JP2008085317A - 結晶性半導体膜、及び半導体装置の作製方法 - Google Patents

結晶性半導体膜、及び半導体装置の作製方法 Download PDF

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Publication number
JP2008085317A
JP2008085317A JP2007223982A JP2007223982A JP2008085317A JP 2008085317 A JP2008085317 A JP 2008085317A JP 2007223982 A JP2007223982 A JP 2007223982A JP 2007223982 A JP2007223982 A JP 2007223982A JP 2008085317 A JP2008085317 A JP 2008085317A
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film
semiconductor film
laser beam
laser
crystal
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JP2008085317A5 (enExample
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Tomoaki Moriwaka
智昭 森若
Koichiro Tanaka
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007223982A 2006-08-31 2007-08-30 結晶性半導体膜、及び半導体装置の作製方法 Withdrawn JP2008085317A (ja)

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JP2006236078 2006-08-31
JP2007223982A JP2008085317A (ja) 2006-08-31 2007-08-30 結晶性半導体膜、及び半導体装置の作製方法

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JP2008085317A5 JP2008085317A5 (enExample) 2010-10-07

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8421080B2 (en) 2010-06-21 2013-04-16 Panasonic Corporation Thin-film transistor array device, organic EL display device, and method of manufacturing thin-film transistor array device
CN104966308A (zh) * 2015-06-12 2015-10-07 深圳大学 一种计算激光光束光斑大小的方法
JP2018185427A (ja) * 2017-04-26 2018-11-22 株式会社日本製鋼所 ディスプレイの製造方法、ディスプレイ及び液晶テレビ
WO2019003417A1 (ja) * 2017-06-30 2019-01-03 シャープ株式会社 可撓性表示装置及び可撓性表示装置の製造方法
KR20220109169A (ko) * 2021-01-28 2022-08-04 재단법인대구경북과학기술원 모놀리식 3차원 소자의 상부층 고결정화 방법 및 이를 통해 제조된 모놀리식 3차원 소자

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185917A (ja) * 1985-02-14 1986-08-19 Asahi Glass Co Ltd 半導体装置の製造方法
JPS63299322A (ja) * 1987-05-29 1988-12-06 Sony Corp 単結晶シリコン膜の形成方法
JPH0897141A (ja) * 1994-09-22 1996-04-12 A G Technol Kk 多結晶半導体層の形成方法、多結晶半導体tft、及びビームアニール装置
JP2002280302A (ja) * 2001-03-16 2002-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003124119A (ja) * 2002-08-21 2003-04-25 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
JP2003218058A (ja) * 2001-11-16 2003-07-31 Semiconductor Energy Lab Co Ltd レーザ照射方法および半導体装置の作製方法
JP2006080511A (ja) * 2004-09-01 2006-03-23 Japan Steel Works Ltd:The レーザ放射によってアモルファス半導体を改質するための方法及び装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185917A (ja) * 1985-02-14 1986-08-19 Asahi Glass Co Ltd 半導体装置の製造方法
JPS63299322A (ja) * 1987-05-29 1988-12-06 Sony Corp 単結晶シリコン膜の形成方法
JPH0897141A (ja) * 1994-09-22 1996-04-12 A G Technol Kk 多結晶半導体層の形成方法、多結晶半導体tft、及びビームアニール装置
JP2002280302A (ja) * 2001-03-16 2002-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003218058A (ja) * 2001-11-16 2003-07-31 Semiconductor Energy Lab Co Ltd レーザ照射方法および半導体装置の作製方法
JP2003124119A (ja) * 2002-08-21 2003-04-25 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
JP2006080511A (ja) * 2004-09-01 2006-03-23 Japan Steel Works Ltd:The レーザ放射によってアモルファス半導体を改質するための方法及び装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8421080B2 (en) 2010-06-21 2013-04-16 Panasonic Corporation Thin-film transistor array device, organic EL display device, and method of manufacturing thin-film transistor array device
CN104966308A (zh) * 2015-06-12 2015-10-07 深圳大学 一种计算激光光束光斑大小的方法
CN104966308B (zh) * 2015-06-12 2017-12-01 深圳大学 一种计算激光光束光斑大小的方法
JP2018185427A (ja) * 2017-04-26 2018-11-22 株式会社日本製鋼所 ディスプレイの製造方法、ディスプレイ及び液晶テレビ
WO2019003417A1 (ja) * 2017-06-30 2019-01-03 シャープ株式会社 可撓性表示装置及び可撓性表示装置の製造方法
CN110832626A (zh) * 2017-06-30 2020-02-21 夏普株式会社 可挠性显示装置以及可挠性显示装置的制造方法
US10573205B2 (en) 2017-06-30 2020-02-25 Sharp Kabushiki Kaisha Flexible display device and method for manufacturing flexible display device
CN110832626B (zh) * 2017-06-30 2024-03-12 夏普株式会社 可挠性显示装置
KR20220109169A (ko) * 2021-01-28 2022-08-04 재단법인대구경북과학기술원 모놀리식 3차원 소자의 상부층 고결정화 방법 및 이를 통해 제조된 모놀리식 3차원 소자
KR102470876B1 (ko) * 2021-01-28 2022-11-25 재단법인대구경북과학기술원 모놀리식 3차원 소자의 상부층 고결정화 방법 및 이를 통해 제조된 모놀리식 3차원 소자

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