JP2008159648A - Flux transfer apparatus, and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of removing flux remaining on the side wall of each of transfer pins. <P>SOLUTION: This manufacturing method of a semiconductor device is provided with a step of preparing a flux transfer apparatus equipped with a cleaning plate 32 having a plurality of openings 32a arranged so as to correspond to a plurality of arranged transfer pins 31; a step of allowing each of the transfer pins 31 to be inserted through each of the openings 32a, and adhering flux 20 on a tip of each of the transfer pins 31 in a state where the transfer pins 31 each expose their tips from the bottom surface of the cleaning plate 32; a step of transferring the flux adhering on the tip of each of the transfer pins 31 to the semiconductor device; and a step of allowing the tip of each of the transfer pins 31 to be positioned on the same as the lower surface of the cleaning plate 32 or higher than the lower surface to remove the flux 20 remaining on the side wall of each of the transfer pins 31. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a flux transfer apparatus and a semiconductor device manufacturing method. In particular, the present invention relates to a flux transfer apparatus capable of removing flux remaining on the side wall of a transfer pin and a method for manufacturing a semiconductor device.

  6A and 6B are diagrams for explaining a conventional method for manufacturing a semiconductor device. In this method, a solder ball 103 is placed after a flux 120 is applied on a land 102 formed on the surface of the semiconductor device 100.

  First, as shown in FIG. 6A, the flux 120 is applied onto the stage 110 of the flux transfer device, and the surface of the flux 120 is flattened using a squeegee (not shown). Next, the transfer head 130 is lowered toward the flux 120, and the tips of the plurality of transfer pins 131 are immersed in the flux 120.

Next, as shown in FIG. 6B, the transfer head 130 is raised. Thereby, a certain amount of flux 120 adheres to the tip of each of the plurality of transfer pins 131.
Next, as shown in FIG. 6C, the semiconductor device 100 is positioned below the transfer head 130. Next, the transfer head 130 is lowered toward the surface of the semiconductor device 100, and the flux 120 attached to the tip of the transfer pin 131 is attached onto the land 102 (see, for example, Patent Document 1).

  Next, as shown in FIG. 6D, the transfer head 130 is retracted, and the solder balls 103 are temporarily fixed to the flux 120 on each land 102. Thereafter, the solder balls 103 are reflowed to weld the solder balls 103 to the lands 102.

JP 2001-35873 A (second paragraph)

  When the flux adhering to the transfer pin is transferred to the land of the semiconductor device, a part of the flux may remain on the side wall of the transfer pin. If the flux remains on the side wall of the transfer pin, the next time the transfer pin is immersed in the flux on the stage and rises, excess flux will adhere to the transfer pin. It will increase. If this is repeated, a certain amount or more of flux may accumulate between the transfer pins (the region indicated by reference numeral 131a in FIG. 6), and this accumulated flux may be transferred to the semiconductor device. In this case, the flux adhering to each adjacent land is connected by the flux transferred from between the transfer pins. When the fluxes adhering to the adjacent lands are connected to each other, when the solder balls are reflowed, the adjacent solder balls are short-circuited.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a flux transfer apparatus and a semiconductor device manufacturing method capable of removing the flux remaining on the side wall of the transfer pin.

In order to solve the above-described problem, a flux transfer device according to the present invention has a plurality of transfer pins on which flux adheres to the tip and transfers the flux to a semiconductor device;
A cleaning plate having a plurality of openings arranged to correspond to the arrangement of the plurality of transfer pins;
And a vertical driving mechanism for moving the cleaning plate up and down in a state where the transfer pin is inserted through each of the plurality of openings.

  According to this flux transfer device, the vertical drive mechanism moves the cleaning plate downward, so that the flux remaining on the side wall of the transfer pin can be removed. The diameter of the opening is preferably slightly larger than the diameter of the transfer pin.

  You may further comprise the control part which moves the said cleaning plate up and down by controlling the said up-and-down drive mechanism. In this case, the control unit inserts the transfer pin into each of the plurality of openings from the step of attaching the flux to the tips of the plurality of transfer pins to the step of transferring the flux to the semiconductor device. After the tips of the plurality of transfer pins are exposed from the lower surface of the cleaning plate and the flux is transferred to the semiconductor device, the tips of the plurality of transfer pins are substantially flush with the lower surface or above the lower surface. By positioning, the flux remaining on the side wall of the transfer pin may be removed.

  In addition, when attaching the flux to the tips of the plurality of transfer pins, the control unit inserts the transfer pins into the openings, and exposes the tips of the plurality of transfer pins from the lower surface of the cleaning plate. After the flux adheres to the tips of the plurality of transfer pins, before transferring the flux to the semiconductor device, the tips of the plurality of transfer pins are inserted into the plurality of openings. The flux remaining on the side wall may be removed.

  The flux removed from the side wall of the transfer pin adheres to the lower surface of the cleaning plate, but preferably further includes a flux removing mechanism for removing the flux adhered to the lower surface of the cleaning plate.

A method of manufacturing a semiconductor device according to the present invention includes a step of preparing a flux transfer device including a plurality of transfer pins and a cleaning plate having a plurality of openings arranged to correspond to the arrangement of the plurality of transfer pins. ,
Attaching the flux to the tips of the plurality of transfer pins in a state where the transfer pins are inserted through the plurality of openings, and the tips of the plurality of transfer pins are exposed from the lower surface of the cleaning plate;
Transferring the flux adhered to the tips of the plurality of transfer pins to a semiconductor device;
Removing the flux remaining on the side wall of the transfer pin by positioning the tips of the plurality of transfer pins substantially flush with the lower surface or above the lower surface.

Another method of manufacturing a semiconductor device according to the present invention provides a flux transfer apparatus that includes a plurality of transfer pins and a cleaning plate having a plurality of openings arranged to correspond to the arrangement of the plurality of transfer pins. Process,
Attaching the flux to the tips of the plurality of transfer pins in a state where the transfer pins are inserted through the plurality of openings, and the tips of the plurality of transfer pins are exposed from the lower surface of the cleaning plate;
Removing the flux adhering to the side wall of the transfer pin by allowing the tips of the transfer pins to enter into the plurality of openings; and
Exposing the tips of the plurality of transfer pins and the flux adhering to the tips from the plurality of openings, and transferring the flux to a semiconductor device.

In another method of manufacturing a semiconductor device according to the present invention, a step of attaching a flux to each tip of a plurality of transfer pins,
Transferring the flux adhered to the tips of the plurality of transfer pins to a semiconductor device;
Removing flux remaining on the side wall of the transfer pin.

  In the semiconductor device manufacturing method described above, the semiconductor device may be divided into chips and mounted on a mounting substrate, or may be in a state of a semiconductor wafer before being mounted on the mounting substrate. .

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1, 2, and 3 are diagrams for explaining a method of manufacturing a semiconductor device according to the first embodiment of the present invention. In this method, the solder ball 3 is placed after the flux 20 is applied on the land 2 formed on the surface of the semiconductor device 1. The land 2 is formed by rearrangement wiring, for example.

  First, as shown in FIG. 1A, a flux 20 is applied on a stage 10 of a flux transfer apparatus. Next, the flux 20 on the stage 10 is flattened using the squeegee 12 so that the thickness of the flux 20 is 40 μm to 70 μm.

  Next, as shown in FIG. 1B, the transfer head 30 is lowered using the driving means 40. As a result, the tips of the plurality of transfer pins 31 provided on the lower surface of the transfer head 30 are immersed in the flux 20. The driving means 40 is controlled by a control unit (not shown).

  As shown in FIGS. 1B and 1C, a cleaning plate 32 is attached to the lower surface of the transfer head 30 via a vertical drive means 33 such as an air cylinder. The cleaning plate 32 is provided with a plurality of openings 32a. The diameter of the opening 32 a is slightly larger than the diameter of the transfer pin 31, and the arrangement thereof corresponds to the arrangement of the transfer pin 31. The tip of the transfer pin 31 is exposed from the lower surface of the cleaning plate 32 through the opening 32 a of the cleaning plate 32. Note that the vertical drive means 33 is controlled by the control unit described above.

  Next, as shown in FIG. 2A, the transfer head 30 is raised using the driving means 40. At this time, the flux 20 adheres to the tips of the plurality of transfer pins 31.

  Next, as shown in FIG. 2B, the transfer head 30 is positioned above the semiconductor device 1 by using the driving means 40, and then the transfer head 30 is lowered. As a result, the flux 20 adhered to the tips of the plurality of transfer pins 31 adheres to the lands 2 formed on the surface of the semiconductor device 1.

  Next, as shown in FIG. 2C, the transfer head 30 is raised using the driving means 40. As a result, the flux 20 attached to the tips of the plurality of transfer pins 31 is transferred to the land 2. At this time, a part of the flux 20 may remain on the side wall at the tip of the transfer pin 31.

  Next, the transfer head 30 is retracted using the driving means 40, and the solder balls 3 are temporarily fixed to the flux 20 on each land 2. This temporary fixing is performed, for example, by rolling a large number of solder balls 3 on the surface of the semiconductor device 1 and trapping a part of the solder balls 3 by the viscosity of the flux 20. Thereafter, the solder balls 3 are reflowed to weld the solder balls 3 to the lands 2.

  Thereafter, as shown in FIG. 3A, the transfer head 30 is moved to an area where the squeegee 34 is located by using the driving means 40. Next, the cleaning plate 32 is pushed down using the vertical driving means 33 so that the tip of the transfer pin 31 is flush with the lower surface of the cleaning plate 32 or into the opening 32a. As a result, the flux 20 remaining on the side wall at the front end of the transfer pin 31 is removed from the side wall at the front end of the transfer pin 31 and adheres to the lower surface of the cleaning plate 32.

  Next, as shown in FIG. 3B, the squeegee 34 is used to remove the flux 20 attached to the lower surface of the cleaning plate 32.

  As described above, according to the first embodiment of the present invention, after the flux 20 is transferred to the land 2, the flux 20 may remain on the side wall at the tip of the transfer pin 31. 32. For this reason, it is possible to suppress the flux 20 from remaining between the adjacent transfer pins 31.

  Therefore, it can suppress that the flux 20 adhering on each adjacent land 2 mutually connects, As a result, when the solder ball 3 is reflowed, it can suppress that the adjacent solder ball 3 short-circuits. For this reason, the yield of the semiconductor device 1 is improved.

  FIG. 4 is a view for explaining the method for manufacturing a semiconductor device according to the second embodiment of the present invention. Hereinafter, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted. This embodiment is the same as the first embodiment except that a roll paper 35 is used instead of a squeegee as a method for removing the flux 20 attached to the lower surface of the cleaning plate 32.

That is, in this embodiment, after transferring the flux 20 onto the land of the semiconductor device, the transfer head 30 is moved above the roll paper 35 by using the driving means 40. Next, as in the first embodiment, the cleaning plate 32 is pushed down using the vertical drive means 33, and the flux 20 remaining on the side wall at the front end of the transfer pin 31 is removed from the side wall at the front end of the transfer pin 31. It adheres to the lower surface of the plate 32. Next, the lower surface of the cleaning plate 32 is brought into contact with the roll paper 35 using the driving unit 40, and then the roll paper 35 is moved in the horizontal direction. Thereby, the flux 20 is removed from the lower surface of the cleaning plate 32 and adheres to the roll paper 35.
As described above, the present embodiment can provide the same effects as those of the first embodiment.

  Each drawing in FIG. 5 is a view for explaining the method for manufacturing a semiconductor device according to the third embodiment of the present invention. Hereinafter, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  First, as shown in FIG. 5A, the flux 20 is attached to the tip of each of the plurality of transfer pins 31. The steps up to here are the same as those described with reference to FIGS. 1A to 2A in the first embodiment.

  Next, as shown in FIG. 5B, the transfer head 30 is moved to an area where the squeegee 34 is located by using the driving means 40. Next, the cleaning plate 32 is pushed down by using the vertical drive means 33 so that the tip of the transfer pin 31 enters the opening 32a to a certain depth. As a result, the flux 20 adhering to the side wall at the front end of the transfer pin 31 and the flux 20 remaining on the side wall at the front end of the transfer pin 31 during the previous operation are removed from the side wall at the front end of the transfer pin 31 and cleaned. It adheres to the lower surface of the plate 32.

Next, as shown in FIG. 5C, the squeegee 34 is used to remove the flux 20 attached to the lower surface of the cleaning plate 32.
Next, as illustrated in FIG. 5D, the transfer head 30 is positioned above the semiconductor device 1 using the driving unit 40. Next, the cleaning plate 32 is raised using the vertical driving means 33. As a result, the tip of the transfer pin 31 and the flux 20 adhering to the tip are exposed from the opening 32a. Thereafter, the transfer head 30 is lowered. As a result, the flux 20 adhered to the tips of the plurality of transfer pins 31 adheres to the lands 2 formed on the surface of the semiconductor device 1.

  Next, as illustrated in FIG. 5E, the transfer head 30 is raised using the driving unit 40. As a result, the flux 20 attached to the tips of the plurality of transfer pins 31 is transferred to the land 2. At this time, a part of the flux 20 may remain on the side wall at the tip of the transfer pin 31, but as described above, this flux 20 is removed at the next operation.

  As described above, the present embodiment can provide the same effects as those of the first embodiment. In the present embodiment, the flux 20 adhering to the lower surface of the cleaning plate 32 may be removed using roll paper as in the second embodiment.

  Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in each of the above-described embodiments, the flux 20 may be transferred onto the semiconductor device 1 in the state of the semiconductor wafer before being divided into semiconductor chips, and then the solder balls 3 may be attached to the lands 2 in the state of the semiconductor wafer.

Each drawing is a view for explaining the method of manufacturing the semiconductor device according to the first embodiment. Each figure is a figure for demonstrating the next process of FIG. Each figure is a figure for demonstrating the next process of FIG. FIG. 6 is a view for explaining the method for manufacturing the semiconductor device according to the second embodiment. Each drawing is a view for explaining a method of manufacturing a semiconductor device according to the third embodiment. Each drawing is a view for explaining a conventional method of manufacturing a semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,100 ... Semiconductor device, 2,102 ... Land, 3,103 ... Solder ball, 10, 110 ... Stage, 12, 34 ... Squeegee, 20, 120 ... Flux, 30, 130 ... Transfer head, 31, 131 ... Transfer Pin, 32 ... Cleaning plate, 32a ... Opening, 33 ... Vertical drive mechanism, 35 ... Roll paper, 40 ... Drive means, 131a ... Between transfer pins

Claims (7)

A plurality of transfer pins for attaching a flux to the tip and transferring the flux to a semiconductor device;
A cleaning plate having a plurality of openings arranged to correspond to the arrangement of the plurality of transfer pins;
A vertical drive mechanism for moving the cleaning plate up and down in a state where the transfer pin is inserted through each of the plurality of openings;
A flux transfer apparatus comprising: A control unit that moves the cleaning plate up and down by controlling the vertical drive mechanism;
The controller is
Between the step of attaching the flux to the tips of the plurality of transfer pins and the step of transferring the flux to the semiconductor device, the transfer pins are inserted through the openings, and the tips of the transfer pins are attached. Exposed from the lower surface of the cleaning plate;
After transferring the flux to the semiconductor device, the tip of each of the plurality of transfer pins is positioned substantially flush with the lower surface or above the lower surface, so that the flux remaining on the side wall of the transfer pin is reduced. The flux transfer device according to claim 1 to be removed. A control unit that moves the cleaning plate up and down by controlling the vertical drive mechanism;
The controller is
When attaching flux to the tips of the plurality of transfer pins, the transfer pins are inserted through the plurality of openings, and the tips of the plurality of transfer pins are exposed from the lower surface of the cleaning plate,
After the flux adheres to the tips of the plurality of transfer pins, before the flux is transferred to the semiconductor device, the tips of the plurality of transfer pins are inserted into the plurality of openings to form the sidewalls of the transfer pins. The flux transfer apparatus according to claim 1, wherein residual flux is removed. The flux removed from the side wall of the transfer pin adheres to the lower surface of the cleaning plate,
The flux transfer device according to any one of claims 1 to 3, further comprising a flux removing mechanism that removes the flux adhering to the lower surface of the cleaning plate. Preparing a flux transfer device comprising a plurality of transfer pins and a cleaning plate having a plurality of openings arranged to correspond to the arrangement of the plurality of transfer pins;
Attaching the flux to the tips of the plurality of transfer pins in a state where the transfer pins are inserted through the plurality of openings, and the tips of the plurality of transfer pins are exposed from the lower surface of the cleaning plate;
Transferring the flux adhered to the tips of the plurality of transfer pins to a semiconductor device;
Removing the flux remaining on the side wall of the transfer pin by positioning the tip of each of the plurality of transfer pins substantially flush with the lower surface or above the lower surface;
A method for manufacturing a semiconductor device comprising: Preparing a flux transfer device comprising a plurality of transfer pins and a cleaning plate having a plurality of openings arranged to correspond to the arrangement of the plurality of transfer pins;
Attaching the flux to the tips of the plurality of transfer pins in a state where the transfer pins are inserted through the plurality of openings, and the tips of the plurality of transfer pins are exposed from the lower surface of the cleaning plate;
Removing the flux adhering to the side wall of the transfer pin by allowing the tips of the transfer pins to enter into the plurality of openings; and
Exposing the tips of the plurality of transfer pins and the flux adhering to the tips from the plurality of openings, and transferring the flux to a semiconductor device;
A method for manufacturing a semiconductor device comprising: A step of attaching a flux to the tip of each of a plurality of transfer pins;
Transferring the flux adhered to the tips of the plurality of transfer pins to a semiconductor device;
Removing flux remaining on the side wall of the transfer pin;
A method for manufacturing a semiconductor device comprising:

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