JP2008091619A - Solid image pickup apparatus and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To eliminate the variation of mounting accuracy of a solid image pickup element chip, and to attain to mount it with accurate adjustment of the deviation and position of an image pickup element plane. <P>SOLUTION: The image pickup apparatus includes an image pickup element chip 2, a package 5 having a recessed portion to house the image pickup element chip 2, a transparent substrate 3 adhered to the package 5 in order to carry out the hermetic seal of the image pickup element chip 2, wherein in the bottom of the recessed portion, a plurality of protrusions is formed, the image pickup element chip 2 and the package 5 are adhered through a plurality of protrusions, and wherein the planes connecting the apex where the plurality of protrusions and the image pickup element chip 2 are adhered is in parallel to the transparent substrate 3. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device including a solid-state imaging device such as a CCD or a CMOS sensor and a manufacturing method thereof.

  In recent years, solid-state imaging devices including solid-state imaging devices such as CCDs and CMOS sensors have been widely used. Digital still cameras and digital video cameras are examples of main products used for solid-state imaging devices.

  As a conventional technique of the solid-state imaging device, there is a technique disclosed in Patent Document 1.

In Patent Document 1, the package member has a concave cavity on the sealing surface, a solid-state imaging device chip is mounted in the cavity, and a glass cap is bonded to the sealing surface flattened by polishing with an organic adhesive. And hermetically sealed.
JP-A-63-313857

  However, in the case of a chip stack type solid-state imaging device in which a semiconductor element chip on which circuits such as an A / D converter and a timing generator are mounted is disposed below the solid-state imaging element chip, there are the following difficulties.

  Due to variations in the mounting accuracy of the semiconductor element chip below the solid-state image sensor chip, it has been difficult to accurately adjust and mount the tilt and position of the solid-state image sensor surface.

  In particular, this problem has become prominent when a plurality of semiconductor element chips are stacked and disposed below the solid-state imaging element chip.

  Accordingly, an object of the present invention is to eliminate variations in mounting accuracy of semiconductor elements below the solid-state image sensor chip and to mount the tilt and position of the solid-state image sensor surface with high accuracy.

  As means for solving the above-mentioned problems, the present invention is bonded to the solid-state image sensor chip, a package having a recess for housing the solid-state image sensor chip, and the package for sealing the solid-state image sensor chip. A plurality of protrusions formed on a bottom side of the concave portion, and the solid-state imaging device chip and the package are bonded via the plurality of protrusions. And the solid image pickup device chip, the plane connecting the vertices is parallel to the transparent substrate.

  The present invention also includes a solid-state image sensor chip, a semiconductor chip including a circuit for processing a signal output from the solid-state image sensor chip, a package having a recess for housing the solid-state image sensor chip and the semiconductor chip, A solid-state imaging device comprising: the solid-state imaging device chip; and a transparent substrate bonded to the package for sealing the semiconductor chip. The semiconductor chip is disposed on a bottom side of the recess, and the semiconductor chip includes a plurality of the semiconductor chips. Is formed, the solid-state image sensor chip and the semiconductor chip are bonded via the plurality of protrusions, the surface connecting the apexes where the plurality of protrusions and the solid-state image sensor chip are bonded, It is characterized by being parallel to the transparent substrate.

  According to another aspect of the present invention, there is provided a semiconductor device comprising: a semiconductor chip; a package having a recess for housing the semiconductor chip; and a lid member bonded to the package for sealing the semiconductor chip. A plurality of protrusions are formed on the bottom side, the semiconductor chip and the package are bonded via the plurality of protrusions, and the surface connecting the apexes where the plurality of protrusions and the semiconductor chip are bonded is It is characterized by being parallel to the transparent substrate.

  According to another aspect of the present invention, there is provided a solid-state imaging device comprising: a solid-state imaging device chip; a package having a recess for housing the solid-state imaging device chip; and a transparent substrate bonded to the package for sealing the solid-state imaging device chip. In the manufacturing method of the apparatus, a step of applying a resin that becomes a protrusion to the recess, a step of curing the applied resin in a deformable state, a step of molding the cured resin, and the molded resin And a step of curing the solid-state imaging device chip on the cured resin.

  In addition, the present invention provides a solid-state image sensor chip, a semiconductor chip including a circuit for processing a signal output from the solid-state image sensor chip, and a package having a recess for housing the solid-state image sensor chip and the semiconductor chip. A solid-state imaging device manufacturing method comprising: a solid-state imaging device chip and a transparent substrate bonded to the package for sealing the semiconductor chip; and disposing the semiconductor chip on a bottom side of the recess; A step of applying a resin to be a protrusion on the semiconductor chip, a step of curing the applied resin in a deformable state, a step of molding the cured resin, and the molding of the molded resin is impossible. And a step of mounting the solid-state imaging element chip on the cured resin.

  According to the present invention, it is possible to mount a solid-state imaging device in a state in which the tilt and the position of the solid-state imaging device surface are appropriately aligned with respect to the reference surface of the package without using a package with excellent external accuracy.

  Also in the chip stack type solid-state imaging device, the solid-state imaging element can be mounted in a state where the tilt and the position of the solid-state imaging element surface are appropriately aligned with respect to the reference plane of the package.

  Thereby, in a digital still camera and a digital video camera using a solid-state imaging device, it is possible to easily obtain high-quality performance.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS The best mode for carrying out the present invention will be described below with reference to the accompanying drawings.

[First Embodiment]
FIG. 1 is a cross-sectional view of a solid-state imaging device as a first embodiment of the present invention.

  The solid-state imaging device according to the present embodiment includes a solid-state imaging device chip 2, an LCC1 having a recess that houses the solid-state imaging device chip 2, and a transparent substrate that is bonded to the LCC1 in order to hermetically seal the solid-state imaging device chip 2. 3. In addition, the bottom surface of the concave portion of the LCC 1 includes three point-like protrusions 6 made of resin.

  The LCC 1 is made of a ceramic such as alumina.

  The transparent substrate 3 is made of, for example, glass or acrylic resin.

  The dot-like projections 6 are made of any one of an ultraviolet curable resin, an ultraviolet / heat combination curable resin, a thermosetting resin, and a thermoplastic resin.

  The number of point-like protrusions 6 is preferably three, but it may be more.

  Moreover, the convex part 7 of three places is provided in the back surface of LCC1.

  When the back surface of the LCC 1 is used as a reference surface for the tilt and height of the solid-state imaging device chip 2, only one reference surface is obtained by the three convex portions 7 even if the LCC 1 is warped and distortion occurs.

  The point-like protrusions 6 are formed so as to be parallel and constant with respect to a reference plane determined by the three convex portions 7.

  By mounting the solid-state imaging device chip 2 on the point-like protrusion 6, the tilt and the position of the solid-state imaging device surface can be appropriately adjusted with respect to the reference surface of the LCC1, regardless of the external accuracy of the LCC1.

[Second Embodiment]
FIG. 2 is a cross-sectional view of a solid-state imaging device as a second embodiment of the present invention.

  The solid-state imaging device of the present embodiment is bonded to the C-DIP 5 in order to hermetically seal the solid-state imaging element chip 2 and the solid-state imaging element chip 2, the C-DIP 5 having a recess for housing the solid-state imaging element chip 2. The transparent substrate 3 is provided.

  Furthermore, three point-like protrusions 6 made of resin are provided on the bottom surface of the recess of the C-DIP 5.

  The dot-like projections 6 are made of any one of an ultraviolet curable resin, an ultraviolet / heat combination curable resin, a thermosetting resin, and a thermoplastic resin.

  The number of point-like protrusions 6 is preferably three, but it may be more.

  The point-like protrusions 6 are formed so as to be parallel and at a constant height with respect to the uppermost surface of the C-DIP 5, that is, the adhesive surface of the transparent substrate 3. Chip 2 is mounted.

  By doing so, the tilt and position of the surface of the solid-state imaging device can be appropriately adjusted with respect to the uppermost surface of the C-DIP 5 regardless of the external accuracy of the C-DIP 5.

[Third Embodiment]
FIG. 3 is a cross-sectional view of a solid-state imaging device as a third embodiment of the present invention.

  The solid-state imaging device of the present embodiment is bonded to the C-DIP 5 in order to hermetically seal the solid-state imaging element chip 2 and the solid-state imaging element chip 2, the C-DIP 5 having a recess for housing the solid-state imaging element chip 2. The transparent substrate 3 is provided.

  Furthermore, three point-like protrusions 6 made of resin are provided on the bottom surface of the recess of the C-DIP 5.

  The transparent substrate 3 is bonded and fixed to a step portion provided on the uppermost surface of the C-DIP 5 so that the upper surface of the transparent substrate 3 does not protrude above the uppermost surface of the C-DIP 5.

  The dot-like projections 6 are made of any one of an ultraviolet curable resin, an ultraviolet / heat combination curable resin, a thermosetting resin, and a thermoplastic resin.

  The number of point-like projections 6 is preferably three, but it may be more.

  And the dotted | punctate protrusion 6 is shape | molded so that it may become parallel and fixed height with respect to the uppermost surface of C-DIP5.

  By mounting the solid-state image sensor chip 2 on the dot-like projections 6, the tilt and position of the solid-state image sensor surface can be appropriately adjusted with respect to the uppermost surface of the C-DIP 5 regardless of the external accuracy of the C-DIP 5. .

  Further, since the uppermost surface of the C-DIP 5 is directly bonded to the prism 10, the tilt and the position of the solid-state image pickup device surface are also properly aligned with the optical axis of the prism 10.

[Fourth Embodiment]
FIG. 4 is a cross-sectional view of a solid-state imaging device according to the fourth embodiment of the present invention.

  The solid-state imaging device of the present embodiment includes a solid-state imaging element chip 2 and a semiconductor element chip 11, and an LCC 1 having a recess that houses the solid-state imaging element chip 2 and the semiconductor element chip 11. In addition, a transparent substrate 3 bonded to the LCC 1 is provided to hermetically seal the solid-state imaging element chip 2 and the semiconductor element chip 11.

  The rear surface of the LCC 1 includes three convex portions 7.

  The semiconductor element chip 11 includes circuits such as an A / D converter and a timing generator, for example.

  The semiconductor element chip 11 is mounted in the recess of the LCC 1 and includes three dot-like protrusions 6 formed of resin on the upper surface of the semiconductor element chip 11.

  The dot-like projections 6 are made of any one of an ultraviolet curable resin, an ultraviolet / heat combination curable resin, a thermosetting resin, and a thermoplastic resin.

  The number of point-like protrusions 6 is preferably three, but it may be more.

  Further, the point-like protrusions 6 are formed so as to be parallel and constant with respect to a reference plane determined by the three convex portions 7.

  The solid-state image pickup device chip 2 is mounted on the dot-like projections 6 and can adjust the tilt and position of the solid-state image pickup device surface to the reference surface of the LCC 1 regardless of the external accuracy of the LCC 1.

[Fifth Embodiment]
FIG. 5 is a diagram showing a configuration of a solid-state imaging device as a fifth embodiment of the present invention. FIG. 5A is a plan view seen from above, and FIG. 5B is a cross-sectional view taken along the line AA ′ in FIG.

  In FIG. 5, 101 is a lead terminal, 102 is a package, 103 is a semiconductor element, 104 is a die attach adhesive layer, 105 is a wire, 106 is a sealing adhesive layer, 107 is a lid member, and 108 is a protrusion.

  Reference numeral 102a denotes a package recess, and 102b denotes a wind frame surface.

  In the present embodiment, lead terminals 101 for external connection are embedded in the package 102 and wired.

  The package 102 is formed of a ceramic or resin molded body, and has a concave shape 102 a for mounting the semiconductor element 103.

  The semiconductor element 103 is fixed to the package recess 102 a through a die attach adhesive layer 104 using a die attach paste such as silver or epoxy.

  Further, the electrode of the semiconductor element 103 is electrically connected to the lead terminal 101 by a wire 105 such as gold or aluminum.

  The package 102 on which the semiconductor element 103 is mounted is hermetically sealed with a translucent lid 107 through a sealing adhesive layer 106 using an ultraviolet curable resin or a thermosetting resin on the wind frame surface 102b. It has become.

  In particular, in the present embodiment, three protrusions 108 having a uniform height are provided on the wind frame surface 102b.

  As a result, the lid member 107 is supported at three points of the protruding portion 108, the distance from the wind frame surface 102b is constant no matter where the sealing surface is taken, and the lid member 107 is sealed without tilting. Other configurations are the same as those of the second embodiment.

[Sixth Embodiment]
FIG. 6 is a diagram showing a solid-state imaging device according to the sixth embodiment of the present invention. 6A is a plan view seen from above, and FIG. 6B is a cross-sectional view taken along the line AA ′ in FIG. 6A.

  The same members as those in the fifth embodiment are denoted by the same reference numerals.

  In the present embodiment, the protrusions 108 are provided at each corner of the wind frame surface 102b.

  According to the present embodiment, it is possible to ensure a certain seal width without increasing the outer shape of the package 102 even if the protrusion is formed. Other configurations are the same as those of the second embodiment.

(Production method)
[First Embodiment]
Next, a first embodiment of a method for manufacturing a solid-state imaging device as an embodiment of the present invention will be described.

  First, as a 1st process, resin is apply | coated to the recessed part bottom face of C-DIP5 at three places dot-like.

  As the resin, an ultraviolet curable resin, an ultraviolet / heat combined curable resin, or a thermosetting resin is used.

  As a second step, the resin applied in the form of dots is cured to a state where the adhesiveness of the surface is lowered and plastic deformation is possible.

  The curing method is performed by irradiating ultraviolet rays in the case of an ultraviolet curable resin, an ultraviolet / heat combination curable resin, and by heating in the case of a thermosetting resin.

  As a third step, as shown in FIG. 7, the resin cured by the molding jig 12 so as to be plastically deformable is molded.

  The molding jig 12 includes an abutting surface to the uppermost surface of the C-DIP 5 and a pressing surface parallel to the abutting surface and having a certain height.

  As a fourth step, the resin is completely cured to obtain the point-like protrusions 6.

  As a fifth step, the solid-state image sensor chip is mounted on the dot-like protrusion 6.

  As a sixth step, the solid-state imaging device chip and the C-DIP 5 are electrically connected with a gold wire.

  As a final step, a transparent substrate is bonded and fixed to the stepped portion on the uppermost surface of C-DIP5.

  In addition, this embodiment has the process of arrange | positioning the semiconductor chip containing the circuit which processes the signal output from a solid-state image sensor chip | tip before a 1st process at the bottom of the said recessed part, and after that the said semiconductor It is also conceivable to apply the resin in three spots on the chip.

[Second Embodiment]
Next, a second embodiment of the method for manufacturing a solid-state imaging device as an embodiment of the present invention will be described.

  First, as a 1st process, resin is apply | coated to the recessed part bottom face of C-DIP5 at three places dot-like.

  As the resin, a thermoplastic resin is used.

  As the thermoplastic resin, one having a temperature at which plasticity is developed is higher than a heat treatment temperature to be performed in a later step.

  As a second step, the pointed protrusion 6 is obtained by molding the resin while heating it with the molding jig 12 shown in FIG.

  The molding jig 12 includes an abutting surface to the uppermost surface of the C-DIP 5 and a pressing surface parallel to the abutting surface and having a certain height.

  As a third step, a solid-state image sensor chip is mounted on the dot-like projection 6.

  As a fourth step, the solid-state imaging device chip and the C-DIP 5 are electrically connected with a gold wire.

As a final step, a transparent substrate is bonded and fixed to the stepped portion on the uppermost surface of C-DIP5.
In addition, this embodiment has the process of arrange | positioning the semiconductor chip containing the circuit which processes the signal output from a solid-state image sensor chip | tip in the bottom of the said recessed part before a 1st process, and after that the said semiconductor chip It is also conceivable to apply the resin in three spots on the top.

[Third Embodiment]
Next, a third embodiment of the method for manufacturing a solid-state imaging device as an embodiment of the present invention will be described.

  First, as a 1st process, resin is apply | coated to the recessed part bottom face of C-DIP5 at three places dot-like.

  As the resin, an ultraviolet curable resin or an ultraviolet / heat combination curable resin is used.

  As a second step, molding is performed by the molding jig 12 shown in FIG. 7, and ultraviolet rays are irradiated in this state, the resin is cured, and the point-like projections 6 are obtained.

  The molding jig 12 includes an abutting surface to the uppermost surface of the C-DIP 5 and a pressing surface parallel to the abutting surface and having a certain height, and is made of an ultraviolet light transmissive material.

  As a third step, a solid-state image sensor chip is mounted on the dot-like projection 6. As a fourth step, the solid-state imaging device chip and the C-DIP 5 are electrically connected with a gold wire.

  As a final step, a transparent substrate is bonded and fixed to the stepped portion on the uppermost surface of C-DIP5.

  In addition, this embodiment has the process of arrange | positioning the semiconductor chip containing the circuit which processes the signal output from a solid-state image sensor chip | tip before a 1st process at the bottom of the said recessed part, and after that the said semiconductor It is also conceivable to apply the resin in three spots on the chip.

  The present invention can be used for solid-state imaging devices such as digital cameras and digital still cameras.

1 is a cross-sectional view of a solid-state imaging device as a first embodiment of the present invention. It is sectional drawing of the solid-state imaging device as the 2nd Embodiment of this invention. It is sectional drawing of the solid-state imaging device as the 3rd Embodiment of this invention. It is sectional drawing of the solid-state imaging device by the 4th Embodiment of this invention. It is a top view of the solid-state imaging device by the 5th Embodiment of this invention. It is a top view of the solid-state imaging device by a 6th embodiment of the present invention. It is sectional drawing for demonstrating the manufacturing process of the solid-state imaging device as one Embodiment of this invention.

Explanation of symbols

1 Leadless Chip Carrier type package (LCC)
2 Solid-state image sensor chip 3 Transparent substrate 4 Metal plate for camera fixing 5 Ceramic-Dual In-line Package type package (C-DIP)
6 Point-like projections 7 Recesses on the back of the package 8 Adhesive 9 Adhesive 10 Prism 11 Semiconductor element chip 12 Molding jig

Claims (14)

In a solid-state imaging device comprising: a solid-state imaging device chip; a package having a recess that houses the solid-state imaging device chip; and a transparent substrate that is bonded to the package to seal the solid-state imaging device chip.
A plurality of protrusions are formed on the bottom of the recess,
The solid-state image sensor chip and the package are bonded via the plurality of protrusions,
A solid-state imaging device, wherein a surface connecting apexes to which the plurality of protrusions and the solid-state imaging device chip are bonded is parallel to the transparent substrate. A solid-state image sensor chip; a semiconductor chip including a circuit for processing a signal output from the solid-state image sensor chip; a package having a recess for housing the solid-state image sensor chip and the semiconductor chip; the solid-state image sensor chip; In a solid-state imaging device comprising: a transparent substrate bonded to the package for sealing the semiconductor chip;
The semiconductor chip is disposed on the bottom side of the recess,
A plurality of protrusions are formed on the semiconductor chip,
The solid-state imaging device chip and the semiconductor chip are bonded via the plurality of protrusions,
A solid-state imaging device, wherein a surface connecting apexes to which the plurality of protrusions and the solid-state imaging element chip are bonded is parallel to the transparent substrate. In a semiconductor device comprising: a semiconductor chip; a package having a recess for housing the semiconductor chip; and a lid member bonded to the package for sealing the semiconductor chip.
A plurality of protrusions are formed on the bottom of the recess,
The semiconductor chip and the package are bonded via the plurality of protrusions,
A semiconductor device characterized in that a surface connecting apexes to which the plurality of protrusions and the semiconductor chip are bonded is parallel to the transparent substrate. The solid-state imaging device according to claim 1, wherein the number of the protrusions is three. 4. The solid-state imaging device according to claim 1, wherein the protrusion is made of an ultraviolet curable resin or an ultraviolet / heat combination curable resin. 5. The solid-state imaging device according to claim 1, wherein the protrusion is made of a thermosetting resin. The solid-state imaging device according to claim 1, wherein the protrusion is made of a thermoplastic resin. The solid-state imaging device according to claim 1, wherein at least three convex portions are provided on a back surface of the package. The solid-state imaging device according to claim 1, wherein the package is made of ceramic. The semiconductor device according to claim 3, wherein the lid member is a quadrangle, and the protrusions are provided at four corners. In a method for manufacturing a solid-state imaging device, comprising: a solid-state imaging device chip; a package having a recess for housing the solid-state imaging device chip; and a transparent substrate bonded to the package for sealing the solid-state imaging device chip. ,
Applying a resin to be a protrusion to the recess;
Curing the applied resin in a deformable state;
Molding the cured resin;
Curing the molded resin so that it cannot be molded;
Mounting the solid-state imaging device chip on the cured resin. A method for manufacturing a solid-state imaging device, comprising: A solid-state image sensor chip, a semiconductor chip including a circuit for processing a signal output from the solid-state image sensor chip, a package having a recess for housing the solid-state image sensor chip and the semiconductor chip, and the solid-state image sensor chip And a transparent substrate bonded to the package for sealing the semiconductor chip, and a manufacturing method of a solid-state imaging device,
Placing the semiconductor chip on the bottom of the recess;
Applying a resin to be a protrusion on the semiconductor chip;
Curing the applied resin in a deformable state;
Molding the cured resin;
Curing the molded resin so that it cannot be molded;
Mounting the solid-state imaging device chip on the cured resin. A method for manufacturing a solid-state imaging device, comprising: 13. The method of manufacturing a solid-state imaging device according to claim 11, wherein the resin is any one of an ultraviolet curable resin, an ultraviolet / heat combination curable resin, and a thermosetting resin. The method of manufacturing a solid-state imaging device according to claim 11, wherein the resin is a thermoplastic resin.