JP2008091901A - 磁区壁移動を利用したメモリ装置 - Google Patents
磁区壁移動を利用したメモリ装置 Download PDFInfo
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- JP2008091901A JP2008091901A JP2007239834A JP2007239834A JP2008091901A JP 2008091901 A JP2008091901 A JP 2008091901A JP 2007239834 A JP2007239834 A JP 2007239834A JP 2007239834 A JP2007239834 A JP 2007239834A JP 2008091901 A JP2008091901 A JP 2008091901A
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- memory device
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- domain wall
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- 230000005381 magnetic domain Effects 0.000 claims description 106
- 239000000696 magnetic material Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 229910003321 CoFe Inorganic materials 0.000 claims description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910018979 CoPt Inorganic materials 0.000 claims description 3
- 229910005335 FePt Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 36
- 230000005415 magnetization Effects 0.000 description 24
- 238000010586 diagram Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/012—Recording on, or reproducing or erasing from, magnetic disks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/933—Spintronics or quantum computing
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
【解決手段】磁区壁移動を利用したメモリ装置において、磁性物質からなり、磁壁を含み、第1方向に形成された書き込み用トラック61と、第1トラック上に形成された中間層62と、中間層上に第2方向に形成され、磁性物質からなり、磁壁を含む情報保存用トラック63と、を備える磁区壁移動を利用したメモリ装置である。
【選択図】図6H
Description
図1Bを参照すれば、第2磁区12から第1磁区11方向に外部から磁場を加えれば、磁区壁13は、第2磁区12から第1磁区11方向、すなわち、外部磁場の印加方向と同じ方向に移動するということが分かる。同じ原理で、第1磁区11から第2磁区12方向に磁場を印加する場合、磁区壁13は、第1磁区11から第2磁区12方向に移動する。
12 第2磁区
13 磁区壁
21,31,41,51,61 第1トラック
22,32,42,52a,52b,52c,62 中間層
23,33,43,53,63 第2トラック
Claims (11)
- 磁区壁移動を利用したメモリ装置において、
磁性物質を含み、第1方向に形成された第1トラックと、
前記第1トラック上に形成された中間層と、
前記中間層上に第2方向に形成され、磁性物質を含む第2トラックと、を備えることを特徴とする磁区壁移動を利用したメモリ装置。 - 前記第1方向及び前記第2方向は、相互平行、直交または交差する方向であることを特徴とする請求項1に記載の磁区壁移動を利用したメモリ装置。
- 前記第1トラック及び前記第2トラックは、多層構造に形成されたことを特徴とする請求項1に記載の磁区壁移動を利用したメモリ装置。
- 前記第1トラック及び前記第2トラックは、105J/m3ないし107J/m3の磁気異方性定数値を有する磁性物質で形成されたことを特徴とする請求項1ないし3のうち何れか1項に記載の磁区壁移動を利用したメモリ装置。
- 前記第1トラック及び前記第2トラックは、垂直磁気異方性を有する物質で形成されたことを特徴とする請求項1ないし3のうち何れか1項に記載の磁区壁移動を利用したメモリ装置。
- 前記第1トラック及び前記第2トラックは、CoPtまたはFePtのうち少なくとも何れか一物質を含んで形成されたことを特徴とする請求項1ないし3のうち何れか1項に記載の磁区壁移動を利用したメモリ装置。
- 前記第1トラック及び前記第2トラックは、1ないし100nmの厚さに形成されたことを特徴とする請求項1ないし3のうち何れか1項に記載の磁区壁移動を利用したメモリ装置。
- 前記中間層は、多層構造に形成されたことを特徴とする請求項1ないし3のうち何れか1項に記載の磁区壁移動を利用したメモリ装置。
- 前記中間層は、102ないし103J/m3の磁気異方性定数を有する磁性物質で形成されたことを特徴とする請求項1ないし3のうち何れか1項に記載の磁区壁移動を利用したメモリ装置。
- 前記中間層は、10ないし100nmの厚さに形成されたことを特徴とする請求項1ないし3のうち何れか1項に記載の磁区壁移動を利用したメモリ装置。
- 前記中間層は、NiFe、CoFe、Ni、Fe、Coまたはこれらのうち少なくとも何れか一物質を含む合金物質で形成されたことを特徴とする請求項1ないし3のうち何れか1項に記載の磁区壁移動を利用したメモリ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060089651A KR100790885B1 (ko) | 2006-09-15 | 2006-09-15 | 자구 벽 이동을 이용한 정보 저장 장치 |
KR10-2006-0089651 | 2006-09-15 |
Publications (2)
Publication Number | Publication Date |
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JP2008091901A true JP2008091901A (ja) | 2008-04-17 |
JP5305627B2 JP5305627B2 (ja) | 2013-10-02 |
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JP2007239834A Active JP5305627B2 (ja) | 2006-09-15 | 2007-09-14 | 磁区壁移動を利用したメモリ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7652906B2 (ja) |
EP (1) | EP1901305B1 (ja) |
JP (1) | JP5305627B2 (ja) |
KR (1) | KR100790885B1 (ja) |
CN (1) | CN101145597B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017525161A (ja) * | 2014-07-15 | 2017-08-31 | コリア リサーチ インスティテュート オブ スタンダーズ アンド サイエンス | 磁性構造体の磁区壁制御方法、及びそれを用いた磁気メモリ素子 |
Families Citing this family (11)
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KR100790886B1 (ko) * | 2006-09-15 | 2008-01-03 | 삼성전자주식회사 | 자구 벽 이동을 이용한 정보 저장 장치 |
KR100873637B1 (ko) * | 2006-11-28 | 2008-12-12 | 삼성전자주식회사 | 자기장 인가부를 이용한 자구벽 이동 장치 및 이를 이용한메모리 장치 |
JP4640489B2 (ja) * | 2008-10-20 | 2011-03-02 | ソニー株式会社 | 情報記憶素子、及び、情報記憶素子における情報書込み・読出し方法 |
US8406029B2 (en) | 2009-02-17 | 2013-03-26 | Samsung Electronics Co., Ltd. | Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices |
US8050074B2 (en) * | 2009-02-17 | 2011-11-01 | Samsung Electronics Co., Ltd. | Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices |
TWI415315B (zh) * | 2009-04-07 | 2013-11-11 | Univ Nat Changhua Education | 軌道競賽式非揮發性記憶體製造方法及其結構 |
US8374052B2 (en) * | 2009-05-08 | 2013-02-12 | Samsung Electronics Co., Ltd. | Information storage devices using magnetic domain wall movement and methods of operating the same |
US8279667B2 (en) * | 2009-05-08 | 2012-10-02 | Samsung Electronics Co., Ltd. | Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movement |
KR101584099B1 (ko) | 2009-08-19 | 2016-01-13 | 삼성전자주식회사 | 자성층을 구비한 트랙 및 이를 포함하는 자성소자 |
US8638601B1 (en) * | 2012-07-06 | 2014-01-28 | International Business Machines Corporation | Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces |
WO2015066469A1 (en) * | 2013-11-01 | 2015-05-07 | Carnegie Mellon University | Magnetic disk of a data storage device with templated growth of magnetic recording layer |
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US20050078509A1 (en) * | 2003-10-14 | 2005-04-14 | International Business Machines Corporation | System and method for reading data stored on a magnetic shift register |
JP2005150303A (ja) * | 2003-11-13 | 2005-06-09 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
JP2006237183A (ja) * | 2005-02-24 | 2006-09-07 | Internatl Business Mach Corp <Ibm> | 磁気シフト・レジスタ・メモリ・デバイスにおいて用いるデータ・トラックの製造方法 |
JP2007324276A (ja) * | 2006-05-31 | 2007-12-13 | Fujitsu Ltd | 磁気メモリ装置及びその製造方法 |
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EP1310962A1 (en) * | 2001-11-08 | 2003-05-14 | Hitachi Ltd. | Magnetic memory cell |
US6834005B1 (en) * | 2003-06-10 | 2004-12-21 | International Business Machines Corporation | Shiftable magnetic shift register and method of using the same |
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JP2006005308A (ja) * | 2004-06-21 | 2006-01-05 | Victor Co Of Japan Ltd | 不揮発性磁気メモリ |
US7236386B2 (en) * | 2004-12-04 | 2007-06-26 | International Business Machines Corporation | System and method for transferring data to and from a magnetic shift register with a shiftable data column |
KR100933888B1 (ko) * | 2005-12-29 | 2009-12-28 | 서울시립대학교 산학협력단 | 자성 금속을 이용한 자기 기억 소자 |
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- 2007-09-14 JP JP2007239834A patent/JP5305627B2/ja active Active
- 2007-09-14 EP EP07116415.6A patent/EP1901305B1/en active Active
- 2007-09-14 CN CN2007101540948A patent/CN101145597B/zh active Active
Patent Citations (4)
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US20050078509A1 (en) * | 2003-10-14 | 2005-04-14 | International Business Machines Corporation | System and method for reading data stored on a magnetic shift register |
JP2005150303A (ja) * | 2003-11-13 | 2005-06-09 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
JP2006237183A (ja) * | 2005-02-24 | 2006-09-07 | Internatl Business Mach Corp <Ibm> | 磁気シフト・レジスタ・メモリ・デバイスにおいて用いるデータ・トラックの製造方法 |
JP2007324276A (ja) * | 2006-05-31 | 2007-12-13 | Fujitsu Ltd | 磁気メモリ装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017525161A (ja) * | 2014-07-15 | 2017-08-31 | コリア リサーチ インスティテュート オブ スタンダーズ アンド サイエンス | 磁性構造体の磁区壁制御方法、及びそれを用いた磁気メモリ素子 |
Also Published As
Publication number | Publication date |
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EP1901305A3 (en) | 2009-06-03 |
US20080068881A1 (en) | 2008-03-20 |
CN101145597B (zh) | 2010-12-15 |
CN101145597A (zh) | 2008-03-19 |
JP5305627B2 (ja) | 2013-10-02 |
US7652906B2 (en) | 2010-01-26 |
EP1901305A2 (en) | 2008-03-19 |
EP1901305B1 (en) | 2014-06-18 |
KR100790885B1 (ko) | 2008-01-02 |
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