銅リードフレームであるが、４２アロイリード
フレーム、絶縁基板、配線付き基板等にも使用できる。
銅リードフレームとしては、例えば、ＭＦ２０２（三菱
電機製）、ＥＦＴＥＣ６４Ｔ（古河電気工業製）等があ
る。The support member to which the adhesive of the present invention can be particularly preferably used is a copper lead frame, but it can also be used for a 42 alloy lead frame, an insulating substrate, a substrate with wiring and the like.
Examples of the copper lead frame include MF202 (manufactured by Mitsubishi Electric) and EFTEC64T (manufactured by Furukawa Electric).
【００１５】本発明の接着剤を用いた半導体装置は、デ
ィスペンス法、スタンピング法、スクリーン印刷等によ
り銅リードフレーム等の支持部材に本発明の接着剤を塗
布し、これに半導体素子を載置し、熱風循環式乾燥機、
ヒートブロック等の加熱装置を用いて加熱硬化させて半
導体素子と支持部材とを接着させ、リードフレームと半
導体素子とを金線等のワイヤで接続し、その後、エポキ
シ樹脂等の封止材で封止して、製造される。このように
して製造される半導体装置の一例を図２に示す。In a semiconductor device using the adhesive of the present invention, the adhesive of the present invention is applied to a supporting member such as a copper lead frame by a dispense method, a stamping method, screen printing, or the like, and a semiconductor element is mounted thereon. , Hot air circulation type dryer,
The semiconductor element and the support member are bonded by heating and curing using a heating device such as a heat block, and the lead frame and the semiconductor element are connected with a wire such as a gold wire, and then sealed with a sealing material such as an epoxy resin. Stopped and manufactured. FIG. 2 shows an example of a semiconductor device manufactured in this manner.
【００１６】[0016]
【実施例】以下、本発明を実施例により説明する。 （実施例１） アクリル酸ノニルフェノキシポリプロピレングリコール ３０ｇ スチレン ２５ｇ エポキシ末端ポリブタジエン−アクリロニトリル共重合体（宇部興産製 ＥＴＢ Ｎ１３００×４０） ２５ｇ クレゾールノボラック型エポキシ（東都化成製 YDCN-702S） ５ｇ フェノールノボラック（明和化成製 Ｈ−１） ５ｇ ２−フェニル−４−メチルイミダゾール ０．２ｇ ターシャリブチルパーオキシベンゾエート １．６ｇ 銀粉 ２１０ｇ を、らいかい機により混合し、接着剤を得た。この接着
剤についての揮発分、ピール接着力及びチップ反り変化
量の各特性を表１に示す。測定方法は前述した通り。The present invention will be described below with reference to examples. (Example 1) Nonylphenoxypolypropylene glycol acrylate 30 g Styrene 25 g Epoxy-terminated polybutadiene-acrylonitrile copolymer (ETB N1300 × 40 manufactured by Ube Industries) 25 g Cresol novolak type epoxy (YDCN-702S manufactured by Toto Kasei) 5 g Phenol novolak (Meiwa Kasei) H-1) 5 g 2-phenyl-4-methylimidazole 0.2 g Tertiary butyl peroxybenzoate 1.6 g Silver powder 210 g was mixed with a grinder to obtain an adhesive. Table 1 shows the characteristics of the volatile matter, peel adhesive strength, and chip warpage change amount of this adhesive. The measuring method is as described above.
【００１７】 （実施例２） アクリル酸ラウリル ２０ｇ スチレン １５ｇ エポキシ末端ポリブタジエン−アクリロニトリル共重合体（宇部興産製 ＥＴＢ Ｎ１３００×４０） １５ｇ ビスフェノールＡ型エポキシ（油化シェルエポキシ製 エピコート１００１） ５ｇ フェノールノボラック（明和化成製 Ｈ−１） ５ｇ ２−フェニル−４−メチルイミダゾール ０．２ｇ ターシャリブチルパーオキシベンゾエート １．６ｇ 銀粉 ２１０ｇ を、らいかい機により混合し、接着剤を得た。この接着
剤についての揮発分、ピール接着力及びチップ反り変化
量の各特性を表１に示す。(Example 2) Lauryl acrylate 20 g Styrene 15 g Epoxy-terminated polybutadiene-acrylonitrile copolymer (ETB N1300 × 40 manufactured by Ube Industries) 15 g Bisphenol A type epoxy (Epicoat 1001 manufactured by Yuka Shell Epoxy) 5 g Phenol novolak (Meiwa) H-1) 5 g 2-phenyl-4-methylimidazole 0.2 g Tertiary butyl peroxybenzoate 1.6 g Silver powder 210 g was mixed with a grinder to obtain an adhesive. Table 1 shows the characteristics of the volatile matter, peel adhesive strength, and chip warpage change amount of this adhesive.
【００１８】 （実施例３） アクリル酸イソボニル ２０ｇ スチレン １５ｇ エポキシ末端ポリブタジエン−アクリロニトリル共重合体 （宇部興産製 ＥＴＢ Ｎ１３００×４０） １５ｇ ビス（４−シアノフェニル−１−（１−メチルエチリデン））ベンゼン １０ｇ ターシャリブチルパーオキシベンゾエート １．６ｇ ナフテン酸コバルト ０．２ｇ ノニルフェノール １．８ｇ 銀粉 ２１０ｇ を、らいかい機により混合し、接着剤を得た。この接着
剤についての揮発分、ピール接着力及びチップ反り変化
量の各特性を表１に示す。Example 3 Isobonyl acrylate 20 g Styrene 15 g Epoxy-terminated polybutadiene-acrylonitrile copolymer (ETB N1300 × 40 manufactured by Ube Industries) 15 g Bis (4-cyanophenyl-1- (1-methylethylidene)) benzene 10 g Tertiary butyl peroxybenzoate 1.6 g Cobalt naphthenate 0.2 g Nonylphenol 1.8 g Silver powder 210 g was mixed with a grinder to obtain an adhesive. Table 1 shows the characteristics of the volatile matter, peel adhesive strength, and chip warpage change amount of this adhesive.
【００１９】 （実施例４） メタクリル酸ラウリル ２０ｇ スチレン １５ｇ エポキシ末端ポリブタジエン−アクリロニトリル共重合体 （宇部興産製 ＥＴＢ Ｎ１３００×４０） １５ｇ ビスマレイミドジフェニルメタン １０ｇ ターシャリブチルパーオキシベンゾエート １．６ｇ 銀粉 ２１０ｇ を、らいかい機により混合し、接着剤を得た。この接着
剤についての揮発分、ピール接着力及びチップ反り変化
量の各特性を表１に示す。Example 4 Lauryl methacrylate 20 g Styrene 15 g Epoxy-terminated polybutadiene-acrylonitrile copolymer (ETB N1300 × 40 manufactured by Ube Industries) 15 g Bismaleimide diphenylmethane 10 g Tertiary butyl peroxybenzoate 1.6 g Silver powder 210 g The mixture was mixed with a paddle to obtain an adhesive. Table 1 shows the characteristics of the volatile matter, peel adhesive strength, and chip warpage change amount of this adhesive.
【００２０】 （比較例１） クレゾールノボラック型エポキシ（東都化成製 YDCN-702S） ３０ｇ フェノールノボラック（明和化成製 Ｈ−１） １０ｇ ２−フェニル−４−メチルイミダゾール ０．２ｇ 銀粉 １００ｇ フェニルグリシジルエーテル １０ｇ を、らいかい機により混合し、接着剤を得た。この接着
剤についての揮発分、ピール接着力及びチップ反り変化
量の各特性を表１に示す。Comparative Example 1 Cresol novolak type epoxy (YDCN-702S manufactured by Toto Kasei) 30 g Phenol novolak (H-1 manufactured by Meiwa Kasei) 10 g 2-phenyl-4-methylimidazole 0.2 g Silver powder 100 g Phenyl glycidyl ether 10 g The mixture was mixed with a grinder to obtain an adhesive. Table 1 shows the properties of this adhesive such as volatile matter, peel adhesive strength, and chip warpage change.
【００２１】 （比較例２） クレゾールノボラック型エポキシ（東都化成製 YDCN-702S） ３０ｇ カルボキシル末端ポリブタジエンーアクリロニトリル共重合体（宇部興産製 Ｃ ＴＢＮ１３００×９） ３０ｇ フェノールノボラック（明和化成製 Ｈ−１） ５ｇ ２−フェニル−４−メチルイミダゾール ０．２ｇ 銀粉 １００ｇ 酢酸ブチルセロソルブ １０ｇ を、らいかい機により混合し、接着剤を得た。この接着
剤についての揮発分、ピール接着力及びチップ反り変化
量の各特性を表１に示す。Comparative Example 2 Cresol novolak type epoxy (YDCN-702S manufactured by Toto Kasei) 30 g Carboxyl-terminated polybutadiene-acrylonitrile copolymer (CTBN1300 × 9 manufactured by Ube Industries) 30 g Phenol novolak (H-1 manufactured by Meiwa Kasei) 5 g 0.2 g of 2-phenyl-4-methylimidazole, 100 g of silver powder, and 10 g of butyl cellosolve were mixed with a grinder to obtain an adhesive. Table 1 shows the characteristics of the volatile matter, peel adhesive strength, and chip warpage change amount of this adhesive.
【００２２】 （比較例３） クレゾールノボラック型エポキシ（東都化成製 YDCN-702S） ３０ｇ カルボキシル末端ポリブタジエン−アクリロニトリル共重合体（宇部興産製 Ｃ ＴＢＮ１３００×９） ３０ｇ フェノールノボラック（明和化成製 Ｈ−１） ５ｇ ２−フェニル−４メチルイミダゾール ０．２ｇ 銀粉 １００ｇ フェニルグリシジルエーテル １０ｇ を、らいかい機により混合し、接着剤を得た。この接着
剤についての揮発分、ピール接着力及びチップ反り変化
量の各特性を表１に示す。Comparative Example 3 Cresol novolak type epoxy (YDCN-702S manufactured by Toto Kasei) 30 g Carboxyl-terminated polybutadiene-acrylonitrile copolymer (CTBN1300 × 9 manufactured by Ube Industries) 30 g Phenol novolak (H-1 manufactured by Meiwa Kasei) 5 g 0.2 g of 2-phenyl-4 methyl imidazole, 100 g of silver powder, and 10 g of phenyl glycidyl ether were mixed with a grinder to obtain an adhesive. Table 1 shows the characteristics of the volatile matter, peel adhesive strength, and chip warpage change amount of this adhesive.
【００２３】[0023]
【表１】表１ 接着剤の特性 実施例の接着剤 比較例の接着剤 特性 No.1 No.2 No.3 No.4 No.1 No.2 No.3 揮発分 4 5 4 3 5 13 2 （wt％） ピール接着力 0.8 0.6 0.9 0.5 0.6 0.7 0.05 （kgf/chip） チップ反り 8 11 10 12 20 10 1（μｍ） TABLE 1 adhesive properties of the adhesive Comparative Example Characteristics Example of adhesive No.1 No.2 No.3 No.4 No.1 No.2 No.3 volatiles 4 5 4 3 5 13 2 (wt%) Peel adhesion 0.8 0.6 0.9 0.5 0.6 0.7 0.05 (kgf / chip) Chip warpage 8 11 10 12 20 10 1 (μm)
【００２４】半田リフロークラック評価試験実施例１〜
４および比較例１〜３で各々得られた接着剤を用いて、
以下に示すような半田リフロークラック試験を行った。
半田リフロークラック試験方法：銅リードフレームと８
ｍｍ×１０ｍｍ×０．３ｍｍのシリコンチップを上記接
着剤を用いて１５０℃、１時間加熱して接着させた後、
封止材（日立化成製 ＣＥＬ−４６２０）により封止
し、半田リフロー試験用パッケージ（ＱＦＰ、１４ｍｍ
×２０ｍｍ×１．４ｍｍ）を組み立てた。そのパッケー
ジを、温度８５℃、湿度８５％に設定された恒温恒湿機
中で４８時間吸湿させた。その後、２４０℃、１０秒の
ＩＲリフローを行い、パッケージクラックの発生数を顕
微鏡（倍率：１５倍）で観察した。試験の結果、実施例
１〜４の接着剤を使用したパッケージはクラックの発生
が見られなかったが、比較例１〜３の接着剤を使用した
パッケージは全数にクラックが発生していた。Solder reflow crack evaluation test Example 1
4 and the adhesives obtained in Comparative Examples 1 to 3, respectively,
The following solder reflow crack test was performed.
Solder reflow crack test method: Copper lead frame and 8
After bonding a silicon chip of mm × 10 mm × 0.3 mm by heating at 150 ° C. for 1 hour using the above adhesive,
It is sealed with a sealing material (CEL-4620 manufactured by Hitachi Chemical), and a package for solder reflow test (QFP, 14 mm)
× 20 mm × 1.4 mm). The package was allowed to absorb moisture for 48 hours in a thermo-hygrostat set at a temperature of 85 ° C. and a humidity of 85%. Thereafter, IR reflow was performed at 240 ° C. for 10 seconds, and the number of package cracks generated was observed with a microscope (magnification: 15 times). As a result of the test, cracks were not observed in the packages using the adhesives of Examples 1 to 4, but cracks occurred in all the packages using the adhesives of Comparative Examples 1 to 3.
【００２５】[0025]
【表２】表２ 半田リフロークラック評価試験 実施例の接着剤使用 比較例の接着剤使用 特性 No.1 No.2 No.3 No.4 No.1 No.2 No.3 クラック 0/5 0/5 0/5 0/5 5/5 5/5 5/5（発生数） [Table 2] Table 2 Solder reflow crack Evaluation of adhesive used in the evaluation test example Adhesive use characteristics of comparative example No.1 No.2 No.3 No.4 No.1 No.2 No.3 Crack 0/5 0 / 5 0/5 0/5 5/5 5/5 5/5 (number of occurrences)
【００２６】[0026]
【発明の効果】請求項１の接着剤は、半導体素子と支持
部材との接着剤として使用でき、半田リフロー時のリフ
ロークラックの発生は低減される。支持部材としては、
銅リードフレームが特に好適である。請求項２の半導体
装置は、半田リフロー時のリフロークラックの発生が低
減され、信頼性が高い。The adhesive of claim 1 can be used as an adhesive between a semiconductor element and a support member, and the occurrence of reflow cracks during solder reflow is reduced. As a support member,
Copper lead frames are particularly preferred. In the semiconductor device according to the second aspect, the occurrence of reflow cracks during solder reflow is reduced, and the reliability is high.
【図１】プッシュプルゲージを用いてピール強度を測定
する方法を説明する正面図である。FIG. 1 is a front view illustrating a method of measuring a peel strength using a push-pull gauge.
【図２】本発明の接着剤を用いた半導体装置の一例の断
面図である。FIG. 2 is a cross-sectional view of an example of a semiconductor device using the adhesive of the present invention.
１．半導体素子 ２．接着剤 ３．銅リードフレーム ４．プッシュプルゲー
ジ ５．熱盤 １１．半導体素子 １２．接着剤 １３．リードフレーム １４．ワイヤ １５．封止材1. Semiconductor element 2. Adhesive 3. Copper lead frame 4. Push-pull gauge 5. Hot plate 11. Semiconductor element 12. Adhesive 13. Lead frame 14. Wire 15. Sealing material
───────────────────────────────────────────────────── フロントページの続き (72)発明者 武田 信司 茨城県つくば市和台48 日立化成工業株式 会社筑波開発研究所内 Ｆターム(参考） 4J040 CA071 DF081 EB052 EC062 EC281 FA041 FA141 FA182 GA07 GA11 LA06 LA08 MA02 NA20 5F047 BA32 BA34 BA35 ────────────────────────────────────────────────── ─── Continued on front page (72) Inventor Shinji Takeda 48 Wadai, Tsukuba, Ibaraki Prefecture F-term in Tsukuba Development Laboratory, Hitachi Chemical Co., Ltd. (Reference) 4J040 CA071 DF081 EB052 EC062 EC281 FA041 FA141 FA182 GA07 GA11 LA06 LA08 MA02 NA20 5F047 BA32 BA34 BA35
Claims (2)
剤であって、（Ａ）揮発分が１０重量％以下、（Ｂ）ピ
ール接着力が０．３ｋｇｆ以上、及び（Ｃ）チップ反り
変化量が１５μｍ以下、である接着剤。1. An adhesive for adhering a semiconductor element to a support member, wherein (A) a volatile component is 10% by weight or less, (B) a peel adhesive force is 0.3 kgf or more, and (C) a change in chip warpage. Is 15 μm or less.
支持部材に接着してなる半導体装置。2. A semiconductor device comprising a semiconductor element bonded to a support member using the adhesive of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001345955A JP2002194323A (en) | 2001-11-12 | 2001-11-12 | Bonding agent and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001345955A JP2002194323A (en) | 2001-11-12 | 2001-11-12 | Bonding agent and semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25996597A Division JP3265244B2 (en) | 1997-09-25 | 1997-09-25 | Adhesive and semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008060262A Division JP2008166841A (en) | 2008-03-10 | 2008-03-10 | Adhesive, and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002194323A true JP2002194323A (en) | 2002-07-10 |
Family
ID=19159210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001345955A Withdrawn JP2002194323A (en) | 2001-11-12 | 2001-11-12 | Bonding agent and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002194323A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010189469A (en) * | 2009-02-16 | 2010-09-02 | Hitachi Chem Co Ltd | Adhesive composition, adhesive sheet, and semiconductor device |
| JP2013033968A (en) * | 2012-08-20 | 2013-02-14 | Sumitomo Bakelite Co Ltd | Adhesive agent and semiconductor package |
-
2001
- 2001-11-12 JP JP2001345955A patent/JP2002194323A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010189469A (en) * | 2009-02-16 | 2010-09-02 | Hitachi Chem Co Ltd | Adhesive composition, adhesive sheet, and semiconductor device |
| JP2013033968A (en) * | 2012-08-20 | 2013-02-14 | Sumitomo Bakelite Co Ltd | Adhesive agent and semiconductor package |
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