JP2008042039A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2008042039A
JP2008042039A JP2006216324A JP2006216324A JP2008042039A JP 2008042039 A JP2008042039 A JP 2008042039A JP 2006216324 A JP2006216324 A JP 2006216324A JP 2006216324 A JP2006216324 A JP 2006216324A JP 2008042039 A JP2008042039 A JP 2008042039A
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electrode plate
lead frame
semiconductor device
unit
semiconductor chip
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JP4984730B2 (en
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Yuji Iizuka
祐二 飯塚
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Fuji Electric Co Ltd
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Fuji Electric Holdings Ltd
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To improve the wiring structure such that high reliability can be ensured by avoiding concentration of residual strain on the joint of a wiring member, when the wiring member is divided into two components and bonded between a semiconductor chip and an insulating substrate. <P>SOLUTION: A wiring member is divided into two components of an electrode plate 7 functioning as a heat spreader and a lead frame 8, the electrode plate 7 is soldered to the major surface of a semiconductor chip 3 under a state not bonded to the lead frame 8, the bonding end of the lead frame 8 is superimposed on a part extending sideward from the periphery of the electrode plate 7, and then the end is locally heated and spot-welded by laser welding, electron beam welding, or the like. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、パワー半導体モジュール，スイッチングＩＣなどを対象とする半導体装置に関する。   The present invention relates to a semiconductor device intended for a power semiconductor module, a switching IC and the like.

昨今ではパワー半導体モジュールの小型，大容量化が進み、これに伴いパワー半導体モジュールに搭載するパワー半導体チップ（例えば、ＩＧＢＴ（Insulated Gate Bipolar Transistor））は高い電流密度で通電使用されることから、その放熱対策が重要課題となっている。
すなわち、ＩＧＢＴなどのパワー半導体デバイスでは、半導体チップの接合部温度Ｔjに上限保証温度が規定されているのに対して、放熱用ベース（銅ベース板）に絶縁基板を介して半導体チップをマウントした片面冷却方式では、半導体チップの上面側がパッケージ内に充填した封止樹脂で封止されているのでチップ上面側からの放熱は殆ど期待できない。このために半導体チップの小型,大電流化に伴い発熱密度が増大すると、半導体チップの上面電極に接続する配線リードとしてアルミワイヤをボンディングした在来の配線構造では、チップの接合部温度を上限保証温度以下に抑えることが困難となるほか、アルミワイヤのジュール発熱も加わってワイヤ溶断のおそれもあってパワーサイクル耐量の低下が懸念される。 In recent years, power semiconductor modules have been reduced in size and capacity, and power semiconductor chips (for example, IGBTs (Insulated Gate Bipolar Transistors)) mounted on power semiconductor modules are used with high current density. Heat dissipation measures are an important issue.
That is, in a power semiconductor device such as an IGBT, the upper limit guaranteed temperature is prescribed for the junction temperature Tj of the semiconductor chip, whereas the semiconductor chip is mounted on the heat dissipation base (copper base plate) via the insulating substrate. In the single-sided cooling method, since the upper surface side of the semiconductor chip is sealed with a sealing resin filled in the package, almost no heat dissipation from the chip upper surface side can be expected. For this reason, when the heat generation density increases as the semiconductor chip becomes smaller and the current increases, the upper limit of the chip junction temperature is guaranteed in the conventional wiring structure in which an aluminum wire is bonded as the wiring lead connected to the upper electrode of the semiconductor chip. In addition to being difficult to keep below the temperature, there is a concern that the power cycle resistance may be reduced due to the possibility of wire fusing due to the Joule heat generation of the aluminum wire.

一方、半導体チップの上面からの放熱性を高めるための手段として、前記のアルミワイヤに代えてストラップ状の金属箔，あるいはリードフレームを半導体チップの上面主電極にろう付け（通常ははんだ付け）し、この金属箔，リードフレームを伝熱経路として半導体チップの発生熱をチップ上面側から絶縁基板に放熱させるようにしたモジュール構造が知られている（例えば、特許文献１参照）。   On the other hand, as a means for improving the heat radiation from the upper surface of the semiconductor chip, a strap-like metal foil or lead frame is brazed (usually soldered) to the upper main electrode of the semiconductor chip instead of the aluminum wire. A module structure is known in which heat generated by a semiconductor chip is radiated from an upper surface side of a chip to an insulating substrate using the metal foil and the lead frame as a heat transfer path (see, for example, Patent Document 1).

次に、ＩＧＢＴモジュールを例に、前記特許文献１に開示されているモジュール組立構造を図７に示す。図において、１は放熱用銅ベース、２はセラミックス基板２ａの表，裏両面に導体パターン２ｂ，２ｃを形成して銅ベース１の上に搭載した絶縁基板（例えば、Direct Copper Bonding基板）、３は絶縁基板２の導体パターン２ｂにマウントした半導体チップ(ＩＧＢＴ)、４は半導体チップ３の上面電極（エミッタ電極）と絶縁基板２の導体パターン２ａとの間に跨がって接続した配線リード（両端にブロック状の接合脚部を形成した導体片）、５は外囲樹脂ケース、６は銅ベース１に伝熱結合した放熱フィン付きのヒートシンクであり、銅ベース１／絶縁基板２，絶縁基板２／半導体チップ３，半導体チップ３／配線リード４，配線リード４／絶縁基板２の間がリフロー法により半田接合（ろう付け）されている。なお、半導体チップ３を湿気，塵などから保護するために、外囲樹脂ケース５の内部にはシリコーンゲルなどを充填して封止している。   Next, the module assembly structure disclosed in Patent Document 1 is shown in FIG. 7 by taking the IGBT module as an example. In the figure, 1 is a copper base for heat dissipation, 2 is an insulating substrate (for example, a Direct Copper Bonding substrate) mounted on the copper base 1 with conductor patterns 2b and 2c formed on the front and back surfaces of the ceramic substrate 2a, 3 Is a semiconductor chip (IGBT) mounted on the conductor pattern 2b of the insulating substrate 2, and 4 is a wiring lead (straddling between the upper surface electrode (emitter electrode) of the semiconductor chip 3 and the conductor pattern 2a of the insulating substrate 2 ( Conductor pieces having block-like joint legs formed at both ends) 5 is an enclosing resin case, 6 is a heat sink with heat-radiating fins thermally coupled to the copper base 1, copper base 1 / insulating substrate 2, insulating substrate 2 / Semiconductor chip 3, semiconductor chip 3 / wiring lead 4, wiring lead 4 / insulating substrate 2 are soldered (brazed) by a reflow method. In order to protect the semiconductor chip 3 from moisture, dust and the like, the outer resin case 5 is filled with silicone gel or the like and sealed.

上記のように、配線部材にヒートスプレッダの機能を持たせた配線リード４を採用することにより、この配線リード４を伝熱経路として半導体チップ３の発生熱を上面側からも絶縁基板２に効率よく放熱することができる。これにより、半導体チップ表面の温度勾配が小さくなり、温度サイクルなどの外的ストレスを受けて半田接合部に疲労破壊，クラックなどのダメージ発生を抑えて半導体装置の長期信頼性が向上する。
特開２００５−６４４４１号公報（図１） As described above, by adopting the wiring lead 4 having the heat spreader function in the wiring member, the heat generated by the semiconductor chip 3 can be efficiently applied to the insulating substrate 2 from the upper surface side by using the wiring lead 4 as a heat transfer path. It can dissipate heat. As a result, the temperature gradient on the surface of the semiconductor chip is reduced, and the long-term reliability of the semiconductor device is improved by suppressing the occurrence of damage such as fatigue breakdown and cracks in the solder joints due to external stress such as a temperature cycle.
Japanese Patent Laying-Open No. 2005-64441 (FIG. 1)

ところで、図７に示した従来構造の半導体装置では、半導体チップに接続する配線部材として異形の導体片で作られた配線リード４を採用しているが、このような異形形状の配線リード部品を製作するには量産加工性の面でコスト高となる。
かかる点、半導体チップ３の上面と絶縁基板２のとの間に跨がって接続するする配線部材を、ヒートスプレッダの機能を持たせて半導体チップ２の上面主電極面に接合した板状の電極板と、該電極板と絶縁基板との間に接続する箔状導体片（リードフレーム）との２部品に分けて製作すれば前記した異形の単体部品と比べて部品製造コストの大幅な低減が可能である。 Incidentally, in the semiconductor device having the conventional structure shown in FIG. 7, the wiring lead 4 made of a deformed conductor piece is employed as a wiring member connected to the semiconductor chip. Manufacturing is expensive in terms of mass production processability.
In this respect, a plate-like electrode in which a wiring member connected across the upper surface of the semiconductor chip 3 and the insulating substrate 2 is joined to the upper surface main electrode surface of the semiconductor chip 2 with the function of a heat spreader. If manufacturing is divided into two parts, a plate and a foil-like conductor piece (lead frame) connected between the electrode plate and the insulating substrate, the manufacturing cost of the parts can be greatly reduced as compared with the above-mentioned single-piece parts having irregular shapes. Is possible.

しかしながら、前記のように配線部材を２部品に分けた上で、リフロー法により各部品を一括してろう付けする場合には、その接合工程で配線部品間にずれが生じないように位置決め確保を要するほか、リフロー法ではモジュールの仮組立体を高温雰囲気炉に搬入して接合を行うことから、配線部材の熱変形に起因する残留歪みがろう付け接合部に生じ、特に半導体チップとの間の接合面に残留歪みが集中すると半導体装置の信頼性が低下するといった問題がある。   However, when the wiring member is divided into two parts as described above and each part is brazed together by the reflow method, it is necessary to ensure positioning so that no deviation occurs between the wiring parts in the joining process. In addition, in the reflow method, the module temporary assembly is carried into a high-temperature atmosphere furnace to perform bonding, so that residual strain due to thermal deformation of the wiring member occurs in the brazed joint, particularly between the semiconductor chip and When residual strain concentrates on the joint surface, there is a problem that the reliability of the semiconductor device is lowered.

本発明は上記の点に鑑みなされたものであり、前記のように配線部材を二つの部品に分けて半導体チップと絶縁基板の間に接合する際に、配線部材の接合部に集中する残留歪みを低減して高い信頼性が確保できるように配線，接合構造を改良し、併せてその配線構造を有効に生かして放熱性の高いモジュールを構築した半導体装置を提供することを目的とする。   The present invention has been made in view of the above points. As described above, when the wiring member is divided into two parts and bonded between the semiconductor chip and the insulating substrate, the residual strain concentrated on the bonding portion of the wiring member. It is an object of the present invention to provide a semiconductor device in which a wiring and a junction structure are improved so that high reliability can be ensured and a module with high heat dissipation is constructed by effectively utilizing the wiring structure.

上記目的を達成するために、本発明によれば、半導体チップの主面にヒートスプレッダとして機能する電極板をろう付けした上で、該電極板に配線部材としてのリードフレームを接合した半導体装置において、
第１の発明では、半導体チップの主面にろう付けした電極板の周縁一部をチップとの接合面域から側方に延在させ、該延長部に前記リードフレームの接合端部を重ね合わせて融接接合し（請求項１）、具体的には次記のような態様で構成する。
（１）前記電極板の周縁から側方に張り出した延長部を複数の条片に分岐し、各分岐条片ごとにリードフレームの接合端部との間をスポット融接する（請求項２）。
（２）前記した電極板の延長部に、リードフレームとの重ね合わせ位置を決める位置決め段部を形成する（請求項３）。 In order to achieve the above object, according to the present invention, in a semiconductor device in which an electrode plate functioning as a heat spreader is brazed to the main surface of a semiconductor chip, and then a lead frame as a wiring member is joined to the electrode plate.
In the first invention, a part of the periphery of the electrode plate brazed to the main surface of the semiconductor chip is extended laterally from the bonding surface area with the chip, and the bonding end portion of the lead frame is overlaid on the extension portion. (1), specifically, in the following manner.
(1) An extended portion projecting laterally from the periphery of the electrode plate is branched into a plurality of strips, and spot fusion is performed between each branch strip and a joining end portion of a lead frame.
(2) A positioning step portion for determining an overlapping position with the lead frame is formed on the extension portion of the electrode plate.

また、本発明の第２の発明では、半導体チップの主面にヒートスプレッダとして機能する電極板をろう付けした上で、該電極板に配線部材としてのリードフレームを接合した半導体装置において、
前記電極板の端面を露出して半導体チップおよびリードフレームの周域を樹脂封止し、かつリードフレームの一端を封止樹脂から外方に引出してモジュールの単位ユニットを構成した上で、該単位ユニットに対し、電極板端面に絶縁層を介して冷却体を伝熱的に組み付ける（請求項４）。 In the second invention of the present invention, in the semiconductor device in which an electrode plate functioning as a heat spreader is brazed to the main surface of the semiconductor chip, and then a lead frame as a wiring member is joined to the electrode plate.
A unit unit of the module is formed by exposing the end face of the electrode plate to resin-enclose the periphery of the semiconductor chip and the lead frame, and pulling out one end of the lead frame from the sealing resin to the outside. A cooling body is assembled to the unit in a heat transfer manner via an insulating layer on the end face of the electrode plate.

また、前記した単位ユニットの複数基を並置し、かつ各単位ユニットに共用の冷却体を組合せた上で、単位ユニットから引出したリードフレームを相互接続して所定回路のモジュールを構築する（請求項５）。
ここで、前記の冷却体は、冷媒を流す液冷式、ないし放熱フィンを備えた風冷式の冷却体で構成する（請求項６）。 Further, a plurality of the unit units described above are juxtaposed, and a common cooling body is combined with each unit unit, and then a lead frame drawn out from the unit unit is interconnected to construct a module of a predetermined circuit. 5).
Here, the cooling body is constituted by a liquid cooling type in which a refrigerant flows or an air cooling type cooling body provided with heat radiation fins (Claim 6).

上記した第１の発明による配線構造では、電極板とリードフレームとの間が融接されてない非接合の状態で半導体チップの主面に電極板をリフロー法でろう接し、その後に電極板の延長部とリードフレームとの間が室温状態で局所加熱により融接される。したがって、半導体チップの主面に電極板を接合するろう接工程では、電極板はリードフレームに拘束されることなしに自由に熱変形できるので半導体チップとの接合部に残留歪みが集中するのを低減できる。また、電極板の延長部とリードフレームとの間の融接は、室温での局所加熱により行うのでろう接合（リフロー法）のように電極板が大きな熱変形の影響を受けることがなく、これにより接合部への残留歪みの集中を低く抑えることができて配線の信頼性が向上する。   In the wiring structure according to the first invention described above, the electrode plate is brazed to the main surface of the semiconductor chip by the reflow method in a non-bonded state where the electrode plate and the lead frame are not fused, and then the electrode plate The extension portion and the lead frame are fused together by local heating at room temperature. Therefore, in the brazing process of joining the electrode plate to the main surface of the semiconductor chip, the electrode plate can be freely thermally deformed without being constrained by the lead frame, so that residual strain concentrates on the joint portion with the semiconductor chip. Can be reduced. In addition, fusion welding between the extension of the electrode plate and the lead frame is performed by local heating at room temperature, so that the electrode plate is not affected by large thermal deformation as in brazing (reflow method). As a result, the concentration of residual strain at the junction can be kept low, and the reliability of the wiring is improved.

この場合に、電極板の周縁から側方に張り出す延長部を複数の条片に分けて分岐形成することにより、個々に分岐して延在する条片の断面積が小さく、その伝熱抵抗が大きくなるので、リードフレームとのスポット融接地点から分岐条片を経て半導体チップとの接合部（ろう付け）に加わる伝熱量が低く抑えられ、これにより接合済みのろう付け部が再溶融するなどして劣化するおそれもない。   In this case, by dividing the extension part that protrudes laterally from the periphery of the electrode plate into a plurality of strips, the cross-sectional area of the strips that branch and extend individually is small, and the heat transfer resistance Therefore, the amount of heat transfer applied to the joint part (brazing) with the semiconductor chip through the branch strip from the spot fusion ground point with the lead frame is kept low, thereby remelting the joined brazed part. There is no risk of deterioration.

また、あらかじめ電極板の分岐条片に位置決め段部を形成しておくことで、リードフレームを所定の位置に重ね合わせて歩留よく融接を行うことができる。
一方、第２の発明によるモジュール組立構造によれば、前記の配線構造を生かして単位ユニットの封止樹脂から外方に露出させた電極板の端面に冷却体を組み付けるようにしたことにより、放熱性を大幅に向上できる。また、複数基のモジュール単位ユニットを並置して共用の冷却体と組合せた上で、各ユニットから引出したリードフレームを相互接続して所定の回路を構成することで、放熱性に優れた半導体モジュールをコンパクトに構築できる。 Further, by forming the positioning step portion on the branch strip of the electrode plate in advance, the lead frame can be superposed at a predetermined position and fusion welding can be performed with a high yield.
On the other hand, according to the module assembly structure of the second invention, the cooling body is assembled to the end face of the electrode plate exposed to the outside from the sealing resin of the unit unit by making use of the wiring structure described above. Can greatly improve performance. In addition, a plurality of module unit units are juxtaposed and combined with a common cooling body, and then a lead frame drawn from each unit is interconnected to form a predetermined circuit, thereby providing a semiconductor module with excellent heat dissipation Can be built compactly.

以下、本発明の実施の形態を図１〜図６に示す実施例に基づいて説明する。なお、実施例の図中で図７に対応する部材には同じ符号を付してその説明は省略する。   Hereinafter, embodiments of the present invention will be described based on examples shown in FIGS. In addition, in the figure of an Example, the same code | symbol is attached | subjected to the member corresponding to FIG. 7, and the description is abbreviate | omitted.

図１は本発明の請求項１に係わる実施例の組立構造図で、絶縁基板２の導体パターンにマウントした半導体チップ３の上面電極（エミッタ）３ａに接続する配線部材がＣｕ，もしくはＣｕ合金で作られた電極板７とリードフレーム８との２部品に分けて半導体チップ３と絶縁基板２の導体パターンとの間を配線されている。
ここで、電極板７はヒートスプレッダの機能を持たせて半導体チップ３の上面電極３ａに重ねてろう接合（例えば半田付け）し、その接合面域から左右側方に張り出した延長部をリードフレーム８に接合端部に重ね合わせてレーザ溶接法，電子ビーム溶接法などにより局所加熱して融接接合しており、９はろう接合部（半田接合部）、１０はスポット融接部を表している。 FIG. 1 is an assembly structure diagram of an embodiment according to claim 1 of the present invention. A wiring member connected to an upper surface electrode (emitter) 3a of a semiconductor chip 3 mounted on a conductor pattern of an insulating substrate 2 is made of Cu or Cu alloy. Wiring is made between the semiconductor chip 3 and the conductor pattern of the insulating substrate 2 by dividing into two parts of the produced electrode plate 7 and lead frame 8.
Here, the electrode plate 7 has the function of a heat spreader, and is soldered (for example, soldered) so as to overlap the upper surface electrode 3a of the semiconductor chip 3, and an extension portion protruding from the joint surface area to the left and right sides is leadframe 8. Are welded by local heating using a laser welding method, an electron beam welding method, or the like, and 9 is a solder joint (solder joint), and 10 is a spot weld. .

ここで、図示構造のモジュール組立工程では部品間の接合を次記のように二段階に分け行う。すなわち、金属ベース１の上に絶縁基板２，半導体チップ３，電極板７およびリードフレーム８を搭載して図示のような位置に仮組立した状態でリフロー炉（雰囲気加熱炉）に搬入し、電極板７／リードフレーム８間の接合部を除いて金属ベース１／絶縁基板２，絶縁基板２／半導体チップ３，半導体チップ／電極板７，絶縁基板２／リードフレーム８の間をろう付け（リフロー半田付け）する。その後に、リフロー炉から取り出しモジュール組立体を次の融接工程に移し、室温状態で電極板７とリードフレーム８との重ね合わせ部にレーザビーム，電子ビームなどを照射し、局所的に高温加熱して融接接合する。   Here, in the module assembling process of the illustrated structure, the parts are joined in two stages as described below. That is, the insulating substrate 2, the semiconductor chip 3, the electrode plate 7, and the lead frame 8 are mounted on the metal base 1, and are temporarily assembled at the positions shown in the figure, and are carried into a reflow furnace (atmosphere heating furnace). Brazing between the metal base 1 / insulating substrate 2, insulating substrate 2 / semiconductor chip 3, semiconductor chip / electrode plate 7 and insulating substrate 2 / lead frame 8 except for the joint between the plate 7 / lead frame 8 (reflow) Solder). Thereafter, the module assembly is taken out from the reflow furnace and transferred to the next fusion welding process. The overlapping portion of the electrode plate 7 and the lead frame 8 is irradiated with a laser beam, an electron beam, etc. at room temperature, and heated locally at a high temperature. And fusion welding.

このように、配線部品間の接合をろう接とスポット融接とに分けてモジュールを組立てることにより、リフロー工程での配線部材の熱変形による接合部への残留歪みの集中化を低減し、また電極板／リードフレーム間のスポット融接に伴うろう接合部の再溶融を回避して配線構造の信頼性を向上できる。   In this way, by assembling the module by dividing the joining between wiring components into brazing and spot fusion, the concentration of residual strain at the joint due to thermal deformation of the wiring member in the reflow process is reduced, and The reliability of the wiring structure can be improved by avoiding remelting of the brazed joint due to spot fusion between the electrode plate / lead frame.

次に、本発明の請求項２，３に対応する実施例を図２（ａ），（ｂ）で説明する。この実施例では、半導体チップ３の上面電極３ａにろう接合した電極板７の周縁から左右側方に張り出した延長部を複数条に枝分かれした分岐条片７ａで形成し、かつ各分岐条片７ａごとにリードフレーム８との重ね合わせ位置を規定する突起状の位置決め段部７ｂが形成されている。   Next, an embodiment corresponding to claims 2 and 3 of the present invention will be described with reference to FIGS. In this embodiment, an extended portion extending laterally from the periphery of the electrode plate 7 brazed to the upper surface electrode 3a of the semiconductor chip 3 is formed by a plurality of branch strips 7a, and each branch strip 7a. A protruding positioning step 7b that defines an overlapping position with the lead frame 8 is formed.

一方、リードフレーム８は電極板７との接合部分が額縁状をなしており、この額縁状の接合部分を前記した電極板７の位置決め段部７ｂに嵌め合わせて位置決め保持させる。そして、電極板７／リードフレーム８間をスポット融接する工程では、前記の各分岐条片ごとにリードフレーム８との重ね合わせ部をレーザ溶接法などによりスポット融接する。
このように電極板７の延長部を複数条に分けて分岐条片７ａを形成しておくことにより、各分岐条片７ｂの断面積が小さくなってスポット融接部１０から半導体チップとの間のろう接合部９に至る伝熱経路の熱抵抗が増加する。これにより、スポット融接地点の局所加熱によって半導体チップ３とのろう接合部９が高温になって再溶融するのを防ぐことができる。また、電極板７の延長部に前記の位置決め段部７ｂを形成しておくことにより、組立工程で電極板７とリードフレーム８の配線部品を所定位置に位置決めすることができる。 On the other hand, the lead frame 8 has a frame-shaped joint portion with the electrode plate 7, and the frame-shaped joint portion is fitted to the positioning step portion 7b of the electrode plate 7 to be positioned and held. In the step of spot welding between the electrode plate 7 and the lead frame 8, the overlapping portion with the lead frame 8 is spot-welded by a laser welding method or the like for each of the branch strips.
Thus, by dividing the extended portion of the electrode plate 7 into a plurality of strips and forming the branch strips 7a, the cross-sectional area of each branch strip 7b is reduced, and the space between the spot fusion welded portion 10 and the semiconductor chip is reduced. The thermal resistance of the heat transfer path leading to the solder joint 9 increases. As a result, it is possible to prevent the brazing joint portion 9 with the semiconductor chip 3 from being heated to a high temperature and remelted due to local heating of the spot fusion grounding point. Further, by forming the positioning step 7b on the extension of the electrode plate 7, the wiring components of the electrode plate 7 and the lead frame 8 can be positioned at predetermined positions in the assembly process.

次に、前記の配線構造を巧みに生かして構築した本発明の請求項４〜６によるモジュール組立構造を図３〜図６で説明する。
まず、半導体装置のモジュールを構築する単位ユニットの構造を図３に示す。すなわち、半導体チップ（ＩＧＢＴ）３の両主面（エミッタ，コレクタ）にそれぞれ電極板７を接合（ろう付け）し、さらにこの電極板７の延長部に外部導出端子となるリードフレーム８を接合（スポット融接）した上で、電極板７の端面を外方に露出させるようにして半導体チップ３，電極板７，リードフレーム８の周域を封止樹脂１１で封止し、さらに封止樹脂１１の凹部底面に露出している電極板７の端面に絶縁シート１２を被着して単位ユニット１３を構成する。また、リードフレーム８の一端は封止樹脂１１から側方に引出しておき、封止樹脂１１の四隅コーナー部には後記の冷却体を組み付ける際に用いる締結ボルトのボルト通し穴１１ａを開口しておく。 Next, a module assembly structure according to claims 4 to 6 of the present invention constructed by skillfully utilizing the wiring structure will be described with reference to FIGS.
First, the structure of a unit unit for constructing a module of a semiconductor device is shown in FIG. That is, the electrode plate 7 is joined (brazed) to both main surfaces (emitter and collector) of the semiconductor chip (IGBT) 3, and the lead frame 8 serving as an external lead-out terminal is joined to the extension of the electrode plate 7 ( After the spot fusion welding, the peripheral area of the semiconductor chip 3, the electrode plate 7, and the lead frame 8 is sealed with a sealing resin 11 so that the end face of the electrode plate 7 is exposed to the outside. The unit unit 13 is configured by attaching an insulating sheet 12 to the end face of the electrode plate 7 exposed at the bottom surface of the recess 11. Also, one end of the lead frame 8 is pulled out from the sealing resin 11 to the side, and bolt through holes 11a of fastening bolts used when assembling the cooling body described later are opened at the four corners of the sealing resin 11. deep.

なお、前記の絶縁シート１２は、後記のようにユニットに冷却体を組み付けた状態で電極板７と冷却体との間を電気的に絶縁しつつ半導体チップ３の発生熱を冷却体に伝熱させるためのもので、熱伝導性の高いエンジニアリングプラスチック，無機フィラー含有のプラスチック材，セラミック材などを選択して使用できる。
そして、前記の単位ユニット１３に対し、図４で示すようにユニット１３を挟んで上下に冷却体１４を組み付け、さらに伝熱体１５をユニット１３の凹部に嵌入してその底面に露呈している電極板７の端面に絶縁シート１２を介して重ね合わせた上で、ボルト１６により締結して一体に組み立てる。なお、図示の冷却体１４は冷媒通路１４ａを形成した液冷式の冷却体である。 The insulating sheet 12 transfers heat generated by the semiconductor chip 3 to the cooling body while electrically insulating the electrode plate 7 and the cooling body in a state where the cooling body is assembled to the unit as described later. For this purpose, engineering plastics with high thermal conductivity, plastic materials containing inorganic fillers, ceramic materials, etc. can be selected and used.
Then, as shown in FIG. 4, the cooling unit 14 is assembled to the unit unit 13 up and down with the unit 13 interposed therebetween, and the heat transfer body 15 is fitted into the recess of the unit 13 and exposed to the bottom surface. After being overlaid on the end face of the electrode plate 7 via an insulating sheet 12, the electrode plate 7 is fastened by a bolt 16 and assembled integrally. The illustrated cooling body 14 is a liquid cooling type cooling body in which a refrigerant passage 14a is formed.

上記の構成により、半導体チップ３の発熱は電極板７，絶縁シート１２，伝熱体１５を経て冷却体１４に伝熱し、冷却通路１４ａに通流する冷媒と熱交換して系外に効率よく除熱される。
次に、複数基の単位ユニット１３に冷却体１４を組合せて構築したモジュールの構成例を図５，図６に示す。ここで、図５の構成では複数基の単位ユニット１３を同一面上に並置し、かつこれらユニットを挟んで上下に共有の液冷式冷却体１４を組み付けた上で、各単位ユニット１３から側方に引き出したリードフレームの相互間を接続して所定の半導体回路（例えば３相インバータ回路）を形成している。 With the above configuration, the heat generated in the semiconductor chip 3 is transferred to the cooling body 14 through the electrode plate 7, the insulating sheet 12, and the heat transfer body 15, and is efficiently exchanged with the refrigerant flowing through the cooling passage 14a. Heat is removed.
Next, FIG. 5 and FIG. 6 show a configuration example of a module constructed by combining the cooling unit 14 with a plurality of unit units 13. Here, in the configuration of FIG. 5, a plurality of unit units 13 are juxtaposed on the same plane, and a common liquid-cooled cooling body 14 is assembled on the upper and lower sides with these units interposed therebetween, and then the side from each unit unit 13. A predetermined semiconductor circuit (for example, a three-phase inverter circuit) is formed by connecting the lead frames drawn out toward each other.

一方、図６の構成では、方形状ブロックになる液冷式冷却体１７の周囲を囲んで４枚の液冷式冷却体１４を図示のように組み合わせて配置し、冷却体１４と１７との間に図３に示した単位ユニット１３の複数基を並置した上で、図５で述べたと同様に各単位ユニット１３の間を相互接続して所定の半導体回路を形成する。さらに、冷却体１４の外周面には放熱フィン１４ｂを付設しておき、この組立体に風胴１８，および風胴１９に冷却風を送り込む冷却ファン（不図示）を組み合わせて半導体装置のモジュールを構築している。   On the other hand, in the configuration of FIG. 6, four liquid-cooled cooling bodies 14 are arranged in combination as shown in the drawing so as to surround the liquid-cooled cooling body 17 that becomes a rectangular block. A plurality of unit units 13 shown in FIG. 3 are arranged in parallel, and the unit units 13 are interconnected in the same manner as described in FIG. 5 to form a predetermined semiconductor circuit. Further, a heat radiating fin 14b is attached to the outer peripheral surface of the cooling body 14, and a wind turbine 18 and a cooling fan (not shown) for sending cooling air to the wind tunnel 19 are combined with this assembly to form a module of the semiconductor device. Is building.

図５，図６の構成により、複数基の単位ユニット１３を組合せて放熱性に優れた半導体モジュールをコンパクトに構築できる。   5 and 6, a plurality of unit units 13 can be combined to form a compact semiconductor module with excellent heat dissipation.

本発明の実施例１に係わる半導体装置の組立構造図1 is an assembly structure diagram of a semiconductor device according to Embodiment 1 of the present invention. 本発明の実施例２に係わる半導体装置の要部構造図で、（ａ）は側面図、（ｂ）は（ａ）の平面図FIG. 4 is a structural diagram of a principal part of a semiconductor device according to a second embodiment of the present invention, where (a) is a side view and (b) is a plan view of (a). 本発明の実施例３に係わる半導体装置のモジュール単位ユニットの構成断面図Sectional drawing of the module unit unit of the semiconductor device concerning Example 3 of this invention 図３の単位ユニットに冷却体を組み合わせたモジュール組立体の構成断面図Cross-sectional view of a module assembly in which the cooling unit is combined with the unit unit of FIG. 図３の単位ユニットを複数基並置して冷却体と組合せたモジュール組立体の構成図Configuration diagram of a module assembly in which a plurality of unit units of FIG. 3 are juxtaposed and combined with a cooling body 図５と異なる形態のモジュール組立体の構成図The block diagram of the module assembly of a form different from FIG. ＩＧＢＴモジュールを例にした従来における半導体装置の組立構造図Assembly structure diagram of a conventional semiconductor device taking an IGBT module as an example

符号の説明Explanation of symbols

２ 絶縁基板
３ 半導体チップ
７ 電極板
７ａ 分岐条片
７ｂ 位置決め段部
８ リードフレーム
９ ろう接合部
１０ スポット融接部
１１ 封止樹脂
１２ 絶縁シート
１３ モジュール単位ユニット
１４，１７ 冷却体
１４ａ 冷媒通路
１４ｂ 放熱フィン 2 Insulating substrate 3 Semiconductor chip 7 Electrode plate 7a Branch strip 7b Positioning step part 8 Lead frame 9 Brazing joint part 10 Spot fusion part 11 Sealing resin 12 Insulating sheet 13 Module unit units 14 and 17 Cooling body 14a Refrigerant passage 14b Heat dissipation fin

Claims (6)

半導体チップの主面にヒートスプレッダとして機能する電極板をろう付けした上で、該電極板に配線部材としてのリードフレームを接合した半導体装置において、
半導体チップの主面にろう付けした電極板の周縁一部をチップとの接合面域から側方に延在させ、該延長部に前記リードフレームの接合端部を重ね合わせて融接接合したことを特徴とする半導体装置。 In a semiconductor device in which a lead frame as a wiring member is joined to the electrode plate after brazing an electrode plate functioning as a heat spreader to the main surface of the semiconductor chip,
A part of the periphery of the electrode plate brazed to the main surface of the semiconductor chip is extended laterally from the bonding surface area with the chip, and the bonding end portion of the lead frame is overlapped with the extension portion and fusion bonded. A semiconductor device characterized by the above. 請求項１に記載の半導体装置において、電極板の周縁から側方に張り出した延長部を複数の条片に分岐し、各分岐条片ごとにリードフレームの接合端部との間をスポット融接したことを特徴とする半導体装置。 2. The semiconductor device according to claim 1, wherein an extended portion projecting laterally from the periphery of the electrode plate is branched into a plurality of strips, and spot fusion welding is performed between the joint ends of the lead frame for each branch strip. A semiconductor device characterized by that. 請求項１または２のいずれかに記載の半導体装置において、電極板の延長部に、リードフレームとの重ね合わせ位置を決める位置決め段部を形成したことを特徴とする半導体装置。 3. The semiconductor device according to claim 1, wherein a positioning step portion for determining an overlapping position with the lead frame is formed in an extension portion of the electrode plate. 半導体チップの主面にヒートスプレッダとして機能する電極板をろう付けした上で、該電極板に配線部材としてのリードフレームを接合した半導体装置において、
前記電極板の端面を露出して半導体チップおよびリードフレームの周域を樹脂封止し、かつリードフレームの一端を封止樹脂から外方に引出してモジュールの単位ユニットを構成した上で、該単位ユニットの電極板端面に絶縁層を介して冷却体を伝熱的に組み付けたことを特徴とする半導体装置。 In a semiconductor device in which a lead frame as a wiring member is joined to the electrode plate after brazing an electrode plate functioning as a heat spreader to the main surface of the semiconductor chip,
A unit unit of the module is formed by exposing the end face of the electrode plate to resin-enclose the periphery of the semiconductor chip and the lead frame, and pulling out one end of the lead frame from the sealing resin to the outside. A semiconductor device, wherein a cooling body is assembled in a heat transfer manner to an end face of an electrode plate of a unit via an insulating layer. 請求項４に記載の半導体装置において、複数基の単位ユニットを並置し、かつ各単位ユニットに共用の冷却体を組合せた上で、単位ユニットのリードフレームを相互接続してモジュールを構築したことを特徴とする半導体装置。 5. The semiconductor device according to claim 4, wherein a plurality of unit units are juxtaposed and a common cooling body is combined with each unit unit, and then a unit unit lead frame is interconnected to construct a module. A featured semiconductor device. 請求項４または５に記載の半導体装置において、冷却体が液冷式、ないし放熱フィンを備えた風冷式の冷却体であることを特徴とする半導体装置。 6. The semiconductor device according to claim 4, wherein the cooling body is a liquid cooling type or an air cooling type cooling body provided with radiation fins.
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