JP2008042005A - Data collecting method, substrate processing device, and substrate processing system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress a consumption of a storage capacity of data without reducing an accuracy of a data analysis. <P>SOLUTION: When measurement data are acquired from instruments 350A, 350B, 350C and the like by respective MC 340A, 340B, 340C and the like at a predetermined sampling period, and are stored in a data storing means 640, in the case where a device status is not in a substrate processing status (e.g., an idling state); a sampling control means 614 prolongs a sampling period as compared with the case of being in the substrate processing status, thereby reducing an amount of data stored in the data storing means to the utmost. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a data collection method, a substrate processing apparatus, and a substrate processing system.

  In the semiconductor manufacturing process, various substrate processing apparatuses for performing predetermined process processing on, for example, a semiconductor wafer, an FPD (Flat Panel Display) substrate or the like as a substrate to be processed (hereinafter also simply referred to as “substrate”) are used. Yes. For example, a plasma processing apparatus mounts a substrate on a mounting table in a processing chamber, applies high-frequency power to electrodes in the processing chamber, introduces a processing gas, and generates plasma of the processing gas on the substrate, thereby etching the substrate. Processing or film formation processing is performed.

  Such a processing apparatus has various parameters for controlling or monitoring the operation status, and controls or monitors them so that various processes can be performed under optimum conditions. Parameters include, for example, process chamber temperature, electrode temperature, process chamber pressure, process gas flow rate control data, plasma data, optical data for grasping the plasma state, and electrical power from a matcher that performs impedance matching between the electrode and the high-frequency power source. Data etc. are mentioned. When a substrate is processed by such a substrate processing apparatus, the substrate processing apparatus is controlled so that optimum processing can always be performed while monitoring each parameter with each measuring instrument.

  For example, in Patent Documents 1 and 2 below, a plurality of process parameters are analyzed, and these parameters are statistically correlated as analysis data to detect changes in process characteristics and system characteristics. There has been proposed a method for correcting analysis data based on the above. In addition, the above-mentioned plurality of parameters are collected as analysis data into a small number of statistical data using a principal component analysis technique, which is one of the multivariate analyses, and the operation status of the processor is monitored and based on this statistical data. There is also an evaluation method.

Japanese Patent Laid-Open No. 11-87323 JP 2004-39952 A

  By the way, the substrate processing apparatus as described above has various apparatus states when processing a substrate. For example, when processing a plurality of substrates continuously, in addition to the substrate processing execution state in which a plurality of substrates are continuously processed, the processing until the next processing of a plurality of substrates starts after the processing is completed. There is an idling state. In addition, there are a state in which the apparatus is assembled and started up, a state in which replacement of parts in the substrate processing apparatus is near, and a state in which the apparatus is abnormal.

  However, since the number of parameters reaches several tens of types, the amount of data acquired as parameters from the measuring instrument is very large, and conventionally, a constant sampling period (for example, 0) regardless of the state of the apparatus as described above. (1 second), data for each parameter was collected from each measuring instrument, and the amount of data was even greater. Therefore, there has been a problem that the capacity of data storage means (for example, a hard disk) for storing these data will be exhausted in a short period of time.

  In addition, when an abnormality occurs in the substrate processing apparatus, the data when the substrate processing is being executed is mainly analyzed, so that the data when the substrate processing is not executed, for example, when the substrate processing is in an idling state, is stored in the data storage. There is also a problem that it takes a very long time to search for the data necessary for analysis if the method is stored in large quantities. Moreover, since the substrate is not processed in the idling state, a large amount of data is not required if no abnormality has occurred.

  In this regard, it can be considered that the consumption of storage capacity in the data storage means can be suppressed because the amount of data can be reduced by increasing the sampling period when acquiring data from the measuring instrument. However, if the sampling period is shortened regardless of the state of the apparatus, for example, the amount of data when the substrate processing is being executed is also reduced. Therefore, when such data needs to be analyzed, , The accuracy of data analysis may be reduced. Furthermore, from the viewpoint of manufacturing cost, it is desirable to use a data storage means with as little capacity as possible.

  Therefore, the present invention has been made in view of such problems, and the object of the present invention is to reduce the data stored in the data storage means as much as possible without reducing the data analysis accuracy. An object of the present invention is to provide a data collection method and the like that can suppress consumption of storage capacity in a data storage means.

  In order to solve the above problems, according to an aspect of the present invention, a processing chamber for performing a predetermined process on a substrate to be processed is provided, and data is collected from at least a plurality of measuring instruments provided in the processing chamber. A data collection method for a substrate processing apparatus, comprising a step of acquiring measurement data from the measuring instrument at a predetermined sampling period and storing the measurement data in a data storage means, wherein the sampling period is set according to the state of the substrate processing apparatus. A data collection method characterized by changing is provided.

  In order to solve the above-described problem, according to another aspect of the present invention, there is provided a substrate processing apparatus including a processing chamber for performing a predetermined process on a substrate to be processed, wherein at least a plurality of processing chambers provided in the processing chamber A measuring instrument, a sampling means for acquiring measurement data from the measuring instrument at a predetermined sampling period, a data storage means for storing the measurement data, and a sampling period for preliminarily storing a sampling period for each different state of the substrate processing apparatus A substrate processing apparatus comprising: storage means; and sampling control means for performing control to change the sampling period to the sampling period acquired from the sampling period storage means based on a state of the substrate processing apparatus. Is provided.

  According to the present invention, since the sampling period is changed according to the state of the substrate processing apparatus, the amount of collected data can be reduced as compared with the case where sampling is always performed at the same period. As a result, the sampling cycle can be changed so as to reduce the data that is not necessary for data analysis, etc., so that the consumption of the storage capacity of the data storage means can be suppressed without reducing the accuracy of the data analysis. Can do. Furthermore, if an appropriate sampling period is set for each state of the substrate processing apparatus, a more accurate analysis result can be obtained by performing data analysis using the sampled data.

  Further, it is determined whether or not the state of the substrate processing apparatus is a substrate processing execution state. If the state of the substrate processing apparatus is not a substrate processing execution state (for example, in an idling state), the substrate processing execution state is set. It is preferable to make the sampling period longer than in some cases. Thereby, there is less data that is less necessary for data analysis (for example, data in the idling state) than data that is highly necessary for data analysis (for example, data in the substrate processing execution state). Data collection can be performed as follows. Therefore, the consumption of the storage capacity of the data storage means can be suppressed without reducing the data analysis accuracy.

  Further, even when the state of the substrate processing apparatus is not the substrate processing execution state, in the case of the apparatus startup state, at least the sampling cycle in the substrate processing execution state is equal to or shorter than the sampling cycle. It is preferable to do. As a result, for example, even when the substrate processing is not performed, the amount of data is reduced in a state where there is a high possibility that an apparatus trouble will occur and the possibility of performing data analysis is high, that is, in the state where the apparatus is started. Can not be. For example, by making the sampling cycle in the apparatus startup state the same as the sampling period in the substrate processing execution state, it is possible to prevent a decrease in the accuracy of data analysis performed when an apparatus trouble occurs. In addition, since the amount of data can be further increased by shortening the sampling period in the apparatus startup state than the sampling period in the substrate processing execution state, it is possible to improve the accuracy of data analysis.

  In order to solve the above-described problem, according to another aspect of the present invention, there is provided a substrate processing apparatus including a processing chamber for performing a predetermined process on a substrate to be processed, wherein at least a plurality of processing chambers provided in the processing chamber are provided. A measuring instrument; sampling means for acquiring measurement data from the measuring instrument at a predetermined sampling period; data storage means for storing the measurement data; data analysis means for analyzing measurement data stored in the data storage means; And a sampling control means for performing a control for changing the sampling period in accordance with an analysis result by the data analysis means.

  In order to solve the above problems, according to another aspect of the present invention, a substrate processing apparatus including a processing chamber for performing a predetermined process on a substrate to be processed, and at least a plurality of measuring instruments provided in the processing chamber; A substrate processing system in which a data processing device for processing data from the plurality of measuring instruments is connected via a network, wherein the substrate processing device acquires measurement data from the measuring instrument at a predetermined sampling period. And communication means for transmitting the acquired measurement data to the data processing device via the network, the data processing device comprising: communication means for receiving measurement data from the substrate processing device; and the received measurement data Data storage means for storing, data analysis means for analyzing the measurement data stored in the data storage means, and the data analysis means A substrate processing system, comprising a sampling control means for performing control for changing the sampling period in accordance with the analysis result is provided.

  According to the present invention as described above, since the sampling period is changed according to the analysis result by the data analysis means, the amount of collected data can be reduced as compared with the case where sampling is always performed at the same period. Thereby, the consumption of the storage capacity of the data storage means can be suppressed.

  In order to solve the above problems, according to another aspect of the present invention, a processing chamber for performing a predetermined process on a substrate to be processed is provided, and data is collected from at least a plurality of measuring instruments provided in the processing chamber. A data collection method for a substrate processing apparatus, comprising: obtaining measurement data from the measuring instrument at a predetermined sampling period and storing the measurement data in a data storage unit; and storing the measurement data stored in the data storage unit Analyzing and determining whether or not the state of the substrate processing apparatus is an abnormal state based on the analysis result, and when the state of the substrate processing apparatus is an abnormal state, the sampling is performed more than when the state is not an abnormal state. A data collection method characterized by shortening the period is provided.

  According to the present invention, since the sampling period is changed according to the analysis result by the data analysis unit, the amount of collected data can be reduced as compared with the case where sampling is always performed at the same period. Thereby, consumption of the storage area of the data storage means can be suppressed. In addition, when the substrate processing apparatus is in an abnormal state, the measurement data is sampled with a short sampling period, so that the amount of data can be increased as compared with the case where the substrate processing apparatus is not in an abnormal state. As a result, the state of the substrate processing apparatus in an abnormal state can be analyzed in detail, and the accuracy of data analysis can be further increased.

  In order to solve the above problems, according to another aspect of the present invention, a processing chamber for performing a predetermined process on a substrate to be processed is provided, and data is collected from at least a plurality of measuring instruments provided in the processing chamber. A data collection method for a substrate processing apparatus, comprising: obtaining measurement data from the measuring instrument at a predetermined sampling period and storing the measurement data in a data storage unit; and storing the measurement data stored in the data storage unit There is provided a data collection method characterized by analyzing, predicting a state of the substrate processing apparatus based on the analysis result, and changing the sampling period based on the prediction result.

  According to the present invention, since the sampling period is changed based on the prediction result, the amount of collected data can be reduced as compared with the case where sampling is always performed at the same period. Thereby, consumption of the storage area of the data storage means can be suppressed.

  In this case, for example, the measurement data stored in the data storage means is analyzed, the wear level of the parts provided in the processing chamber is predicted based on the analysis result, and the predicted wear level is set to a preset threshold value. It is determined whether or not the threshold value has been exceeded, and when the threshold value is exceeded, the sampling period is preferably shorter than when the threshold value is not exceeded. As a result, when the part replacement time is approaching, more data can be sampled to improve the accuracy of part consumption prediction.

  In order to solve the above problems, according to another aspect of the present invention, there is provided a plurality of processing chambers for processing a substrate to be processed, and substrate processing for collecting data from at least a plurality of measuring instruments provided in each processing chamber. A data collection method for an apparatus, comprising: for each processing chamber, a step of acquiring measurement data from the measuring instrument at a predetermined sampling period and storing the measurement data in a data storage unit, and storing the data in the data storage unit There is provided a data collection method characterized by analyzing measurement data and changing the sampling period for each processing chamber based on the analysis result.

  In this case, for example, the measurement data stored in the data storage means is analyzed, and based on the analysis result, it is determined whether or not the state of each processing chamber is an abnormal state. When each processing chamber is in an abnormal state, the sampling cycle is made shorter than when the processing chamber is not in an abnormal state. Further, the measurement data stored in the data storage means is analyzed, the state is predicted for each processing chamber based on the analysis result, and the sampling period is changed for each processing chamber according to the prediction result. You may make it do.

  According to the present invention, when the substrate processing apparatus includes a plurality of processing chambers, the sampling cycle is changed for each processing chamber, so that data can be collected at an appropriate cycle for each processing chamber. For example, when different processing is performed for each processing chamber, only data necessary for analyzing the state of each processing can be collected. As a result, the amount of collected data can be minimized, and wasteful consumption of the storage area of the data storage means can be suppressed.

  In order to solve the above problems, according to another aspect of the present invention, a substrate processing apparatus including a processing chamber for performing a predetermined process on a substrate to be processed, and at least a plurality of measuring instruments provided in the processing chamber; A substrate processing system in which a data processing device for processing data from the plurality of measuring instruments and a host computer are connected via a network, wherein the substrate processing device receives measurement data from the measuring instrument at a predetermined sampling period. Sampling means for acquiring and communication means for transmitting the acquired measurement data to the data processing device via the network, the data processing device receiving a signal from the host computer and measurement data from the substrate processing device Communication means for receiving, data storage means for storing received measurement data, and signals from the host computer. There determines the state of the substrate processing apparatus, a substrate processing system, comprising a sampling control means for performing control for changing the sampling period depending on the state is provided.

  According to the present invention, the sampling control means determines the state of the substrate processing apparatus based on a signal from the host computer. Therefore, the sampling cycle of the entire substrate processing system can be collectively managed using the host computer.

  According to the present invention, since it is possible to collect the minimum necessary data for data analysis and the like, it is possible to suppress the consumption of the storage capacity of the data storage means without reducing the accuracy of data analysis.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

(Configuration Example of Substrate Processing Apparatus According to First Embodiment)
First, a substrate processing apparatus according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to the present embodiment. The substrate processing apparatus 100 includes a processing unit 110 that performs various processes such as a film forming process and an etching process on a substrate to be processed, such as a semiconductor wafer (hereinafter also simply referred to as “wafer”) W, and a processing unit 110. On the other hand, a transfer unit 120 for loading and unloading the wafer W is provided.

  As shown in FIG. 1, the transfer unit 120 includes a transfer chamber 130 for transferring wafers between a cassette container 132 (132 </ b> A to 132 </ b> C) as an example of a substrate storage container and a processing unit 110. The transfer chamber 130 is formed in a box shape having a substantially polygonal cross section (for example, a rectangle). A plurality of cassette tables 134 (134A to 134C) are arranged in parallel on one side surface of the transfer chamber 130. These cassette stands 134A to 134C are configured so that cassette containers 132A to 132C can be placed thereon.

Each cassette container 132 (132A to 132C) can accommodate, for example, a maximum of 25 wafers W placed in multiple stages at an equal pitch, and the inside is filled with, for example, an N ₂ gas atmosphere. It has become. The transfer chamber 130 is configured such that the wafer W can be transferred into and out of the transfer chamber 130 via a gate valve. The number of cassette stands 134 and cassette containers 132 is not limited to the example shown in FIG.

  At the end of the transfer chamber 130, an orienter (pre-alignment stage) 136 as a positioning device is provided. In this orienter 136, for example, the orientation flat or notch of the wafer W is detected and alignment is performed.

  In the transfer chamber 130, for example, a transfer unit side transfer mechanism (transfer chamber transfer mechanism) 170 that transfers the wafer W along the longitudinal direction (the arrow direction shown in the transfer chamber 130 in FIG. 1) by a linear drive mechanism is provided. ing. The transport unit side transport mechanism 170 operates in accordance with a control signal from the control unit 300 described later. The transport unit-side transport mechanism 170 is not limited to a double arm mechanism having two picks (end effectors) as shown in FIG. 1, but may be a single arm mechanism having only one pick.

  Next, a configuration example of the processing unit 110 will be described. For example, in the case of a cluster tool type substrate processing apparatus, the processing unit 110 includes a plurality of processing chambers 200 (first processing chambers) around a common transfer chamber 150 formed in a polygonal cross section (for example, a hexagon) as shown in FIG. To fourth processing chambers 200A to 200D) and load lock chambers 160M and 160N are hermetically connected.

  In the processing chambers 200A to 200D, the wafer W is subjected to various processes such as a film forming process (for example, plasma CVD process) and an etching process (for example, plasma etching process). Each of the processing chambers 200A to 200D has a gas introduction system (not shown in FIG. 1) capable of introducing a predetermined gas such as a processing gas or a purge gas into each of the processing chambers 200A to 200D, and an exhaust capable of exhausting the inside of each of the processing chambers 200A to 200D. A system (not shown in FIG. 1) is connected. In addition, the structural example of these process chambers 200A-200D is mentioned later. Further, the number of processing chambers 200 is not limited to the example shown in FIG.

  The common transfer chamber 150 has a function of loading / unloading the wafer W between the processing chambers 200A to 200D or between the processing chambers 200A to 200D and the first and second load lock chambers 160M and 160N. The common transfer chamber 150 is formed in a polygonal cross section (for example, a hexagon), and the processing chambers 200 (200A to 200D) are connected to the first transfer chamber 200 through a gate valve. The ends of the two load lock chambers 160M and 160N are connected to each other via a gate valve (vacuum side gate valve). The base ends of the first and second load lock chambers 160M and 160N are connected to the other side surface of the transfer chamber 130 via gate valves (atmosphere side gate valves), respectively.

  The first and second load lock chambers 160M and 160N have a function of temporarily holding the wafer W and adjusting the pressure and then transferring it to the next stage. In each of the first and second load lock chambers 160M and 160N, a delivery table on which the wafer W can be placed is provided.

  In such a processing unit 110, as described above, between the common transfer chamber 150 and the processing chambers 200A to 200D and between the common transfer chamber 150 and the load lock chambers 160M and 160N can be opened and closed in an airtight manner. It is configured as a cluster tool, and can communicate with the inside of the common transfer chamber 150 as necessary. The first and second load lock chambers 160M and 160N and the transfer chamber 130 are also configured to be openable and closable.

  In the common transfer chamber 150, for example, a processing unit-side transfer mechanism (common transfer chamber transfer mechanism) 180 including an articulated arm configured to be able to bend, extend, move up and down, and turn is provided. The processing unit side transport mechanism transports the wafer W between the load lock chambers 160M and 160N and the processing chambers 200A to 200D. The processing unit side transport mechanism 180 is driven based on a control signal from the control unit 300. The processing unit side transport mechanism 180 is not limited to a double arm mechanism having two picks as shown in FIG. 1, but may be a single arm mechanism having only one pick.

  The substrate processing apparatus 100 is provided with a control unit 300 that controls the overall operation of the substrate processing apparatus 100, including control of the transport unit side transport mechanism 170, the processing unit side 180, each gate valve, the orienter 136, and the like. . A configuration example of the control unit 300 will be described later.

(Configuration example of processing chamber)
Next, configuration examples of the processing chambers 200A to 200D will be described with reference to the drawings. FIG. 2 is a block diagram illustrating a configuration example of each of the processing chambers 200A to 200D and its peripheral devices. Here, the configuration of each of the processing chambers 200A to 200D is assumed to be the same, and A to D are omitted from the reference numerals indicating the components of the processing chambers 200A to 200D. Therefore, for example, the processing chamber 200 indicates each of the processing chambers 200A to 200D.

  As shown in FIG. 2, the processing chamber 200 includes a processing container 201 made of, for example, aluminum, and an aluminum support 203 that can be moved up and down to support the lower electrode 202 via an insulating material 202A. And a shower head 204 that is disposed above the support 203 and supplies process gas. The shower head 204 also functions as an upper electrode, and is electrically insulated from the side wall of the processing chamber 200 through an insulating material 204C. Hereinafter, the shower head 204 is also referred to as an upper electrode 204.

  A first high-frequency power source 204E is connected to the upper electrode 204, and a matching unit 204D is inserted in the power supply line. The first high frequency power supply 204E outputs power in the range of 50 to 150 MHz. By applying high-frequency power to the upper electrode 204 in this way, a high-density plasma can be formed in a preferable dissociated state in the processing chamber 200, and plasma processing under low pressure conditions becomes possible. The output frequency of the first high frequency power supply 204E is preferably 50 to 80 MHz, and typically, the illustrated frequency of 60 MHz or the vicinity thereof is adopted.

  A detection window 222 is provided on the side wall of the processing chamber 200, and an optical measuring instrument such as a spectroscope that detects plasma emission in the processing chamber 200 through the detection window 222 outside the side wall of the processing chamber 200. 220 is provided.

  The processing chamber 200 includes a small-diameter upper chamber 201A positioned on the upper side in the processing container 201 and a large-diameter lower chamber 201B positioned on the lower side. An entrance / exit for carrying the wafer W in / out is formed in the upper part of the lower chamber 201B, and a gate valve 206 is attached to the entrance / exit.

  A second high-frequency power source 207 is connected to the lower electrode 202 via an electrical measuring instrument 207C such as a VI probe, a matching unit 207A, and a wattmeter (measuring instrument) 207B. The second high frequency power supply 207 outputs power in the range of several hundred kHz to several tens of MHz. By applying a frequency in such a range to the lower electrode 202, an appropriate ion action can be given without damaging the wafer W, which is the substrate to be processed. The frequency of the second high-frequency power source 207 is typically a frequency such as 2 MHz shown in the figure. In the present embodiment, high frequency power of 2 MHz is output from the second high frequency power supply 207. In addition to the high frequency power of 2 MHz, an integer multiple wave (for example, 4 MHz, 8 MHz, 10 MHz, etc.) having this as a fundamental wave is also applied to the lower electrode 202.

  The matching unit 207A includes, for example, a capacitor C, variable capacitors C1, C2, and a coil L. By adjusting the variable capacitors C1, C2, impedance matching between the lower electrode 202 and the second high-frequency power source 207 is achieved. Yes. The matching unit 207A includes a detector (not shown) that measures a high-frequency (RF) voltage Vpp on the lower electrode 202 side (high-frequency voltage output side). The matching unit 207A includes a voltmeter (measuring instrument) 207a, and the voltmeter 207a measures the voltage Vdc between the second high-frequency power supply line (electric wire) and the ground (ground) of the processing chamber 200. Is done.

  The second high frequency power output from the second high frequency power supply 207 is measured by the wattmeter 207B. In addition, a fundamental wave (for example, a traveling wave and a reflected wave of high-frequency power) and a high-frequency voltage (V), a high-frequency current (I), a high-frequency phase (P), an impedance (based on plasma generated in the upper chamber 201A) Z) is detected by measuring the high frequency power applied to the lower electrode 202 by the electric measuring device 207C.

  An electrostatic chuck 208 is disposed on the upper surface of the lower electrode 202, and a DC power source 209 is connected to an electrode plate 208A of the electrostatic chuck 208. The wafer W can be electrostatically attracted to the electrostatic chuck 208 by applying a high voltage from the DC power supply 209 to the electrode plate 208A under a high vacuum. Between the electrode plate 208A of the electrostatic chuck 208 and the DC power source 209, a wattmeter 209a for detecting the applied current and applied voltage of the electrostatic chuck 208 is connected.

  A focus ring 210 a for collecting the plasma generated in the upper chamber 201 </ b> A on the wafer W is disposed on the outer periphery of the lower electrode 202. An exhaust ring 211 attached to the upper portion of the support 203 is disposed below the focus ring 210a. A plurality of holes are formed in the exhaust ring 211 at equal intervals in the circumferential direction over the entire circumference, and the gas in the upper chamber 201A is exhausted to the lower chamber 201B through these holes.

  The support 203 moves up and down between the upper chamber 201A and the lower chamber 201B by the operation of the ball screw mechanism 212 and the bellows 213. When supplying the wafer W onto the lower electrode 202, the lower electrode 202 is lowered to the lower chamber 201 </ b> B as the support body 203 is lowered, the gate valve 206 is opened, and the processing unit side in the common transfer chamber 150 is opened. A transfer mechanism (common transfer chamber transfer mechanism) 180 (see FIG. 1) supplies the wafer W onto the lower electrode 202. A bellows cover 216 is provided outside the bellows 213.

  Inside the support 203, a refrigerant flow path 203A connected to the refrigerant pipe 214 is formed. The wafer W is adjusted to a predetermined temperature by circulating the coolant through the coolant flow path 203A through the coolant pipe 214.

  A gas flow path 203B is formed in each of the support 203, the insulating material 202A, the lower electrode 202, and the electrostatic chuck 208. The gas introduction mechanism 215 supplies, for example, He gas at a predetermined pressure as a backside gas to the slit between the electrostatic chuck 208 and the wafer W via the gas pipe 215A. This He gas increases the thermal conductivity between the electrostatic chuck 208 and the wafer W. The pressure of the backside gas is detected by the pressure gauge 215B. The gas introduction mechanism 215 is provided with, for example, a mass flow controller (not shown), and the mass flow controller can detect and control the gas flow rate of the backside gas.

A gas introduction part 204A is formed on the upper surface of the upper electrode 204, and a process gas supply system 218 is connected to the gas introduction part 204A via a pipe 217. The process gas supply system 218 includes a C ₅ F ₈ gas supply source 218A, an O ₂ gas supply source 218D, and an Ar gas supply source 218G.

  These gas supply sources 218A, 218D, 218G send the respective gases to the upper electrode 204 at predetermined flow rates via valves 218B, 218E, 218H and mass flow controllers 218C, 218F, 218I, respectively. Thus, the upper electrode 204 is supplied with a mixed gas having a predetermined blending ratio. A plurality of holes 204B are provided uniformly on the entire lower surface of the upper electrode 204, and a mixed gas is supplied as a process gas from the upper electrode 204 into the upper chamber 201A through these holes 204B.

  The processing chamber 200 is connected to an exhaust system 219 composed of a vacuum pump or the like via an exhaust pipe 201C. The exhaust pipe 201 </ b> C is provided with an APC (Auto Pressure Controller) valve 201 </ b> D, and the opening degree of the APC valve is automatically adjusted according to the gas pressure in the processing chamber 200.

(Configuration example of control unit)
A configuration example of the control unit 300 of the substrate processing apparatus 100 will be described with reference to the drawings. FIG. 3 is a block diagram illustrating a configuration of the control unit 300. As shown in the figure, the control unit 300 includes an apparatus control unit (hereinafter referred to as “EC: Equipment Controller”) 310, a plurality of module control units (hereinafter referred to as “MC: Module Controller”) 340A, 340B, 340C,..., Measuring instruments 350A, 350B, 350C,..., A communication means 360, and a switching hub 370 connecting them.

  The EC 310 configures a main control unit (master control unit) that controls the overall operation of the substrate processing apparatus 100 by controlling the MCs 340A, 340B, 340C,. For example, the EC 310 includes a CPU (central processing unit) constituting the EC main body, a RAM (random access memory) provided with a memory area used for various data processing performed by the CPU, an operation screen, a selection screen, and the like. Display means consisting of a liquid crystal display, etc., input of various data such as process recipe input and editing by the operator, output of various data such as process recipe and process log output to a predetermined storage medium, etc. Communication for communicating with an external device such as a host computer 500, such as an input / output unit that can be performed, a notification unit such as an alarm device (for example, a buzzer) that notifies when an abnormality such as leakage occurs in the substrate processing apparatus 100 Means. Further, the EC 310 includes a processing program for executing various processes of the substrate processing apparatus 100 and a storage unit that stores information necessary for executing the processing program.

  Each MC 340A, 340B, 340C,... Is a sub-control that controls the operation of each module such as the transfer chamber 130, the orienter 136, the load lock chambers 160M and 160N, the common transfer chamber 150, and the processing chambers 200A to 200D of the substrate processing apparatus 100. Part (slave control part).

  Further, each MC 340A, 340B, 340C,... Also has a function of sampling a signal (hereinafter referred to as “measurement signal”) measured by each measuring instrument 350A, 350B, 350C,.

  Measuring instruments 350A, 350B, 350C,... Are provided in each module, and measure signals indicating the state of each module and the state of the wafer W in each module. The MCs 340A, 340B, 340C,... Sample the signals measured by the measuring instruments 350A, 350B, 350C,..., And sample data obtained by sampling, that is, measurement data (hereinafter simply referred to as “data”). Is also transmitted to the communication means 360.

  The communication means 360 of the substrate processing apparatus 100 is electrically connected to the data processing apparatus 600 via a network 400 such as a LAN (Local Area Network). The communication unit 360 exchanges various data with the data processing apparatus 600 based on a protocol such as TCP / IP. The communication unit 360 transmits sampling data from each of the MCs 340A, 340B, 340C,.

  The host computer 500 manages the manufacturing process of the entire factory where the substrate processing apparatus 100 is installed. The host computer 500 is connected to the EC 310 in the control unit 300 in the substrate processing apparatus 100 via the network 400. The EC 310 has a communication means such as an HCI (Host Communication Interface) as a logical interface means with the host computer 500, for example, and various data exchanges with the host computer 500 such as TCP / IP by this HCI. This is done based on the protocol. Note that the configuration of the communication means is not limited to the above. Thereby, the host computer 500 can also control the substrate processing apparatus 100 via the EC 310. In addition, the host computer 500 controls the automatic guided vehicle (not shown) and the like to set the cassette container on the cassette bases 134 </ b> A to 134 </ b> C of the substrate processing apparatus 100.

  The data processing device 600 stores the sampling data received from the communication unit 360 and executes various arithmetic processes using the sampling data. Further, the data processing device 600 controls the data sampling operation of each MC 340A, 340B, 340C,.

(Configuration example of data processor, MC, measuring instrument)
A configuration example of the data processing device 600, MC 340A, 340B, 340C,... And measuring instruments 350A, 350B, 350C,. FIG. 4 is a block diagram showing these configurations. Hereinafter, each configuration will be described along the flow of measurement data and sampling data.

  As shown in FIG. 4, each measuring instrument 350A, 350B, 350C,... Is composed of, for example, a parameter signal measuring instrument 352, an optical signal measuring instrument 354, and an electrical signal measuring instrument 356. Among these, the parameter signal measuring device 352 is applied to at least one of the flow rate of the processing gas introduced into the processing chamber 200 of the substrate processing apparatus 100, the pressure in the processing chamber 200, and the electrode disposed facing the processing chamber 200. Measure the controllable parameters such as high frequency power. The optical signal measuring instrument 354 measures an optical signal such as plasma spectroscopy for grasping the plasma state excited in the processing chamber 200. Specifically, the optical measuring instrument 220 includes the optical signal measuring instrument 354. Equivalent to. The electrical signal measuring instrument 356 measures an electrical signal indicating the state of the substrate processing apparatus 100. Specifically, the electrical signal measuring instrument 207C connected to the lower electrode 202 of the processing chamber 200, power The 207B, the voltmeter 207a, the wattmeter 209a connected between the electrode plate 208A of the electrostatic chuck 208 and the DC power supply 209 correspond to this.

  In this embodiment, the measurement signal includes, for example, a signal indicating the gas flow rate measured by each mass flow controller 218C, 218F, 218I, a signal indicating the APC opening degree of the APC valve 201D, and an electrostatic chuck detected from the wattmeter 209a. 208, an applied current signal, an applied voltage signal, a signal indicating the gas pressure of the backside gas detected by the pressure gauge 215B, a measured value in the matching unit 207A (for example, the positions of the variable capacitors C1 and C2 in the matched state, and high-frequency power supply) A signal indicating a voltage Vdc between the line (electric wire) and the ground, a signal indicating a measured value (for example, a traveling wave and a reflected wave of high-frequency power) by the electric measuring instrument 207C, and the inside of the processing chamber 200 detected by the optical measuring instrument 220 The emission spectrum signal and emission intensity signal of the plasma are listed.

  Each of the MCs 340A, 340B, 340C,... Includes parameter signal sampling means 342, optical signal sampling means 344, and electrical signal sampling means 346, which are measured by the corresponding measuring instruments 350A, 350B, 350C,. Sampling the signal to obtain sampling data. For example, the parameter signal sampling means 342 of the MC 340A samples the parameter signal measured by the parameter signal measuring device 352 of the measuring device 350A. Similarly, the optical signal sampling means 344 of the MC 340A samples the optical signal measured by the optical signal measuring instrument 354 of the measuring instrument 350A, and the electrical signal sampling means 346 of the MC 340A determines the electrical signal of the measuring instrument 350A. The electrical signal measured by the measuring instrument 356 is sampled.

  Each MC 340A, 340B, 340C,... Transmits sampling data to the communication means 360. The communication unit 360 processes the received sampling data according to a communication protocol such as TCP / IP and transmits it to the data processing device 600. Note that each MC 340A, 340B, 340C,... May be provided with data communication means, and data may be transmitted directly from each MC 340A, 340B, 340C,. However, in the case of the substrate processing apparatus 100 including a plurality of processing chambers, the number of MCs mounted on the control unit 300 increases by the number of processing chambers. In this case, it is preferable to include a communication unit 360 that controls data communication from each MC 340A, 340B, 340C,... To the data processing device 600 as in the present embodiment. Thus, efficient data communication according to the traffic state of the network 400 and the amount of transmission data is realized.

  The data processing apparatus 600 that receives the sampling data from the control unit 300 includes a calculation unit 610, a program storage unit 620, a model storage unit 630, a data storage unit 640, a sampling cycle storage unit 650, and a communication unit 660. Yes. Note that the data processing device 600 is configured by a computer, for example. The arithmetic means 610 has at least functions as data analysis means 612 and sampling control means 614.

  The data analysis unit 612 statistically processes various sampling data transmitted by the communication unit 360 of the control unit 300 and received by the communication unit 660 to obtain a correlation between the data, and based on this correlation, A model used to predict the state of the processing apparatus 100 and the processing state of the wafer W is created. The data analysis unit 612 predicts the state of the substrate processing apparatus 100 and the processing state of the wafer W using the created model and the sampling data received from the control unit 300. The data analysis unit 612 determines whether the state of the substrate processing apparatus 100 and the processing state of the wafer W are normal from the sampling data received from the control unit 300. The data analysis unit 612 notifies the prediction result and the determination result to the EC 310 of the control unit 300 via the communication unit 660. The EC 310 continues, changes, or interrupts the operation of the substrate processing apparatus 100 based on the prediction result or the determination result.

  The sampling control means 614 is a parameter for each MC 340A, 340B, 340C,... So that the measurement data is sampled by changing the sampling period in accordance with, for example, the operating state of the substrate processing apparatus 100 and the data analysis result by the data analysis means 612. The sampling operation of the signal sampling means 342, the optical signal sampling means 344, and the electrical signal sampling means 346 is controlled. Details of the sampling control method by the sampling control means 614 will be described later.

  The program storage unit 620 stores an arithmetic program such as a multivariate analysis program or a univariate analysis program executed by the data analysis unit 612 and a sampling control program executed by the sampling control unit 614.

  The model storage unit 630 stores the model created by the data analysis unit 612. Further, when predicting the state of the substrate processing apparatus 100 and the processing state of the wafer W, the data analysis unit 612 reads a model from the model storage unit 630 and executes arithmetic processing using the model.

  Each of the program storage means 620 and the model storage means 630 may be constituted by recording means such as a semiconductor memory, or may be constituted by providing respective memory areas in recording means such as a hard disk.

  The data storage unit 640 stores sampling data transmitted from the communication unit 360 of the control unit 300 and received by the communication unit 660. As this data storage means 640, it is preferable to use a storage means, such as a hard disk, which can be randomly accessed, has a high access speed and a large capacity.

  The sampling cycle storage means 650 stores a plurality of sampling cycle data. The sampling control means 614 reads out one sampling period data from the sampling period storage means 650, and samples the measurement data at that period so that the parameter signal sampling means 342, the optical signal sampling means 344, and the electrical signal sampling means. 346 is controlled. The sampling cycle storage unit 650 may be configured by a storage unit such as a semiconductor memory, or may be configured by providing a memory area in a storage unit such as a hard disk used as the data storage unit 640.

  The communication unit 660 is electrically connected to the communication unit 360 of the control unit 300 via the network 400, and receives sampling data, transmits a control signal output from the sampling control unit 614, and the like.

  By the way, in this embodiment, partial least square method (hereinafter referred to as “PLS: Partial Least Squares method”) and principal component analysis (hereinafter referred to as “PCA: Principal Component Analysis”) are used as multivariate analysis. It is done. Among these, the PLS method is used for predicting the state of the substrate processing apparatus 100, predicting the consumption of components provided in the substrate processing apparatus 100, and predicting the processing result of the wafer W. PCA is used for detecting an abnormality of the substrate processing apparatus 100.

  The PLS method is described, for example, in JOURNAL OF CHEMOMETRICS, VOL.2 (PP211-228) (1998). In the PLS method, a plurality of plasma reflection parameters are explanatory variables, a plurality of control parameters and apparatus state parameters are target variables, and a model formula (a prediction formula such as a regression formula), Correlation formula) is created. In the model formula of the following formula (1), X means a matrix of explanatory variables, and Y means a matrix of explained variables (predicted values). B is a regression matrix made up of coefficients (weights) of explanatory variables, and E is a residual matrix.

Y = BX + E (1)

  In this PLS method, even if there are a large number of explanatory variables and explained variables in each of the matrices X and Y, a relational expression between X and Y can be obtained if there are a small number of actually measured values. Moreover, it is a feature of the PLS method that even a relational expression obtained with a small actual measurement value is highly stable and reliable.

  In the present embodiment, the data analysis unit 612 reads the PLS method program from the program storage unit 620, processes the data as the explanatory variable and the objective variable according to the procedure of the program, and obtains the above equation (1). Then, the data analysis means 612 can predict the objective variable by applying the data to be the explanatory variable to the matrix X after obtaining the above equation (1). In addition, the predicted value is highly reliable.

  On the other hand, PCA synthesizes a small number of characteristic parameters from a material consisting of many parameters, and analyzes the material from these synthesized parameters (principal components). When there are a large number of plasma reflection parameters, control parameters, apparatus state parameters, and the like as parameters indicating the state of the substrate processing apparatus as in the substrate processing apparatus 100 according to the present embodiment, the PAC It can be said that it is an effective method for grasping the state.

  In the present embodiment, the data analysis unit 612 reads a PCA program from the program storage unit 620, performs data analysis by PCA on a large number of parameters according to the procedure of the program, and performs a residual square sum, principal component score, An index such as a principal component score sum of squares is calculated, and an abnormal state of the substrate processing apparatus 100 is detected.

(State of substrate processing equipment)
Here, the state of the substrate processing apparatus 100 will be described with reference to the drawings. The apparatus state of the substrate processing apparatus 100 is roughly divided into a substrate processing execution state in which wafer processing is being executed and a case in which the substrate processing execution state is not in effect. Cases in which the substrate processing is not executed include an idling state in which the wafer is awaiting processing, and an apparatus startup state in which the wafer processing can be executed. In this embodiment, the idling state will be described as a case where the substrate processing execution state is not set.

  FIG. 5 shows a state transition diagram of the substrate processing apparatus 100 in this embodiment. In the present embodiment, as shown in FIG. 5, an idle state ST1 and a substrate processing execution state ST2 are considered as device states of the substrate processing apparatus 100.

  When the substrate processing apparatus 100 is in the idling state ST1, it is in a waiting state until a cassette container that accommodates the wafer W to be processed is set. When the cassette container is set in any or all of the cassette stands 134A to 134C in the idling state ST1, the apparatus state of the substrate processing apparatus 100 transitions from the idling state ST1 to the substrate processing execution state ST2 ( TR12). The cassette container is transported to the substrate processing apparatus 100 by an automatic guided vehicle (not shown) according to a command from the host computer 500, for example, and set on the cassette stand.

  The sampling control means 614 determines whether or not the apparatus state of the substrate processing apparatus 100 is the substrate processing execution state ST2 based on information from the substrate processing apparatus 100 or the host computer 500. As information from the substrate processing apparatus 100, for example, it can be determined by information on whether or not a cassette container is placed on the cassette tables 134A to 134C. Specifically, the EC 310 detects whether or not a cassette container is set, for example, by a sensor (not shown) provided on the cassette bases 134A to 134C. When the EC 310 detects that the cassette container is set, the EC 310 transmits a detection signal to the sampling control means 614. When receiving the detection signal, the sampling control means 614 determines that the substrate processing apparatus 100 has transitioned from the idling state ST1 to the substrate processing execution state ST2.

  The information from the host computer 500 includes a transport command issued from the host computer 500 when the cassette container is transported by the automatic guided vehicle. The sampling control means 614 can determine that the substrate processing apparatus 100 has transitioned from the idling state ST1 to the substrate processing execution state ST2 based on this transport command. The sampling control means 614 monitors the presence / absence of a transfer command from the host computer 500, and determines that the substrate processing apparatus 100 has transitioned from the idling state ST1 to the substrate processing execution state ST2 when the transfer command is received. Good.

  Note that the host computer 500 or the substrate processing apparatus 100 may transmit apparatus state data regarding the apparatus state after the transition to the sampling control unit 614 every time the apparatus state of the substrate processing apparatus 100 transitions. According to this, the sampling control means 614 can determine the apparatus state of the substrate processing apparatus 100 based on the apparatus state data.

  Here, the operation when the state of the substrate processing apparatus 100 is the substrate processing execution state ST2 will be described. First, the wafer W is unloaded from one of the cassette containers 132 </ b> A to 132 </ b> C by the transfer unit side transfer mechanism 170 and transferred to the orienter 136. The orienter 136 positions the wafer W and then transfers it to the load lock chamber 160M or 160N. At this time, if the process completion wafer W in which all necessary processes have been completed is in the load lock chamber 160M or 160N, the process completion wafer W is unloaded and then the unprocessed wafer W is loaded.

  Next, the unprocessed wafer W in the load lock chamber 160M or 160N is transferred by the processing unit side transfer mechanism 180 to a processing chamber in which the wafer W is processed, for example, the processing chamber 200A. A predetermined process is performed on the wafer W in the processing chamber 200A. Then, the processed wafer W that has been processed in the processing chamber 200A is unloaded from the processing chamber 200A by the processing unit side transfer mechanism 180. At this time, if the wafer W needs to be continuously processed in the plurality of processing chambers 200, the wafer W is loaded into another processing chamber 200 for performing the next processing, for example, the processing chamber 200B. Execute the process.

  After all necessary processing for the wafer W is completed in this way, the processed wafer is returned to the original cassette containers 132A to 132C in the reverse procedure. When the processing of all the wafers W is completed and returned to the cassette containers 132A to 132C, the EC 310 notifies the host computer 500 that the wafer processing is completed. Upon receiving the notification, the host computer 500 instructs the automatic guided vehicle to carry out the cassette containers 132A to 132C from the substrate processing apparatus 100.

  Thus, when the cassette containers 132A to 132C are carried out of the substrate processing apparatus 100 by the automatic guided vehicle, that is, when the cassette containers 132A to 132C are removed from the cassette stands 134A to 134C, the substrate processing apparatus 100 is again Transition to the idling state ST1 (TR21). Note that the sampling control means 614 determines that the substrate processing apparatus 100 has transitioned from the substrate processing execution state ST2 to the idling state ST1 based on information from the substrate processing apparatus 100 or the host computer 500 as described above.

(Sampling cycle)
Here, the sampling period in the first embodiment will be described with reference to the drawings. The sampling cycle storage means 650 in the first embodiment stores the data sampling cycle set for each state of the substrate processing apparatus 100 described above. The setting of the sampling cycle may be performed by an operator using a data input means (not shown) provided in the data processing apparatus 600 or may be performed via the host computer 500, for example.

  FIG. 6 is a data table showing the relationship between the sampling period stored in the sampling period storage means 650 and the apparatus state. As shown in FIG. 6, a sampling period TA (for example, 1 s) is set in the idling state ST1, and a sampling period TB (for example, 100 ms) is set in the substrate processing execution state ST2. The setting of the sampling cycle may be performed by an operator using a data input means (not shown) provided in the data processing device 600 or may be performed via the host computer 500, for example.

(Specific examples of data collection processing)
Next, a specific example of data collection processing according to the present embodiment will be described with reference to the drawings. FIG. 7 is a flowchart showing a specific example of the data collection processing according to the present embodiment. The data collection process is executed by the calculation means 610 of the data processing apparatus 600 based on a predetermined program. In this case, first, the sampling control unit 614 performs control to change the sampling period according to the state of the substrate processing apparatus 100 (steps S110, S120, and S130).

  Specifically, in step S110, it is determined whether or not the apparatus state of the substrate processing apparatus 100 is a substrate processing execution state. If the substrate processing apparatus 100 determines that it is not in the substrate processing execution state ST2, for example, if it is determined that the substrate processing apparatus 100 is in the idling state ST1 as described above, the sampling cycle storage unit 650 is accessed in step S120, and idling is performed. The sampling period TA corresponding to the state ST1 is read out.

  Then, the sampling control means 614 transmits a control signal to each MC 340A, 340B, 340C,... So that the signals measured by the measuring instruments 350A, 350B, 350C,. The control signal is transmitted / received via the communication unit 660 of the data processing device 600 and the communication unit 360 of the control unit 300.

  If it is determined in step S110 that the apparatus state is the substrate processing execution state ST2, the sampling period storage unit 650 is accessed in step S130, and the sampling period TB corresponding to the substrate processing execution state ST2 is read. Then, the sampling control means 614 transmits a control signal to each MC 340A, 340B, 340C,... So as to sample the signals measured by the measuring instruments 350A, 350B, 350C,.

  Here, FIG. 8 shows a waveform diagram showing the relationship between the state of the substrate processing apparatus 100 according to the first embodiment and the sampling period of each MC 340A, 340B, 340C,. As shown in the figure, each sampling means of each MC samples the measurement signal at a sampling period TB (for example, 100 ms) when the apparatus state is the substrate processing execution state ST2, and when the apparatus state is the idling state ST1, the sampling period TB. The measurement signal is sampled at a longer sampling period TA (for example, 1 s). As a result, the sampling data can be reduced in the idling state ST1 than in the substrate processing execution state ST2.

  In this way, the data sampled by the MCs 340A, 340B, 340C,... In the substrate processing apparatus 100 is transmitted by the communication means 360 to the communication means 660 of the data processing apparatus 600 via the network 400. In the data processing device 600, the sampling data received by the communication unit 660 in step S140 is sequentially stored in the data storage unit 640.

  Next, in step S150, it is determined whether or not to end data collection. For example, when there is an operation to stop the substrate processing apparatus 100 for the completion of the operation of the apparatus or maintenance or an instruction from the host computer 500, it is determined whether or not to end the data collection process based on these operations and instructions. To do. If it is determined in step S150 that the data collection is not terminated, the process returns to the above-described step S110, and if it is determined that the data collection is terminated, the series of data collection processes is terminated.

  As described above, the sampling data stored in the data storage unit 640 includes, for example, data analysis for investigating the cause when an abnormality occurs in the substrate processing apparatus 100, as well as abnormality determination and abnormality of the substrate processing apparatus 100. It is also used for data analysis such as prediction and wear prediction of parts of the substrate processing apparatus 100. Therefore, by reducing the data in the idling state ST1, which is less necessary for data analysis, without reducing the data in the substrate processing execution state ST2, which is highly necessary for such data analysis, the data The consumption of the storage capacity of the data storage means 640 can be suppressed without reducing the accuracy of analysis.

  In addition, more data can be acquired by shortening the sampling period TB in the substrate processing execution state ST2 than in the conventional case. As a result, the abnormality of the substrate processing apparatus 100 can be detected more accurately and earlier than before, and the replacement timing of the parts can be accurately predicted. Further, since the data in the substrate processing execution state ST2 is also used for predicting the processing result of the wafer W, the prediction accuracy of the processing result of the wafer W is obtained by acquiring more data in the substrate processing execution state ST2. Can also be improved.

  On the other hand, since the wafer is not processed in the idling state ST1, abnormality determination and abnormality prediction can be sufficiently performed even if the data amount is smaller than that in the substrate processing execution state ST2.

  In this regard, the present invention pays attention to the fact that it is possible to determine whether or not the data is highly necessary for data analysis based on the apparatus state, and the sampling period varies depending on the state of the substrate processing apparatus 100. To sample the measurement signal. According to this, it is possible to collect data so that less necessary data (for example, data in the idling state) is less than highly necessary data (for example, data in the substrate processing execution state). . Thereby, the consumption of the storage capacity of the data storage unit 640 can be suppressed without reducing the accuracy of data analysis. In addition, since an appropriate sampling period can be set for each state of the substrate processing apparatus, a more accurate analysis result can be obtained.

  In addition, since data that is not necessary for data analysis can be reduced as much as possible, the search time for data used for data analysis can be shortened. As a result, the data analysis is completed in a shorter time, so that the analysis result can be reflected in the processing of the wafer W and the operation of the substrate processing apparatus 100 at an early stage.

  As described above, since data that is not necessary for data analysis can be reduced as much as possible, the data storage unit 640 has a wider storage area for data that is highly necessary for data analysis. In other words, data acquired in the farther past can be stored in the data storage unit 640. As a result, the state history of the substrate processing apparatus 100 and the processing history of the wafer W can be verified retroactively.

  In addition, since more data that is highly necessary for data analysis can be stored, the accuracy of the data analysis result can be improved. For example, since the prediction accuracy of component consumption is improved, it is possible to accurately grasp the replacement time of the component. Further, the state of the substrate processing apparatus 100 can be monitored over a long period of time. In addition, characteristic variations between the substrate processing apparatus 100 and other substrate processing apparatuses can be grasped.

(Second Embodiment)
Next, data collection processing according to the second embodiment of the present invention will be described with reference to the drawings. The configurations of the substrate processing apparatus 100 and the data processing apparatus 600 according to the second embodiment are the same as those shown in FIGS.

  First, FIG. 9 shows a state transition diagram showing the state of the substrate processing apparatus 100 according to the present embodiment. In the second embodiment, assuming that the substrate processing apparatus 100 is not in the substrate processing execution state, the startup state when the substrate processing apparatus 100 is powered on and started up from the stopped state ST0 (hereinafter simply referred to as “startup state”). Also consider.

  The stop state ST0 refers to a state where the substrate processing apparatus 100 is not in operation and a state where the power is turned off. The stopped state ST0 includes a case where maintenance such as repair, inspection, and component replacement is performed with the substrate processing apparatus 100 turned off.

  The startup state ST3 refers to a state when the substrate processing apparatus 100 is first turned on after the power is turned on, or a state when the apparatus is started up after the maintenance of the substrate processing apparatus 100 is completed. The state when the substrate processing apparatus 100 is assembled in a factory and the apparatus is started up is also included.

  When power is turned on from the stop state ST0, the substrate processing apparatus 100 enters the start-up state ST3 (TR03), and then transitions to the idling state ST1 (TR31). For example, when the substrate processing apparatus 100 in the stopped state ST0 is turned on, control parameters such as temperature and pressure in the processing chamber are adjusted, and the wafer processing is started. Then, the substrate processing apparatus 100 transitions to the idling state ST1, and waits for wafer processing.

  In this case, the sampling control means 614 determines whether or not the apparatus state of the substrate processing apparatus 100 is the startup state ST3 based on information from the substrate processing apparatus 100 or the host computer 500. For example, it can be determined that the apparatus state is in the startup state ST3 depending on whether or not the power of the substrate processing apparatus 100 is turned on. Further, since the adjustment of the control parameter is controlled by the EC 310, for example, the sampling control unit 614 receives a notification from the EC 310 that the adjustment of the control parameter is completed, so that the apparatus state is changed from the start-up state ST3 to the idling state ST1. It can be determined that

  Since other device states and transition conditions are the same as those in the first embodiment, description thereof is omitted here.

(Sampling cycle)
Here, the sampling period in the second embodiment will be described with reference to the drawings. In the sampling cycle storage means 650 in the second embodiment, the data sampling cycle set for each state of the substrate processing apparatus 100 is stored as in the first embodiment. FIG. 10 is a data table showing the relationship between the sampling period stored in the sampling period storage means 650 and the apparatus state.

  As shown in FIG. 10, a sampling period TA (eg, 1 s) is set in the idling state ST1, a sampling period TB (eg, 100 ms) is set in the substrate processing execution state ST2, and a sampling state is set in the start-up state ST3. A period TC (for example, 100 ms) is set. The setting of the sampling cycle may be performed by an operator using a data input means (not shown) provided in the data processing apparatus 600 or may be performed via the host computer 500, for example.

(Specific examples of data collection processing)
Next, a specific example of data collection processing according to the present embodiment will be described with reference to the drawings. FIG. 11 is a flowchart showing a specific example of the data collection processing according to the present embodiment. The data collection process is executed by the calculation means 610 of the data processing apparatus 600 based on a predetermined program. In this case, first, the sampling control means 614 performs control to change the sampling period according to the state of the substrate processing apparatus 100 (steps S110, S112, S114, S120, S130).

  Specifically, in step S110, it is determined whether or not the apparatus state of the substrate processing apparatus 100 is a substrate processing execution state. If it is determined in step S110 that the apparatus state is not the substrate processing execution state, it is determined in step S112 whether or not the apparatus state of the substrate processing apparatus 100 is a startup state. If it is determined in step S112 that the apparatus state is the startup state, the sampling period storage means 650 is accessed in step S114, and the sampling period TC corresponding to the startup state ST3 is read. Then, the sampling control means 614 transmits a control signal to each MC 340A, 340B, 340C,... So that the signals measured by the measuring instruments 350A, 350B, 350C,.

  If it is determined in step S112 that the apparatus state is not the start-up state, it is determined that the apparatus is in the idling state, the sampling period storage unit 650 is accessed in step S120, and the sampling period TA corresponding to the idling state ST1. Is read. Then, the sampling control means 614 transmits a control signal to each MC 340A, 340B, 340C,... So that the signals measured by the measuring instruments 350A, 350B, 350C,.

  If it is determined in step S110 that the substrate processing apparatus 100 is in the start-up state ST3, the sampling period storage unit 650 is accessed in step S130, and the sampling period TB corresponding to the substrate processing execution state ST2 is read. . Then, the sampling control means 614 transmits a control signal to each MC 340A, 340B, 340C,... So as to sample the signals measured by the measuring instruments 350A, 350B, 350C,.

  Here, FIG. 12 shows a waveform diagram showing the relationship between the state of the substrate processing apparatus 100 according to the second embodiment and the sampling period of each MC 340A, 340B, 340C,. Note that the sampling waveform in the substrate processing execution state ST2 is the same as that in FIG. 8, and is omitted in FIG. As shown in the figure, each sampling means of each MC samples the measurement signal at a sampling period TA (for example, 1 s) when it is in the idling state ST1, and is shorter than the sampling period TA when the apparatus state is in the start-up state ST3. The measurement signal is sampled at a period TC (for example, 100 ms). As a result, even when the apparatus state is not the substrate processing execution state, in the start-up state in which the apparatus trouble is likely to occur, it is performed when the apparatus trouble occurs by increasing the sampling data rather than the idling state. The accuracy of data analysis can be improved.

  In this way, the data sampled by the MCs 340A, 340B, 340C,... In the substrate processing apparatus 100 is transmitted by the communication means 360 to the communication means 660 of the data processing apparatus 600 via the network 400. In the data processing device 600, the sampling data received by the communication unit 360 in step S140 is sequentially stored in the data storage unit 640.

  Next, in step S150, it is determined whether or not to end the data collection process. If it is determined in step S150 that the data collection is not terminated, the process returns to the above-described step S110, and if it is determined that the data collection is terminated, the series of data collection processes is terminated.

  As described above, when the substrate processing apparatus 100 is started up, the occurrence frequency of the apparatus abnormality generally increases. For example, supply failure of cooling water or refrigerant, temperature control, and zero point adjustment failure of gas flow rate control may occur. For this reason, it is preferable to acquire more data from the substrate processing apparatus 100 in the startup state ST3.

  In this regard, according to this embodiment, when the substrate processing apparatus 100 is in the start-up state ST3, the measurement signal is sampled at a shorter cycle than when it is in the idling state ST1. This increases the amount of sampling data at startup. Therefore, abnormality analysis of the substrate processing apparatus 100 can be performed with high accuracy, and the substrate processing apparatus 100 can be started up in a short time. In this embodiment, the sampling cycle TC in the start-up state ST3 is set to be the same as the sampling cycle TB in the substrate processing execution state ST2, but the sampling cycle TC is shorter than the sampling cycle TB. May be. In this case, since the amount of data can be further increased, the accuracy of data analysis can be further improved.

(Third embodiment)
Next, data collection processing according to the third embodiment of the present invention will be described with reference to the drawings. In the third embodiment, attention is paid to the fact that data in a state where an abnormality has occurred in the substrate processing apparatus 100 is highly necessary for data analysis, and whether or not the apparatus state is an abnormal state is also considered. . In this case, whether or not the apparatus state is abnormal can be determined based on the result of data analysis. Therefore, in the third embodiment, data collection including the case where the sampling period is changed according to the result of data analysis. Processing will be described. The configurations of the substrate processing apparatus 100 and the data processing apparatus 600 according to the third embodiment are the same as those shown in FIGS.

  The data analysis unit 612 of the data processing apparatus 600 analyzes the sampling data stored in the data storage unit 640, thereby detecting, for example, an abnormality in the substrate processing apparatus 100, a state prediction, a consumption prediction of parts of the substrate processing apparatus 100, The processing result prediction of the wafer W can be performed.

  When the data analysis result by the data analysis means 612 exceeds, for example, a predetermined threshold, the sampling control means 614 accesses the sampling period storage means 650, reads out the sampling period corresponding to the data analysis result, and each MC 340A, 340B, A control signal is transmitted to 340C,... So that the previous sampling period is changed to the read sampling period. In this embodiment, the abnormality detection result of the substrate processing apparatus 100 is used as a specific example of the data analysis result. However, other data analysis results can be similarly applied to this embodiment.

(Sampling cycle)
Here, the sampling period in the third embodiment will be described with reference to the drawings. The sampling cycle storage means 650 in the third embodiment stores the data sampling cycle set for each state of the substrate processing apparatus 100, as in the first and second embodiments. Further, for the idling state ST1 and the substrate processing execution state ST2 in which abnormality detection is performed, data sampling periods set before and after the occurrence of the abnormality are stored.

  FIG. 13 is a data table showing the relationship between the sampling period stored in the sampling period storage means 650 and the apparatus state. As shown in FIG. 13, a sampling period TA1 (for example, 1 s) is set in the idling state ST1 before the abnormality occurs, and a sampling period TA2 (for example, 10 ms) is set in the idling state ST1 after the abnormality occurs. The In addition, the sampling period TB1 (for example, 100 ms) is set in the substrate processing execution state ST2 before the abnormality occurs, and the sampling period TB2 (for example, 10 ms) is set in the substrate processing execution state ST2 after the abnormality occurs. . In the start-up state ST3, a sampling cycle TC (for example, 100 ms) is set.

(Specific examples of data collection processing)
Next, a specific example of data collection processing according to the present embodiment will be described with reference to the drawings. FIG. 14 is a flowchart illustrating a specific example of data collection processing according to the present embodiment. The data collection process is executed by the calculation means 610 of the data processing apparatus 600 based on a predetermined program. In this case, first, the sampling control means 614 performs control to change the sampling period according to the state of the substrate processing apparatus 100 (steps S110, S112, S114, S116, S118, S120, S122, S130, and S132).

  Specifically, in step S110, it is determined whether or not the apparatus state of the substrate processing apparatus 100 is a substrate processing execution state. If it is determined in step S110 that the apparatus state is not the substrate processing execution state, it is determined in step S112 whether or not the apparatus state of the substrate processing apparatus 100 is a startup state. If it is determined in step S112 that the apparatus state is the startup state, the sampling period storage means 650 is accessed in step S114, and the sampling period TC corresponding to the startup state ST3 is read. Then, the sampling control means 614 transmits a control signal to each MC 340A, 340B, 340C,... So that the signals measured by the measuring instruments 350A, 350B, 350C,.

  If it is determined in step S112 that the device state is not the startup state, it is determined that the device is in an idling state, and in step S116, it is determined whether or not the device state is an abnormal state. In this case, whether or not the apparatus state is abnormal is determined based on, for example, the result of data analysis abnormality determination by the data analysis unit 612. The data analysis unit 612 performs data analysis by PCA on the data stored in the data storage unit, calculates indices such as residual sum of squares, principal component scores, principal component score sums of squares, and the index is a predetermined threshold value. Is monitored. If the index as a result of the data analysis does not exceed a predetermined threshold, it is determined that the device state is not abnormal (normal state), and if it exceeds the predetermined threshold, the device state is determined to be abnormal. . The sampling control unit 614 determines whether or not the apparatus state is abnormal based on the determination result by the data analysis unit 612.

  If it is determined in step S116 that the apparatus state is not abnormal, the sampling period storage means 650 is accessed in step S120, and the sampling period TA1 corresponding to the idling state ST1 is read. Then, the sampling control means 614 transmits a control signal to each MC 340A, 340B, 340C,... So that the data measured by each measuring instrument 350A, 350B, 350C,.

  On the other hand, if it is determined in step S116 that the apparatus state is an abnormal state, the sampling period storage unit 650 is accessed in step S122, and the sampling period TA2 corresponding to the idling state ST1 after the occurrence of the abnormality is set. read out. Then, the sampling control means 614 transmits a control signal to each MC 340A, 340B, 340C,... So that the data measured by each measuring instrument 350A, 350B, 350C,. In this case, the sampling period TA1 is changed to the sampling period TA2, and the sampling data amount increases.

  If it is determined in step S110 that the apparatus state is the substrate processing execution state, it is determined in step S118 whether or not the apparatus state is an abnormal state. If it is determined in step S118 that the apparatus state is not an abnormal state, the sampling period storage unit 650 is accessed in step S130, and the sampling period TB1 corresponding to the substrate processing execution state ST2 is read. Then, the sampling control means 614 transmits a control signal to each MC 340A, 340B, 340C,... So that the data measured by each measuring instrument 350A, 350B, 350C,.

  On the other hand, if it is determined in step S118 that the apparatus state is abnormal, the sampling period storage unit 650 is accessed in step S132, and the sampling period corresponding to the substrate processing execution state ST2 after the abnormality has occurred. Read TB2. Then, the sampling control means 614 transmits a control signal to each MC 340A, 340B, 340C,... So that the data measured by each measuring instrument 350A, 350B, 350C,. In this case, the sampling period TB1 is changed to the sampling period TB2, and the amount of sampling data increases.

  FIG. 15 is a waveform diagram showing changes in the sampling period due to the MCs 340A, 340B, 340C,... When an abnormality occurs in the substrate processing apparatus 100 in the substrate processing execution state ST2. Note that the sampling period is also changed in the same manner as in FIG. 15 when an abnormality occurs in the substrate processing apparatus 100 in the idling state ST1. The illustration is omitted here. As shown in the figure, each of MCs 340A, 340B, 340C,... Controlled by the sampling control means 614 has a sampling period TB1 (no abnormality occurs in the substrate processing apparatus 100 in the substrate processing execution state ST2). For example, the measurement data is sampled at 100 ms), and the measurement data is sampled at a sampling period TB2 (for example, 10 ms) shorter than the time from when the abnormality occurred in the substrate processing apparatus 100. At this time, the amount of sampling data increases 10 times per unit time.

  In this way, the data sampled by the MCs 340A, 340B, 340C,... In the substrate processing apparatus 100 is transmitted by the communication means 360 to the communication means 660 of the data processing apparatus 600 via the network 400. In the data processing device 600, the sampling data received by the communication unit 360 in step S140 is sequentially stored in the data storage unit 640.

  Next, in step S150, it is determined whether or not to end the data collection process. If it is determined in step S150 that the data collection is not terminated, the process returns to the above-described step S110, and if it is determined that the data collection is terminated, the series of data collection processes is terminated.

  In the third embodiment, the data stored in the data storage unit 640 is analyzed, and based on the analysis result, it is determined whether or not the state of the substrate processing apparatus 100 is an abnormal state, and the sampling cycle is changed. As described above, the data stored in the data storage unit 640 is analyzed, the state of the substrate processing apparatus 100 is predicted based on the analysis result, and the sampling period is changed based on the prediction result. Good.

  Specifically, for example, the data analysis unit 612 analyzes the data stored in the data storage unit 640 by the above-described PLS method or the like, and a component (for example, an upper electrode or a focus ring) provided in the processing chamber based on the analysis result. Etc.). Then, it is determined whether or not the device state is a component consumption state, and whether or not the predicted consumption level exceeds a preset threshold value. If the threshold value is exceeded, sampling is performed more than when the threshold value is not exceeded. The amount of data may be increased by shortening the cycle.

  In this case, for example, in step S116 of FIG. 14, it is determined not only whether the apparatus state is an abnormality occurrence state but also whether the apparatus state is a component consumption state. If the device state is a component consumption state, that is, if the predicted consumption level does not exceed a preset threshold value, the sampling period is set to TA1 in step S120, and if the threshold value is exceeded, the process proceeds to step S122. The sampling period is TA2. In step S118 of FIG. 14, it is also determined whether or not the apparatus state is a component consumption state as in the case of step S116. As a result, the amount of data can be increased not only when the apparatus state of the substrate processing apparatus 100 is in an abnormal state but also in a component consumption state.

  As described above, when the data analysis result by the data analysis unit 612 exceeds a predetermined threshold value, it is preferable to acquire more data from the substrate processing apparatus 100 and further improve the accuracy of the analysis result. For example, when data analysis is related to abnormality detection, state prediction, and wafer processing result prediction of the substrate processing apparatus 100, if the accuracy of the data analysis result is high, the state of the substrate processing apparatus 100 can be determined more accurately. Predictions can also be made accurately. In addition, when the data analysis relates to the consumption prediction of the components of the substrate processing apparatus 100, the replacement timing of the components can be accurately determined if the accuracy of the data analysis results is high. Further, when the data analysis relates to the processing result prediction of the wafer W, if the accuracy of the result of the data analysis is high, the processing result can be predicted accurately, so that the operation of the substrate processing apparatus 100 can be appropriately monitored, and the result As a result, the production yield of the wafer W can be improved.

  In this regard, according to the present embodiment, the sampling period is changed according to the data analysis result. Specifically, when the data analysis result exceeds a predetermined threshold, the sampling period is shortened so that more sampling data is acquired. Thereby, the accuracy of data analysis after the data analysis result exceeds a predetermined threshold can be further enhanced. As a result, it is possible to improve the accuracy of the state prediction of the substrate processing apparatus 100, the component consumption prediction, and the processing result prediction of the wafer W.

  In the present embodiment, a single threshold is set for the data analysis result, and the sampling period is changed depending on whether or not the threshold is exceeded. The sampling period may be changed every time the value exceeds the threshold. According to this, for example, when the degree of abnormality of the substrate processing apparatus 100 increases, the sampling period can be shortened and more detailed investigation of the cause of abnormality can be performed.

(Fourth embodiment)
Next, data collection processing according to the fourth embodiment of the present invention will be described with reference to the drawings. In the fourth embodiment, a case will be described in which, for example, a cycle for sampling measurement signals obtained from the processing chambers 200A to 200D of the substrate processing apparatus 100 illustrated in FIG. 1 is set for each of the processing chambers 200A to 200D.

  FIG. 15 is a data table showing the relationship between the sampling period stored in the sampling period storage means 650 and the apparatus state. In the data table shown in FIG. 15, the relationship between the sampling period and the apparatus state is stored for each of the processing chambers 200A to 200D.

  For example, for the processing chamber 200A, the sampling period TAA1 (eg, 1 s) is set in the idling state ST1 before the abnormality occurs, and the sampling period TAA2 (eg, 10 ms) is set in the idling state ST1 after the abnormality occurs. The Further, the sampling cycle TAB1 (for example, 100 ms) is set in the substrate processing execution state ST2 before the abnormality occurs, and the sampling cycle TAB2 (for example, 10 ms) is set in the substrate processing execution state ST2 after the abnormality has occurred. . In the start-up state ST3, a sampling cycle TAC (for example, 100 ms) is set.

  Also for the processing chamber 200B, the sampling periods TBA1, TBA2, TBB1, TBB2, and TBC are set as in the case of the processing chamber 200A. Similarly, sampling periods TCA1, TCA2, TCB1, TCB2, and TCC are set for the processing chamber 200C, and sampling periods TDA1, TDA2, TDB1, TDB2, and TDC are sequentially set for the processing chamber 200D.

  By the way, in the substrate processing apparatus 100, the same process processing may be performed in all the processing chambers 200A to 200D, but different process processing may be performed for each processing chamber. For example, the etching process may be performed on the wafer W in the processing chambers 200A and 200B, and the film forming process may be performed in the processing chambers 200C and 200D. In this case, if the measurement signals obtained from all the processing chambers are sampled at the same cycle, the amount of sampling data may be excessive or insufficient with respect to the amount of data necessary for obtaining a highly accurate data analysis result. In addition, if the amount of sampling data is too large in a certain processing chamber, the storage capacity of the data storage means 640 becomes insufficient, and short-time data analysis becomes difficult. Conversely, if the amount of sampling data for a certain processing chamber is too small, accurate data analysis results for that processing chamber cannot be obtained.

  According to this embodiment, since the sampling period can be set for each processing chamber, it is possible to acquire the minimum data necessary for data analysis according to the process processing performed in the processing chamber. Therefore, more accurate analysis results can be obtained efficiently while suppressing the consumption of the storage capacity of the data storage means 640.

  In the fourth embodiment, the case where the sampling period is set for each of the processing chambers 200A to 200D has been described. However, modules other than the processing chamber, specifically, the transfer chamber 130, the orienter 136, the common transfer chamber 150, and the load lock are described. A sampling period may be set for each of the chambers 160M and 160N.

  It should be noted that only the substrate processing apparatus 100 may be connected to the network 400, and a plurality of substrate processing apparatuses of the same type as described above may be connected as other substrate processing apparatuses. Moreover, you may make it connect other types of substrate processing apparatuses, such as a heat processing apparatus and sputtering apparatus.

  The data processing apparatus 600 may be configured as an advanced group controller (hereinafter referred to as “AGC”), for example, and may perform data collection processing for each substrate processing apparatus using the AGC. The AGC may perform centralized management of recipes (process condition values) of the respective substrate processing apparatuses 100 in addition to the data collection process described above. The AGC may be composed of a single computer or a plurality of computers. Further, the functions may be distributed to the server and the client.

  In this case, the communication unit 360 of the substrate processing apparatus 100 is configured as, for example, a RAP (Remote Agent Process) that is a logical interface unit with the AGC, and exchanges various data with the AGC through the RAP. 400 may be performed.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are of course within the technical scope of the present invention. Understood.

  For example, in the first to fourth embodiments, the sampling period may be changed for each type of measurement signal (for example, parameter signal, optical signal, electrical signal). According to this, more precise sampling control is realized, and the consumption of the storage capacity of the data storage means 640 can be further suppressed.

  In the first to fourth embodiments, the sampling period is stored in advance in the table format in the sampling period storage unit 650. However, depending on the total storage capacity or the free capacity of the data storage unit 640, The sampling period stored in the data storage unit 640 may be dynamically updated.

  In the first to fourth embodiments, the case where the sampling control unit 614 is provided in the data processing apparatus 600 has been described. However, the present invention is not necessarily limited thereto. 100 control units 300 may be provided.

  The present invention is applicable to a data collection method, a substrate processing apparatus, and a substrate processing system.

It is a top view which shows schematic structure of the substrate processing apparatus concerning 1st Embodiment of this invention. It is a block diagram which shows the structural example of the process chamber concerning the embodiment, and its peripheral device. It is a block diagram which shows the structure of the control part with which the substrate processing apparatus of FIG. 1 was equipped. It is a block diagram which shows the structure of the data processor concerning the embodiment. It is a state transition diagram of the substrate processing apparatus concerning the embodiment. It is a figure which shows the content of the data table which the sampling period memory | storage means of the data processor of FIG. 4 memorize | stores. It is a flowchart which shows the example of the data collection process concerning the embodiment. It is a wave form diagram which shows the relationship between the state of the substrate processing apparatus of FIG. 1, and a sampling period. It is a state transition diagram of the substrate processing apparatus concerning a 2nd embodiment of the present invention. It is a figure which shows the content of the data table which the sampling period memory | storage means of the data processor concerning the embodiment memorize | stores. It is a flowchart which shows the example of the data collection process concerning the embodiment. It is a wave form diagram which shows the relationship between the state of the substrate processing apparatus concerning the same embodiment, and a sampling period. It is a figure which shows the content of the data table which the sampling period memory | storage means of the data processor concerning 3rd Embodiment of this invention memorize | stores. It is a flowchart which shows the example of the data collection process concerning the embodiment. It is a wave form diagram which shows the relationship between the state of the substrate processing apparatus concerning the same embodiment, and a sampling period. It is a figure which shows the content of the data table which the sampling period memory | storage means of the data processor concerning 4th Embodiment of this invention memorize | stores.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Substrate processing apparatus 110 Processing unit 120 Transfer unit 130 Transfer chamber 132 (132A-132C) Cassette container 134 (134A-134C) Cassette stand 136 Orienter 150 Common transfer chamber 160 (160M, 160N) Load lock chamber 170 Transfer unit side transfer mechanism 180 processing unit side transport mechanism 200 (200A to 200D) processing chamber 201 processing container 202 lower electrode 204 upper electrode 204A gas introduction unit 204D matching unit 204E high frequency power source 206 gate valve 207 high frequency power source 207a voltmeter 207A matching unit 207B watt meter 207C electricity Measuring instrument 208 Electrostatic chuck 209 DC power supply 209a Power meter 214 Refrigerant piping 215B Pressure gauge 218 Process gas supply system 219 Exhaust system 220 Optical measuring instrument 300 Unit 310 Device control unit 340A, 340B, 340C Module control unit 342 Parameter signal sampling means 344 Optical signal sampling means 346 Electrical signal sampling means 350A, 350B, 350C Measuring instrument 352 Parameter signal measuring instrument 354 Optical signal measuring instrument 356 Electric Signal measuring device 360 communication means 370 switching hub 400 network 500 host computer 600 data processing device 610 operation means 612 analysis means 614 sampling control means 620 program storage means 630 model storage means 640 data storage means 650 sampling period storage means 660 communication means ST0 Stop state ST1 Idling state ST2 Substrate processing execution state ST3 Startup state W Wafer

Claims (11)

A data collection method for a substrate processing apparatus comprising a processing chamber for performing a predetermined process on a substrate to be processed, and collecting data from at least a plurality of measuring instruments provided in the processing chamber,
Obtaining measurement data from the measuring instrument at a predetermined sampling period and storing it in the data storage means;
A data collection method, wherein the sampling period is changed according to a state of the substrate processing apparatus. Determining whether the state of the substrate processing apparatus is a substrate processing execution state;
2. The data collection method according to claim 1, wherein when the state of the substrate processing apparatus is not a substrate processing execution state, the sampling cycle is made longer than when the substrate processing execution state is set. Even if the state of the substrate processing apparatus is not the substrate processing execution state, if the apparatus is in the startup state, it should be at least the same as or shorter than the sampling cycle in the substrate processing execution state. The data collection method according to claim 2. A data collection method for a substrate processing apparatus comprising a processing chamber for performing a predetermined process on a substrate to be processed, and collecting data from at least a plurality of measuring instruments provided in the processing chamber,
Obtaining measurement data from the measuring instrument at a predetermined sampling period and storing it in the data storage means;
Analyzing the measurement data stored in the data storage means, and determining whether or not the state of the substrate processing apparatus is an abnormal state based on the analysis result, the state of the substrate processing apparatus is an abnormal state In this case, the data collection method is characterized in that the sampling cycle is made shorter than that in the case of no abnormal state. A data collection method for a substrate processing apparatus comprising a processing chamber for performing a predetermined process on a substrate to be processed, and collecting data from at least a plurality of measuring instruments provided in the processing chamber,
Obtaining measurement data from the measuring instrument at a predetermined sampling period and storing it in the data storage means;
Analyzing the measurement data stored in the data storage means, predicting the state of the substrate processing apparatus based on the analysis result, and changing the sampling period based on the prediction result Method. Was the measurement data stored in the data storage means analyzed, predicted the wear level of the parts provided in the processing chamber based on the analysis result, and whether the predicted wear level exceeded a preset threshold? 6. The data collection method according to claim 5, wherein if the threshold is exceeded, the sampling period is made shorter than when the threshold is not exceeded. A data collection method for a substrate processing apparatus comprising a plurality of processing chambers for processing a substrate to be processed, and collecting data from at least a plurality of measuring instruments provided in each processing chamber,
For each processing chamber, having a step of acquiring measurement data from the measuring instrument at a predetermined sampling period and storing it in a data storage means;
A data collection method comprising: analyzing the measurement data stored in the data storage means; and changing a sampling cycle for each processing chamber based on the analysis result. A substrate processing apparatus including a processing chamber for performing predetermined processing on a substrate to be processed,
A plurality of measuring instruments provided at least in the processing chamber;
Sampling means for acquiring measurement data from the measuring instrument at a predetermined sampling period;
Data storage means for storing the measurement data;
Sampling period storage means for storing a sampling period in advance for each different state of the substrate processing apparatus;
Sampling control means for performing control to change the sampling period to the sampling period acquired from the sampling period storage means based on the state of the substrate processing apparatus;
A substrate processing apparatus comprising: A substrate processing apparatus including a processing chamber for performing predetermined processing on a substrate to be processed,
A plurality of measuring instruments provided at least in the processing chamber;
Sampling means for acquiring measurement data from the measuring instrument at a predetermined sampling period;
Data storage means for storing the measurement data;
Data analysis means for analyzing measurement data stored in the data storage means;
Sampling control means for performing control to change the sampling period in accordance with an analysis result by the data analysis means;
A substrate processing apparatus comprising: A network comprising: a processing chamber for performing a predetermined process on a substrate to be processed; a substrate processing apparatus having at least a plurality of measuring instruments provided in the processing chamber; and a data processing apparatus for processing data from the plurality of measuring instruments A substrate processing system connected at
The substrate processing apparatus includes sampling means for acquiring measurement data from the measuring instrument at a predetermined sampling period, and communication means for transmitting the acquired measurement data to the data processing apparatus via the network,
The data processing apparatus includes: a communication unit that receives measurement data from the substrate processing apparatus; a data storage unit that stores the received measurement data; a data analysis unit that analyzes the measurement data stored in the data storage unit; And a sampling control means for performing control to change the sampling period in accordance with an analysis result by the data analysis means. A processing chamber for performing a predetermined process on a substrate to be processed, a substrate processing apparatus including at least a plurality of measuring instruments provided in the processing chamber, a data processing apparatus for processing data from the plurality of measuring instruments, and a host A substrate processing system connected to a computer via a network,
The substrate processing apparatus includes sampling means for acquiring measurement data from the measuring instrument at a predetermined sampling period, and communication means for transmitting the acquired measurement data to the data processing apparatus via the network,
The data processing apparatus comprises: a communication means for receiving a signal from the host computer and measurement data from the substrate processing apparatus; a data storage means for storing the received measurement data; and the substrate processing based on the signal from the host computer. A substrate processing system comprising: a sampling control means for determining a state of the apparatus and performing control for changing the sampling period in accordance with the state.

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