JP2008146090A5

JP2008146090A5 -

Info

Publication number: JP2008146090A5
Application number: JP2008005042A
Authority: JP
Filing date: 2008-01-11
Publication date: 2008-08-14

Claims

The scanning line and the signal line are arranged at a crossing portion, and include an electro-optic element, a storage capacitor, a sampling transistor, a drive transistor, and a switching transistor connected between the power source and the drive transistor, A driving method of a pixel circuit in which the storage capacitor is connected between a gate and a source of the drive transistor,
When the sampling transistor is selected by a scanning line, an operation of sampling an input signal from the signal line and holding it in the holding capacitor;
When the switching transistor is in an ON state, the drive transistor drives the electro-optic element in accordance with a signal voltage held in the holding capacitor; and
A correction operation for detecting a threshold voltage of the drive transistor prior to current driving of the electro-optic element and holding the detected voltage in the holding capacitor,
The correction operation is as follows:
The driving method of including picture element circuit of the first operation to be applied to the gate of the drive transistor a predetermined voltage to which the drive transistor is turned on.

The correction operation is as follows:
Flowing a current to the drive transistor in the on state in the operation of the first, the drive transistor second work including請 Motomeko 1 wherein the detecting the threshold voltage by reducing the voltage between the gate and the source of the Driving method of the pixel circuit.

The switching transistor, the driving method of the pixel circuit of the drive transistor current flow to請 Motomeko 2 described in an ON state when performing the operation of the second.

The correction operation is as follows:
A predetermined voltage is applied to the gate of the drive transistor to turn on the drive transistor, while the electro-optic element is in a reverse bias state,
The driving method of a pixel circuit 請 Motomeko 1, wherein the current does not flow in the electro-optical element of the one reverse bias state to flow a current to the drive transistor.

It is arranged at the intersection of the scanning line and the signal line,
An electro-optic element;
Holding capacity,
A sampling transistor;
A drive transistor,
A switching transistor connected between a power source and the drive transistor;
The storage capacitor is connected between the gate and source of the drive transistor ,
When the sampling transistor is selected by a scanning line, it samples an input signal from the signal line and holds it in the holding capacitor,
When the switching transistor is in an ON state, the drive transistor drives the electro-optic element in accordance with the signal voltage held in the holding capacitor,
Correction means for detecting a threshold voltage of the drive transistor prior to current driving of the electro-optic element and holding the detected voltage in the holding capacitor;
The correction means includes
Row planted Motokairo a first operation of applying a predetermined voltage to the drive transistor is turned on to the gate of the drive transistor.

The correction means includes
6. The pixel according to claim 5, wherein a current is supplied to the drive transistor that is in an on state in the first operation, and a voltage between the gate and source of the drive transistor is reduced to detect a threshold voltage thereof. circuit.

The pixel circuit according to claim 6, wherein the switching transistor is in an on state when the second operation is performed, and a current flows through the drive transistor.

  The correction means includes
  A predetermined voltage is applied to the gate of the drive transistor to turn on the drive transistor, while the electro-optic element is in a reverse bias state,
  6. The pixel circuit according to claim 5, wherein a current is passed through the drive transistor while no current is passed through the electro-optic element in a reverse bias state.

  It is arranged at the intersection of the scanning line and the signal line,
  An electro-optic element;
  Holding capacity,
  A sampling transistor;
  A drive transistor;
  A switching transistor connected between the power supply and the drive transistor, and a detection transistor,
  The storage capacitor is connected between the gate and source of the drive transistor,
  The sampling transistor is connected between the gate of the drive transistor and the signal line,
  When the sampling transistor is selected by a scanning line, it samples an input signal from the signal line and holds it in the holding capacitor,
  When the switching transistor is in an ON state, the drive transistor drives the electro-optic element in accordance with the signal voltage held in the holding capacitor,
  Correction means for detecting a threshold voltage of the drive transistor prior to current driving of the electro-optic element and holding the detected voltage in the holding capacitor;
  The correction means includes
  A pixel circuit that performs a first operation of applying a predetermined voltage at which the drive transistor is turned on to the gate of the drive transistor through the detection transistor.

The correction means includes
10. The pixel according to claim 9, wherein a current is supplied to the drive transistor that is turned on in the first operation, and a voltage between the gate and the source of the drive transistor is reduced to detect the threshold voltage. 10. circuit.

The pixel circuit according to claim 10, wherein the switching transistor is in an on state when the second operation is performed, and a current flows through the drive transistor.

  The correction means includes
  A predetermined voltage is applied to the gate of the drive transistor to turn on the drive transistor, while the electro-optic element is in a reverse bias state,
  10. The pixel circuit according to claim 9, wherein a current is passed through the drive transistor while no current is passed through the electro-optic element in a reverse bias state.

  It is arranged at the intersection of the scanning line and the signal line,
  An electro-optic element;
  Holding capacity,
  A sampling transistor;
  A drive transistor;
  A switching transistor connected between the power supply and the drive transistor, and a detection transistor,
  The storage capacitor is connected between the gate and source of the drive transistor,
  The sampling transistor is connected between the gate of the drive transistor and the signal line,
  When the sampling transistor is selected by a scanning line, it samples an input signal from the signal line and holds it in the holding capacitor,
  When the switching transistor is in an ON state, the drive transistor drives the electro-optic element in accordance with the signal voltage held in the holding capacitor,
  A pixel circuit having correction means for bringing a source potential and a gate potential of the drive transistor close to each other after applying a predetermined voltage at which the drive transistor is turned on to the gate of the drive transistor through the detection transistor.

The correction means includes
14. The pixel circuit according to claim 13, wherein a current is passed through the drive transistor in the on state to reduce the voltage between the gate and source of the drive transistor and detect the threshold voltage.

The pixel circuit according to claim 14, wherein the correction unit causes a current to flow through the drive transistor when the switching transistor is in an ON state.

  The correction means includes
  A predetermined voltage is applied to the gate of the drive transistor to turn on the drive transistor, while the electro-optic element is in a reverse bias state,
  14. The pixel circuit according to claim 13, wherein a current is passed through the drive transistor while no current flows through the electro-optic element in a reverse bias state.