JP2008124355A - Semiconductor device, anisotropic conductive material, mounting structure, electrooptic device, manufacturing method of projection electrode, manufacturing method of anisotropic conductive material, and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, an anisotropic conductive material, a mounting structure and an electrooptic device capable of obtaining high electric reliability by sufficiently deforming a resin without increasing pressurizing force during mounting so much and preventing the breakage of the resin. <P>SOLUTION: The semiconductor device 10 of this invention is characterized in that a void 14S is formed inside a projection body in the semiconductor device provided with a projection electrode P having the projection body 14 composed of the resin and a conductive layer 15 disposed on the projection body. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device, an anisotropic conductive material, a mounting structure, an electro-optical device, a method for manufacturing a protruding electrode, a method for manufacturing an anisotropic conductive material, and an electronic device, and more particularly, a protrusion formed of a resin. The present invention relates to a projecting electrode provided with a body and a structure of an anisotropic conductive material in which conductive particles having at least a core formed of a resin are dispersed.

  In general, in a semiconductor device, an electro-optical device, or the like, a technique of mounting on a substrate or the like using a protruding electrode protruding from the surface is frequently used. For example, a metal bump electrode obtained by applying Au / Ni plating or the like on a seed electrode is often used in semiconductor mounting technology.

  By the way, as a technique for mounting a semiconductor device on a glass substrate of a liquid crystal display panel, a mounting method using an ACF (anisotropic conductive film) has been frequently used. The ACF is obtained by dispersing a large number of conductive particles in an uncured adhesive, and a large number of protruding electrodes arranged at a narrow pitch on a semiconductor device and corresponding to a large number of counter electrodes on a glass substrate. Is used to make a conductive connection at once. In this mounting method using ACF, an ACF is disposed between a semiconductor device and a glass substrate, and the semiconductor device is pressed onto the glass substrate while being heated, whereby each protruding electrode becomes a corresponding counter electrode by softening the ACF. Conductive contact is made through the conductive particles, and then the adhesive is thermally cured to maintain the conductive contact state. As the conductive particles dispersed in the ACF, for example, those obtained by coating a metal or other conductive layer on the surface of a core made of resin, or those made of conductive rubber mixed with fine conductive particles, Are generally used. In this method, the contact pressure and the contact area are secured by elastically deforming rubber and other resins constituting the conductive particles (see, for example, Patent Document 1 below).

On the other hand, as a mounting method different from the above, a protruding electrode having a structure in which a conductive layer is formed on a protrusion made of resin is provided in a semiconductor device, and the top of the protruding electrode abuts against the counter electrode during mounting. There is also known a method in which the state is crushed into a solid and this state is held by an adhesive. In this method, the contact pressure and the contact area are ensured by partially crushing the resin constituting the projecting body (see, for example, Patent Document 2 below).
JP-A-5-182516 JP 2005-101527 A

  By the way, in the mounting method using the above-described ACF and the mounting method using the protruding electrode provided with the protruding body made of resin, the contact pressure and the contact area are secured by deforming the resin. This is particularly effective when a semiconductor device is mounted on a counter electrode formed on a hard substrate, and a stable conductive connection state can be obtained.

  However, since the above contact area cannot be obtained unless the conductive particles and the protruding electrodes are deformed to some extent, it is necessary to apply a pressing force that can sufficiently deform the conductive particles and the protruding electrodes during mounting. If this pressure is excessive, the resin will break, and as a result, contact pressure may not be secured or the conductive layer may be broken, which may cause mounting defects such as increased connection resistance. There is.

  Therefore, the present invention solves the above-mentioned problems, and the problem is that the resin can be sufficiently deformed without increasing the applied pressure at the time of mounting, and at the same time, by preventing the resin from being broken, It is to realize a semiconductor device, an anisotropic conductive material, a mounting structure, and an electro-optical device that can obtain high reliability.

  In view of such circumstances, the semiconductor device of the present invention is a semiconductor device having a protruding electrode including a protruding body made of a resin and a conductive layer disposed on the protruding body, and a cavity is formed inside the protruding body. It is characterized by being. According to this, since the projecting electrode is easily deformed without applying a large pressing force because the cavity is formed inside the projecting body, the contact body is secured and the projecting body is prevented from being broken. Therefore, electrical reliability can be further improved.

  In the present invention, it is preferable that the projecting body is formed by covering the outer side of the single cavity with a projecting outer shell. According to this, a single cavity is provided inside the projecting body, and the outer surface of the cavity is covered with the projecting outer shell, so that the structure is simple, and a stable conductive connection state can be easily obtained. be able to.

  In the present invention, it is preferable that the protrusion has a plurality of the cavities dispersed therein. According to this, since the plurality of cavities are distributed and arranged inside the projecting body, it becomes easier to secure the rigidity of the protruding electrode even when the volume of the cavity is the same, and it is easy to maintain the electrode shape. Therefore, manufacturing is facilitated, and occurrence of mounting defects due to collapse of the electrode shape can be prevented.

  Next, the anisotropic conductive material of the present invention is an anisotropic conductive material in which a large number of conductive particles are dispersed and arranged in an uncured adhesive. It is a particle in which a conductive layer is formed on the outer surface or a particle made of a conductive resin, and a cavity is formed inside the resin. According to this, since the voids are formed inside the resin constituting the conductive particles, the conductive particles are likely to be deformed, so that a sufficient contact area can be obtained without increasing the pressure during mounting. In addition, it is possible to prevent mounting defects due to resin breakage or the like.

  Next, the mounting structure of the present invention includes a first electronic component having a protruding body made of resin and a protruding electrode having a conductive layer disposed on the protruding body, and a counter electrode conductively connected to the protruding electrode. A mounting structure comprising: a second electronic component comprising: a first electronic component; and an adhesive that bonds the first electronic component and the second electronic component, wherein a cavity is formed inside the protruding body, and the top of the protruding electrode Is preferably crushed by the counter electrode.

  Another mounting structure of the present invention includes a first electronic component having a protruding electrode on a surface thereof, a second electronic component having a counter electrode facing the protruding electrode, and between the protruding electrode and the counter electrode. In a mounting structure comprising conductive particles that impart conductivity by interposing them and an adhesive that adheres the first electronic component and the second electronic component, the conductive particles are formed in a granular shape. It is a particle in which a conductive layer is formed on the outer surface of the resin, or a particle made of a conductive resin, and a cavity is formed inside the resin.

  Furthermore, the electro-optical device according to the present invention includes an electronic component having a protruding body made of a resin and a protruding electrode having a conductive layer disposed on the protruding body, and an electric electrode having a counter electrode conductively connected to the protruding electrode. In an electro-optical device including an optical panel and an adhesive that bonds the electronic component and the electro-optical panel, a cavity is formed inside the protruding body.

  Another electro-optical device of the present invention includes an electronic component having a protruding electrode on a surface, an electro-optical panel having a counter electrode facing the protruding electrode, and the protruding electrode and the counter electrode. In the electro-optical device comprising conductive particles that impart conductivity and an adhesive that bonds the electronic component and the electro-optical panel, the conductive particles are conductive on the outer surface of the resin formed in a granular form. It is a particle formed of a layer or a particle made of a conductive resin, and a cavity is formed inside the resin.

  Next, a method for manufacturing a protruding electrode according to the present invention is a method for manufacturing a semiconductor device having a protruding electrode including a protruding body made of a resin and a conductive layer disposed on the protruding body. And a step of forming the projecting body in which a cavity is formed by foaming the resin, and a step of forming a conductive layer on the projecting body.

  The method for producing an anisotropic conductive material according to the present invention is a method for producing an anisotropic conductive material in which a large number of conductive particles are dispersed and arranged in an uncured adhesive. Particles in which a conductive layer is formed on the outer surface of the formed resin, or particles made of a conductive resin. A foaming agent is mixed in the resin, and the resin is foamed to be inside the resin. The method includes a step of forming the conductive particles in which cavities are formed, and a step of dispersing and arranging the conductive particles in the adhesive.

  Next, an electronic apparatus according to the present invention includes the above-described mounting structure. The electro-optical device described above is mounted. Examples of the electronic device include an electronic watch, a mobile phone, a personal computer, a car navigation system, and a television receiver.

[First Embodiment]
Next, embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a partial plan view of the electronic component or semiconductor device 10 of the present embodiment, and FIG. 2 is a partial vertical sectional view of the electronic component or semiconductor device 10. In the present embodiment, a base electrode 12 made of aluminum or the like is formed on the surface of a base body 11 made of a semiconductor substrate such as single crystal silicon, and an opening 13a exposing a part of the base electrode 12 is formed. The insulating layer 13 is formed of silicon oxide, silicon nitride, or the like. A protruding electrode P is formed on the insulating layer 13. The protruding electrode P includes a protruding body 14 and a conductive layer 15 described in detail below.

  On the insulating layer 13, a protrusion 14 made of resin is formed in a region avoiding the base electrode 12 or the opening 13a. The projecting body 14 only needs to have a shape projecting from the surface of the base body 11 and is not limited to a hemispherical shape as illustrated, but a semi-cylindrical shape having an axis along the surface, and an axis perpendicular to the surface. It may be formed in a prismatic shape or a cylindrical shape. The protrusion 14 can be formed of various resins such as an acrylic resin, a phenol resin, a silicone resin, a polyimide resin, a silicone-modified polyimide resin, and an epoxy resin. Furthermore, it is preferable that the surface of the protrusion is roughened in order to improve adhesion with the conductive layer 15 described later.

  The protruding amount of the protruding body 14 is appropriately set depending on the mounting method, the characteristics of the mounting portion, and the like, but is generally in the range of 5 to 1000 μm, and is 5 to 50 μm, particularly about 10 to 20 μm as a semiconductor device. It is preferable that

  In the present embodiment, a cavity 14 </ b> S is formed inside the protrusion 14. In the illustrated example, only a single cavity 14 </ b> S is formed on the protrusion 14, and the protrusion 14 is formed in an outer shell shape that covers the outside of the cavity 14 </ b> S, and this outer shell defines the outer shape of the protrusion 14. It prescribes. In this manner, the protruding electrode P having the cavity 14S inside is heated, for example, in a micro type or the like by foaming beads in which a lower hydrocarbon such as butane or pentane is absorbed as a foaming agent in polystyrene (PS) resin. It can be configured by foam molding.

  The cavity 14S preferably has a normal pressure (1 atm) or an internal pressure close to it (for example, 0.8 to 1.2 atm) at normal temperature (25 ° C.). As a result, a required contact pressure can be ensured after mounting, and the protruding electrode can be prevented from breaking due to fluctuations in internal pressure due to temperature changes. This also applies to the cavity 14T of the second embodiment described later.

  A conductive layer 15 is formed on the projecting body 14, and the conductive layer 15 extends to the opening 13 a and is conductively connected to the base electrode 12. The thickness of the conductive layer 15 is generally in the range of 100 nm to 1 μm, but is particularly preferably in the range of 300 to 800 nm. In the present embodiment, the conductive layer 15 has a stacked structure in which two layers of a base layer 15a and a surface conductive layer 15b are stacked. Here, the underlayer 15a is not limited to a conductive material, but is preferably formed of a conductive material. Examples of the conductive material include TiW, Cu, Cr, Ni, Pd, and Ti. , W, NiV and the like. The base layer 15a is mainly for improving the adhesion with the resin constituting the projecting body, but also functions as a diffusion preventing layer for preventing the diffusion of the metal material (for example, aluminum) constituting the base electrode 12 ( For example, TiW) is more desirable. The thickness of the foundation layer 15a is desirably about 100 to 150 nm.

  The surface conductive layer 15b is made of a conductive material having a suitable function as an electrode surface, such as a low contact resistance with a counter electrode described later. Examples of such a conductive material include Au, Ag, Cu, and Pt. The surface conductive layer 15b is more preferably a material having good corrosion resistance (Au, Pt, etc.) in addition to the above conductive connectivity. The thickness of the surface conductive layer 15b is preferably about 300 to 600 nm.

  Although only one protruding electrode P formed as described above is drawn in the illustrated example, a plurality of protruding electrodes P are usually arranged on the mounting surface of the electronic component (semiconductor device). It is formed. In this case, the plurality of protruding electrodes P may be arranged in a form in which the protruding body 14 and the conductive layer 15 are independently formed. For example, the common protruding body 14 has a shape extending in the arrangement direction, A plurality of conductive layers 15 may be arrayed on the protruding body 14. In this case, a common cavity 14S may be integrally formed inside the common protrusion 14, or a separate cavity 14S may be formed for each protruding electrode P.

  In the case of the present embodiment, the base layer 15a (TiW) is interposed between the base electrode 12 (Al) and the surface conductive layer 15b (Au), and atoms (Al atoms) of the base electrode 12 are surfaced by heat treatment or the like. It also functions as a diffusion preventing film that prevents diffusion into the conductive layer 15b.

  Next, with reference to FIG. 3, the structure of a mounting structure formed by mounting the electronic component or semiconductor device 10 on another electronic component or electro-optical device 20 will be described. In another electronic component or electro-optical device 20, a counter electrode 22 made of aluminum or the like is formed on a substrate 21 made of a hard substrate such as glass, and the surface other than the counter electrode 22 is insulated with silicon oxide or the like. It is covered with a layer 23.

  In the mounting structure described above, the top of the protruding electrode P is crushed in a conductive contact with the counter electrode 21. When the top of the protruding electrode P is crushed by the counter electrode 21, the cavity 14S inside the protruding body 14 is also partially crushed. At this time, since the cavity 14S is provided inside the protruding body 14, the protruding electrode P is deformed more easily than the conventional one, and as a result, a smaller applied pressure (10 to 30 of the applied pressure at the time of conventional mounting). %, For example, a load of about 1 g per protruding electrode P), a sufficient contact area can be secured between the protruding electrode P and the counter electrode 21. In addition, even when the deformation amount of the top portion of the protruding electrode P is ensured, the protrusion 14 is prevented from being broken, so that the occurrence of mounting failure can be avoided and the electrical reliability of the mounting structure can be improved.

  In order to form such a mounting structure, an uncured adhesive (insulating resin) sheet is disposed between the electronic component or semiconductor device 10 and another electronic component or electro-optical device 20, and heated while being pressed. By temporarily softening the adhesive, the protruding electrode P is brought into contact with the counter electrode 21, the top of the protruding electrode P is crushed by the applied pressure, and the adhesive 30 is cured in this state. The electronic component or semiconductor device 10 and another electronic component or electro-optical device 20 are bonded and fixed to each other.

[Second Embodiment]
Next, an electronic component or semiconductor device 10 'according to a second embodiment of the present invention will be described with reference to FIG. The second embodiment is different from the first embodiment only in the structure of the projecting body 14 'and is the same in all other configurations. Therefore, the same parts as those in the first embodiment are denoted by the same reference numerals. These descriptions are omitted.

  In the present embodiment, the projecting body 14 'has the same outer shape as the projecting body 14 of the first embodiment. However, the projecting body 14' is different from the first embodiment in that a plurality of voids 14T are dispersedly arranged therein. Is different. Such a protrusion 14 'can also be formed by foaming and molding a base resin mixed with a foaming agent inside a micro mold or the like.

  In the protrusion 14 'of the present embodiment, since a plurality of cavities 14T smaller than those in the first embodiment are dispersed inside, generally, the volume ratio of the cavities 14T is reduced, but the rigidity is increased and the deformation is increased. Since the portion also occurs uniformly on the entire protrusion 14 ', the collapsed state of the protrusion 14' is stabilized, and the possibility of occurrence of mounting failure due to the collapse of the protrusion 14 'during mounting or the like can be reduced.

[Third Embodiment]
Next, a third embodiment according to the present invention will be described with reference to FIG. In this embodiment, an electronic component or semiconductor device 10 ″ is mounted on another electronic component or electro-optical panel 20 ″ via an anisotropic conductive material 30 ′. Also in this embodiment, the same reference numerals are given to the same parts as those in the first embodiment, and description thereof will be omitted.

  In the electronic component or semiconductor device 10 ″, a base electrode 12 is formed on a substrate 11, and the other surface is covered with an insulating layer 13. The base electrode 12 is composed of an Au / Ni plating layer or the like. A protruding electrode 14 ″ made of a metal bump electrode is provided. On the other hand, in another electronic component or electro-optical panel 20 ″, a counter electrode 22 is formed on a substrate 21 made of a hard substrate such as glass, and the surface other than the counter electrode 22 is covered with an insulating layer 23. ing.

  In the present embodiment, as the anisotropic conductive material 30 ′, a material in which a large number of fine conductive particles 32 are dispersed in an uncured adhesive 31 made of a thermosetting resin (insulating resin) is used. Yes. The anisotropic conductive material 30 ′ may be a sheet-like material called ACF (anisotropic conductive film) or a liquid (slurry) material.

  The conductive particles 32 in the anisotropic conductive material 30 'include a core material 32a made of a resin such as divinylbenzene resin, benzoguanamine resin, acrylic resin, and a conductive layer 32b such as Au covering the surface of the core material 32a. A cavity 32S is provided inside the core member 32a. In the illustrated example, the core member 32a is provided with only a single spherical cavity (bubble) 32S, and the core member 32a is formed of a spherical outer shell surrounding the cavity 32S. However, a plurality of cavities (bubbles) may be dispersedly arranged inside the core member 32a.

  Such a core material 32a can be formed by, for example, heating a bead-shaped resin material mixed with a foaming agent with steam or the like and performing foam molding. Moreover, the conductive layer 32b can be produced | generated by depositing a metal by the electroless-plating method etc. on the surface of the core material 32a formed in this way.

  The cavity 32S preferably has normal pressure (1 atm) or an internal pressure close to it (for example, 0.8 to 1.2 atm) at normal temperature (25 ° C.). As a result, a required contact pressure can be ensured after mounting, and the conductive particles can be prevented from breaking due to variations in internal pressure due to temperature changes. This also applies to a cavity 32S ′ according to a fourth embodiment described later.

  In the present embodiment, the conductive particles 32 are interposed between the protruding electrode 14 ″ and the counter electrode 22, so that they are conductively connected. The conductive particles 32 have a cavity 32S inside. Therefore, the conductive particles 32 can be deformed without increasing the applied pressure during mounting, so that a sufficient contact area can be ensured and the conductive material 32 can be electrically conductive. Breaking of the conductive particles 32 can be avoided.

  In order to manufacture the mounting structure of the present embodiment, the electronic component or semiconductor device 10 ″ is disposed opposite to the other electronic component or electro-optical panel 20 ″ via the anisotropic conductive material 30 ′ and heated while being heated. By pressing, the adhesive 31 is softened so that the protruding electrode 14 ″ contacts the counter electrode 22 through the conductive particles 32, and the adhesive 31 is thermally cured in a state where the conductive particles 32 are elastically deformed. Thus, the conductive connection state is maintained.

[Fourth Embodiment]
Next, a fourth embodiment according to the present invention will be described with reference to FIG. In this embodiment, basically the same electronic component or semiconductor device 10 ″ as in the third embodiment is mounted on another electronic component or electro-optical panel 20 ″, but only the anisotropic conductive material 30 ″ is different. Therefore, the same reference numerals are given to the same parts, and explanations thereof are omitted.

  An anisotropic conductive material 30 ″ of this embodiment is obtained by dispersing a large number of conductive particles 32 ′ in an adhesive 31 similar to that of the third embodiment. The conductive particles 32 ′ are made of a conductive resin. (That is, a resin in which a large number of fine conductive powders are dispersed in a resin.) It is particularly preferable to use a conductive rubber having high elasticity as the conductive resin. A cavity 32S 'is provided inside the particle 32', and is configured to be easily deformed even with a small applied pressure as compared with the case where the cavity 32S 'is not formed.

  In the present embodiment, the same effects as in the third embodiment can be obtained. However, since the conductive particles 32 ′ are made of a conductive resin, the surface of the core material 32 a as in the third embodiment. Therefore, the anisotropic conductive material 30 ″ can be more easily manufactured.

[Configuration of electro-optical device]
Next, an embodiment of the mounting structure and the electro-optical device of the present invention will be described in detail with reference to FIG. FIG. 7 is a schematic perspective view showing an example of an electro-optical device.

  The electro-optical device 100 according to the present embodiment is a liquid crystal device including a liquid crystal display (liquid crystal panel). A transparent substrate 110 and 120 made of glass or the like are bonded together with a sealing material 130, and the substrate 110 and 120 are interposed between them. A liquid crystal is arranged. The sealing material 130 is formed so as to surround the drive region A, and an opening 130 a for injecting liquid crystal is closed by a sealing material 131.

  The substrate 110 is formed on the inner surface of a base material 111 such as glass or plastic, a reflective layer made of a metal or other reflective material such as Al or Ag, a color filter, an insulating film, or a transparent conductive material such as ITO (indium tin oxide). An electrode 116 made of a body, an alignment film made of polyimide resin, or the like is appropriately laminated as necessary.

  On the other hand, the substrate 120 is formed on the inner surface of a base material 121 such as glass or plastic, with a wiring 122 and an element connected thereto (two-terminal nonlinear element such as TFD or three-terminal nonlinear element such as TFT), insulating layer In addition, an electrode made of a transparent conductor, an alignment film made of polyimide resin, or the like is appropriately laminated as necessary.

  A region where the electrode provided on the substrate 110 and the electrode provided on the substrate 120 intersect in a plane constitutes a pixel capable of independently controlling the alignment state of the liquid crystal sandwiched between both electrodes, In the illustrated drive region A, a plurality of pixels are arranged vertically and horizontally.

  The substrate 120 has a substrate overhanging portion 120T that protrudes outward from the outer shape of the substrate 110, and a semiconductor device 135 incorporating a liquid crystal driving circuit or the like is mounted on the substrate overhanging portion 120T. The semiconductor device 135 is conductively connected to the electrode 116 and the wiring 122, and is conductively connected to the wirings 117 and 118 drawn out on the substrate extension 120T. Further, an input terminal 136 that is conductively connected to the semiconductor device 135 is provided at the end of the board extension 120T, and this input terminal 136 is a wiring board (for example, a flexible board) mounted on the end of the board extension 120T. Conductive connection is made to wiring (not shown) formed on a wiring board 137.

  Further, a spacer (not shown) made of an insulating resin or the like is interposed between the substrates 110 and 120, and this spacer regulates the distance between the two substrates. This spacer is preferably formed in a state of being fixed to one of the substrates. Further, a retardation plate and a polarizing plate (not shown) are disposed on the outer surfaces of the substrates 110 and 120 as necessary by a method such as sticking.

  The semiconductor device 135 is provided with the protruding electrode P or 14 ″ formed in the embodiment of the electronic component (semiconductor device), and the protruding electrode P or 14 ″ is formed on the substrate overhanging portion 120T. The wirings 117 and 118 are conductively connected to a counter electrode (connection pad) provided at the tip.

  When the protruding electrode P is formed on the semiconductor device 135, the semiconductor device 135 is heated while being pressed against the substrate overhanging portion 120T via the adhesive 30 made of a thermosetting resin, thereby softening the adhesive 30. Then, the protruding electrode P is pressed against the counter electrode, and the top of the protruding body 13 of the protruding electrode P is deformed. Thereafter, the adhesive 30 is thermally cured, so that the conductive connection state between the protruding electrode P and the counter electrode is maintained.

  Further, when the protruding electrode 14 ″ is formed on the semiconductor device 135, the anisotropic conductive material 30 ′, 30 including the adhesive 31 made of a thermosetting resin and the conductive particles 32, 32 ′ is formed on the semiconductor device 135. ”While pressing the substrate overhanging portion 120T with pressure and pressing the protruding electrode 14 ″ against the counter electrode through the conductive particles 32 and 32 ′ while softening the adhesive 31. Then, the adhesive 31 is thermally cured to maintain the conductive connection state between the protruding electrode 14 ″ and the counter electrode.

[Electronics]
Finally, a configuration example in which the above-described electro-optical device 100 is mounted on an electronic device will be described. FIG. 8 shows a notebook personal computer which is an embodiment of the electronic apparatus according to the present invention. The personal computer 200 includes a main body unit 201 including a plurality of operation buttons 201a and other operation devices 201b, and a display unit 202 connected to the main body unit 201 and including a display screen 202a. In the case of the illustrated example, the main body unit 201 and the display unit 202 are configured to be openable and closable. The above-described electro-optical device (liquid crystal device) 100 is built in the display unit 202, and a desired display image is displayed on the display screen 202a. In this case, a display control circuit for controlling the electro-optical device 100 is provided inside the personal computer 200. The display control circuit is configured to send a predetermined control signal to a drive circuit (liquid crystal driver circuit or the like) provided in the semiconductor device 135 of the electro-optical device 100 to determine the display mode.

  In addition to the electronic device shown in FIG. 8, examples of the electronic device according to the present invention include a liquid crystal television, a car navigation device, a pager, an electronic notebook, a calculator, a workstation, a videophone, and a POS terminal. The electro-optical device according to the present invention can be used as a display unit of these various electronic devices. The semiconductor device, the mounting structure, the electro-optical device, the electronic apparatus, and the electronic component manufacturing method of the present invention are not limited to the above-described illustrated examples, and do not depart from the gist of the present invention. Of course, various changes can be made. For example, in the above embodiment, the semiconductor device provided with the protruding electrode P has been described. However, instead of the semiconductor device, any electronic component other than the semiconductor device may be configured similarly to form a mounting structure. .

FIG. 3 is a schematic partial plan view showing the structure of the protruding electrode according to the first embodiment. FIG. 3 is a schematic partial cross-sectional view showing the structure of the protruding electrode according to the first embodiment. FIG. 3 is a schematic partial longitudinal sectional view showing the mounting structure according to the first embodiment. The schematic fragmentary sectional view which shows the structure of the protruding electrode of 2nd Embodiment. The general | schematic fragmentary longitudinal cross-section which shows the mounting structure of 3rd Embodiment. The general | schematic fragmentary longitudinal cross-section which shows the mounting structure of 4th Embodiment. 1 is a schematic perspective view showing a structure of an electro-optical device. The schematic perspective view which shows the structure of an electronic device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10, 10 "... Electronic component or semiconductor device, 11 ... Board | substrate, 12 ... Base electrode, 13 ... Insulating layer, 14 ... Projection body, 14S, 14T ... Cavity, 15 ... Conductive layer, P ... Projection electrode, 20, 20" ... Other electronic components or electro-optical panels, 21 ... Substrate, 22 ... Counter electrode, 23 ... Insulating layer, 30 ... Adhesive, 30 ', 30 "... Anisotropic conductive material, 31 ... Adhesive, 32, 32' ... Conductive particles, 32S, 32S '... cavities

Claims (12)

  A semiconductor device having a projecting electrode including a projecting body made of resin and a conductive layer disposed on the projecting body, wherein a cavity is formed inside the projecting body.   The semiconductor device according to claim 1, wherein the projecting body is formed by covering an outer side of the single cavity with a projecting outer shell.   The semiconductor device according to claim 1, wherein the protrusion has a plurality of the cavities distributed therein.   In an anisotropic conductive material in which a large number of conductive particles are dispersed and disposed in an uncured adhesive, the conductive particles are particles in which a conductive layer is formed on the outer surface of a resin formed in a granular form, or An anisotropic conductive material, wherein the anisotropic conductive material is a particle made of a conductive resin, and a cavity is formed inside the resin. A first electronic component having a protruding electrode made of a resin and a protruding electrode provided with a conductive layer disposed on the protruding body; a second electronic component having a counter electrode conductively connected to the protruding electrode; In a mounting structure comprising an electronic component and an adhesive that bonds the second electronic component,
A mounting structure comprising a cavity formed in the protrusion. A first electronic component having a protruding electrode on the surface; a second electronic component having a counter electrode opposed to the protruding electrode; and conductive particles that are interposed between the protruding electrode and the counter electrode to provide conductivity. A mounting structure comprising: an adhesive that bonds the first electronic component and the second electronic component;
The conductive particles are particles in which a conductive layer is formed on the outer surface of a resin formed in a granular form, or particles made of a conductive resin, and a cavity is formed inside the resin. Implementation structure to be An electronic component having a protruding body made of resin and a protruding electrode provided with a conductive layer disposed on the protruding body, an electro-optical panel having a counter electrode conductively connected to the protruding electrode, the electronic component and the electric In an electro-optical device comprising an adhesive for bonding an optical panel,
An electro-optical device, wherein a cavity is formed inside the protrusion. An electronic component having a protruding electrode on the surface; an electro-optical panel having a counter electrode opposed to the protruding electrode; conductive particles that are interposed between the protruding electrode and the counter electrode to impart conductivity; and In an electro-optical device comprising: an adhesive that bonds an electronic component and the electro-optical panel;
The conductive particles are particles in which a conductive layer is formed on the outer surface of a resin formed in a granular form, or particles made of a conductive resin, and a cavity is formed inside the resin. An electro-optical device. In a method for manufacturing a semiconductor device having a protruding electrode including a protruding body made of a resin and a conductive layer disposed on the protruding body,
Mixing the foaming agent into the resin, and forming the protrusion with a cavity formed therein by foaming the resin;
Forming a conductive layer on the protruding body;
A method for producing a protruding electrode, comprising: In the method for producing an anisotropic conductive material in which a large number of conductive particles are dispersed and arranged in an uncured adhesive,
The conductive particles are particles in which a conductive layer is formed on the outer surface of a resin formed in a granular form, or particles made of a conductive resin, and a foaming agent is mixed in the resin to foam the resin. Forming the conductive particles in which cavities are formed in the resin,
A step of dispersing and arranging the conductive particles in the adhesive;
The manufacturing method of the anisotropic electrically-conductive material characterized by comprising.   An electronic apparatus comprising the mounting structure according to claim 5.   An electronic apparatus comprising the electro-optical device according to claim 7.

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