JP2008034315A - Led illumination fixture - Google Patents

Led illumination fixture Download PDF

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JP2008034315A
JP2008034315A JP2006208839A JP2006208839A JP2008034315A JP 2008034315 A JP2008034315 A JP 2008034315A JP 2006208839 A JP2006208839 A JP 2006208839A JP 2006208839 A JP2006208839 A JP 2006208839A JP 2008034315 A JP2008034315 A JP 2008034315A
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light
led
substrate
emitting device
package
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JP4720665B2 (en
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Kazuji Yoshida
和司 吉田
Masanao Kamakura
將有 鎌倉
Masao Kirihara
昌男 桐原
Takeshi Nakasuji
威 中筋
Kenichiro Tanaka
健一郎 田中
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED illumination fixture capable of improving accuracies of light color and color temperature of mixed color light obtained as the whole fixture without necessity to provide a light guide member separately from a light-emitting device. <P>SOLUTION: This is provided with a fixture main body 110, a plurality of light-emitting devices A in which light detecting elements 4 to detect light emitted from LED chips 1 in a package B are installed at the package B where the LED chips 1 are housed and which are retained at the fixture main body 110, and a control part 160 to control light output of the LED chips 1 in the package B where the light detecting elements 4 are installed based on the output of the light detecting elements 4. As for the light-emitting device A, the plurality of kinds of the LED chips 1 having different light-emitting colors are housed in the package B, and the plurality of the light detecting elements 4 to respectively and separately detecting the light emitted from the LED chips 1 having respective light-emitting colors are installed at the package B. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、発光色の異なる複数種のLEDチップを用いて所望の混色光を得るようにしたLED照明器具に関するものである。   The present invention relates to an LED lighting apparatus that uses a plurality of types of LED chips having different emission colors to obtain desired mixed color light.

従来から、発光色の異なる複数種のLED(例えば、赤色LED、緑色LED、青色LED)を実装した回路基板と、回路基板などが収納される器具本体と、回路基板における各LEDの実装面側に配置される光学部材とを備えたLED照明器具が提案されている(例えば、特許文献1参照)。   Conventionally, a circuit board on which a plurality of types of LEDs having different emission colors (for example, red LED, green LED, blue LED) are mounted, an instrument body in which the circuit board is stored, and a mounting surface side of each LED on the circuit board There has been proposed an LED lighting apparatus including an optical member disposed on the surface (for example, see Patent Document 1).

ここにおいて、上記特許文献1に開示されたLED照明器具は、各発光色ごとのLEDの光出力の経時変化や温度依存性の違いなどによらず所望の光色や色温度の混色光(例えば、白色光)を維持するために、全てのLEDの光出力を検出するフォトダイオードなどからなる光検出装置と、各LEDから放射された光を光検出装置へ導光するための光ファイバと、光検出装置により検出された各発光色ごとのLEDの光出力が予め設定された目標値に保たれるように駆動回路部を介して各発光色ごとにLEDへの順方向電流の通電量をフィードバック制御する制御部とを備えている。なお、上記特許文献1に開示されたLED照明器具では、赤色LED群の光出力と緑色LED群の光出力と青色LED群の光出力とを1つの光検出装置により各別に測定するために、赤色LED群のみが点灯する期間と緑色LED群のみが点灯する期間と青色LED群のみが点灯する期間とが時系列的に現れるように、制御部が駆動回路部を制御するようになっている。
特表2002−533870号公報
Here, the LED lighting apparatus disclosed in the above-mentioned Patent Document 1 is a mixed color light (for example, a desired light color or color temperature) regardless of a temporal change of LED light output for each light emission color or a difference in temperature dependency. In order to maintain white light), a photodetection device composed of a photodiode that detects the light output of all LEDs, an optical fiber for guiding light emitted from each LED to the photodetection device, The amount of forward current applied to the LED for each luminescent color via the drive circuit unit is maintained so that the light output of the LED for each luminescent color detected by the light detection device is maintained at a preset target value. And a control unit that performs feedback control. In addition, in the LED lighting apparatus disclosed in Patent Document 1, in order to measure the light output of the red LED group, the light output of the green LED group, and the light output of the blue LED group separately by one light detection device, The control section controls the drive circuit section so that a period in which only the red LED group is lit, a period in which only the green LED group is lit, and a period in which only the blue LED group is lit appear in time series. .
JP 2002-533870 A

しかしながら、上記特許文献1に開示されたLED照明器具では、各LEDから放射された光を1本の光ファイバを介して伝搬させるように構成されているので、全てのLEDの光を光検出装置により安定して検出することが難しく、器具全体として得られる混色光の光色や色温度の精度が低くなってしまう。また、上記特許文献1に開示されたLED照明器具では、LEDチップおよび当該LEDチップを収納した砲弾型のパッケージとからなる発光装置とは別に、発光装置から出射された光の一部を光検出装置へ導光させる光ファイバのような導光部材を別途に設ける必要があり、器具本体内に導光部材を収納するためのスペースを確保する必要があり、器具本体の薄型化が難しかった。   However, the LED lighting apparatus disclosed in Patent Document 1 is configured to propagate the light emitted from each LED through one optical fiber, so that the light of all LEDs is detected by the light detection device. Therefore, it is difficult to detect stably, and the accuracy of the light color and color temperature of the mixed color light obtained as the whole instrument is lowered. In addition, in the LED lighting apparatus disclosed in Patent Document 1, a part of light emitted from the light emitting device is detected separately from the light emitting device including the LED chip and a shell type package containing the LED chip. It is necessary to separately provide a light guide member such as an optical fiber for guiding light to the apparatus, and it is necessary to secure a space for housing the light guide member in the instrument main body, making it difficult to reduce the thickness of the instrument main body.

本発明は上記事由に鑑みて為されたものであり、その目的は、発光装置とは別途に導光部材を設ける必要がなく、器具全体として得られる混色光の光色や色温度の精度を向上することができるLED照明器具を提供することにある。   The present invention has been made in view of the above reasons, and its purpose is not to provide a light guide member separately from the light emitting device, and to improve the accuracy of the light color and color temperature of the mixed color light obtained as a whole instrument. It is in providing the LED lighting fixture which can be improved.

請求項1の発明は、発光色の異なる複数種のLEDチップを用いて所望の混色光を得るようにした照明器具であって、器具本体と、LEDチップを収納したパッケージに当該パッケージ内のLEDチップから放射される光を検出する光検出素子が設けられ器具本体に保持された複数の発光装置と、光検出素子の出力に基づいて当該光検出素子が設けられているパッケージ内のLEDチップの光出力を制御する制御部とを備えてなることを特徴とする。   The invention of claim 1 is a lighting fixture that obtains a desired mixed color light by using a plurality of types of LED chips having different emission colors, and the LEDs in the package are stored in the fixture main body and the package containing the LED chips. A plurality of light-emitting devices provided with a light detection element for detecting light emitted from the chip and held in the instrument body, and an LED chip in a package in which the light detection element is provided based on the output of the light detection element And a control unit for controlling the light output.

この発明によれば、各発光装置が、LEDチップを収納したパッケージに当該パッケージ内のLEDチップから放射される光を検出する光検出素子を備えているので、発光装置とは別途に導光部材を設ける必要がなく、発光装置の配置設計によらずLEDチップから放射される光を当該LEDチップが収納されたパッケージに設けられた光検出素子により安定して精度良く検出することができ、器具全体として得られる混色光の光色や色温度の精度を向上することができる。   According to this invention, since each light emitting device includes the light detection element that detects light emitted from the LED chip in the package in the package in which the LED chip is accommodated, the light guide member is provided separately from the light emitting device. The light emitted from the LED chip can be stably and accurately detected by the light detecting element provided in the package in which the LED chip is housed, regardless of the layout design of the light emitting device. The accuracy of the light color and color temperature of the mixed color light obtained as a whole can be improved.

請求項2の発明は、請求項1の発明において、発光装置は、発光色の異なる複数種のLEDチップがパッケージ内に収納されるとともに、各発光色のLEDチップから放射される光を各別に検出する複数の光検出素子がパッケージに設けられてなることを特徴とする。   According to a second aspect of the present invention, in the light emitting device according to the first aspect of the invention, a plurality of types of LED chips having different emission colors are accommodated in the package, and light emitted from the LED chips of the respective emission colors is separately provided. A plurality of light detection elements to be detected are provided in a package.

この発明によれば、各発光装置それぞれにおいて発光色の異なる複数種のLEDチップから放射される光を各別に検出でき、各発光装置ごとに混色光の光色および色温度を制御することができるので、発光装置の配置設計の自由度が高くなる。   According to the present invention, light emitted from a plurality of types of LED chips having different emission colors can be individually detected in each light emitting device, and the light color and color temperature of mixed light can be controlled for each light emitting device. Therefore, the degree of freedom in the layout design of the light emitting device is increased.

請求項3の発明は、請求項1または請求項2の発明において、制御部は、各発光装置それぞれのパッケージに設けられてなることを特徴とする。   According to a third aspect of the present invention, in the first or second aspect of the present invention, the control unit is provided in a package of each light emitting device.

この発明によれば、各発光装置とは別に制御部を設ける必要がないので、回路基板などへの各発光装置の配置設計が容易になる。   According to the present invention, since it is not necessary to provide a control unit separately from each light emitting device, the layout design of each light emitting device on a circuit board or the like is facilitated.

請求項1の発明では、発光装置とは別途に導光部材を設ける必要がなく、器具全体として得られる混色光の光色や色温度の精度を向上することができるという効果がある。   According to the first aspect of the present invention, there is no need to provide a light guide member separately from the light emitting device, and there is an effect that it is possible to improve the accuracy of the light color and color temperature of the mixed color light obtained as the whole instrument.

(実施形態1)
以下、本実施形態のLED照明器具について図1〜図9を参照しながら説明する。
(Embodiment 1)
Hereinafter, the LED lighting fixture of this embodiment is demonstrated, referring FIGS.

本実施形態のLED照明器具は、シーリングライトであり、天井材のような造営材200に取り付けられる円盤状の器具本体110(図1(a)、図2、図6参照)を備えている。器具本体110は、造営材200側とは反対側の一面(図1(a)の下面)に円形状に開口した凹所111が形成され、さらに凹所111の内底面に、複数個(本実施形態では、8個)の発光装置Aを実装した円板状のプリント配線板からなる回路基板130を収納する収納凹所112が形成されている。   The LED lighting apparatus of the present embodiment is a ceiling light and includes a disk-shaped apparatus main body 110 (see FIGS. 1A, 2 and 6) attached to a construction material 200 such as a ceiling material. The instrument body 110 is formed with a recess 111 having a circular opening on one surface (the lower surface in FIG. 1A) opposite to the construction material 200 side, and a plurality of (main) on the inner bottom surface of the recess 111. In the embodiment, an accommodation recess 112 for accommodating a circuit board 130 made of a disk-shaped printed wiring board on which eight light-emitting devices A are mounted is formed.

ここにおいて、本実施形態のLED照明器具では、回路基板130を器具本体110に取り付けることにより、各発光装置Aが器具本体110に保持されている。本実施形態では、回路基板130を器具本体110に取り付けるにあたって、シリカやアルミナなどのフィラーからなる充填材を含有し且つ加熱時に低粘度化する樹脂シート(例えば、溶融シリカを高充填したエポキシ樹脂シートのような有機グリーンシート)からなるシート状の接合用部材(図示せず)を回路基板130と器具本体110の収納凹所112の内底面との間に介在させて両者を接合しているが、ねじなどの固定具を用いて回路基板130を器具本体110に取り付けるようにしてもよい。なお、器具本体110は、例えば、Al、Cuなどの熱伝導率の高い金属材料により形成されている。   Here, in the LED lighting fixture of this embodiment, each light-emitting device A is held by the fixture main body 110 by attaching the circuit board 130 to the fixture main body 110. In this embodiment, when the circuit board 130 is attached to the instrument main body 110, a resin sheet containing a filler made of a filler such as silica or alumina and having a low viscosity when heated (for example, an epoxy resin sheet highly filled with fused silica) A sheet-like joining member (not shown) made of an organic green sheet) is interposed between the circuit board 130 and the inner bottom surface of the housing recess 112 of the instrument body 110 to join them together. Alternatively, the circuit board 130 may be attached to the instrument main body 110 using a fixing tool such as a screw. The instrument body 110 is made of a metal material having high thermal conductivity such as Al or Cu.

器具本体110の他面(図1(a)の上面)の中央部には造営材200に形成された円形状の取付孔201に挿入される円柱状の埋込部113が突設されており、器具本体110は、回路基板130への給電用の2本の電線196を収納凹所112内へ導入するための電線挿通孔114が、埋込部113の先端面と収納凹所112の内底面の中央部との間の部位に貫設されている。要するに、器具本体110は、収納凹所112の底部に電線挿通孔114が貫設されている。なお、各電線196における回路基板130に接続される一端側とは反対の他端側には、別置の電源ユニット(図示せず)の出力用の第1のコネクタ(図示せず)に着脱自在に接続される第2のコネクタ197が設けられている。   At the center of the other surface of the instrument main body 110 (the upper surface in FIG. 1A), a cylindrical embedding portion 113 to be inserted into a circular mounting hole 201 formed in the construction material 200 is projected. The instrument main body 110 has a wire insertion hole 114 for introducing two electric wires 196 for supplying power to the circuit board 130 into the storage recess 112, and the inner end of the embedded portion 113 and the storage recess 112. It penetrates in the site | part between the center part of a bottom face. In short, the instrument main body 110 has a wire insertion hole 114 formed through the bottom of the storage recess 112. In addition, the other end side opposite to the one end side connected to the circuit board 130 in each electric wire 196 is attached to and detached from a first connector (not shown) for output of a separate power supply unit (not shown). A second connector 197 that is freely connected is provided.

また、上述の器具本体110には、当該器具本体110を造営材200に取り付けるための複数(本実施形態では、2つ)の取付ねじ118それぞれを上記一面側から挿通する複数(本実施形態では、2つ)のねじ挿通孔115が凹所111の内底面と器具本体110の上記他面との間の部位に貫設されている。したがって、天井材などの造営材200に取付ねじ118を用いて器具本体110を取り付けることができる。   In addition, a plurality of (in this embodiment, two) mounting screws 118 for attaching the tool body 110 to the construction material 200 are inserted into the above-described tool body 110 from the one surface side (in this embodiment). Two) screw insertion holes 115 are provided in a portion between the inner bottom surface of the recess 111 and the other surface of the instrument body 110. Therefore, the instrument main body 110 can be attached to the construction material 200 such as a ceiling material using the attachment screw 118.

また、本実施形態のLED照明器具は、回路基板130の一表面側(図1(a)の下面側)に配置される透光性カバー140と、器具本体110の上記一面側において収納凹所112の周部および各取付ねじ118を覆う形で器具本体110に取着される枠状の化粧カバー150を備えている。   In addition, the LED lighting apparatus of the present embodiment includes a translucent cover 140 disposed on one surface side of the circuit board 130 (the lower surface side in FIG. 1A), and a storage recess on the one surface side of the apparatus body 110. A frame-shaped decorative cover 150 is provided to be attached to the instrument main body 110 so as to cover the peripheral portion 112 and the mounting screws 118.

透光性カバー140(図1(a)、図2、図7参照)は、回路基板130の上記一表面側において回路基板130から離間して配置される前板部140aと、前板部140aの周縁から器具本体110の収納凹所111の内底面側へ連続一体に突出した円環状の側板部140bとを備えている。ここで、器具本体110には、透光性カバー140を固定するための固定ねじ119を挿通する2つのねじ挿通孔117が形成されており、透光性カバー140には、器具本体110の上記他面側から器具本体110のねじ挿通孔117に挿通された固定ねじ119の先端部が螺合するねじ孔140dを有する2つのボス部140cが連続一体に形成されている。なお、回路基板130の周部において各ボス部140cそれぞれに対応する部位には、切欠部が形成されている。   The translucent cover 140 (see FIG. 1A, FIG. 2 and FIG. 7) includes a front plate portion 140a disposed on the one surface side of the circuit board 130 and spaced apart from the circuit board 130, and a front plate portion 140a. And an annular side plate portion 140b protruding continuously and integrally from the peripheral edge of the housing main body 110 toward the inner bottom surface of the housing recess 111. Here, the instrument main body 110 is formed with two screw insertion holes 117 through which a fixing screw 119 for fixing the translucent cover 140 is inserted. Two boss portions 140c having screw holes 140d into which the tip ends of the fixing screws 119 inserted through the screw insertion holes 117 of the instrument main body 110 are screwed from the other surface side are integrally formed. Note that a cutout portion is formed in a portion corresponding to each boss portion 140 c in the peripheral portion of the circuit board 130.

また、化粧カバー150(図1(a)、図2、図8、図9参照)は、弾性を有する合成樹脂(例えば、PBT、ABSなど)を用いて形成されており、器具本体110に形成された複数の係合孔116(図6参照)それぞれに係合する複数の係止突起152が器具本体110との対向面から突設されている。すなわち、化粧カバー150は、各係止突起152それぞれを器具本体110の各係合孔116それぞれに挿入して各係合孔116の周部に係合させることにより器具本体110に取着される。ここにおいて、上述の透光性カバー140は、化粧カバー150の円形状の開口窓151を通して露出するようになっている。したがって、器具本体110を取付ねじ118を用いて造営材200に取り付けた後で、器具本体110に化粧カバー150を取り付ければ、器具本体110の上記一面側から取付ねじ118が見えなくなるので、見栄えを良くすることができる。なお、上述の化粧カバー150は合成樹脂の成形品により構成されているが、化粧カバー150を金属により形成すれば、化粧カバー150が合成樹脂により形成されている場合に比べて、各発光装置Aで発生した熱をより効果的に放熱させることができる。ここで、化粧カバー150を金属により形成する場合には、例えば、板ばねを利用して器具本体110に取り付けるような構造を採用することで器具本体110に対して着脱自在としてもよいし、器具本体110にねじ込んで取り付けるような構造を採用して器具本体110に対して着脱自在としてもよい。   Further, the decorative cover 150 (see FIGS. 1A, 2, 8, and 9) is formed using an elastic synthetic resin (for example, PBT, ABS, etc.) and formed on the instrument body 110. A plurality of locking projections 152 that respectively engage with the plurality of engagement holes 116 (see FIG. 6) are provided so as to protrude from the surface facing the instrument main body 110. That is, the decorative cover 150 is attached to the instrument main body 110 by inserting the respective locking projections 152 into the respective engagement holes 116 of the instrument main body 110 and engaging with the peripheral portions of the respective engagement holes 116. . Here, the above-described translucent cover 140 is exposed through the circular opening window 151 of the decorative cover 150. Therefore, if the decorative cover 150 is attached to the instrument main body 110 after the instrument main body 110 is attached to the construction material 200 using the attachment screws 118, the attachment screw 118 cannot be seen from the one surface side of the instrument main body 110. Can be better. The above-described decorative cover 150 is made of a synthetic resin molded product. However, if the decorative cover 150 is made of metal, each light emitting device A can be compared with the case where the decorative cover 150 is made of synthetic resin. The heat generated in can be dissipated more effectively. Here, when the decorative cover 150 is formed of metal, for example, a structure that is attached to the instrument main body 110 using a leaf spring may be employed, and the decorative cover 150 may be detachable from the instrument main body 110. A structure in which the main body 110 is screwed onto the main body 110 may be adopted to be detachable from the instrument main body 110.

また、各発光装置Aは、後述のように発光色の異なる複数種のLEDチップ1がパッケージBに収納されるとともにパッケージBに各発光色のLEDチップ1から放射された光を各別に検出するフォトダイオードよりなる光検出素子4が設けられており、上述の回路基板130には、各発光装置Aの他に、各発光装置Aの各LEDチップ1それぞれを駆動する駆動回路部(図示せず)と、光検出素子4の出力に基づいて当該光検出素子4が設けられているパッケージB内のLEDチップ1の光出力を制御するマイクロコンピュータなどからなる制御部160とが実装されている。ここにおいて、制御部160は、各光検出素子4の出力が所望の混色光に応じて予め設定された目標値となるように駆動回路部を介して各発光装置Aの各LEDチップ1それぞれへの順方向電流の通電量をフィードバック制御する。   In addition, each light emitting device A individually detects a plurality of types of LED chips 1 having different emission colors stored in the package B and light emitted from the LED chips 1 of each emission color in the package B as will be described later. A light detection element 4 made of a photodiode is provided, and on the circuit board 130 described above, in addition to each light emitting device A, a driving circuit unit (not shown) for driving each LED chip 1 of each light emitting device A. ) And a control unit 160 composed of a microcomputer or the like that controls the light output of the LED chip 1 in the package B in which the light detection element 4 is provided based on the output of the light detection element 4. Here, the control unit 160 supplies each LED chip 1 of each light emitting device A via the drive circuit unit so that the output of each light detection element 4 becomes a target value set in advance according to the desired mixed color light. The amount of forward current flowing through is feedback controlled.

以下、上述の発光装置Aについて図1〜図5に基づいて説明する。   Hereinafter, the above-described light-emitting device A will be described with reference to FIGS.

発光装置Aは、互いに発光色の異なる複数(本実施形態では、4つ)のLEDチップ1と、各LEDチップ1を収納する収納凹所2aが一表面に形成され収納凹所2aの内底面に各LEDチップ1が実装された実装基板2と、実装基板2の上記一表面側において収納凹所2aを閉塞する形で実装基板2に固着された透光性部材3と、実装基板2に設けられ各発光色のLEDチップ1から放射された光を各別に検出する複数(本実施形態では、4つ)の光検出素子4と、実装基板2の収納凹所2aに充填された透光性の封止樹脂(例えば、シリコーン樹脂、アクリル樹脂など)からなり各LEDチップ1および各LEDチップ1それぞれに接続されたボンディングワイヤ14を封止した封止部5と備えている。また、実装基板2は、上記一表面側において収納凹所2aの周部から内方へ突出した庇状の張出部2cを有しており、当該張出部2cに各光検出素子4が設けられている。なお、本実施形態では、実装基板2と透光性部材3とでパッケージBを構成しているが、透光性部材3は、必ずしも設けなくてもよく、必要に応じて適宜設ければよい。   In the light emitting device A, a plurality of (four in this embodiment) LED chips 1 having different emission colors and a storage recess 2a for storing each LED chip 1 are formed on one surface, and the inner bottom surface of the storage recess 2a. A mounting substrate 2 on which each LED chip 1 is mounted; a translucent member 3 fixed to the mounting substrate 2 so as to close the housing recess 2a on the one surface side of the mounting substrate 2; A plurality of (four in the present embodiment) light detection elements 4 that are provided and detect light emitted from the LED chips 1 of the respective emission colors, and a light transmission filled in the housing recess 2a of the mounting substrate 2 Each of the LED chips 1 and the bonding wire 14 connected to each LED chip 1 and a sealing portion 5 made of a conductive sealing resin (for example, silicone resin, acrylic resin). Further, the mounting substrate 2 has a hook-like protruding portion 2c protruding inward from the peripheral portion of the storage recess 2a on the one surface side, and each light detection element 4 is provided in the protruding portion 2c. Is provided. In the present embodiment, the package B is configured by the mounting substrate 2 and the translucent member 3, but the translucent member 3 is not necessarily provided, and may be appropriately provided as necessary. .

本実施形態における発光装置Aでは、4つのLEDチップ1として、発光色が赤色のLEDチップ1aと、発光色が緑色のLEDチップ1bと、発光色が青色のLEDチップ1cと、発光色が黄色のLEDチップ1dとを採用しており、赤色光と緑色光と青色光と黄色光の混色光として白色光を得ることができる。ただし、各LEDチップ1の発光色は特に限定するものではなく、所望の混色光に応じて適宜選択すればよい。   In the light emitting device A according to the present embodiment, as the four LED chips 1, the LED chip 1a having a red emission color, the LED chip 1b having a green emission color, the LED chip 1c having a blue emission color, and a yellow emission color. The LED chip 1d is used, and white light can be obtained as mixed light of red light, green light, blue light, and yellow light. However, the emission color of each LED chip 1 is not particularly limited, and may be appropriately selected according to the desired mixed color light.

実装基板2は、各LEDチップ1a〜1dが一表面側に搭載される矩形板状のLED搭載用基板20と、LED搭載用基板20の上記一表面側に対向配置され円形状の光取出窓41が形成されるとともに各光検出素子4が形成された光検出素子形成基板40と、LED搭載用基板20と光検出素子形成基板40との間に介在し光取出窓41に連通する矩形状の開口窓31が形成された中間層基板30とで構成されており、LED搭載用基板20と中間層基板30と光検出素子形成基板40とで囲まれた空間が上記収納凹所2aを構成している。ここにおいて、LED搭載用基板20および中間層基板30および光検出素子形成基板40の外周形状は矩形状であり、中間層基板30および光検出素子形成基板40はLED搭載用基板20と同じ外形寸法に形成されている。また、光検出素子形成基板40の厚み寸法はLED搭載用基板20および中間層基板30の厚み寸法に比べて小さく設定されている。なお、本実施形態では、LED実装用基板20が、各LEDチップ1a〜1dが搭載されるベース基板部を構成し、中間層基板30と光検出素子形成基板40とで、各LEDチップ1a〜1dを囲む形でベース基板部から突設された壁部2bを構成し、光検出素子形成基板40において中間層基板30の開口窓31上に張り出した部位が、上述の張出部2cを構成している。要するに、張出部2cは、壁部2bの先端部から内方へ突出している。   The mounting substrate 2 includes a rectangular plate-shaped LED mounting substrate 20 on which each LED chip 1a to 1d is mounted on one surface side, and a circular light extraction window disposed to face the one surface side of the LED mounting substrate 20 41 is formed, and a light detection element forming substrate 40 on which each light detection element 4 is formed, and a rectangular shape that is interposed between the LED mounting substrate 20 and the light detection element formation substrate 40 and communicates with the light extraction window 41. A space surrounded by the LED mounting substrate 20, the intermediate layer substrate 30, and the light detection element forming substrate 40 constitutes the housing recess 2a. is doing. Here, the outer peripheral shapes of the LED mounting substrate 20, the intermediate layer substrate 30, and the light detection element formation substrate 40 are rectangular, and the intermediate layer substrate 30 and the light detection element formation substrate 40 have the same outer dimensions as the LED mounting substrate 20. Is formed. Further, the thickness dimension of the light detection element forming substrate 40 is set smaller than the thickness dimension of the LED mounting substrate 20 and the intermediate layer substrate 30. In the present embodiment, the LED mounting substrate 20 constitutes a base substrate portion on which the LED chips 1a to 1d are mounted, and the intermediate layer substrate 30 and the light detection element formation substrate 40 constitute the LED chips 1a to 1d. A wall portion 2b that protrudes from the base substrate portion so as to surround 1d is formed, and a portion of the light detection element forming substrate 40 that protrudes above the opening window 31 of the intermediate layer substrate 30 constitutes the above-described protruding portion 2c. is doing. In short, the overhanging portion 2c protrudes inward from the tip end portion of the wall portion 2b.

上述のLED搭載用基板20、中間層基板30、光検出素子形成基板40は、それぞれ、導電形がn形で主表面が(100)面のシリコン基板20a,30a,40aを用いて形成してあり、中間層基板30の内側面が、アルカリ系溶液(例えば、TMAH溶液、KOH溶液など)を用いた異方性エッチングにより形成された(111)面により構成されており(つまり、中間層基板30は、開口窓31の開口面積がLED搭載用基板20から離れるにつれて徐々に大きくなっており)、LEDチップ1a〜1dから側方(壁部2b側)へ放射された光を前方(張出部2c側)へ反射するミラー2dを構成している。要するに、本実施形態では、中間層基板30が各LEDチップ1a〜1dから側方へ放射された光を前方へ反射させる枠状のリフレクタを兼ねている。   The LED mounting substrate 20, the intermediate layer substrate 30, and the light detection element formation substrate 40 described above are formed using silicon substrates 20 a, 30 a, and 40 a each having an n-type conductivity and a (100) plane main surface. In addition, the inner side surface of the intermediate layer substrate 30 is configured by a (111) plane formed by anisotropic etching using an alkaline solution (for example, TMAH solution, KOH solution, etc.) (that is, the intermediate layer substrate) 30, the opening area of the opening window 31 gradually increases as the distance from the LED mounting substrate 20 increases.) Light emitted from the LED chips 1 a to 1 d to the side (wall portion 2 b side) is forward (projected). This constitutes a mirror 2d that reflects to the part 2c side). In short, in the present embodiment, the intermediate layer substrate 30 also serves as a frame-like reflector that reflects light emitted from the LED chips 1a to 1d to the side.

LED搭載用基板20は、シリコン基板20aの一表面側(図1(b)における下面側)に、LEDチップ1a〜1dの両電極それぞれと電気的に接続される2つ1組の導体パターン25a,25aが4組形成されるとともに、中間層基板30に形成された2つの貫通孔配線34,34を介して光検出素子4と電気的に接続される2つ1組の導体パターン25b,25bが4組形成されており、各導体パターン25a,25a,25b,25bとシリコン基板20aの他表面側(図1(b)における上面側)に形成された各外部接続用電極27a,27a,27b,27bとがそれぞれ貫通孔配線24を介して電気的に接続されている。また、LED搭載用基板20は、シリコン基板20aの上記一表面側に、中間層基板30と接合するための接合用金属層29も形成されている。   The LED mounting substrate 20 is a set of two conductor patterns 25a electrically connected to each of the electrodes of the LED chips 1a to 1d on one surface side (the lower surface side in FIG. 1B) of the silicon substrate 20a. , 25a are formed, and a pair of conductor patterns 25b, 25b that are electrically connected to the photodetecting element 4 through two through-hole wirings 34, 34 formed in the intermediate layer substrate 30. Are formed, and each external connection electrode 27a, 27a, 27b formed on each conductor pattern 25a, 25a, 25b, 25b and the other surface side of the silicon substrate 20a (upper surface side in FIG. 1B). 27b are electrically connected to each other through the through-hole wiring 24. The LED mounting substrate 20 is also formed with a bonding metal layer 29 for bonding to the intermediate layer substrate 30 on the one surface side of the silicon substrate 20a.

本実施形態におけるLEDチップ1a〜1dは、結晶成長用基板として導電性基板を用い厚み方向の両面に電極(図示せず)が形成された可視光LEDチップであり、LED搭載用基板20は、各LEDチップ1a〜1dが電気的に接続される2つの導体パターン25a,25aのうちの一方の導体パターン25aを、LEDチップ1a〜1dがダイボンディングされる矩形状のダイパッド部25aaと、ダイパッド部25aaに連続一体に形成され貫通孔配線24との接続部位となる引き出し配線部25abとで構成してある。要するに、LEDチップ1a〜1dは、上記一方の導体パターン25aのダイパッド部25aaにダイボンディングされており、ダイパッド部25aa側の電極がダイパッド部25aaに接合されて電気的に接続され、光取り出し面側の電極がボンディングワイヤ14を介して他方の導体パターン25aと電気的に接続されている。ここで、本実施形態では、LEDチップ1a〜1dおよびダイパッド部25aaの平面視における外周形状を矩形状(図示例では、正方形状)としてあり、ダイパッド部25aaの平面サイズをLEDチップ1a〜1dの平面サイズよりもやや大きく設定してある。   The LED chips 1a to 1d in the present embodiment are visible light LED chips in which electrodes (not shown) are formed on both surfaces in the thickness direction using a conductive substrate as a crystal growth substrate. One of the two conductor patterns 25a, 25a to which the LED chips 1a to 1d are electrically connected is connected to a rectangular die pad portion 25aa to which the LED chips 1a to 1d are die-bonded, and a die pad portion. The lead wiring portion 25ab is formed integrally with 25aa and serves as a connection portion with the through-hole wiring 24. In short, the LED chips 1a to 1d are die-bonded to the die pad portion 25aa of the one conductor pattern 25a, and the electrodes on the die pad portion 25aa side are joined and electrically connected to the die pad portion 25aa, and the light extraction surface side The electrode is electrically connected to the other conductor pattern 25a through the bonding wire. Here, in the present embodiment, the outer peripheral shape of the LED chips 1a to 1d and the die pad portion 25aa in a plan view is a rectangular shape (in the illustrated example, a square shape), and the planar size of the die pad portion 25aa is the same as that of the LED chips 1a to 1d. It is set slightly larger than the plane size.

また、LED搭載用基板20は、シリコン基板20aの上記他表面側における各ダイパッド部25aaそれぞれの投影領域に、シリコン基板20aよりも熱伝導率の高い金属材料からなる矩形状の放熱用パッド部28が形成されており、シリコン基板20aの厚み方向において重なるダイパッド部25aaと放熱用パッド部28とがシリコン基板20aよりも熱伝導率の高い金属材料(例えば、Cuなど)からなる複数(本実施形態では、9つ)の円柱状のサーマルビア26を介して熱的に結合されており、LEDチップ1で発生した熱が各サーマルビア26および放熱用パッド部28を介して放熱されるようになっている。   Further, the LED mounting substrate 20 has a rectangular heat dissipation pad portion 28 made of a metal material having a higher thermal conductivity than the silicon substrate 20a in the projection region of each die pad portion 25aa on the other surface side of the silicon substrate 20a. In this embodiment, a plurality of die pad portions 25aa and heat radiation pad portions 28 that overlap in the thickness direction of the silicon substrate 20a are made of a metal material (for example, Cu) having a higher thermal conductivity than the silicon substrate 20a. In this case, the thermal coupling is performed through the nine (9) cylindrical thermal vias 26, and the heat generated in the LED chip 1 is radiated through the thermal vias 26 and the heat radiation pad 28. ing.

ところで、LED搭載用基板20は、シリコン基板20aに、上述の各貫通孔配線24それぞれが内側に形成される複数の貫通孔22aと、上述の各サーマルビア26それぞれが内側に形成される複数の貫通孔22bとが厚み方向に貫設され、シリコン基板20aの上記一表面および上記他表面と各貫通孔22a,22bの内面とに跨って熱酸化膜(シリコン酸化膜)からなる絶縁膜23が形成されており、各導体パターン25a,25a,25b,25b、接合用金属層29、各外部接続用電極27a,27a,27b,27b、各放熱用パッド部28、各貫通孔配線24および各サーマルビア26がシリコン基板20aと電気的に絶縁されている。なお、本実施形態では、各サーマルビア26用の貫通孔22bの開口形状および各貫通孔配線24用の貫通孔22aの開口形状を円形状としてあるが、サーマルビア26用の貫通孔22bの内径寸法を貫通孔配線24用の貫通孔22aの内径よりも大きく設定してあり、シリコン基板20aの厚み方向に直交する断面におけるサーマルビア26の断面積が貫通孔配線24の断面積よりも大きくなっている。   By the way, the LED mounting substrate 20 has a plurality of through holes 22a in which each of the above-described through-hole wirings 24 is formed inside and a plurality of each of the above-described thermal vias 26 are formed in the silicon substrate 20a. A through hole 22b is provided in the thickness direction, and an insulating film 23 made of a thermal oxide film (silicon oxide film) is formed across the one surface and the other surface of the silicon substrate 20a and the inner surfaces of the through holes 22a and 22b. The conductor patterns 25a, 25a, 25b, and 25b, the bonding metal layer 29, the external connection electrodes 27a, 27a, 27b, and 27b, the heat dissipation pad portions 28, the through-hole wirings 24, and the thermal elements are formed. The via 26 is electrically insulated from the silicon substrate 20a. In the present embodiment, the opening shape of the through hole 22b for each thermal via 26 and the opening shape of the through hole 22a for each through hole wiring 24 are circular, but the inner diameter of the through hole 22b for the thermal via 26 The dimension is set larger than the inner diameter of the through hole 22 a for the through hole wiring 24, and the cross sectional area of the thermal via 26 in the cross section perpendicular to the thickness direction of the silicon substrate 20 a is larger than the cross sectional area of the through hole wiring 24. ing.

また、LED搭載用基板20において、各導体パターン25a,25a,25b,25b、接合用金属層29、各外部接続用電極27a,27a,27b,27b、各放熱用パッド部28は、絶縁膜23上に形成されたTi膜と当該Ti膜上に形成されたAu膜との積層膜により構成されており、各導体パターン25a,25a,25b,25bと接合用金属層29とが同時に形成され、各外部接続用電極27a,27a,27b,27bと各放熱用パッド部28とが同時に形成されている。なお、本実施形態では、絶縁膜23上のTi膜の膜厚を15〜50nm、Ti膜上のAu膜の膜厚を500nmに設定してあるが、これらの数値は一例であって特に限定するものではない。また、各Au膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Au膜と絶縁膜23との間に密着性改善用の密着層としてTi膜を介在させてあるが、密着層の材料はTiに限らず、例えば、Cr、Nb、Zr、TiN、TaNなどでもよい。また、貫通孔配線24およびサーマルビア26の材料としては、Cuを採用しているが、Cuに限らず、例えば、Niなどを採用してもよい。   In addition, in the LED mounting substrate 20, the conductor patterns 25 a, 25 a, 25 b, 25 b, the bonding metal layer 29, the external connection electrodes 27 a, 27 a, 27 b, 27 b, and the heat dissipation pad portions 28 are formed of the insulating film 23. Each of the conductor patterns 25a, 25a, 25b, and 25b and the bonding metal layer 29 is formed at the same time, and is composed of a laminated film of a Ti film formed thereon and an Au film formed on the Ti film. Each external connection electrode 27a, 27a, 27b, 27b and each heat dissipating pad portion 28 are formed simultaneously. In this embodiment, the thickness of the Ti film on the insulating film 23 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Further, the material of each Au film is not limited to pure gold, and may be one added with impurities. Further, a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the insulating film 23, but the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used. Moreover, although Cu is adopted as the material of the through-hole wiring 24 and the thermal via 26, it is not limited to Cu, and for example, Ni may be adopted.

中間層基板30は、シリコン基板30aの一表面側(図1(b)における上面側)に、LED搭載用基板20の各組の導体パターン27b,27bと接合されて電気的に接続される2つ1組の導体パターン(図示せず)が4組形成されるとともに、LED搭載用基板20の接合用金属層29と接合される接合用金属層36が形成されている。また、中間層基板30は、シリコン基板30aの他表面側(図1(b)における下面側)に、貫通孔配線34,34を介して上記一表面側の2つ1組の導体パターンと電気的に接続される2つ1組の導体パターン37,37が4組形成されるとともに、光検出素子形成基板40と接合するための接合用金属層38が形成されている。   The intermediate layer substrate 30 is joined and electrically connected to one set of conductor patterns 27b and 27b of the LED mounting substrate 20 on one surface side (the upper surface side in FIG. 1B) of the silicon substrate 30a. Four sets of conductor patterns (not shown) are formed, and a bonding metal layer 36 to be bonded to the bonding metal layer 29 of the LED mounting substrate 20 is formed. Further, the intermediate layer substrate 30 is electrically connected to the other surface side of the silicon substrate 30a (the lower surface side in FIG. 1 (b)) via the through-hole wirings 34, 34, and a pair of conductor patterns on the one surface side. Four sets of two conductor patterns 37, 37 that are connected to each other are formed, and a bonding metal layer 38 for bonding to the light detection element forming substrate 40 is formed.

また、中間層基板30は、シリコン基板30aの厚み方向に貫通する複数の貫通孔32が貫設され、シリコン基板30aの上記一表面および上記他表面と各貫通孔32の内面とに跨って熱酸化膜(シリコン酸化膜)からなる絶縁膜33が形成されており、上記一表面側の各導体パターンおよび上記他表面側の各導体パターン37,37および各接合用金属層36,38がシリコン基板30aと電気的に絶縁されている。ここにおいて、上記一表面側の各導体パターンおよび上記他表面側の各導体パターン37,37および各接合用金属層36,38は、絶縁膜33上に形成されたTi膜と当該Ti膜上に形成されたAu膜との積層膜により構成されており、上記一表面側の各導体パターンと接合用金属層36とが同時に形成され、上記表面側の各導体パターン37,37と接合用金属層38とが同時に形成されている。なお、本実施形態では、絶縁膜33上のTi膜の膜厚を15〜50nm、Ti膜上のAu膜の膜厚を500nmに設定してあるが、これらの数値は一例であって特に限定するものではない。ここにおいて、各Au膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Au膜と絶縁膜33との間に密着性改善用の密着層としてTi膜を介在させてあるが、密着層の材料はTiに限らず、例えば、Cr、Nb、Zr、TiN、TaNなどでもよい。また、貫通孔配線34の材料としては、Cuを採用しているが、Cuに限らず、例えば、Niなどを採用してもよい。   Further, the intermediate layer substrate 30 has a plurality of through holes 32 penetrating in the thickness direction of the silicon substrate 30 a, and heats across the one surface and the other surface of the silicon substrate 30 a and the inner surface of each through hole 32. An insulating film 33 made of an oxide film (silicon oxide film) is formed, and each conductor pattern on the one surface side, each conductor pattern 37, 37 on the other surface side, and each bonding metal layer 36, 38 are formed on a silicon substrate. It is electrically insulated from 30a. Here, the conductor patterns on the one surface side, the conductor patterns 37 and 37 on the other surface side, and the bonding metal layers 36 and 38 are formed on the Ti film formed on the insulating film 33 and the Ti film, respectively. Each of the conductor patterns on one surface side and the bonding metal layer 36 are formed at the same time, and each of the conductor patterns 37, 37 on the surface side and the bonding metal layer are formed. 38 are formed simultaneously. In this embodiment, the thickness of the Ti film on the insulating film 33 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. Further, although a Ti film is interposed as an adhesion improving layer for adhesion between each Au film and the insulating film 33, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used. Moreover, although Cu is adopted as the material of the through-hole wiring 34, it is not limited to Cu, and for example, Ni may be adopted.

光検出素子形成基板40は、シリコン基板40aの一表面側(図1(b)における上面側)に、中間層基板30の各組の導体パターン37,37と接合されて電気的に接続される2つ1組の導体パターン47a,47b(図5参照)が4組形成されるとともに、中間層基板30の接合用金属層38と接合される接合用金属層48が形成されている。ここにおいて、各光検出素子4は、フォトダイオードにより構成されており、光検出素子形成基板40に形成された2つ1組の導体パターン47a,47bの一方の導体パターン47aは、光検出素子4を構成するフォトダイオードのp形領域4aに電気的に接続され、他方の導体パターン47bは、上記フォトダイオードのn形領域4bを構成するシリコン基板40aに電気的に接続されている。   The photodetecting element forming substrate 40 is joined and electrically connected to one set of conductor patterns 37 and 37 of the intermediate layer substrate 30 on one surface side (the upper surface side in FIG. 1B) of the silicon substrate 40a. Four pairs of conductor patterns 47a and 47b (see FIG. 5) are formed, and a bonding metal layer 48 bonded to the bonding metal layer 38 of the intermediate layer substrate 30 is formed. Here, each light detection element 4 is configured by a photodiode, and one conductor pattern 47a of the pair of conductor patterns 47a and 47b formed on the light detection element formation substrate 40 is the light detection element 4. Is electrically connected to the p-type region 4a of the photodiode, and the other conductor pattern 47b is electrically connected to the silicon substrate 40a constituting the n-type region 4b of the photodiode.

また、光検出素子形成基板40は、シリコン基板40aの上記一表面側にシリコン酸化膜からなる絶縁膜43が形成されており、当該絶縁膜43がフォトダイオードの反射防止膜を兼ねている。また、光検出素子形成基板40は、上記一方の導体パターン47aが、絶縁膜43に形成した第1のコンタクトホール(図示せず)を通してp形領域43aと電気的に接続され、上記他方の導体パターン47bが絶縁膜43に形成した第2のコンタクトホール(図示せず)を通してn形領域4bと電気的に接続されている。ここにおいて、各導体パターン47a,47bおよび接合用金属層48は、絶縁膜43上に形成されたTi膜と当該Ti膜上に形成されたAu膜との積層膜により構成されており、同時に形成してある。なお、本実施形態では、絶縁膜43上のTi膜の膜厚を15〜50nm、Ti膜上のAu膜の膜厚を500nmに設定してあるが、これらの数値は一例であって特に限定するものではない。ここにおいて、各Au膜の材料は、純金に限らず不純物を添加したものでもよい。また、各Au膜と絶縁膜43との間に密着性改善用の密着層としてTi膜を介在させてあるが、密着層の材料はTiに限らず、例えば、Cr、Nb、Zr、TiN、TaNなどでもよい。   Further, in the photodetecting element forming substrate 40, an insulating film 43 made of a silicon oxide film is formed on the one surface side of the silicon substrate 40a, and the insulating film 43 also serves as an antireflection film of the photodiode. In the photodetecting element forming substrate 40, the one conductor pattern 47a is electrically connected to the p-type region 43a through a first contact hole (not shown) formed in the insulating film 43, and the other conductor is formed. The pattern 47b is electrically connected to the n-type region 4b through a second contact hole (not shown) formed in the insulating film 43. Here, each of the conductor patterns 47a and 47b and the bonding metal layer 48 is composed of a laminated film of a Ti film formed on the insulating film 43 and an Au film formed on the Ti film, and is formed at the same time. It is. In this embodiment, the thickness of the Ti film on the insulating film 43 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are only examples and are particularly limited. Not what you want. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. Further, a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the insulating film 43, but the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr, TiN, TaN or the like may be used.

上述の実装基板2の形成にあたっては、各光検出素子4、絶縁膜43、各導体パターン47a,47b、および接合用金属層48が形成されたシリコン基板40aと中間層基板30とを低温での直接接合が可能な常温接合法などにより接合する第1の接合工程を行った後、シリコン基板40aを所望の厚みまで研磨する研磨工程を行い、その後、誘導結合プラズマ(ICP)型のドライエッチング装置などを用いてシリコン基板40aに光取出窓41を形成する光取出窓形成工程を行うことで光検出素子形成基板40を完成させてから、各LEDチップ1a〜1dが実装され各ボンディングワイヤ14の結線が行われたLED搭載用基板20と中間層基板30とを常温接合法などにより接合する第2の接合工程を行うようにすればよい。なお、常温接合法では、接合前に互いの接合表面へアルゴンのプラズマ若しくはイオンビーム若しくは原子ビームを真空中で照射して各接合表面の清浄化・活性化を行ってから、接合表面同士を接触させ、常温下で直接接合する。   In forming the mounting substrate 2 described above, the silicon substrate 40a and the intermediate layer substrate 30 on which the respective light detection elements 4, the insulating film 43, the respective conductor patterns 47a and 47b, and the bonding metal layer 48 are formed are formed at a low temperature. After performing a first bonding step for bonding by a room temperature bonding method or the like capable of direct bonding, a polishing step for polishing the silicon substrate 40a to a desired thickness is performed, and then an inductively coupled plasma (ICP) type dry etching apparatus The light detection element forming substrate 40 is completed by performing the light extraction window forming step of forming the light extraction window 41 on the silicon substrate 40a using the above, and then the LED chips 1a to 1d are mounted and the bonding wires 14 are connected. What is necessary is just to perform the 2nd joining process which joins the board | substrate 20 for LED mounting and the intermediate | middle layer board | substrate 30 which were connected by normal temperature joining method etc. FIG. In the normal temperature bonding method, the bonding surfaces are contacted with each other after the bonding surfaces are cleaned and activated by irradiating the bonding surfaces with argon plasma, ion beam or atomic beam in vacuum before bonding. And bond directly at room temperature.

上述の第1の接合工程では、シリコン基板40aの接合用金属層48と中間層基板30の接合用金属層38とが接合されるとともに、シリコン基板40aの導体パターン47a,47bと中間層基板30の導体パターン37,37とが接合され電気的に接続される。ここで、導体パターン47a,47bと導体パターン37,37との接合部位は、貫通孔配線34に重なる領域からずらしてあるので、導体パターン47a,47bと導体パターン37,37との互いの接合面の平坦度を高めることができ、接合歩留まりを高めることができるとともに接合信頼性を高めることができる。また、第2の接合工程では、LED搭載用基板20の接合用金属層29と中間層基板30の接合用金属層36とが接合されるとともに、LED搭載用基板20の導体パターン25b,25bと中間層基板30の導体パターン35,35とが接合され電気的に接続される。ここで、導体パターン25b,25bと導体パターン35,35との接合部位は、貫通孔配線24に重なる領域および貫通孔配線34に重なる領域からずらしてあるので、導体パターン25b,25bと導体パターン35,35との互いの接合面の平坦度を高めることができ、接合歩留まりを高めることができるとともに接合信頼性を高めることができる。   In the first bonding step, the bonding metal layer 48 of the silicon substrate 40a and the bonding metal layer 38 of the intermediate layer substrate 30 are bonded, and the conductor patterns 47a and 47b of the silicon substrate 40a and the intermediate layer substrate 30 are bonded. The conductor patterns 37 and 37 are joined and electrically connected. Here, since the joint portions of the conductor patterns 47a and 47b and the conductor patterns 37 and 37 are shifted from the region overlapping the through-hole wiring 34, the joint surfaces of the conductor patterns 47a and 47b and the conductor patterns 37 and 37 are mutually connected. The flatness of the substrate can be increased, the junction yield can be increased, and the junction reliability can be increased. In the second bonding step, the bonding metal layer 29 of the LED mounting substrate 20 and the bonding metal layer 36 of the intermediate layer substrate 30 are bonded, and the conductor patterns 25b and 25b of the LED mounting substrate 20 The conductor patterns 35 and 35 of the intermediate layer substrate 30 are joined and electrically connected. Here, since the joint portions of the conductor patterns 25b and 25b and the conductor patterns 35 and 35 are shifted from the region overlapping the through-hole wiring 24 and the region overlapping the through-hole wiring 34, the conductor patterns 25b and 25b and the conductor pattern 35 are arranged. , 35, the flatness of the mutual joint surfaces can be increased, the joint yield can be increased, and the joint reliability can be enhanced.

また、上述の透光性部材3は、透光性材料(例えば、シリコーン、アクリル樹脂、ガラスなど)からなる透光性基板を用いて形成してある。ここで、透光性部材3は、実装基板2と同じ外周形状の矩形板状に形成されており、実装基板2側とは反対の光取り出し面に、LEDチップ1a〜1dから放射された光の全反射を抑制する微細凹凸構造が形成されている。ここにおいて、透光性部材3の光取り出し面に形成する微細凹凸構造は、多数の微細な凹部が2次元周期構造を有するように形成されている。なお、上述の微細凹凸構造は、例えば、レーザ加工技術やエッチング技術やインプリントリソグラフィ技術などを利用して形成すればよい。   Moreover, the above-mentioned translucent member 3 is formed using the translucent board | substrate which consists of translucent materials (for example, silicone, an acrylic resin, glass, etc.). Here, the translucent member 3 is formed in a rectangular plate shape having the same outer peripheral shape as the mounting substrate 2, and light emitted from the LED chips 1 a to 1 d on the light extraction surface opposite to the mounting substrate 2 side. A fine concavo-convex structure that suppresses total reflection is formed. Here, the fine concavo-convex structure formed on the light extraction surface of the translucent member 3 is formed such that many fine concave portions have a two-dimensional periodic structure. The fine concavo-convex structure described above may be formed using, for example, a laser processing technique, an etching technique, an imprint lithography technique, or the like.

上述の発光装置Aの製造にあたっては、上述の各シリコン基板20a,30a,40aとして、それぞれLED搭載用基板20、中間層基板30、光検出素子形成基板40を多数形成可能なシリコンウェハを用いるとともに、上述の透光性基板として透光性部材3を多数形成可能なウェハ状のもの(透光性ウェハ)を用い、上述の第1の接合工程、研磨工程、第2の接合工程、光取出窓形成工程、第2の接合工程、実装基板2の収納凹所2aに封止樹脂を充填して封止部5を形成する封止部形成工程、封止部形成工程の後で実装基板2と透光性部材3とを接合する第3の接合工程などの各工程をウェハレベルで行うことでウェハレベルパッケージ構造体を形成してから、ダイシング工程により実装基板2のサイズに分割されている。したがって、LED搭載用基板20と中間層基板30と光検出素子形成基板40と透光性部材3とが同じ外形サイズとなり、小型のパッケージBを実現できるとともに、製造が容易になる。また、中間層基板30におけるミラー2dと光検出素子形成基板40における光検出素子4との相対的な位置精度を高めることができ、LEDチップ1a〜1dから側方へ放射された光がミラー2dにより反射されて各LEDチップ1a〜1dに対応する光検出素子4へ導かれる。   In manufacturing the light emitting device A described above, a silicon wafer capable of forming a large number of the LED mounting substrate 20, the intermediate layer substrate 30, and the light detection element forming substrate 40 is used as each of the silicon substrates 20a, 30a, and 40a. A wafer-like member (translucent wafer) on which a large number of translucent members 3 can be formed as the above-described translucent substrate, the above-described first bonding step, polishing step, second bonding step, light extraction The mounting substrate 2 after the window forming step, the second bonding step, the sealing portion forming step of forming the sealing portion 5 by filling the housing recess 2a of the mounting substrate 2 with the sealing resin, and the sealing portion forming step. The wafer level package structure is formed by performing each process such as a third bonding process for bonding the light transmitting member 3 and the translucent member 3 at the wafer level, and then divided into the size of the mounting substrate 2 by the dicing process. . Therefore, the LED mounting substrate 20, the intermediate layer substrate 30, the light detection element formation substrate 40, and the translucent member 3 have the same outer size, so that a small package B can be realized and manufacture is facilitated. In addition, the relative positional accuracy between the mirror 2d in the intermediate layer substrate 30 and the light detecting element 4 in the light detecting element forming substrate 40 can be improved, and the light emitted from the LED chips 1a to 1d to the side is mirror 2d. And is guided to the light detection elements 4 corresponding to the LED chips 1a to 1d.

ところで、発光装置Aは、上述のように、光検出素子形成基板40に各発光色のLEDチップ1a〜1dから放射された光を各別に検出する4つの光検出素子4が設けられており、4つの光検出素子4と互いに発光色の異なる4つのLEDチップ1a〜1dとを1対1で対応させるために、ベース基板部であるLED搭載用基板20と壁部2bとで囲まれた内部空間(つまり、実装基板2における収納凹所2aの内部空間)を各発光色のLEDチップ1a〜1dそれぞれの収納空間に区画し各LEDチップ1a〜1dそれぞれから放射された光が2つ以上の光検出素子4の受光面へ入射するのを阻止する十字状の遮光部39が、中間層基板30に連続一体に形成されている。すなわち、本実施形態における発光装置Aでは、中間層基板30の開口窓31が遮光部39によって4つの小空間31aに区画されており、各LEDチップ1a〜1dそれぞれから放射される光の放射範囲が遮光部39により制限される。ここにおいて、本実施形態では、中間層基板30における遮光部39がアルカリ系溶液を用いた異方性エッチングにより開口窓31と同時に形成されており、遮光部39の各側面が開口窓31の内側面と同様に(111)面となっているので、遮光部39の各側面がLEDチップ1a〜1dから放射された光を前方へ反射するミラーとして機能する。なお、本実施形態の発光装置Aでは、LED搭載用基板20からの遮光部39の突出高さが壁部2bの突出高さよりも低くなっており、遮光部39の先端面と透光性部材3とが離間しているので、遮光部39に起因して暗部が生じるのを防止することができる。   By the way, as described above, the light emitting device A is provided with the four light detecting elements 4 that individually detect the light emitted from the LED chips 1a to 1d of the respective emission colors on the light detecting element forming substrate 40. The interior surrounded by the LED mounting substrate 20 that is the base substrate portion and the wall portion 2b in order to correspond one-to-one with the four light detection elements 4 and the four LED chips 1a to 1d having different emission colors. A space (that is, an internal space of the housing recess 2a in the mounting substrate 2) is partitioned into housing spaces for the LED chips 1a to 1d of the respective emission colors, and two or more lights emitted from the LED chips 1a to 1d are emitted. A cross-shaped light-shielding portion 39 that prevents entry to the light-receiving surface of the light-detecting element 4 is formed continuously and integrally on the intermediate layer substrate 30. That is, in the light emitting device A according to the present embodiment, the opening window 31 of the intermediate layer substrate 30 is partitioned into four small spaces 31a by the light shielding portion 39, and the emission range of light emitted from each of the LED chips 1a to 1d. Is limited by the light shielding unit 39. Here, in this embodiment, the light shielding part 39 in the intermediate layer substrate 30 is formed simultaneously with the opening window 31 by anisotropic etching using an alkaline solution, and each side surface of the light shielding part 39 is within the opening window 31. Since it is a (111) surface like the side surface, each side surface of the light shielding portion 39 functions as a mirror that reflects light emitted from the LED chips 1a to 1d forward. In the light emitting device A of the present embodiment, the protruding height of the light shielding portion 39 from the LED mounting substrate 20 is lower than the protruding height of the wall portion 2b, and the front end surface of the light shielding portion 39 and the translucent member As a result, the dark portion due to the light shielding portion 39 can be prevented.

以上説明した本実施形態のLED照明器具では、LEDチップ1を収納したパッケージBに当該パッケージB内のLEDチップ1から放射される光を検出する光検出素子4が設けられ器具本体110に保持された複数の発光装置Aと、光検出素子4の出力に基づいて当該光検出素子4が設けられているパッケージB内のLEDチップ1の光出力を制御する制御部160とを備えているので、発光装置Aとは別途に光ファイバのような導光部材を器具本体110内に設ける必要がなく、発光装置Aの配置設計によらずLEDチップ1から放射される光を当該LEDチップ1が収納されたパッケージBに設けられた光検出素子4により安定して精度良く検出することができ、器具全体として得られる混色光の光色や色温度の精度を向上することができる。   In the LED lighting apparatus of the present embodiment described above, the light detection element 4 that detects light emitted from the LED chip 1 in the package B is provided in the package B in which the LED chip 1 is stored, and is held by the apparatus main body 110. A plurality of light emitting devices A and a control unit 160 that controls the light output of the LED chip 1 in the package B in which the light detection element 4 is provided based on the output of the light detection element 4. There is no need to provide a light guide member such as an optical fiber in the instrument main body 110 separately from the light emitting device A, and the LED chip 1 stores light emitted from the LED chip 1 regardless of the layout design of the light emitting device A. Can be detected stably and accurately by the light detecting element 4 provided in the package B, and the accuracy of the light color and color temperature of the mixed color light obtained as a whole instrument can be improved. Kill.

ここにおいて、本実施形態のLED照明器具では発光装置Aごとに、発光色の異なる複数種のLEDチップ1a〜1dが1つのパッケージB内に収納されるとともに、各発光色のLEDチップ1a〜1dから放射される光を各別に検出する複数の光検出素子4がパッケージBに設けられているので、各発光装置Aそれぞれにおいて発光色の異なる複数種のLEDチップ1a〜1dから放射される光を各別に検出でき、各発光装置Aごとに混色光の光色および色温度を制御することができるから、発光装置Aの配置設計の自由度が高くなる。   Here, in the LED lighting apparatus of this embodiment, for each light emitting device A, a plurality of types of LED chips 1a to 1d having different emission colors are housed in one package B, and the LED chips 1a to 1d for each emission color are stored. Since a plurality of light detecting elements 4 for detecting light emitted from each of the light emitting devices A are provided in the package B, light emitted from a plurality of types of LED chips 1a to 1d having different emission colors in each light emitting device A is provided. Since it can be detected separately and the light color and color temperature of the mixed color light can be controlled for each light emitting device A, the degree of freedom in the layout design of the light emitting device A is increased.

(実施形態2)
本実施形態のLED照明器具の基本構成は実施形態1と同じであり、実施形態1では発光装置Aが発光色の異なる複数種のLEDチップ1a〜1dを備えていたのに対して、図10に示すように、発光装置Aが1つのLEDチップ1のみを備えており、LEDチップ1として赤色LEDチップを採用した発光装置A(Aa)と、LEDチップ1として緑色LEDチップを採用した発光装置A(Ab)と、LEDチップ1として青色LEDチップを採用した発光装置A(Ac)との組が回路基板130上に所定数だけ実装されるとともに、当該回路基板130に各発光装置AのLEDチップ1を駆動する駆動回路部(図示せず)と、各光検出素子4の出力に基づいて駆動回路部から各発光色のLEDチップ1に流れる電流をフィードバック制御する制御部160とが設けられている点などが相違する。なお、本実施形態のLED照明器具では、回路基板130における各発光装置Aが実装されている一表面側に、発光装置Aa,Ab,Acの組ごとに発光装置Aa,Ab,Acを覆う透光性材料(例えば、シリコーン、アクリル樹脂など)からなるレンズ部(図示せず)を設けるとともに、当該レンズ部に、上記透光性材料とは屈折率の異なる材料(例えば、ガラスなど)からなる多数の小球状の光拡散材を添加しておくことにより、器具本体110の薄型化を図りながらも所望の混色光が得られるようにしてあるが、レンズ部に光各散材を添加しなくてもレンズ部の形状を適宜設計することで所望の混色光が得られるようにしてもよい。なお、その他の構成は実施形態1と同じなので図示および説明を省略する。また、組をなす複数の発光装置Aa,Ab,Acそれぞれの発光色の組み合わせは、所望の混色光に応じて適宜選択すればよく、組をなす発光装置Aの数も3つに限定するものではなく、複数であればよい。
(Embodiment 2)
The basic configuration of the LED lighting apparatus of the present embodiment is the same as that of the first embodiment. In the first embodiment, the light emitting device A includes a plurality of types of LED chips 1a to 1d having different emission colors, whereas FIG. As shown in FIG. 4, the light emitting device A includes only one LED chip 1, the light emitting device A (Aa) adopting a red LED chip as the LED chip 1, and the light emitting device adopting a green LED chip as the LED chip 1. A predetermined number of sets of A (Ab) and a light emitting device A (Ac) adopting a blue LED chip as the LED chip 1 are mounted on the circuit board 130, and the LED of each light emitting device A is mounted on the circuit board 130. A drive circuit unit (not shown) for driving the chip 1 and feedback control of the current flowing from the drive circuit unit to the LED chip 1 of each emission color based on the output of each light detection element 4 Such that the controller 160 is provided that is different. In addition, in the LED lighting fixture of this embodiment, the light-emitting devices Aa, Ab, and Ac are covered for each set of the light-emitting devices Aa, Ab, and Ac on one surface side of the circuit board 130 where the light-emitting devices A are mounted. A lens portion (not shown) made of a light material (eg, silicone, acrylic resin, etc.) is provided, and the lens portion is made of a material (eg, glass) having a refractive index different from that of the light transmissive material. By adding a large number of small spherical light diffusing materials, it is possible to obtain a desired mixed color light while reducing the thickness of the instrument body 110, but without adding each light scattering material to the lens portion. However, a desired color mixture light may be obtained by appropriately designing the shape of the lens portion. Since other configurations are the same as those of the first embodiment, illustration and description thereof are omitted. Further, the combination of the light emission colors of each of the plurality of light emitting devices Aa, Ab, and Ac may be appropriately selected according to the desired mixed color light, and the number of light emitting devices A forming the group is also limited to three. Instead, it may be a plurality.

以下、本実施形態における発光装置Aについて図10〜図18に基づいて説明するが、実施形態1における発光装置Aと同様の構成要素には同一の符号を付して説明を適宜省略する。   Hereinafter, the light emitting device A according to the present embodiment will be described with reference to FIGS. 10 to 18. However, the same components as those of the light emitting device A according to the first embodiment are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

本実施形態における発光装置Aの基本構成は実施形態1と略同じであって、可視光(例えば、赤色光、緑色光、青色光など)を放射するLEDチップ1と、LEDチップ1を収納する収納凹所2aが一表面に形成され収納凹所2aの内底面にLEDチップ1が実装された実装基板2と、実装基板2の上記一表面側において収納凹所2aを閉塞する形で実装基板2に固着された透光性部材3と、実装基板2に設けられLEDチップ1から放射された光を検出する光検出素子4と、実装基板2の収納凹所2aに充填された透光性の封止樹脂からなりLEDチップ1および当該LEDチップ1に接続されたボンディングワイヤ14(図11参照)を封止した封止部5と備えている。   The basic configuration of the light emitting device A in the present embodiment is substantially the same as that of the first embodiment, and the LED chip 1 that emits visible light (for example, red light, green light, blue light, etc.) and the LED chip 1 are accommodated. A mounting substrate 2 in which a housing recess 2a is formed on one surface and the LED chip 1 is mounted on the inner bottom surface of the housing recess 2a, and the mounting substrate 2 is closed on the one surface side of the mounting substrate 2 2, a translucent member 3 fixed to 2, a light detection element 4 provided on the mounting substrate 2 for detecting light emitted from the LED chip 1, and a translucency filled in the housing recess 2 a of the mounting substrate 2. And a sealing portion 5 that seals the LED chip 1 and the bonding wire 14 (see FIG. 11) connected to the LED chip 1.

実装基板2は、図10〜図12に示すように、LEDチップ1が一表面側に搭載される矩形板状のLED搭載用基板20と、LED搭載用基板20の上記一表面側に対向配置され円形状の光取出窓41が形成されるとともに光検出素子4が形成された光検出素子形成基板40と、LED搭載用基板20と光検出素子形成基板40との間に介在し光取出窓41に連通する矩形状の開口窓31が形成された中間層基板30とで構成されており、LED搭載用基板20と中間層基板30と光検出素子形成基板40とで囲まれた空間が上記収納凹所2aを構成している。   As shown in FIGS. 10 to 12, the mounting substrate 2 is disposed so as to be opposed to the rectangular plate-shaped LED mounting substrate 20 on which the LED chip 1 is mounted on one surface side and the one surface side of the LED mounting substrate 20. The circular light extraction window 41 and the light detection element forming substrate 40 on which the light detection element 4 is formed, and the light extraction window interposed between the LED mounting substrate 20 and the light detection element formation substrate 40. The space surrounded by the LED mounting substrate 20, the intermediate layer substrate 30, and the photodetecting element forming substrate 40 is configured by the intermediate layer substrate 30 in which the rectangular opening window 31 communicating with the terminal 41 is formed. The storage recess 2a is configured.

LED搭載用基板20は、図13および図14に示すように、シリコン基板20aの一表面側(図13(c)における左面側)に、LEDチップ1の両電極それぞれと電気的に接続される2つの導体パターン25a,25aが形成されるとともに、中間層基板30に形成された2つの貫通孔配線34,34を介して光検出素子4と電気的に接続される2つの導体パターン25b,25bが形成されており、各導体パターン25a,25a,25b,25bとシリコン基板20aの他表面側(図13(c)における右面側)に形成された4つの外部接続用電極27a,27a,27b,27bとがそれぞれ貫通孔配線24を介して電気的に接続されている。また、LED搭載用基板20は、シリコン基板20aの上記一表面側に、中間層基板30と接合するための接合用金属層29も形成されている。   As shown in FIGS. 13 and 14, the LED mounting substrate 20 is electrically connected to each of both electrodes of the LED chip 1 on one surface side (left surface side in FIG. 13C) of the silicon substrate 20 a. Two conductor patterns 25a and 25b are formed, and two conductor patterns 25b and 25b are electrically connected to the light detection element 4 through two through-hole wirings 34 and 34 formed in the intermediate layer substrate 30. The four external connection electrodes 27a, 27a, 27b, formed on the other surface side of the conductor patterns 25a, 25a, 25b, 25b and the silicon substrate 20a (the right side in FIG. 13C), 27b are electrically connected to each other through the through-hole wiring 24. The LED mounting substrate 20 is also formed with a bonding metal layer 29 for bonding to the intermediate layer substrate 30 on the one surface side of the silicon substrate 20a.

中間層基板30は、図15および図16に示すように、シリコン基板30aの一表面側(図15(c)における右面側)に、LED搭載用基板20の2つの導体パターン27b,27bと接合されて電気的に接続される2つの導体パターン35,35が形成されるとともに、LED搭載用基板20の接合用金属層29と接合される接合用金属層36が形成されている。また、中間層基板30は、シリコン基板30aの他表面側(図15(c)における左面側)に、貫通孔配線34,34を介して導体パターン35,35と電気的に接続される導体パターン37,37が形成されるとともに、光検出素子形成基板40と接合するための接合用金属層38が形成されている。   As shown in FIGS. 15 and 16, the intermediate layer substrate 30 is bonded to the two conductor patterns 27b and 27b of the LED mounting substrate 20 on one surface side of the silicon substrate 30a (the right side in FIG. 15C). Thus, two conductive patterns 35 and 35 that are electrically connected are formed, and a bonding metal layer 36 that is bonded to the bonding metal layer 29 of the LED mounting substrate 20 is formed. In addition, the intermediate layer substrate 30 is a conductor pattern electrically connected to the conductor patterns 35 and 35 via the through-hole wirings 34 and 34 on the other surface side of the silicon substrate 30a (the left side in FIG. 15C). 37 and 37 are formed, and a bonding metal layer 38 for bonding to the light detection element forming substrate 40 is formed.

光検出素子形成基板40は、図17および図18に示すように、シリコン基板40aの一表面側(図17(c)における右面側)に、中間層基板30の2つの導体パターン37,37と接合されて電気的に接続される2つの導体パターン47a,47bが形成されるとともに、中間層基板30の接合用金属層38と接合される接合用金属層48が形成されている。なお、光検出素子形成基板40は、上記一方の導体パターン47aが、絶縁膜43に形成したコンタクトホール43aを通して光検出素子4を構成するフォトダイオードのp形領域43aと電気的に接続され、上記他方の導体パターン47bが絶縁膜43に形成したコンタクトホール43bを通して上記フォトダイオードのn形領域4bと電気的に接続されている。   As shown in FIGS. 17 and 18, the photodetecting element forming substrate 40 has two conductor patterns 37 and 37 on the intermediate layer substrate 30 on one surface side (right side in FIG. 17C) of the silicon substrate 40a. Two conductor patterns 47 a and 47 b that are bonded and electrically connected are formed, and a bonding metal layer 48 that is bonded to the bonding metal layer 38 of the intermediate layer substrate 30 is formed. In the photodetecting element forming substrate 40, the one conductor pattern 47a is electrically connected to the p-type region 43a of the photodiode constituting the photodetecting element 4 through the contact hole 43a formed in the insulating film 43. The other conductor pattern 47 b is electrically connected to the n-type region 4 b of the photodiode through a contact hole 43 b formed in the insulating film 43.

以上説明した本実施形態のLED照明器具は、実施形態1と同様、LEDチップ1を収納したパッケージBに当該パッケージB内のLEDチップ1から放射される光を検出する光検出素子4が設けられ器具本体110に保持された複数の発光装置Aと、光検出素子4の出力に基づいて当該光検出素子4が設けられているパッケージB内のLEDチップ1の光出力を制御する制御部160とを備えているので、発光装置Aとは別途に光ファイバのような導光部材を器具本体110内に設ける必要がなく、発光装置Aの配置設計によらずLEDチップ1から放射される光を当該LEDチップ1が収納されたパッケージBに設けられた光検出素子4により安定して精度良く検出することができ、器具全体として得られる混色光の光色や色温度の精度を向上することができる。   As described in the first embodiment, the LED lighting fixture of the present embodiment described above is provided with the light detection element 4 that detects light emitted from the LED chip 1 in the package B in the package B that houses the LED chip 1. A plurality of light emitting devices A held by the instrument body 110, and a control unit 160 for controlling the light output of the LED chip 1 in the package B in which the light detection element 4 is provided based on the output of the light detection element 4. Therefore, it is not necessary to provide a light guide member such as an optical fiber in the instrument main body 110 separately from the light emitting device A, and the light emitted from the LED chip 1 can be emitted regardless of the layout design of the light emitting device A. The light detection element 4 provided in the package B in which the LED chip 1 is housed can be stably and accurately detected, and the accuracy of the light color and color temperature of the mixed color light obtained as the entire instrument. It can be improved.

なお、本実施形態では、実装基板2の収納凹所2aの内底面に1つのLEDチップ1を実装してあるが、LEDチップ1の数は特に限定するものではなく、発光色が同じ複数のLEDチップ1を収納凹所2aの内底面に実装するようにしてもよい。また、本実施形態では、回路基板130の上記一表面側に上記レンズ部を設けてあるが、上記レンズ部は回路基板130ではなく透光性カバー140に一体に設けてもよいし、組をなす複数の発光装置Aをより近接して配置することで上記レンズ部をなくしてもよいし、発光装置Aの透光性部材30をレンズ状の形状とすることで上記レンズ部をなくしてもよい。   In the present embodiment, one LED chip 1 is mounted on the inner bottom surface of the housing recess 2a of the mounting substrate 2. However, the number of LED chips 1 is not particularly limited, and a plurality of light emission colors are the same. The LED chip 1 may be mounted on the inner bottom surface of the storage recess 2a. In the present embodiment, the lens portion is provided on the one surface side of the circuit board 130. However, the lens portion may be provided integrally with the light-transmitting cover 140 instead of the circuit board 130, or a set. The lens portion may be eliminated by arranging a plurality of light emitting devices A closer to each other, or the lens portion may be eliminated by forming the translucent member 30 of the light emitting device A into a lens shape. Good.

ところで、上記各実施形態では、制御部160を発光装置Aとは別に設けてあるが、制御部160を各発光装置AそれぞれのパッケージBに集積化して設けるようにすれば、各発光装置Aとは別に制御部160を設ける必要がないので、回路基板130などへの各発光装置Aの配置設計が容易になる。   By the way, in each said embodiment, although the control part 160 is provided separately from the light-emitting device A, if the control part 160 is integrated and provided in the package B of each light-emitting device A, each light-emitting device A and In addition, since it is not necessary to provide the controller 160 separately, the layout design of each light emitting device A on the circuit board 130 or the like is facilitated.

実施形態1を示し、(a)は一部破断した概略正面図、(b)は発光装置の概略断面図である。Embodiment 1 is shown, (a) is a schematic front view partly broken, and (b) is a schematic sectional view of a light emitting device. 同上を示す概略下面図である。It is a schematic bottom view which shows the same as the above. 同上における発光装置の概略分解斜視図である。It is a general | schematic disassembled perspective view of the light-emitting device same as the above. 同上における発光装置の要部概略平面図である。It is a principal part schematic plan view of the light-emitting device same as the above. 同上における光検出素子形成基板の概略下面図である。It is a schematic bottom view of the optical detection element formation board | substrate in the same as the above. 同上における器具本体の概略斜視図である。It is a schematic perspective view of the instrument main body in the same as the above. 同上における透光性カバーを示し、(a)は平面図、(b)は断面図である。The translucent cover in the same as above is shown, (a) is a plan view and (b) is a sectional view. 同上における化粧カバーを示し、(a)は平面図、(b)は(a)のX−X’断面図である。The decorative cover in the above is shown, (a) is a plan view, (b) is a cross-sectional view taken along line X-X 'of (a). 同上における化粧カバーの斜視図である。It is a perspective view of the decorative cover in the same as the above. 実施形態2を示し、(a)は要部概略斜視図、(b)は発光装置の概略断面図である。Embodiment 2 is shown, (a) is a principal part schematic perspective view, (b) is a schematic sectional drawing of a light-emitting device. 同上における発光装置の概略分解斜視図である。It is a general | schematic disassembled perspective view of the light-emitting device same as the above. 同上における発光装置の実装基板を示し、(a)は概略平面図、(b)は(a)のX−X’概略断面図、(c)は(a)のY−Y’概略断面図である。The mounting board of the light-emitting device in the same as above is shown, (a) is a schematic plan view, (b) is an XX ′ schematic cross-sectional view of (a), and (c) is a YY ′ schematic cross-sectional view of (a). is there. 同上における発光装置のLED搭載用基板を示し、(a)は概略平面図、(b)は(a)のX−X’概略断面図、(c)は(a)のY−Y’概略断面図である。The LED mounting board | substrate of the light-emitting device in the same as the above is shown, (a) is a schematic plan view, (b) is an XX 'schematic cross-sectional view of (a), and (c) is a YY' schematic cross-sectional view of (a). FIG. 同上における発光装置のLED搭載用基板の概略下面図である。It is a schematic bottom view of the board | substrate for LED mounting of the light-emitting device in the same as the above. 同上における発光装置の中間層基板を示し、(a)は概略平面図、(b)は(a)のX−X’概略断面図、(c)は(a)のY−Y’概略断面図である。The intermediate | middle layer board | substrate of the light-emitting device in the same as the above is shown, (a) is a schematic plan view, (b) is an XX 'schematic cross-sectional view of (a), (c) is a YY' schematic cross-sectional view of (a). It is. 同上における発光装置の中間層基板の概略下面図である。It is a schematic bottom view of the intermediate | middle layer board | substrate of the light-emitting device in the same as the above. 同上における発光装置の光検出素子形成基板を示し、(a)は概略平面図、(b)は(a)のX−X’概略断面図、(c)は(a)のY−Y’概略断面図である。The light detection element formation board | substrate of the light-emitting device same as the above is shown, (a) is a schematic plan view, (b) is XX 'schematic sectional drawing of (a), (c) is YY' schematic of (a). It is sectional drawing. 同上における発光装置の光検出素子形成基板の概略下面図である。It is a schematic bottom view of the light detection element formation board | substrate of the light-emitting device same as the above.

符号の説明Explanation of symbols

A 発光装置
B パッケージ
1 LEDチップ
4 光検出素子
110 器具本体
130 回路基板
160 制御部
A Light-emitting device B Package 1 LED chip 4 Photodetecting element 110 Instrument body 130 Circuit board 160 Control unit

Claims (3)

発光色の異なる複数種のLEDチップを用いて所望の混色光を得るようにしたLED照明器具であって、器具本体と、LEDチップを収納したパッケージに当該パッケージ内のLEDチップから放射される光を検出する光検出素子が設けられ器具本体に保持された複数の発光装置と、光検出素子の出力に基づいて当該光検出素子が設けられているパッケージ内のLEDチップの光出力を制御する制御部とを備えてなることを特徴とするLED照明器具。   An LED lighting apparatus that uses a plurality of types of LED chips having different emission colors to obtain desired mixed color light, and the light emitted from the LED chips in the apparatus main body and a package containing the LED chips. A plurality of light emitting devices that are provided with a light detection element for detecting light and are held by the instrument body, and a control for controlling the light output of the LED chip in the package in which the light detection element is provided based on the output of the light detection element The LED lighting fixture characterized by comprising a part. 発光装置は、発光色の異なる複数種のLEDチップがパッケージ内に収納されるとともに、各発光色のLEDチップから放射される光を各別に検出する複数の光検出素子がパッケージに設けられてなることを特徴とする請求項1記載のLED照明器具。   In the light emitting device, a plurality of types of LED chips having different emission colors are housed in a package, and a plurality of light detection elements for detecting light emitted from the LED chips of each emission color are provided in the package. The LED lighting apparatus according to claim 1. 制御部は、各発光装置それぞれのパッケージに設けられてなることを特徴とする請求項1または請求項2記載のLED照明器具。
The LED lighting apparatus according to claim 1, wherein the control unit is provided in a package of each light emitting device.
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