TW200821562A - Apparatus for inspecting TFT array substrate of LCD and method thereof - Google Patents

Apparatus for inspecting TFT array substrate of LCD and method thereof Download PDF

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Publication number
TW200821562A
TW200821562A TW95141896A TW95141896A TW200821562A TW 200821562 A TW200821562 A TW 200821562A TW 95141896 A TW95141896 A TW 95141896A TW 95141896 A TW95141896 A TW 95141896A TW 200821562 A TW200821562 A TW 200821562A
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Taiwan
Prior art keywords
liquid crystal
crystal display
array substrate
film transistor
transistor array
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TW95141896A
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Chinese (zh)
Inventor
Ching-Chih Chen
Chih-Hsiang Chen
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Au Optronics Corp
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Priority to TW95141896A priority Critical patent/TW200821562A/en
Priority to JP2007001965A priority patent/JP2008122893A/en
Publication of TW200821562A publication Critical patent/TW200821562A/en

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Abstract

An inspecting apparatus for inspecting a thin film transistor (TFT) array substrate of a liquid crystal display (LCD) is described. The inspecting apparatus includes a chamber, a platform, a luminescence mechanism and a electrical test mechanism. The platform, the luminescence mechanism and the electrical test mechanism are disposed in the chamber. The platform is used to carry the TFT array substrate of the LCD. The luminescence mechanism is used to illuminate the TFT array substrate of the LCD. The electrical test mechanism is used to test the electrical character of the TFT array substrate of the LCD after illuminated by the luminescence mechanism.

Description

200821562 QDI95031 20848twf.doc/e 九、發明說明: 【發明所屬之技術領域】 曰本發明是有關於-種檢查設備及其檢測方法,且特別 是有關於-種液晶顯示器賴電晶體陣列基板的檢查設備 及其檢測方法。 【先前技術】 Γ: 目月ύ,液晶顯不器薄膜電晶體陣列基板的電性檢查設 備無法得知液晶顯示器薄膜電晶體陣列基板在昭光之 光電效應對薄膜電晶體元件的影響,因此無法量測出薄膜 電晶體7G件由於照光所產生的隱紐缺陣idden Defect) 及微弱缺失(Soft Weakness:)。 ▲因此,如果需要對薄膜電晶體元件進行照光之後的可 罪度測辦’必須先將液晶顯示料膜電晶體陣列基板進 行液晶(Cell)製程,再切割成面板(pand)之後,甚至是在進 行模組(M〇dule)製程之後,也是就在整個液晶顯示器製程 的中後&amp;才會對薄膜電晶體元件進行照光的可靠度測試。 胺雷Ϊ整贿晶顯示11製程財、後前段才發現薄 膜電曰曰體兀件由於照光所產生的隱藏性缺陷及微弱缺失, 除:品的開發時間之外,同時也會大幅增加液晶顯 不益由於重工或作廢所產生的製造成本。 【發明内容】 有鑑於此’本發明的目的就是在提供一種檢查設備, 可以量測出光電效應對_電晶體元件的影變。— 本發明的再-目的是提供一種檢測方法:可提早反映 5 200821562 QDI95031 20848twf.doc/e 出產品信賴度與製程的相關問題。 本發明提出-種檢查設備,適用於檢測液晶顯示器薄 膜電晶體陣列基板之缺陷,包括主腔體及設置於主腔體中 的if、發光機構及電性測試機構。平台用於承載液晶顯 $器薄膜電晶體陣列基板。發光機構用於照射液晶顯示器 薄膜電晶體陣列基板。電性測試機構用於檢測經發光機構 照射之液晶顯示器薄膜電晶體陣列基板的電性。 ( 依照本發明的一較佳實施例所述,在上述之檢查設備 中,發光機構的光源由液晶顯示器薄膜電晶體陣列基板的 上方入射。 依妝本發明的一較佳實施例所述,在上述之檢查設備 中,發光機構的光源由液晶顯示器薄膜電晶體陣列基板的 下方入射。 依照本發明的一較佳實施例所述,在上述之檢查設備 中,發光機構的光源由液晶顯示器薄膜電晶體陣列基板的 四周入射。 ◎ 依照本發明的一較佳實施例所述,在上述之檢查設備 中,發光機構的光源照射液晶顯示器薄膜電晶體陣列基板 的入射角為介於0。到180。之間。 依照本發明的一較佳實施例所述,在上述之檢查設備 中,發光機構由單一光源組成。 依照本發明的一較佳實施例所述,在上述之檢查設備 中,發光機構由多個光源組成。 依知、本發明的一較佳實施例所述,在上述之檢查設備 6 200821562 QDI95031 20848twf.doc/e 中,電性測試機構為感應式電性測試機構、電子束式電性 測試機構或探針式電性測試機構。 依照本發明的一較佳實施例所述,在上述之檢查設備 中,發光機構具有開關,用於控制發光機構之光源的開啟 與關閉。 ^本發明提出一種檢測方法,適用於檢測一液晶顯示器 薄膜電晶體陣列基板,首先提供檢查設備,檢查設備包括 主腔體及設置於主腔體中平台、發光機構及電性測試機 構。之後,將液晶顯示器薄膜電晶體陣列基板置放於平台 上接著,利用發光裝置照射液晶顯示器薄膜電晶體陣列 基板。然後,利用電性測試機構檢測液晶顯示器薄膜電晶 體陣列基板的電性。 依照本發明的一較佳實施例所述,在上述之檢測方法 中,,利用發光機構照射液晶顯示器薄膜電晶體陣列基板 的同日守,利用電性測试機構檢測液晶顯示器薄膜電晶體陣 列基板的電性。 Q 基於上述,在本發明所提出的檢查設備中,由於具有 發光機構,可以利用發光機構的光源對液晶顯示器薄膜電 晶體陣列基板進行照射,因此能在對液晶顯示器薄膜電晶 ,陣列基板進行電性測試的同時,加速薄膜電晶體元件因 恥光而產生的劣化,可得知液晶顯示器薄膜電晶體陣列基 板照光後所產生的光電效應對薄膜電晶體元件的影響。 此外,本發明所提出的檢測方法是在利用電性測試機 構對液晶顯示器薄膜電晶體陣列基板進行電性檢測時,利 用考X光機構對液晶顯示器薄膜電晶體陣列基板進行照光, 7 200821562 QDI95031 20848twf.doc/e 以發現液晶顯示器薄膜電晶體陣列基板在照光之後,薄膜 電晶體元件所產生的隱藏性缺陷及微弱缺失,能提早反映 出產品信賴度與製程相關問題,因此可以縮短產品的開發 時間。 另一方面,本發明的檢測方法是在整個液晶顯示器製 私的岫段,也就是在對液晶顯示器薄膜電晶體陣列基板進 行電性檢測的同時,便檢測光電效應對薄膜電晶體元件的 影響,而非在後續進行液晶製程中、切割成面板之後或是 模組製程等中、後段製程中才進行照光的電性檢測,因此 可以有效地減少重工或作廢所產生的製造成本。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說 明如下。 【實施方式】 圖1所繪示為本發明一實施例之檢查設備的示意圖。 請參照圖1,檢查設備100適用於檢測液晶顯示器薄 (J 膜電晶體陣列基板1〇2之缺陷。檢查設備1〇〇包括電性測 試機構104及發光機構106。檢查設備1〇〇依照不同的製 程條件,可適用於真空環境或是非真空環境。 發光機構106用於照射液晶顯示器薄膜電晶體陣列基 板102,以加速液晶顯示器薄膜電晶體陣列基板1〇2上的 薄膜電晶體元件(未繪示)因照光所產生的劣化。發光機構 106具有開關(未繪示),用於控制發光機構1〇6之光源的開 啟與關閉。發光機構106例如是由單一光源或是多個光源 200821562 QDI95031 20848twf.doc/e 所組成,且依照所要類的光轉境及使用目的,可以選 擇不同形狀、發光麵或紐長的統。 電性測試麟104祕檢驗發光麟刚照射之液 曰曰』示晶體陣列基板1()2的電性,以發現存於 f晶顯示器薄膜電晶體陣列基板102中的缺陷,如短路、、 斷路或是漏電流等缺陷。電性測試機構刚例如是感應式 電性測試麟、電子束㈣性峨麟或探針式電性測試 機構等電性測試機構均可適用於本發明,可視實際製 求來決定。 、 ”圖2所緣示為圖i中之發光機構的光源由液晶顯示器 寿膜兒晶體陣列基板上方射人的示意圖。圖3所緣示為圖 1中之發光機構的光源由液晶顯示器薄膜電晶體陣列基板 下方射入的示意圖。圖4所繪示為圖i中之發光機構的光 源由液晶顯示裔薄膜電晶體陣列基板四周射入的示意圖。 圖f所繪示為圖1中之發光機構的光源以傾斜角射入液晶 顯示器薄膜電晶體陣列基板的示意圖。 、&gt;睛同時參照圖2、圖3、圖4及圖5,發光機構106的 108依照所要模擬的光源射入方向,可以從液晶顯示 ™薄膜電晶體陣列基板1〇2的上方射入(請參照圖2)、下方 射入(請參照圖3)、四周射入(請參照圖4),或是以傾斜角 的方式射入液晶顯示器薄膜電晶體陣列基板1〇2,而光源 1〇8照射液晶顯示器薄膜電晶體陣列基板的入射角0 為介於0。到180。之間(請參照圖5)。 请繼續參照圖1,在檢查設備1〇〇中可具有主腔體 9 200821562 QDI95031 20848twf.doc/e 110。電性測試機構104與發光機構106設置於主腔體11〇 中。此外,在檢查設備100中可設置平台112,例如是設 置於主腔體110中,用於承載液晶顯示器薄膜電晶體陣列 基板102。 由於檢查設備100中,由於具有發光機構106,可利 用發光機構106的光源對液晶顯示器薄膜電晶體陣列基板 102進行如射,以加速溥膜電晶體元件因照光而產生的劣 化,因此能在對液晶顯示器薄膜電晶體陣列基板102進行 電性檢測的同時,可經由測量電性表現得知液晶顯示器薄 膜電μ體陣列基板102在照光後所產生的光電效應對薄膜 電晶體元件的影響。 〜’、 圖6所繪示為本發明一實施例之檢測方法的流程圖。 圖7所繪示為本發明另一實施例之檢測方法的流程圖。 首先,請參照圖6,進行步驟S2〇2,步驟S2〇2為提 供檢查設備,此檢查設備適用於檢測液晶顯示器薄膜電晶200821562 QDI95031 20848twf.doc/e IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an inspection apparatus and a detection method thereof, and in particular to an inspection of a liquid crystal display substrate Equipment and its detection methods. [Prior Art] Γ: 目月ύ, the electrical inspection equipment of the liquid crystal display of the thin film transistor array substrate cannot know the influence of the photoelectric effect of the liquid crystal display thin film transistor array substrate on the thin film transistor element, so it is impossible to measure The idden Defect and the weak Weakness of the 7G film of the thin film transistor due to illumination were measured. ▲ Therefore, if it is necessary to illuminate the thin film transistor component after the irritability test, the liquid crystal display film transistor array substrate must be subjected to a liquid crystal (Cell) process, and then cut into a panel (pand), even after After the module (M〇dule) process, the reliability of the illumination of the thin film transistor component is also tested in the middle and rear of the entire liquid crystal display process. The amine thunder smashed the crystal to show the process of the eleventh, and the latter part of the film discovered that the hidden defect and weak defect of the thin film electric sputum element due to the illumination, in addition to the development time of the product, also greatly increased the liquid crystal display. It does not benefit from the manufacturing costs caused by heavy work or obsolescence. SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide an inspection apparatus that can measure the influence of a photoelectric effect on a transistor element. - A further object of the present invention is to provide a detection method that can be reflected early 5 200821562 QDI95031 20848twf.doc/e Related issues of product reliability and process. The invention provides an inspection apparatus suitable for detecting defects of a liquid crystal display film array substrate, comprising a main cavity and an if, a light-emitting mechanism and an electrical test mechanism disposed in the main cavity. The platform is used to carry a liquid crystal display transistor array substrate. The illuminating mechanism is for illuminating the liquid crystal display thin film transistor array substrate. The electrical test mechanism is used to detect the electrical properties of the liquid crystal display film transistor array substrate illuminated by the illumination mechanism. According to a preferred embodiment of the present invention, in the inspection apparatus described above, the light source of the illumination mechanism is incident from above the liquid crystal display thin film transistor array substrate. According to a preferred embodiment of the present invention, In the above inspection apparatus, the light source of the illuminating mechanism is incident from the lower side of the liquid crystal display film transistor array substrate. According to a preferred embodiment of the present invention, in the above inspection apparatus, the light source of the illuminating mechanism is electrically charged by the liquid crystal display film. According to a preferred embodiment of the present invention, in the above inspection apparatus, the light source illuminates the liquid crystal display film transistor array substrate at an incident angle of 0 to 180. According to a preferred embodiment of the present invention, in the above inspection apparatus, the illuminating mechanism is composed of a single light source. According to a preferred embodiment of the present invention, in the above-mentioned inspection apparatus, the illuminating mechanism Consisting of a plurality of light sources. According to a preferred embodiment of the present invention, in the above inspection apparatus 6 200821562 QDI9503 1 20848 twf.doc/e, the electrical test mechanism is an inductive electrical test mechanism, an electron beam electrical test mechanism or a probe type electrical test mechanism. According to a preferred embodiment of the present invention, In the inspection device, the illuminating mechanism has a switch for controlling the opening and closing of the light source of the illuminating mechanism. The present invention provides a detecting method suitable for detecting a liquid crystal display film transistor array substrate, first providing an inspection device, and the inspection device includes The main cavity and the platform, the illuminating mechanism and the electrical testing mechanism are disposed in the main cavity. Thereafter, the liquid crystal display film transistor array substrate is placed on the platform, and then the liquid crystal display film transistor array substrate is illuminated by the illuminating device. The electrical test mechanism is used to detect the electrical properties of the liquid crystal display film transistor array substrate. According to a preferred embodiment of the present invention, in the above detection method, the liquid crystal display film transistor array substrate is illuminated by the illumination mechanism. On the same day, using an electrical test mechanism to detect the liquid crystal display film transistor array According to the above, in the inspection apparatus proposed by the present invention, since the light-emitting mechanism is provided, the liquid crystal display film transistor array substrate can be irradiated by the light source of the light-emitting mechanism, so that the liquid crystal display film can be electro-crystal When the array substrate is electrically tested, the deterioration of the thin film transistor component due to shame is accelerated, and the influence of the photoelectric effect generated by the liquid crystal display film transistor array substrate on the thin film transistor component can be known. The detection method proposed by the invention is to illuminate the liquid crystal display film transistor array substrate by using an X-ray mechanism when electrically detecting the liquid crystal display film transistor array substrate by using an electrical test mechanism, 7 200821562 QDI95031 20848twf.doc /e In order to find that the hidden defect and weak defect of the thin film transistor component after the liquid crystal display film transistor array substrate is illuminated, the product reliability and process related problems can be reflected early, so that the development time of the product can be shortened. On the other hand, the detection method of the present invention is to detect the influence of the photoelectric effect on the thin film transistor component while the entire liquid crystal display is in a private state, that is, while the liquid crystal display film transistor array substrate is electrically detected. Rather than performing subsequent electrical inspections in the liquid crystal process, after cutting into panels, or in the middle and rear stages of the module process, the manufacturing cost of rework or obsolescence can be effectively reduced. The above and other objects, features and advantages of the present invention will become more <RTIgt; Embodiments FIG. 1 is a schematic diagram of an inspection apparatus according to an embodiment of the present invention. Referring to FIG. 1, the inspection apparatus 100 is suitable for detecting a thin liquid crystal display (defect of the J-film transistor array substrate 1〇2. The inspection apparatus 1 includes an electrical test mechanism 104 and an illumination mechanism 106. The inspection apparatus 1 is different. The process conditions can be applied to a vacuum environment or a non-vacuum environment. The illuminating mechanism 106 is used for illuminating the liquid crystal display film transistor array substrate 102 to accelerate the thin film transistor component on the liquid crystal display film transistor array substrate 1 ( 2 (not drawn The illumination mechanism 106 has a switch (not shown) for controlling the turning on and off of the light source of the illumination mechanism 1〇6. The illumination mechanism 106 is, for example, a single light source or a plurality of light sources 200821562 QDI95031 20848twf.doc/e is composed of, according to the desired type of light transition and the purpose of use, you can choose different shapes, luminous surfaces or new lengths. Electrical test Lin 104 secret test luminous illuminating liquid 曰曰 』 The electrical properties of the crystal array substrate 1 () 2 to find defects in the f crystal display thin film transistor array substrate 102, such as short circuit, open circuit or leakage The electrical test mechanism can be applied to the present invention, for example, an inductive electrical test, an electron beam (four) unicorn or a probe type electrical test mechanism, and can be determined according to actual requirements. Fig. 2 is a schematic view showing the light source of the illuminating mechanism in Fig. i being projected from above the liquid crystal display substrate of the liquid crystal display. Fig. 3 is a view showing that the light source of the illuminating mechanism of Fig. 1 is electrically charged by the liquid crystal display film. FIG. 4 is a schematic diagram showing the light source of the illuminating mechanism of FIG. i being incident from the periphery of the liquid crystal display substrate array substrate. FIG. 15 is a view showing the illuminating mechanism of FIG. The light source is incident on the liquid crystal display film transistor array substrate at an oblique angle. &gt; Eyes Referring to FIG. 2, FIG. 3, FIG. 4 and FIG. 5, the light-emitting mechanism 106 is in accordance with the direction in which the light source is to be simulated. From the top of the liquid crystal display TM thin film transistor array substrate 1〇2 (see Fig. 2), the lower side (see Fig. 3), the surrounding area (see Fig. 4), or the angle of inclination Injection fluid The display film transistor array substrate 1〇2, and the light source 1〇8 illuminates the liquid crystal display film transistor array substrate, the incident angle 0 is between 0 and 180 (refer to FIG. 5). Please continue to refer to FIG. There may be a main cavity 9 200821562 QDI95031 20848twf.doc/e 110 in the inspection device 1 . The electrical test mechanism 104 and the illumination mechanism 106 are disposed in the main cavity 11 . Further, a platform may be provided in the inspection device 100 112, for example, disposed in the main cavity 110 for carrying the liquid crystal display film transistor array substrate 102. Since the inspection device 100 has the illumination mechanism 106, the light source of the illumination mechanism 106 can be used to the liquid crystal display film transistor array. The substrate 102 is irradiated to accelerate the deterioration of the enamel-crystal element due to illumination, so that the liquid crystal display film can be obtained through electrical measurement of the liquid crystal display film transistor array substrate 102. The effect of the photoelectric effect generated by the electro-μ bulk array substrate 102 after illumination on the thin film transistor element. ~', FIG. 6 is a flow chart showing a detection method according to an embodiment of the present invention. FIG. 7 is a flow chart of a detection method according to another embodiment of the present invention. First, referring to FIG. 6, step S2〇2 is performed, and step S2〇2 is for providing an inspection device, and the inspection device is suitable for detecting a liquid crystal display film of the liquid crystal display.

體陣列基板,檢查設備包括電性測試機構及發光機構。S ί/ 查设備的結構已於上文的實施例中詳細說明,於此不再贅 述。 、 、接著,進行步驟S204,步驟S204為利用發光裝置照 射液晶顯不器薄膜電晶體陣列基板,以加速薄膜電晶體元 件因照光而產生的劣化。 、 然後,進行步驟S206,步驟S206為利用電性測試機 f檢測液晶顯示器薄膜電晶體陣列基板的電性,以發現液 晶顯示器薄膜電晶體陣列基板在照光之後,薄膜電晶體元 200821562 QDI95031 20848twf.d〇c/e 件因光電效應所產生的隱難缺陷及微弱缺失。 請同時參照圖6及圖7,圖6的步驟S2〇 :體之6 __示= 电曰曰體陣列基板在經發光機構的光源照射之後,以電性測 =構檢測液晶顯示器薄膜電晶體陣列基板之電性表現的 g然而’在圖7中的步驟S204是與步驟S2〇6同時進行, 是用以模擬在利用發光機構照射液晶顯示器薄膜電晶體陣 列基板的啊’以電㈣彳賴構檢職晶顯示薄膜 體陣列基板之電性表現的情況。 、 …由於本發明的檢測方法是在發光機騎液晶顯示 裔薄膜電晶轉列基板進行照光,以發現薄膜電晶體元件 由於照光所產生的隱藏性缺陷及微弱缺失,能在液晶顯示 器製程的前段就反映出產品信賴度與製㈣相關問題,、因 此可以加快產品的開發時間。 ,此外,本發明的檢測方法是在整個液晶顯示器製程的 前段,便檢測光電效應對薄膜電晶體元件的影響,而非在 中、後段製私中才進行照光的電性檢測,因此可以有效地 降低液晶顯示器因重工或作廢所產生的製造成本。 綜上所述,本發明至少具有下列優點·· 1·本發明所提出的檢查設備具有發光機構,經由量測 可得知液晶顯示器薄膜電晶體陣列基板照光後所產生的光 電效應對薄膜電晶體元件之電性的影響。 2·利用本發明所提出的檢測方法可以在液晶顯示器的 11 200821562 20848twf.doc/e 前段製程中,提早發現薄膜電晶體元件由於照光所產生的 隱藏性缺陷及微弱缺失。 3·由於本發明所提出的檢測方法能提早反映出產品作 賴度與製程的相關問題,因此可以縮短產品的開發時間二 4·本發明的檢測方法是在整個液晶顯示器製程的前段 便經由檢測得知光電效應對薄膜電晶體元件的影響,因^ 可以有效地降低製造成本。 9 雖然本發明已以較佳實施例揭露如上,然其並非用於 限定本發明,任何熟習此技藝者,在不脫離本發明之精神 和範圍内,當可作些許之更動與潤飾,因此本發明之=護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1所繪示為本發明一實施例之檢查設備的示意圖。 —圖2所繪示為圖1中之發光機構的光源由液晶顯示器 薄膜電晶體陣列基板上方射入的示意圖。 —圖3所繪示為圖1中之發光機構的光源由液晶顯示器 〇 薄膜電晶體陣列基板下方射入的示意圖。 —圖4所繪示為圖1中之發光機構的光源由液晶顯示器 薄膜電晶體陣列基板四周射入的示意圖。 圖5所繪示為圖丨中之發光機構的光源以傾斜角射入 液晶顯示器薄膜電晶體陣列基板的示意圖。 圖6所繪示為本發明一實施例之檢測方法的流程圖。 圖7所繪示為本發明另一實施例之檢測方法的流程 圖0 12 200821562 1 20848twf.doc/e 【主要元件符號說明】 100 :檢查設備 102 :液晶顯示器薄膜電晶體陣列基板 104 :電性測試機構 106 :發光機構 108 :光源 110 ··主腔體 112 :平台 S202、S204、S206 :步驟標號 13The body array substrate, the inspection device includes an electrical test mechanism and an illumination mechanism. The structure of the S ί/ checking device has been described in detail in the above embodiments, and will not be described again. Then, step S204 is performed to irradiate the liquid crystal display film array substrate with the light-emitting device to accelerate the deterioration of the thin film transistor element due to illumination. Then, step S206 is performed to detect the electrical properties of the liquid crystal display film transistor array substrate by using the electrical testing machine f to find that the liquid crystal display film transistor array substrate is illuminated, and the thin film transistor element 200821562 QDI95031 20848twf.d 〇c/e parts are hidden defects and weak defects due to photoelectric effect. Please refer to FIG. 6 and FIG. 7 at the same time, step S2 of FIG. 6: body 6__ indicates that the electro-acoustic array substrate is irradiated with the light source of the illuminating mechanism, and then the liquid crystal display film transistor is detected by electrical measurement. The electrical performance of the array substrate is, however, 'step S204 in FIG. 7 is performed simultaneously with step S2〇6, which is used to simulate the use of the illumination mechanism to illuminate the liquid crystal display film transistor array substrate. The inspection of the job crystal shows the electrical performance of the film bulk array substrate. The detection method of the present invention is to illuminate the liquid crystal display substrate on the illuminating machine to find hidden defects and weak defects of the thin film transistor component due to illumination, and can be in the front stage of the liquid crystal display process. It reflects the product reliability and system (4) related issues, so it can speed up product development time. In addition, the detection method of the present invention detects the influence of the photoelectric effect on the thin film transistor element in the front stage of the entire liquid crystal display process, and does not perform the electrical detection of the illumination in the middle and back stage manufacturing, thereby effectively Reduce the manufacturing cost of liquid crystal displays due to heavy work or obsolescence. In summary, the present invention has at least the following advantages: 1. The inspection apparatus proposed by the present invention has an illuminating mechanism, and the photoelectric effect generated by the liquid crystal display film transistor array substrate after illumination is known to the thin film transistor. The electrical influence of the component. 2. Using the detection method proposed by the present invention, hidden defects and weak defects of the thin film transistor element due to illumination can be found early in the process of the liquid crystal display 11 200821562 20848 twf.doc/e. 3. Since the detection method proposed by the present invention can reflect the problems related to product lag and process early, the development time of the product can be shortened. 2. The detection method of the present invention is detected in the front stage of the entire liquid crystal display process. Knowing the influence of the photoelectric effect on the thin film transistor element, the manufacturing cost can be effectively reduced. Although the present invention has been described above by way of a preferred embodiment, it is not intended to limit the invention, and it is to be understood that those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention = the scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of an inspection apparatus according to an embodiment of the present invention. - Figure 2 is a schematic illustration of the light source of the illumination mechanism of Figure 1 being incident from above the liquid crystal display thin film transistor array substrate. - Figure 3 is a schematic view showing the light source of the illuminating mechanism of Figure 1 being incident from below the liquid crystal display 薄膜 thin film transistor array substrate. - Figure 4 is a schematic view showing the light source of the illuminating mechanism of Figure 1 being incident from the periphery of the liquid crystal display thin film transistor array substrate. Fig. 5 is a schematic view showing that the light source of the light-emitting mechanism in the figure is incident on the liquid crystal display film transistor array substrate at an oblique angle. FIG. 6 is a flow chart of a detection method according to an embodiment of the present invention. 7 is a flow chart of a detection method according to another embodiment of the present invention. 0 12 200821562 1 20848twf.doc/e [Description of main component symbols] 100: inspection device 102: liquid crystal display film transistor array substrate 104: electrical Test mechanism 106: illumination mechanism 108: light source 110 · main cavity 112: platform S202, S204, S206: step number 13

Claims (1)

200821562 QDI95031 20848twf.doc/e 十、申請專利範園: 1·一種檢查設備,適用於檢測一液晶顯示器薄膜電晶 體陣列基板之一缺陷,包括: 一主腔體; 一平台,設置於該主腔體中,用於承载該液晶顯示器 薄膜電晶體陣列基板; 一 一發光機構,設置於該主腔體中,用於照射該液晶顯 示器薄膜電晶體陣列基板;以及 一電性測試機構,設置於該主腔體中,用於檢測經該 發光機構照射之該液晶顯示器薄膜電晶體陣基板 性。 2·如申請專利範圍第丨項所述之檢查設備,其中該發 光機構的絲㈣液响示器薄膜電晶體陣列基板的上^ 入射。 、,3.如申請專職圍帛1項所述之檢查設備,其中該發 光機構的絲㈣液晶知器賴電晶體陣列基板的下方 入射。 4.如申請專郷_ 1項所述之檢纽備,其中該發 光機構的光源由該液晶_示器薄膜電晶體陣列基板的四周 入射。 5·如申研專利範圍第i項所述之檢查設備,其中該發 光機構的光源照射該液晶顯示器薄膜電晶體陣列基板的入 射角為介於0°到180°之間。 6·如申請專利範圍第1項所述之檢查設備 ,其中該發 光機構由單一光源組成。 200821562 QDI95031 20848twf.doc/e 性測試機構為感應式電性测試機構 7·如申請專利範圍第i 光機構由多個光源組成。 8·如申請專利範圍第1 構或探針式電性測試機構。 項所述之檢查設備’其中該考么 項所述之檢查設備,其中該電 武機構、電子束式電性測試機 9·如申請專利範圍第i項所述之檢查設備,更包括一 ^腔體,而該電性賴機構與該發光機構設置於該主腔體 * 10·如申請專利範圍第i項所述之檢查設備,其中該發 光機構具有一開關 關閉。200821562 QDI95031 20848twf.doc/e X. Application for Patent Park: 1. An inspection device suitable for detecting a defect of a liquid crystal display film transistor array substrate, comprising: a main cavity; a platform disposed in the main cavity In the body, for carrying the liquid crystal display film transistor array substrate; an illuminating mechanism disposed in the main cavity for illuminating the liquid crystal display film transistor array substrate; and an electrical testing mechanism disposed on the body The main cavity is configured to detect the substrate property of the liquid crystal display film of the liquid crystal display irradiated by the illuminating mechanism. 2. The inspection apparatus according to claim 2, wherein the filament (4) of the light-emitting mechanism is incident on the substrate of the transistor array substrate. 3. The inspection apparatus according to item 1 of the full-time cofferdam, wherein the filament (4) of the light-emitting mechanism is incident under the crystal array substrate. 4. The invention of claim 1, wherein the light source of the light-emitting mechanism is incident from the periphery of the liquid crystal display substrate. 5. The inspection apparatus of claim i, wherein the light source of the light-emitting mechanism illuminates the liquid crystal display film transistor array substrate at an incident angle of between 0° and 180°. 6. The inspection apparatus of claim 1, wherein the light-emitting mechanism is composed of a single light source. 200821562 QDI95031 20848twf.doc/e The sex testing mechanism is an inductive electrical testing mechanism. 7. The patented range ith optical mechanism consists of multiple light sources. 8. If you apply for a patent range or a probe type electrical test facility. The inspection apparatus described in the item, wherein the inspection apparatus described in the test item, wherein the electric power unit and the electron beam type electrical test machine are as described in claim i, further includes a ^ a cavity, and the electrical illuminating mechanism and the illuminating mechanism are disposed in the main cavity. The inspection device according to the item i of claim 1, wherein the illuminating mechanism has a switch closed. 關閉。shut down. •提供一檢查設備,該檢查設備包括一主腔體及設置於 該主腔體中之一平台、一發光機構及一電性測試機構;; 將該液晶顯示器薄膜電晶體陣列基板置放於該平台 利用該發光裝置照射該液晶顯示器薄膜電晶體陣列基 板;以及 土 利用該電性測試機構檢測經該發光機構照射之該液晶 顯示器薄膜電晶體陣列基板的電性。 12·如申請專利範圍第11項所述之檢測方法,其中在 利用該發光機構照射該液晶顯示器薄膜電晶體陣列基板的 同日寸,利用該電性測試機構檢測該液晶顯示器薄膜電晶體 陣列基板的電性。 15 200821562 20848twf.doc/e 13·如申凊專利範圍第u項所述之檢測方法,其令該 發光機構的光源由該液晶顯示器薄膜電晶體陣列基板的上 方入射。 14. 如申請專利顧第u項所述之檢測方法,其中該 發光機構的光源由該液晶顯示器_電晶_列基板的下 方入射。 15. 如申請專利範圍第11項所述之檢測方法,豆中該 發光機構的絲由該液晶顯示器薄膜電晶體_基板的四 周入射。 16. 如申請專利範目第11項所述之檢測方法,其中該 發光機構的光源崎對觀晶齡料膜電晶料列基板 的入射角為介於〇。到180。之間。 17·如申請專利範圍S 11項所述之檢測方法,立中詨 發光機構由單一光源組成。 &quot; i.J 18·如申請專利範圍第u項所述之檢測方法,豆 發光機構由多個光源組成。 ’、μ 19·如申請專利範圍第η項所述之檢測方法,豆 試機構為感應式電性測試機構、電子束式電性測^ 機構或探針式電性測試機構。 16Providing an inspection device comprising a main cavity and a platform disposed in the main cavity, an illumination mechanism and an electrical test mechanism; and placing the liquid crystal display film transistor array substrate on the substrate The illuminating device uses the illuminating device to illuminate the liquid crystal display film transistor array substrate; and the soil uses the electrical testing mechanism to detect the electrical properties of the liquid crystal display film transistor array substrate irradiated by the illuminating mechanism. The method of claim 11, wherein the illuminating mechanism is used to illuminate the liquid crystal display film transistor array substrate, and the electrical test device is used to detect the liquid crystal display film transistor array substrate. Electrical. The method of detecting the invention of claim 5, wherein the light source of the light-emitting means is incident from above the liquid crystal display film transistor array substrate. 14. The detecting method according to claim 5, wherein the light source of the light emitting mechanism is incident from a lower side of the liquid crystal display_electro-crystal column substrate. 15. The detecting method according to claim 11, wherein the filament of the illuminating mechanism in the bean is incident from the liquid crystal display film transistor to the substrate for four weeks. 16. The method according to claim 11, wherein the incident angle of the light source of the light-emitting mechanism is between 〇. To 180. between. 17. The detection method of the patent application scope S11, the Lizhong illuminating mechanism is composed of a single light source. &quot; i.J 18· As described in the scope of claim u, the bean light-emitting mechanism is composed of a plurality of light sources. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; 16
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397878B (en) * 2008-05-16 2013-06-01 Au Optronics Suzhou Corp Ltd Testing apparatus and method thereof
CN103345882A (en) * 2013-06-24 2013-10-09 句容骏成电子有限公司 COB product twisting and detecting pneumatic integrated device
TWI593977B (en) * 2014-01-03 2017-08-01 施耐普特拉克股份有限公司 Display apparatus including dummy display element for tft testing

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* Cited by examiner, † Cited by third party
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JPH0980410A (en) * 1995-09-07 1997-03-28 Tokyo Electron Ltd Inspection device for liquid crystal display substrate
JP3107039B2 (en) * 1998-03-20 2000-11-06 日本電気株式会社 Surface light source prober device and inspection method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397878B (en) * 2008-05-16 2013-06-01 Au Optronics Suzhou Corp Ltd Testing apparatus and method thereof
CN103345882A (en) * 2013-06-24 2013-10-09 句容骏成电子有限公司 COB product twisting and detecting pneumatic integrated device
CN103345882B (en) * 2013-06-24 2015-02-04 句容骏成电子有限公司 COB product twisting and detecting pneumatic integrated device
TWI593977B (en) * 2014-01-03 2017-08-01 施耐普特拉克股份有限公司 Display apparatus including dummy display element for tft testing

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