JP2008135789A - 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置 - Google Patents

窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置 Download PDF

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Publication number
JP2008135789A
JP2008135789A JP2008043214A JP2008043214A JP2008135789A JP 2008135789 A JP2008135789 A JP 2008135789A JP 2008043214 A JP2008043214 A JP 2008043214A JP 2008043214 A JP2008043214 A JP 2008043214A JP 2008135789 A JP2008135789 A JP 2008135789A
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Prior art keywords
electrode
light emitting
light
layer
type layer
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JP2008043214A
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Japanese (ja)
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JP2008135789A5 (https=
Inventor
Takeshi Kususe
健 楠瀬
Daisuke Sanga
大輔 三賀
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Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2008043214A priority Critical patent/JP2008135789A/ja
Publication of JP2008135789A publication Critical patent/JP2008135789A/ja
Publication of JP2008135789A5 publication Critical patent/JP2008135789A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5366Shapes of wire connectors the bond wires having kinks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Devices (AREA)
JP2008043214A 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置 Pending JP2008135789A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008043214A JP2008135789A (ja) 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002152322 2002-05-27
JP2008043214A JP2008135789A (ja) 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Related Parent Applications (1)

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JP2007179135A Division JP2007300134A (ja) 2002-05-27 2007-07-07 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

Publications (2)

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JP2008135789A true JP2008135789A (ja) 2008-06-12
JP2008135789A5 JP2008135789A5 (https=) 2008-07-24

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ID=39560352

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JP2008043214A Pending JP2008135789A (ja) 2002-05-27 2008-02-25 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置

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JP (1) JP2008135789A (https=)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010114411A (ja) * 2008-11-06 2010-05-20 Samsung Electro-Mechanics Co Ltd 化合物半導体発光素子及びその製造方法
JP2010219163A (ja) * 2009-03-13 2010-09-30 Koito Mfg Co Ltd 発光モジュール、および灯具ユニット
WO2011068161A1 (ja) * 2009-12-04 2011-06-09 昭和電工株式会社 半導体発光素子、電子機器および発光装置
KR101136441B1 (ko) * 2008-09-09 2012-04-19 브리지럭스 인코포레이티드 개량된 전극 구조를 구비한 발광 소자
US8188496B2 (en) 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
JP2012114329A (ja) * 2010-11-26 2012-06-14 Toshiba Corp 半導体発光素子及びその製造方法
KR101378950B1 (ko) 2013-01-10 2014-04-17 주식회사 세미콘라이트 반도체 발광소자
US9041033B2 (en) 2012-06-28 2015-05-26 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2015173289A (ja) * 2010-01-07 2015-10-01 ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. 複数の電極パッドを有する発光ダイオード
JP2016024024A (ja) * 2014-07-18 2016-02-08 株式会社堀場製作所 粒子分析装置
KR101611480B1 (ko) 2014-07-10 2016-04-12 주식회사 세미콘라이트 반도체 발광소자
US10008635B2 (en) 2014-06-10 2018-06-26 Semicon Light Co., Ltd. Semiconductor light-emitting element
CN110634853A (zh) * 2018-06-25 2019-12-31 晶元光电股份有限公司 具有可伸张软性载板的发光装置
WO2023248758A1 (ja) * 2022-06-23 2023-12-28 スタンレー電気株式会社 半導体発光装置、接合構造体、および、半導体発光装置の製造方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101136441B1 (ko) * 2008-09-09 2012-04-19 브리지럭스 인코포레이티드 개량된 전극 구조를 구비한 발광 소자
US8916402B2 (en) 2008-11-06 2014-12-23 Samsung Electronics Co., Ltd. Semiconductor light emitting device including substrate having protection layers providing protection against chemicals and method for manufacturing the same
US8188496B2 (en) 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
JP2010114411A (ja) * 2008-11-06 2010-05-20 Samsung Electro-Mechanics Co Ltd 化合物半導体発光素子及びその製造方法
JP2010219163A (ja) * 2009-03-13 2010-09-30 Koito Mfg Co Ltd 発光モジュール、および灯具ユニット
US8592837B2 (en) 2009-12-04 2013-11-26 Toyoda Gosei Co., Ltd. Semiconductor light emitting element, electronic apparatus, and light emitting device
WO2011068161A1 (ja) * 2009-12-04 2011-06-09 昭和電工株式会社 半導体発光素子、電子機器および発光装置
JP2015173289A (ja) * 2010-01-07 2015-10-01 ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. 複数の電極パッドを有する発光ダイオード
JP2012114329A (ja) * 2010-11-26 2012-06-14 Toshiba Corp 半導体発光素子及びその製造方法
US9041033B2 (en) 2012-06-28 2015-05-26 Kabushiki Kaisha Toshiba Semiconductor light emitting device
KR101378950B1 (ko) 2013-01-10 2014-04-17 주식회사 세미콘라이트 반도체 발광소자
US10008635B2 (en) 2014-06-10 2018-06-26 Semicon Light Co., Ltd. Semiconductor light-emitting element
KR101611480B1 (ko) 2014-07-10 2016-04-12 주식회사 세미콘라이트 반도체 발광소자
JP2016024024A (ja) * 2014-07-18 2016-02-08 株式会社堀場製作所 粒子分析装置
US10254213B2 (en) 2014-07-18 2019-04-09 Horiba, Ltd. Particle analysis apparatus
CN110634853A (zh) * 2018-06-25 2019-12-31 晶元光电股份有限公司 具有可伸张软性载板的发光装置
WO2023248758A1 (ja) * 2022-06-23 2023-12-28 スタンレー電気株式会社 半導体発光装置、接合構造体、および、半導体発光装置の製造方法
JP2024002209A (ja) * 2022-06-23 2024-01-11 スタンレー電気株式会社 半導体発光装置、接合構造体、および、半導体発光装置の製造方法
JP7839607B2 (ja) 2022-06-23 2026-04-02 スタンレー電気株式会社 半導体発光装置、および、接合構造体

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