JP2008103583A - Semiconductor device, electronic device, and manufacturing method and inspecting method of electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device whereby a highly reliable electronic device can be manufactured efficiently, the highly reliable electronic device, an inspecting method of the electronic device, and a method whereby the highly reliable electronic device is manufactured efficiently. <P>SOLUTION: The manufacturing method of the electronic device includes a process of preparing a semiconductor device 1 having a semiconductor chip 10 whereon electrodes 12 are formed, and having resin protrusions 20 at least having a convex curved surface as its upper end surface, and further, having conductive layers (wirings 30) each of which covers at least a portion of the upper end surface of each resin protrusion, a process of preparing a wiring substrate 50 having a light transmitting substrate 52, and having wiring patterns 54 formed on the light transmitting substrate, and a process of so mounting the semiconductor device 1 on the wiring substrate 50 as to crush the resin protrusions 20 by the semiconductor chip 10 and the wiring substrate 50. In the process of mounting the semiconductor device on the wiring substrate, the interval between the wiring substrate 50 and the semiconductor chip 10 is controlled, based on the light reflected by the semiconductor device 1 and transmitted through the wiring substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device, an electronic device, an electronic device manufacturing method, and an electronic device inspection method.

  In order to reduce the size of the electronic device, the outer shape of the semiconductor device is preferably small. However, as the roles of semiconductor devices have diversified, the integration of integrated circuits formed on semiconductor chips has progressed, and accordingly, the number of pins of semiconductor chips has increased. That is, at present, development of a semiconductor device capable of simultaneously satisfying the demands of miniaturization of a semiconductor device, high integration of an integrated circuit, and an increase in electrodes is in progress.

As a semiconductor device that can meet this demand, a semiconductor device of a type in which wiring is formed on a semiconductor chip has attracted attention. In this type of semiconductor device, the outer shape of the semiconductor device can be made substantially the same as the outer shape of the semiconductor chip, so that the semiconductor device can be downsized.
JP-A-2-272737

  If a semiconductor device is miniaturized and highly integrated, it becomes difficult to mount it on a wiring board or the like. However, in order to ensure the reliability of the electronic device, it is important to maintain the reliability of the semiconductor device even after mounting. Moreover, in order to provide a highly reliable electronic device, it is preferable to perform a highly accurate inspection efficiently.

  An object of the present invention is to efficiently provide a semiconductor device, a highly reliable electronic device, an electronic device inspection method, and a highly reliable electronic device capable of efficiently manufacturing a highly reliable electronic device. It is to provide a method of manufacturing.

(1) An electronic device manufacturing method according to the present invention includes:
A semiconductor chip on which an electrode is formed; a resin protrusion formed on the surface of the semiconductor chip on which the electrode is formed; at least an upper end surface is a convex curved surface; and a conductive layer covering at least a part of the upper end surface; Providing a semiconductor device having:
Preparing a wiring board having a light-transmitting substrate and a wiring pattern formed on the light-transmitting substrate;
Mounting the semiconductor device on the wiring substrate, bringing the conductive layer into contact with the wiring substrate, and crushing the resin protrusion with the semiconductor chip and the wiring substrate;
Bonding the semiconductor device and the wiring board via an adhesive;
Including
In the step of mounting the semiconductor device on the wiring board,
The distance between the wiring substrate and the semiconductor chip is controlled based on the light reflected by the semiconductor device and transmitted through the wiring substrate.

  According to the present invention, the upper end surface of the resin protrusion formed on the semiconductor device is a convex curved surface. Therefore, when the semiconductor protrusion is crushed by the semiconductor chip and the wiring substrate in the step of mounting the semiconductor device on the wiring substrate, the resin protrusion is deformed, and the upper end surface of the resin protrusion becomes parallel to the wiring substrate. Here, as the crushing amount for crushing the resin protrusion increases, the area of the surface parallel to the wiring board on the upper end surface of the resin protrusion increases. That is, as the distance between the semiconductor chip and the wiring board becomes narrower, the area of the surface (surface facing the wiring board) parallel to the wiring board at the upper end surface of the resin protrusion increases.

  Since the wiring is formed so as to cover the upper end surface of the resin protrusion, the shape of the wiring changes according to the resin protrusion. That is, the smaller the distance between the semiconductor chip and the wiring board, the larger the area of the surface facing the wiring board (surface facing the wiring board) in the wiring.

  That is, according to the present invention, the luminance and intensity of light reflected by the semiconductor device and transmitted through the light-transmitting substrate (wiring substrate) change according to a change in the distance between the semiconductor device and the wiring substrate. Therefore, the distance between the semiconductor device and the wiring board can be controlled based on the light.

  In the present invention, the distance between the semiconductor device and the wiring substrate may be controlled based on the luminance of light reflected by the semiconductor device and transmitted through the light-transmitting substrate. Alternatively, the distance between the semiconductor device and the wiring board may be controlled based on the intensity, lightness, and saturation of the light. Alternatively, from the wiring substrate side (from the light-transmitting substrate side), the state of the semiconductor device is imaged to acquire an image, and the acquired image is analyzed to control the interval between the semiconductor device and the wiring substrate. Also good.

(2) In this electronic device manufacturing method,
In the step of mounting the semiconductor device on the wiring board,
An interval between the wiring board and the semiconductor chip may be controlled based on light reflected by the conductive layer and transmitted through the wiring board.

(3) In this electronic device manufacturing method,
The semiconductor device includes:
A resin member having a height lower than that of the resin protrusion;
A conductive member covering at least a part of the upper end surface of the resin member;
Further including
In the step of mounting the semiconductor device on the wiring board,
The wiring board may be mounted on the semiconductor chip so that the conductive member does not contact the wiring board.

(4) In this electronic device manufacturing method,
In the step of mounting the semiconductor device on the wiring board,
The conductive layer may be in contact with the wiring pattern.

(5) In this electronic device manufacturing method,
The conductive layer may be electrically connected to the electrode.

(6) In this electronic device manufacturing method,
In the step of mounting the semiconductor device on the wiring board,
The conductive layer may be in contact with the light transmissive substrate.

(7) An electronic device inspection method according to the present invention includes:
A method for inspecting the mounting state of an electronic device,
The electronic device is
A light transmissive substrate, and a wiring substrate having a wiring pattern formed on the light transmissive substrate;
A semiconductor chip on which an electrode is formed; a resin protrusion formed on a surface of the semiconductor chip on which the electrode is formed; and a conductive layer covering at least a part of an upper end surface of the resin protrusion. A semiconductor device mounted on the wiring board such that a layer contacts the wiring board;
An adhesive that bonds the semiconductor device and the wiring board;
Including
The mounting state of the semiconductor device is inspected based on the light reflected by the semiconductor device and transmitted through the wiring board.

  ADVANTAGE OF THE INVENTION According to this invention, the inspection method of an electronic device which can test | inspect the reliability of an electronic device easily can be provided.

(8) In this electronic device inspection method,
The mounting state of the semiconductor device may be inspected based on light reflected by the conductive layer and transmitted through the wiring board.

(9) An electronic device according to the present invention includes:
A light transmissive substrate, and a wiring substrate having a wiring pattern formed on the light transmissive substrate;
A semiconductor chip on which an electrode is formed; a resin protrusion formed on the surface of the semiconductor chip on which the electrode is formed; a conductive layer covering at least a part of the upper end surface of the resin protrusion; and a height higher than the resin protrusion. A low-cost resin member, and a conductive member that covers at least a part of the upper end surface of the resin member, and a semiconductor device mounted on the wiring board so that the conductive layer is in contact with the wiring board;
An adhesive that bonds the semiconductor device and the wiring board;
Including
The semiconductor device is mounted on the wiring board so that the conductive member does not contact the wiring board.

  ADVANTAGE OF THE INVENTION According to this invention, the electronic device which can perform a reliability test | inspection easily can be provided.

(10) A semiconductor device according to the present invention includes:
A semiconductor chip on which electrodes are formed;
A resin protrusion formed on the surface of the semiconductor chip on which the electrode is formed;
A wiring electrically connected to the electrode having an electrical connection disposed on the resin protrusion;
A first resin member having a height higher than the resin protrusion;
A first conductive member covering at least a part of an upper end surface of the first resin member;
A second resin member having a height lower than that of the resin protrusion;
A second conductive member covering at least a part of the upper end surface of the second resin member;
Have

  According to the present invention, it is possible to provide a semiconductor device that can be easily mounted on a wiring board and can efficiently manufacture a highly reliable electronic device.

(11) In this semiconductor device,
The upper end surface of the first resin member and the upper end surface of the second resin member may be convex curved surfaces.

  Embodiments to which the present invention is applied will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments. Moreover, this invention shall include what combined the following content freely.

1. Semiconductor Device Hereinafter, a semiconductor device 1 according to an embodiment to which the present invention is applied will be described. 1A to 4C are diagrams for describing the structure of the semiconductor device according to this embodiment and the method for manufacturing the semiconductor device.

(1) Configuration of Semiconductor Device The configuration of the semiconductor device 1 according to the embodiment to which the present invention is applied will be described below. FIG. 1A and FIG. 1B are diagrams for explaining the configuration of the semiconductor device 1. Here, FIG. 1A is a top view of the semiconductor device 1, and FIG. 1B is a partially enlarged view of a cross section taken along line IB-IB in FIG.

  As shown in FIGS. 1A and 1B, the semiconductor device according to the present embodiment includes a semiconductor chip 10 on which a plurality of electrodes 12 are formed. The semiconductor chip 10 may be a silicon substrate, for example. The outer shape of the surface 15 on which the electrode 12 is formed in the semiconductor chip 10 may be rectangular (rectangular or square) as shown in FIG. An integrated circuit 14 may be formed on the semiconductor chip 10 (see FIG. 1B). The configuration of the integrated circuit 14 is not particularly limited. For example, the integrated circuit 14 may include an active element such as a transistor and a passive element such as a resistor, a coil, and a capacitor.

  As shown in FIGS. 1A and 1B, an electrode 12 is formed on the semiconductor chip 10. The electrode 12 may be electrically connected to the inside of the semiconductor chip 10. The electrode 12 may be electrically connected to the integrated circuit 14. Alternatively, a conductor (conductive pad) that is not electrically connected to the integrated circuit 14 may be referred to as the electrode 12. The electrode 12 may be a part of the internal wiring of the semiconductor chip 10. At this time, the electrode 12 may be a portion of the internal wiring of the semiconductor chip 10 that is used for electrical connection with the outside. The electrode 12 may be formed of a metal such as aluminum or copper.

The semiconductor chip 10 may have a passivation film 16 as shown in FIG. The passivation film 16 is formed so as to expose the electrode 12. An opening that exposes the electrode 12 may be formed in the passivation film 16. The passivation film 16 may be formed so as to partially cover the electrode 12. The passivation film 16 may be formed so as to cover the periphery of the electrode 12 as shown in FIG. The passivation film may be, for example, an inorganic insulating film such as SiO ₂ or SiN. Alternatively, the passivation film 16 may be an organic insulating film such as a polyimide resin.

  As shown in FIGS. 1A and 1B, the semiconductor device according to the present embodiment includes a resin protrusion 20. The resin protrusion 20 is formed on the surface 15 of the semiconductor chip 10. The resin protrusion 20 may be formed on the passivation film 16 as shown in FIG.

  At least the upper end surface of the resin protrusion 20 is a convex curved surface. In the resin protrusion 20, at least a region above a second resin member 44 described later (a region protruding from the second resin member 44) may be a convex curved surface.

  The outer shape (the shape of the bottom surface) of the resin protrusion 20 is not particularly limited. When the outer shape of the surface 15 is rectangular, the resin protrusion 20 may have a shape extending in parallel with any side of the surface 15. For example, when the outer shape of the surface 15 is a rectangle, the resin protrusion 20 may have a shape extending along the long side of the rectangle. In this case, the resin protrusion 20 may be arranged in the peripheral region of the long side. Alternatively, the resin protrusion 20 may be circular in the top view. In this case, the resin protrusion 20 may have a hemispherical shape. Note that the hemispherical here includes not only a strict hemispherical shape but also a similar shape.

  In addition, the material of the resin protrusion 20 is not particularly limited, and any material that is already known may be applied. For example, the resin protrusion 20 is made of polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, acrylic resin, phenol resin, silicone resin, modified polyimide resin, benzocyclobutene (BCB), polybenzoxazole (PBO). Polybenzoxazole) or other resin.

  The semiconductor device according to this embodiment includes a wiring 30 as shown in FIGS. The wiring 30 is electrically connected to the electrode 12. The wiring 30 includes an electrical connection portion 32 disposed on the resin protrusion 20. That is, a region of the wiring 30 that is disposed on the resin protrusion 20 (on the upper end surface of the resin protrusion 20) may be referred to as an electrical connection portion 32. The electrical connection portion 32 is a portion of the wiring 30 that is used for electrical connection with a conductive portion (such as a wiring pattern on a wiring board) of another electronic component. In the present embodiment, a region above the second resin member 44 described later (region protruding from the second resin member 44) in the wiring 30 may be referred to as the electrical connection portion 32. . In the present embodiment, the upper end surface of the resin protrusion 20 has a convex curved surface. Therefore, the electrical connection portion 32 also has a convex curved surface shape.

  The material applicable to the wiring 30 is not particularly limited. The wiring 30 may be made of, for example, Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiV, lead-free solder, or the like. Further, the structure of the wiring 30 is not particularly limited. For example, the wiring 30 may be formed of a plurality of layers. At this time, the wiring 30 may include a first layer formed of titanium tungsten and a second layer formed of gold (not shown). Alternatively, the wiring 30 may be formed of a single layer. The wiring 30 may be formed so as to be in contact with the passivation film 16. The wiring 30 may be formed so as to reach the passivation film 16 from the electrode 12 over the resin protrusion 20. That is, the wiring 30 may be formed on both sides of the resin protrusion 20 so as to be in contact with the passivation film 16 (surface 15).

  The semiconductor device according to the present embodiment includes a first resin member 42 as shown in FIGS. 1 (A) and 1 (B). The first resin member 42 is higher than the resin protrusion 20. Specifically, the height h1 of the first resin member 42 may be higher than the height h of the region overlapping the wiring 30 (electrical connection portion 32) in the resin protrusion 20 (FIG. 1B )reference). The height of the first resin member 42 referred to here may be the size of the first resin member 42 in the thickness direction of the semiconductor chip 10 (direction orthogonal to the surface 15). The height of the first resin member 42 may be, for example, the height from the surface 15 of the semiconductor chip 10 (the surface of the passivation film 16). The upper end surface of the first resin member 42 may be a convex curved surface. Further, the outer shape (the outer shape of the bottom surface) of the first resin member 42 is not particularly limited. The outer shape of the bottom surface of the first resin member 42 may be rectangular or circular. For example, the first resin member 42 may have a semicircular shape.

  The first resin member 42 may be disposed avoiding the integrated circuit 14 (so as not to overlap with the integrated circuit 14). According to this, it is possible to prevent a large pressure from being applied to the integrated circuit 14 in the process of mounting the semiconductor device 1 to be described later on the wiring board 50, and thus prevent the characteristics of the integrated circuit 14 from changing. can do. For example, the first resin member 42 may be disposed outside the formation region of the integrated circuit 14. However, the first resin member 42 may be disposed on the formation region of the integrated circuit 14 (so as to overlap the integrated circuit 14). The first resin member 42 may also be disposed in a region outside the region where the electrode 12 (resin protrusion 20) is formed. However, the first resin member 42 may be disposed in a region inside the region where the electrode 12 is formed.

  The first resin member 42 may be disposed at the four corners of the rectangular surface 15 as shown in FIG. For example, one first resin member 42 may be formed in the peripheral region of each corner of the surface 15. At this time, the semiconductor device may include four first resin members 42. Thereby, the semiconductor device 1 and the wiring board can be kept parallel in the process of mounting the semiconductor device 1 on the wiring board or the like. However, the present invention is not limited to this. For example, the semiconductor device may have only one first resin member 42. Alternatively, the semiconductor device may have two, three, or five or more first resin members 42. In addition, when the several 1st resin member 42 is formed, each 1st resin member 42 may be formed in the same height.

  As shown in FIGS. 1A and 1B, the semiconductor device according to the present embodiment includes a first conductive member 43 that covers at least the upper end surface of the first resin member 42. The first conductive member 43 may be electrically connected to the electrode 12 or may not be electrically connected to the electrode 12.

  The semiconductor device according to the present embodiment includes a second resin member 44 as shown in FIGS. 1 (A) and 1 (B). The second resin member 44 is lower in height than the resin protrusion 20. The height h2 of the second resin member 44 may be lower than the height h of the region overlapping the wiring 30 (electrical connection portion 32) in the resin protrusion 20 (see FIG. 1B). . The formation region of the second resin member 44 is not particularly limited. The second resin member 44 may be disposed so as to overlap with the integrated circuit 14, but may be disposed so as not to overlap with the integrated circuit 14. The second resin member 44 may be disposed inside the formation region of the electrode 12 or the resin protrusion 20, but may be disposed outside.

  As shown in FIGS. 1A and 1B, the semiconductor device according to the present embodiment includes a second conductive member 45 that covers at least the upper end surface of the second resin member 44. The second conductive member 45 is a conductive member that is not electrically connected to the electrode 12. However, as a modification, the second conductive member 45 may be electrically connected to the electrode 12.

  The material of the first and second resin members 42 and 44 is not particularly limited, but the same material as the resin protrusion 20 may be used. However, the first and second resin members 42 and 44 may be formed of a material different from that of the resin protrusion 20. The first and second conductive members 43 and 45 may be made of the same material as the wiring 30. However, the first and second resin members 43 and 45 may be made of a material different from that of the wiring 30.

  In the present invention, the wiring 30 (electrical connection portion 32) and the first resin member 42 may be collectively referred to as a conductive layer.

  The semiconductor device 1 according to the present embodiment may have the above configuration. Note that the operational effects of the semiconductor device 1 will be described later.

(2) Manufacturing Method of Semiconductor Device Hereinafter, a manufacturing method of the semiconductor device 1 according to the present embodiment will be described. 2A to 4C are views for explaining a method of manufacturing the semiconductor device 1.

  The method for manufacturing a semiconductor device according to this embodiment includes preparing a semiconductor substrate 11 shown in FIGS. 2 (A) and 2 (B). Here, FIG. 2A is a schematic view of the semiconductor substrate 11, and FIG. 2B is a partially enlarged view of a cross-sectional view of the semiconductor substrate 11.

  As shown in FIG. 2A, the semiconductor substrate 11 has a wafer shape. The wafer-like semiconductor substrate 11 has a region 100 to be a plurality of semiconductor chips (semiconductor chips 10). However, a semiconductor chip (see FIG. 1A) may be prepared as a semiconductor substrate and the following steps may be performed.

  An electrode 12 is formed on the semiconductor substrate 11 as shown in FIG. The semiconductor substrate 11 may have a passivation film 16 that exposes the electrode 12.

  The manufacturing method of the semiconductor device according to the present embodiment includes forming the resin protrusion 20 and the first and second resin members 42 and 44 as shown in FIGS. . In addition, although this embodiment demonstrates the method to form the resin protrusion 20 and the 1st and 2nd resin members 42 and 44 simultaneously, this invention is not limited to this. FIGS. 3A to 3C are views for explaining an example of a process for forming the resin protrusion 20 and the first and second resin members 42 and 44.

  First, as shown in FIG. 3A, a resin material 25 is provided on the semiconductor substrate 11. Thereafter, as shown in FIG. 3B, a part of the resin material 25 is removed and the resin material 25 is patterned. Thereafter, the resin protrusion 25 and the first and second resin members 42 and 44 may be formed by curing (for example, thermosetting) the patterned resin material 25 as shown in FIG. . In addition, the resin protrusion 25 and the 1st and 2nd resin members 42 and 44 can be formed so that an upper end surface may become a convex curve by hardening after making the resin material 25 once fuse | melt. Further, by adjusting the curing conditions (heating temperature and heating time) of the resin material 25, the shape of the convex curved surface can be controlled.

  In the present embodiment, the resin material 25 may be patterned so that the width of the portion that becomes the first resin member 42 is wider than the width of the portion that becomes the resin protrusion 20 (FIG. 3B). And FIG. 3 (C)). Thereby, the first resin member 42 can be formed to be higher than the resin protrusion 20. Further, the resin material 25 may be patterned so that the width of the portion to be the second resin member 44 is narrower than the width of the portion to be the resin protrusion 20 (FIGS. 3B and 3C). )reference). As a result, the second resin member 44 can be formed to be lower than the resin protrusion 20.

  The method for manufacturing a semiconductor device according to the present embodiment includes forming the wiring 30 and the first and second conductive members 43 and 45 as shown in FIGS. 4 (A) to 4 (C). In the present embodiment, a method of forming the wiring 30 and the first and second conductive members 43 and 45 at the same time will be described, but the present invention is not limited to this. FIGS. 4A to 4C are diagrams for explaining an example of a process of forming the wiring 30 and the first and second conductive members 43 and 45.

  This step includes forming a metal layer 35 as shown in FIG. The metal layer 35 may be formed so as to cover the electrode 12, the passivation film 16, the resin protrusion 20, and the first and second resin members 42 and 44. The metal layer 35 can be formed by sputtering, for example. The metal layer 35 may be a single metal layer or a plurality of metal layers.

  Then, as shown in FIG. 4B, a mask 37 is formed on the metal layer 35. The mask 37 may be patterned so as to cover only a region of the metal layer 35 that becomes the wiring 30.

  Then, as shown in FIG. 4C, by removing the exposed region from the mask 37 in the metal layer 35, the wiring 30, the first and second conductive members 43, 45 can be formed.

  However, the method of forming the wiring 30 and the first and second conductive members 43 and 45 is not limited to this, and any known method may be applied. The wiring 30 and the first and second conductive members 43 and 45 may be formed by applying, for example, an inkjet method or a plating method.

  Then, the semiconductor device 1 shown in FIGS. 1A and 1B is manufactured through a process of removing the mask 37, a process of cutting the semiconductor substrate 11 into individual pieces, an inspection process, and the like. Can do.

2. Hereinafter, an electronic device 2 according to an embodiment to which the present invention is applied will be described. 5-11 is a figure for demonstrating the electronic device 2 which concerns on embodiment to which this invention is applied.

(1) Manufacturing Method of Electronic Device Hereinafter, a manufacturing method of the electronic device 2 according to the embodiment to which the present invention is applied will be described. 5 to 6D are diagrams for explaining a method of manufacturing an electronic device according to an embodiment to which the present invention is applied.

  The electronic device manufacturing method according to the present embodiment includes preparing the semiconductor device 1. The semiconductor device 1 has one of the configurations described above.

  The method for manufacturing an electronic device according to the present embodiment includes preparing a wiring board 50. Hereinafter, the configuration of the wiring board 50 will be described.

  The wiring substrate 50 includes a light transmissive substrate 52 and a wiring pattern 54. The light transmissive substrate 52 (wiring substrate 50) may be a part of an electro-optical panel (liquid crystal panel, electroluminescence panel, etc.). At this time, the light transmissive substrate 52 may be, for example, a glass substrate or a transparent resin substrate. The material of the wiring pattern 54 is not particularly limited. For example, the wiring pattern 54 is formed of a metal film such as ITO (Indium Tin Oxide), Cr, or Al, a metal compound film, or a composite film thereof. Also good. The wiring pattern 54 may be a transparent wiring. The wiring pattern 54 may be electrically connected to an electrode (scanning electrode, signal electrode, counter electrode, etc.) that drives the liquid crystal. However, the wiring substrate 50 may be a resin substrate.

  The electronic device manufacturing method according to the present embodiment includes a step of mounting the semiconductor device 1 on the wiring board 50. Hereinafter, this process will be described with reference to the drawings.

  First, as shown in FIG. 5, the semiconductor device 1 and the wiring substrate 50 are opposed to each other with an interval therebetween. Here, the semiconductor device 1 is arranged so that the surface 15 of the semiconductor chip 10 faces the wiring substrate 50. In addition, the semiconductor device 1 and the wiring substrate 50 are aligned so that the electrical connection portion 32 (resin protrusion 20) of the semiconductor device 1 and the wiring pattern 54 of the wiring substrate 50 face (overlap).

  In this step, as shown in FIG. 5, even if the semiconductor device 1 is held by the bonding tool 210 and the wiring substrate 50 is supported by the bonding stage 220, the semiconductor device 1 and the wiring substrate 50 may be aligned. Good. At this time, the semiconductor device 1 may be held such that the surface 15 is parallel to the wiring substrate 50. The bonding tool 210 and / or the bonding stage 220 may include a heater. Thereby, since the electrical connection part 32 and the wiring pattern 54 can be heated, the electrical connection part 32 and the wiring pattern 54 can be electrically connected reliably. However, the heater may be disposed outside the bonding tool 210 or the bonding stage 220.

  Note that an adhesive material 72 may be provided in advance between the semiconductor device 1 and the wiring board 50 as shown in FIG. The adhesive material 72 may be provided in a paste form or a film form. The adhesive material 72 may be an insulating material (NCP, NCF) that does not contain conductive particles or the like. For example, the adhesive material 72 may be provided on the wiring board 50.

  Thereafter, the bonding tool 210 (semiconductor device 1) is pushed down by the actuator 212, the semiconductor device 1 and the wiring board 50 are brought close to each other, the electrical connection portion 32 and the wiring pattern 54 are brought into contact, and the two are electrically connected. To do. In this step, first, as shown in FIG. 6A, the first conductive material 43 is brought into contact with the wiring board 50. Then, by bringing the semiconductor device 1 and the wiring board 50 closer to each other, the electrical connection portion 32 is brought into contact with the wiring pattern 54 as shown in FIG. Then, the semiconductor device 1 and the wiring substrate 50 are brought closer to each other, and the resin protrusion 20 is crushed by the semiconductor chip 10 and the wiring substrate 50 as shown in FIG. As a result, the upper end surface (electrical connection portion 32) of the resin protrusion 20 is deformed so as to be parallel to (opposed to) the wiring substrate 50 (wiring pattern 54). In the present embodiment, the semiconductor device 1 may be mounted on the wiring board 50 so that the second resin protrusion 44 (second conductive member 45) does not contact the wiring board 50.

  In this step, the resin protrusion 20 is elastically deformed. According to this, since the electrical connection part 32 and the wiring pattern 54 can be pressed by the elastic force of the resin protrusion 20, an electronic device with high electrical connection reliability can be manufactured.

  In the present embodiment, the distance between the semiconductor device 1 (semiconductor chip 10) and the wiring substrate 50 is controlled based on the light reflected by the semiconductor device 1 and transmitted through the wiring substrate 50. For example, the semiconductor device 1 may be irradiated with light (light orthogonal to the wiring substrate 50) from the wiring substrate 50 side, and the distance between the semiconductor device 1 and the wiring substrate 50 may be controlled based on the reflected light. . In the present embodiment, for example, the distance between the semiconductor device 1 and the wiring substrate 50 may be controlled based on the luminance (or intensity) of the reflected light.

  As described above, the upper end surface of the resin protrusion 20 has a convex curved surface. When the resin protrusion 20 is pressed against the wiring substrate 50, the upper surface of the resin protrusion 20 is deformed in parallel to the wiring substrate 50 (see FIGS. 6B and 6C). Then, as the distance between the semiconductor device 1 (semiconductor chip 10) and the wiring substrate 50 is closer, the resin protrusion 20 is greatly deformed, and the area parallel (opposed) to the wiring substrate 50 is increased.

  In the present embodiment, the electrical connection portion 32 is disposed on the resin protrusion 20. Since the electrical connection portion 32 is deformed into the same shape as the upper surface of the resin protrusion 20, the closer the distance between the semiconductor device 1 (semiconductor chip 10) and the wiring substrate 50 is, the closer the wiring in the electrical connection portion 32 (wiring 30). The area of the portion parallel to the substrate 50 increases. As the area of the portion of the electrical connection portion 32 parallel to the wiring substrate 50 increases, the area of the light reflecting surface (reflecting surface) increases, and the luminance (intensity) of the light transmitted through the wiring substrate 50 increases. Become stronger. That is, the brightness (intensity) of the reflected light increases as the semiconductor device 1 and the wiring board 50 come closer. In other words, the distance between the semiconductor device 1 and the wiring board 50 and the brightness of the reflected light are related. Therefore, it is possible to determine and control the interval between the semiconductor device 1 and the wiring board 50 based on the brightness of the reflected light.

  As described above, the wiring 30 (electrical connection portion 32) of the semiconductor device 1 is pressed against the wiring pattern 54 by the elastic force of the resin protrusion 20 and is electrically connected to the wiring pattern 54. In order to increase the reliability of the electronic device, it is preferable to press the electrical connection portion 32 and the wiring pattern 54 with an appropriate force. That is, if the elastic force of the resin protrusion 20 can be controlled to a desired value, a highly reliable electronic device can be manufactured. The elastic force of the resin protrusion 20 is determined by the distance between the semiconductor device 1 (semiconductor chip 10) and the wiring board 50. Therefore, if the distance between the semiconductor device 1 and the wiring board 50 can be controlled, the reliability is high. Electronic devices can be manufactured.

  And according to this invention, since the space | interval of the semiconductor device 1 and the wiring board 50 can be easily controlled based on the reflected light from the semiconductor device 1, a highly reliable electronic device is manufactured efficiently. Is possible.

  In the present embodiment, when the brightness of the reflected light from the semiconductor device 1 reaches a predetermined value, it may be determined that the distance between the semiconductor device 1 and the wiring board 50 is a designed value. For example, when the sum of the luminances of reflected light reflected from the entire surface of the semiconductor device 1 reaches a predetermined value, it may be determined that the distance between the semiconductor device 1 and the wiring substrate 50 is a designed value. . Alternatively, when the brightness of reflected light reflected from a specific region of the semiconductor device 1 reaches a predetermined value, it may be determined that the distance between the semiconductor device 1 and the wiring substrate 50 is a designed value. . For example, the distance between the semiconductor device 1 and the wiring board 50 may be determined based on the brightness of reflected light reflected by the first conductive member 43. Alternatively, the interval between the semiconductor device 1 and the wiring board 50 may be determined based on the brightness of the reflected light reflected by the electrical connection portion 32.

  In the electronic device manufacturing method according to the present embodiment, not only the distance between the semiconductor device 1 and the wiring substrate 50 but also whether the semiconductor device 1 and the wiring substrate 50 are parallel or not is determined. Good. For example, a difference in luminance at both ends of the semiconductor device 1 (or four corners of the semiconductor device 1) is detected, and the operation of the bonding tool 210 (actuator 212) is controlled so that the difference in luminance is smaller than a predetermined value. May be.

  In this step, the adhesive material 72 may be caused to flow by the semiconductor device 1 and the wiring substrate 50. Thereby, the adhesive material 72 may be filled between the semiconductor device 1 (semiconductor chip 10) and the wiring substrate 50 (see FIG. 6C). Then, as shown in FIG. 6D, an adhesive 70 is formed. The adhesive 70 can be formed by curing the adhesive material 72. The semiconductor device 1 and the wiring board 50 are bonded (fixed) with the adhesive 70. The distance between the semiconductor chip 10 and the wiring substrate 50 may be maintained by the adhesive 70. That is, the adhesive protrusion 70 may maintain the resin protrusion 20 in an elastically deformed state. For example, by forming the adhesive 70 in a state where the resin protrusion 20 is elastically deformed, the state where the resin protrusion 20 is elastically deformed can be maintained.

  Through the above steps, the electronic device 2 shown in FIG. 6D may be manufactured.

  FIG. 7 is a flowchart for explaining a procedure for manufacturing the electronic device 2 (a procedure for mounting the semiconductor device 1 on the wiring board 50).

  In this step, first, the luminance of light reflected by the semiconductor device 1 and transmitted through the wiring board 50 is measured (step S12). This step may be performed using, for example, the light receiving unit 230 described above.

  Next, it is determined whether or not the measured luminance matches a predetermined value (step S14).

  When the measured luminance does not match the predetermined value (No in step S14), the actuator 212 is controlled to adjust the distance between the semiconductor chip 10 and the wiring board 50 (step S16), and the luminance is increased. A measurement process is performed (step S12).

  If the measured luminance matches a predetermined value (Yes in step S14), a step of curing the adhesive material 72 while maintaining the distance between the semiconductor chip 10 and the wiring substrate 50 is performed (step S18). ).

  The electronic device 2 can be manufactured through the above steps.

(2) Electronic Device Manufacturing Apparatus Hereinafter, an electronic device manufacturing apparatus will be described.

  The electronic device manufacturing apparatus includes a bonding tool 210 as shown in FIG. The bonding tool 210 is a jig for holding the semiconductor device 1 and mounting the semiconductor device 1 on the wiring board 50.

  The electronic device manufacturing apparatus includes an actuator 212 that operates the bonding tool 210. The actuator 212 can control the distance between the semiconductor device 1 and the wiring board 50 by moving the bonding tool 210 in the vertical direction.

  The electronic device manufacturing apparatus includes a bonding stage 220 as shown in FIG. The bonding stage 220 is a support member that supports the wiring substrate 50 in the process of mounting the semiconductor device 1 on the wiring substrate 50. The bonding stage 220 has a structure in which light reflected by the semiconductor device 1 and transmitted through the wiring substrate 50 can be incident on a light receiving unit 230 described later. The bonding stage 220 may be a transparent support member, for example.

  The electronic device manufacturing apparatus may include a curing processing apparatus that cures the adhesive material 72 (not shown). The adhesive material 72 is cured by a curing processing apparatus to form the adhesive 70. The operation of the curing processing apparatus varies depending on the nature of the adhesive material 72. When the adhesive material 72 is a thermosetting material, the curing processing apparatus may be a heater.

  As shown in FIG. 5, the electronic device manufacturing apparatus includes a light receiving unit 230. The light receiving unit 230 has a function of detecting the luminance of light. The light receiving unit 230 may include a plurality of light receiving elements. Here, the light receiving element may be an optical element capable of measuring the luminance (intensity) of incident light by photoelectrically converting the incident light. The light receiving element may be constituted by, for example, a CCD or a CMOS sensor. The light receiving unit 230 may detect the luminance of the light reflected by the semiconductor device 1 and transmitted through the wiring board 50 (light transmissive substrate 52).

  The electronic device manufacturing apparatus includes an arithmetic processing unit 240 as shown in FIG. The arithmetic processing unit 240 includes a determination processing unit 242. The determination processing unit 242 performs processing for determining whether or not the luminance of light detected by the light receiving unit 230 satisfies a predetermined condition. The arithmetic processing unit 240 may also include a control signal generation processing unit 244 that generates a control signal for controlling the actuator 212 based on the luminance of light detected by the light receiving unit 230. Then, the actuator 212 may control the position of the bonding tool 210 based on the control signal and align the semiconductor device 1 and the wiring board 50. Further, the curing processing apparatus may perform the process of curing the adhesive material 72 based on the control signal to form the adhesive 70.

  In the electronic device manufacturing apparatus, the various processes described above (various processes of the arithmetic processing unit 240) may be realized using a computer. Here, the computer refers to a physical device (system) including a processor (processing unit: CPU or the like), a memory (storage unit), an input device, and an output device as basic components.

(3) About the inspection method of an electronic device Hereinafter, the inspection method of the electronic device which concerns on this Embodiment is demonstrated. FIG. 8 is a flowchart for explaining the inspection method of the electronic device.

  First, the luminance of light reflected by the semiconductor device 1 and transmitted through the wiring board 50 is measured (step S20). This step may be performed using, for example, the light receiving unit 230 described above.

  Next, it is determined whether or not the measured luminance is a value within a predetermined range (step S22). This step may be performed using the determination processing unit 242, for example.

  When the measured luminance is a value within a predetermined range (Yes in step S22), it is determined that the electronic device is a non-defective product (step S24). Conversely, when the measured luminance is a value outside the predetermined range (No in step S22), it is determined that the electronic device is a defective product (step S26).

  The electronic device inspection method may be realized by using the light receiving unit 230 and the determination processing unit 242 described above. That is, the electronic device inspection apparatus may include a light receiving unit 230 and a determination processing unit 242 (arithmetic processing unit 240).

(4) Configuration of Electronic Device The electronic device 2 has a wiring board 50. The wiring substrate 50 includes a light transmissive substrate 52 and a wiring pattern 54. The electronic device 2 includes a semiconductor device 1. According to the electronic device 2, the semiconductor device 1 is mounted on the wiring board 50. The semiconductor device 1 is mounted on the wiring board 50 so that the electrical connection portion 32 is in contact with the wiring pattern 54. The semiconductor device 1 is mounted on the wiring board 50 so that the first conductive member 43 contacts the wiring board 50. The semiconductor device 1 is mounted on the wiring board 50 so that the second conductive member 45 does not contact the wiring board 50. The electronic device 2 includes an adhesive 70 that bonds the semiconductor device 1 and the wiring substrate 50. The adhesive 70 bonds the semiconductor device 1 and the wiring board 50, and maintains the distance between them. In the electronic device 2, the wiring 30 and the first conductive member 43 may be collectively referred to as a conductive layer.

  The electronic device 2 may be a display device (panel module). In FIG. 9, the schematic of the electronic device 2 as a display device is shown. The display device may be, for example, a liquid crystal display device or an EL (Electrical Luminescence) display device. The semiconductor device 1 (semiconductor chip) may be a driver IC that controls the display device.

  10 and 11 show a notebook personal computer 1000 and a mobile phone 2000 as an example of an electronic apparatus having the electronic device 2.

3. As described above, according to this method for manufacturing an electronic device, the distance between the semiconductor device 1 (semiconductor chip 10) and the wiring substrate 50 can be easily controlled. Can be manufactured efficiently.

  In addition, the semiconductor device 1 includes a resin protrusion 20, a first resin member 42 having a height higher than that of the resin protrusion 20, and a second resin member 44 having a height lower than that of the resin protrusion 20. In the step of mounting the semiconductor device 1 on the wiring substrate 50, the first resin member 42 (first conductive member 43) is in contact with the wiring substrate 50 and the second resin member 44 (second The semiconductor device 1 is mounted on the wiring board 50 so that the conductive member 45) does not come into contact with the wiring board 50. According to the manufactured electronic device, the reliability can be easily determined based on the light reflected by the semiconductor device 1 and transmitted through the wiring board 50. Specifically, when the first conductive member 43 cannot be observed when the semiconductor device 1 is observed from the wiring substrate 50 side, or when the second conductive member 45 can be observed, the semiconductor device 1 and the wiring substrate 50 are observed. It is possible to determine that the interval between and does not satisfy the set value. That is, it is possible to provide an electronic device that can easily determine the mounting state of the semiconductor device 1. In particular, according to this semiconductor device, even if the wiring pattern 54 is configured to block light and the reflected light from the electrical connection portion 32 cannot be observed accurately, the reliability of the electronic device is improved. It becomes possible to judge.

  In addition, the semiconductor device 1 includes a first resin member 42 that is higher than the resin protrusion 20. According to this, it is possible to prevent the wiring 30 (electrical connection portion 32) formed on the resin protrusion 20 from being damaged when the semiconductor device 1 is transported or stored.

4). Modifications The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

  For example, in the manufacturing method of an electronic device, the semiconductor device 1 and the wiring substrate 50 are not based on the intensity of light, brightness, or saturation, but on the brightness of light reflected by the semiconductor device 1 and transmitted through the wiring substrate 50. The interval may be controlled.

  Or in the manufacturing method of an electronic device, you may control the space | interval of the semiconductor device 1 and the wiring board 50 by applying an image processing technique. At this time, the electronic device manufacturing apparatus may include an imaging unit (image acquisition unit) instead of the light receiving unit 230 or together with the light receiving unit 230. Then, the interval between the semiconductor device 1 and the wiring substrate 50 may be calculated based on the image acquired by the imaging unit, and the interval between the semiconductor device 1 and the wiring substrate 50 may be controlled.

  In this method of manufacturing an electronic device, a semiconductor device that does not have the first and second resin members 42 and 44 and the first and second conductive members 43 and 45 is mounted on the wiring board 50, and the electronic device May be manufactured. Even in this case, a highly reliable electronic device can be efficiently manufactured.

4A and 4B illustrate a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. The figure for demonstrating the manufacturing method of an electronic device. The figure for demonstrating the manufacturing method of an electronic device. The flowchart for demonstrating the manufacturing process of an electronic device. The flowchart figure for demonstrating the inspection method of an electronic device. The figure which shows the panel module as an example of an electronic device. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Electronic device, 10 ... Semiconductor chip, 11 ... Semiconductor substrate, 12 ... Electrode, 14 ... Integrated circuit, 16 ... Passivation film, 20 ... Resin protrusion, 25 ... Resin material, 30 ... Wiring, 32 ... Electrical connection part 35 ... Metal layer 37 ... Mask 42 ... First resin member 43 ... First conductive member 44 ... Second resin member 45 ... Second conductive member 50 ... Wiring board 52 ... Light-transmitting substrate, 54 ... Wiring pattern, 70 ... Adhesive, 72 ... Adhesive material, 100 ... Area, 210 ... Bonding tool, 212 ... Actuator, 220 ... Bonding stage, 230 ... Light receiving unit, 240 ... Arithmetic processing Unit, 242 ... determination processing unit, 244 ... control signal generation processing unit

Claims (11)

A semiconductor chip on which an electrode is formed; a resin protrusion formed on the surface of the semiconductor chip on which the electrode is formed; at least an upper end surface is a convex curved surface; and a conductive layer covering at least a part of the upper end surface; Providing a semiconductor device having:
Preparing a wiring board having a light-transmitting substrate and a wiring pattern formed on the light-transmitting substrate;
Mounting the semiconductor device on the wiring substrate, bringing the conductive layer into contact with the wiring substrate, and crushing the resin protrusion with the semiconductor chip and the wiring substrate;
Bonding the semiconductor device and the wiring board via an adhesive;
Including
In the step of mounting the semiconductor device on the wiring board,
An electronic device manufacturing method for controlling an interval between the wiring board and the semiconductor chip based on light reflected by the semiconductor device and transmitted through the wiring board. In the manufacturing method of the electronic device of Claim 1,
In the step of mounting the semiconductor device on the wiring board,
An electronic device manufacturing method for controlling an interval between the wiring board and the semiconductor chip based on light reflected by the conductive layer and transmitted through the wiring board. In the manufacturing method of the electronic device of Claim 1 or Claim 2,
The semiconductor device includes:
A resin member having a height lower than that of the resin protrusion;
A conductive member covering at least a part of the upper end surface of the resin member;
Further including
In the step of mounting the semiconductor device on the wiring board,
A method for manufacturing an electronic device, wherein the wiring board is mounted on the semiconductor chip so that the conductive member does not contact the wiring board. In the manufacturing method of the electronic device in any one of Claims 1-3,
In the step of mounting the semiconductor device on the wiring board,
The manufacturing method of the electronic device which makes the said conductive layer contact the said wiring pattern. In the manufacturing method of the electronic device of Claim 4,
The method for manufacturing an electronic device in which the conductive layer is electrically connected to the electrode. In the manufacturing method of the electronic device in any one of Claims 1-3,
In the step of mounting the semiconductor device on the wiring board,
The manufacturing method of the electronic device which makes the said electroconductive layer contact the said transparent substrate. A method for inspecting an electronic device comprising:
The electronic device is
A light transmissive substrate, and a wiring substrate having a wiring pattern formed on the light transmissive substrate;
A semiconductor chip on which an electrode is formed; a resin protrusion formed on a surface of the semiconductor chip on which the electrode is formed; and a conductive layer covering at least a part of an upper end surface of the resin protrusion. A semiconductor device mounted on the wiring board such that a layer contacts the wiring board;
An adhesive that bonds the semiconductor device and the wiring board;
Including
An electronic device inspection method for inspecting a mounting state of the semiconductor device based on light reflected by the semiconductor device and transmitted through the wiring board. The electronic device inspection method according to claim 7,
An electronic device inspection method for inspecting a mounting state of the semiconductor device based on light reflected by the conductive layer and transmitted through the wiring board. A light transmissive substrate, and a wiring substrate having a wiring pattern formed on the light transmissive substrate;
A semiconductor chip on which an electrode is formed; a resin protrusion formed on the surface of the semiconductor chip on which the electrode is formed; a conductive layer covering at least a part of the upper end surface of the resin protrusion; and a height higher than the resin protrusion. A low-cost resin member, and a conductive member that covers at least a part of the upper end surface of the resin member, and a semiconductor device mounted on the wiring board so that the conductive layer is in contact with the wiring board;
An adhesive that bonds the semiconductor device and the wiring board;
Including
The semiconductor device is an electronic device mounted on the wiring board so that the conductive member does not contact the wiring board. A semiconductor chip on which electrodes are formed;
A resin protrusion formed on the surface of the semiconductor chip on which the electrode is formed;
A wiring electrically connected to the electrode having an electrical connection disposed on the resin protrusion;
A first resin member having a height higher than the resin protrusion;
A first conductive member covering at least a part of an upper end surface of the first resin member;
A second resin member having a height lower than that of the resin protrusion;
A second conductive member covering at least a part of the upper end surface of the second resin member;
A semiconductor device. The semiconductor device according to claim 10.
A semiconductor device in which an upper end surface of the first resin member and an upper end surface of the second resin member are convex curved surfaces.

Images