JP2008044328A - Manufacturing method of fine mold - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To manufacture a fine mold having high hardness and enhanced in the smoothness of an element surface which constitutes unevenness. <P>SOLUTION: The manufacturing method of the fine mold is constituted so that an uneven region is formed to the surface of a sacrifice mold, a film for constituting the molding surface of the fine mold is deposited on the uneven region, a base film, which is lower than the film in hardness and constitutes the internal layer of the fine mold is deposited on the film so as to become thicker than the film and the molding surface of the fine mold is formed by removing the sacrifice mold. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for producing a fine mold.

  Conventionally, micro-molding technology such as hot embossing and nano-imprinting using micro-molding mold as a technology to form high-aspect and fine irregularities at low cost compared with the case of forming lithographic irregularities by photolithography or direct electron beam It has been known. Various techniques related to film formation have been developed in order to produce a high-functional fine mold that meets the complex requirements such as high hardness, high thermal conductivity, and high durability at a low cost.

  Patent Document 1 discloses a method for improving the corrosion resistance of a fine mold by forming a film made of nitride of titanium or chromium on a base made of nickel formed by electroless plating by PVD.

  Patent Document 2 discloses a method of forming a film made of metal, ceramics, or a composite material thereof on a fine mold by thermal spraying.

Patent Document 3 discloses a method of forming a hard film on a fine mold by plasma carburizing or plasma nitriding on the surface of a silicon substrate.
Japanese Patent Laid-Open No. 11-105039 JP-A-2005-47148 JP 2004-148494 A

  However, the method disclosed in Patent Document 1 has the following problems. When a film is formed on the base by PVD, the surface has low smoothness and the corners are likely to be rounded, so that the resolution is lower than that of the photoresist mask, and overhangs are formed on the side walls of the protrusions, making it difficult to release. In addition, PVD has a higher processing temperature than wet plating. Therefore, when a film is formed on the base by PVD, thermal stress is applied to the interface between the base and the film due to the difference in thermal expansion coefficient between the base material and the film material. Arise. This thermal stress leads to bending of the fine mold and peeling of the film. Further, PVD is inferior in film adhesion to CVD, so that the film is easily peeled off from the base. In addition, since nickel and chromium have low thermal conductivity as metal, shape spots due to shrinkage spots are likely to occur in the work to be heat-formed.

  Further, the method disclosed in Patent Document 2 has the following problems. Since the surface is roughened by blasting for increasing the effective adhesion area in the pre-spraying process, and the film thickness of the sprayed film is as thick as 25 μm or more, miniaturization is difficult. This method also causes the problem of mold mold warping and film peeling due to the difference in thermal expansion coefficient between the film material and the base material. Further, when a film is formed by ceramics, chipping is likely to occur because of low toughness.

  The method disclosed in Patent Document 3 has the following problems. Since silicon carbide, silicon nitride, and silicon carbonitride have lower toughness than metals, a molding mold using these as a film tends to be chipped. In addition, since silicon carbide, silicon nitride, and silicon carbonitride have a lower thermal conductivity than metals, there is a problem in that molding molds using these as coating materials are likely to have uneven shapes on the workpiece to be heat-molded. is there. Further, since the film forming rate is slow in both the plasma carburizing process and the plasma nitriding process, it is difficult to form a thick film by these processes.

  An object of the present invention is to produce a fine mold having high hardness and high smoothness of the element surfaces constituting the irregularities.

(1) A film having fine irregularities can be formed by forming a film by deposition. In general, the higher the hardness, the higher the accumulated stress during deposition, and it is difficult to form a thick film with high hardness by deposition.
Therefore, a manufacturing method of a fine mold for achieving the above object is to form an uneven area on the surface of the sacrificial mold, deposit a film constituting the molding surface of the fine mold on the uneven area, and Depositing a base film having a lower hardness than the film and constituting an inner layer of the fine mold, and forming the molding surface of the fine mold by removing the sacrificial mold. .

  Definitions of terms used to specify this manufacturing method are as follows. The sacrificial mold is a master mold for forming a fine mold by transfer. The molding surface of the fine molding mold is a surface for forming a specific shape on the workpiece to be molded and is a surface that directly contacts the workpiece to be molded. The film is a single-layer or multi-layer film on the surface layer side of the fine mold relative to the base film. The base film is a single-layer or multi-layer film on the deep layer side of the fine mold relative to the film.

  According to this manufacturing method, since a film having a higher hardness than the base film as the base film is deposited thinner than the base film, a fine mold having a high hardness can be manufactured. According to this manufacturing method, since a film is deposited on the uneven area of the sacrificial mold, the smoothness and shape of the molding surface constituted by the film are determined by the smoothness and shape of the element surface constituting the uneven area of the sacrificial mold. . Various techniques have been established that can make the element surfaces constituting the concavo-convex region of the sacrificial mold smoother than the surface of the film formed by PVD or thermal spraying. Therefore, according to this manufacturing method, the unevenness | corrugation with high smoothness of an element surface can be formed in the shaping | molding surface of a fine mold.

  (2) In the method for producing a fine mold for achieving the above object, fine irregularities for obtaining an anchor effect may be formed on the surface of the film together with or after the film is deposited. Good.

  By forming fine irregularities for obtaining the anchor effect on the surface of the film, the adhesion between the film and the base film can be enhanced. In addition, the surface of a film | membrane here corresponds to the back surface of the surface of the film | membrane which comprises the shaping | molding surface of a fine mold. The fine irregularities for obtaining the anchor effect can be formed by adjusting the processing conditions for depositing the film, and can also be formed by annealing the film after depositing the film or finely processing the surface of the film. Can do. For example, the film morphology can be roughly controlled by controlling the film formation conditions such as plating current density, concentration, bath composition, bath temperature, additive type, plasma process bias voltage, temperature, and annealing temperature. . For example, after the film is formed, the surface of the film can be microscopically roughened by, for example, wet etching or ion bombardment.

  (3) In the method of manufacturing a fine mold for achieving the above object, when depositing the film, a refractory metal or a compound of a refractory metal may be deposited in the uneven region.

Definitions of terms used to specify this manufacturing method are as follows. The high melting point metal is W, Ta, Ti, Mo, Cr or the like having a relatively high melting point among metals. The refractory metal compound is a compound of these refractory metal elements and other elements.
Both refractory metals and refractory metal compounds have high hardness among metals or metal compounds. Further, both high melting point metals and high melting point metal compounds have higher toughness than ceramics and the like. Therefore, according to this manufacturing method, a fine mold having high hardness and toughness can be manufactured.

  (4) In the method of manufacturing a fine mold for achieving the above object, the refractory metal compound may be a refractory metal nitride or oxynitride.

  Nitride and oxynitride of refractory metals are particularly hard among metals or metal compounds. Further, refractory metal nitrides, oxynitrides, and refractory metal compounds have higher toughness than ceramics and the like. Therefore, according to this manufacturing method, it is possible to manufacture a fine mold having high hardness and toughness.

  (5) In the method for manufacturing a fine mold for achieving the above object, when depositing the coating, TiN may be deposited on the uneven region, and when forming the base film, W is coated with the coating. It may be deposited on the surface.

  The adhesion between the TiN film and the W film formed by precipitation is high. Therefore, according to this manufacturing method, it is possible to manufacture a fine mold having high film peeling resistance.

  (6) In the method for producing a fine mold for achieving the above object, W may be deposited by a CVD method when depositing the film.

  Since the crystal structure developed in a columnar form of W appears remarkably on the surface of the W film formed by the CVD method, the anchor effect on the base film is enhanced. Therefore, according to this manufacturing method, it is possible to manufacture a fine molding mold having high film peeling resistance.

  (7) In the method for producing a fine mold for achieving the above object, when depositing the base film, a metal having higher thermal conductivity than the film may be deposited on the surface of the film.

  According to this manufacturing method, it is difficult for temperature spots to occur on the molding surface of the fine molding mold, so that it is possible to manufacture a fine molding mold in which shape spots due to shrinkage spots are unlikely to occur on the heat-molded workpiece.

  (8) In the method for producing a fine mold for achieving the above object, when depositing the base film, a metal may be deposited on the surface of the film by wet plating.

  Wet plating has a lower processing temperature, a higher film deposition rate, and a thicker film can be formed at a lower cost than a method in which a film is formed by deposition of gas phase particles. Metals have higher thermal conductivity than ceramics. Therefore, according to this manufacturing method, it is possible to manufacture a micro-molding mold having a high thermal conductivity at a low cost because the film is hard and difficult to peel off.

(9) A sheet-like fine molding mold formed by stacking thin films is used in a state where the back surface is bonded to a flat and highly rigid plate. Also, the thicker the film, the more easily the film thickness becomes uneven due to the uneven deposition rate.
Therefore, in the method of manufacturing a fine mold for achieving the above object, the surface of the base film may be flattened after the base film is deposited.

  According to this manufacturing method, in order to flatten the surface of the base film after depositing the base film, a sheet-like micromolding mold is constituted by the film and the base film, and the micromolding mold is used while being joined to the plate. By doing so, the shape as designed can be formed on the workpiece to be molded.

(10) In the method for manufacturing a fine mold for achieving the above object, the uneven region may be formed on the surface of the sacrificial mold using a lithography technique.
The lithography technique refers to a technique for forming a photoresist mask by applying, exposing and developing a photoresist, and an etching technique using the photoresist mask. According to this manufacturing method, an uneven region with high smoothness can be formed on the surface of the sacrificial mold by using a lithography technique.

(11) The resolution of the photoresist mask is increasing year by year, and in RIE, it is possible to form unevenness having a side surface perpendicular to the surface to be processed of the workpiece and having a high aspect, and the smoothness of the element surfaces constituting the unevenness is increased. Get higher.
Therefore, in the method of manufacturing a fine mold for achieving the above object, the uneven region may be formed on the surface of the sacrificial mold by transferring a pattern of a photoresist mask onto a silicon wafer by RIE.

(12) A method of applying a photoresist so that the surface is smooth has been established. In the photoresist development technique, a method of forming a smooth side surface perpendicular to the coated surface of the photoresist at the boundary between the exposed region and the unexposed region has been established. A silicon wafer smoothing technique has also been established.
Therefore, in the method of manufacturing a fine mold for achieving the above object, the concave / convex region comprising the surface of the silicon wafer and the surface of the photoresist is formed by forming a photoresist pattern on the silicon wafer. Also good.

  In the claims, “to the top” means both “without an intermediate on the top” and “with an intermediate on the top” unless there is a technical impediment. To do. Further, the order of the operations described in the claims is not limited to the order of description as long as there is no technical obstruction factor, and may be executed at the same time, may be executed in the reverse order of the description order, or may be continuous. It does not have to be executed in order.

Embodiments of the present invention will be described below with reference to the accompanying drawings. Constituent elements corresponding to each embodiment are denoted by common reference numerals, and redundant description is omitted.
1. First Embodiment FIG. 1 is a cross-sectional view showing a first embodiment of a method for producing a fine mold according to the present invention.
First, as shown in FIG. 1A, a photoresist is applied to a single crystal Si wafer, pre-baked and cured, then exposed with a stepper, aligner, electron beam, etc., developed, and post-baked to form a photoresist mask 12 To do. The coating thickness of the photoresist is, for example, 100 μm. The pattern of the photoresist mask 12 is set according to the shape of the molding surface 19 of the fine mold 20 (see FIG. 1E). The scale of the pattern is, for example, a protrusion width of 20 μm and a recess width (W) of 20 μm.

By transferring the pattern of the photoresist mask 12 to the wafer by RIE, the sacrificial mold 10 having the uneven region 11 is formed. The etching gas is selected from, for example, CF ₄ , CH ₂ F ₂ , CH ₃ F, and the like. The end point control is, for example, 30 μm deep. Further, the side surface of the concave portion does not have to be a vertical surface as illustrated, and may be, for example, a tapered surface. By forming the concavo-convex region 11 of the sacrificial mold 10 by RIE, the smoothness of the element surface 13 constituting the concavo-convex region 11 is increased.

The material of the sacrificial mold 10 is not limited to a single crystal Si wafer, but may be any material as long as it can form the uneven region 11 constituted by the sufficiently smooth element surface 13 by etching. For example, SiN _x , SiO ₂ , amorphous Si, A substrate having a surface layer made of crystalline Si or the like may be used.

  Next, as shown in FIG. 1B, a surface layer film 16 and a deep layer film 14 made of metal are deposited on the uneven region 11 of the sacrificial mold 10. The surface layer film 16 and the deep layer film 14 are films that constitute the hard film of the fine mold 20 and are preferably composed of a refractory metal or a compound of a refractory metal, and particularly a nitride or oxynitride of a refractory metal. It is desirable to form a hard film with an object. Specifically, for example, as follows.

  First, TiN that also functions as a seed layer for the deep film 14 is deposited by sputtering to form the surface film 16. The total film thickness of the surface film 16 and the deep film 14 is preferably less than ½ of the width of the recess (W) so that the concave portion of the sacrificial mold 10 is not filled with the film alone. .5 μm. Before depositing TiN, an intermediate layer such as Ti may be deposited to a thickness of, for example, 0.1 μm to improve the adhesion. The composition of the surface layer film 16 may be TiON or TaN. The gas used for sputtering may be an inert gas or a reactive gas. The surface film 16 may be deposited by CVD instead of sputtering.

  After depositing the surface layer film 16, the metal is deposited on the surface of the surface layer film 16 to form the deep layer film 14 having a thickness of 2 μm. Specifically, W is deposited on the surface of the surface layer film 16 by, for example, a CVD method. When W is deposited by CVD, the crystal structure grows in a columnar shape. For this reason, the fine unevenness | corrugation which brings an anchor effect is formed in the surface 17 (refer FIG. 1D) of the deep film 14 which consists of W deposited by CVD. This fine unevenness greatly improves the adhesion between the base film 18 (see FIG. 1C) to be stacked next and the deep film 14.

  The material composition of the deep film 14 is appropriately selected depending on the function required for the fine mold 20 such as Ta, Ti, Mo, Cu, TiN, TaN, MoN, NiFe and the like. Further, the method of depositing the deep film 14 may be electrolytic plating or electroless plating. When depositing the deep film 14 by plating, fine irregularities that provide an anchor effect on the surface of the deep film 14 are formed by adjusting the current density, metal concentration, bath composition, bath temperature, type of additive, and the like. Is desirable.

  Further, after depositing the deep film 14, fine irregularities may be formed on the surface of the deep film 14 by etching the surface thereof. For example, when NiFe is deposited and then wet-etched with a ferric chloride aqueous solution, fine irregularities that provide an anchor effect can be formed on the surface of the deep film 14 made of NiFe.

  Next, as shown in FIG. 1C, a base film 18 is deposited on the deep film 14 to be thicker than the film. The base film 18 is formed, for example, by depositing Cu by electroless plating. Since the hardness of the fine mold 20 is almost determined by the surface film 16 and the deep film 14, the hardness of the base film 18 may be lower than that of the surface film 16 and the deep film 14. The film thickness of the base film 18 is set to a thickness that can ensure sufficient bending rigidity and breaking strength to facilitate handling of the sheet-like fine mold 20, and is set to 200 μm, for example. By configuring the base film 18 with a material having a low hardness, the stress is reduced, so that the base film 18 can be formed thick.

  When hot embossing or nanoimprinting is performed using the micro-molding mold 20 by using Cu or the like, which has a relatively high thermal conductivity among metals, as the material of the base film 18, the thermal conductivity of the film is low. Even if it is low, if the film is sufficiently thin, temperature spots are less likely to occur on the surface of the molding object.

  The material of the base film 18 can be appropriately selected according to the function required for the fine mold 20 such as Ni, NiP, NiW, NiCo, NiFe, NiMn, NiMo, Ni, and Cr in addition to Cu. Also, the formation method of the base film 18 may be appropriately selected according to the combination of materials constituting the laminated film, such as electroless plating, electrolytic plating, sputtering, CVD, MIM (Metal Injection Molding).

  Further, in order to correct the unevenness of the film thickness, pulse plating may be performed, or the surface of the base film 18 may be planarized by performing grinding or polishing after the base film 18 is deposited. By flattening the surface of the base film 18, when the sheet-like fine molding mold 20 is used while being joined to a plate, the surface of the molding object is caused by the uneven thickness of each film constituting the fine molding mold 20. Can prevent swells.

Finally, as shown in FIG. 1E, when the sacrificial mold 10 is removed to expose the surface film 16, the fine mold 20 is completed. Specifically, for example, by performing reactive dry etching using any gas of CF ₄ , CH ₂ F ₂ , and CH ₃ F, the sacrificial mold 10 made of a single crystal Si wafer is removed. After this, the surface layer film 16 may be selectively removed by etching.

  The fine mold 20 produced in this way has a hard film composed of the surface film 16 and the deep film 14. In addition, since the hard coating is made of metal, the hard coating of the fine mold 20 has higher toughness than when the hard coating is made of ceramics. For example, when the surface of the fine molding mold 20 is depressed due to the pressing of foreign matter mixed in during use of the fine molding mold 20, the surface shape of the foreign matter is transferred to the surface of the molding object thereafter, and the hard film If the toughness is low, chipping is likely to occur at the corners of the molding surface 19, but such a problem can be solved by using the fine molding mold 20 having a hard film with high toughness.

  Further, if a recent microfabrication technique is used, the element surface 13 of the uneven region 11 on the surface of the sacrificial mold 10 can be formed sufficiently smoothly, and therefore, it is configured by a film formed on the uneven region 11 of the sacrificial mold 10. The molding surface 19 of the fine mold 20 to be formed is a sufficiently smooth surface that hardly deforms or destroys the molding object at the time of mold release. In addition, since the shape of the molding surface of the fine mold 20 is determined by the shape of the uneven region 11 on the surface of the sacrificial mold 10, it can be controlled with an accuracy equivalent to the patterning accuracy of the photoresist mask 12. Further, the same can be said even when the uneven region 11 of the sacrificial mold 10 is formed by the ion beam drawing method without using the photoresist mask 12.

  Further, as described above, when the fine unevenness is formed on the surface 17 of the hard film, the adhesion between the hard film and the base film 18 is increased, and the hard film is difficult to peel from the base film 18 due to stress or thermal stress. . In particular, when the hardness of the film is high, the stress becomes high, so it is important to increase the adhesion between the film and the base film 18. Furthermore, fine irregularities are also formed on the surface 15 (see FIG. 1D) of the surface layer film 16 by adjusting the deposition method of the surface layer film 16, the processing conditions during the deposition, and the combination of materials of the surface layer film 16 and the deep layer film 14. Therefore, the surface film 16 is prevented from peeling off from the deep film 14. For example, when the surface film 16 is made of sputtered TiN and the deep film 14 is made of W, the adhesion of the surface film 16 becomes sufficiently high. In addition, since the hard coating and the base film 18 are both made of metal, the fine mold 20 has a structure in which peeling due to thermal stress at the interface hardly occurs.

Further, by forming a hard film composed of the surface film 16 and the deep film 14 thinly and forming the base film 18 thick, sufficient hardness, flexural rigidity, and breaking strength can be obtained while reducing the stress of the hard film. The micromolding mold 20 having both can be manufactured.
Further, if the base film 18 is formed by a wet plating method, the manufacturing cost of the fine mold 20 can be suppressed even when the base film 18 is made thicker than when the base film 18 is formed by CVD or the like.

2. 2nd Embodiment FIG. 2: is sectional drawing which shows 2nd embodiment of the manufacturing method of the fine mold according to this invention. The second embodiment is different from the first embodiment in the method for forming the sacrificial mold 10.

  First, as shown in FIG. 2A, a single-crystal Si wafer 22 is coated with a photoresist, pre-baked, cured, exposed with a stepper, aligner, electron beam, etc., developed, and post-baked. A pattern of the photoresist 21 that forms the uneven region 11 is formed together with the wafer 22.

Thereafter, as shown in FIG. 2B, a surface film 16 and a deep film 14 are formed. Further, the base film 18 is formed as shown in FIG. 2C, and finally the sacrificial mold 10 is removed as shown in FIG. 2E, whereby the fine mold 30 is completed. When removing the sacrificial mold 10, the single crystal Si wafer 22 is removed by performing reactive dry etching using any gas of CF ₄ , CH ₂ F ₂ , and CH ₃ F, and NMP (N · N The photoresist 21 is removed with methyl 2, pyrrolidone) or acetone. The sacrificial mold 10 may be removed by using O ₂ plasma or an amine-based organic stripping solution in combination.

  The side surface 23 of the photoresist 21 formed by the photolithography technique and the surface 24 of the photoresist 21 are sufficiently smooth as compared with the surface of the film formed by PVD. Also, the surface 25 of the single crystal Si wafer 22 is sufficiently smooth compared to the surface of the film formed by PVD. The smoothness of the element surfaces 26, 27, and 28 constituting the molding surface 19 of the fine mold 30 is determined by the smoothness of the side surface 23 of the photoresist 21, the surface 25 of the single crystal Si wafer 22, and the surface 24 of the photoresist 21, respectively. . Therefore, also according to the present embodiment, the molding surface 19 of the fine molding mold 30 can be constituted by the smooth element surfaces 26, 27, and 28.

3. 3rd Embodiment FIG. 3: is sectional drawing which shows 3rd embodiment of the manufacturing method of the fine mold according to this invention.
First, as shown in FIG. 3A, the sacrificial mold 10 is formed as in the first embodiment.

Next, as shown in FIG. 3B, a film 16 and a base film 30 are formed by depositing a metal on the concavo-convex region 11 of the sacrificial mold 10.
The film 16 is substantially the same as the surface film 16 of the first embodiment. As in the first embodiment, it is desirable to form fine irregularities on the surface 17 (see FIG. 3C) of the film 16.
The base film 30 is formed by depositing a metal thicker than the film 16 (for example, 50 μm) on the film 16. Specifically, W is deposited on the surface of the surface layer film 16 by, for example, a CVD method. The material composition of the base film 30 is appropriately selected depending on the function required for the fine mold 20, such as Ta, Ti, Mo, Cu, TiN, TaN, MoN, and NiFe. The method for depositing the base film 30 may be electrolytic plating or electroless plating.

  Next, the surface of the base film 30 may be ground or polished as shown in FIG. 3D.

  Finally, the sacrifice mold 10 is removed to complete the fine mold 32.

4). 4th Embodiment FIG. 4: is sectional drawing which shows 4th embodiment of the manufacturing method of the fine mold according to this invention.
First, the surface film 16 and the deep film 14 are formed according to the third embodiment (see FIGS. 4A and 4B).

  Next, as shown in FIG. 4C, a thick base film 40 (for example, 200 μm) is formed on the deep film 14 via the seed layer 41. When hot embossing or nanoimprinting is performed using the micro-molding mold 42 by using Cu or the like having a relatively high thermal conductivity among metals as the material of the base film 40, the thermal conductivity of the film is low. Even if it is low, if the film is sufficiently thin, temperature spots are less likely to occur on the surface of the molding object.

The seed layer 41 is made of Cu deposited by, for example, about 0.5 μm using sputtering. Before depositing Cu, an intermediate layer of Cr, Ti or the like may be deposited by about 0.1 μm to improve the adhesion.
The material of the base film 40 can be appropriately selected according to the function required for the fine mold 42 such as Ni, NiP, NiW, NiCo, NiFe, NiMn, NiMo, Ni, and Cr in addition to Cu. Moreover, the formation method of the deep film 14 may be appropriately selected according to the combination of materials constituting the laminated film, such as electroless plating, electrolytic plating, sputtering, CVD, MIM, and the like.

  Next, as shown in FIG. 4D, the surface of the base film 40 is planarized.

Finally, when the sacrificial mold 10 is removed as shown in FIG. 4E, the fine mold 42 is completed. The surface film 16 may be removed. For example, the surface film 16 made of TiNx may be removed by ion etching using a reactive gas such as CF ₄ or Cl _2, or the surface film 16 may be removed using ethylenediaminetetraacetic acid or sulfuric acid.

5. 5th Embodiment FIG. 5: is sectional drawing which shows 5th embodiment of the manufacturing method of the fine shaping | molding mold by this invention. 5th Embodiment of this invention is a manufacturing method of the fine shaping | molding mold 54 by which the shaping | molding surface 19 is comprised by the smooth curved surface.

  First, as shown in FIG. 5A, a photoresist mask 50 having a gentle concave surface is formed on a substrate 51. As a material of the substrate 51, Pyrex glass (Pyrex is a registered trademark), quartz, SiNx, alumina, AiNx, resin, SUS, Al, or the like can be used. In order to form a gentle recess on the surface of the photoresist mask 50, the photoresist is exposed using a transmission mask (so-called gray mask) whose light transmittance changes continuously. The surface shape of the photoresist mask 50 is designed according to the shape of the molding surface 19 of the fine mold 54 and the etching selectivity between the photoresist mask 50 and the substrate 51.

Next, as shown in FIG. 5B, when the surface shape of the photoresist mask 50 is transferred to the substrate 51 by RIE, a sacrificial mold 52 having a gentle uneven area 11 on the surface can be formed. At this time, if the selection ratio of the photoresist mask 50 and the substrate 51 is controlled to 1: 1 by using, for example, a mixed gas of CF ₄ and O ₂ and controlling the flow rate of O ₂ , the surface shape of the photoresist mask 50 Can be transferred to the substrate 51 as it is.

  Next, as shown in FIG. 5C, the film 16 and the base film 30 are deposited on the sacrificial mold 52. The material and the film forming method of the film 16 and the base film 30 are the same as those in other embodiments.

  Next, as shown in FIG. 5D, the surface of the base film 30 is planarized by polishing or grinding.

  Finally, when the sacrificial mold 52 is removed as shown in FIG. 5E, a fine mold 54 is completed.

  Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. is there. For example, in the manufacturing process described above, the film composition, the film forming method, and the like are appropriately selected according to the required function, the combination of film materials, the film thickness, and the like, and are not particularly limited. Specifically, even if the concave / convex region of the sacrificial mold is formed by press processing (nanoimprint or hot embossing) of the resin substrate, the concave / convex region formed of the element surface having high smoothness can be formed. Moreover, you may form the uneven | corrugated area | region of a sacrificial mold by machining, such as cutting of a glass substrate and sandblasting.

Sectional drawing concerning 1st embodiment of this invention. Sectional drawing concerning 2nd embodiment of this invention. Sectional drawing concerning 3rd embodiment of this invention. Sectional drawing concerning 4th embodiment of this invention. Sectional drawing concerning 5th embodiment of this invention.

Explanation of symbols

10: sacrificial mold, 11: concavo-convex region, 12: photoresist mask, 13: element surface, 14: deep film, 16: surface film, film, 18: base film, 19: molding surface, 20: fine molding mold, 21 : Photoresist, 26: Element surface, 30: Fine mold, 30: Base film, 32: Fine mold, 40: Base film, 41: Seed layer, 42: Fine mold, 42: Base film 40: Fine mold Mold: 50: Photoresist mask, 51: Substrate, 52: Sacrificial mold, 54: Fine mold

Claims (12)

Form an uneven area on the surface of the sacrificial mold,
Depositing a film constituting the molding surface of the fine molding mold on the uneven area;
Depositing a base film constituting the inner layer of the micro-molding mold having a lower hardness than the film on the film to be thicker than the film,
Forming the molding surface of the fine molding mold by removing the sacrificial mold;
The manufacturing method of the fine mold which contains this. Fine irregularities for obtaining an anchor effect are formed on the surface of the film together with or after the film is deposited.
The manufacturing method of the fine mold according to claim 1. When depositing the film, a refractory metal or a compound of a refractory metal is deposited on the uneven region,
The manufacturing method of the fine mold according to claim 1 or 2. The refractory metal compound is a refractory metal nitride or oxynitride,
The manufacturing method of the fine mold according to claim 3. When depositing the film, TiN is deposited on the uneven region,
When forming the base film, W is deposited on the surface of the film.
The manufacturing method of the fine mold according to claim 4. When depositing the film, W is deposited by the CVD method.
The manufacturing method of the fine mold according to claim 4. When depositing the base film, a metal having a higher thermal conductivity than the film is deposited on the surface of the film.
The manufacturing method of the fine shaping | molding mold as described in any one of Claims 1-6. When depositing the base film, deposit metal on the surface of the film by wet plating,
The manufacturing method of the fine shaping | molding mold as described in any one of Claims 1-7. Planarizing the surface of the base film after depositing the base film;
The manufacturing method of the fine shaping | molding mold as described in any one of Claims 1-8. Forming the uneven region on the surface of the sacrificial mold using a lithography technique;
The manufacturing method of the fine shaping | molding mold as described in any one of Claims 1-9. Forming the concavo-convex region on the surface of the sacrificial mold by transferring a pattern of a photoresist mask to a silicon wafer by RIE;
The manufacturing method of the fine shaping | molding mold as described in any one of Claims 1-10. Forming the concavo-convex region comprising the surface of the silicon wafer and the surface of the photoresist by forming a photoresist pattern on the silicon wafer;
The manufacturing method of the fine shaping | molding mold as described in any one of Claims 1-10.

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