JP2008127326A - New di(pyridylphenyl) derivative, electron transport material comprising the same and organic electroluminescent device containing the same - Google Patents
New di(pyridylphenyl) derivative, electron transport material comprising the same and organic electroluminescent device containing the same Download PDFInfo
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- JP2008127326A JP2008127326A JP2006313385A JP2006313385A JP2008127326A JP 2008127326 A JP2008127326 A JP 2008127326A JP 2006313385 A JP2006313385 A JP 2006313385A JP 2006313385 A JP2006313385 A JP 2006313385A JP 2008127326 A JP2008127326 A JP 2008127326A
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- 239000000463 material Substances 0.000 title claims abstract description 63
- 238000005401 electroluminescence Methods 0.000 claims description 28
- 125000004432 carbon atom Chemical group C* 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 154
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 94
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 69
- 230000000052 comparative effect Effects 0.000 description 64
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 63
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 62
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 44
- 230000005525 hole transport Effects 0.000 description 39
- 238000002347 injection Methods 0.000 description 37
- 239000007924 injection Substances 0.000 description 37
- 239000002904 solvent Substances 0.000 description 32
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 29
- 239000007787 solid Substances 0.000 description 29
- 230000015572 biosynthetic process Effects 0.000 description 26
- 229910052757 nitrogen Inorganic materials 0.000 description 26
- 238000001194 electroluminescence spectrum Methods 0.000 description 25
- 238000003786 synthesis reaction Methods 0.000 description 25
- NSABRUJKERBGOU-UHFFFAOYSA-N iridium(3+);2-phenylpyridine Chemical compound [Ir+3].[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 NSABRUJKERBGOU-UHFFFAOYSA-N 0.000 description 24
- 239000012044 organic layer Substances 0.000 description 24
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 22
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 21
- 239000000047 product Substances 0.000 description 21
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 19
- 0 CCC/C=C(/C=C/*)\c1cc(-c2nc(C)nc(-c3cc(-c4ccncc4)cc(/C(/C=C)=C\C=[N+])c3)c2)cc(/C(/C=C/[N+])=C\C)c1 Chemical compound CCC/C=C(/C=C/*)\c1cc(-c2nc(C)nc(-c3cc(-c4ccncc4)cc(/C(/C=C)=C\C=[N+])c3)c2)cc(/C(/C=C/[N+])=C\C)c1 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 238000005160 1H NMR spectroscopy Methods 0.000 description 17
- 150000001875 compounds Chemical class 0.000 description 16
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 16
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 15
- 230000005587 bubbling Effects 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000000243 solution Substances 0.000 description 15
- 238000000862 absorption spectrum Methods 0.000 description 13
- 239000011541 reaction mixture Substances 0.000 description 13
- 238000010898 silica gel chromatography Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- -1 4,6-difluorophenyl Chemical group 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 11
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 10
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000000746 purification Methods 0.000 description 8
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 7
- 230000005281 excited state Effects 0.000 description 7
- 239000007983 Tris buffer Substances 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 6
- DKYRKAIKWFHQHM-UHFFFAOYSA-N (3,5-dichlorophenyl)boronic acid Chemical compound OB(O)C1=CC(Cl)=CC(Cl)=C1 DKYRKAIKWFHQHM-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 5
- 229910000160 potassium phosphate Inorganic materials 0.000 description 5
- 235000011009 potassium phosphates Nutrition 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000004440 column chromatography Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- KZPYGQFFRCFCPP-UHFFFAOYSA-N 1,1'-bis(diphenylphosphino)ferrocene Chemical compound [Fe+2].C1=CC=C[C-]1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=C[C-]1P(C=1C=CC=CC=1)C1=CC=CC=C1 KZPYGQFFRCFCPP-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- LSCHEOJAHZGMJK-UHFFFAOYSA-N 3-(3-bromo-5-pyridin-3-ylphenyl)pyridine Chemical compound C=1C(Br)=CC(C=2C=NC=CC=2)=CC=1C1=CC=CN=C1 LSCHEOJAHZGMJK-UHFFFAOYSA-N 0.000 description 3
- 125000003349 3-pyridyl group Chemical group N1=C([H])C([*])=C([H])C([H])=C1[H] 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 101150003085 Pdcl gene Proteins 0.000 description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 235000011056 potassium acetate Nutrition 0.000 description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 3
- YWDUZLFWHVQCHY-UHFFFAOYSA-N 1,3,5-tribromobenzene Chemical compound BrC1=CC(Br)=CC(Br)=C1 YWDUZLFWHVQCHY-UHFFFAOYSA-N 0.000 description 2
- XAGZJIQIVXSURR-UHFFFAOYSA-N 1-[4-(trifluoromethyl)phenyl]piperidin-2-one Chemical group C1=CC(C(F)(F)F)=CC=C1N1C(=O)CCCC1 XAGZJIQIVXSURR-UHFFFAOYSA-N 0.000 description 2
- MFCDXOWCCDJHSC-UHFFFAOYSA-N 3,5-bis(3,5-dipyridin-3-ylphenyl)pyridine Chemical compound C1=CN=CC(C=2C=C(C=C(C=2)C=2C=NC=CC=2)C=2C=C(C=NC=2)C=2C=C(C=C(C=2)C=2C=NC=CC=2)C=2C=NC=CC=2)=C1 MFCDXOWCCDJHSC-UHFFFAOYSA-N 0.000 description 2
- BDOOZZQGKBKQCH-UHFFFAOYSA-N 3-(3,5-dibromophenyl)pyridine Chemical compound BrC1=CC(Br)=CC(C=2C=NC=CC=2)=C1 BDOOZZQGKBKQCH-UHFFFAOYSA-N 0.000 description 2
- XEMDFESAXKSEGI-UHFFFAOYSA-N 3-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)pyridine Chemical compound O1C(C)(C)C(C)(C)OB1C1=CC=CN=C1 XEMDFESAXKSEGI-UHFFFAOYSA-N 0.000 description 2
- GJOQDMDAOILILO-UHFFFAOYSA-N 4-(3,5-dibromophenyl)pyridine Chemical compound BrC1=CC(Br)=CC(C=2C=CN=CC=2)=C1 GJOQDMDAOILILO-UHFFFAOYSA-N 0.000 description 2
- 125000000339 4-pyridyl group Chemical group N1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 2
- VVXXCUBFVDWIDU-CPKNDRLSSA-N C/C=C\C(\[Si](/C(/C=C\C=C)=C/C)(c1ccccc1)c1ccccc1)=C/C=C Chemical compound C/C=C\C(\[Si](/C(/C=C\C=C)=C/C)(c1ccccc1)c1ccccc1)=C/C=C VVXXCUBFVDWIDU-CPKNDRLSSA-N 0.000 description 2
- AHRCQDBFPDZEBY-UHFFFAOYSA-N C1=C(C=C(C=C1Cl)Cl)C2=CSC=C2C3=CC(=CC(=C3)Cl)Cl Chemical compound C1=C(C=C(C=C1Cl)Cl)C2=CSC=C2C3=CC(=CC(=C3)Cl)Cl AHRCQDBFPDZEBY-UHFFFAOYSA-N 0.000 description 2
- DEBKFSABVVIBPG-UHFFFAOYSA-N Cc1cc(-c2cccnc2)cc(-c2cnccc2)c1 Chemical compound Cc1cc(-c2cccnc2)cc(-c2cnccc2)c1 DEBKFSABVVIBPG-UHFFFAOYSA-N 0.000 description 2
- NNZCRHWOSCNVTH-UHFFFAOYSA-N Cc1cc(-c2ccncc2)cc(-c2ccncc2)c1 Chemical compound Cc1cc(-c2ccncc2)cc(-c2ccncc2)c1 NNZCRHWOSCNVTH-UHFFFAOYSA-N 0.000 description 2
- NGXCVSVBLNONKL-UHFFFAOYSA-N ClC=1C=C(C=C(C1)Cl)C1=NC(=CC=C1)C1=CC(=CC(=C1)Cl)Cl Chemical compound ClC=1C=C(C=C(C1)Cl)C1=NC(=CC=C1)C1=CC(=CC(=C1)Cl)Cl NGXCVSVBLNONKL-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 229910001508 alkali metal halide Inorganic materials 0.000 description 2
- 150000008045 alkali metal halides Chemical class 0.000 description 2
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- AOZVYCYMTUWJHJ-UHFFFAOYSA-K iridium(3+) pyridine-2-carboxylate Chemical compound [Ir+3].[O-]C(=O)C1=CC=CC=N1.[O-]C(=O)C1=CC=CC=N1.[O-]C(=O)C1=CC=CC=N1 AOZVYCYMTUWJHJ-UHFFFAOYSA-K 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 235000019341 magnesium sulphate Nutrition 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- VLRICFVOGGIMKK-UHFFFAOYSA-N pyrazol-1-yloxyboronic acid Chemical compound OB(O)ON1C=CC=N1 VLRICFVOGGIMKK-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 2
- ZRXVCYGHAUGABY-UHFFFAOYSA-O tris(4-bromophenyl)azanium Chemical compound C1=CC(Br)=CC=C1[NH+](C=1C=CC(Br)=CC=1)C1=CC=C(Br)C=C1 ZRXVCYGHAUGABY-UHFFFAOYSA-O 0.000 description 2
- NRHIIVAOUQAGJS-UHFFFAOYSA-M (4-phenylphenoxy)aluminum Chemical compound C1=CC(O[Al])=CC=C1C1=CC=CC=C1 NRHIIVAOUQAGJS-UHFFFAOYSA-M 0.000 description 1
- GMVJKSNPLYBFSO-UHFFFAOYSA-N 1,2,3-tribromobenzene Chemical compound BrC1=CC=CC(Br)=C1Br GMVJKSNPLYBFSO-UHFFFAOYSA-N 0.000 description 1
- DPKKOVGCHDUSAI-UHFFFAOYSA-N 1,3-dibromo-5-methylbenzene Chemical compound CC1=CC(Br)=CC(Br)=C1 DPKKOVGCHDUSAI-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- JPDUPGAVXNALOL-UHFFFAOYSA-N 1-n,1-n,4-n,4-n-tetraphenylbenzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 JPDUPGAVXNALOL-UHFFFAOYSA-N 0.000 description 1
- SPDPTFAJSFKAMT-UHFFFAOYSA-N 1-n-[4-[4-(n-[4-(3-methyl-n-(3-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-4-n,4-n-bis(3-methylphenyl)-1-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SPDPTFAJSFKAMT-UHFFFAOYSA-N 0.000 description 1
- WAQFYSJKIRRXLP-UHFFFAOYSA-N 2,4-dibromothiophene Chemical compound BrC1=CSC(Br)=C1 WAQFYSJKIRRXLP-UHFFFAOYSA-N 0.000 description 1
- KBVDUUXRXJTAJC-UHFFFAOYSA-N 2,5-dibromothiophene Chemical compound BrC1=CC=C(Br)S1 KBVDUUXRXJTAJC-UHFFFAOYSA-N 0.000 description 1
- CYVFDXWPPDZBDK-UHFFFAOYSA-N 2,6-bis(3,5-dipyridin-3-ylphenyl)pyridine Chemical compound C1=CN=CC(C=2C=C(C=C(C=2)C=2C=NC=CC=2)C=2N=C(C=CC=2)C=2C=C(C=C(C=2)C=2C=NC=CC=2)C=2C=NC=CC=2)=C1 CYVFDXWPPDZBDK-UHFFFAOYSA-N 0.000 description 1
- FEYDZHNIIMENOB-UHFFFAOYSA-N 2,6-dibromopyridine Chemical compound BrC1=CC=CC(Br)=N1 FEYDZHNIIMENOB-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
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- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001298 n-hexoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 150000004880 oxines Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-M picolinate Chemical compound [O-]C(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-M 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
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- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
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- Electroluminescent Light Sources (AREA)
- Pyridine Compounds (AREA)
- Plural Heterocyclic Compounds (AREA)
Abstract
Description
本発明は、新規なジ(ピリジルフェニル)誘導体、それよりなる電子輸送材料およびそれを含む有機エレクトロルミネッセンス素子(有機EL素子)に関する。 The present invention relates to a novel di (pyridylphenyl) derivative, an electron transport material comprising the same, and an organic electroluminescence device (organic EL device) containing the same.
有機エレクトロルミネッセンス素子は、電極から注入されたホールと電極の再結合によって生成した励起エネルギーが発光過程を経て基底状態に緩和されることにより自発光する。しかしながら、ホールと電子の再結合によって生成する励起状態には一重項励起状態と三重項励起状態の2種類がそれぞれ1対3の割合で存在する。これまでの多くは一重項励起状態からの発光を利用した蛍光材料が発光材料に利用されていたため、内部量子効率が最大で25%であるので、この時取り出し効率を20%とすると、最大外部量子効率は5%が理論限界であった。 The organic electroluminescent element emits light by excitation energy generated by recombination of holes injected from the electrode and the electrode being relaxed to a ground state through a light emission process. However, there are two types of excited states generated by recombination of holes and electrons, a singlet excited state and a triplet excited state, in a ratio of 1: 3. In many cases, a fluorescent material utilizing light emission from a singlet excited state has been used as a light emitting material, and therefore, the internal quantum efficiency is 25% at the maximum. The quantum efficiency was the theoretical limit of 5%.
近年、イリジウムやプラチナなどの重原子効果を利用した錯体化合物を用い三重項励起状態からの発光、すなわちリン光発光を用いることにより発光効率の向上が報告されるようになった(例えば、非特許文献1)。一重項励起状態に加え、三重項励起状態からの発光を利用することで最大内部量子効率は理論上100%に到達することが可能で、リン光材料は発光材料として注目を浴びている(非特許文献3)。 In recent years, improvement in luminous efficiency has been reported by using light emission from a triplet excited state, that is, phosphorescence emission, using a complex compound utilizing a heavy atom effect such as iridium or platinum (for example, non-patented) Reference 1). The maximum internal quantum efficiency can theoretically reach 100% by utilizing light emission from the triplet excited state in addition to the singlet excited state, and phosphorescent materials are attracting attention as light emitting materials (non Patent Document 3).
例えば緑色材料として、下記式
また安達らによる非特許文献2などにより青色発光材料である下記式
その結果最近ではS.R.Forrestらによる非特許文献1では下記式
これら発光材料を効率よく発光させるにはホールと電子の注入バランスを整えて、発光層の中で十分にこれらのキャリアーの結合が行えるようにホール輸送剤や電子輸送剤などを選択しなければならない。
特に青色リン光材料についてはエネルギーギャップが大きいためにワイドギャップ化されたホール輸送剤や電子輸送剤が必要になってくる。現在これらリン光材料については、電子輸送材料に従来から使用されているAlq3〔トリス(8−ヒドロキシキノリノラト)アルミニウム〕やBAlq2〔ビス(2−メチル−8−ヒドロキシキノリノラト)(4−フェニルフェノキシ)アルミニウム〕等が使用されているが、リン光材料に使用するには十分なエネルギーギャップを持ち合わせていないため新規なワイドギャップな電子輸送材料の開発が必要である。
In particular, since the blue phosphorescent material has a large energy gap, a hole transport agent and an electron transport agent having a wide gap are required. For these phosphorescent materials, Alq 3 [tris (8-hydroxyquinolinolato) aluminum] and BAlq 2 [bis (2-methyl-8-hydroxyquinolinolato) (which are conventionally used for electron transport materials) ( 4-phenylphenoxy) aluminum] and the like are used, but since it does not have a sufficient energy gap for use in phosphorescent materials, it is necessary to develop a new wide-gap electron transport material.
本発明の目的は、新規なジ(ピリジルフェニル)誘導体、それよりなる電子輸送材料およびそれを含む有機エレクトロルミネッセンス素子を提供する点にある。 An object of the present invention is to provide a novel di (pyridylphenyl) derivative, an electron transport material comprising the same, and an organic electroluminescence device including the same.
本発明の第1は、下記一般式(1)
で示されるジ(ピリジルフェニル)誘導体に関する。
本発明の第2は、請求項1記載のジ(ピリジルフェニル)誘導体よりなる電子輸送材料に関する。
本発明の第3は、請求項1記載のジ(ピリジルフェニル)誘導体を含む有機エレクトロルミネッセンス素子に関する。
The first of the present invention is the following general formula (1)
The di (pyridylphenyl) derivative shown by these.
The second of the present invention relates to an electron transport material comprising the di (pyridylphenyl) derivative according to
3rd of this invention is related with the organic electroluminescent element containing the di (pyridylphenyl) derivative of
本発明におけるR1〜R6およびR10〜R13における炭素数1〜6の直鎖または分岐のアルキル基としては、メチル、エチル、プロピル、イソプロピル、n−ブチル、イソブチル、t−ブチル、ヘプチル、イソヘプチル、n−ヘキシル等を挙げることができる。 Examples of the linear or branched alkyl group having 1 to 6 carbon atoms in R 1 to R 6 and R 10 to R 13 in the present invention include methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, t-butyl, heptyl , Isoheptyl, n-hexyl and the like.
本発明におけるR1〜R6およびR10〜R13における炭素数1〜6の直鎖又は分岐のアルコキシ基としては、メトキシ、エトキシ、プロポキシ、イソプロポキシ、n−ブトキシ、t−ブトキシ、ヘプトキシ、イソヘプトキシ、n−ヘキシルオキシなどを挙げることができる。 Examples of the linear or branched alkoxy group having 1 to 6 carbon atoms in R 1 to R 6 and R 10 to R 13 in the present invention include methoxy, ethoxy, propoxy, isopropoxy, n-butoxy, t-butoxy, heptoxy, Examples include isoheptoxy and n-hexyloxy.
本発明におけるR1〜R6およびR10〜R13における炭素数1〜6の直鎖または分岐のモノ−またはジ−アルキル−アミノ基は、−NH2の水素の1部または全部が前記アルキル基で置換されたタイプのものである。 In the present invention, the linear or branched mono- or di-alkyl-amino group having 1 to 6 carbon atoms in R 1 to R 6 and R 10 to R 13 is an alkyl group in which one part or all of hydrogen of —NH 2 is alkyl. It is of the type substituted with a group.
本発明の化合物は、下記の反応により製造することができる。
本発明化合物の具体例を以下に例示する。
Specific examples of the compound of the present invention are illustrated below.
本発明のジ(ピリジルフェニル)誘導体は高い電子輸送性能を有する。従って、電子注入材料及び電子輸送材料として使用することができる。 The di (pyridylphenyl) derivative of the present invention has high electron transport performance. Therefore, it can be used as an electron injection material and an electron transport material.
本発明のジ(ピリジルフェニル)誘導体を有機エレクトロルミネッセンス素子に使用する場合、適当な発光材料(ドーパント)と組み合わせて使用することもできる。 When using the di (pyridylphenyl) derivative of this invention for an organic electroluminescent element, it can also be used in combination with a suitable luminescent material (dopant).
本発明のジ(ピリジルフェニル)誘導体を電子輸送層に用いる場合、本発明の化合物は電子注入材料や電子輸送材料として使用できる。また他の電子輸送材料と組み合わせて使用することもできる。 When the di (pyridylphenyl) derivative of the present invention is used for an electron transport layer, the compound of the present invention can be used as an electron injection material or an electron transport material. It can also be used in combination with other electron transport materials.
次に本発明の有機エレクトロルミネッセンス素子について説明する。本発明の有機エレクトロルミネッセンス素子は、陽極と陰極間に一層もしくは多層の有機化合物を積層した素子であり、該有機化合物層の少なくとも一層が本発明のジ(ピリジルフェニル)誘導体を含有する。有機エレクトロルミネッセンス素子が一層の場合、陽極と陰極間に発光層を設けている。発光層は、発光材料を含有しそれに加えて陽極から注入した正孔もしくは陰極から注入した電子を発光材料まで輸送するのが目的で、正孔注入材料もしくは電子注入材料を含有していても良い。多層型の有機エレクトロルミネッセンス素子の構成例としては、例えばITO/ホール輸送層/発光層/電子輸送層/陰極、ITO/ホール注入層/ホール輸送層/発光層/電子輸送層/陰極、ITO/ホール輸送層/発光層/電子輸送層/電子注入層/陰極、ITO/ホール輸送層/発光層/ホールブロック層/電子輸送層/陰極、ITO/ホール注入層/ホール輸送層/発光層/ホールブロック層/電子輸送層/陰極、ITO/ホール輸送層/発光層/ホールブロック層/電子輸送層/電子注入層/陰極、ITO/ホール注入層/ホール輸送層/発光層/ホールブロック層/電子輸送層/電子注入層/陰極等の多層構成で積層されたものがあげられる。また、必要に応じて陰極上に封止層を有していても良い。 Next, the organic electroluminescence element of the present invention will be described. The organic electroluminescence device of the present invention is a device in which a single layer or a multilayer organic compound is laminated between an anode and a cathode, and at least one layer of the organic compound layer contains the di (pyridylphenyl) derivative of the present invention. When the organic electroluminescence element is a single layer, a light emitting layer is provided between the anode and the cathode. The light emitting layer contains a light emitting material and may contain a hole injecting material or an electron injecting material for the purpose of transporting holes injected from the anode or electrons injected from the cathode to the light emitting material. . Examples of the configuration of the multi-layer organic electroluminescence element include, for example, ITO / hole transport layer / light-emitting layer / electron transport layer / cathode, ITO / hole injection layer / hole transport layer / light-emitting layer / electron transport layer / cathode, ITO / Hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode, ITO / hole transport layer / light emitting layer / hole block layer / electron transport layer / cathode, ITO / hole injection layer / hole transport layer / light emitting layer / hole Block layer / electron transport layer / cathode, ITO / hole transport layer / light emitting layer / hole block layer / electron transport layer / electron injection layer / cathode, ITO / hole injection layer / hole transport layer / light emitting layer / hole block layer / electron Examples thereof include those laminated in a multilayer structure such as a transport layer / electron injection layer / cathode. Moreover, you may have a sealing layer on a cathode as needed.
正孔輸送層、電子輸送層、および発光層のそれぞれの層は、一層構造であっても、多層構造であっても良い。また正孔輸送層、電子輸送層はそれぞれの層で注入機能を受け持つ層(正孔注入層及び電子注入層)と輸送機能を受け持つ層(正孔輸送層および電子輸送層)を別々に設けることもできる。 Each of the hole transport layer, the electron transport layer, and the light emitting layer may have a single layer structure or a multilayer structure. In addition, the hole transport layer and the electron transport layer should be provided separately with a layer responsible for the injection function (hole injection layer and electron injection layer) and a layer responsible for the transport function (hole transport layer and electron transport layer). You can also.
本発明の有機エレクトロルミネッセンス素子は、上記構成例に限らず、種々の構成とすることができる。必要に応じて、正孔輸送層成分と発光層成分、あるいは電子輸送層成分と発光層成分を混合した層を設けても良い。 The organic electroluminescence element of the present invention is not limited to the above configuration example, and can have various configurations. If necessary, a layer in which a hole transport layer component and a light emitting layer component or an electron transport layer component and a light emitting layer component are mixed may be provided.
以下本発明の有機エレクトロルミネッセンス素子の構成要素に関して、陽極/正孔輸送層/発光層/電子輸送層/陰極からなる素子構成を例として取り上げて詳細に説明する。本発明の有機エレクトロルミネッセンス素子は、基板に支持されていることが好ましい。 Hereinafter, the constituent elements of the organic electroluminescence element of the present invention will be described in detail by taking as an example an element structure comprising an anode / hole transport layer / light emitting layer / electron transport layer / cathode. The organic electroluminescence device of the present invention is preferably supported on a substrate.
基板の素材については特に制限はなく、従来の有機エレクトロルミネッセンス素子に慣用されているものであれば良く、例えばガラス、石英ガラス、透明プラスチックなどからなるものを用いることができる。 There is no restriction | limiting in particular about the raw material of a board | substrate, What is necessary is just used for the conventional organic electroluminescent element, For example, what consists of glass, quartz glass, a transparent plastic etc. can be used.
本発明の有機エレクトロルミネッセンス素子の陽極としては、仕事関数の大きな金属単体(4eV以上)、仕事関数の大きな金属同士の合金(4eV以上)または導電性物質およびこれらの混合物を電極材料とすることが好ましい。このような電極材料の具体例としては、金、銀、銅等の金属、ITO(インジウム−スズオキサイド)、酸化スズ(SnO2)、酸化亜鉛(ZnO)などの導電性透明材料、ポリピロール、ポリチオフェン等の導電性高分子材料が挙げられる。陽極はこれらの電極材料を、例えば蒸着、スパッタリング、塗布などの方法により基板上に形成することができる。陽極のシート電気抵抗は数百Ω/cm2以下が好ましい。陽極の膜厚は材料にもよるが、一般に5〜1,000nm程度、好ましくは10〜500nmである。 As an anode of the organic electroluminescence device of the present invention, an electrode material may be a single metal having a high work function (4 eV or more), an alloy of metals having a high work function (4 eV or more), a conductive substance, or a mixture thereof. preferable. Specific examples of such electrode materials include metals such as gold, silver, and copper, conductive transparent materials such as ITO (indium-tin oxide), tin oxide (SnO 2 ), and zinc oxide (ZnO), polypyrrole, and polythiophene. Examples thereof include conductive polymer materials such as For the anode, these electrode materials can be formed on the substrate by a method such as vapor deposition, sputtering, or coating. The sheet electrical resistance of the anode is preferably several hundred Ω / cm 2 or less. The thickness of the anode depends on the material, but is generally about 5 to 1,000 nm, preferably 10 to 500 nm.
陰極としては、仕事関数の小さな金属単体(4eV以下)、仕事関数の小さな金属同士の合金(4eV以下)または導電性物質およびこれらの混合物を電極材料とすることが好ましい。このような電極材料の具体例としては、リチウム、リチウム−インジウム合金、ナトリウム、ナトリウム−カリウム合金、マグネシウム、マグネシウム−銀合金、マグネシウム−インジウム合金、アルミニウム、アルミニウム−リチウム合金、アルミニウム−マグネシウム合金などが挙げられる。陰極はこれらの電極材料を、例えば蒸着、スパッタリングなどの方法により、薄膜を形成させることにより作製することができる。陰極のシート電気抵抗は数百Ω/cm2以下が好ましい。陰極の膜厚は材料にもよるが、一般に5〜1,000nm程度、好ましくは10〜500nmである。本発明の有機エレクトロルミネッセンス素子の発光を効率良く取り出すために、陽極または陰極の少なくとも一方の電極は、透明もしくは半透明であることが好ましい。 As the cathode, an electrode material is preferably a single metal having a small work function (4 eV or less), an alloy of metals having a small work function (4 eV or less), a conductive substance, or a mixture thereof. Specific examples of such electrode materials include lithium, lithium-indium alloy, sodium, sodium-potassium alloy, magnesium, magnesium-silver alloy, magnesium-indium alloy, aluminum, aluminum-lithium alloy, and aluminum-magnesium alloy. Can be mentioned. The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet electrical resistance of the cathode is preferably several hundred Ω / cm 2 or less. The thickness of the cathode depends on the material, but is generally about 5 to 1,000 nm, preferably 10 to 500 nm. In order to efficiently extract light emitted from the organic electroluminescence device of the present invention, at least one of the anode and the cathode is preferably transparent or translucent.
本発明の有機エレクトロルミネッセンス素子の正孔輸送層は、正孔伝達化合物からなるもので、陽極より注入された正孔を発光層に伝達する機能を有している。電界が与えた2つの電極間に正孔伝達化合物が配置されて陽極から正孔が注入された場合、少なくとも10−6cm2/V・秒以上の正孔移動度を有する正孔伝達物質が好ましい。本発明の有機エレクトロルミネッセンス素子の正孔輸送層に使用する正孔伝達物質は、前記の好ましい性質を有するものであれば特に制限はない。従来から光導電材料において正孔の電荷注入輸送材料として慣用されているものや有機エレクトロルミネッセンス素子の正孔輸送層に使用されている公知の材料の中から任意のものを選択して用いることができる。 The hole transport layer of the organic electroluminescence device of the present invention is made of a hole transfer compound and has a function of transferring holes injected from the anode to the light emitting layer. When a hole transport compound is disposed between two electrodes to which an electric field is applied and holes are injected from the anode, a hole transport material having a hole mobility of at least 10 −6 cm 2 / V · second or more is obtained. preferable. The hole transport material used for the hole transport layer of the organic electroluminescence device of the present invention is not particularly limited as long as it has the above-mentioned preferable properties. It is possible to select and use any of the materials conventionally used as hole charge injection / transport materials in photoconductive materials and known materials used for the hole transport layer of organic electroluminescent devices. it can.
前記の正孔伝達物質としては、例えば銅フタロシアニンなどのフタロシアニン誘導体、N,N,N′,N′−テトラフェニル−1,4−フェニレンジアミン、N,N′−ジ(m−トリル)−N,N′−ジフェニル−4,4′−ジアミノビフェニル(TPD)、N,N′−ジ(1−ナフチル)−N,N′−ジフェニル−4,4′−ジアミノビフェニル(α−NPD)、等のトリアリールアミン誘導体、ポリフェニレンジアミン誘導体、ポリチオフェン誘導体、および水溶性のPEDOT−PSS(ポリエチレンジオキサチオフェン−ポリスチレンスルホン酸)が挙げられる。正孔輸送層は、これらの他の正孔伝達化合物一種または二種以上からなる一層で構成されたもので良く、前記の正孔伝達物質とは別の化合物からなる正孔輸送層を積層したものでもよい。
正孔注入材料としては、下記化学式に示すPEDOT−PSS(ポリマー混合物)やDNTPDを挙げることができる。
Examples of the hole injection material include PEDOT-PSS (polymer mixture) and DNTPD represented by the following chemical formula.
本発明の有機エレクトロルミネッセンス素子の発光層の発光物質については特に制限されることはなく、従来の公知の化合物の中から任意のものを選択して用いることができる。 The light emitting material of the light emitting layer of the organic electroluminescence device of the present invention is not particularly limited, and any one of conventionally known compounds can be selected and used.
発光材料としては、ペリレン誘導体、ナフタセン誘導体、キナクリドン誘導体、クマリン誘導体(例えばクマリン1、クマリン540、クマリン545など)、ピラン誘導体(例えばDCM−1、DCM−2、DCJTBなど)、有機金属錯体{トリス(8−ヒドロキシキノリノラト)アルミニウム(Alq3)、トリス(4−メチル−8−ヒドロキシキノリノラト)アルミニウム(Almq3)等の蛍光材料やビス[2−(4,6−ジフルオロフェニル)ピリジネート−N,C2′]イリジウム(III)ピコリネート(FIrpic)、トリス{1−〔4−(トリフルオロメチル)フェニル〕−1H−ピラゾラート,N,C2′}イリジウム(III)(Irtfmppz3)、ビス[2−(4′,6′−ジフルオロフェニル)ピリジナト−N,C2′]テトラキス(1−ピラゾリル)ボレート(Fir6)、トリス(2−フェニルピリジナト)イリジウム(III)[Ir(ppy)3]などのリン光材料}などを挙げることができる。
Examples of the light-emitting material include perylene derivatives, naphthacene derivatives, quinacridone derivatives, coumarin derivatives (eg,
発光層は、ホスト材料とゲスト材料(ドーパント)から形成することもできる[Appl.Phys.Lett.,65 3610(1989)]。特にリン光材料を発光層に使用する場合、ホスト材料の使用が必要でありこの時使用されるホスト材料としては4,4′−ジ(N−カルバゾリル)−1,1′−ビフェニル(CBP)、1,4−ジ(N−カルバゾリル)ベンゼン、2,2′−ジ〔4″−(N−カルバゾリル)フェニル〕−1,1′−ビフェニル(4CzPBP)等があげられる。 The light-emitting layer can also be formed of a host material and a guest material (dopant) [Appl. Phys. Lett. 65 3610 (1989)]. In particular, when a phosphorescent material is used for the light emitting layer, it is necessary to use a host material, and the host material used at this time is 4,4'-di (N-carbazolyl) -1,1'-biphenyl (CBP). 1,2-di (N-carbazolyl) benzene, 2,2′-di [4 ″-(N-carbazolyl) phenyl] -1,1′-biphenyl (4CzPBP) and the like.
ゲスト材料は、ホスト材料に対して、好ましくは0.01〜40重量%であり、より好ましくは0.1〜20重量%である。ゲスト材料としては、従来公知のFIrpic(化4)、Ir(ppy)3(化3)、Fir6(化6)などを挙げることができる。 The guest material is preferably 0.01 to 40% by weight, more preferably 0.1 to 20% by weight, based on the host material. Examples of guest materials include conventionally known FIrpic (Chemical Formula 4), Ir (ppy) 3 (Chemical Formula 3), and Fir6 (Chemical Formula 6).
本発明の有機エレクトロルミネッセンス素子の電子輸送層の材料としては、本発明のジ(ピリジルフェニル)誘導体が好ましい。このものは単独で使用できるが他の電子輸送材料と併用しても構わない。 As a material for the electron transport layer of the organic electroluminescence device of the present invention, the di (pyridylphenyl) derivative of the present invention is preferable. Although this thing can be used independently, you may use together with another electron transport material.
本発明の有機エレクトロルミネッセンス素子は、電子注入性をさらに向上させる目的で、陰極と有機層の間に絶縁体で構成される電子注入層をさらに設けても良い。ここで使用される導電体としては、アルカリ金属ハロゲン化物、アルカリ土類金属ハロゲン化物から選択される少なくとも一つの金属化合物を使用することが好ましい。アルカリ金属ハロゲン化物としては、フッ化リチウム、フッ化ナトリウム、フッ化カリウム、フッ化セシウム、塩化リチウム等が挙げられる。アルカリ土類金属ハロゲン化物としては、フッ化マグネシウム、フッ化カルシウム、フッ化バリウム、フッ化ストロンチウム等が挙げられる。 The organic electroluminescent device of the present invention may further include an electron injection layer composed of an insulator between the cathode and the organic layer for the purpose of further improving the electron injection property. As the conductor used here, it is preferable to use at least one metal compound selected from alkali metal halides and alkaline earth metal halides. Examples of the alkali metal halide include lithium fluoride, sodium fluoride, potassium fluoride, cesium fluoride, and lithium chloride. Examples of the alkaline earth metal halide include magnesium fluoride, calcium fluoride, barium fluoride, and strontium fluoride.
正孔輸送層、発光層の形成方法については特に限定されるものではない。例えば乾式成膜法(例えば真空蒸着法、イオン化蒸着法など)、湿式成膜法〔溶液塗布法(例えば、スピンコート法、キャスト法、インクジェット法など)〕を使用することができる。本発明のジ(ピリジルフェニル)誘導体の電子輸送層の形成方法については、乾式成膜法(例えば真空蒸着法、イオン化蒸着法)が好ましい。また素子の作製については上記の成膜方法を併用しても構わない。 The method for forming the hole transport layer and the light emitting layer is not particularly limited. For example, a dry film forming method (for example, a vacuum deposition method, an ionization vapor deposition method, etc.) or a wet film forming method [a solution coating method (for example, a spin coating method, a casting method, an ink jet method, etc.)] can be used. As a method for forming the electron transport layer of the di (pyridylphenyl) derivative of the present invention, a dry film forming method (for example, a vacuum evaporation method or an ionization evaporation method) is preferable. In addition, the above-described film formation method may be used in combination for manufacturing the element.
真空蒸着法により正孔輸送層、発光層、電子輸送層等の各層を形成する場合、真空蒸着条件は、特に限定されるものではない。通常10−4Pa程度以下の真空下で50〜500℃程度のボート温度(蒸着源温度)、−50〜300℃程度の基板温度で、0.01〜50nm/sec.程度蒸着することが好ましい。正孔輸送層、発光層、電子輸送層の各層を複数の化合物を使用して形成する場合、化合物を入れた各ボートをそれぞれ温度制御しながら共蒸着することが好ましい。 When forming each layer such as a hole transport layer, a light emitting layer, and an electron transport layer by a vacuum deposition method, the vacuum deposition conditions are not particularly limited. Usually, a boat temperature (deposition source temperature) of about 50 to 500 ° C. under a vacuum of about 10 −4 Pa or less, a substrate temperature of about −50 to 300 ° C., and 0.01 to 50 nm / sec. Vapor deposition is preferred. When forming each layer of a positive hole transport layer, a light emitting layer, and an electron carrying layer using a some compound, it is preferable to co-evaporate each boat which put the compound, temperature-controlling each.
正孔輸送層、発光層を溶媒塗布法で形成する場合、各層を構成する成分を溶媒に溶解または分散させて塗布液とする。溶媒としては、炭化水素系溶媒(例えば、ヘプタン、トルエン、キシレン、シクロヘキサン等)、ケトン系溶媒(例えばアセトン、メチルエチルケトン、メチルイソブチルケトン等)、ハロゲン系溶媒(例えばジクロロメタン、クロロホルム、クロロベンゼン、ジクロロベンゼン等)、エステル系溶媒(例えば酢酸エチル、酢酸ブチル等)、アルコール系溶媒(例えばメタノール、エタノール、ブタノール、メチルセロソルブ、エチルセロソルブ等)、エーテル系溶媒(例えばジブチルエーテル、テトラヒドロフラン、1,4−ジオキサン、1,2−ジメトキシエタン等)、非プロトン性溶媒(例えばN,N′−ジメチルアセトアミド、ジメチルスルホキシド等)、水等が挙げられる。溶媒は単独で使用しても良く、複数の溶媒を併用しても良い。 When forming the hole transport layer and the light emitting layer by a solvent coating method, the components constituting each layer are dissolved or dispersed in a solvent to obtain a coating solution. Solvents include hydrocarbon solvents (eg, heptane, toluene, xylene, cyclohexane, etc.), ketone solvents (eg, acetone, methyl ethyl ketone, methyl isobutyl ketone, etc.), halogen solvents (eg, dichloromethane, chloroform, chlorobenzene, dichlorobenzene, etc.) ), Ester solvents (eg, ethyl acetate, butyl acetate, etc.), alcohol solvents (eg, methanol, ethanol, butanol, methyl cellosolve, ethyl cellosolve, etc.), ether solvents (eg, dibutyl ether, tetrahydrofuran, 1,4-dioxane, 1,2-dimethoxyethane and the like), aprotic solvents (for example, N, N'-dimethylacetamide, dimethyl sulfoxide and the like), water and the like. The solvent may be used alone, or a plurality of solvents may be used in combination.
正孔輸送層、発光層、電子輸送層等の各層の膜厚は、特に限定されるものではないが、通常5〜5,000nmになるようにする。 The thickness of each layer such as the hole transport layer, the light emitting layer, and the electron transport layer is not particularly limited, but is usually 5 to 5,000 nm.
本発明の有機エレクトロルミネッセンス素子は、酸素や水分等との接触を遮断する目的で保護層(封止層)を設けたり、不活性物質中に素子を封入して保護することができる。不活性物質としては、パラフィン、シリコンオイル、フルオロカーボン等が挙げられる。保護層に使用する材料としては、フッ素樹脂、エポキシ樹脂、シリコーン樹脂、ポリエステル、ポリカーボネート、光硬化性樹脂等が挙げられる。 The organic electroluminescence device of the present invention can be protected by providing a protective layer (sealing layer) for the purpose of blocking contact with oxygen, moisture, or the like, or by encapsulating the device in an inert substance. Examples of the inert substance include paraffin, silicon oil, and fluorocarbon. Examples of the material used for the protective layer include fluorine resin, epoxy resin, silicone resin, polyester, polycarbonate, and photocurable resin.
本発明の有機エレクトロルミネッセンス素子は、通常直流駆動の素子として使用できる。直流電圧を印加する場合、陽極をプラス、陰極をマイナスの極性として電圧を通常1.5〜20V程度印加すると発光が観測される。また、本発明の有機エレクトロルミネッセンス素子は交流駆動の素子としても使用できる。交流電圧を印加する場合には、陽極がプラス、陰極がマイナスの状態になった時に発光する。本発明の有機エレクトロルミネッセンス素子は、例えば電子写真感光体、フラットパネルディスプレイなどの平面発光体、複写機、プリンター、液晶ディスプレイのバックライト、計器等の光源、各種発光素子、各種表示素子、各種標識、各種センサー、各種アクセサリーなどに使用することができる。 The organic electroluminescence device of the present invention can be used as a normal DC drive device. When a DC voltage is applied, light emission is observed when a voltage of about 1.5 to 20 V is applied with the positive polarity of the anode and the negative polarity of the cathode. Moreover, the organic electroluminescent element of this invention can be used also as an element of an alternating current drive. When an AC voltage is applied, light is emitted when the anode is in a positive state and the cathode is in a negative state. The organic electroluminescent device of the present invention is, for example, a flat light emitter such as an electrophotographic photosensitive member or a flat panel display, a copying machine, a printer, a backlight of a liquid crystal display, a light source such as an instrument, various light emitting devices, various display devices, various signs. It can be used for various sensors and various accessories.
図66〜79に、本発明の有機エレクトロルミネッセンス素子の好ましい例を示す。 66 to 79 show preferred examples of the organic electroluminescence element of the present invention.
図66は、本発明の有機エレクトロルミネッセンス素子の一例を示す断面図である。図66は、基板1上に陽極2、発光層3および陰極4を順次設けた構成のものである。ここで使用する発光素子は、それ自体が正孔輸送性、電子輸送性及び発光性の機能を単一で有している場合や、それぞれの機能を有する化合物を混合して使用する場合に有用である。
FIG. 66 is a cross-sectional view showing an example of the organic electroluminescence element of the present invention. FIG. 66 shows a structure in which an
図67は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図67は、基板1上に、陽極2、正孔輸送層5、発光層3及び陰極4を順次設けた構成のものである。この場合、発光層は電子輸送性の機能を有している場合に有用である。
FIG. 67 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 67 shows a structure in which an
図68は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図68は、基板1上に、陽極2、発光層3、電子輸送層6及び陰極4を順次設けた構成のものである。この場合、発光層は正孔輸送性の機能を有している場合に有用である。
FIG. 68 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 68 shows a structure in which an
図69は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図69は、基板1上に、陽極2、正孔輸送層5、発光層3、電子輸送層6及び陰極4を順次設けた構成のものである。これは、キャリア輸送と発光の機能を分離したものであり、材料選択の自由度が増すために、発光の高効率化や発光色の自由度が増すことになる。
FIG. 69 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 69 shows a structure in which an
図70は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図70は、基板1上に、陽極2、正孔注入層7、正孔輸送層5、発光層3、電子輸送層6及び陰極4を順次設けた構成のものである。この場合、正孔注入層7を設けることにより、陽極2と正孔輸送層5の密着性を高めたり、陽極から正孔の注入を良くし、発光素子の低電圧駆動に効果がある。
FIG. 70 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 70 shows a structure in which an
図71は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図71は、基板1上に、陽極2、正孔輸送層5、発光層3、電子輸送層6、電子注入層8及び陰極4を順次設けた構成のものである。この場合、陰極4から電子の注入を良くし、発光素子の低電圧駆動に効果がある。
FIG. 71 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 71 shows a structure in which an
図72は、本発明の有機エレクトロルミネッセンス素子における他の例を示す断面図である。図72は、基板1上に、陽極2、正孔注入層7、正孔輸送層5、発光層3、電子輸送層6、電子注入層8及び陰極4を順次設けた構成のものである。この場合、陽極2から正孔の注入を良くし、陰極4からは電子の注入を良くし、最も低電圧駆動に効果がある構成である。
FIG. 72 is a cross-sectional view showing another example of the organic electroluminescence element of the present invention. FIG. 72 shows a structure in which an
図73〜79は、素子の中に正孔ブロック層を挿入したものの断面図である。正孔ブロック層は、陽極から注入された正孔、あるいは発光層3で再結合により生成した励起子が、陰極4に抜けることを防止する効果があり、有機エレクトロルミネッセンス素子の発光効率の向上に効果がある。正孔ブロック層9については、発光層3と陰極4の間もしくは発光層3と電子輸送層6の間あるいは発光層3と電子注入層8の間に挿入することができる。より好ましいものは発光層3と電子輸送層6の間である。
73 to 79 are cross-sectional views of a device in which a hole blocking layer is inserted. The hole blocking layer has an effect of preventing holes injected from the anode or excitons generated by recombination in the
図73〜79で、正孔輸送層5、正孔注入層7、電子輸送層6、電子注入層8、発光層3、正孔ブロック層9のそれぞれの層は、一層構造であっても、多層構造であってもよい。
73 to 79, each of the
図66〜79は、あくまで基本的な素子構成であり、本発明の化合物を用いた有機エレクトロルミネッセンス素子の構成は、これに限定されるものではない。 66 to 79 are basic device configurations to the last, and the configuration of the organic electroluminescence device using the compound of the present invention is not limited to this.
前記電子注入層に用いる電子注入材料としては、本出願人の特願2006−292032号にかかる化合物、例えば下記化合物群を例示することができる。
本発明のジ(ピリジルフェニル)誘導体は、Alq3などの従来の電子輸送剤に較べ電子輸送能が非常に大きい。また移動度も大きく素子中でのホールとのキャリアーバランスにも優れている。ハンドギャップは広く青色リン光材料にも適しているので、本発明のジ(ピリジルフェニル)誘導体は、工業的に極めて重要なものである。 The di (pyridylphenyl) derivative of the present invention has a very large electron transporting ability as compared with conventional electron transporting agents such as Alq 3 . In addition, the mobility is large and the carrier balance with the holes in the element is excellent. Since the hand gap is wide and suitable for blue phosphorescent materials, the di (pyridylphenyl) derivative of the present invention is extremely important industrially.
以下に実施例を挙げて本発明を説明するが、本発明はこれにより何ら限定されるものではない。 Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited thereto.
実施例1
(1)3,5−ジ(ピリジン−3−イル)−1−ブロモベンゼン(略号BPyBBr)の合成
(2)3,3″,5,5″−テトラ(ピリジン−3−イル)−1:1′,3′:1″−ターフェニル(略号BmPyBB)の合成
このもののUV吸収スペクトルは図1に示す。
Example 1
(1) Synthesis of 3,5-di (pyridin-3-yl) -1-bromobenzene (abbreviation BPyBBr)
(2) Synthesis of 3,3 ″, 5,5 ″ -tetra (pyridin-3-yl) -1: 1 ′, 3 ′: 1 ″ -terphenyl (abbreviation BmPyBB)
The UV absorption spectrum of this product is shown in FIG.
実施例2
(1)3,5−ジ(ピリジン−4−イル)−1−ブロモベンゼン(略号BpPyBrB、mDPyPBまたはBmPyPB)の合成
(2)3,3″,5,5″−テトラ(ピリジン−4−イル)−1:1′,3′:1″−ターフェニル(略号m−BpPyPB、BpPyPBまたはBmPyPB)の合成
このもののUV吸収スペクトルは図1に示す。
実施例1のBmPyBB、実施例2のm−BpPyPB、実施例5のp−BPyPPyBのTGA、DSCを測定し、熱特性を評価した。また、紫外線可視吸収スペクトル、発光スペクトルおよびイオン化ポテンシャル(AC−3)を測定し、電気化学特性を評価した。紫外線可視吸収スペクトルは図1に、その他の電気化学的特性を下表に示す。
Tg(二次転移温度)については、DSC(Diffirential Scanning Calorimeter 示差熱量計)中にサンプルを加え、溶融させたものを急冷し、2〜3回繰り返すとガラス転移を表すカーブがチャート上に現れるので、そのカーブを接線で結び、その交点の温度をTgとして採用する。
Tm(融点)は、同じくDSCにサンプルを加え、昇温していくと吸熱カーブが現れるのでその極大のところとの温度を読んで、その温度をTmとする。
Td(分解温度)は、DTA(Differential thermal analyzer 示差熱分析装置)にサンプルを加え、加熱していくとサンプルが熱によって分解し、重量が減少しだす。その減少が開始しだしたところの温度を読んで、その温度をTdとする。
エネルギーギャップ(Eg)については、蒸着機で作成した薄膜を紫外−可視吸光度計で薄膜の吸収曲線を測定する。その薄膜の短波長側の立ち上がりの所に接線を引き、求まった交点の波長W(nm)を次の式に代入し目的の値を求める。それによって得た値がEgになる。
Eg=1240÷W
例えば接線を引いて求めた値W(nm)が470nmだったとしたらこの時のEgの値は
Eg=1240÷470=2.63(eV)
と言うことになる。
Ip(イオン化ポテンシャル)は、イオン化ポテンシャル測定装置(例えば理研計器AC−1)を使用して測定し、測定するサンプルがイオン化を開始しだしたところの電圧(eV)の値を読む。
Ea(電子親和力)は、IpからEgを引いた値である。
本明細書における波長に対する強度(intensity a.u.)の測定は、浜松ホトニクス社製ストリークカメラを用いて、クライオスタット中で4.2Kにおいて測定した。
Example 2
(1) Synthesis of 3,5-di (pyridin-4-yl) -1-bromobenzene (abbreviation BpPyBrB, mDPyPB or BmPyPB)
(2) Synthesis of 3,3 ″, 5,5 ″ -tetra (pyridin-4-yl) -1: 1 ′, 3 ′: 1 ″ -terphenyl (abbreviation m-BpPyPB, BpPyPB or BmPyPB)
The UV absorption spectrum of this product is shown in FIG.
TGA and DSC of BmPyBB of Example 1, m-BpPyPB of Example 2, and p-BPyPPyB of Example 5 were measured, and thermal characteristics were evaluated. Moreover, the ultraviolet visible absorption spectrum, the emission spectrum, and the ionization potential (AC-3) were measured, and the electrochemical characteristics were evaluated. The ultraviolet visible absorption spectrum is shown in FIG. 1, and other electrochemical characteristics are shown in the table below.
As for Tg (secondary transition temperature), a sample is added to DSC (Differential Scanning Calorimeter), the melted sample is rapidly cooled, and a curve representing the glass transition appears on the chart when repeated 2-3 times. The curves are connected by tangent lines, and the temperature at the intersection is adopted as Tg.
As for Tm (melting point), an endothermic curve appears when a sample is added to the DSC and the temperature is raised, so the temperature at the maximum is read and the temperature is defined as Tm.
As for Td (decomposition temperature), when a sample is added to DTA (Differential Thermal Analyzer) and heated, the sample is decomposed by heat and the weight starts to decrease. The temperature at which the decrease starts is read and the temperature is defined as Td.
Regarding the energy gap (Eg), an absorption curve of the thin film prepared with a vapor deposition machine is measured with an ultraviolet-visible absorptiometer. A tangent line is drawn at the rising edge of the thin film on the short wavelength side, and the wavelength W (nm) at the obtained intersection is substituted into the following equation to obtain the target value. The value obtained thereby becomes Eg.
Eg = 1240 ÷ W
For example, if the value W (nm) obtained by drawing a tangent is 470 nm, the value of Eg at this time is Eg = 1240 ÷ 470 = 2.63 (eV)
It will be said.
Ip (ionization potential) is measured using an ionization potential measuring apparatus (for example, Riken Keiki AC-1), and the value of the voltage (eV) at which the sample to be measured starts ionization is read.
Ea (electron affinity) is a value obtained by subtracting Eg from Ip.
Intensity au in this specification was measured at 4.2K in a cryostat using a streak camera manufactured by Hamamatsu Photonics.
実施例3
(1)3,5−ジ(4,4,5,5−テトラメチル−1,3,2−ジオキサボロラン−2−イル)トルエン(略号mBDOBT)の合成
Ref.T.Ishimaya,M.Murata,N.Miyaura,J.Org.Chem.,1995,60,7508.
(2)3′−メチル−3,3″,5,5″−テトラ(ピリジン−4−イル)−1:1′,3′:1″−ターフェニル(略号BpPyPMB)の合成
(1) Synthesis of 3,5-di (4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl) toluene (abbreviated mBDOBT)
Ref. T.A. Ishimaya, M .; Murata, N .; Miyaura, J. et al. Org. Chem. 1995, 60, 7508.
(2) Synthesis of 3'-methyl-3,3 ", 5,5" -tetra (pyridin-4-yl) -1: 1 ', 3': 1 "-terphenyl (abbreviation BpPyPMB)
実施例4
3′−メチル−3,3″,5,5″−テトラ(ピリジン−3−イル)−1:1′,3′:1″−ターフェニル(略号BmPyPMB)の合成
実施例3で得られたBpPyPMBおよび実施例4で得られたBmPyPMBの紫外線可視吸収スペクトル、発光スペクトルおよびイオン化ポテンシャル(AC−3)を測定し、電気化学特性を評価した。両者の紫外線可視吸収スペクトルは図2に、その他の電気化学的特性を下表に示す。
Synthesis of 3'-methyl-3,3 ", 5,5" -tetra (pyridin-3-yl) -1: 1 ', 3': 1 "-terphenyl (abbreviation BmPyPMB)
The ultraviolet-visible absorption spectrum, emission spectrum, and ionization potential (AC-3) of BpPyPMB obtained in Example 3 and BmPyPMB obtained in Example 4 were measured, and the electrochemical characteristics were evaluated. The ultraviolet and visible absorption spectra of both are shown in FIG. 2 and other electrochemical characteristics are shown in the table below.
実施例5
(1)4−〔3,5−ジ(4,4,5,5−テトラメチル−1,3,2−ジオキサボロラン−2−イル)フェニル〕ピリジン(略号pPyBBB)の合成
Ref.T.Ishimaya,M.Murata,N.Miyaura,J.Org.Chem.,1995,60,7508.
(2)3′−(ピリジン−4−イル)−3,3″,5,5″−テトラ(ピリジン−3−イル)−1:1′,3′:1″−ターフェニル(略号p−BPyPPyB)の合成
このもののUV吸収スペクトルは図1に示す。
Example 5
(1) Synthesis of 4- [3,5-di (4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl) phenyl] pyridine (abbreviation pPyBBB)
Ref. T.A. Ishimaya, M .; Murata, N .; Miyaura, J. et al. Org. Chem. 1995, 60, 7508.
(2) 3 '-(pyridin-4-yl) -3,3 ", 5,5" -tetra (pyridin-3-yl) -1: 1', 3 ': 1 "-terphenyl (abbreviation p- Synthesis of BPyPPyB)
The UV absorption spectrum of this product is shown in FIG.
実施例6
(1)BPyBBr〔実施例1(1)〕と3−(3,5−ジブロモフェニル)ピリジン(略号DBrPyB)の合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/酢酸エチル=1/2を使用し、ついでクロロホルム/酢酸エチル/メタノール=10/20/1のものを使用)を行った。3−(3,5−ジブロモフェニル)ピリジン(DBrPyB)〕:収量:9.33g、収率:49.7mol%;3,5−ビスピリド−3−イル−ブロモベンゼン(BPyBBr):収量:2.93g、収率:15.7mol%。
(2)3−〔3,5−ジ(4,4,5,5−テトラメチル−1,3,2−ジオキサボロラン−2−イル)フェニル〕ピリジン(略号BDOBPyB)の合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/酢酸エチル=4/1)を行い、白色粉末のBDOBPyBを得た。収率:52.5mol%。
(3)mBPyPPyBの合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/メタノール=20:1)を行い、白色固体のmBPyPPyBを得た。収率:45.7mol%。
Example 6
(1) Synthesis of BPyBBr [Example 1 (1)] and 3- (3,5-dibromophenyl) pyridine (abbreviation DBrPyB)
Purification was performed by column chromatography (developing solvent: chloroform / ethyl acetate = 1/2, then chloroform / ethyl acetate / methanol = 10/20/1). 3- (3,5-dibromophenyl) pyridine (DBrPyB)]: Yield: 9.33 g, Yield: 49.7 mol%; 3,5-bispyrid-3-yl-bromobenzene (BPyBBr): Yield: 2. 93 g, yield: 15.7 mol%.
(2) Synthesis of 3- [3,5-di (4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl) phenyl] pyridine (abbreviation BDOBPyB)
Purification was performed by a column chromatography method (developing solvent: chloroform / ethyl acetate = 4/1) to obtain BDOBPyB as a white powder. Yield: 52.5 mol%.
(3) Synthesis of mBPyPPyB
Purification was performed by a column chromatography method (developing solvent: chloroform / methanol = 20: 1) to obtain a white solid mBPyPPyB. Yield: 45.7 mol%.
実施例7
(1)2,6−ビス−(3,5−ジクロロフェニル)ピリジン(略号BCPPY)の合成
(2)2,6−ビス−〔3,5−ジ−(ピリジン−3−イル)フェニル〕ピリジン(略号26D3PYPPY)の合成
(1) Synthesis of 2,6-bis- (3,5-dichlorophenyl) pyridine (abbreviation BCPPY)
(2) Synthesis of 2,6-bis- [3,5-di- (pyridin-3-yl) phenyl] pyridine (abbreviation 26D3PYPPY)
実施例8
3,5−ビス−〔3,5−ジ−(ピリジン−3−イル)フェニル〕ピリジン(略号35DPyPB)の合成
精製はカラムクロマトグラフィー法(展開溶媒:クロロホルム/メタノール=30/1)を行い、白い粉末を得た。収率:22.1mol%。
構造確認は1H−NMRで行った。
実施例1、5、6、7、8で得られた化合物の電気化学特性を下記表に示す。
Synthesis of 3,5-bis- [3,5-di- (pyridin-3-yl) phenyl] pyridine (abbreviation 35DPyPB)
Purification was performed by column chromatography (developing solvent: chloroform / methanol = 30/1) to obtain a white powder. Yield: 22.1 mol%.
The structure was confirmed by 1 H-NMR.
The electrochemical characteristics of the compounds obtained in Examples 1, 5, 6, 7, and 8 are shown in the following table.
実施例9
(1)2−メチル−4,6−ビス−(3,5−ジクロロフェニル)ピリミジン(略号BCPMPM)の合成
(2)2−メチル−4,6−ビス〔3,5−ジ(ピリジン−3−イル)フェニル〕ピリミジン(略号D3PyPMPM)の合成
(1) Synthesis of 2-methyl-4,6-bis- (3,5-dichlorophenyl) pyrimidine (abbreviation BCPMPM)
(2) Synthesis of 2-methyl-4,6-bis [3,5-di (pyridin-3-yl) phenyl] pyrimidine (abbreviation D3PyPMPM)
実施例10
2−メチル−4,6−ビス〔3,5−ジ(ピリジン−4−イル)フェニル〕ピリミジン(略号D4PyPMPM)の合成
Synthesis of 2-methyl-4,6-bis [3,5-di (pyridin-4-yl) phenyl] pyrimidine (abbreviation D4PyPMPM)
実施例11
(1)3,4−ビス(3,5−ジクロロフェニル)チオフェン〔3,4−Bis−(3,5−dichloro−phenyl)−thiophen〕(略号3,4BDCPT)の合成
(2)3,4−ビス〔3,5−ジ(ピリジン−3−イル)フェニル〕チオフェン(略号3,4BmPyPT)の合成
(1) Synthesis of 3,4-bis (3,5-dichlorophenyl) thiophene [3,4-Bis- (3,5-dichloro-phenyl) -thiophen] (abbreviated 3,4BDCPT)
(2) Synthesis of 3,4-bis [3,5-di (pyridin-3-yl) phenyl] thiophene (abbreviated 3,4BmPyPT)
実施例12
(1)2,5−ビス(3,5−ジクロロフェニル)チオフェン〔2,5−Bis(3,5−dichloro−phenyl)−thiophene〕(略号BDCPT)の合成
(2)2,5−ビス〔3,5−ジ(ピリジン−3−イル)フェニル〕チオフェン(略号2,5BmPyPT)の合成
Ref.T.Ishimaya,M.Murata,N.Miyaura,J.Org.Chem.,1995,60,7508.
Example 12
(1) Synthesis of 2,5-bis (3,5-dichlorophenyl) thiophene [2,5-Bis (3,5-dichloro-phenyl) -thiophene] (abbreviation BDCPT)
(2) Synthesis of 2,5-bis [3,5-di (pyridin-3-yl) phenyl] thiophene (
Ref. T.A. Ishimaya, M .; Murata, N .; Miyaura, J. et al. Org. Chem. 1995, 60, 7508.
実施例12で得られた2,5BmPyPTと実施例14で得られた2,5BpPyPTの紫外線可視吸収スペクトル、発光スペクトルおよびイオン化ポテンシャル(AC−3)を測定し、電気化学特性を評価した。2,5BmPyPTと2,5BpPyPTの紫外線可視吸収スペクトルは図3に、その他の電気化学的特性を下表に示す。
実施例13
(1)2,4−ビス(3,5−ジクロロフェニル)チオフェン〔2,4−Bis(3,5−dichloro−phenyl)−thiophen〕(略号2,4BDCPT)の合成
(2)2,4−ビス〔3,5−ジ(ピリジン−3−イル)フェニル〕チオフェン(略号BmPyPT、2,4BmPyPT)の合成
(1) Synthesis of 2,4-bis (3,5-dichlorophenyl) thiophene [2,4-Bis (3,5-dichloro-phenyl) -thiophen] (
(2) Synthesis of 2,4-bis [3,5-di (pyridin-3-yl) phenyl] thiophene (abbreviations BmPyPT, 2,4BmPyPT)
実施例14
2,5−ビス〔3,5−ジ(ピリジン−4−イル)フェニル〕チオフェン(略号BpPyPT、2,5−BpPyPT)の合成
Synthesis of 2,5-bis [3,5-di (pyridin-4-yl) phenyl] thiophene (abbreviations BpPyPT, 2,5-BpPyPT)
実施例15、比較例1
〈実施例1で得られたBmPyBBを電子輸送層に用いた青色リン光素子の評価〉
下記の構成の有機EL素子を作った。実施例15の有機EL素子のエネルギーダイアグラムは図4に示す。
〔比較例1〕
ITO/TPDPES:10wt%TBPAH(20nm)/3DTAPBP(20nm)/4CzPBP:11wt%FIrpic(30nm)/TAZ(30nm)/LiF(0.5nm)/Al(100nm)
〔実施例15〕
デバイス1:ITO/TPDPES:10wt%TBPAH(20nm)/3DTAPBP(20nm)/4CzPBP:11wt%FIrpic(30nm)/実施例1で得られたBmPyBB(30nm)/LiF(0.5nm)/Al(100nm)
デバイス2:ITO/TPDPES:10wt%TBPAH(200Å)/3DTAPBP(20nm)/4CzPBP:15wt%FIrpic(30nm)/実施例1で得られたBmPyBB(30nm)/LiF(0.5nm)/Al(100nm)
デバイス3:ITO/TPDPES:10wt%TBPAH(20nm)/3DTAPBP(30nm)/4CzPBP:11wt%FIrpic(10nm)/実施例1で得られたBmPyBB(40nm)/LiF(0.5nm)/Al(100nm)
デバイス4:ITO/TPDPES:10wt%TBPAH(20nm)/3DTAPBP(20nm)/4CzPBP:11wt%FIrpic(10nm)/実施例1で得られたBmPyBB(50nm)/LiF(0.5nm)/Al(100nm)
デバイス5:ITO/TPDPES:10wt%TBPAH(20nm)/3DTAPBP(20nm)/4CzPBP:15wt%FIrpic(10nm)/実施例1で得られたBmPyBB(50nm)/LiF(0.5nm)/Al(100nm)
TBPAHはトリス(4−ブロモフェニル)アミニウム ヘキサクロロアンチモネート〔Tris(4−bromophenyl)aminium hexachloroantimonate〕である。
実施例1で得られたBmPyBBは、公知のTAZと比較して高い電子輸送性を示した。膜厚、ドープ濃度を変化させた素子を作製したところ、最大視感効率41.5lm/W@100cd/m2(4CzPBP:11wt%FIrpic、HTL/EML/ETL=20nm/10nm/50nm)を示した。
各素子の
電流密度 −電圧特性は図5に、
輝度 −電圧特性は図6に、
視感効率 −電圧特性は図7に、
電流効率 −電圧特性は図8に、
輝度 −電流密度特性は図9に、
視感効率 −輝度特性は図10に、
ELスペクトルは 図11に、
ELスペクトル拡大図は図12に、
それぞれ示す。
Example 15, Comparative Example 1
<Evaluation of blue phosphorescent element using BmPyBB obtained in Example 1 for electron transport layer>
An organic EL device having the following constitution was produced. The energy diagram of the organic EL device of Example 15 is shown in FIG.
[Comparative Example 1]
ITO / TPDPES: 10 wt% TBPAH (20 nm) / 3DTAPBP (20 nm) / 4CzPBP: 11 wt% FIrpic (30 nm) / TAZ (30 nm) / LiF (0.5 nm) / Al (100 nm)
Example 15
Device 1: ITO / TPDPES: 10 wt% TBPAH (20 nm) / 3DTAPBP (20 nm) / 4CzPBP: 11 wt% FIrpic (30 nm) / BmPyBB (30 nm) / LiF (0.5 nm) / Al (100 nm obtained in Example 1) )
Device 2: ITO / TPDPES: 10 wt% TBPAH (200 cm) / 3DTAPBP (20 nm) / 4CzPBP: 15 wt% FIrpic (30 nm) / BmPyBB (30 nm) / LiF (0.5 nm) / Al (100 nm obtained in Example 1) )
Device 3: ITO / TPDPES: 10 wt% TBPAH (20 nm) / 3DTAPBP (30 nm) / 4CzPBP: 11 wt% FIrpic (10 nm) / BmPyBB (40 nm) / LiF (0.5 nm) / Al (100 nm obtained in Example 1) )
Device 4: ITO / TPDPES: 10 wt% TBPAH (20 nm) / 3DTAPBP (20 nm) / 4 CzPBP: 11 wt% FIrpic (10 nm) / BmPyBB (50 nm) / LiF (0.5 nm) / Al (100 nm obtained in Example 1) )
Device 5: ITO / TPDPES: 10 wt% TBPAH (20 nm) / 3DTAPBP (20 nm) / 4CzPBP: 15 wt% FIrpic (10 nm) / BmPyBB (50 nm) / LiF (0.5 nm) / Al (100 nm obtained in Example 1) )
TBPAH is tris (4-bromophenyl) aminium hexachloroantimonate [Tris (4-bromophenyl) aminium hexachloroantimonate].
BmPyBB obtained in Example 1 showed a higher electron transporting property than known TAZ. When a device with varying film thickness and doping concentration was produced, the maximum luminous efficiency was 41.5 lm / W @ 100 cd / m 2 (4CzPBP: 11 wt% FIrpic, HTL / EML / ETL = 20 nm / 10 nm / 50 nm). It was.
Figure 5 shows the current density vs. voltage characteristics of each element.
The luminance-voltage characteristics are shown in FIG.
The luminous efficiency vs. voltage characteristics are shown in FIG.
The current efficiency vs. voltage characteristics are shown in FIG.
The luminance-current density characteristics are shown in FIG.
The luminous efficiency vs. luminance characteristics are shown in FIG.
The EL spectrum is shown in FIG.
The enlarged EL spectrum is shown in FIG.
Each is shown.
実施例16、比較例2
実施例1で得られたBmPyPBを電子輸送層に用いた緑色リン光素子の評価
BmPyPBについてIr(ppy)3をドーパントとした緑色リン光素子を作成・評価を行った。その結果、BCP/Alq3をホールブロック層・電子輸送層として用いた素子と比較して高い電子輸送性を示した。そこで、膜厚を変化させた素子を作製したところ、最大視感効率94.9lm/W@100cd/m2〔CBP:8wt%Ir(ppy)3、HTL/EML/ETL=20nm/10nm/50nm〕の素子特性を示した。なお、実施例16の有機EL素子のエネルギーダイアグラムは図13に示す。
下記に素子の構成を示す。
〔比較例2〕
デバイス7:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(30nm)/CBP:8wt%Ir(ppy)3(30nm)/BCP(10nm)/Alq3(20nm)/LiF(0.5nm)/Al(100nm)
〔実施例16〕
デバイス8:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(30nm)/CBP:8wt%Ir(ppy)3(30nm)/BmPyPB(30nm)/LiF(0.5nm)/Al(100nm)
デバイス9:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(30nm)/CBP:8wt%Ir(ppy)3(10nm)/BmPyPB(50nm)/LiF(0.5nm)/Al(100nm)
デバイス10:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(20nm)/CBP:8wt%Ir(ppy)3(10nm)/BmPyPB(50nm)/LiF(0.5nm)/Al(100nm)
電流密度 −電圧特性は図14に、
輝度 −電圧特性は図15に、
視感効率 −電圧特性は図16に、
電流効率 −電圧特性は図17に、
輝度 −電流密度特性は図18に、
視感効率 −輝度特性は図19に、
ELスペクトルは 図20に、
ELスペクトル拡大図は図21に、
それぞれ示す。
Example 16, Comparative Example 2
Evaluation of Green Phosphorescent Device Using BmPyPB Obtained in Example 1 for Electron Transport Layer A green phosphorescent device using Ir (ppy) 3 as a dopant was prepared and evaluated for BmPyPB. As a result, the electron transportability was higher than that of the device using BCP / Alq 3 as the hole block layer / electron transport layer. Therefore, when a device with a changed film thickness was manufactured, the maximum luminous efficiency 94.9 lm / W @ 100 cd / m 2 [CBP: 8 wt% Ir (ppy) 3 , HTL / EML / ETL = 20 nm / 10 nm / 50 nm The device characteristics were shown. In addition, the energy diagram of the organic EL element of Example 16 is shown in FIG.
The structure of the element is shown below.
[Comparative Example 2]
Device 7: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (30 nm) / CBP: 8 wt% Ir (ppy) 3 (30 nm) / BCP (10 nm) / Alq 3 (20 nm) / LiF (0.5 nm) / Al (100 nm)
Example 16
Device 8: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (30 nm) / CBP: 8 wt% Ir (ppy) 3 (30 nm) / BmPyPB (30 nm) / LiF (0.5 nm) / Al (100 nm)
Device 9: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (30 nm) / CBP: 8 wt% Ir (ppy) 3 (10 nm) / BmPyPB (50 nm) / LiF (0.5 nm) / Al (100 nm)
Device 10: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (20 nm) / CBP: 8 wt% Ir (ppy) 3 (10 nm) / BmPyPB (50 nm) / LiF (0.5 nm) / Al (100 nm)
The luminance-voltage characteristics are shown in FIG.
The luminous efficiency vs. voltage characteristics are shown in FIG.
The current efficiency vs. voltage characteristics are shown in FIG.
The luminance-current density characteristics are shown in FIG.
Luminous efficiency vs. luminance characteristics are shown in FIG.
The EL spectrum is shown in FIG.
The enlarged EL spectrum is shown in FIG.
Each is shown.
実施例17、実施例18、比較例3
実施例6で得られたmBPyPPyBと実施例8で得られた35DPyPBを用いて下記有機EL素子をつくり、mBPyPPyBと35DPyPBの電子輸送性を評価した。
有機EL素子の構成
比較例3:ITO/α−NPD(50nm)/Alq3(70nm)/LiF(0.5nm)/Al(100nm)
実施例17:ITO/α−NPD(50nm)/Alq3(40nm)/mBPyPPyB(30nm)/LiF(0.5nm)/Al(100nm)
実施例18:ITO/α−NPD(50nm)/Alq3(40nm)/35DPyPB(30nm)/LiF(0.5nm)/Al(100nm)
電流密度 −電圧特性は図22に、
輝度 −電圧特性は図23に、
視感効率 −電圧特性は図24に、
電流効率 −電圧特性は図25に、
視感効率 −輝度特性は図26に、
ELスペクトルは 図27に、
それぞれ示す。
α−NPD/Alq3素子と較べ、mBPyPPyBおよび35DPyPBを用いた実施例17および18の素子の電流注入(<3V)は、若干低い。それはmBPyPPyBおよび35DPyPBのLUMOレベルが高いため、電子注入障壁も高いではないかと考えられる。しかし、高電圧領域にα−NPD/Alq3素子と同等またはその以上の電流密度を有する。これからみてmBPyPPyBおよび35DPyPBは高い電子移動度を有するものと思われる。
Example 17, Example 18, Comparative Example 3
The following organic EL device was prepared using mBPyPPyB obtained in Example 6 and 35DPyPB obtained in Example 8, and the electron transport properties of mBPyPPyB and 35DPyPB were evaluated.
Structural comparison example 3 of organic EL element: ITO / α-NPD (50 nm) / Alq 3 (70 nm) / LiF (0.5 nm) / Al (100 nm)
Example 17: ITO / α-NPD (50 nm) / Alq 3 (40 nm) / mBPyPPyB (30 nm) / LiF (0.5 nm) / Al (100 nm)
Example 18: ITO / α-NPD (50 nm) / Alq 3 (40 nm) / 35 DPyPB (30 nm) / LiF (0.5 nm) / Al (100 nm)
The luminance-voltage characteristics are shown in FIG.
The luminous efficiency vs. voltage characteristics are shown in FIG.
The current efficiency vs. voltage characteristics are shown in FIG.
Luminous efficiency vs. luminance characteristics are shown in FIG.
The EL spectrum is shown in FIG.
Each is shown.
Compared to the α-NPD / Alq 3 device, the current injection (<3 V) of the devices of Examples 17 and 18 using mBPyPPyB and 35DPyPB is slightly lower. It is thought that the electron injection barrier is also high because of the high LUMO levels of mBPyPPyB and 35DPyPB. However, it has a current density equal to or higher than that of the α-NPD / Alq 3 element in the high voltage region. From this, mBPyPPyB and 35DPyPB appear to have high electron mobility.
実施例19、実施例20、比較例4
比較例4:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(30nm)/CBP:8wt%Ir(ppy)3(30nm)/BCP/Alq3(30nm)/LiF(0.5nm)/Al(100nm)
実施例19:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(30nm)/CBP:8wt%Ir(ppy)3(30nm)/実施例1で得られたBmPyPB(30nm)/LiF(0.5nm)/Al(100nm)
実施例20:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(30nm)/CBP:8wt%Ir(ppy)3(30nm)/実施例9で得られたD3PYPMPM(30nm)/LiF(0.5nm)/Al(100nm)
実施例1で得られたBmPyPB、実施例9で得られたD3PYPMPMを電子輸送層に用いて、緑リン光素子を作った(実施例19、実施例20)。
なお、比較のため電子輸送層にBCP/Alq3を用いたものを比較例4とした。
これにより得られた素子の物性を下記表に示す。
電圧−電流特性 は図28に、
電圧−輝度特性 は図29に、
視感効率−輝度特性は図30に、
輝度−電流効率特性は図31に、
それぞれ示す。
また、D3PYPMPMを用いた20mA/cm2時のELスペクトルを図32に示す。
図32のELスペクトルよりD3PYPMPMを用いた素子からはIr(ppy)3のみの発光が得られている。D3PYPMPMのIpは6.75eVと大きいため良好なホールブロック性を示していると考えられる。図28の電圧−電流特性よりD3PYPMPMを用いた素子は2.5Vから電流注入し始めており、BCP/Alq3やBmPyPBを用いた素子よりも電子注入障壁が低いと考えられる。また5Vまでの低電圧領域の電流密度も他の2つの素子を上回っており、良好な電子輸送性を示している。この素子の100cd/m2時の視感効率は87.01m/W、外部量子効率は21.7%と、発光層が30nmの素子としては、これまでにない高効率な結果が得られている。
Example 19, Example 20, Comparative Example 4
Comparative Example 4: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (30 nm) / CBP: 8 wt% Ir (ppy) 3 (30 nm) / BCP / Alq 3 (30 nm) / LiF (0.5 nm) / Al ( 100nm)
Example 19: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (30 nm) / CBP: 8 wt% Ir (ppy) 3 (30 nm) / BmPyPB (30 nm) / LiF (0.5 nm obtained in Example 1) ) / Al (100 nm)
Example 20: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (30 nm) / CBP: 8 wt% Ir (ppy) 3 (30 nm) / D3PYPMPM (30 nm) / LiF (0.5 nm obtained in Example 9) ) / Al (100 nm)
Green phosphorescent devices were prepared using BmPyPB obtained in Example 1 and D3PYPMPM obtained in Example 9 for the electron transport layer (Examples 19 and 20).
For comparison, a comparative example 4 was prepared using BCP / Alq 3 for the electron transport layer.
The physical properties of the device thus obtained are shown in the following table.
The voltage-luminance characteristics are shown in FIG.
The luminous efficiency-luminance characteristics are shown in FIG.
The luminance-current efficiency characteristics are shown in FIG.
Each is shown.
FIG. 32 shows an EL spectrum at 20 mA / cm 2 using D3PYPMPM.
From the EL spectrum of FIG. 32, light emission of only Ir (ppy) 3 is obtained from the element using D3PYPMPM. Since Ip of D3PYPMPM is as large as 6.75 eV, it is considered that a good hole blocking property is exhibited. Voltage of 28 - element using D3PYPMPM than current characteristics have begun to current injection from 2.5V, is considered to be low electron injection barrier than devices using BCP / Alq 3 and BmPyPB. In addition, the current density in the low voltage region up to 5 V is higher than the other two elements, indicating good electron transport properties. This device has a luminous efficiency of 87.01 m / W at 100 cd / m 2 and an external quantum efficiency of 21.7%. As a device with a light emitting layer of 30 nm, an unprecedented high efficiency result has been obtained. Yes.
実施例21、比較例5
実施例5で得られたpBPyPPyBを電子輸送層に用いた青色リン光素子を作成し、この素子(実施例21)の評価を行った。
なお、比較のためpBPyPPyBの代わりにTAZ(比較例1参照)を用いた素子を比較例5とした。
比較例5:ITO/TPDPES:10wt%TBPAH(20nm)/3DTAPBP(20nm)/4CzPBP:11wt%FIrpic(30nm)/TAZ(30nm)/LiF(0.5nm)/Al(100nm)
実施例21:ITO/TPDPES:10wt%TBPAH(20nm)/3DTAPBP(20nm)/4CzPBP:11wt%FIrpic(30nm)/pBPyPPyB(30nm)/LiF(0.5nm)/Al(100nm)
この素子の特性を下記表に示す。
電流密度 −電圧特性 は図34に、
輝度 −電圧特性 は図35に、
視感効率 −電圧特性 は図36に、
電流効率 −電圧特性 は図37に、
輝度 −電流密度特性は図38に、
視感効率 −輝度特性 は図39に、
ELスペクトル は図40に、
ELスペクトル拡大図 は図41に、
それぞれ示す。
Example 21, Comparative Example 5
A blue phosphorescent device using pBPyPPyB obtained in Example 5 as an electron transport layer was prepared, and this device (Example 21) was evaluated.
For comparison, an element using TAZ (see Comparative Example 1) instead of pBPyPPyB is referred to as Comparative Example 5.
Comparative Example 5: ITO / TPDPES: 10 wt% TBPAH (20 nm) / 3DTAPBP (20 nm) / 4CzPBP: 11 wt% FIrpic (30 nm) / TAZ (30 nm) / LiF (0.5 nm) / Al (100 nm)
Example 21: ITO / TPDPES: 10 wt% TBPAH (20 nm) / 3DTAPBP (20 nm) / 4CzPBP: 11 wt% FIrpic (30 nm) / pBPyPPyB (30 nm) / LiF (0.5 nm) / Al (100 nm)
The characteristics of this element are shown in the following table.
The current density vs. voltage characteristics are shown in FIG.
The luminance-voltage characteristics are shown in FIG.
The luminous efficiency vs. voltage characteristics are shown in FIG.
The current efficiency vs. voltage characteristics are shown in FIG.
The luminance-current density characteristics are shown in FIG.
The luminous efficiency vs. luminance characteristics are shown in FIG.
The EL spectrum is shown in FIG.
An enlarged view of the EL spectrum is shown in FIG.
Each is shown.
実施例22(pBPyPPyBを電子輸送層に用いた青色リン光素子)、比較例6
実施例5で得られたpBPyPPyBについてIr(ppy)3をドーパントとした緑色リン光素子(実施例22、デバイス12〜14)を作成・評価を行ったところ、BCP/Alq3(比較例6、デバイス11)と比較して高い素子特性を示した。次いで、発光層を10nmとして高効率化を目指した素子を作製したところ、最大視感効率80.6lm/W@100cd/m2〔CBP:8wt%Ir(ppy)3、HTL/EML/ETL=30nm/10nm/30nm〕の素子特性を示した。
素子の構成
デバイス11:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(30nm)/CBP:8wt%Ir(ppy)3(30nm)/BCP(10nm)/Alq3(20nm)/LiF(0.5nm)/Al(100nm)
デバイス12:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(30nm)/CBP:8wt%Ir(ppy)3(30nm)/pBPyPPyB(30nm)/LiF(0.5nm)/Al(100nm)
デバイス13:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(30nm)/CBP:8wt%Ir(ppy)3(10nm)/pBPyPPyB(30nm)/LiF(0.5nm)/Al(100nm)
デバイス14:ITO/TPDPES:10wt%TBPAH(20nm)/TAPC(30nm)/CBP:8wt%Ir(ppy)3(10nm)/pBPyPPyB(50nm)/LiF(0.5nm)/Al(100nm)
電流密度 −電圧特性 は図43に、
輝度 −電圧特性 は図44に、
視感効率 −電圧特性 は図45に、
電流効率 −電圧特性 は図46に、
輝度 −電流密度特性は図47に、
視感効率 −輝度特性 は図48に、
ELスペクトル は図49に、
ELスペクトル拡大図 は図50に、
それぞれ示す。
Example 22 (blue phosphorescent device using pBPyPPyB for the electron transport layer), Comparative Example 6
When the green phosphorescent element (Example 22, devices 12-14) which made Ir (ppy) 3 a dopant about pBPyPPyB obtained in Example 5 was created and evaluated, BCP / Alq 3 (Comparative Example 6, The device characteristics are higher than those of the device 11). Next, when a device aiming at high efficiency with a light emitting layer of 10 nm was manufactured, maximum luminous efficiency 80.6 lm / W @ 100 cd / m 2 [CBP: 8 wt% Ir (ppy) 3 , HTL / EML / ETL = 30 nm / 10 nm / 30 nm] was shown.
Component device 11: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (30 nm) / CBP: 8 wt% Ir (ppy) 3 (30 nm) / BCP (10 nm) / Alq 3 (20 nm) / LiF (0. 5nm) / Al (100nm)
Device 12: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (30 nm) / CBP: 8 wt% Ir (ppy) 3 (30 nm) / pBPyPPyB (30 nm) / LiF (0.5 nm) / Al (100 nm)
Device 13: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (30 nm) / CBP: 8 wt% Ir (ppy) 3 (10 nm) / pBPyPPyB (30 nm) / LiF (0.5 nm) / Al (100 nm)
Device 14: ITO / TPDPES: 10 wt% TBPAH (20 nm) / TAPC (30 nm) / CBP: 8 wt% Ir (ppy) 3 (10 nm) / pBPyPPyB (50 nm) / LiF (0.5 nm) / Al (100 nm)
The current density vs. voltage characteristics are shown in FIG.
The luminance-voltage characteristics are shown in FIG.
The luminous efficiency vs. voltage characteristics are shown in FIG.
The current efficiency vs. voltage characteristics are shown in FIG.
The luminance-current density characteristics are shown in FIG.
The luminous efficiency vs. luminance characteristics are shown in FIG.
The EL spectrum is shown in FIG.
An enlarged view of the EL spectrum is shown in FIG.
Each is shown.
実施例23、24、25、比較例7
実施例1で得られたBmPyBBと実施例12で得られた2,5BmPyPTと実施例14で得られた2,5BpPyPTをそれぞれ電子輸送材料として用いた素子を用い、その特性を評価した。
素子の構成
比較例7:ITO/α−NPD(50nm)/Alq3(70nm)/LiF(0.5nm)/Al(100nm)
実施例23:ITO/α−NPD(50nm)/Alq3(40nm)/BmPyBB(30nm)/LiF(0.5nm)/Al(100nm)
実施例24:ITO/α−NPD(50nm)/Alq3(40nm)/BmPyPT(30nm)/LiF(0.5nm)/Al(100nm)
実施例25:ITO/α−NPD(50nm)/Alq3(40nm)/BpPyPT(30nm)/LiF(0.5nm)/Al(100nm)
電流密度はBmPyBB>BmPyPT>BpPyPT>Alq3の順となることが示された。特に、メタ置換のBmPyPTは電子注入特性が高いことがわかった。
各有機EL素子の
電流密度 −電圧特性は図51に、
電流密度 −電圧特性(線形:低電圧領域)は図52に、
輝度 −電圧特性は図53に、
視感効率 −電圧特性は図54に、
電流効率 −電圧特性は図55に、
ELスペクトル は図56に、
それぞれ示す。
Examples 23, 24 and 25, Comparative Example 7
A device using BmPyBB obtained in Example 1, 2,5BmPyPT obtained in Example 12, and 2,5BpPyPT obtained in Example 14 as an electron transport material was evaluated.
Device Configuration Comparative Example 7: ITO / α-NPD (50 nm) / Alq 3 (70 nm) / LiF (0.5 nm) / Al (100 nm)
Example 23: ITO / α-NPD (50 nm) / Alq 3 (40 nm) / BmPyBB (30 nm) / LiF (0.5 nm) / Al (100 nm)
Example 24: ITO / α-NPD (50 nm) / Alq 3 (40 nm) / BmPyPT (30 nm) / LiF (0.5 nm) / Al (100 nm)
Example 25: ITO / α-NPD (50 nm) / Alq 3 (40 nm) / BpPyPT (30 nm) / LiF (0.5 nm) / Al (100 nm)
The current density was shown to be a BmPyBB>BmPyPT>BpPyPT> order of Alq 3. In particular, it was found that meta-substituted BmPyPT has high electron injection characteristics.
The current density-voltage characteristics of each organic EL element are shown in FIG.
The current density-voltage characteristics (linear: low voltage region) are shown in FIG.
The luminance-voltage characteristics are shown in FIG.
Luminous efficiency vs. voltage characteristics are shown in FIG.
The current efficiency vs. voltage characteristics are shown in FIG.
The EL spectrum is shown in FIG.
Each is shown.
実施例26〜29
実施例1で得られたBmPyBB(実施例27に相当)
実施例5で得られたpBPyPPyB(実施例29に相当)
実施例6で得られたmBPyPPyB(実施例28に相当)
実施例8で得られた35DPyPB(実施例26に相当)
をそれぞれ電子輸送材料として用いて、緑色リン光素子を得た。
素子の構成
実施例26:ITO/TPDPES(20nm)/TAPC(30nm)/CBP:Ir(ppy)3(8wt%)(30nm)/DPyPB(30nm)/LiF(0.5nm)/Al(100nm)
実施例27:ITO/TPDPES(20nm)/TAPC(30nm)/CBP:Ir(ppy)3(8wt%)(30nm)/BmPyBB(30nm)/LiF(0.5nm)/Al(100nm)
実施例28:ITO/TPDPES(20nm)/TAPC(30nm)/CBP:Ir(ppy)3(8wt%)(30nm)/mBPyPPyB(30nm)/LiF(0.5nm)/Al(100nm)
実施例29:ITO/TPDPES(20nm)/TAPC(20nm)/CBP:Ir(ppy)3(8wt%)(30nm)/pBPyPPyB(30nm)/LiF(0.5nm)/Al(100nm)
これらの素子の物性を下記表に示す。
電流密度 −電圧特性 は図57に、
輝度 −電圧特性 は図58に、
輝度 −電流密度特性は図59に、
外部量子効率−輝度特性 は図60に、
視感効率 −輝度特性 は図61に、
電流効率 −電圧特性 は図62に、
視感効率 −電圧特性 は図63に、
電流効率 −電流密度特 は図64に、
ELスペクトル は図65に、
それぞれ示す。
実施例1で得られたBmPyBBを用いた緑色リン光素子と比べ、実施例8で得られたDPyPBを用いた素子の電流密度は遥かに高いことが確認された。同じ素子構造でこれまで一番高い電流密度ではないかと思われる。しかし、電子が過剰に注入し、逆にキャリアバランスが崩れることがわかった。それでも、DPyPBは電子輸送材料として優れているのではないかと思われる。適当に素子周辺材料を選べば、より高い効率が期待できると思われる。また実施例6で得られたmBPyPPyBを用いた素子は実施例1で得られたBmPyBBまたは実施例5で得られたpBPyPPyBを用いた素子より電子注入は若干低いが、高電圧領域での電流密度はいずれの素子よりも高い。
Examples 26-29
BmPyBB obtained in Example 1 (corresponding to Example 27)
PBPyPPyB obtained in Example 5 (corresponding to Example 29)
MBPyPPyB obtained in Example 6 (corresponding to Example 28)
35DPyPB obtained in Example 8 (corresponding to Example 26)
Were used as electron transport materials to obtain green phosphorescent devices.
Element Configuration Example 26: ITO / TPDPES (20 nm) / TAPC (30 nm) / CBP: Ir (ppy) 3 (8 wt%) (30 nm) / DPyPB (30 nm) / LiF (0.5 nm) / Al (100 nm)
Example 27: ITO / TPDPES (20 nm) / TAPC (30 nm) / CBP: Ir (ppy) 3 (8 wt%) (30 nm) / BmPyBB (30 nm) / LiF (0.5 nm) / Al (100 nm)
Example 28: ITO / TPDPES (20 nm) / TAPC (30 nm) / CBP: Ir (ppy) 3 (8 wt%) (30 nm) / mBPyPPyB (30 nm) / LiF (0.5 nm) / Al (100 nm)
Example 29: ITO / TPDPES (20 nm) / TAPC (20 nm) / CBP: Ir (ppy) 3 (8 wt%) (30 nm) / pBPyPPyB (30 nm) / LiF (0.5 nm) / Al (100 nm)
The physical properties of these elements are shown in the following table.
The luminance-voltage characteristics are shown in FIG.
The luminance-current density characteristics are shown in FIG.
The external quantum efficiency vs. luminance characteristics are shown in FIG.
The luminous efficiency vs. luminance characteristics are shown in FIG.
The current efficiency vs. voltage characteristics are shown in FIG.
The luminous efficiency vs. voltage characteristics are shown in FIG.
Figure 64 shows the current efficiency vs. current density characteristics.
The EL spectrum is shown in FIG.
Each is shown.
It was confirmed that the current density of the device using DPyPB obtained in Example 8 was much higher than that of the green phosphorescent device using BmPyBB obtained in Example 1. It seems to be the highest current density so far with the same element structure. However, it was found that electrons were injected excessively and the carrier balance was lost. Nevertheless, DPyPB seems to be an excellent electron transport material. It is expected that higher efficiency can be expected by appropriately selecting the material around the element. The device using mBPyPPyB obtained in Example 6 has slightly lower electron injection than the device using BmPyBB obtained in Example 1 or pBPyPPyB obtained in Example 5, but the current density in the high voltage region. Is higher than either element.
1 基板
2 陽極(ITO)
3 発光層
4 陰極
5 正孔輸送層(ホール輸送層)
6 電子輸送層
7 正孔注入層(ホール注入層)
8 電子注入層
9 正孔ブロック層(ホールブロック層)
1
3
6
8
Claims (3)
で示されるジ(ピリジルフェニル)誘導体。 The following general formula (1)
A di (pyridylphenyl) derivative represented by:
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