JP2008091729A - 半導体基板の製造方法 - Google Patents
半導体基板の製造方法 Download PDFInfo
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- JP2008091729A JP2008091729A JP2006272323A JP2006272323A JP2008091729A JP 2008091729 A JP2008091729 A JP 2008091729A JP 2006272323 A JP2006272323 A JP 2006272323A JP 2006272323 A JP2006272323 A JP 2006272323A JP 2008091729 A JP2008091729 A JP 2008091729A
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Abstract
【解決手段】本発明の第1側面に係る半導体基板の製造方法は、下地基板の上にクロム層を50℃以上の温度で成膜するクロム層成膜工程と、前記クロム層を窒化してクロム窒化物膜にする窒化工程とを備えたことを特徴とする。
【選択図】図9
Description
李旭鉉、外7名、「MBE法による低温CrxNバッファ層を用いたGaNの成長」、応用物理学会予稿集、364ペ−ジ
20 クロム層
30 クロム窒化物膜
40 バッファ層
50 結晶層
Claims (6)
- 下地基板の上にクロム層を50℃以上の温度で成膜するクロム層成膜工程と、
前記クロム層を窒化してクロム窒化物膜にする窒化工程と、
を備えたことを特徴とする半導体基板の製造方法。 - 下地基板の上にクロム層を50℃以上の温度で成膜するクロム層成膜工程と、
前記クロム層を窒化してクロム窒化物膜にする窒化工程と、
前記クロム窒化物膜の上にIII族窒化物半導体の結晶層を成長させる結晶層成長工程と、
を備えたことを特徴とする半導体基板の製造方法。 - 前記下地基板の上面は、六方晶系及び擬似六方晶系のいずれかの(0001)面、又は立方晶系の(111)面である
ことを特徴とする請求項1又は2に記載の半導体基板の製造方法。 - 前記窒化工程では、前記クロム窒化物膜の表面に三角錐形状の複数の微結晶部を形成する
ことを特徴とする請求項1から3のいずれか1項に記載の半導体基板の製造方法。 - 前記クロム窒化物膜の三角錐形状の微結晶部は、1辺の長さが10nm以上300nm以下である
ことを特徴とする請求項4に記載の構造体。 - 前記クロム窒化物膜をエッチングして前記III族窒化物半導体の結晶を前記下地基板から分離する分離工程をさらに備えた
ことを特徴とする請求項1から5のいずれか1項に記載の半導体基板の製造方法。
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JP2008091729A true JP2008091729A (ja) | 2008-04-17 |
JP4236122B2 JP4236122B2 (ja) | 2009-03-11 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010074346A1 (ja) | 2008-12-26 | 2010-07-01 | Dowaホールディングス株式会社 | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
WO2010110489A1 (ja) | 2009-03-27 | 2010-09-30 | Dowaホールディングス株式会社 | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
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2006
- 2006-10-03 JP JP2006272323A patent/JP4236122B2/ja not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010074346A1 (ja) | 2008-12-26 | 2010-07-01 | Dowaホールディングス株式会社 | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
US8736025B2 (en) | 2008-12-26 | 2014-05-27 | Dowa Electroncs Materials Co., Ltd. | III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity |
WO2010110489A1 (ja) | 2009-03-27 | 2010-09-30 | Dowaホールディングス株式会社 | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
US8878189B2 (en) | 2009-03-27 | 2014-11-04 | Dowa Holdings Co., Ltd. | Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same |
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