JP2008166466A - Flux transfer apparatus and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a flux transfer apparatus capable of suppressing growth of the flux remaining between adjoining transfer pins. <P>SOLUTION: The flux transfer apparatus comprises a plurality of transfer pins 31 where a flux 20 sticks to their tips, stages 10 and 11 which comprise a plurality of recesses 11a so arranged as to correspond to the arrangement of the plurality of transfer pins 31, with the flux 20 embedded in the plurality of recesses 11a, a removing means 12 for removing the flux 20 positioned on the surfaces of the stages 10 and 11, and a transfer pin driving means 32 which drives the plurality of transfer pins 31 so that the flux 20 embedded in the plurality of recesses 11a are made to stick to the tips of the transfer pins 31a, and makes the stuck flux 20 to be transferred onto a semiconductor device. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a flux transfer apparatus and a semiconductor device manufacturing method. In particular, the present invention relates to a flux transfer apparatus and a semiconductor device manufacturing method capable of suppressing the growth of remaining flux between adjacent transfer pins.

  4A and 4B are diagrams for explaining a conventional method of manufacturing a semiconductor device. In this method, a solder ball 103 is placed after a flux 120 is applied on a land 102 formed on the surface of the semiconductor device 100.

  First, as shown in FIG. 4A, the flux 120 is applied onto the stage 110 of the flux transfer device, and the surface of the flux 120 is flattened using a squeegee (not shown). Next, the transfer head 130 is lowered toward the flux 120, and the tips of the plurality of transfer pins 131 are immersed in the flux 120.

Next, as shown in FIG. 4B, the transfer head 130 is raised. Thereby, a certain amount of flux 120 adheres to the tip of each of the plurality of transfer pins 131.
Next, as shown in FIG. 4C, the semiconductor device 100 is positioned below the transfer head 130. Next, the transfer head 130 is lowered toward the surface of the semiconductor device 100, and the flux 120 attached to the tip of the transfer pin 131 is attached on the land 102 (see, for example, Patent Document 1).

  Next, as shown in FIG. 4D, the transfer head 130 is retracted, and the solder balls 103 are temporarily fixed to the flux 120 on each land 102. Thereafter, the solder balls 103 are reflowed to weld the solder balls 103 to the lands 102.

JP 2001-35873 A (second paragraph)

  When the flux adhering to the transfer pin is transferred to the land of the semiconductor device, a part of the flux may remain on the side wall of the transfer pin. If the flux remains on the side wall of the transfer pin, the next time the transfer pin is immersed in the flux on the stage and rises, excess flux will adhere to the transfer pin. It will increase. If this is repeated, a certain amount or more of flux may accumulate between the transfer pins (the region indicated by reference numeral 131a in FIG. 4), and this accumulated flux may be transferred to the semiconductor device. In this case, the flux adhering to each adjacent land is connected by the flux transferred from between the transfer pins. When the fluxes adhering to the adjacent lands are connected to each other, when the solder balls are reflowed, the adjacent solder balls are short-circuited.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a flux transfer apparatus and a semiconductor device manufacturing method capable of suppressing the growth of residual flux between adjacent transfer pins. It is to provide.

In order to solve the above problems, a flux transfer device according to the present invention includes a plurality of transfer pins on which flux adheres to the tip,
A stage having a plurality of recesses arranged to correspond to the arrangement of the plurality of transfer pins, and a flux embedded in the plurality of recesses;
Removing means for removing the flux located on the surface of the stage;
Transfer pin driving means for driving the plurality of transfer pins, causing the flux embedded in the plurality of recesses to adhere to the tips of the transfer pins, and transferring the attached flux onto the semiconductor device.

  According to the flux transfer device, in the step of attaching the flux to the plurality of transfer pins, it is possible to prevent the flux from existing in regions corresponding to each other between the plurality of transfer pins in the stage. it can. For this reason, even if flux remains on the side walls of the plurality of transfer pins, excess flux does not adhere to the plurality of transfer pins. Therefore, it is possible to suppress the remaining flux from growing between adjacent transfer pins.

  The stage may include a stage main body and a surface member disposed on the surface of the stage main body and having the plurality of recesses on the surface. In this case, the arrangement of the plurality of transfer pins in a plurality of patterns can be accommodated by replacing the surface member.

  The stage may include a stage main body and a surface member disposed on the surface of the stage main body and having a plurality of openings on the surface. In this case, the plurality of recesses are formed by the plurality of openings and the surface of the stage main body exposed from each of the plurality of openings. By replacing the surface member, it is possible to cope with the arrangement of the plurality of transfer pins in a plurality of patterns.

A semiconductor device manufacturing method according to the present invention includes a plurality of transfer pins to which a flux adheres at a tip and a stage having a plurality of concave portions arranged on the surface so as to correspond to the arrangement of the plurality of transfer pins. Preparing a transfer device;
Embedding the flux in each of the plurality of recesses by applying flux to each of the plurality of recesses and the surface of the stage, and then removing the flux located on the surface of the stage;
Transferring the flux to the tips of each of the plurality of transfer pins by lowering the tips of the plurality of transfer pins in each of the plurality of recesses, and then raising the plurality of transfer pins; and
Transferring the flux to the semiconductor device by moving tips of the plurality of transfer pins onto the semiconductor device;
And a step of positioning a solder ball on the flux.
The semiconductor device may be divided into chips and mounted on a mounting substrate, or may be in a semiconductor wafer state before being mounted on the mounting substrate.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 and 2 are views for explaining a method of manufacturing a semiconductor device according to the first embodiment of the present invention. In this method, the solder ball 3 is placed after the flux 20 is applied on the land 2 formed on the surface of the semiconductor device 1. The land 2 is formed by rearrangement wiring, for example.

First, as shown in FIG. 1A, a surface member 11 having a plurality of recesses 11a is fixed on a stage body 10 of a flux transfer apparatus. The concave portion 11a has a shape obtained by cutting a part of a sphere (not including the center of the sphere), and the arrangement thereof is the same as the arrangement of the transfer pins of the transfer head of the flux transfer apparatus. The surface member 11 can be replaced. When the arrangement of the transfer pins is changed, the arrangement of the recesses 11a can be changed in accordance with the arrangement of the transfer pins by changing the surface member 11.
Next, the flux 20 is applied to the surface of the surface member 11 and the plurality of recesses 11a.

  Next, as shown in FIG. 1B, the flux 20 on the surface member 11 is removed using the squeegee 12. Thereby, in the surface member 11, the flux 20 remains only in the recess 11a.

  Next, as shown in FIG. 1C, the transfer head 30 is lowered using the driving means 32, and the tips of the plurality of transfer pins 31 are positioned in the corresponding recesses 11a. Thereby, the tip portions of the respective transfer pins 31 are immersed in the flux 20 remaining in the recess 11a. In this embodiment, the transfer pin 31 becomes smaller as the cross-sectional area in the horizontal direction (lateral direction in the figure) approaches the tip. The side surface of the transfer pin 31 has a shape close to an arc in a vertical sectional view (for example, this figure). The driving unit 32 is controlled by a control unit (not shown).

  Next, as shown in FIG. 1D, the transfer head 30 is raised using the driving means 32. At this time, the flux 20 remaining in the recess 11 a adheres to the tip of the transfer pin 31 and rises together with the transfer pin 31. As described above, since the flux 20 is only in the recess 11 a of the surface member 11, even if the flux remains on the side wall of the transfer pin 31, it is possible to prevent excess flux 20 from adhering to the transfer pin 31.

  Next, as shown in FIG. 2A, the transfer head 30 is positioned above the semiconductor device 1 using the driving unit 32, and then the transfer head 30 is lowered. As a result, the flux 20 adhered to the tips of the plurality of transfer pins 31 adheres to the lands 2 formed on the surface of the semiconductor device 1.

  Next, as shown in FIG. 2B, the transfer head 30 is raised using the driving means 32. As a result, the flux 20 attached to the tips of the plurality of transfer pins 31 is transferred to the land 2. Next, the transfer head 30 is retracted using the driving means 32, and the solder balls 3 are temporarily fixed to the flux 20 on each land 2. This temporary fixing is performed, for example, by rolling a large number of solder balls 3 on the surface of the semiconductor device 1 and trapping a part of the solder balls 3 by the viscosity of the flux 20. Thereafter, the solder balls 3 are reflowed to weld the solder balls 3 to the lands 2.

  As described above, according to the first embodiment of the present invention, the recess 11a is formed in the surface member 11 on the stage body 10, and the flux 20 remains only in the recess 11a. The flux 20 remaining in the recess 11 a adheres to the transfer pin 31 of the transfer head 30, and this flux 20 is transferred to the land 2 of the semiconductor device 1. When the flux 20 is transferred to the land 2, a part of the flux 20 may remain on the side wall of the transfer pin 31. As described above, the flux 20 is only in the recess 11 a of the surface member 11. It is possible to prevent excess flux 20 from adhering to the transfer pin 31.

  For this reason, it can suppress that the flux which remained between the adjacent transfer pins 31 grows. Therefore, it can suppress that the flux 20 adhering on each adjacent land 2 mutually connects, As a result, when the solder ball 3 is reflowed, it can suppress that the adjacent solder ball 3 short-circuits. For this reason, the yield of the semiconductor device 1 is improved.

  Each drawing in FIG. 3 is a view for explaining the method for manufacturing a semiconductor device according to the second embodiment of the present invention. The present embodiment is the same as the first embodiment except that a surface member 13 having an opening pattern 13 a is used instead of the surface member 11. The arrangement of the opening patterns 13a is the same as the arrangement of the recesses 11a in the first embodiment. That is, in this embodiment, the opening pattern 13a and the surface of the stage main body 10 exposed by the opening pattern 13a form a portion corresponding to the recess 11a in the first embodiment. The surface member 13 can be replaced. When the arrangement of the transfer pin is changed, the arrangement of the opening pattern 13a can be changed in accordance with the arrangement of the transfer pin by changing the surface member 13.

  First, as shown in FIG. 3A, the surface member 13 is fixed on the stage main body 10 of the flux transfer apparatus. Next, the flux 20 is applied to the surface of the surface member 13 and the plurality of opening patterns 13a.

  Next, as shown in FIG. 3B, the flux 20 on the surface member 13 is removed using the squeegee 12. Thereby, in the surface member 13, the flux 20 remains only in the opening pattern 13a.

  Next, as shown in FIG. 1C, the transfer head 30 is lowered using the driving means 32, and the tips of the plurality of transfer pins 31 are positioned in the corresponding opening pattern 13a. Thereby, the tip portions of the transfer pins 31 are immersed in the flux 20 remaining in the opening pattern 13a.

  Next, as shown in FIG. 1D, the transfer head 30 is raised using the driving means 32. At this time, the flux 20 remaining in the opening pattern 13 a adheres to the tip of the transfer pin 31 and rises together with the transfer pin 31.

The subsequent steps are the same as those described with reference to FIG. 2 in the first embodiment.
Also according to the present embodiment, the same operation and effect as the first embodiment can be obtained.

  Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the first and second embodiments, the flux 20 is transferred onto the semiconductor device 1 in the state of the semiconductor wafer before being divided into semiconductor chips, and then the solder balls 3 are attached to the lands 2 in the state of the semiconductor wafer. Also good. In the first embodiment, the recess 11 a may be formed on the surface of the stage body 10 without using the surface member 11.

FIGS. 4A to 4D are views for explaining a method for manufacturing a semiconductor device according to the first embodiment. FIGS. (A) And (B) is a figure for demonstrating the next process of FIG. FIGS. 6A to 6D are views for explaining a method for manufacturing a semiconductor device according to a second embodiment. FIGS. (A)-(D) are figures for demonstrating the manufacturing method of the conventional semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,100 ... Semiconductor device, 2,102 ... Land, 3,103 ... Solder ball, 10, 110 ... Stage body, 11, 13 ... Surface member, 11a ... Recess, 12 ... Squeegee, 13a ... Opening pattern, 20, 120 ... Flux, 30, 130 ... Transfer head, 31,131 ... Transfer pin, 32 ... Drive means, 131a ... Between transfer pins

Claims (4)

A plurality of transfer pins with flux attached to the tip;
A stage having a plurality of recesses arranged to correspond to the arrangement of the plurality of transfer pins, and a flux embedded in the plurality of recesses;
Removing means for removing the flux located on the surface of the stage;
Transfer pin driving means for driving the plurality of transfer pins, attaching the flux embedded in the plurality of recesses to the tip of the transfer pin, and transferring the attached flux onto the semiconductor device;
A flux transfer apparatus comprising: The stage is
The stage body,
A surface member disposed on the surface of the stage body and having the plurality of recesses on the surface;
The flux transfer apparatus according to claim 1 comprising: The stage is
The stage body,
A surface member disposed on the surface of the stage body and having a plurality of openings on the surface;
Comprising
The flux transfer device according to claim 1, wherein the plurality of recesses are formed by the plurality of openings and the surface of the stage main body exposed from each of the plurality of openings. Preparing a flux transfer device comprising a plurality of transfer pins to which a flux adheres to the tip and a stage having a plurality of concave portions arranged on the surface so as to correspond to the arrangement of the plurality of transfer pins;
Embedding the flux in each of the plurality of recesses by applying flux to each of the plurality of recesses and the surface of the stage, and then removing the flux located on the surface of the stage;
Transferring the flux to the tips of each of the plurality of transfer pins by lowering the tips of the plurality of transfer pins in each of the plurality of recesses, and then raising the plurality of transfer pins; and
Transferring the flux to the semiconductor device by moving tips of the plurality of transfer pins onto the semiconductor device;
Positioning a solder ball on the flux;
A method for manufacturing a semiconductor device comprising:

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