JP2008052064A - 微細パターン形成用樹脂組成物及び微細パターン形成方法 - Google Patents
微細パターン形成用樹脂組成物及び微細パターン形成方法 Download PDFInfo
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- JP2008052064A JP2008052064A JP2006228588A JP2006228588A JP2008052064A JP 2008052064 A JP2008052064 A JP 2008052064A JP 2006228588 A JP2006228588 A JP 2006228588A JP 2006228588 A JP2006228588 A JP 2006228588A JP 2008052064 A JP2008052064 A JP 2008052064A
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Abstract
【解決手段】水酸基を含有する樹脂と、架橋成分と、アルコール及び全溶媒に対して10重量%以下の水を含むアルコール系溶媒と、を含有する微細パターン形成用樹脂組成物であって、前記架橋成分として、その分子内にエポキシ基を2個以上有する化合物を含有する微細パターン形成用樹脂組成物。
【選択図】なし
Description
本発明の微細パターン形成用樹脂組成物は、水酸基を含有する樹脂と架橋成分とアルコール性溶媒とからなるアルコール溶液である。そして、架橋成分としては、(1)その分子内にエポキシ基を2個以上有する化合物を含有しているか、(2)その分子内にオキセタニル基を2個以上有する化合物と下記式(1)で表される基を含む化合物とを含有している。
水酸基を含有する樹脂としては、アルコール類、フェノール類、カルボン酸類に由来する水酸基のうち少なくとも1種の水酸基(−OH)を有する構成単位を含む樹脂であればよい。該樹脂としては、(メタ)アクリル系樹脂、ビニル系樹脂(以下、(メタ)アクリル系樹脂及びビニル系樹脂「共重合体I」という。)、ノボラック系樹脂、又はこれらの混合樹脂を用いることができる。アルコール可溶性の水酸基を含有する上記樹脂を用いることにより、エッチング耐性に優れた微細パターン形成用樹脂組成物が得られる。
また、例えば、フェノール性水酸基を有する単量体及びアルコール性水酸基を有する単量体の場合、水酸基を有する構成単位のみとすることができる。
金属等の不純物を除去する方法としては、ゼータ電位フィルターを用いて重合溶液中の金属を吸着させる方法、蓚酸、スルホン酸等の酸性水溶液で重合溶液を洗浄することで金属をキレート状態にして除去する方法等が挙げられる。また、残留する単量体やオリゴマー成分を規定値以下に除去する方法としては、水洗や適切な溶媒を組み合わせることにより残留する単量体やオリゴマー成分を除去する液々抽出法、特定の分子量以下のもののみを抽出除去する限外濾過等の溶液状態での精製方法、重合溶液を貧溶媒へ滴下することで樹脂を貧溶媒中に凝固させることにより残留する単量体等を除去する再沈澱法、濾別した樹脂スラリー貧溶媒で洗浄する等の固体状態での精製方法等が挙げられる。また、これらの方法を組み合わせてもよい。
本発明の組成物は、架橋成分として、その分子内にエポキシ基を2個以上有する化合物(以下、「架橋成分Ia」という)を含有するものである。このような化合物を架橋成分として用いることによって、パターン収縮率をより向上させることができるという好ましい効果が発揮される。
本発明に使用できるアルコール系溶媒は、アルコール及び全溶媒に対して10重量%以下の水を含む溶媒である。水酸基を有する樹脂及び架橋成分を十分に溶解し、かつフォトレジスト膜上に塗布するに際し、フォトレジスト膜とインターミキシングを起こさない溶媒であれば使用できる。
本発明の微細パターン形成用樹脂組成物には、塗布性、消泡性、レベリング性等を向上させる目的で界面活性剤を配合することもできる。
上記微細パターン形成用樹脂組成物を用いて、次の方法で微細パターンが形成される。
まず、基板上にレジストパターンを形成する。例えば、スピンコート等の従来公知の方法により8インチ或いは12インチのシリコンウエハ基板上に反射防止膜(有機膜或いは無機膜)を形成する。次いで、スピンコート等の従来公知の方法によりフォトレジストを塗布し、例えば、80℃〜140℃程度、60〜120秒程度の条件でプリベーク(PB)を行なう。その後、g線、i線等の紫外線、KrFエキシマレーザー光、ArFエキシマレーザー光、X線、電子線等で露光をし、例えば、80℃〜140℃程度の条件でポストイクスポージャーベーク(PEB)を行なった後、現像し、レジストパターンを形成する。
次いで、レジストパターン上に微細パターン形成用樹脂組成物の被膜を形成する。例えば、上記レジストパターンが形成された基板に、スピンコート等の従来公知の方法により上記本発明の微細パターン形成用樹脂組成物を塗布する。スピンコートのみで溶剤が揮散し被覆膜を形成する場合がある。また、必要に応じて、例えば、80℃〜110℃程度、60〜120秒程度のプリベーク(PB)し、微細パターン形成用樹脂組成物の被覆膜を形成する。
更に、前記被膜が形成された基板を熱処理する。熱処理により、フォトレジスト由来の酸がフォトレジストとの界面から微細パターン形成用樹脂組成物層中に拡散し、微細パターン形成用樹脂組成物は架橋反応を起こす。フォトレジスト界面からの架橋反応状態は、微細パターン形成用樹脂組成物の材料、使用されるフォトレジスト、ベーク処理温度及びベーク処理時間により決定される。熱処理温度及び熱処理時間は、通常90℃〜160℃程度の温度で、60〜120秒程度で行なわれる。
最後に、アルカリ水溶液により前記被膜を除去し、水で洗浄する。具体的には、微細パターン形成用樹脂組成物の被覆膜を、テトラメチルアンモニウムヒドロキシド(TMAH)等のアルカリ水溶液等により現像処理(例えば、60〜120秒程度)して、未架橋の微細パターン形成用樹脂組成物の被覆膜を溶解させて除去する。最後に水で洗浄処理することにより、ホールパターンや楕円パターン、トレンチパターン等を微細化することができる。
表1に示す割合で、水酸基を含有する樹脂、架橋成分、アルコール溶媒及びその他添加剤を加え、攪拌羽根を使用して3時間攪拌した(100rpm)のち、孔径100nmのフィルターを使用して濾過して、微細パターン形成用樹脂組成物を得た。
E−1:エチレングリコールジグリシジルエーテル(エポキシ基2個、商品名:エポライト40E、共栄社化学社製)
E−2:トリメチロールエタントリグリシジルエーテル(エポキシ基3個、商品名:エポライト100MF、共栄社化学社製)
E−3:ジメチロールプロパンジグリシジルエーテル(エポキシ基2個、商品名:エポライト1500NP、共栄社化学社製)
E−4:ペンタエリスリトールテトラグリシジルエーテル(エポキシ基4個、商品名:デナコールEX−411、ナガセケムテックス社製)
[架橋成分Ib]
E−5:ジペンタエリスリトールヘキサキス(3−エチルー3−オキセタニルメチル)エーテル(オキセタニル基6個)
C−1:メトシキメチル化メラミン樹脂(商品名:サイメル300、日本サイテックス社製)
C−2:メトシキメチル化メラミン樹脂(商品名:サイメル325、日本サイテックス社製)
S−1:1−ブタノール
S−2:水
上記評価用基板A上に、表1記載の微細パターン形成用樹脂組成物をCLEAN TRACK ACT8にてスピンコート、ベーク(100℃、90秒)により、膜厚300nm塗布した後、レジストパターンと微細パターン形成用樹脂組成物を反応させるため、155℃、90秒の条件でベークを行なった。ついで、同CLEAN TRACK ACT8のLDノズルにて2.38重量%TMAH水溶液を現像液としてパドル現像(60秒間)、超純水にてリンス、次いで4000rpmで15秒間振り切りによりスピンドライし、評価用基板Bを得た。
収縮率(%)=[(φ1−φ2)/φ1]×100
φ1:評価用基板Aのレジストパターンホール径(nm)
φ2:評価用基板Bのレジストパターンホール径(nm)
Claims (5)
- 水酸基を含有する樹脂と、架橋成分と、アルコール及び全溶媒に対して10重量%以下の水を含むアルコール系溶媒と、を含有する微細パターン形成用樹脂組成物であって、
前記架橋成分として、その分子内にエポキシ基を2個以上有する化合物を含有する微細パターン形成用樹脂組成物。 - 前記アルコールが、炭素数1〜8の1価アルコールである請求項1に記載の微細パターン形成用樹脂組成物。
- 水酸基を含有する樹脂と、架橋成分と、アルコール及び全溶媒に対して10重量%以下の水を含むアルコール系溶媒と、を含有する微細パターン形成用樹脂組成物であって、
前記架橋成分として、その分子内にオキセタニル基を2個以上有する化合物、及び下記式(1)で表される基を含む化合物を含有する微細パターン形成用樹脂組成物。
- 基板上にレジストパターンを形成するパターン形成工程と、このレジストパターン上に微細パターン形成用樹脂組成物の被膜を形成する被膜形成工程と、前記被膜が形成された基板を熱処理する熱処理工程と、アルカリ水溶液により前記被膜を除去し、水で洗浄する被膜除去工程とを含む微細パターン形成方法において、
前記微細パターン形成用樹脂組成物として、請求項1〜4のいずれか一項に記載の微細パターン形成用樹脂組成物を用いる微細パターン形成方法。
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WO2010061833A1 (ja) * | 2008-11-28 | 2010-06-03 | Jsr株式会社 | レジストパターンコーティング剤およびレジストパターン形成方法 |
WO2018230725A1 (ja) * | 2017-06-15 | 2018-12-20 | 学校法人東京理科大学 | 硬化性樹脂組成物、硬化物、並びに凹凸構造体及びその製造方法 |
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WO2008114644A1 (ja) * | 2007-03-16 | 2008-09-25 | Jsr Corporation | レジストパターン形成方法及びそれに用いるレジストパターン不溶化樹脂組成物 |
WO2010061833A1 (ja) * | 2008-11-28 | 2010-06-03 | Jsr株式会社 | レジストパターンコーティング剤およびレジストパターン形成方法 |
JPWO2010061833A1 (ja) * | 2008-11-28 | 2012-04-26 | Jsr株式会社 | レジストパターンコーティング剤およびレジストパターン形成方法 |
WO2018230725A1 (ja) * | 2017-06-15 | 2018-12-20 | 学校法人東京理科大学 | 硬化性樹脂組成物、硬化物、並びに凹凸構造体及びその製造方法 |
JPWO2018230725A1 (ja) * | 2017-06-15 | 2020-06-25 | 学校法人東京理科大学 | 硬化性樹脂組成物、硬化物、並びに凹凸構造体及びその製造方法 |
JP7406193B2 (ja) | 2017-06-15 | 2023-12-27 | 学校法人東京理科大学 | ナノインプリント用硬化性樹脂組成物、硬化物の製造方法、及び凹凸構造体の製造方法 |
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