JP2008122893A - Inspection equipment and inspection method of liquid crystal display thin film transistor array substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inspection method in which problems associated with product reliability and those associated with manufacturing steps are reflected at an early stage, by detecting an influence of a photo-electric effect on a thin film transistor at an early stage. <P>SOLUTION: The inspection method is applied to an inspection of defects in a liquid crystal display thin film transistor array substrate, and includes: providing inspection equipment which comprises a chamber, a platform, a light emission mechanism, and an electrical characteristics testing mechanism placed in the chamber; placing the liquid crystal display thin film transistor array substrate on the platform; irradiating the liquid crystal display thin film transistor array substrate with light by using the light emission mechanism; and inspecting electrical characteristics of the liquid crystal display thin film transistor array substrate after irradiation with the light emission mechanism by using the electrical characteristics testing mechanism. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an inspection facility and an inspection method thereof, and more particularly to an inspection facility for a liquid crystal display thin film transistor array substrate (LCD TFT array substrate) and an inspection method thereof.

  Currently, liquid crystal display thin film transistor array substrate electrical character inspection equipment cannot know the effect of the photoelectric effect on the thin film transistor after the liquid crystal display thin film transistor array substrate is irradiated with light. It is impossible to detect hidden defects and fine weak points (Soft Weakness) generated by the irradiation of light.

  Therefore, if it is necessary to perform a reliability test after irradiating the thin film transistor with light, first, after performing the liquid crystal (Cell) process on the liquid crystal display thin film transistor array substrate, the panel is divided into panels. In particular, after performing the module process, that is, in the middle and the latter stage of the entire liquid crystal display manufacturing process, the reliability test for irradiating the thin film transistor with the light beam can be performed.

  However, not only can the hidden defects and minute weaknesses caused by the light irradiation of thin film transistors be found in the middle and the latter stages of the entire liquid crystal display manufacturing process, but this not only prolongs the time for product development, but also at the same time This greatly increases the manufacturing cost caused by repairing or discarding.

  Accordingly, an object of the present invention is to provide an inspection facility capable of early detecting the influence of the photoelectric effect on a thin film transistor.

  Another object of the present invention is to provide an inspection method capable of reflecting problems related to product reliability and processes at an early stage.

  The present invention provides inspection equipment, which is applied to inspecting defects in a liquid crystal display thin film transistor array substrate, and is installed in the shamble; the liquid crystal display thin film transistor array substrate A light-emitting mechanism used for irradiating the liquid crystal display thin film transistor array substrate; and the liquid crystal installed in the chamber and subjected to irradiation of the light-emitting mechanism. And an electrical property test mechanism for inspecting electrical properties of the display thin film transistor array substrate.

  In a preferred embodiment of the present invention, a light source of the light emitting mechanism is incident from above the liquid crystal display thin film transistor array substrate.

  In a preferred embodiment of the present invention, the light source of the light emitting mechanism is incident from below the liquid crystal display thin film transistor array substrate.

  In a preferred embodiment of the present invention, the light source of the light emitting mechanism is incident from four sides of the liquid crystal display thin film transistor array substrate.

  In a preferred embodiment of the present invention, an incident angle at which the light source of the light emitting mechanism irradiates the liquid crystal display thin film transistor array substrate is between 0 ° and 180 °.

  In a preferred embodiment of the present invention, the light emitting mechanism comprises a single light source.

  In a preferred embodiment of the present invention, the light emitting mechanism comprises a large number of light sources.

  In a preferred embodiment of the present invention, the electrical property test mechanism is an inductive electrical property test mechanism, an electron beam electrical property test mechanism, or a probe electrical property test mechanism.

  In a preferred embodiment of the present invention, the light emitting mechanism includes a switch to control power on and off of the light emitting mechanism.

  The present invention provides an inspection method, which is applied to inspecting a defect of a liquid crystal display thin film transistor array substrate, and provides an inspection facility, wherein the inspection facility is a shaver, Including a platform disposed in the chamber, a light emitting mechanism and an electrical property test mechanism; placing the liquid crystal display thin film transistor array substrate on the platform; and utilizing the light emitting mechanism, the liquid crystal display thin film transistor array Irradiating the substrate; and using the electrical property test mechanism to inspect electrical properties of the liquid crystal display thin film transistor array substrate that has been irradiated by the light emitting mechanism.

  In a preferred embodiment of the present invention, the inspection method irradiates the liquid crystal display thin film transistor array substrate using the light emitting mechanism, and at the same time uses the electrical characteristic test mechanism to perform the inspection of the liquid crystal display thin film transistor array substrate. The electrical characteristics are inspected.

<Action>
Based on the above, since the inspection equipment to be submitted by the present invention has a light emitting mechanism, the light source of the light emitting mechanism is used to irradiate the liquid crystal display thin film transistor array substrate. A characteristic test can be performed, and at the same time, deterioration due to light irradiation of the thin film transistor can be accelerated, and the influence of the photoelectric effect generated after the light irradiation of the liquid crystal display thin film transistor array substrate on the thin film transistor can be known.

  In addition, the inspection method submitted by the present invention is adapted to irradiate the liquid crystal display thin film transistor array substrate using the light source of the light emitting mechanism when performing an electrical specific test on the liquid crystal display thin film transistor array substrate using the electrical characteristic test mechanism. If the liquid crystal display thin film transistor array substrate is exposed to light, the hidden defects and weak weak points that occur in the thin film transistor can be discovered to reflect the product reliability and process related problems at an early stage. Therefore, product development time can be shortened.

  On the other hand, the inspection method of the present invention is to perform the electrical characteristic test on the liquid crystal display thin film transistor array substrate at the front stage of the entire liquid crystal display manufacturing process, and at the same time, inspect the influence of the photoelectric effect on the thin film transistor. Since the electrical characteristics test of light irradiation is not performed for the first time during the subsequent manufacturing process such as module manufacturing process after cutting into panels in the subsequent liquid crystal manufacturing process, the manufacturing cost generated by repair or disposal is effective. Can be reduced.

The present invention has at least the following advantages.
1. The inspection equipment submitted by the present invention has a light emitting mechanism, and the influence of the photoelectric effect generated on the thin film transistor by the liquid crystal display thin film transistor array substrate after light irradiation can be known by measurement.
2. By using the inspection method submitted by the present invention, hidden defects and weak weak points caused by light irradiation of a thin film transistor can be detected at an early stage during the previous manufacturing process of a liquid crystal display.
3. Since the inspection method submitted by the present invention can reflect problems related to the reliability and process of the product at an early stage, the development time of the product can be shortened.
4). According to the inspection method of the present invention, since the influence of the photoelectric effect on the thin film transistor can be known by inspection before the entire liquid crystal display manufacturing process, the manufacturing cost can be effectively reduced.

The best mode for carrying out the present invention will be described below with reference to the drawings.
FIG. 1 is an explanatory view showing an inspection facility according to an embodiment of the present invention. In FIG. 1, an inspection facility 100 is applied to inspect a liquid crystal display thin film transistor array substrate (LCD TFT array substrate) 102. The inspection facility 100 includes an electrical characteristic test mechanism 104 and a light emission mechanism 106. The inspection facility 100 can be applied to a vacuum atmosphere or a non-vacuum atmosphere depending on different manufacturing process conditions.

  The light emitting mechanism 106 is used to irradiate the liquid crystal display thin film transistor array substrate 102 and accelerates deterioration caused by light irradiation of the thin film transistors (not shown) on the liquid crystal display thin film transistor array substrate 102. The light emitting mechanism 106 includes a switch (not shown) and is used to control on and off of the light source of the light emitting mechanism 106. The light emitting mechanism 106 includes a single light source or multiple light sources, and can select light sources of different shapes / light emitting types or wavelengths based on the light source environment to be simulated and the purpose of use.

  The electrical characteristic test mechanism 104 is used to inspect the electrical characteristics of the liquid crystal display thin film transistor array substrate 102 that has been irradiated by the light emitting mechanism 106, and a defect existing in the liquid crystal display thin film transistor array substrate 102, for example, a short circuit / disconnection. Alternatively, a defect such as a leakage current is discovered. As the electrical property test mechanism 104, for example, any of the electrical property test mechanism such as an inductive electrical property test mechanism, an electron beam electrical property test mechanism, or a probe electrical property test mechanism can be applied to the present invention. It can be decided according to.

  FIG. 2 is an explanatory view showing that the light source of the light emitting mechanism in FIG. 1 is incident from above the liquid crystal display thin film transistor array substrate. FIG. 3 is an explanatory view showing that the light source of the light emitting mechanism in FIG. 1 is incident from below the liquid crystal display thin film transistor array substrate. FIG. 4 is an explanatory view showing that the light source of the light emitting mechanism in FIG. 1 is incident from four directions of the liquid crystal display thin film transistor array substrate. FIG. 5 is an explanatory diagram showing that the light source of the light emitting mechanism in FIG. 1 is incident on the liquid crystal display thin film transistor array substrate with an inclination angle.

  2, 3, 4, and 5, the light source 108 of the light emitting mechanism 106 is incident from above the liquid crystal display thin film transistor array substrate 102 (see FIG. 2) and incident from below (depending on the light source incident direction to be simulated. 3), incident from the four directions (see FIG. 4) or incident on the liquid crystal display thin film transistor array substrate 102 in a manner having an inclination angle, and the incident angle θ at which the light source 108 irradiates the liquid crystal display thin film transistor array substrate 102. Is between 0 ° and 180 ° (see FIG. 5).

  In FIG. 1, a shaver 110 can be provided in the inspection facility 100. The electrical property test mechanism 104 and the light emitting mechanism 106 are installed in the shank 110. In addition, the platform 112 can be installed in the inspection facility 100. For example, the platform 112 is installed in the shaver 110 and used to mount the liquid crystal display thin film transistor array substrate 102.

  Since the inspection facility 100 includes the light emitting mechanism 106, the light source of the light emitting mechanism 106 is used to irradiate the liquid crystal display thin film transistor array substrate 102, and the deterioration of the thin film transistor caused by light irradiation is accelerated. Electrical characteristics can be applied to the thin film transistor array substrate 102, and at the same time, the influence of the photoelectric effect generated by the liquid crystal display thin film transistor array substrate 102 after light irradiation on the thin film transistor can be known through measurement of the electrical characteristic expression. .

  FIG. 6 is a flowchart showing the inspection method according to the embodiment of the present invention. FIG. 7 is a flowchart showing an inspection method according to another embodiment of the present invention.

  First, in FIG. 6, step S202 is performed. Step S202 is to provide an inspection facility, and this inspection facility is applied to the inspection of a liquid crystal display thin film transistor array substrate (LCD TFT array substrate). The inspection facility includes an electrical property test mechanism and a light emission mechanism. Since the structure of the inspection facility has already been described in detail in the above embodiment, it will not be repeated here.

  Next, step S204 is performed. In step S204, the light emitting mechanism is used to irradiate the liquid crystal display thin film transistor array substrate, thereby accelerating deterioration caused by light irradiation of the thin film transistors.

  Then, step S206 is performed. In step S206, the electrical characteristics of the liquid crystal display thin film transistor array substrate is inspected using an electrical characteristic test mechanism. After the liquid crystal display thin film transistor array substrate is irradiated with light, the thin film transistor is subjected to the photoelectric effect. It is a discovery of hidden defects and weak weak points that are generated.

  6 and 7, step S206 in FIG. 6 is performed after step S204. The embodiment of FIG. 6 simulates a situation where the electrical property test mechanism examines the electrical property representation of the liquid crystal display thin film transistor array substrate after the liquid crystal display thin film transistor array substrate has undergone light source irradiation of the light emitting mechanism.

  However, step S204 in FIG. 7 is the same as step S206, and the light emitting mechanism is used to irradiate the liquid crystal display thin film transistor array substrate. Simulate the situation of inspecting electrical property expressions.

  The inspection method of the present invention uses a light emitting mechanism to irradiate a liquid crystal display thin film transistor array substrate with light, finds hidden defects and weak weak points caused by light irradiation of the thin film transistor, and precedes the liquid crystal display manufacturing process. Since the problem related to the reliability and the process of the product can be reflected, the development time of the product can be accelerated.

  In addition, the inspection method of the present invention is for inspecting the influence of the photoelectric effect on the thin film transistor in the first stage of the entire liquid crystal display manufacturing process, and does not perform the electrical property inspection for the first time in the middle or latter stage. It is possible to effectively reduce the manufacturing cost caused by the repair or disposal of the display.

  As described above, the present invention has been disclosed in the best mode. However, the present invention is not intended to limit the present invention and is within the scope of the technical idea of the present invention so that those skilled in the art can easily understand. Since appropriate changes and modifications can be naturally made, the scope of protection of the patent right must be determined on the basis of the scope of claims and an area equivalent thereto.

It is explanatory drawing which shows the inspection equipment concerning embodiment of this invention. It is explanatory drawing which shows that the light source in FIG. 1 injects from the upper direction of a liquid crystal display thin-film transistor array board | substrate. It is explanatory drawing which shows that the light source of the light emission mechanism in FIG. 1 injects from the downward direction of a liquid crystal display thin-film transistor array substrate. It is explanatory drawing which shows that the light source of the light emission mechanism in FIG. 1 injects from four directions of a liquid crystal display thin-film transistor array substrate. It is explanatory drawing which shows that the light source of the light emission mechanism in FIG. 1 injects into a liquid crystal display thin-film transistor array substrate with an inclination | tilt angle. It is a flowchart which shows the inspection method concerning embodiment of this invention. It is a flowchart which shows the inspection method concerning another embodiment of this invention.

Explanation of symbols

100 Inspection equipment 102 Liquid crystal display Thin film transistor array substrate (LCD TFT array substrate)
104 Electrical characteristic test mechanism 106 Light emission mechanism 108 Light source 110 Shamber 112 Platform S202, S204, S206 Each step

Claims (19)

Inspection equipment applied to inspecting defects of liquid crystal display thin film transistor array substrate, which:
With a sambar;
A platform installed in the chamber and used to mount the liquid crystal display thin film transistor array substrate;
A light emitting mechanism installed in the sambar and used to illuminate the liquid crystal display thin film transistor array substrate;
And an electrical property test mechanism used for inspecting electrical properties of the liquid crystal display thin film transistor array substrate that is installed in the chamber and has been irradiated by the light emitting mechanism.   The inspection facility according to claim 1, wherein a light source of the light emitting mechanism is incident from above the liquid crystal display thin film transistor array substrate.   The inspection facility according to claim 1, wherein a light source of the light emitting mechanism is incident from below the liquid crystal display thin film transistor array substrate.   The inspection facility according to claim 1, wherein the light source of the light emitting mechanism is incident from four directions of the liquid crystal display thin film transistor array substrate.   The inspection facility according to claim 1, wherein an incident angle at which the light source of the light emitting mechanism irradiates the liquid crystal display thin film transistor array substrate is between 0 ° and 180 °.   The inspection facility according to claim 1, wherein the light emitting mechanism is composed of a single light source.   The inspection facility according to claim 1, wherein the light emitting mechanism includes a plurality of light sources.   2. The inspection facility according to claim 1, wherein the electrical property test mechanism is an inductive electrical property test mechanism, an electron beam electrical property test mechanism, or a probe electrical property test mechanism.   The inspection facility according to claim 1, wherein the inspection facility further includes a chamber, and the electrical property test mechanism and the light emitting mechanism are installed in the chamber.   The inspection facility according to claim 1, wherein the light emitting mechanism includes a switch to control power on and off of the light emitting mechanism. An inspection method applied to inspecting a defect of a liquid crystal display thin film transistor array substrate, comprising:
Providing an inspection facility, wherein the inspection facility includes a shaver, a platform disposed in the shaver, a light emitting mechanism and an electrical property test mechanism;
Placing the liquid crystal display thin film transistor array substrate on a platform;
Irradiating the liquid crystal display thin film transistor array substrate using the light emitting mechanism;
Inspecting electrical characteristics of the liquid crystal display thin film transistor array substrate that has been irradiated by the light emitting mechanism using the electrical characteristics test mechanism.   The inspection method uses the light emitting mechanism to irradiate the liquid crystal display thin film transistor array substrate, and at the same time, inspects the electrical characteristics of the liquid crystal display thin film transistor array substrate using the electrical characteristic test mechanism. Item 12. The inspection method according to Item 11.   The inspection method according to claim 11, wherein a light source of the light emitting mechanism is incident from above the liquid crystal display thin film transistor array substrate.   The inspection method according to claim 11, wherein a light source of the light emitting mechanism is incident from below the liquid crystal display thin film transistor array substrate.   The inspection method according to claim 11, wherein a light source of the light emitting mechanism is incident from four directions of the liquid crystal display thin film transistor array substrate.   The inspection method according to claim 11, wherein an incident angle at which the light source of the light emitting mechanism irradiates the liquid crystal display thin film transistor array substrate is between 0 ° and 180 °.   The inspection method according to claim 11, wherein the light emitting mechanism includes a single light source.   The inspection method according to claim 11, wherein the light emitting mechanism includes a plurality of light sources.   The inspection method according to claim 11, wherein the electrical property test mechanism is an induction electrical property test mechanism, an electron beam electrical property test mechanism, or a probe electrical property test mechanism.

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