JP2008108970A - Wiring substrate for luminous element, and luminous apparatus - Google Patents

Wiring substrate for luminous element, and luminous apparatus Download PDF

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JP2008108970A
JP2008108970A JP2006291551A JP2006291551A JP2008108970A JP 2008108970 A JP2008108970 A JP 2008108970A JP 2006291551 A JP2006291551 A JP 2006291551A JP 2006291551 A JP2006291551 A JP 2006291551A JP 2008108970 A JP2008108970 A JP 2008108970A
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metal
wiring
emitting element
conductor
light emitting
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Masanori Kamimura
正憲 神村
Tomohide Hasegawa
智英 長谷川
Yasuhiro Sasaki
康博 佐々木
Minako Izumi
美奈子 泉
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring substrate for luminous elements which has an excellent heat radiating property and can be manufactured inexpensively, and to provide a luminous apparatus. <P>SOLUTION: In the wiring substrate for luminous elements, an insulating layer 5 is so provided on the principal surface of a flat-plate-form metal base body 1 made of a sintered metal as to substantially reduce its area requiring an expensive plating without sacrificing its heat radiating property. Further, it reduces its area wherein conductive materials are exposed to the external and suppresses the generation of its electrical short-circuit. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、例えば、発光ダイオード等の発光素子を搭載するための発光素子用配線基板ならびに発光装置に関する。   The present invention relates to a light emitting element wiring board and a light emitting device for mounting a light emitting element such as a light emitting diode.

従来、LEDを用いた発光装置は、非常に発光効率が高く、しかも、白熱電球などと比較すると発光に伴い発生する熱量が小さいために様々な用途に用いられてきた。しかしながら、白熱電球や蛍光灯などよりも発光量が小さいために、照明用ではなく、表示用の光源として用いられ、通電量も30mA程度と非常に小さいものであった(例えば、特許文献1を参照。)。   Conventionally, light emitting devices using LEDs have been used for various applications because of their extremely high luminous efficiency and the small amount of heat generated by light emission compared to incandescent bulbs. However, since it emits less light than incandescent bulbs and fluorescent lamps, it is not used for illumination but as a light source for display, and the energization amount is as small as about 30 mA (for example, see Patent Document 1). reference.).

そして、近年では、発光素子を用いた発光装置の高輝度、白色化に伴い、携帯電話や大型液晶TV等のバックライトに発光装置が多く用いられてきている。しかしながら、発光素子の輝度が向上するとともに、発光装置から発生する熱も増加している。発光素子の輝度の低下を防止するためには、このような熱を素子より速やかに放散する、高い熱放散性を有する発光素子用配線基板が必要となっている(例えば、特許文献2、3を参照。)。   In recent years, with the increase in brightness and whiteness of light-emitting devices using light-emitting elements, light-emitting devices have been frequently used for backlights of mobile phones, large liquid crystal TVs, and the like. However, the luminance of the light emitting element is improved and the heat generated from the light emitting device is also increasing. In order to prevent a decrease in luminance of the light emitting element, a wiring board for a light emitting element having a high heat dissipation property that dissipates such heat more quickly than the element is required (for example, Patent Documents 2 and 3). See).

このような要求に対し、本出願人は、放熱性に優れた焼結金属からなる平板状の金属基体を備えた発光素子用配線基板を提案した(例えば、特許文献4を参照)。
特開2002−134790号公報 特開平11−112025号公報 特開2003−347600号公報 特願2006−019581号
In response to such a requirement, the present applicant has proposed a wiring board for a light emitting element including a flat metal base made of a sintered metal having excellent heat dissipation (see, for example, Patent Document 4).
JP 2002-134790 A Japanese Patent Laid-Open No. 11-112025 JP 2003-347600 A Japanese Patent Application No. 2006-019581

しかしながら、特許文献4に記載の方法では、放熱性を向上させることはできるものの発光素子用配線基板のほとんどが焼結金属で形成されているために、めっき面積が広くなり、コストが高くなってしまうという問題点がある。従って本発明は、安価で熱放散性に優れた発光素子用配線基板ならびに発光装置を提供することを目的とする。   However, although the method disclosed in Patent Document 4 can improve heat dissipation, most of the wiring board for light emitting element is formed of sintered metal, which increases the plating area and increases the cost. There is a problem that. Accordingly, an object of the present invention is to provide a light-emitting element wiring board and a light-emitting device that are inexpensive and excellent in heat dissipation.

本発明の発光素子用配線基板は、焼結金属からなる平板状の金属基体と、該金属基体の上面に形成された発光素子を搭載する搭載部と、前記金属基体よりも薄く前記金属基体の下面を覆ったセラミックスからなる絶縁層と、少なくとも前記金属基体を貫通するセラミックスからなる貫通絶縁体と、前記金属基体と電気的に絶縁されるとともに前記貫通絶縁体の内側を貫通する貫通導体と、前記貫通導体と電気的に接続されるとともに前記金属基体と絶縁され前記搭載部の周囲に設けられた配線と、前記貫通導体と電気的に接続されるとともに前記金属基体と絶縁され前記絶縁層を貫通する外部接続端子と、前記搭載部と前記配線とを取り囲むように形成された焼結金属からなる反射部とを備え、前記金属基体と前記絶縁層と前記貫通絶縁体と前記貫通導体と前記配線と前記外部接続端子と前記反射部とが同時焼成されてなり、前記金属基体にめっきが施されていることを特徴とする。   A wiring board for a light-emitting element according to the present invention includes a flat metal substrate made of sintered metal, a mounting portion for mounting a light-emitting element formed on the upper surface of the metal substrate, and a metal substrate that is thinner than the metal substrate. An insulating layer made of ceramic covering the lower surface, a through insulator made of ceramic that penetrates at least the metal substrate, a through conductor that is electrically insulated from the metal substrate and penetrates the inside of the through insulator, The wiring that is electrically connected to the through conductor and insulated from the metal base and provided around the mounting portion; and the wiring that is electrically connected to the through conductor and insulated from the metal base; An external connection terminal that penetrates, and a reflective portion made of sintered metal formed so as to surround the mounting portion and the wiring, the metal base, the insulating layer, and the through insulator, Serial it through conductor and the wiring and the external connection terminal and said reflection portion is fired simultaneously, characterized in that plating on the metal substrate is applied.

また、本発明の発光素子用配線基板は、前記反射部の上面に、非金属の被覆膜が形成されていることが望ましい。   In the light-emitting element wiring board according to the present invention, it is preferable that a non-metal coating film is formed on the upper surface of the reflecting portion.

また、本発明の発光素子用配線基板は、前記被覆膜がセラミックスからなるとともに、前記金属基体と前記絶縁層と前記貫通絶縁体と前記貫通導体と前記配線と前記外部接続端子と前記反射部と前記被覆膜とが同時焼成されてなることが望ましい。   In the light emitting element wiring board according to the present invention, the coating film is made of ceramics, and the metal base, the insulating layer, the through insulator, the through conductor, the wiring, the external connection terminal, and the reflecting portion. And the coating film are preferably fired at the same time.

本発明の発光装置は、以上説明した発光素子用配線基板の前記搭載部に発光素子を搭載していることを特徴とする。   The light-emitting device of the present invention is characterized in that a light-emitting element is mounted on the mounting portion of the light-emitting element wiring board described above.

本発明の発光素子用配線基板は、基体を焼結金属で形成することにより、樹脂モールド基板やセラミック基板などよりも高い熱伝導率を有し、発光素子から発生する熱を基体全体から効率良く、速やかに系外へ放散することができ、発光素子が過剰に加熱されることを防止できる。そのため輝度低下防止あるいは、さらなる高輝度化が可能となる。しかも金属基体に、絶縁体を介して電気的に絶縁された配線を表面に形成し、更に前記金属基体に貫通して設ける事で、多層化が可能となり複雑な配線設計への対応や基板の小型化が可能となる。また、発光素子搭載部と前記配線とを取り囲むように金属からなる反射部を形成することにより、金属基体からだけでなく反射部からも発光素子が生じる熱を放散することができる。そして反射部によって発光素子を保護できるとともに、発光素子の周辺に蛍光体などを容易に配置することができる。また、反射部により発光素子が発する光を反射させて光の取り出し効率を増加させ、高輝度化を実現することができる。さらに、金属基体および反射部が焼結金属から成ることにより、金属基体と絶縁層と貫通絶縁体と貫通導体と配線と外部接続端子と反射部とを同時焼成にて作製することができ、これによりコストを低減することができる。また、さらに金属基体の露出する面積を減らすことができるのでめっきする面積を小さくでき、コストを低減することができる。   The wiring board for a light emitting device of the present invention has a higher thermal conductivity than that of a resin mold substrate, a ceramic substrate, or the like by forming the substrate from a sintered metal, and efficiently generates heat from the light emitting device from the entire substrate. It is possible to quickly dissipate out of the system and to prevent the light emitting element from being heated excessively. For this reason, it is possible to prevent a decrease in luminance or to further increase the luminance. In addition, by forming wiring electrically insulated through an insulator on the surface of the metal substrate and further penetrating through the metal substrate, it is possible to increase the number of layers and to cope with complicated wiring designs and the substrate. Miniaturization is possible. In addition, by forming a reflective portion made of metal so as to surround the light emitting element mounting portion and the wiring, heat generated by the light emitting element can be dissipated not only from the metal substrate but also from the reflective portion. The light emitting element can be protected by the reflecting portion, and a phosphor or the like can be easily disposed around the light emitting element. Further, the light emitted from the light emitting element can be reflected by the reflecting portion to increase the light extraction efficiency, and high luminance can be realized. Furthermore, since the metal substrate and the reflecting portion are made of sintered metal, the metal substrate, the insulating layer, the penetrating insulator, the penetrating conductor, the wiring, the external connection terminal, and the reflecting portion can be produced by simultaneous firing. Thus, the cost can be reduced. Furthermore, since the exposed area of the metal substrate can be reduced, the plating area can be reduced, and the cost can be reduced.

また、反射部の上面に、非金属の被覆膜が形成されていることで、さらにめっきする面積を小さくでき、コストを低減できるのでより好ましいものとなる。   In addition, since the non-metallic coating film is formed on the upper surface of the reflecting portion, the area to be plated can be further reduced, and the cost can be reduced, which is more preferable.

また、被膜層をセラミックスとし、この被膜層を金属基体と絶縁層と貫通絶縁体と貫通導体と配線と外部接続端子と反射部と同時焼成することで、これらを一体的に形成することができ、工程を削減することができる。   Moreover, the coating layer is made of ceramics, and these coating layers can be integrally formed by simultaneously firing the metal substrate, the insulating layer, the penetrating insulator, the penetrating conductor, the wiring, the external connection terminal, and the reflecting portion. The process can be reduced.

以上説明した本発明の発光素子用配線基板に発光素子を搭載した本発明の発光装置は、めっきのコストが低くできるため、安価となり、さらに発光素子からの発熱を速やかに装置外に放出することができるため、発熱による輝度低下を抑制できる発光装置となる。   The light-emitting device of the present invention in which the light-emitting element is mounted on the wiring board for the light-emitting element of the present invention described above is inexpensive because the plating cost can be reduced, and heat generated from the light-emitting element can be quickly discharged out of the device. Therefore, the light-emitting device can suppress a decrease in luminance due to heat generation.

本発明の発光素子用配線基板は、例えば、図1(a)に示すように、焼結金属からなる平板状の金属基体1と、この金属基体1の上面1aに形成された、発光素子を搭載する搭載部3と、金属基体1よりも薄く、金属基体1の下面を覆ったセラミックスからなる絶縁層5と、少なくとも金属基体1を貫通するセラミックスからなる貫通絶縁体7と、金属基体1と電気的に絶縁されるとともに貫通絶縁体7の内側を貫通する貫通導体9と、貫通導体9と電気的に接続されるとともに金属基体1と絶縁され搭載部3の周囲に設けられた配線11と、搭載部3と配線11とを取り囲むように形成された焼結金属からなる反射部13とを備えるように配置されている。また、発光素子用配線基板15の下面には、発光素子用配線基板15を外部配線基板に接続するための外部接続端子17が設けられている。   A wiring board for a light-emitting element according to the present invention includes, for example, a light-emitting element formed on a flat metal base 1 made of sintered metal and an upper surface 1a of the metal base 1 as shown in FIG. A mounting portion 3 to be mounted; an insulating layer 5 made of ceramics that is thinner than the metal substrate 1 and covers the lower surface of the metal substrate 1; a through insulator 7 made of ceramics that penetrates at least the metal substrate 1; A through conductor 9 that is electrically insulated and penetrates the inside of the through insulator 7; a wiring 11 that is electrically connected to the through conductor 9, insulated from the metal base 1, and provided around the mounting portion 3; The reflection part 13 made of a sintered metal is formed so as to surround the mounting part 3 and the wiring 11. An external connection terminal 17 for connecting the light emitting element wiring substrate 15 to the external wiring substrate is provided on the lower surface of the light emitting element wiring substrate 15.

なお、貫通導体7が貫通絶縁体7と絶縁層5とを貫通して、外部接続端子17をかねていてもよいことはいうまでもない。   Needless to say, the through conductor 7 may also penetrate the through insulator 7 and the insulating layer 5 to serve as the external connection terminal 17.

そして、本発明の発光素子用配線基板15においては、これらの金属基体1と絶縁層5と貫通絶縁体7と貫通導体9と配線11と外部接続端子17と反射部13とが同時焼成されている。   In the light emitting element wiring substrate 15 of the present invention, the metal base 1, the insulating layer 5, the through insulator 7, the through conductor 9, the wiring 11, the external connection terminal 17, and the reflecting portion 13 are simultaneously fired. Yes.

そして、この金属基体1の露出した表面にはAu、Ag、Ni、Cu等のめっき(図示せず)が施されている。また、めっきは配線11や外部接続端子17の表面にも施されている。また、反射部13の内壁面13aにも金属めっき(図示せず)が施されていることが望ましい。これにより、発光素子から出た光が金属めっきによく反射され、発光装置の取り出し効率を向上させることができる。本発明では、金属めっきを施す面が焼結金属で形成されているため、樹脂モールド基板やセラミック基板のようにめっき形成部位への金属層の転写や印刷等を行う必要がなく、工程を簡略化することができる。   The exposed surface of the metal base 1 is plated with Au, Ag, Ni, Cu or the like (not shown). The plating is also applied to the surfaces of the wiring 11 and the external connection terminal 17. Moreover, it is desirable that the inner wall surface 13a of the reflecting portion 13 is also subjected to metal plating (not shown). Thereby, the light emitted from the light emitting element is well reflected by the metal plating, and the extraction efficiency of the light emitting device can be improved. In the present invention, since the surface to be subjected to metal plating is formed of sintered metal, there is no need to transfer or print a metal layer on the plating formation portion like a resin mold substrate or a ceramic substrate, and the process is simplified. Can be

この金属めっきは、反射率の点からAgめっきとすることが望ましく、安価である点ではNiメッキが望ましい。   The metal plating is preferably Ag plating from the viewpoint of reflectance, and Ni plating is preferable from the viewpoint of low cost.

本発明の発光素子用配線基板15によれば、金属基体1ならびに反射部13の材料として焼結金属を用いるとともに、金属基体1を貫通するように貫通絶縁体7および貫通導体9を設けることが重要である。即ち、金属基体1ならびに反射部13の材料として焼結金属を用いることにより、樹脂モールド基板やセラミック基板よりも高い放熱性を確保し、発光素子から発生する熱を発光素子用配線基板15全体から効率よく放出することができる。   According to the light emitting element wiring substrate 15 of the present invention, the sintered metal is used as the material of the metal base 1 and the reflecting portion 13, and the through insulator 7 and the through conductor 9 are provided so as to penetrate the metal base 1. is important. That is, by using a sintered metal as a material for the metal substrate 1 and the reflection portion 13, heat dissipation higher than that of a resin mold substrate or a ceramic substrate is ensured, and heat generated from the light emitting element is transmitted from the entire wiring board 15 for the light emitting element. It can be released efficiently.

また、金属基体1よりも薄く、金属基体1の下面を覆ったセラミックスからなる絶縁層5を設けることにより、発光素子用配線基板15を他の外部配線基板(図示せず)へ実装する際に金属基体1が他の外部配線基板と接触して電気回路が短絡することを防ぐことができる。さらに、発光素子用配線基板15をめっきする場合、絶縁層5が金属基体1の表面に露出している面積を小さくしているので、めっき面積を減少することができるため、コストを低減することもできる。この絶縁層5は放熱性の観点から、できるだけ薄く形成することが望ましく、絶縁層厚みを300μm、特に100μm以下、さらに30μm以下とすることで放熱性への影響を小さくすることができる。この絶縁層5は、貫通絶縁体7との接合性を考慮すれば、貫通絶縁体7と同様の組成物で作製することが望ましい。   Further, by providing the insulating layer 5 made of ceramics which is thinner than the metal substrate 1 and covers the lower surface of the metal substrate 1, the light emitting element wiring substrate 15 is mounted on another external wiring substrate (not shown). It is possible to prevent the metal base 1 from coming into contact with another external wiring board and short circuiting the electric circuit. Furthermore, when plating the wiring board 15 for light emitting elements, since the area where the insulating layer 5 is exposed on the surface of the metal substrate 1 is reduced, the plating area can be reduced, thereby reducing the cost. You can also. The insulating layer 5 is desirably formed as thin as possible from the viewpoint of heat dissipation, and the influence on heat dissipation can be reduced by setting the thickness of the insulating layer to 300 μm, particularly 100 μm or less, and further 30 μm or less. The insulating layer 5 is desirably made of the same composition as that of the through insulator 7 in consideration of the bonding property with the through insulator 7.

また、金属基体1に貫通絶縁体7および貫通導体9を設けることにより、発光素子用配線基板15の多層化、配線設計の多様化、小型化が可能となる。そして、金属基体1に焼結金属からなる反射部13を設けることで発光素子から生じる光を反射させて、光の取り出し効率を向上させるとともに、発光素子から発生した熱を放散し、発光素子用配線基板15の放熱性を向上させることができる。   Further, by providing the through insulator 7 and the through conductor 9 on the metal base 1, it becomes possible to make the wiring board 15 for the light emitting element multilayer, diversify the wiring design, and reduce the size. And by providing the reflecting part 13 which consists of sintered metals in the metal base | substrate 1, while reflecting the light which arises from a light emitting element, while improving the extraction efficiency of light, the heat generated from the light emitting element is dissipated and it is for light emitting elements. The heat dissipation of the wiring board 15 can be improved.

また、金属基体1および反射部13を焼結金属により形成することで、金属基体1と、貫通絶縁体7と貫通導体9と配線11および反射部13とを同時焼成にて作製することができるため、部材の数や工程数を削減することができ、コストを低減することができる。   Further, by forming the metal substrate 1 and the reflection portion 13 from sintered metal, the metal substrate 1, the through insulator 7, the through conductor 9, the wiring 11, and the reflection portion 13 can be produced by simultaneous firing. Therefore, the number of members and the number of processes can be reduced, and the cost can be reduced.

また、反射部13の上面13bに、非金属の被覆膜19を形成することで、発光素子用配線基板15に施すめっきの面積をさらに小さくすることができる。この被覆層19は樹脂などによって形成してもよいが、放熱性の観点からは熱伝導率に優れるセラミックスにより形成することが望ましく、貫通絶縁体7や絶縁層5と同様の組成物で作製することが望ましい。また、被覆膜19をセラミックスとした場合には、被覆膜19を、金属基体1と絶縁層5と貫通絶縁体7と貫通導体9と配線11と外部接続端子17と反射部13と同時焼成することで工程を削減することができるとともに、被覆膜19と反射部13との接合性を容易に向上させることができる。   In addition, by forming the non-metallic coating film 19 on the upper surface 13b of the reflecting portion 13, the area of the plating applied to the light emitting element wiring substrate 15 can be further reduced. The coating layer 19 may be formed of a resin or the like, but is preferably formed of ceramics having excellent thermal conductivity from the viewpoint of heat dissipation, and is formed of the same composition as the through insulator 7 and the insulating layer 5. It is desirable. Further, when the coating film 19 is made of ceramic, the coating film 19 is simultaneously formed with the metal substrate 1, the insulating layer 5, the through insulator 7, the through conductor 9, the wiring 11, the external connection terminal 17, and the reflecting portion 13. By firing, the number of steps can be reduced, and the bonding property between the coating film 19 and the reflecting portion 13 can be easily improved.

また、図1(b)に示すように、発光素子用配線基板15の上面における金属基体1と貫通絶縁体7との境界は、クラックの発生や隙間の発生が起こりやすいことから、被覆絶縁層21で覆うことが望ましい。なお、この被覆絶縁層21は貫通導体9を露出させて配線11と接続させるため、例えばリング状に形成されている。この被覆絶縁層21は貫通絶縁体7との接合性を考慮すれば、貫通絶縁体7と同様の組成物で作製することが望ましい。   Further, as shown in FIG. 1B, the boundary between the metal substrate 1 and the through insulator 7 on the upper surface of the light emitting element wiring substrate 15 is liable to generate cracks or gaps, and therefore the covering insulating layer It is desirable to cover with 21. The covering insulating layer 21 is formed, for example, in a ring shape so that the through conductor 9 is exposed and connected to the wiring 11. The covering insulating layer 21 is desirably made of the same composition as that of the through insulator 7 in consideration of the bonding property with the through insulator 7.

さらに、金属基体1の熱伝導率が、150W/(m・K)以上であることが望ましい。これにより、良好な放熱性を実現することができ、発光素子から生じる熱を速やかに放散することができる。   Furthermore, it is desirable that the thermal conductivity of the metal substrate 1 is 150 W / (m · K) or more. Thereby, favorable heat dissipation can be realized and heat generated from the light emitting element can be quickly dissipated.

そして、金属基体1が、W、MoおよびCuのうち、少なくとも1種を主成分とすることが望ましい。WおよびMoは高融点金属であるため1300〜1600℃程度の高温焼成セラミックスと同時焼成することができる。さらに、熱膨張率が絶縁層を形成するセラミックスに近いため信頼性の高い発光素子用配線基板を作製することができる。また、Cuは熱伝導率が高く、特に放熱性に優れている。また、例えば、貫通絶縁体7としていわゆるガラスセラミックスを用いて、Cuの含有率を高めた場合には、1000℃程度の低い温度で発光素子用配線基板15を焼成することもできる。   And it is desirable for the metal base | substrate 1 to have at least 1 sort (s) as a main component among W, Mo, and Cu. Since W and Mo are refractory metals, they can be co-fired with high-temperature fired ceramics at about 1300 to 1600 ° C. Furthermore, since the coefficient of thermal expansion is close to that of ceramics forming the insulating layer, a highly reliable wiring board for a light-emitting element can be manufactured. Cu has a high thermal conductivity and is particularly excellent in heat dissipation. Further, for example, when so-called glass ceramics is used as the through insulator 7 and the Cu content is increased, the light emitting element wiring substrate 15 can be fired at a low temperature of about 1000 ° C.

また、これらの金属を組み合わせることにより、所望の熱伝導率や熱膨張率をもつ金属基体1を形成することができる。   Further, by combining these metals, the metal substrate 1 having a desired thermal conductivity and thermal expansion coefficient can be formed.

また、反射部13は、金属基体1と同じ主成分からなることが望ましい。これにより金属基体9と金属基体1との間で合金が形成されるなどして、緻密化の挙動が乱れたりするなどの不具合の発生を抑制することができる。また、金属基体1と反射部13の同時焼成による変形を抑制することができ、高寸法精度の発光素子用配線基板15を容易に得ることができる。   Moreover, it is desirable that the reflecting portion 13 is made of the same main component as the metal substrate 1. As a result, it is possible to suppress the occurrence of problems such as the formation of an alloy between the metal base 9 and the metal base 1 and the disturbance of the densification behavior. Moreover, the deformation | transformation by simultaneous baking of the metal base | substrate 1 and the reflection part 13 can be suppressed, and the wiring board 15 for light emitting elements with a high dimensional accuracy can be obtained easily.

また、貫通導体9や配線11が、W、Mo、CuおよびAgのうち少なくとも1種を主成分とすることが望ましい。これにより電気抵抗の低い貫通導体9や配線11を形成できる為、優れた電気特性を有する発光素子用配線基板15を得ることができる。   Moreover, it is desirable that the through conductor 9 and the wiring 11 have at least one of W, Mo, Cu, and Ag as a main component. Thereby, since the through conductor 9 and the wiring 11 having low electric resistance can be formed, the light emitting element wiring substrate 15 having excellent electric characteristics can be obtained.

また、他にも多少高価ではあるが、金属基体1や貫通導体9および配線11としてAl、Ag、AuおよびPtなどの金属を用いることができるのは言うまでもない。   In addition, it is needless to say that metals such as Al, Ag, Au, and Pt can be used for the metal substrate 1, the through conductor 9, and the wiring 11, although they are somewhat expensive.

また、貫通絶縁体7、絶縁層5、被覆層19ならびに被覆絶縁層21が、アルミナ、ムライト、ジルコニア、マグネシア、カルシア、窒化アルミニウム、窒化珪素、そしてガラスセラミックスのうち、少なくとも1種を主成分とすることが望ましい。絶縁性に優れたこれらの材料を用いることにより、貫通絶縁体7ならびに被覆絶縁層21が薄くても貫通導体9や配線11が金属基体1と充分に絶縁をとることが可能となり、貫通絶縁体7ならびに被覆絶縁層21を高密度で形成する事ができ、さらに金属基体1との同時焼成も容易となる。   The through insulator 7, the insulating layer 5, the covering layer 19, and the covering insulating layer 21 are mainly composed of at least one of alumina, mullite, zirconia, magnesia, calcia, aluminum nitride, silicon nitride, and glass ceramics. It is desirable to do. By using these materials having excellent insulating properties, the through conductor 9 and the wiring 11 can be sufficiently insulated from the metal substrate 1 even if the through insulator 7 and the covering insulating layer 21 are thin. 7 and the covering insulating layer 21 can be formed with high density, and simultaneous firing with the metal substrate 1 is facilitated.

なお、本発明の発光素子用配線基板15においては、発光素子用配線基板15の下面15bには、外部配線基板との接続端子17が設けられており、被覆絶縁層21が設けられていることが望ましい。   In the light emitting element wiring substrate 15 of the present invention, the connection terminal 17 to the external wiring substrate is provided on the lower surface 15b of the light emitting element wiring substrate 15, and the covering insulating layer 21 is provided. Is desirable.

また、金属基体1は多層であってもよく、反射部13の内壁面13aには傾斜が設けられていてもよいことはいうまでもない。   Needless to say, the metal substrate 1 may be multi-layered, and the inner wall surface 13a of the reflecting portion 13 may be provided with an inclination.

なお、図2(a)、(b)に示すように、発光素子23は、接続層25により発光素子用配線基板15に固定され、電力の供給はボンディングワイヤ27によりなされているが、発光素子用配線基板15との接続形態は、フリップチップ接続であってもよいことはいうまでもない。   2A and 2B, the light-emitting element 23 is fixed to the light-emitting element wiring substrate 15 by a connection layer 25, and power is supplied by a bonding wire 27. Needless to say, the connection form with the wiring board 15 may be flip-chip connection.

また、発光素子23は、モールド材29により被覆されているが、モールド材29を用いずに、蓋体(図示せず)を用いて封止してもよく、また、モールド材29と蓋体とを併用してもよい。蓋体を用いる場合には蓋体は、ガラスなどの透光性の素材を用いることが望ましい。   Further, the light emitting element 23 is covered with the molding material 29, but may be sealed with a lid (not shown) without using the molding material 29, or the molding material 29 and the lid And may be used in combination. When using a lid, it is desirable to use a translucent material such as glass for the lid.

なお、必要に応じて、このモールド材29に発光素子23が放射する光を波長変換するための蛍光体(図示せず)を含有させてもよい。   In addition, you may make this mold material 29 contain the fluorescent substance (not shown) for wavelength-converting the light which the light emitting element 23 radiates | emits as needed.

また、発光素子23の熱を金属基体1に効率よく伝達するという観点から、接続層25として半田、インジウム、AuSn合金などの金属を用いることが望ましい。   Further, from the viewpoint of efficiently transferring the heat of the light emitting element 23 to the metal substrate 1, it is desirable to use a metal such as solder, indium, AuSn alloy as the connection layer 25.

以上説明した本発明の発光素子用配線基板15に発光素子23を搭載した本発明の発光装置31によれば、発光素子23からの発熱を速やかに装置外に放出することができるため、発熱による輝度低下を抑制できる。   According to the light-emitting device 31 of the present invention in which the light-emitting element 23 is mounted on the light-emitting element wiring substrate 15 of the present invention described above, heat generated from the light-emitting element 23 can be quickly discharged outside the apparatus. A reduction in luminance can be suppressed.

次に、本発明における発光素子用配線基板15の製造方法について説明する。   Next, the manufacturing method of the light emitting element wiring board 15 in the present invention will be described.

まず、以下に説明するように焼成することによって金属基体1となる金属シートと貫通絶縁体となるセラミックグリーンシートおよび貫通金属体となる導体ペーストを作製する。また、必要に応じセラミックペーストを作製する。   First, by firing as described below, a metal sheet to be the metal substrate 1, a ceramic green sheet to be a through insulator, and a conductor paste to be a through metal body are produced. Moreover, a ceramic paste is produced as needed.

金属シートは、金属粉末と樹脂と溶剤とを所定の割合で混合して調整した金属スラリーから、従来周知のドクターブレード法などによりシート上に形成される。なお、金属スラリーには必要に応じてセラミック粉末を含有させてもよい。   The metal sheet is formed on a sheet by a conventionally known doctor blade method or the like from a metal slurry prepared by mixing a metal powder, a resin, and a solvent at a predetermined ratio. The metal slurry may contain ceramic powder as necessary.

また、セラミックグリーンシートも、セラミック粉末、樹脂および溶剤などから形成されるセラミックスラリーからドクターブレード法などによりシート状に形成される。   The ceramic green sheet is also formed into a sheet shape by a doctor blade method or the like from a ceramic slurry formed from ceramic powder, resin, solvent, and the like.

金属シート並びにセラミックグリーンシートに用いるセラミック粉末、金属粉末の粒径は平均粒径で0.01〜10μm程度のものが好適に用いられ、特に、1〜5μmの範囲の粉末が取り扱いや焼結性に優れている。   The ceramic powder used for the metal sheet and the ceramic green sheet, and the particle diameter of the metal powder is preferably about 0.01 to 10 μm as an average particle diameter. Particularly, powder in the range of 1 to 5 μm is handled and sintered. Is excellent.

また、望ましくはW、Mo、CuおよびAgのうち少なくとも1種を主成分とする導体ペースト45を作製する。金属粉末、樹脂および溶剤を所定の割合で混合し、溶剤を減圧過熱等によって除くことにより作製される。また、導体ペーストには必要に応じてセラミック粉末を含有させてもよい。   Desirably, a conductive paste 45 containing at least one of W, Mo, Cu, and Ag as a main component is prepared. The metal powder, resin and solvent are mixed at a predetermined ratio, and the solvent is removed by heating under reduced pressure or the like. Moreover, you may make a conductor paste contain a ceramic powder as needed.

そして、セラミックペーストはセラミック粉末、樹脂および溶剤を混合し、溶剤を除くことによって作製される。   The ceramic paste is prepared by mixing ceramic powder, resin and solvent and removing the solvent.

導体ペーストおよびセラミックペーストに用いる金属粉末、セラミック粉末の粒径は平均粒径で0.01〜10μm程度のものが好適に用いられ、特に、1〜5μmの範囲の粉末が取り扱いや焼結性に優れている。   The metal powder used for the conductor paste and the ceramic paste, and the ceramic powder having an average particle diameter of about 0.01 to 10 μm is preferably used. Particularly, powder in the range of 1 to 5 μm is used for handling and sintering. Are better.

まず、図3(a)に示すように、例えばセラミックグリーンシート43にマイクロドリル、レーザー等により直径50〜250μmのビアホール47を形成し、図3(b)に示すように、このビアホール47に導体ペースト45を印刷等により埋め込んで貫通導体成形体45aを形成し、導体埋め込みシート49を作製する。   First, as shown in FIG. 3A, a via hole 47 having a diameter of 50 to 250 μm is formed in the ceramic green sheet 43 by, for example, a micro drill or a laser, and a conductor is formed in the via hole 47 as shown in FIG. The paste 45 is embedded by printing or the like to form a through conductor molded body 45a, and a conductor embedded sheet 49 is produced.

また、図3(c)に示すように、打ち抜き穴51を具備する金型53の上面に、金属シート54を配置し、図3(d)に示すように、押し金型55で金属シート54を打ち抜く。   Further, as shown in FIG. 3C, a metal sheet 54 is disposed on the upper surface of the mold 53 having the punched holes 51, and as shown in FIG. Punch out.

さらに図4(e)に示すように打ち抜いた金属シート54の上に、予めセラミックグリーンシート43に導体ペースト45を埋め込んでおいた導体埋め込みシート49を配置し、図4(f)に示すように、押し金型55で導体埋め込みシート49を打ち抜くと同時に、導体埋め込みシート49の一部を金属シート54に形成された穴に挿入する。そして、金属シート54と導体埋め込みシート49の不要な部分を除去することにより、図4(g)に示すような焼成後に貫通導体9や貫通絶縁体7および金属基体1となる複合成形体57を作製することができる。なお、金属シート54とセラミックグリーンシート43は略同一厚みであることが望ましい。   Further, on the metal sheet 54 punched out as shown in FIG. 4 (e), a conductor embedded sheet 49 in which the conductor paste 45 is embedded in the ceramic green sheet 43 in advance is arranged, as shown in FIG. 4 (f). The conductor embedding sheet 49 is punched out with the pressing die 55 and at the same time, a part of the conductor embedding sheet 49 is inserted into the hole formed in the metal sheet 54. Then, by removing unnecessary portions of the metal sheet 54 and the conductor-embedded sheet 49, the composite molded body 57 to be the through conductor 9, the through insulator 7, and the metal substrate 1 after firing as shown in FIG. Can be produced. It is desirable that the metal sheet 54 and the ceramic green sheet 43 have substantially the same thickness.

そして、例えば、図4(h)に示すように、この複合成形体57の表面に金属シート54と接触しないように、また、貫通導体成形体45aの片側の端面を覆うように導体ペーストを印刷等により形成することで、焼成後に配線11となる配線成形体59を形成することができる。貫通導体成形体45aの配線11となる導体ペーストを形成していない側の端面に、あらかじめ穴加工を施したセラミックグリーンシート43を積層し、導体ペーストを印刷等により形成することで絶縁層5と接続端子17となる配線成形体59を作製することができる。   Then, for example, as shown in FIG. 4 (h), a conductor paste is printed so as not to contact the metal sheet 54 on the surface of the composite molded body 57 and to cover one end face of the through conductor molded body 45a. By forming the wiring formed body etc., the wiring molded body 59 to be the wiring 11 after firing can be formed. A ceramic green sheet 43 that has been drilled in advance is laminated on the end surface of the through conductor molded body 45a that is not formed with the conductor paste, and the conductor paste is formed by printing or the like. A wiring molded body 59 to be the connection terminal 17 can be manufactured.

また、導体ペーストによって形成された配線成形体59は、例えば焼成後に内部配線とすることもできることはいうまでもない。   Needless to say, the wiring molded body 59 formed of the conductive paste can be used as an internal wiring after firing, for example.

この配線成形体59は貫通絶縁体7と貫通導体9との境界にクラックや隙間が発生することを抑制するために、セラミックグリーンシート43と貫通導体成形体45aとの境界を覆うように形成することが望ましい。   The wiring molded body 59 is formed so as to cover the boundary between the ceramic green sheet 43 and the through conductor molded body 45a in order to suppress the occurrence of cracks and gaps at the boundary between the through insulator 7 and the through conductor 9. It is desirable.

例えば、配線成形体59を形成する前に、図5(a)に示すように図4(g)で作製した複合成形体57の表面にセラミックペーストを塗布して、焼成後に被覆絶縁層21となる被覆絶縁層成形体61を、貫通導体成形体45aを露出させるとともに金属シート54とセラミックグリーンシート43との境界を覆うように形成することが望ましい。これにより、金属基体1と貫通絶縁体7との境界にクラックや隙間が発生することを抑制することができる。なお、貫通導体成形体45aを露出させるためには、被覆絶縁層成形体61をリング状あるいはドーナツ状に形成すればよい。   For example, before forming the wiring molded body 59, a ceramic paste is applied to the surface of the composite molded body 57 produced in FIG. 4 (g) as shown in FIG. It is desirable to form the covering insulating layer formed body 61 so as to expose the through conductor formed body 45 a and to cover the boundary between the metal sheet 54 and the ceramic green sheet 43. Thereby, it can suppress that a crack and a clearance gap generate | occur | produce in the boundary of the metal base | substrate 1 and the penetration insulator 7. FIG. In order to expose the through conductor molded body 45a, the covering insulating layer molded body 61 may be formed in a ring shape or a donut shape.

また、金属基体1の下面に形成する絶縁層5となる絶縁層成形体62は、被覆絶縁層成形体61の場合と同様に例えば、セラミックスラリーを用いて形成してもよく、予め作製しておいた貫通孔を設けセラミックグリーンシートを用いて形成してもよい。なお、絶縁層5は被覆絶縁層21とは異なり、金属基体1の下面を覆うように形成する必要があることはいうまでもない。   In addition, the insulating layer molded body 62 to be the insulating layer 5 formed on the lower surface of the metal substrate 1 may be formed using, for example, a ceramic slurry, as in the case of the coated insulating layer molded body 61, and prepared in advance. It may be formed using a ceramic green sheet provided with a through hole. Needless to say, the insulating layer 5 needs to be formed so as to cover the lower surface of the metal substrate 1, unlike the covering insulating layer 21.

すなわち、絶縁層5は金属基体1の下面の全面にわたって形成されていることが重要である。そのため、図5(b)に示すように、絶縁層成形体62は金属シート54の全面を覆うように形成する必要がある。   That is, it is important that the insulating layer 5 is formed over the entire lower surface of the metal substrate 1. Therefore, as shown in FIG. 5B, the insulating layer formed body 62 needs to be formed so as to cover the entire surface of the metal sheet 54.

そして、貫通導体成形体45aと接続させ、金属シート54と接続しないように、焼成後に接続端子となる17となる接続端子成形体58を形成することで、接続端子成形体58と絶縁層成形体62とを備えた複合成形体57を作製することができる。   Then, the connection terminal molded body 58 and the insulating layer molded body are formed by forming the connection terminal molded body 58 that becomes the connection terminal after firing so as to be connected to the through conductor molded body 45a and not to be connected to the metal sheet 54. The composite molded body 57 including 62 can be manufactured.

また、図5(c)に示すように、貫通導体成形体45aと接続させ、金属シート54と接続しないように配線成形体59を形成することで、被覆絶縁層成形体61と配線成形体59とを備えた複合成形体57を作製することができる。   Further, as shown in FIG. 5C, the insulation layer molded body 61 and the wiring molded body 59 are formed by connecting the through conductor molded body 45 a and forming the wiring molded body 59 so as not to be connected to the metal sheet 54. Can be produced.

なお、例えば配線成形体59や被覆絶縁層成形体61を備えた複数の複合成形体57を積層した場合には配線成形体59は焼成後に内層配線となる場合があり、また、被覆絶縁層成形体61は焼成後に内部絶縁層となる場合がある。   For example, when a plurality of composite molded bodies 57 including the wiring molded body 59 and the covering insulating layer molded body 61 are laminated, the wiring molded body 59 may become an inner layer wiring after firing, and the covering insulating layer forming The body 61 may become an internal insulating layer after firing.

以下に反射部13の形成方法について説明する。まず、図6(a)に示すように、金属シート54とセラミックグリーンシート43とを積層し、この積層体に図6(b)に示すように貫通孔71を形成して、焼成後に反射部13となる反射部成形体73を形成した。   Below, the formation method of the reflection part 13 is demonstrated. First, as shown in FIG. 6 (a), a metal sheet 54 and a ceramic green sheet 43 are laminated, and through holes 71 are formed in the laminate as shown in FIG. 6 (b). The reflection part molded body 73 to be 13 was formed.

さらに、例えば図5(b)に示すような絶縁層成形体62を備えた金属シート54を積層することで図6(c)に示すような焼成後に本発明の発光素子用配線基板15となる成形体を容易に作製することができる。   Furthermore, for example, by laminating a metal sheet 54 provided with an insulating layer formed body 62 as shown in FIG. 5B, the light emitting element wiring substrate 15 of the present invention is obtained after firing as shown in FIG. 6C. A molded body can be easily produced.

なお、図3〜図5で示した図は貫通導体9を形成する部分の要部拡大図であり、図3〜図5で示した貫通導体成形体45aは金属シート54に複数形成してもよいことはいうまでもない。   3 to 5 are enlarged views of the main part of the portion where the through conductor 9 is formed, and a plurality of through conductor molded bodies 45a shown in FIGS. 3 to 5 may be formed on the metal sheet 54. Needless to say, it is good.

なお、反射部13の内壁面13aは、図1(a)に示すように金属基体1に対して垂直に配設されていてもよいし、傾斜を有するように配設されてもよい。内壁面13aが垂直な反射部13は、通常の金型で打ち抜いて作製すればよく、また、内壁面13aが傾斜を有する反射部13は、例えばパンチの外径よりもダイスの内径が0.05〜1mm程度大きな打ち抜き金型を用いて金属シート54を打ち抜き加工して作製することができる。   In addition, the inner wall surface 13a of the reflection part 13 may be arrange | positioned perpendicularly | vertically with respect to the metal base | substrate 1 as shown to Fig.1 (a), and may be arrange | positioned so that it may incline. The reflecting part 13 whose inner wall surface 13a is vertical may be produced by punching with a normal mold, and the reflecting part 13 whose inner wall surface 13a is inclined has a die inner diameter of 0. 0 than the outer diameter of the punch, for example. The metal sheet 54 can be manufactured by punching using a punching die having a size of about 05 to 1 mm.

なお、貫通絶縁体7や貫通導体9の形状は、四角や角柱形状でも良いし、その他円形あるいは円柱形状など所望の形状にすることが可能である。   The shape of the through insulator 7 and the through conductor 9 may be a square shape or a prism shape, or may be a desired shape such as a circular shape or a cylindrical shape.

また、配線成形体59は、薄膜法により形成したり、金属箔を成形体の表面に転写するなどして形成できることはいうまでもない。   Needless to say, the wiring molded body 59 can be formed by a thin film method or by transferring a metal foil onto the surface of the molded body.

純度99%以上、平均粒径2.0μmのW粉末を70質量%、純度99%以上、平均粒径2.0μmのCu粉末を30質量%の割合で混合し、さらに成形用有機樹脂(バインダ)としてアクリル系バインダと、トルエンを溶媒として添加し、金属シートとなるスラリーを調整した。しかる後に、ドクターブレード法にて金属シートを作製した。   W powder with a purity of 99% or more and an average particle size of 2.0 μm is mixed in a proportion of 70% by mass, Cu powder with a purity of 99% or more and an average particle size of 2.0 μm is mixed in a proportion of 30% by mass, and a molding organic resin (binder ) And an acrylic binder and toluene were added as solvents to prepare a slurry to be a metal sheet. Thereafter, a metal sheet was produced by a doctor blade method.

また、純度99%以上、平均粒子径2μmのW粉末を70質量%、純度99%以上、平均粒子径2μmのCu粉末30質量%にアクリル系バインダおよび溶媒としてアセトンを混合したのち、減圧過熱によりアセトンを取り除いて導体ペーストを作製した。   Also, after mixing W powder with a purity of 99% or more and an average particle diameter of 2 μm with 70% by mass, purity 99% or more of Cu powder with an average particle diameter of 2 μm and acrylic binder and acetone as a solvent, Acetone was removed to prepare a conductor paste.

また、原料粉末として純度99%以上、平均粒径が1.5μmのAl粉末を90質量%と、純度99%以上、平均粒子径1.3μmのMn粉末を5質量%と、純度99%以上、平均粒径1.0μmのSiO粉末を5質量%の割合で混合して、金属シートと同様に、アクリル系バインダとトルエンを混合し、セラミックスラリーを調整した。しかる後に、ドクターブレード法にてAlを主成分とし、金属シートと略同一厚みのセラミックグリーンシートを作製した。 Moreover, 90 mass% of Al 2 O 3 powder having a purity of 99% or more and an average particle diameter of 1.5 μm as raw material powder, and 5 mass% of Mn 2 O 3 powder having a purity of 99% or more and an average particle diameter of 1.3 μm. Then, an SiO 2 powder having a purity of 99% or more and an average particle size of 1.0 μm was mixed at a ratio of 5 mass%, and in the same manner as the metal sheet, an acrylic binder and toluene were mixed to prepare a ceramic slurry. Thereafter, a ceramic green sheet having Al 2 O 3 as a main component and substantially the same thickness as the metal sheet was produced by a doctor blade method.

また、セラミックグリーンシートと同様の比率でAl粉末とMn粉末とSiO粉末とを混合し、これにアクリル系バインダおよびアセトンを添加し、その後減圧過熱することにより溶剤を除き、セラミックペーストを作製した。 Also, Al 2 O 3 powder, Mn 2 O 3 powder and SiO 2 powder are mixed at the same ratio as the ceramic green sheet, and an acrylic binder and acetone are added thereto, and then the solvent is removed by heating under reduced pressure. A ceramic paste was prepared.

次に、上記のセラミックグリーンシートに対して、打ち抜き加工を施し、直径が200μmのビアホールを形成し、このビアホール内に、導体ペーストをスクリーン印刷法によって充填し、導体埋め込みシートを作製した。   Next, the ceramic green sheet was punched to form a via hole having a diameter of 200 μm, and a conductor paste was filled in the via hole by a screen printing method to produce a conductor embedded sheet.

そして、金属シートの所定箇所に貫通孔を形成し、金属シートにおける貫通孔形成部分を導体埋め込みシートから押圧することによって、導体埋め込みシートの一部を貫通孔内に嵌め込み、金属シートと導体埋め込みシートとを一体化した。   Then, a through hole is formed at a predetermined position of the metal sheet, and a part of the conductor embedded sheet is fitted into the through hole by pressing a through hole forming portion of the metal sheet from the conductor embedded sheet. And integrated.

このような金属シートと導体埋め込みシートとが一体化した成形体を3層重ねて積層した。   Three molded bodies in which such a metal sheet and a conductor-embedded sheet were integrated were stacked and laminated.

そして、セラミックペーストを用いてスクリーン印刷により、この積層体の一方の主面に、金属シートとセラミックグリーンシートとの境界を覆うように被覆絶縁層成形体をリング状に形成した。なお、このときビアホールに充填された貫通導体となる導体ペーストが露出するようにした。さらに、貫通導体成形体を覆うように、被覆絶縁層成形体の上に、導体ペーストを印刷塗布し、焼成後に配線および接続端子となるように配線成形体を形成した。   Then, a coated insulating layer molded body was formed in a ring shape on one main surface of the laminate by using screen printing using a ceramic paste so as to cover the boundary between the metal sheet and the ceramic green sheet. At this time, the conductive paste serving as the through conductor filled in the via hole was exposed. Furthermore, a conductor paste was printed and applied on the covering insulating layer molded body so as to cover the through conductor molded body, and a wiring molded body was formed so as to become wiring and connection terminals after firing.

また、被覆絶縁層成形体を形成した主面の反対の主面に、セラミックペーストを塗布して、絶縁層成形体を形成した。なお、この絶縁層成形体は焼成後に絶縁層となるもので、焼成後の厚みが表1に示す値となるようにした。   Moreover, the ceramic paste was apply | coated to the main surface opposite to the main surface in which the coating insulating layer molded object was formed, and the insulating layer molded object was formed. In addition, this insulating layer molded body became an insulating layer after firing, and the thickness after firing was set to the values shown in Table 1.

なお、絶縁層成形体は、セラミックグリーンシートの一部および貫通導体成形体を露出させるとともに、セラミックグリーンシートと金属シートの境界を覆うようにリング状の穴を形成するように形成した。そして、このリング状の穴に、導体ペーストを印刷塗布することで焼成後に外部接続端子となる外部接続端子成形体を形成した。   The insulating layer molded body was formed so as to expose a part of the ceramic green sheet and the through conductor molded body and to form a ring-shaped hole so as to cover the boundary between the ceramic green sheet and the metal sheet. And the external connection terminal molded object used as an external connection terminal after baking was formed by carrying out printing application | coating of the conductor paste in this ring-shaped hole.

このようにして、金属シートに貫通絶縁体成形体、貫通導体成形体、絶縁層成形体、被覆絶縁層成形体、配線成形体、外部接続端子成形体を設けた複合成形体を作製した。   In this way, a composite molded body was prepared in which a metal sheet was provided with a through insulator molded body, a through conductor molded body, an insulating layer molded body, a coated insulating layer molded body, a wiring molded body, and an external connection terminal molded body.

さらに、セラミックグリーンシートを表面に配置して、2層の金属シートおよび1層のセラミックグリーンシートを積層し、この積層体に穴を形成して、焼成後に反射部となる反射部成形体を作製した。   Furthermore, a ceramic green sheet is arranged on the surface, a two-layer metal sheet and a single-layer ceramic green sheet are laminated, a hole is formed in this laminate, and a reflecting portion molded body that becomes a reflecting portion after firing is produced. did.

また、3層の金属シートを積層し、この積層体に穴を形成して、焼成後に反射部となる反射部成形体を作製した。   Moreover, the metal sheet of 3 layers was laminated | stacked, the hole was formed in this laminated body, and the reflection part molded object used as a reflection part after baking was produced.

この2種類の反射部積層体の金属シート側を、先に作製した複合成形体の配線成形体が形成された側の主面に当接させ、積層した。   The metal sheet side of these two types of reflecting portion laminates was brought into contact with the main surface on the side where the wiring molded body of the composite molded body produced previously was formed, and laminated.

そして、露点+25℃の窒素水素混合雰囲気にて脱脂を行った後、引き続き、露点+25℃の窒素水素混合雰囲気にて1300℃の最高温度で2時間焼成した。   Then, after degreasing in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C., it was subsequently baked at a maximum temperature of 1300 ° C. for 2 hours in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C.

こうして、図1に示すような発光素子用配線基板を作製した。   Thus, a wiring board for a light emitting element as shown in FIG. 1 was produced.

作製した発光素子用配線基板の寸法は、外形寸法が5mm×5mm×1mmで、そのうち、反射部の厚みが0.4mmである。また、反射部には内径3.0mmの有底穴を形成した。また、外部接続端子は焼成後に1.5×1.5mmの寸法とした。   The dimensions of the produced light-emitting element wiring board are 5 mm × 5 mm × 1 mm in outer dimensions, and the thickness of the reflecting portion is 0.4 mm. Further, a bottomed hole having an inner diameter of 3.0 mm was formed in the reflecting portion. Further, the external connection terminal had a size of 1.5 × 1.5 mm after firing.

また、比較例として基体がセラミックスからなる試料を以下のようにして作製した。上記のセラミックグリーンシートに対して、打ち抜き加工を施し、直径が200μmのビアホールを形成し、このビアホール内に、導体ペーストをスクリーン印刷法によって充填するとともに、配線パターン状に印刷塗布した。次いで、金属層となる導体ペーストを塗布されたセラミックシートを組み合わせ、位置合わせし、積層圧着し、焼成後に外形5mm×5mm×厚み0.6mmとなる積層体を作製した。また、外部接続端子は焼成後に1.5×1.5mmの寸法とした。   Further, as a comparative example, a sample whose base was made of ceramics was produced as follows. The ceramic green sheet was punched to form a via hole having a diameter of 200 μm. The via hole was filled with a conductive paste by a screen printing method and printed and applied in a wiring pattern. Next, a ceramic sheet coated with a conductive paste to be a metal layer was combined, aligned, laminated and pressure-bonded, and a laminate having an outer shape of 5 mm × 5 mm × thickness 0.6 mm after firing was produced. Further, the external connection terminal had a size of 1.5 × 1.5 mm after firing.

そして、焼成後に厚み0.4mmとなり、焼成後に内径3.0mmの穴が形成される反射部となる成形体を、先に作製した積層体に積層し、露点+25℃の窒素水素混合雰囲気にて脱脂を行った後、引き続き、露点+25℃の窒素水素混合雰囲気にて1300℃の最高温度で2時間焼成した。   Then, a molded body that becomes a reflective part in which a hole having an inner diameter of 3.0 mm is formed after firing is laminated on the previously produced laminated body after firing, in a nitrogen-hydrogen mixed atmosphere of dew point + 25 ° C. After degreasing, it was subsequently fired for 2 hours at a maximum temperature of 1300 ° C. in a nitrogen-hydrogen mixed atmosphere with a dew point of + 25 ° C.

実施例および比較例の試料には、焼成後に、Ni、AuおよびAgめっきを順次施した。   The samples of Examples and Comparative Examples were sequentially subjected to Ni, Au, and Ag plating after firing.

これらの発光素子用配線基板に接着剤として厚みが10μmのAu−Snを用いて出力1.5Wの発光素子である1mm角のLED素子を搭載部に実装し、ボンディングワイヤによりLED素子と接続端子とを結線し、さらに、LED素子と接続端子とをエポキシ樹脂からなるモールド材で覆い、発光装置を得た。   A 1 mm square LED element, which is a light emitting element having an output of 1.5 W, is mounted on the mounting portion using Au-Sn having a thickness of 10 μm as an adhesive on the wiring board for the light emitting element, and the LED element and the connection terminal are connected by a bonding wire. And the LED element and the connection terminal were covered with a molding material made of epoxy resin to obtain a light emitting device.

得られた発光装置に0.4Aの電流を通電し、全放射束測定を行った。   A current of 0.4 A was applied to the obtained light emitting device, and total radiant flux measurement was performed.

また、金属基体および絶縁基体の熱伝導率は、それぞれを個別に形成した試料を用いてレーザーフラッシュ法により測定した。   Further, the thermal conductivity of the metal substrate and the insulating substrate was measured by a laser flash method using samples formed individually.

以上の工程により作製した発光素子用配線基板の特性と、試験結果を表1に示す。

Figure 2008108970
Table 1 shows the characteristics and test results of the wiring board for a light-emitting element manufactured through the above steps.
Figure 2008108970

表1に示すように、本発明の発光素子用配線基板は、本発明の範囲外である絶縁層を設けなかった試料No.2に比べ、わずかに全放射束は小さくなるものの、本発明の範囲外であるアルミナを主体とする試料No.1に比べると十分に高い全放射束を示すことがわかる。また、本発明の発光素子用配線基板は、絶縁層を設けなかった試料No.2に比べ、めっきが形成された面積が約半分となり、めっき工程での貴金属の使用量を節約することができた。また、発光素子用配線基板の下面における導電体が占める面積は、試料No.2の約1/5であり、外部接続基板に形成された配線との電気的な短絡の発生のおそれが小さくなった。   As shown in Table 1, the wiring board for a light emitting element of the present invention has a sample No. in which an insulating layer outside the scope of the present invention is not provided. Although the total radiant flux is slightly smaller than that of Sample 2, sample No. 2 mainly composed of alumina, which is outside the scope of the present invention. It can be seen that the total radiant flux is sufficiently high compared to 1. In addition, the wiring board for a light emitting element of the present invention has a sample No. in which no insulating layer is provided. Compared to 2, the area where the plating was formed was reduced to about half, and the amount of noble metal used in the plating process could be saved. Further, the area occupied by the conductor on the lower surface of the light emitting element wiring board is the sample No. This is about 1/5 of 2, and the possibility of an electrical short circuit with the wiring formed on the external connection substrate is reduced.

本発明の発光素子用配線基板の断面図である。It is sectional drawing of the wiring board for light emitting elements of this invention. 本発明の発光装置の断面図である。It is sectional drawing of the light-emitting device of this invention. 本発明の発光素子用配線基板の製造方法を説明するための要部拡大断面図である。It is a principal part expanded sectional view for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の製造方法を説明するための要部拡大断面図である。It is a principal part expanded sectional view for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の製造方法を説明するための要部拡大断面図である。It is a principal part expanded sectional view for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の製造方法を説明するための要部拡大断面図である。It is a principal part expanded sectional view for demonstrating the manufacturing method of the wiring board for light emitting elements of this invention.

符号の説明Explanation of symbols

1・・・金属基体
1a・・・金属基体の上面
1b・・・発光素子配線基板の逆側の主面
3・・・搭載部
5・・・絶縁層
7・・・貫通絶縁体
9・・・貫通導体
11・・・配線
13・・・反射部
13a・・・反射部の内壁面
13b・・・反射部の上面
15・・・発光素子用配線基板
17・・・外部接続端子
19・・・非金属の被覆膜
21・・・被覆絶縁層
23・・・発光素子
31・・・発光装置
DESCRIPTION OF SYMBOLS 1 ... Metal base | substrate 1a ... Upper surface 1b of metal base | substrate ... Main surface 3 of the reverse side of a light emitting element wiring board ... Mounting part 5 ... Insulating layer 7 ... Through insulator 9 ... Through conductor 11... Wiring 13... Reflecting portion 13 a... Inner wall surface 13 b of reflecting portion. Non-metallic coating film 21 ... covering insulating layer 23 ... light emitting element 31 ... light emitting device

Claims (4)

焼結金属からなる平板状の金属基体と、該金属基体の上面に形成された発光素子を搭載する搭載部と、前記金属基体よりも薄く前記金属基体の下面を覆ったセラミックスからなる絶縁層と、少なくとも前記金属基体を貫通するセラミックスからなる貫通絶縁体と、前記金属基体と電気的に絶縁されるとともに前記貫通絶縁体の内側を貫通する貫通導体と、前記貫通導体と電気的に接続されるとともに前記金属基体と絶縁され前記搭載部の周囲に設けられた配線と、前記貫通導体と電気的に接続されるとともに前記金属基体と絶縁され前記絶縁層を貫通する外部接続端子と、前記搭載部と前記配線とを取り囲むように形成された焼結金属からなる反射部とを備え、前記金属基体と前記絶縁層と前記貫通絶縁体と前記貫通導体と前記配線と前記外部接続端子と前記反射部とが同時焼成されてなり、前記金属基体にめっきが施されていることを特徴とする発光素子用配線基板。 A flat metal substrate made of sintered metal, a mounting portion for mounting a light emitting element formed on the upper surface of the metal substrate, an insulating layer made of ceramics that is thinner than the metal substrate and covers the lower surface of the metal substrate; A through insulator made of ceramic that penetrates at least the metal substrate; a through conductor that is electrically insulated from the metal substrate and penetrates the inside of the through insulator; and is electrically connected to the through conductor. In addition, a wiring that is insulated from the metal base and provided around the mounting portion, an external connection terminal that is electrically connected to the through conductor and is insulated from the metal base and penetrates the insulating layer, and the mounting portion And a reflecting portion made of sintered metal so as to surround the wiring, the metal base, the insulating layer, the through insulator, the through conductor, the wiring, and the outer Connecting terminal and the reflective portion is being fired simultaneously, the wiring substrate for light-emitting element, characterized in that plating on the metal substrate is applied. 前記反射部の上面に、非金属の被覆膜が形成されていることを特徴とする請求項1に記載の発光素子用配線基板。 The light-emitting element wiring board according to claim 1, wherein a non-metallic coating film is formed on an upper surface of the reflecting portion. 前記被覆膜がセラミックスからなるとともに、前記金属基体と前記絶縁層と前記貫通絶縁体と前記貫通導体と前記配線と前記外部接続端子と前記反射部と前記被覆膜とが同時焼成されてなることを特徴とする請求項2に記載の発光素子用配線基板。 The coating film is made of ceramic, and the metal base, the insulating layer, the through insulator, the through conductor, the wiring, the external connection terminal, the reflection portion, and the coating film are fired simultaneously. The light-emitting element wiring board according to claim 2. 請求項1乃至3のいずれかに記載の発光素子用配線基板の前記搭載部に発光素子を搭載していることを特徴とする発光装置。

A light emitting device comprising a light emitting element mounted on the mounting portion of the light emitting element wiring board according to claim 1.

JP2006291551A 2006-10-26 2006-10-26 Wiring substrate for luminous element, and luminous apparatus Pending JP2008108970A (en)

Priority Applications (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009128541A1 (en) 2008-04-18 2009-10-22 三菱レイヨン株式会社 Production system and production method of carbon fiber thread
KR20190087249A (en) * 2018-01-16 2019-07-24 엘지이노텍 주식회사 Light emitting device package and light source unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009128541A1 (en) 2008-04-18 2009-10-22 三菱レイヨン株式会社 Production system and production method of carbon fiber thread
KR20190087249A (en) * 2018-01-16 2019-07-24 엘지이노텍 주식회사 Light emitting device package and light source unit
KR102550291B1 (en) 2018-01-16 2023-07-03 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package and light source unit

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