JP2008135626A - Substrate surface processing apparatus and method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enable homogeneous formation of a plated film by electroless plating, suppression of a damage to a wafer substrate 13, and batch processing of the plating and operations after and before the plating. <P>SOLUTION: A substrate processing apparatus comprises a cassette case 100 in which wafer substrates 13 are supported by a plurality of support jigs 12 arranged at the peripheries of the wafer substrates 13 and the wafer substrates 13 supported by the support jigs 12 are rotated about a rotary shaft 16 in a plating solution. Ends of the support jigs 12 are fitted in slits 11a, 11b formed in the outer peripheries of discs 10a, 10b of the cassette case 100 to parallelly support the plurality of wafer substrates 13 in grooves 12a formed in the support jigs 12. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate surface treatment apparatus and a substrate surface treatment method, and more particularly to a substrate surface treatment apparatus used for wet substrate surface treatment and a substrate surface treatment method using the apparatus.

  In semiconductor products equipped with power semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors), Al (aluminum) electrodes provided on the surface of the power semiconductor elements and Al electrode terminals provided in the product are complicated by metal wiring. It is connected.

  Recently, due to the ease of electrical connection, an Au (gold) / Ni (nickel) plating film is formed on the Al electrode and the surface of the Al electrode terminal, and the lead frame is soldered directly via the plating film. The method of doing is becoming common.

  However, the increase in the diameter of the wafer, which is the element substrate, has accelerated, and it has become difficult to form the plating film uniformly within the wafer surface. This is because in a wet process such as plating, the solution diffusion is slower than in the dry process, so that the components of the plating solution in the wafer surface become more non-uniform as the wafer becomes larger in diameter.

  Further, in the recent manufacturing process of power semiconductor elements, there is a process of patterning metal wirings on the wafer surface with high density. Some of these metal wirings are covered with a polyimide film or the like in order to prevent a short circuit that occurs after plating.

  When such a polyimide film is coated on the metal wiring, a step is generated between the exposed portion of the metal wiring surface and the polyimide film, and a plating film formed on the exposed portion, The film thickness of the plating film on the metal wiring formed near the side surface of the polyimide film may vary.

When the film thickness distribution as described above occurs, the following problems may occur at the portions where the plating film is thin and thick after soldering.
For example, in a portion where the plating film is thin, the plating film and the solder layer are diffused, and the solder is directly bonded to the metal wiring. When the material of the metal wiring is Al, for example, the adhesive force between the solder and Al is lower than the adhesive force between the solder and Au / Ni, so that peeling occurs at the interface. Further, in a thick part of the plating film, the plating film may be peeled off due to an increase in stress of the plating film.

  As a means for avoiding such a problem, in electrolytic plating, a method is proposed in which a wafer is placed in a cassette case and plated while rotating the wafer in a plating solution (see, for example, Patent Document 1). .

  In this method, an example is disclosed in which a wafer is set in a cassette case composed of an anode electrode and a cathode electrode in contact with the wafer, and the cassette case is immersed in a plating solution to rotate the cassette case.

According to such a method, it seems that the plating solution is diffused by the rotation of the wafer, so that a uniform plating film can be formed on the wafer.
In addition, in order to form the plating film uniformly, it is necessary to uniformly treat the wafer surface also in processes other than the plating film formation process (for example, etching, cleaning process, etc.). This is because, if there is a difference in the state of the substrate before plating and the etching rate after plating, even if a uniform plating film is formed in the plating process, a uniform plating film cannot be finally obtained.

For such a problem, a method of rotating the wafer in the same way during wet etching has been proposed (see, for example, Patent Documents 2 and 3).
Japanese Patent Laid-Open No. 9-246215 JP 2003-332296 A Japanese Patent Laid-Open No. 10-229066

  However, in the disclosed example of Japanese Patent Laid-Open No. 9-246215, only a cassette case for electrolytic plating is disclosed, and in order to apply a sufficient voltage to the wafer, a cathode electrode support provided on the cassette case is provided. The wafer must be firmly installed.

  Incidentally, the thickness of a power semiconductor wafer in recent years is made as thin as about 0.2 mm in order to reduce the resistance in the element. Further, the thickness of the power semiconductor wafer tends to be further reduced. If such a thin wafer is firmly installed on the cathode electrode support part and the cassette case is rotated, the wafer near the cathode electrode support part is damaged or the entire wafer is cracked by the load of the plating solution. There is a problem.

  Moreover, the cassette case used for electrolytic plating is made of metal in order to have electrical connection with the wafer. In such a metal cassette case, for example, when an acid or alkali treatment is performed before and after the plating process, the metal part is corroded, so that there is a problem that the plating and the treatment before and after the plating cannot be processed by the same cassette case.

  In the disclosed examples of Japanese Patent Application Laid-Open No. 2003-332296 and Japanese Patent Application Laid-Open No. 10-229066, a force is directly applied to the end portion of the wafer to rotate the wafer in the cassette case. In such a method, when a wafer having a thickness of 0.2 mm is used, since the strength of the wafer itself is low, there is a problem that the wafer edge is chipped or the entire wafer is cracked. .

  The present invention has been made in view of such points, and in a substrate surface treatment apparatus used for wet substrate surface treatment and a substrate surface treatment method using the apparatus, a uniform plating film is formed by electroless plating. In addition, an object of the present invention is to provide a substrate surface processing apparatus and a substrate surface processing method using the apparatus capable of suppressing the damage to the plated wafer and performing the plating and the processes before and after the plating.

  In the present invention, in order to solve the above-mentioned problem, in a substrate surface treatment apparatus for treating the surface of a substrate in a solution, a support means for supporting the substrate by a plurality of support jigs arranged around the substrate, and the support jig And a rotation means for rotating the substrate supported by the substrate in the solution.

  In such a substrate surface processing apparatus, in the substrate surface processing apparatus for processing the surface of the substrate in a solution, the substrate is supported by a plurality of support jigs arranged around the substrate, and the substrate supported by the support jig is in the solution. It is rotated by.

  Further, in the present invention, in the substrate surface treatment method for treating the surface of the substrate in a solution, the support means for supporting the substrate with a plurality of support jigs around the substrate, and the substrate supported by the support jig There is provided a substrate surface treatment method characterized in that a surface treatment of the substrate is performed using a substrate surface treatment apparatus provided with a rotating means that rotates in a solution.

  In such a substrate surface treatment method, in the substrate surface treatment method for treating the surface of a substrate in a solution, a support means for supporting the substrate by a plurality of support jigs around the substrate, and a substrate supported by the support jigs as a solution The substrate is surface-treated using a substrate surface treatment apparatus provided with a rotating means that rotates inside.

  In the present invention, in a substrate surface processing apparatus for processing the surface of a substrate in a solution, the substrate is supported by a plurality of support jigs arranged around the substrate, and the substrate supported by the support jig is rotated in the solution. did.

  In the present invention, in the substrate surface treatment method for treating the surface of the substrate in the solution, the support means for supporting the substrate by a plurality of support jigs around the substrate, and the substrate supported by the support jigs are rotated in the solution. The substrate is subjected to surface treatment using a substrate surface treatment apparatus equipped with a rotating means.

  Accordingly, a substrate surface treatment apparatus capable of forming a uniform plating film by the plating process, suppressing damage to the plated wafer, and performing the plating and the processes before and after the plating, and the substrate surface using the apparatus. A processing method can be realized.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
First, the basic structure of a cassette case attached to the inside of the substrate surface processing apparatus of the present invention will be described. As will be described below, the cassette case includes a support jig that can flexibly accommodate a thin wafer substrate.

FIG. 1 is a main part view of the cassette case, (A) is a front view of the main part, and (B) is a side view of the main part. Here, (B) represents the left side surface of FIG.
The cassette case 100 includes two disks 10a and 10b, a plurality of slits 11a and 11b provided radially on the disks 10a and 10b, and a support jig 12. The disc 10a and the disc 10b are support plates for supporting the support jig 12, and the disc 10a and the disc 10b themselves are fixed in parallel by the support jig 12 fitted in the slits 11a and 11b. Yes.

  As for the slits 11a and 11b, a long slit 11a and a short slit 11b are formed in the circumferential direction of the disks 10a and 10b, for example, every 60 °. That is, as shown in this figure, if the short slits 11b are combined, the disk 10a and the disk 10b are fixed by the six support jigs 12. Both ends of the support jig 12 are fixed at the lower part of the slit 11b by bolting or fitting. That is, the slits 11 a and 11 b have a role as a fitting portion that fits both ends of the support jig 12.

  A groove portion 12 a that supports the wafer is provided inside the support jig 12. For example, when an 8-inch diameter wafer substrate 13 (thickness 0.2 mm) made of Si (silicon) is stored in the cassette case 100, the end of the wafer substrate 13 is brought into contact with the groove portion 12a, and the wafer is The substrate 13 is supported so as to be flexibly sandwiched by six support jigs 12 from the outer periphery. Here, the wafer substrate 13 is supported between the end of the wafer substrate 13 and the surface of the groove portion 12a to such an extent that the wafer substrate 13 cannot be completely held between the six support jigs 12 and the wafer substrate 13 is not detached from the groove portion 12a. The wafer substrate 13 may be supported with a certain clearance.

  In addition, about the slits 11a and 11b, the slit of 2 types of length is formed as mentioned above. For example, when the support jig 12 is fitted to the lower part of the slit 11a instead of the slit 11b and fixed at this portion, the distance between the opposing support jigs 12 is fixed to the slit 11b when the support jig 12 is fixed. Compared to the 8-inch wafer substrate 13, the wafer substrate 13 having a diameter shorter than that of the 8-inch wafer substrate 13 can be supported in the cassette case 100.

  The disc 10 a is provided with a pulley 14 via a support base 15 for meshing a rotating belt (described later) in order to rotate the entire cassette case 100. Further, a first rotating shaft 16 is provided at the center of the disk 10a.

  By providing such a pulley 14 and the first rotating shaft 16 in the cassette case 100, the rotation of the pulley 14 given by the rotating belt is transmitted to the cassette case 100 around the first rotating shaft 16, and the wafer The cassette case 100 can be rotated so that the surface of the substrate 13 rotates.

  When the wafer substrate 13 is stored in the cassette case 100, for example, two of the support jigs 12 are not installed in the slit 11b, and the four adjacent support jigs 12 are fixed to the slit 11b in advance. Then, the wafer substrate 13 is inserted from the open space of the cassette case 100 without the support jig so as to be parallel to the discs 10a and 10b, and the wafer substrate is supported by the groove 12a. After repeating such an operation and inserting a desired number of wafer substrates 13, the remaining support jig 12 is placed in the slit 11 b, and a plurality of wafer substrates 13 are accommodated in the cassette case 100.

  In the cassette case 100 shown in FIG. 1, 25 groove portions 12 a are provided in one support jig 12 so that 25 wafer substrates 13 can be accommodated in one cassette case 100. However, the number of the groove portions 12a is not particularly limited to 25, and a plurality of groove portions 12a corresponding to a desired number of stored sheets may be provided in the support jig 12.

  In addition, the number of the discs 10a and 10b is two in this figure. However, the number of the discs 10a and 10b is not particularly limited, and a plurality of discs are inserted between the wafer substrates 13 in order to improve the rigidity of the cassette case 100. May be.

  Further, the number of support jigs 12 is not limited to six, and in order to support wafer substrate 13 evenly with a weaker force, six or more support jigs 12 are installed on a circular plate to support wafer substrate 13. May be.

  Further, the length of the slit is not limited to the above-described two types, and a slit corresponding to the diameter of the wafer substrate other than 8 inches and 6 inches may be provided in the disks 10a and 10b.

  Thus, in the cassette case 100, a plurality of fitting portions, for example, slits 11a and 11b are formed at locations that are equidistant from the rotation axis of the disks 10a and 10b as support plates for supporting the support jig 12. The ends of the support jig 12 are fitted into the slits 11 a and 11 b of the disks 10 a and 10 b, and the plurality of wafer substrates 13 can be supported in parallel in the grooves formed in the support jig 12.

Next, a substrate surface processing apparatus in which the cassette case 100 is installed on the outer frame will be described.
2A and 2B are main part views of the substrate surface treatment apparatus, FIG. 2A is a front view of the main part, and FIG. 2B is a side view of the main part. Here, (B) shows the left side surface as viewed in FIG. In this figure, the same elements as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The cassette case 100 is supported by the first rotating shaft 16 provided in the cassette case 100 in the center of gravity region of the outer frame 20, and the entire cassette case 100 is stored in the outer frame 20. The side and lower surface 20a of the outer frame 20 are wide open so that a plating solution described later sufficiently wraps around to the cassette case 100.

An L-shaped support base 21 is provided on the upper surface 20 b of the outer frame 20, and for example, a motor 22 is installed on the support base 21.
The rotation shaft 22a of the motor 22 passes through the support base 21, and a pulley 23 is installed on the rotation shaft 22a. A resin rotating belt 24 is stretched between the pulley 23 and the pulley 14.

  According to such a substrate surface processing apparatus 200, the rotational movement of the motor 22 is transmitted to the pulley 23, and the drive is transmitted from the pulley 23 to the pulley 14 by the rotating belt 24, so that the entire cassette case 100 is transferred to the surface of the wafer substrate 13. Can be rotated to rotate.

  A second rotating shaft 25 is provided on the upper surface of the outer frame 20. If the rotary shaft 25 is driven to rotate laterally from the outside by, for example, a motor or the like, the substrate surface processing apparatus 200 rotates in the liquid surface direction of the plating solution described later, and at the same time the wafer substrate stored in the cassette case 100 13 can be revolved.

  By the way, the material of each member of the substrate surface treatment apparatus 200 is, for example, a vinyl chloride resin so that it can be used in batches for a chemical cleaning process, a wet etching process and an electroless plating process, or a process in which these processes are continued. Or it is comprised with the fluororesin.

  As described above, the substrate surface processing apparatus 200 includes the supporting means for supporting the wafer substrate 13 by the plurality of supporting jigs 12 arranged around the wafer substrate 13 and the wafer substrate 13 supported by the supporting jig 12 in the plating solution. Rotating means for rotating.

  In the support means, the ends of the support jig 12 are fitted into the slits 11a and 11b formed on the outer circumferences of the disks 10a and 10b, and a plurality of wafer substrates 13 are inserted into the groove portions 12a formed in the support jig 12. Are supported in parallel.

  Further, in the supporting means, a plurality of slits 11a and 11b having different lengths are formed on the outer circumferences of the disks 10a and 10b, and the slit 11a or the slit 11b is selected for a place where the support jig 12 is fitted. The wafer substrates having different diameters can be supported using the support jig 12.

  In the means for rotating the wafer substrate 13, the wafer substrate 13 can rotate within the surface of the wafer substrate 13 in the plating solution. Further, the wafer substrate 13 can revolve in the plating solution in the liquid surface direction of the plating solution.

  According to such a substrate surface treatment apparatus 200, a uniform plating film can be formed by electroless plating, and damage to the plated wafer can be suppressed during plating. Further, as will be described later, the plating and the processes before and after the plating can be performed collectively.

  Next, a plating method and its effect when using the substrate surface treatment apparatus 200 described above will be described. About the effect, the comparative examination at the time of using the cassette case which is not equipped with the rotation mechanism, and the substrate surface treatment apparatus 200 of this invention was performed, and the effect was confirmed.

  Specifically, as an example of a plating film, a NiP film is plated on an 8-inch wafer substrate, and a film thickness of the NiP film formed on the wafer substrate is calculated to calculate a cassette case without a rotating mechanism. And the effect at the time of using the substrate surface processing apparatus 200 of this invention was confirmed.

  FIG. 3 is a main part diagram for explaining a plating method, (A) is a diagram for explaining a plating method when a substrate surface treatment apparatus not equipped with a rotation mechanism is used, and (B) is a diagram showing a rotation mechanism. It is a figure explaining the plating method at the time of using the provided substrate surface processing apparatus. In this figure, the same elements as those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As illustrated, the inside of the plating tank 30 is filled with, for example, a NiP plating solution 31. The NiP plating solution 31 is always sprayed upward from the opening 32 a of the nozzle 32 during the plating. The sprayed NiP plating solution 31 is pumped up from the plating tank 30 by a pump, and is returned to the nozzle 32 again through a filter, although not shown in the figure.

  3A, the 8-inch wafer substrate 13 is housed in a cassette case 33 not provided with a rotation mechanism, and the NiP plating solution 31 is so immersed that the entire surface of the wafer substrate 13 is immersed in the NiP plating solution 31. The cassette case 33 is immersed in the solution 31.

  On the other hand, in FIG. 3B, the substrate surface is placed in the NiP plating solution 31 so that the 8-inch wafer substrate 13 is accommodated in the substrate surface processing apparatus 200 and the entire surface of the wafer substrate 13 is immersed in the NiP plating solution 31. The processing apparatus 200 is immersed. Then, the cassette case 100 is rotated at a rotation speed of 5 rotations / minute to rotate the wafer substrate 13 in the in-plane direction.

Note that the wafer substrate 13 shown in FIGS. 3A and 3B is processed under the same conditions.
Specifically, washing with a chemical solution is performed in advance before plating, and then washing with water is performed. Then, wet etching using an acid or alkali solution is performed. Then, it is washed again and plated. After plating, the wafer substrate 13 is dried by washing with hot water as necessary.

  At this time, since the material of the substrate surface treatment apparatus 200 is a non-conductor composed of, for example, vinyl chloride resin or fluorine resin, the substrate has corrosion resistance even if it is cleaned with a chemical solution or wet etching using an acid or alkali. The surface treatment apparatus 200 does not corrode. Further, since it is a non-conductor, the substrate surface treatment apparatus is not plated even when the plating process is performed.

  Therefore, the substrate surface treatment apparatus 200 can be used for each of chemical liquid cleaning, wet etching, plating, water washing, and hot water washing, and these series of processes can be performed using the same substrate surface treatment apparatus 200. it can.

Each plating condition was performed under the same conditions in FIGS. 3A and 3B except that the wafer substrate 13 housed in the substrate surface processing apparatus 200 was rotated.
FIG. 4 is a diagram for explaining a histogram of the thickness of the NiP film, and FIG. 4 (A) is a diagram for explaining a histogram of the thickness of the NiP film when a substrate surface treatment apparatus not equipped with a rotation mechanism is used. (B) is a figure explaining the histogram of the film thickness of the NiP film at the time of using the substrate surface processing apparatus provided with the rotation mechanism.

  In this figure, the horizontal axis indicates the film thickness of the NiP film, and the vertical axis indicates the frequency of the film thickness. That is, this figure shows that the more concentrated the frequency is on the predetermined film thickness, the smaller the variation in the film thickness of the NiP film.

The acquired data was 5 points for each wafer substrate, and each histogram was obtained from data between a plurality of batches.
In FIG. 4A, the bottom of the histogram spreads from 4.7 to 5.7 μm centering on 5.3 μm. On the other hand, in FIG. 4B, the spread of the bottom of the histogram is formed from 4.9 to 5.5 μm centering on 5.1 μm, but the result that the width of the histogram is narrower than in FIG. It has gained. When the σ value, which is the standard deviation of each histogram, is calculated, it is 0.22 in FIG. 4A and 0.12 in FIG. 4B. Thus, it was found that when plating was performed using the substrate surface treatment apparatus 200 shown in FIG. 2, the σ value of the thickness of the plating film was reduced to about half.

  Further, when the substrate surface treatment apparatus 200 is rotated around the rotating shaft 25 shown in FIG. 2 in the NiP plating solution 31 and the cassette case 100 is revolved, the NiP plating solution 31 on the surface of each wafer substrate 13 accommodated therein. Since the component ratio of becomes more uniform, the σ value is considered to decrease more.

Note that the wafer substrate 13 processed with the configuration shown in FIG. 4B was not chipped or cracked.
Thus, the support means for supporting the wafer substrate 13 around the wafer substrate 13 by the plurality of support jigs 12, and the rotation means for rotating the wafer substrate 13 supported by the support jig 12 in the NiP plating solution 31. The surface of the wafer substrate 13 can be plated using the substrate surface processing apparatus 200 provided.

  The substrate surface processing apparatus 200 is made of a non-conductive material such as vinyl chloride resin or fluororesin, so that the wafer substrate 13 is fitted in the substrate surface processing apparatus 200 with chemical cleaning, wet processing. Of the etching, electroless plating, water washing, and hot water washing, at least two treatments can be performed continuously.

Next, a modified example of the cassette case stored in the substrate surface processing apparatus will be described.
5A and 5B are main part views for explaining a modified example of the cassette case. FIG. 5A is a front view of the main part, and FIG. 5B is a side view of the main part. Here, (B) shows the left side surface as viewed in FIG. In this figure, the same elements as those in FIGS. 1 to 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The cassette case 101 includes two disks 10a and 10b, a plurality of slits 11a and 11b provided radially on the disks 10a and 10b, and a support jig 17. The disc 10a and the disc 10b are fixed in parallel by a support jig 17 fitted in the slits 11a and 11b.

  As for the slits 11a and 11b, a long slit 11a and a short slit 11b are formed every 60 ° in the circumferential direction of the disks 10a and 10b. That is, as shown in this figure, if the short slits 11b are combined, the disk 10a and the disk 10b are fixed by the six support jigs 17. Both ends of the support jig 17 are fixed at the lower part of the slit 11b by bolting or fitting.

  Inside the support jig 17, a groove portion 17a for supporting the wafer is provided. In the cassette case 101, a blade portion 17 b having an L-shaped cross section is provided outside the support jig 17.

  According to the cassette case 101 provided with such blades 17b, the cassette surface 101 is rotated so as to rotate in the in-plane direction of the wafer substrate 13 without providing a drive mechanism such as a motor in the substrate surface processing apparatus. (See below).

  FIG. 6 is a main part view for explaining a plating method using a cassette case provided with blades. In this figure, the same elements as those in FIGS. 1 to 3 and 5 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The cassette case 101 is supported by the first rotating shaft 16 provided in the cassette case 101 in the center of gravity region of the outer frame 20, and the entire cassette case 101 is stored in the outer frame 20. The side and lower surface 20a of the outer frame 20 are wide open so that the plating solution can sufficiently reach the cassette case 101.

Then, the inside of the plating tank 30 is filled with, for example, a NiP plating solution 31 so that the NiP plating solution 31 can be sprayed upward from the opening 32 a of the nozzle 32.
Then, the substrate surface processing apparatus 201 in which the wafer substrate 13 is stored in the cassette case 101 is immersed in the NiP plating solution 31 so that the entire surface of the wafer substrate 13 is immersed in the NiP plating solution 31.

  Then, when the plating solution 31 is sprayed from the opening 32 a of the nozzle 32, the liquid flow of the plating solution 31 is directed upward of the plating tank 30 and applies a force to the blade portion 17 b provided in the cassette case 101. When a force is applied to the blade portion 17b, the cassette case 101 rotates around the rotation shaft 16, and the wafer substrate 13 rotates in the in-plane direction.

  A second rotating shaft 25 is provided on the upper surface of the outer frame 20. If the rotary shaft 25 is rotated in the lateral direction from the outside by, for example, a motor or the like, the substrate surface processing apparatus 201 rotates in the liquid surface direction of the NiP plating solution 31 and at the same time the wafer substrate stored in the cassette case 101. 13 can be revolved.

  As described above, the substrate surface processing apparatus 201 is provided with the blade 17 b on the support jig 17 in the rotating means, and the wafer substrate 13 is moved in the NiP plating solution 31 by the liquid flow in the NiP plating solution 31. Can rotate within.

  According to such a substrate surface treatment apparatus 201, a uniform plating film can be formed by electroless plating, and damage to the plated wafer can be suppressed during plating. Then, the plating and the processes before and after the plating can be performed collectively.

Subsequently, a modification of the substrate surface treatment apparatus using the cassette case 101 shown in FIG. 5 will be described.
FIG. 7 is a main part diagram for explaining a modification of the substrate surface treatment apparatus. In this figure, the same elements as those in FIGS. 1 to 3, 5, and 6 are denoted by the same reference numerals, and detailed description thereof is omitted.

The outer frame 26 of the substrate surface treatment apparatus 202a is provided with a pulley 27, and the pulley 27 can rotate around the rotation main shaft 26a of the outer frame 26.
Further, an arm 28 is joined to the pulley 27, and the arm 28 extends to the outside of the outer frame 26. A first rotating shaft 16 provided in the cassette case 101 is penetrated at the terminal end portion 28 a of the arm 28, so that the cassette case 101 can rotate around the first rotating shaft 16.

  A pulley 23 is provided on the upper surface of the outer frame 26 via a support 21, and a rotating belt 24 is stretched between the pulley 23 and the pulley 27. The pulley 27 can be rotationally driven by a motor (not shown) installed on the back side of the support base 21. Note that the side and lower surface of the outer frame 26 are widely open so that the plating solution can sufficiently reach the cassette case 101.

The inside of the plating tank 30 is filled with, for example, a NiP plating solution 31 so that the NiP plating solution 31 can be sprayed upward from the opening 32 a of the nozzle 32.
Then, the substrate surface treatment apparatus 202 a is immersed in the NiP plating solution 31 so that the entire surface of the wafer substrate 13 stored in the cassette case 101 is immersed in the NiP plating solution 31.

  Then, when the plating solution 31 is sprayed from the opening 32 a of the nozzle 32, the liquid flow of the plating solution 31 is directed upward of the plating tank 30 and applies a force to the blade portion 17 b provided in the cassette case 101. When force is applied to the blade portion 17 b, the cassette case 101 rotates around the rotation shaft 16, and the wafer substrate 13 rotates in the in-plane direction of the wafer substrate 13 around the rotation shaft 16.

  Furthermore, if the pulley 23 is rotationally driven by the motor described above, the pulley 27 can be rotated by the rotating belt 24, and the terminal portion 28a of the arm 28 is turned around the rotation main shaft 26a in the outer frame 26. be able to. At this time, the rotating shaft 16 of the cassette case 101 is provided through the end portion 28 a of the arm 28. Therefore, in this substrate surface treatment apparatus 202a, the cassette case 101 can be turned around the rotation main shaft 26a and simultaneously rotated around the rotation shaft 16.

  A second rotating shaft 25 is provided on the upper surface of the outer frame 26. If the rotary shaft 25 is rotated in the lateral direction from the outside by a motor or the like, for example, the substrate surface processing apparatus 202a rotates in the liquid surface direction of the NiP plating solution 31, and at the same time, the wafer substrate stored in the cassette case 101. 13 can be revolved.

  In this figure, in order to explain the rotation operation of the cassette case 101 around the rotation main shaft 26a with one cassette case 101 installed on the outer frame 26, the portions drawn with dotted lines are temporarily It shows that there was a cassette case in that part.

  However, the number of cassette cases 101 is not limited to one, and a plurality of cassette cases 101 may be installed on the outer frame 26 via the arms 28 so that the cassette cases 101 do not contact each other. As a result, a larger number of wafer substrates 13 can be plated in a single process.

  As described above, the substrate surface processing apparatus 202a has a rotating means in which the pulley 27 is installed on the rotation main shaft 26a of the substrate surface processing apparatus 202a, and the first rotation is performed on the end portion 28a of the arm 28 extended from the pulley 27. The shaft 16 is attached, and the wafer substrate 13 can be swung in the NiP plating solution 31 by rotating the arm 28 around the rotation main shaft 26a.

  According to such a substrate surface processing apparatus 202a, a uniform plating film can be formed by electroless plating, and damage to the plated wafer can be suppressed during plating. Then, the plating and the processes before and after the plating can be performed collectively.

FIG. 8 is a main part diagram for explaining a modification of the substrate surface treatment apparatus. In this figure, the same elements as those in FIGS. 1 to 3 and FIGS. 5 to 7 are denoted by the same reference numerals, and detailed description thereof is omitted.
A pulley 27 is provided on the outer frame 26 of the substrate surface treatment apparatus 202b, and the pulley 27 can rotate around the rotation main shaft 26a of the outer frame 26.

  Further, an arm 28 is joined to the pulley 27. A first rotating shaft 16 provided in the cassette case 100 is penetrated through the terminal end portion 28 a of the arm 28 so that the cassette case 100 can rotate around the first rotating shaft 16.

  A pulley 23 is provided on the upper surface of the outer frame 26 via a support 21, and a rotating belt 24 is stretched between the pulley 23 and the pulley 27. The pulley 27 can be rotationally driven by a motor (not shown) installed on the back side of the support base 21.

  Further, the outer frame 26 of the substrate surface processing apparatus 202 b is provided with a pulley 40, and the pulley 40 can rotate around the rotation main shaft 26 a of the outer frame 26 together with the pulley 27.

  A pulley 41 is also provided through the first rotating shaft 16 provided in the cassette case 100 so that the cassette case 100 can be rotated around the first rotating shaft 16 by the rotation of the pulley 41. . A rotating belt 42 is stretched between the pulley 40 and the pulley 41.

The side and the lower surface of the outer frame 26 are widely open so that the plating solution can sufficiently reach the cassette case 100.
The inside of the plating tank 30 is filled with, for example, a NiP plating solution 31 so that the NiP plating solution 31 can be sprayed upward from the opening 32 a of the nozzle 32.

  Then, the substrate surface treatment apparatus 202b is immersed in the NiP plating solution 31 so that the entire surface of the wafer substrate 13 stored in the cassette case 100 is immersed in the NiP plating solution 31. Then, the plating solution 31 is sprayed from the opening 32 a of the nozzle 32.

  When the pulley 23 is rotationally driven by the motor described above, the pulley 27 can be rotated by the rotating belt 24, and the terminal portion 28a of the arm 28 is turned around the rotation main shaft 26a in the outer frame 26. be able to. At this time, since the pulley 40 rotates together with the pulley 23, the pulley 41 spanned by the rotating belt 42 also rotates. Therefore, in the substrate surface treatment apparatus 202b, the cassette case 100 can be rotated about the rotation shaft 16 while the cassette case 100 is rotated about the rotation main shaft 26a.

  A second rotating shaft 25 is provided on the upper surface of the outer frame 26. If the rotary shaft 25 is rotated in the lateral direction from the outside by a motor or the like, for example, the substrate surface processing apparatus 202b rotates in the liquid surface direction of the NiP plating solution 31, and at the same time the wafer substrate stored in the cassette case 100. 13 can be revolved.

  In this figure, in order to explain the rotation operation of the cassette case 100 around the rotation main shaft 26a with one cassette case 100 installed on the outer frame 26, the portions drawn with dotted lines are temporarily It shows that the cassette case 100 was present at that portion.

  However, the number of cassette cases 100 is not limited to one, and a plurality of cassette cases 100 may be installed on the outer frame 26 via the arms 28 so that the cassette cases 100 do not contact each other. As a result, a larger number of wafer substrates 13 can be plated in a single process.

  As described above, the substrate surface processing apparatus 202b has a rotating means in which the pulley 27 is installed on the rotation main shaft 26a of the substrate surface processing apparatus 202b, and the first rotation is performed on the end portion 28a of the arm 28 extended from the pulley 27. The shaft 16 is attached, and the wafer substrate 13 can be swung in the NiP plating solution 31 by rotating the arm 28 around the rotation main shaft 26a.

  In the substrate surface treatment apparatus 202b, the rotating belt 42 is stretched between the pulley 40 installed on the rotating main shaft 26a and the pulley 41 installed on the first rotating shaft 16. Then, by rotating the arm 28 around the rotation main shaft 26a, the wafer substrate 13 can be rotated while rotating in the NiP plating solution 31.

  According to such a substrate surface treatment apparatus 202b, a uniform plating film can be formed by electroless plating, and damage to the plated wafer can be suppressed during plating. Then, the plating and the processes before and after the plating can be performed collectively.

FIG. 9 is a main part diagram for explaining a modification of the substrate surface treatment apparatus. In this figure, the same elements as those in FIGS. 1 to 3 and FIGS. 5 to 8 are denoted by the same reference numerals, and detailed description thereof is omitted.
In this embodiment, a trapezoidal support plate 50a, for example, is provided on the bottom of the bowl-shaped outer frame 50, and a U-shaped bearing portion 50b is formed on the support plate 50a. The first rotating shaft 16 is placed inside the bearing portion 50b, and the cassette case 101 can be easily detached from the outer frame 50. The entire cassette case 101 is stored in the outer frame 50. Further, the side and lower surface 50c of the outer frame 50 are wide open so that the plating solution can sufficiently reach the cassette case 101.

Then, the inside of the plating tank 30 is filled with, for example, a NiP plating solution 31 so that the NiP plating solution 31 can be sprayed upward from the opening 32 a of the nozzle 32.
Then, the substrate surface processing apparatus 203 in which the wafer substrate 13 is accommodated in the cassette case 101 is immersed in the NiP plating solution 31 so that the entire surface of the wafer substrate 13 is immersed in the NiP plating solution 31.

  Then, when the plating solution 31 is sprayed from the opening 32 a of the nozzle 32, the liquid flow of the plating solution 31 is directed upward of the plating tank 30 and applies a force to the blade portion 17 b provided in the cassette case 101. When a force is applied to the blade portion 17b, the cassette case 101 rotates around the rotation shaft 16, and the wafer substrate 13 rotates in the in-plane direction.

  A second rotating shaft 25 is provided above the outer frame 50. If the rotary shaft 25 is rotated laterally from the outside by, for example, a motor or the like, the substrate surface processing apparatus 203 rotates in the liquid surface direction of the NiP plating solution 31 and simultaneously the wafer substrate stored in the cassette case 101. 13 can be revolved.

  As described above, the substrate surface processing apparatus 203 is provided with the blade 17 b in the support jig 17 in the rotating means, and the wafer substrate 13 is moved in the NiP plating solution 31 by the liquid flow in the NiP plating solution 31. Can rotate within.

  According to such a substrate surface processing apparatus 203, a uniform plating film can be formed by electroless plating, and damage to the plated wafer can be suppressed during plating. Then, the plating and the processes before and after the plating can be performed collectively. Further, the cassette case 101 can be easily detached from the outer frame 50, so that labor can be saved.

Then, the modification of said disk 10a, 10b which is a support plate is demonstrated.
FIG. 10 is a main part diagram for explaining a modified example of the disc. In this figure, the same elements as those in FIGS. 1 to 3 and FIGS. 5 to 9 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As described above, the disk 10 c is a support plate that supports the support jig 12. And the some disc 10c is fixed in parallel with the support jig 12 fitted by penetration part 11c, 11d.

  A plurality of fitting portions for fitting the support jig 12 and the disc 10c, that is, the through portions 11c and 11d, are formed, and each of them changes the distance from the rotation axis of the disc 10c, thereby changing the disc 10c. It is installed in the position which becomes equidistant toward the outer periphery of. The shape is, for example, a square shape, and is a hole opening through the disk 10c.

Then, by changing the place where the support jig 12 is fitted, wafer substrates having different diameters can be supported using the support jig 12.
In this figure, four penetrating parts 11c and 11d are formed, and four supporting jigs 12 are fixed to the disk 10c. However, the number of penetrating parts 11c and 11d is particularly limited to this number. It is not limited. In order to stably support the wafer substrate, other numbers of through portions 11c and 11d may be formed in the disc 10c.

Further, the penetrating portions 11c and 11d do not need to penetrate the disc 10c, and may be concave portions that can fit the convex portions 12b of the supporting jig 12 and the penetrating portions 11c and 11d.
Thus, a plurality of fitting portions, for example, through portions 11c and 11d are formed at equal distances from the rotational axis of the disk 10c as a support plate for supporting the support jig 12, and the through portions 11c and 11d The ends of the support jig 12 can be fitted, and a plurality of wafer substrates can be supported in parallel in the grooves formed in the support jig 12.

  According to the substrate surface treatment apparatus using such a disk 10c, a uniform plating film can be formed by electroless plating, and damage to the plated wafer can be suppressed during plating. Moreover, the plating and the processes before and after the plating can be performed at once.

FIG. 11 is a main part diagram for explaining a modification of the disc.
As described above, the disk 10d is a support plate that supports the support jig 12 shown in FIG. A plurality of discs 10d are fixed in parallel by the support jig 12 fitted in the slit 11e.

A plurality of fitting portions for fitting the support jig 12 and the disk 10d, that is, the slits 11e are formed.
In the disk 10d, the center line of the slit 11e is not on the diameter direction of the disk 10d, but the center line and the diameter direction have a predetermined angle θ and Is formed.

  In this figure, each of the four slits 11e is provided, and the four support jigs 12 are fixed to the disk 10d. However, the number of slits 11e is not particularly limited to this number. In order to stably support the wafer substrate, other number of slits 11e may be formed in the disk 10d.

  Further, by forming a plurality of slits having different lengths on the outer periphery of the disk 10d, wafer substrates having different diameters can be supported by a cassette case having the disk 10d and a supporting jig.

  Thus, a plurality of fitting portions, for example, slits 11e are formed at equal distances from the rotation axis of the disk 10d as a support plate for supporting the support jig, and the ends of the support jig are fitted into the slits 11e. In addition, a plurality of wafer substrates can be supported in parallel in the grooves formed in the support jig.

  According to the substrate surface treatment apparatus using such a disk 10d, a uniform plating film can be formed by electroless plating, and damage to the plated wafer can be suppressed during plating. Moreover, the plating and the processes before and after the plating can be performed at once.

12A and 12B are main part views for explaining a modified example of the cassette case. FIG. 12A is a front view of the main part and FIG. 12B is a side view of the main part.
The cassette case 102 includes two discs 10e and 10f, a supporting jig 12, and a blade portion 10g directly installed on the discs 10e and 10f. The discs 10 e and 10 f are support plates that support the support jig 12. The disks 10e and 10f are fitted by the support jig 12 and fixed in parallel. Here, the method of fitting the support jig 12 may be a method of fitting in the slit, or a method of fitting in the through portion or the recess (not shown).

Here, in the cassette case 102, as described above, for example, the distorted blade portion 10g is directly provided on the side surfaces of the discs 10e and 10f.
When the substrate surface treatment apparatus containing such a cassette case 102 is immersed in the NiP plating solution 31 shown in FIG. 3, the plating solution 31 is jetted from the opening 32a of the nozzle 32, and the liquid flow causes the blade portion 10g to flow. A force is applied, the cassette case 102 rotates, and the wafer substrate rotates in its in-plane direction.

  In this figure, four blade portions 10g are provided in one disc, but the number is not particularly limited to this number. In order to stably rotate the wafer substrate, blades 10g other than this number may be formed on the respective discs 10e and 10f.

  According to the substrate surface processing apparatus using such a cassette case 102, a uniform plating film can be formed by electroless plating, and damage to the plated wafer can be suppressed during plating. Moreover, the plating and the processes before and after the plating can be performed at once.

It is a principal part figure of a cassette case, (A) is a principal part front view, (B) is a principal part side view. It is a principal part figure of a substrate surface treatment apparatus, (A) is a principal part front view, (B) is a principal part side view. It is a principal part figure explaining the plating method, (A) is a figure explaining the plating method at the time of using the substrate surface treatment apparatus which is not equipped with the rotation mechanism, (B) is equipped with the rotation mechanism. It is a figure explaining the plating method at the time of using a substrate surface treatment apparatus. It is a figure explaining the histogram of the film thickness of a NiP film, (A) is a figure explaining the histogram of the film thickness of a NiP film at the time of using the substrate surface treatment apparatus which is not provided with the rotation mechanism, (B) FIG. 6 is a diagram for explaining a histogram of the film thickness of a NiP film when a substrate surface treatment apparatus having a rotation mechanism is used. It is a principal part figure explaining the modification of a cassette case, (A) is a principal part front view, (B) is a principal part side view. It is a principal part figure explaining the method of plating using the cassette case provided with the blade | wing part. It is a principal part figure explaining the modification of a substrate surface treatment apparatus (the 1). It is a principal part figure explaining the modification of a substrate surface treatment apparatus (the 2). It is a principal part figure explaining the modification of a substrate surface treatment apparatus (the 3). It is a principal part figure explaining the modification of a disc (the 1). It is a principal part figure explaining the modification of a disc (the 2). It is a principal part figure explaining the modification of a cassette case, (A) is a principal part front view, (B) is a principal part side view.

Explanation of symbols

10a, 10b, 10c, 10d, 10e, 10f Disc 10g, 17b Blade 11a, 11b, 11e Slit 11c, 11d Through 12, 12, Support jig 12a, 17a Groove 12b Protrusion 13 Wafer substrate 14, 23, 27, 40, 41 Pulley 15, 21 Support base 16, 22a, 25 Rotating shaft 20, 26, 50 Outer frame 20a, 50c Lower surface 20b Upper surface 22 Motor 24, 42 Rotating belt 26a Rotating main shaft 28 Arm 28a Termination portion 30 Metal tank 31 NiP plating Solution 32 Nozzle 32a Opening 33, 100, 101, 102 Cassette case 50a Support plate 50b Bearing 200, 201a, 201b, 202a, 202b, 203 Substrate surface treatment apparatus

Claims (15)

In a substrate surface treatment apparatus for treating the surface of a substrate in a solution,
Support means for supporting the substrate by a plurality of support jigs arranged around the substrate;
Rotating means for rotating the substrate supported by the support jig in the solution;
A substrate surface treatment apparatus comprising:   The substrate surface treatment apparatus according to claim 1, wherein a material of the substrate surface treatment apparatus is a non-conductor. The support means includes a support plate having a plurality of fitting portions formed at equal distances from the rotation axis;
The support jig formed with a plurality of grooves,
The end of the support jig is fitted into the fitting portion of the support plate, and a plurality of the substrates are supported in parallel in a groove formed in the support jig. Substrate surface treatment equipment.   A plurality of the fitting portions having different distances from the rotating shaft core are formed on the support plate, and the place of the fitting portion to which the support jig is fitted is changed so that the substrates having different diameters are attached to the support jig. The substrate surface treatment apparatus according to claim 1, wherein the substrate surface treatment apparatus can be supported by using the substrate.   5. The substrate surface treatment apparatus according to claim 3, wherein the fitting portion is a slit formed in the support plate from an outer periphery of the support plate to a position that is equidistant from the rotation axis. .   5. The substrate surface treatment apparatus according to claim 3, wherein the fitting portion is a through portion or a concave portion installed at a position that is equidistant from the rotation axis toward the outer periphery of the support plate.   The substrate surface treatment apparatus according to claim 1, wherein the rotating unit rotates the substrate in the solution within the surface of the substrate.   The substrate surface treatment apparatus according to claim 1, wherein the rotating unit revolves the substrate in the solution in a liquid surface direction of the solution.   2. The rotating device according to claim 1, wherein a blade portion is provided on the support jig or the support plate, and the substrate rotates in the surface of the substrate in the solution by a liquid flow in the solution. The substrate surface treatment apparatus according to claim 8.   The substrate surface treatment apparatus according to claim 9, wherein the rotation shaft of the support plate is placed on a bearing portion.   In the rotating means, a pulley is installed on a rotation main shaft of the substrate surface treatment apparatus, a rotation shaft of the support plate is attached to a terminal end of an arm extended from the pulley, and the arm is centered on the rotation main shaft. The substrate surface treatment apparatus according to claim 1, wherein the substrate is rotated while rotating in the solution by being rotated.   In the rotation means, a first pulley is installed on a rotation main shaft of the substrate surface treatment apparatus, and a rotation shaft of the support plate is attached to a terminal end of an arm extended from the first pulley. And a second pulley installed on the rotating shaft of the support plate, and a belt is stretched over, and the substrate rotates in the solution by rotating the arm around the rotating main shaft. The substrate surface processing apparatus according to any one of claims 1 to 8, wherein the substrate surface processing apparatus rotates.   The substrate surface treatment apparatus according to any one of claims 1 to 12, wherein the substrate surface treatment is at least one of electroless plating, wet etching, chemical solution washing, water washing, and hot water washing. In a substrate surface treatment method for treating a surface of a substrate in a solution,
Support means for supporting the substrate around the substrate by a plurality of support jigs;
Rotating means for rotating the substrate supported by the support jig in the solution;
Using a substrate surface treatment apparatus equipped with
A substrate surface treatment method comprising performing a surface treatment on the substrate.   The at least two processes among chemical cleaning, wet etching, electroless plating, water washing, and hot water washing are continuously performed while the substrate is fitted in the substrate surface processing apparatus. 14. The substrate surface treatment method according to 14.

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