JP2008026600A - Material for forming resist underlay film, and pattern forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a material for forming a resist underlay film for a multilayer resist process, functioning as an excellent antireflection film particularly against exposure light at a short wavelength, and having high transparency and an optimum n value and k value and excellent etching durability. <P>SOLUTION: The material for forming the resist underlay film comprises a polymer having a repeating unit expressed by formula (1). In formula (1), R<SP>1</SP>to R<SP>4</SP>are identical or different species, representing hydrogen atoms, 1-20C straight-chain, branched or cyclic alkyl groups, -R<SP>5</SP>-(COOR<SP>6</SP>)<SB>p</SB>, or the like; R<SP>5</SP>represents a single bond or a 1-20C straight-chain, branched or cyclic hydrocarbon group with a valence of (p+1) which may have an ester group, an ether group or a hydroxyl group; p is an integer of 1 to 3, and when R5 is a single bond, p is 1; R<SP>6</SP>represents a hydrogen atom, a 1-20C straight-chain, branched or cyclic alkyl group which may have a carbonyl group or an ether group; X represents a methylene group, an oxygen atom or a sulfur atom; n and m are positive numbers of 0 to 5; and (a-1) and (a-2) satisfy 0≤(a-1)≤1.0, 0≤(a-2)≤1.0 and 0<(a-1)+(a-2)≤1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a resist underlayer film forming material that is effective as an antireflection film material used for microfabrication in a manufacturing process of a semiconductor element or the like, and in particular, far ultraviolet light, KrF excimer laser light (248 nm), ArF excimer laser light (193 nm). Multilayer resist suitable for exposure with F ₂ laser light (157 nm), Kr ₂ laser light (146 nm), Ar ₂ laser light (126 nm), soft X-ray (EUV, 13.5 nm), electron beam (EB), etc. The present invention relates to a material for forming a resist underlayer film. Furthermore, the present invention relates to a method for forming a pattern on a substrate by lithography using the same.

  In recent years, with the increasing integration and speed of LSIs, there is a need for finer pattern rules. In lithography using light exposure, which is currently used as a general-purpose technology, the essence derived from the wavelength of the light source The resolution limit is approaching.

  As a light source for lithography used in forming a resist pattern, light exposure using a mercury lamp g-line (436 nm) or i-line (365 nm) as a light source is widely used, and as a means for further miniaturization, A method of shortening the wavelength of exposure light has been considered effective. For this reason, a short wavelength KrF excimer laser (248 nm) was used as an exposure light source in place of the i-line (365 nm) in the mass production process of the 64-Mbit DRAM processing method. However, in order to manufacture a DRAM having a degree of integration of 1G or more, which requires a finer processing technique (processing dimension is 0.13 μm or less), a light source with a shorter wavelength is required, and in particular, an ArF excimer laser (193 nm) is used. Lithography has been studied.

  On the other hand, conventionally, it is known that a two-layer resist method is excellent for forming a pattern with a high aspect ratio on a stepped substrate, and further, a two-layer resist film is developed with a general alkaline developer. Requires a high molecular silicone compound having a hydrophilic group such as a hydroxy group or a carboxyl group.

As the silicone-based chemically amplified positive resist material, a base resin in which a part of the phenolic hydroxyl group of polyhydroxybenzylsilsesquioxane, which is a stable alkali-soluble silicone polymer, is protected with a t-Boc group is used. And a silicon-based chemically amplified positive resist material for a KrF excimer laser in which an acid generator is combined have been proposed (Patent Document 1: JP-A-6-118651, Non-Patent Document 1: SPIE vol. 1925 (1993) p377. Etc.). For ArF excimer lasers, a positive resist material based on silsesquioxane in which cyclohexyl carboxylic acid is substituted with an acid labile group has been proposed (Patent Documents 2 and 3: Japanese Patent Laid-Open No. Hei 10-2010). 324748, JP-A-11-302382, Non-Patent Document 2: SPIE vol. 3333 (1998) p62). Further, for F ₂ lasers, a positive resist material based on silsesquioxane having hexafluoroisopropanol as a soluble group has been proposed (Patent Document 4: JP 2002-55456 A). The polymer contains a polysilsesquioxane having a ladder skeleton formed by condensation polymerization of trialkoxysilane or trihalogenated silane in the main chain.

  Silicon-containing (meth) acrylic ester-based polymers have been proposed as resist base polymers in which silicon is pendant to the side chain (Patent Document 5: Japanese Patent Laid-Open No. 9-110938, Non-Patent Document 3: J. Photopolymer). Sci. And Technol., Vol.9 No. 3 (1996) p435-446).

  The lower layer film of the two-layer resist method is a hydrocarbon compound that can be etched with oxygen gas, and further serves as a mask when etching the underlying substrate, and therefore needs to have high etching resistance. In oxygen gas etching, it is necessary to be composed only of hydrocarbons that do not contain silicon atoms. In addition, in order to improve the line width controllability of the upper silicon-containing resist film and reduce the pattern sidewall irregularities and pattern collapse due to standing waves, it also has a function as an antireflection film, specifically It is necessary to suppress the reflectance from the lower layer film into the resist film to 1% or less.

  Here, the results of calculating the reflectance up to a maximum film thickness of 500 nm are shown in FIGS. Assuming that the exposure wavelength is 193 nm, the n value of the upper resist film is 1.74, and the k value is 0.02, the k value of the lower film is fixed at 0.3 in FIG. The substrate reflectivity when the thickness is varied in the range of 0 to 2.0 and the film thickness is 0 to 500 nm is shown on the horizontal axis. When assuming a lower layer film for a two-layer resist having a film thickness of 300 nm or more, the reflectance is reduced to 1% or less in a range of 1.6 to 1.9, which is the same as or slightly higher than the upper layer resist film. There is an optimal value that can be achieved.

  FIG. 2 shows the reflectance when the n value of the lower layer film is fixed to 1.5 and the k value is varied in the range of 0.1 to 0.8. The reflectance can be reduced to 1% or less when the k value is in the range of 0.24 to 0.15. On the other hand, the optimum k value of an antireflection film for a single layer resist used for a thin film of about 40 nm is 0.4 to 0.5, which is different from the optimum k value of a lower layer film for a two layer resist used at 300 nm or more. . It is shown that the lower layer film for a two-layer resist requires a lower k value, that is, a higher transparent lower layer film.

  Here, as a lower layer film forming material for 193 nm, SPIE vol. 4345 (2001) p50 (Non-Patent Document 4), a copolymer of polyhydroxystyrene and an acrylate ester has been studied. Polyhydroxystyrene has a very strong absorption at 193 nm, and the k value alone is a high value of around 0.6. Therefore, the k value is adjusted to around 0.25 by copolymerizing with an acrylate ester having a k value of almost 0.

  However, with respect to polyhydroxystyrene, the etching resistance of acrylate esters in substrate etching is weak, and a significant proportion of acrylate esters must be copolymerized to lower the k value, resulting in substrate etching. Resistance is significantly reduced. The resistance to etching appears not only in the etching rate but also in the occurrence of surface roughness after etching. The increase in surface roughness after etching becomes more prominent due to the copolymerization of acrylic acid ester.

  One of the higher transparency at 193 nm and higher etching resistance than the benzene ring is a naphthalene ring. Japanese Unexamined Patent Publication No. 2002-14474 (Patent Document 8) proposes a lower layer film having a naphthalene ring and an anthracene ring. However, the k value of naphthol co-condensed novolak resin and polyvinyl naphthalene resin is between 0.3 and 0.4, and the target transparency of 0.1 to 0.3 has not been achieved. I have to raise it. Further, the n value at 193 nm of the naphthol co-condensed novolak resin and the polyvinyl naphthalene resin is low, and as a result of measurement by the present inventors, it is 1.4 for the naphthol co-condensed novolak resin and 1.2 for the polyvinyl naphthalene resin. . Also in the acenaphthylene polymer shown by Unexamined-Japanese-Patent No. 2001-40293 (patent document 9) and Unexamined-Japanese-Patent No. 2002-214777 (patent document 10), the n value in 193 nm is low compared with wavelength 248 nm, and k value is high. Both have not reached the target value. There is a need for a lower layer film that has a high n value, a low k value, is transparent, and has high etching resistance. As a highly transparent resin having high etching resistance, a polymer composed of an alicyclic group, specifically, polynorbornene, a ring-opening metathesis polymer, nortricyclene, and the like can be given. Here, a blend of a polymer obtained by ring-opening metathesis polymerization of tricyclododecenes pendant with an ester or ether in JP 2005-84621 A (Patent Document 11) and a polymer having an aromatic group is used. An underlayer film forming material as a base polymer has been proposed.

On the other hand, a three-layer process has been proposed in which a single-layer resist containing no silicon is formed as an upper layer, an intermediate layer containing silicon underneath, and an organic film thereunder (Non-Patent Document 5: J. Vac. Sci). Technol., 16 (6), Nov./Dec. 1979).
In general, a single-layer resist has better resolution than a silicon-containing resist, and a high-resolution single-layer resist can be used as an exposure imaging layer in a three-layer process.
As the intermediate layer, a spin-on-glass (SOG) film is used, and many SOG films have been proposed.

Here, the optimum optical constant of the lower layer film for suppressing the substrate reflection in the three-layer process is different from that in the two-layer process.
The purpose of suppressing the substrate reflection as much as possible, specifically to reduce it to 1% or less, is the same in both the two-layer process and the three-layer process, whereas the two-layer process has an antireflection effect only on the lower layer film. In the three-layer process, one or both of the intermediate layer and the lower layer can have an antireflection effect.
A silicon-containing layer material imparted with an antireflection effect is proposed in US Pat. No. 6,506,497 (Patent Document 6) and US Pat. No. 6420088 (Patent Document 7).
In general, a multilayer antireflection film has a higher antireflection effect than a single-layer antireflection film, and is widely used industrially as an antireflection film for optical materials.
By giving an antireflection effect to both the intermediate layer and the lower layer, a high antireflection effect can be obtained.
If the silicon-containing intermediate layer can be provided with a function as an antireflection film in the three-layer process, the lower layer film does not need the highest effect as the antireflection film.
As a lower layer film in the case of a three-layer process, higher etching resistance in substrate processing is required than an effect as an antireflection film.
Therefore, it is necessary to use a novolak resin having high etching resistance and containing many aromatic groups as a lower layer film for a three-layer process.

Here, FIG. 3 shows the substrate reflectivity when the k value of the intermediate layer is changed.
A sufficient antireflection effect of 1% or less can be obtained by a low value of 0.2 or less as the k value of the intermediate layer and an appropriate film thickness setting.
As an antireflection film, a k value of 0.2 or more is required to suppress reflection to 1% or less when the film thickness is 100 nm or less (see FIG. 2), but a certain amount of reflection can be suppressed by the lower layer film. For an intermediate layer having a three-layer structure, a k value lower than 0.2 is an optimum value.
Next, FIG. 4 and FIG. 5 show the reflectance change when the thickness of the intermediate layer and the lower layer is changed when the k value of the lower layer film is 0.2 and 0.6.
The lower layer with a k value of 0.2 assumes a lower layer film optimized for a two-layer process, and the lower layer with a k value of 0.6 is close to the k value of novolak or polyhydroxystyrene at 193 nm. is there.
Although the film thickness of the lower layer film varies depending on the topography of the substrate, the film thickness of the intermediate layer hardly varies, and it can be considered that the film can be applied with a set film thickness.
Here, the higher the k value of the lower layer film (in the case of 0.6), the reflection can be suppressed to 1% or less with a thinner film.
When the k value of the lower layer film is 0.2, the thickness of the intermediate layer must be increased in order to reduce the reflection to 1% or less when the film thickness is 250 nm.
Increasing the thickness of the intermediate layer is not preferable because the load on the resist of the uppermost layer is large during dry etching when the intermediate layer is processed.
In order to use the lower layer film as a thin film, not only a high k value but also a higher etching resistance is required.
In recent years, miniaturization has progressed rapidly, and in the dimension of 45 nm LS, the film thickness of the resist has become less than 100 nm from the viewpoint of pattern collapse. Also in the three-layer process, it has become difficult to transfer a resist pattern of 100 nm or less to a silicon-containing intermediate layer, and the silicon-containing intermediate layer is becoming thinner. 4 and 5, if the silicon-containing intermediate layer has an absorption with a k value of about 0.1 regardless of the k value of the lower layer film, for example, if the thickness of the silicon-containing intermediate layer is 50 nm, the reflection is 1% or less. However, there is a demand for using a film thickness of 50 nm or less from the viewpoint of improving the etching accuracy of the silicon-containing intermediate layer. When the film thickness of the silicon-containing intermediate layer is 50 nm or less, the antireflection effect of the silicon-containing intermediate layer is halved, so the same n value and k value as in the case of the bilayer resist lower layer film are required.

JP-A-6-118651 Japanese Patent Laid-Open No. 10-324748 JP-A-11-302382 JP 2002-55456 A JP-A-9-110938 US Pat. No. 6,506,497 US Pat. No. 6420088 JP 2002-14474 A JP 2001-40293 A JP 2002-214777 A JP 2005-84621 A SPIE vol. 1925 (1993) p377 SPIE vol. 3333 (1998) p62 J. et al. Photopolymer Sci. and Technol. Vol. 9 No. 3 (1996) p435-446 SPIE vol. 4345 (2001) p50 J. et al. Vac. Sci. Technol. , 16 (6), Nov. / Dec. 1979

  The present invention has been made in view of such problems, and is a resist underlayer film forming material for a multilayer resist process, for example, a resist upper layer film containing silicon, particularly for a two layer resist process, It functions as an excellent anti-reflection film for short-wavelength exposure, that is, it is more transparent than polyhydroxystyrene, cresol novolak, naphthol novolak, etc., and has optimum n and k values, and etching in substrate processing An object of the present invention is to provide a resist underlayer film forming material having excellent resistance and a method for forming a pattern on a substrate by lithography using the material.

  Therefore, as a result of intensive studies to achieve the above object, the present inventors have found that a polymer obtained by ring-opening metathesis polymerization of a cycloolefin having a carboxyl group or a hydroxy group is, for example, in exposure at a short wavelength of 193 nm. It is a promising material as a resist underlayer film for multilayer resist processes such as a silicon-containing two-layer resist process or a three-layer resist process using a silicon-containing intermediate layer, having an optimum n value and k value, and excellent etching resistance. As a result, the inventors have made the present invention.

  Accordingly, the present invention provides a resist underlayer film forming material for a multilayer resist film used in lithography, which comprises a polymer obtained by ring-opening metathesis polymerization of a cycloolefin having a carboxyl group or a hydroxy group represented by the following general formula (1). There are provided a resist underlayer film forming material and a pattern forming method using the same.

Claim 1:
A photoresist underlayer film-forming material comprising a polymer having a repeating unit represented by the following general formula (1).

(In the general formula (1), R ^{1 to} R ⁴ are the same or different hydrogen atoms, linear, branched or cyclic alkyl groups having 1 to 20 carbon atoms, —R ⁵ — (COOR ⁶ ) _{p, respectively.} , or -R ⁷ - (oR ⁸⁾ is a _q .R ⁵ represents a single bond or a (p + 1) -valent straight, branched or cyclic hydrocarbon group, an ester group, an ether group R ⁷ is a single bond or a (q + 1) -valent straight-chain, branched or cyclic hydrocarbon group having 1 to 20 carbon atoms, an ester group, an ether group or a hydroxy group. P and q are integers of 1 to 3, but when R ⁵ and R ⁷ are single bonds, p and q are each 1. R ⁶ and R ⁸ are hydrogen atoms, Or it is a C1-C20 linear, branched or cyclic alkyl group, and may have a carbonyl group or an ether group. R ¹ to R at least one of ⁴ -R ⁵ - (COOR ⁶⁾ _p or -R ⁷ - (OR ⁸⁾ is _q, at least one labile hydrogen atom or an acid of this R ^6, R ⁸ X is a methylene group, oxygen atom or sulfur atom, n and m are positive numbers from 0 to 5, and (a-1) and (a-2) are 0 ≦ (a-1), respectively. ) ≦ 1.0, 0 ≦ (a−2) ≦ 1.0, and 0 <(a−1) + (a−2) ≦ 1.
Claim 2:
The resist underlayer film forming material according to claim 1, further comprising at least one of an organic solvent, an acid generator, and a crosslinking agent.
Claim 3:
3. The photoresist underlayer film forming material according to claim 1 or 2 is applied on a substrate to be processed, a layer of a photoresist composition is applied on the obtained underlayer film, and radiation is applied to a desired region of the photoresist layer. And developing with a developing solution to form a photoresist pattern, and then processing the photoresist underlayer film layer and the substrate to be processed using the photoresist pattern layer as a mask in a dry etching apparatus. Forming method.
Claim 4:
The dry etching which a photoresist composition contains a silicon atom containing polymer and processes a photoresist lower layer film | membrane using a photoresist layer as a mask is performed using the etching gas which mainly has oxygen gas or hydrogen gas. Pattern forming method.
Claim 5:
3. The photoresist underlayer film-forming material according to claim 1 or 2 is applied on a substrate to be processed, an intermediate layer containing silicon atoms is applied on the obtained underlayer film, and a photoresist is formed on the intermediate layer. Apply a layer of the composition, irradiate a desired area of the photoresist layer, develop with a developer to form a photoresist pattern, and then use the photoresist pattern layer as a mask with a dry etching apparatus as an intermediate film layer The pattern forming method is characterized in that after removing the photoresist pattern layer, the lower film layer and then the substrate to be processed are processed using the processed intermediate film layer as a mask.
Claim 6:
6. The dry etching for processing a lower layer film using a photoresist composition containing a polymer containing no silicon atom and using the intermediate layer film as a mask, using an etching gas mainly composed of oxygen gas or hydrogen gas. Pattern formation method.

  According to the present invention, for example, a resist underlayer film forming material for a multi-layer resist process such as a resist upper layer film containing silicon, particularly for a two-layer resist process, which is excellent particularly for short-wavelength exposure. It functions as an anti-reflection film, is more transparent than polyhydroxystyrene, cresol novolak, naphthol novolak, etc., has an optimal n value (refractive index), k value (quenching coefficient), and is resistant to etching in substrate processing An excellent resist underlayer film forming material can be obtained.

  Hereinafter, the best mode for carrying out the present invention will be described, but the present invention is not limited thereto.

  As described above, the benzene ring has a very strong absorption at a wavelength of 193 nm, and thus has a high k value, and has a low n value due to anomalous dispersion of the refractive index. The reflection becomes larger. In the naphthalene ring, the acenaphthalene ring, and the anthracene ring, the absorption is shifted to the longer wavelength side, so that the absorption becomes small and the k value becomes low, but the n value is low. The aromatic group cannot control the k value depending on the degree of condensation, but cannot obtain the same n value as the resist film. On the other hand, compounds having alkanes and alkenes are characterized by high n values and low k values.

  The resist underlayer film formed from the resist underlayer film forming material of the present invention described above is a novel resist underlayer film applicable to a multilayer resist process such as a silicon-containing two-layer resist process and a three-layer resist process having a silicon-containing intermediate layer. . In particular, when exposure is performed at a short wavelength such as 193 nm, the antireflection effect is excellent when the film thickness is 200 nm or more, and the etching resistance under substrate etching conditions is excellent.

  In addition, by adding any one or more of an organic solvent, a crosslinking agent, and an acid generator to the resist underlayer film forming material, it is possible to improve the coating property of the material on a substrate or the like. The crosslinking reaction in the resist underlayer film can be promoted by baking after coating. Therefore, such a resist underlayer film has good film thickness uniformity, is less likely to be intermixed with the resist upper layer film, and has low diffusion of low molecular components into the resist upper layer film.

  That is, the resist underlayer film forming material of the present invention is a resist underlayer film forming material of a multilayer resist film used in lithography, and includes at least a polymer obtained by ring-opening metathesis polymerization of a cycloolefin having a carboxyl group or a hydroxy group. It is characterized by that.

In this case, the polymer has a repeating unit represented by the following general formula (1).

(In the general formula (1), R ^{1 to} R ⁴ are the same or different hydrogen atoms, linear, branched or cyclic alkyl groups having 1 to 20 carbon atoms, —R ⁵ — (COOR ⁶ ) _{p, respectively.} , or -R ⁷ - (oR ⁸⁾ is a _q .R ⁵ represents a single bond or a (p + 1) -valent straight, branched or cyclic hydrocarbon group, an ester group, an ether group R ⁷ is a single bond or a (q + 1) -valent straight-chain, branched or cyclic hydrocarbon group having 1 to 20 carbon atoms, an ester group, an ether group or a hydroxy group. P and q are integers of 1 to 3, but when R ⁵ and R ⁷ are single bonds, p and q are each 1. R ⁶ and R ⁸ are hydrogen atoms, Or it is a C1-C20 linear, branched or cyclic alkyl group, and may have a carbonyl group or an ether group. R ¹ to R at least one of ⁴ -R ⁵ - (COOR ⁶⁾ _p or -R ⁷ - (OR ⁸⁾ is _q, at least one labile hydrogen atom or an acid of this R ^6, R ⁸ X is a methylene group, oxygen atom or sulfur atom, n and m are positive numbers from 0 to 5, and (a-1) and (a-2) are 0 ≦ (a-1), respectively. ) ≦ 1.0, 0 ≦ (a−2) ≦ 1.0, and 0 <(a−1) + (a−2) ≦ 1.

In the polymer used for forming the lower layer film of the present invention, at least one of R ^{1 to} R ⁴ is —R ⁵ — (COOR ⁶ ) _p or —R ⁷ — (OR ⁸ ) _q , and R ⁶ , At least one of R ⁸ is a hydrogen atom or an acid labile group, and includes a carboxyl group, a hydroxy group, or a group in which the hydrogen atom of these hydroxyl groups is substituted with an acid labile group. A carboxyl group and a hydroxy group can form a dense film by crosslinking with an acid and heating. The carboxyl group and the hydroxy group may inactivate the metathesis catalyst, and it is preferable to protect the hydroxyl group of the carboxyl group and the hydroxy group with an acid leaving group during the polymerization. After the polymerization, a carboxyl group and a hydroxy group are obtained by deprotection treatment by heating in the presence of an acid catalyst. Alternatively, a carboxyl group and a hydroxy group can be obtained by deprotecting the acid labile group with an acid generated from the thermal acid generator by baking after coating the underlayer film.

^{Incidentally, -R 5 - (COOR 6)} p, -R 7 - (OR 8) q , when R ^5, R ⁷ is a single bond, -COOR ^6, represented by -OR ^8, p, q is 1 In this case, it is represented by —R ⁵ —COOR ⁶ , —R ⁷ —OR ^{8. In} this case, R ⁵ and R ⁷ are ester groups (—COO—), ether groups (—O—) or hydroxy groups (—OH). ) May be a linear, branched or cyclic alkylene group having 1 to 20 carbon atoms. When p and q are 2,

When p and q are 3,

It is represented by

  The polymer having the repeating unit of the above formula (1) can be obtained by subjecting a corresponding monomer to ring-opening metathesis polymerization, and then performing hydrogenation as necessary. In this case, a known method can be adopted as the ring-opening metathesis polymerization method and the hydrogenation method.

  Examples of the ring-opening metathesis polymerization method and the hydrogenation method include JP-A-1-132625, JP-A-1-132625, JP-A-1-240517, JP-A-5-155588, and JP-A-7-19679. Nos. 11-1130843, 11-130844, 11-130845, and the like.

  Examples of the monomer for obtaining the repeating units (a-1) and (a-2) can be exemplified below.

In the above structural formula, R is an acid labile group.
Here, the acid labile group represented by R is variously selected and may be the same or different, and the hydrogen atom of the hydroxyl group of the hydroxyl group or carboxyl group is particularly represented by the following formula (AL-10), (AL- 11), each alkyl group such as a tertiary alkyl group having 4 to 40 carbon atoms, an oxoalkyl group having 4 to 20 carbon atoms, or a trimethylsilyl group represented by the following formula (AL-12) has 1 to 1 carbon atoms. 6 or the like, and the like.

In the formulas (AL-10) and (AL-11), R ⁵¹ and R ⁵⁴ are monovalent hydrocarbon groups such as linear, branched or cyclic alkyl groups having 1 to 40 carbon atoms, particularly 1 to 20 carbon atoms. And may contain heteroatoms such as oxygen, sulfur, nitrogen and fluorine. R ⁵² and R ⁵³ are each a hydrogen atom or a monovalent hydrocarbon group such as a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, and includes heteroatoms such as oxygen, sulfur, nitrogen and fluorine. However, a5 is an integer of 0-10. R ⁵² and R ⁵³ , R ⁵² and R ⁵⁴ , R ⁵³ and R ⁵⁴ are bonded to each other to form a ring having 3 to 20 carbon atoms, particularly 4 to 16 carbon atoms, together with the carbon atom or carbon atom and oxygen atom to which they are bonded. May be.
R ⁵⁵ , R ⁵⁶ , and R ⁵⁷ are each a monovalent hydrocarbon group such as a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, and include heteroatoms such as oxygen, sulfur, nitrogen, and fluorine. But you can. Alternatively, R ⁵⁵ and R ⁵⁶ , R ⁵⁵ and R ⁵⁷ , R ⁵⁶ and R ⁵⁷ may be bonded to form a ring having 3 to 20 carbon atoms, particularly 4 to 16 carbon atoms, together with the carbon atom to which they are bonded.

  Specific examples of the compound represented by the formula (AL-10) include tert-butoxycarbonyl group, tert-butoxycarbonylmethyl group, tert-amyloxycarbonyl group, tert-amyloxycarbonylmethyl group, 1-ethoxyethoxycarbonyl. Examples include a methyl group, 2-tetrahydropyranyloxycarbonylmethyl group, 2-tetrahydrofuranyloxycarbonylmethyl group and the like, and substituents represented by the following general formulas (AL-10) -1 to (AL-10) -10. .

In the formulas (AL-10) -1 to (AL-10) -10, R ⁵⁸ is the same or different linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, aryl having 6 to 20 carbon atoms. Group or a C7-20 aralkyl group is shown. R ⁵⁹ represents a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms. R ⁶⁰ represents an aryl group having 6 to 20 carbon atoms or an aralkyl group having 7 to 20 carbon atoms.

  Examples of the acetal compound represented by the formula (AL-11) are (AL-11) -1 to (AL-11) -34.

  Next, examples of the tertiary alkyl group represented by the formula (AL-12) include tert-butyl group, triethylcarbyl group, 1-ethylnorbornyl group, 1-methylcyclohexyl group, 1-ethylcyclopentyl group, tert -An amyl group etc. or the following general formula (AL-12) -1-(AL-12) -16 can be mentioned.

In the above formula, R ⁶⁴ represents the same or different linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group having 7 to 20 carbon atoms. R ⁶⁵ and R ^{67 each} represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms. R ⁶⁶ represents an aryl group having 6 to 20 carbon atoms or an aralkyl group having 7 to 20 carbon atoms.

  In the case of a polymer used for a photoresist, since a highly transparent characteristic is required, the hydrogenation ratio of the olefin after polymerization needs to be almost 100%, but when applied as a lower layer film, it has a moderate absorption. Since it is necessary, 100% hydrogenation is not particularly necessary. At this time, the ratio between the non-hydrogenated repeating unit (a-1) and the hydrogenated repeating unit (a-2) is 0 ≦ (a-1) ≦ 1.0, 0 ≦ (a− 2) ≤1.0, 0 <(a-1) + (a-2) ≤1, preferably 0≤ (a-1) ≤0.98, 0≤ (a-2) ≤0 .98, 0.1≤ (a-1) + (a-2) ≤1.0, more preferably 0≤ (a-1) ≤0.95, 0≤ (a-2) ≤0.95, 0.2 ≦ (a-1) + (a-2) ≦ 1.0, but changing the copolymerization ratio depending on the kind and addition ratio of the crosslinkable polymer having an aromatic group to be blended, the n value and the k value Can be optimized.

  The polymer by the ring-opening metathesis polymerization of the present invention has the repeating units (a-1) and (a-2) represented by the general formula (1) as essential units. The monomer b for adjusting the viscosity can be copolymerized. These monomers b may not have a crosslinking group such as a carboxyl group or a hydroxy group, and can be specifically exemplified below.

When the total of the repeating units (a-1) and (a-2) is a, the copolymerization ratio with b is 0 <a ≦ 1.0, 0 ≦ b <1.0, preferably 0.1 ≦ a ≦ 1.0, 0 ≦ b ≦ 0.9, more preferably 0.2 ≦ a ≦ 1.0, 0 ≦ b ≦ 0.8, and a + b = 1.
In addition, (a-1) + (a-2) = 1 and a + b = 1 indicate that the total amount of these repeating units is 100 mol% with respect to the total amount of all the repeating units.

  The weight average molecular weight in terms of polystyrene by gel permeation chromatography (GPC) of the above polymer is preferably 1,000 or more and 200,000 or less.

The underlayer film-forming material of the present invention comprises a ring-opening metathesis polymer having a carboxyl group, a hydroxy group, or a group obtained by substituting a hydrogen atom of these hydroxyl groups with an acid labile group, represented by the general formula (1). However, a crosslinkable polymer having an aromatic group or a crosslinkable compound having an aromatic group can be added to control the n value and k value, improve etching resistance, and improve embedding characteristics.
Examples of the crosslinkable group include a carboxyl group, a hydroxy group, an epoxy group, and a thioepoxy group.
Specific examples of the monomer for forming the repeating unit c having a carboxyl group, a hydroxy group, an epoxy group, and a thioepoxy group can be given below.

(In the above formula, R ¹⁰ represents a hydrogen atom or a methyl group, and p and q are integers of 1 to 3.)

  Furthermore, the repeating unit c having a carboxyl group, a hydroxy group, and an epoxy group can be copolymerized with the repeating unit d for improving etching resistance. The repeating unit d is represented by the following general formula (2).

(In the above general formula (2), R ¹⁵ is a hydrogen atom or a methyl group. R ¹¹ , R ¹² and R ¹³ are a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group, a hydroxy group, an acetoxy group, or An alkoxycarbonyl group or an aryl group having 6 to 10 carbon atoms, and R ¹⁴ is an aryl group having 6 to 30 carbon atoms or a condensed polycyclic hydrocarbon group, —O—R ¹⁶ , —C (═O) —O. —R ¹⁶ , —O—C (═O) —R ¹⁶ , —C (═O) —NR ¹⁷ —R ¹⁶ , n1 is an integer of 0 to 4, and p1 is an integer of 0 to 6. ¹⁶ is a monovalent hydrocarbon group having 6 to 30 carbon atoms, particularly an aryl group or a condensed hydrocarbon group, and R ¹⁷ is a hydrogen atom or a monovalent hydrocarbon group having 1 to 6 carbon atoms.)

  Here, the repeating unit (d-1) is derived from one selected from indenes, benzofurans, and benzothiophenes, the repeating unit (d-2) is derived from acenaphthylenes, and the repeating unit (d-3) is It originates from nortricyclenes, and the repeating unit (d-4) is derived from a C6-C30 aromatic hydrocarbon or condensed hydrocarbon having a vinyl group.

  Specific examples of aromatic hydrocarbons having 6 to 30 carbon atoms and condensed hydrocarbons having a vinyl group include styrene, vinyl naphthalene, vinyl anthracene, vinyl pyrene, vinyl fluorene, vinyl phenanthrene, vinyl chrysene, vinyl naphthacene, vinyl pentacene, Examples include vinyl acenaphthene and vinyl fluorene.

When R ¹⁴ in the general formula (2) is —O—R ¹⁶ , it is a repeating unit obtained by copolymerizing vinyl ethers having R ¹⁶ , and R ¹⁶ is a monovalent carbonization having 7 to 30 carbon atoms. It is a hydrogen group. Such vinyl ethers can be exemplified below.

When R ¹⁴ in the general formula (2) is —C (═O) —O—R ¹⁶ , it is a repeating unit obtained by copolymerizing a (meth) acryl having R ¹⁶ , and R ¹⁶ is A monovalent hydrocarbon group having 7 to 30 carbon atoms, specifically exemplified below. When R ⁵ is —C (═O) —NR ¹⁷ —R ¹⁶ , the —C (═O) —O— moiety of the following exemplified compounds is replaced with —C (═O) —NR ¹⁷ —. The substituted compound can be exemplified. In the following formula, R ⁶ is as described above.

When R ⁵ in the general formula (2) is —O—C (═O) —R ¹⁶ , it is a repeating unit obtained by copolymerizing vinyl esters having R ¹⁶ , and R ¹⁶ is the number of carbon atoms. 7 to 30 monovalent hydrocarbon groups. Such vinyl esters can be exemplified below. In the following formula, R ⁶ is as described above.

  Here, the copolymerization ratio of c and d is 0.1 ≦ c ≦ 1.0, 0 ≦ (d−1) ≦ 0.95, 0 ≦ (d−2) ≦ 0.95, 0 ≦ (d −3) ≦ 0.95, 0 ≦ (d−4) ≦ 0.95, 0.5 ≦ c + (d−1) + (d−2) + (d−3) + (d−4) ≦ 1 0.0, more preferably 0.15 ≦ c ≦ 1.0, 0 ≦ (d−1) ≦ 0.9, 0 ≦ (d-2) ≦ 0.9, 0 ≦ (d-3) ≦ 0 .9, 0 ≦ (d−4) ≦ 0.9, 0.6 ≦ c + (d−1) + (d−2) + (d−3) + (d−4) ≦ 1.0, more preferably Are 0.2 ≦ c ≦ 1.0, 0 ≦ (d−1) ≦ 0.85, 0 ≦ (d−2) ≦ 0.85, 0 ≦ (d−3) ≦ 0.85, 0 ≦ ( d-4) ≦ 0.85, 0.7 ≦ c + (d−1) + (d−2) + (d−3) + (d−4) ≦ 1.0.

  Note that c + (d-1) + (d-2) + (d-3) + (d-4) = 1 is preferable, but c + (d-1) + (d-2) + (d -3) + (d-4) = 1 means that in the polymer compound (copolymer) containing the repeating units c and d, the repeating units c, (d-1), (d-2), (d- 3) It shows that the total amount of (d-4) is 100 mol% with respect to the total amount of all repeating units.

In order to synthesize these copolymers for blending, one method is to carry out heat polymerization by adding a monomer of repeating unit c and a monomer of repeating unit d in an organic solvent to which a radical polymerization initiator or a cationic polymerization initiator is added. When the monomer of the repeating unit c contains a hydroxy group, the hydroxy group can be substituted with an acetyl group, and the resulting polymer compound can be subjected to alkali hydrolysis in an organic solvent to deprotect the acetyl group. Examples of the organic solvent used at the time of polymerization include toluene, benzene, tetrahydrofuran, diethyl ether, dioxane and the like.
Examples of radical polymerization initiators include 2,2′-azobisisobutyronitrile (AIBN), 2,2′-azobis (2,4-dimethylvaleronitrile), dimethyl-2,2-azobis (2-methylpropyl). Pionate), benzoyl peroxide, lauroyl peroxide and the like can be exemplified, and the polymerization is preferably carried out by heating to 50 to 80 ° C.
Examples of the cationic polymerization initiator include sulfuric acid, phosphoric acid, hydrochloric acid, nitric acid, hypochlorous acid, trichloroacetic acid, trifluoroacetic acid, methanesulfonic acid, trifluoromethanesulfonic acid, camphorsulfonic acid, tosylic acid and the like, BF ₃ , AlCl _3, TiCl _4, SnCl ₄ other Friedel-Crafts catalyst such _{as, I 2, (C 6 H} 5) 3 substance which easily generates a cation as CCl are used.

  The reaction time is 2 to 100 hours, preferably 5 to 20 hours. Ammonia water, triethylamine, etc. can be used as the base during the alkali hydrolysis. The reaction temperature is −20 to 100 ° C., preferably 0 to 60 ° C., and the reaction time is 0.2 to 100 hours, preferably 0.5 to 20 hours.

  The polystyrene-converted weight average molecular weight of the copolymer consisting of c and d1 to d4 according to the present invention by gel permeation chromatography (GPC) is preferably in the range of 1,500 to 200,000, more preferably 2,000 to The range is 100,000. The molecular weight distribution is not particularly limited, and low molecular weight and high molecular weight substances can be removed by fractionation to reduce the degree of dispersion. The weight of two or more general formulas (1) having different molecular weights and degrees of dispersion can be reduced. Mixtures of blends or two or more polymers of the general formula (1) having different composition ratios may be mixed.

  In order to further improve the transparency at a wavelength of 193 nm of the copolymer composed of c and d1 to d4 blended with the polymer by the ring-opening metathesis polymerization of the present invention, hydrogenation can be performed. A preferable hydrogenation ratio is 80 mol% or less, more preferably 60 mol% or less of the aromatic group.

  In addition, the compounding quantity of the copolymer Q which has the repeating unit of said c, d is 0-1,000 with respect to 100 parts (mass part, the following similarly) of the polymer P which has a repeating unit of Formula (1). Parts, particularly 0 to 300 parts.

  When a deep hole pattern is formed on the base substrate, it is necessary to fill the holes by applying a lower layer film. In order to fill the bottom of the hole without generating a void, a method of using a polymer having a low glass transition point and embedding a resin while causing heat flow at a temperature lower than the crosslinking temperature is used (for example, JP 2000-294504 A). No. publication).

Since the hydrogenated ring-opening metathesis polymer has a lower glass transition point than before hydrogenation, there is an advantage that the embedding property is improved. Also, polymers having a low glass transition point, particularly polymers having a glass transition point of 180 ° C. or lower, particularly 100 to 170 ° C., such as acrylic derivatives, vinyl alcohol, vinyl ethers, allyl ethers, styrene derivatives, allylbenzene derivatives, ethylene, propylene Glass transition point by blending with one or more copolymer selected from olefins such as butadiene, novolak resin, dicyclopentadiene resin, phenolic low nuclei, calixarenes, fullerenes The via hole filling characteristics can be improved.
Among these, polymers and compounds having phenolic hydroxy groups, such as novolak resins, dicyclopentadiene resins, phenolic low-nuclear substances, calixarenes, and the like can be preferably used.

  The blending amount of the blend R that lowers the glass transition point and improves the via hole embedding property is 0 to 1,000 parts, particularly 100 parts of the polymer P having the repeating unit of the formula (1). It is preferably 0 to 300 parts.

  The phenols for obtaining the novolak resin are phenol, o-cresol, m-cresol, p-cresol, 2,3-dimethylphenol, 2,5-dimethylphenol, 3,4-dimethylphenol, 3,5. -Dimethylphenol, 2,4-dimethylphenol, 2,6-dimethylphenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, 2-t-butylphenol, 3-t-butylphenol, 4- t-butylphenol, 2-phenylphenol, 3-phenylphenol, 4-phenylphenol, 3,5-diphenylphenol, 2-naphthylphenol, 3-naphthylphenol, 4-naphthylphenol, 4-tritylphenol, resorcinol, 2- Methylresorcinol, 4- Tilresorcinol, 5-methylresorcinol, catechol, 4-t-butylcatechol, 2-methoxyphenol, 3-methoxyphenol, 2-propylphenol, 3-propylphenol, 4-propylphenol, 2-isopropylphenol, 3-isopropyl Phenol, 4-isopropylphenol, 2-methoxy-5-methylphenol, 2-t-butyl-5-methylphenol, pyrogallol, thymol, isothymol, 4,4 ′-(9H-fluorene-9-ylidene) bisphenol, 2 , 2′-dimethyl-4,4 ′-(9H-fluorene-9-ylidene) bisphenol, 2,2′-diallyl-4,4 ′-(9H-fluorene-9-ylidene) bisphenol, 2,2′- Difluoro-4,4 ′-(9H-full Len-9-ylidene) bisphenol, 2,2'-diphenyl-4,4 '-(9H-fluorene-9-ylidene) bisphenol, 2,2'-dimethoxy-4,4'-(9H-fluorene-9- Ylidene) bisphenol, 2,3,2 ′, 3′-tetrahydro- (1,1 ′)-spirobiindene-6,6′-diol, 3,3,3 ′, 3′-tetramethyl-2,3 , 2 ′, 3′-tetrahydro- (1,1 ′)-spirobiindene-6,6′-diol, 3,3,3 ′, 3 ′, 4,4′-hexamethyl-2,3,2 ′ , 3′-Tetrahydro- (1,1 ′)-spirobiindene-6,6′-diol, 2,3,2 ′, 3′-tetrahydro- (1,1 ′)-spirobiindene-5,5 '-Diol, 5,5'-dimethyl-3,3,3', 3'-teto Lamethyl-2,3,2 ′, 3′-tetrahydro- (1,1 ′)-spirobiindene-6,6′-diol, 1-naphthol, 2-naphthol, 2-methyl-1-naphthol, 4- Dihydroxynaphthalene such as methoxy-1-naphthol, 7-methoxy-2-naphthol and 1,5-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, methyl 3-hydroxy-naphthalene-2-carboxylate , Indene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, norbornadiene, 5-vinylnorborna-2-ene, α-pinene, β-pinene, Limo Nen etc. are mentioned, Furthermore, the bisphenol compound or bisnaphthol compound shown by the following general formula (3a) or (3b) can be mentioned.

(In the above formula, R ²¹ and R ²² are the same or different hydrogen atoms, linear, branched or cyclic alkyl groups having 1 to 10 carbon atoms, aryl groups having 6 to 10 carbon atoms, or 2 to 2 carbon atoms. 10 is an alkenyl group, A is a single bond, or an alkylene group or alkenylene group having 1 to 40 carbon atoms, which may be an alkylene group or alkenylene group having a cyclic structure, and has a bridged cyclic hydrocarbon group. And may have a hetero atom such as a double bond or sulfur, or may have an aromatic group having 6 to 30 carbon atoms, and n2 is an integer of 1 to 4.)

  Since the bisphenol compound or bisnaphthol compound represented by the general formula (3a) or (3b) has a characteristic that it is difficult to evaporate by heating, the compound may be added as it is without being novolakized.

  One of the performances required for the resist lower layer film is that there is no intermixing with the resist upper layer film and that there is no diffusion of low molecular components into the resist upper layer film (for example, Proc. SPIE vol. 2195, p225-229 (1994)). In order to prevent these problems, a method is generally employed in which a resist underlayer film is formed on a substrate by spin coating or the like and then thermally crosslinked by baking. Therefore, there are a method of adding a crosslinking agent as a component of the resist underlayer film forming material and a method of introducing a crosslinkable substituent into the polymer. As a method for introducing a crosslinkable substituent into the polymer, the hydroxy group of the polymer of general formula (1), or the novolak resin, the hydroxy group of the bisphenol compound or bisnaphthol compound represented by general formula (3a) or (3b) Is a method of glycidyl etherification.

  Specific examples of the crosslinking agent that can be used in the present invention include a melamine compound, a guanamine compound, a glycoluril compound, or a urea compound substituted with at least one group selected from a methylol group, an alkoxymethyl group, and an acyloxymethyl group. Examples include compounds containing double bonds such as epoxy compounds, isocyanate compounds, azide compounds, and alkenyl ether groups. These may be used as additives, but may be introduced as pendant groups in the polymer side chain. A compound containing a hydroxy group can also be used as a crosslinking agent.

  Among specific examples of the crosslinking agent, when an epoxy compound is further exemplified, tris (2,3-epoxypropyl) isocyanurate, trimethylolmethane triglycidyl ether, trimethylolpropane triglycidyl ether, triethylolethane triglycidyl ether and the like Illustrated. Specific examples of the melamine compound include hexamethylol melamine, hexamethoxymethyl melamine, a compound in which 1 to 6 methylol groups of hexamethylol melamine are methoxymethylated, or a mixture thereof, hexamethoxyethyl melamine, hexaacyloxymethyl melamine, Examples thereof include compounds in which 1 to 6 methylol groups of hexamethylolmelamine are acyloxymethylated, or a mixture thereof. Examples of the guanamine compound include tetramethylolguanamine, tetramethoxymethylguanamine, a compound in which 1 to 4 methylol groups of tetramethylolguanamine are methoxymethylated, or a mixture thereof, tetramethoxyethylguanamine, tetraacyloxyguanamine, and tetramethylolguanamine. A compound in which ˜4 methylol groups are acyloxymethylated or a mixture thereof may be mentioned. Examples of the glycoluril compound include tetramethylol glycoluril, tetramethoxyglycoluril, tetramethoxymethylglycoluril, a compound in which 1 to 4 methylol groups of tetramethylolglycoluril are methoxymethylated, or a mixture thereof, and tetramethylolglycoluril methylol. Examples thereof include compounds in which 1 to 4 of the groups are acyloxymethylated or a mixture thereof. Examples of the urea compound include tetramethylol urea, tetramethoxymethyl urea, a compound in which 1 to 4 methylol groups of tetramethylol urea are methoxymethylated, a mixture thereof, tetramethoxyethyl urea, and the like.

  Examples of the isocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, and cyclohexane diisocyanate. Examples of the azide compound include 1,1′-biphenyl-4,4′-bisazide and 4,4′-methylidenebis. Examples include azide and 4,4′-oxybisazide.

  Examples of the compound containing an alkenyl ether group include ethylene glycol divinyl ether, triethylene glycol divinyl ether, 1,2-propanediol divinyl ether, 1,4-butanediol divinyl ether, tetramethylene glycol divinyl ether, neopentyl glycol divinyl ether, Examples include trimethylolpropane trivinyl ether, hexanediol divinyl ether, 1,4-cyclohexanediol divinyl ether, pentaerythritol trivinyl ether, pentaerythritol tetravinyl ether, sorbitol tetravinyl ether, sorbitol pentavinyl ether, trimethylolpropane trivinyl ether, and the like.

  The compounding amount of the crosslinking agent in the resist underlayer film forming material of the present invention is 5 to 100 parts of base polymer (total resin content) [that is, the total amount of the polymer P, copolymer Q and blend R]. 50 parts are preferable, and 10 to 40 parts are particularly preferable. If it is less than 5 parts, it may cause mixing with the resist film, and if it exceeds 50 parts, the antireflection effect may be reduced, or the film after crosslinking may be cracked.

  In the resist underlayer film forming material of the present invention, an acid generator for further promoting a crosslinking reaction by heat or the like can be added. There are acid generators that generate an acid by thermal decomposition and those that generate an acid by light irradiation, and any of them can be added.

As an acid generator used in the resist underlayer film forming material of the present invention,
i. An onium salt of the following general formula (P1a-1), (P1a-2), (P1a-3) or (P1b),
ii. A diazomethane derivative of the following general formula (P2):
iii. A glyoxime derivative of the following general formula (P3):
iv. A bissulfone derivative of the following general formula (P4):
v. A sulfonic acid ester of an N-hydroxyimide compound of the following general formula (P5),
vi. β-ketosulfonic acid derivatives,
vii. Disulfone derivatives,
viii. Nitrobenzyl sulfonate derivatives,
ix. Examples thereof include sulfonic acid ester derivatives.

Wherein R ^101a , R ^101b and R ^101c are each a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, an alkenyl group, an oxoalkyl group or an oxoalkenyl group, and an aryl having 6 to 20 carbon atoms. Group, an aralkyl group having 7 to 12 carbon atoms or an aryloxoalkyl group, part or all of hydrogen atoms of these groups may be substituted by an alkoxy group, etc. R ^101b and R ^{101c May} form a ring, and in the case of forming a ring, R ^101b and R ^101c each represent an alkylene group having 1 to 6 carbon atoms, K ⁻ represents a non-nucleophilic counter ion, R ^101d , R ^101e , R ^101f , and R ^101g are represented by adding a hydrogen atom to R ^101a , R ^101b , and R ^101c , R ^101d and R ^101e , and R ^101d , R ^101e, and R ^101f may form a ring. In the case of forming a ring, R ^101d and R ^101e and R ^101d and R ^{10 1e} and R ^101f represent an alkylene group having 3 to 10 carbon atoms or a heteroaromatic ring having a nitrogen atom in the ring in the figure.

R ^101a , R ^101b , R ^101c , R ^101d , R ^101e , R ^101f and R ^101g may be the same as or different from each other. Specifically, as an alkyl group, a methyl group, an ethyl group, a propyl group , Isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group, octyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclopropylmethyl group, 4-methylcyclohexyl Group, cyclohexylmethyl group, norbornyl group, adamantyl group and the like. Examples of the alkenyl group include a vinyl group, an allyl group, a propenyl group, a butenyl group, a hexenyl group, and a cyclohexenyl group. Examples of the oxoalkyl group include 2-oxocyclopentyl group, 2-oxocyclohexyl group, and the like. 2-oxopropyl group, 2-cyclopentyl-2-oxoethyl group, 2-cyclohexyl-2-oxoethyl group, 2- (4 -Methylcyclohexyl) -2-oxoethyl group and the like can be mentioned. Examples of the oxoalkenyl group include 2-oxo-4-cyclohexenyl group and 2-oxo-4-propenyl group. Examples of the aryl group include a phenyl group, a naphthyl group, a p-methoxyphenyl group, an m-methoxyphenyl group, an o-methoxyphenyl group, an ethoxyphenyl group, a p-tert-butoxyphenyl group, and an m-tert-butoxyphenyl group. Alkylphenyl groups such as alkoxyphenyl groups, 2-methylphenyl groups, 3-methylphenyl groups, 4-methylphenyl groups, ethylphenyl groups, 4-tert-butylphenyl groups, 4-butylphenyl groups, dimethylphenyl groups, etc. Alkyl naphthyl groups such as methyl naphthyl group and ethyl naphthyl group, alkoxy naphthyl groups such as methoxy naphthyl group and ethoxy naphthyl group, dialkyl naphthyl groups such as dimethyl naphthyl group and diethyl naphthyl group, dimethoxy naphthyl group and diethoxy naphthyl group Dialkoxynaphthyl group And the like. Examples of the aralkyl group include a benzyl group, a phenylethyl group, and a phenethyl group. Examples of the aryloxoalkyl group include 2-aryl-2-oxoethyl group such as 2-phenyl-2-oxoethyl group, 2- (1-naphthyl) -2-oxoethyl group, and 2- (2-naphthyl) -2-oxoethyl group. Groups and the like. Non-nucleophilic counter ions of K ⁻ include halide ions such as chloride ion and bromide ion, fluoroalkyl sulfonates such as triflate, 1,1,1-trifluoroethane sulfonate, and nonafluorobutane sulfonate, tosylate, and benzene sulfonate. Aryl sulfonates such as 4-fluorobenzene sulfonate, 1,2,3,4,5-pentafluorobenzene sulfonate, alkyl sulfonates such as mesylate and butane sulfonate, (trifluoromethylsulfonyl) imide, bis (perfluoroethylsulfonyl) Imido acids such as imide and bis (perfluorobutylsulfonyl) imide, methide acids such as tris (trifluoromethylsulfonyl) methide, tris (perfluoroethylsulfonyl) methide, and the following general formula Sulfonate position alpha represented by K-1) is fluoro substituted, alpha represented by the following general formula (K-2), β-position include sulfonates fluorine substituted.

(In the above formula (K-1), ^R102 is a hydrogen atom, a linear, branched or cyclic alkyl group or acyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, or 6 carbon atoms. An aryl group or an aryloxy group of -20, wherein R ¹⁰³ is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, or an alkenyl group having 2 to 20 carbon atoms; Group or an aryl group having 6 to 20 carbon atoms.)

The heteroaromatic ring in which R ^101d , R ^101e , R ^101f and R ^101g have a nitrogen atom in the formula is an imidazole derivative (for example, imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole). Etc.), pyrazole derivatives, furazane derivatives, pyrroline derivatives (eg pyrroline, 2-methyl-1-pyrroline etc.), pyrrolidine derivatives (eg pyrrolidine, N-methylpyrrolidine, pyrrolidinone, N-methylpyrrolidone etc.), imidazoline derivatives, imidazolidine Derivatives, pyridine derivatives (eg pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4- (1-butylpentyl) pyridine, dimethylpyridine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridy 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridone, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2- (1 -Ethylpropyl) pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives , Indoline derivatives, quinoline derivatives (eg quinoline, 3-quinolinecarbonitrile, etc.), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazi Derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives, etc. Is done.

  (P1a-1) and (P1a-2) have the effects of both a photoacid generator and a thermal acid generator, while (P1a-3) acts as a thermal acid generator.

(In the formula, R ^102a and R ^102b each represent a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms. R ¹⁰³ is a linear, branched or cyclic alkylene having 1 to 10 carbon atoms. R ^104a and R ^104b each represent a 2-oxoalkyl group having 3 to 7 carbon atoms, and K ⁻ represents a non-nucleophilic counter ion.)

Specific examples of the alkyl group for R ^102a and R ^102b include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, a pentyl group, a hexyl group, and a heptyl group. Octyl group, cyclopentyl group, cyclohexyl group, cyclopropylmethyl group, 4-methylcyclohexyl group, cyclohexylmethyl group and the like. As the alkylene group for R ¹⁰³ , methylene group, ethylene group, propylene group, butylene group, pentylene group, hexylene group, heptylene group, octylene group, nonylene group, 1,4-cyclohexylene group, 1,2- Examples include cyclohexylene group, 1,3-cyclopentylene group, 1,4-cyclooctylene group, 1,4-cyclohexanedimethylene group and the like. ^Examples of the 2-oxoalkyl group of R ^104a and R ^104b include a 2-oxopropyl group, a 2-oxocyclopentyl group, a 2-oxocyclohexyl group, and a 2-oxocycloheptyl group. K ^- is the formula (P1a-1), can be exemplified the same ones as described in (P1a-2) and (P1a-3).

(In the formula, R ¹⁰⁵ and R ¹⁰⁶ are linear, branched or cyclic alkyl groups or halogenated alkyl groups having 1 to 12 carbon atoms, aryl groups or halogenated aryl groups having 6 to 20 carbon atoms, or carbon atoms. 7 to 12 aralkyl groups are shown.)

^Examples of the alkyl group of R ¹⁰⁵ and R ¹⁰⁶ include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group, octyl group, amyl Group, cyclopentyl group, cyclohexyl group, cycloheptyl group, norbornyl group, adamantyl group and the like. Examples of the halogenated alkyl group include a trifluoromethyl group, a 1,1,1-trifluoroethyl group, a 1,1,1-trichloroethyl group, and a nonafluorobutyl group. As the aryl group, an alkoxyphenyl group such as a phenyl group, p-methoxyphenyl group, m-methoxyphenyl group, o-methoxyphenyl group, ethoxyphenyl group, p-tert-butoxyphenyl group, m-tert-butoxyphenyl group, Examples thereof include alkylphenyl groups such as 2-methylphenyl group, 3-methylphenyl group, 4-methylphenyl group, ethylphenyl group, 4-tert-butylphenyl group, 4-butylphenyl group, and dimethylphenyl group. Examples of the halogenated aryl group include a fluorophenyl group, a chlorophenyl group, and 1,2,3,4,5-pentafluorophenyl group. Examples of the aralkyl group include a benzyl group and a phenethyl group.

(Wherein R ¹⁰⁷ , R ¹⁰⁸ and R ¹⁰⁹ are each a linear, branched or cyclic alkyl group or halogenated alkyl group having 1 to 12 carbon atoms, an aryl group or halogenated aryl group having 6 to 20 carbon atoms, Or an aralkyl group having 7 to 12 carbon atoms, R ¹⁰⁸ and R ¹⁰⁹ may be bonded to each other to form a cyclic structure, and in the case of forming a cyclic structure, R ¹⁰⁸ and R ¹⁰⁹ each have 1 to 6 carbon atoms. And R ¹⁰⁵ is the same as in the formula (P2).

Examples of the alkyl group, halogenated alkyl group, aryl group, halogenated aryl group, and aralkyl group of R ¹⁰⁷ , R ¹⁰⁸ , and R ¹⁰⁹ include the same groups as those described for R ¹⁰⁵ and R ¹⁰⁶ . ^Examples of the alkylene group for R ¹⁰⁸ and R ¹⁰⁹ include a methylene group, an ethylene group, a propylene group, a butylene group, and a hexylene group.

(In the formula, R ^101a and R ^101b are the same as described above.)

(In the formula, R ¹¹⁰ represents an arylene group having 6 to 10 carbon atoms, an alkylene group having 1 to 6 carbon atoms, or an alkenylene group having 2 to 6 carbon atoms, and some or all of the hydrogen atoms of these groups are further carbon atoms. It may be substituted with a linear or branched alkyl group or alkoxy group having 1 to 4 carbon atoms, a nitro group, an acetyl group, or a phenyl group, and R ¹¹¹ is a linear or branched chain having 1 to 8 carbon atoms. Or a substituted alkyl group, an alkenyl group or an alkoxyalkyl group, a phenyl group, or a naphthyl group, and part or all of the hydrogen atoms of these groups are further an alkyl group or alkoxy group having 1 to 4 carbon atoms; A phenyl group which may be substituted with an alkyl group of 4 to 4, an alkoxy group, a nitro group or an acetyl group; a heteroaromatic group having 3 to 5 carbon atoms; or a phenyl group which may be substituted with a chlorine atom or a fluorine atom.

Here, as the arylene group of R ¹¹⁰ , 1,2-phenylene group, 1,8-naphthylene group, etc., and as the alkylene group, methylene group, ethylene group, trimethylene group, tetramethylene group, phenylethylene group, norbornane Examples of the alkenylene group such as -2,3-diyl group include 1,2-vinylene group, 1-phenyl-1,2-vinylene group, 5-norbornene-2,3-diyl group and the like. The alkyl group for R ¹¹¹ is the same as R ^{101a to} R ^101c, and the alkenyl group is a vinyl group, 1-propenyl group, allyl group, 1-butenyl group, 3-butenyl group, isoprenyl group, 1- Pentenyl group, 3-pentenyl group, 4-pentenyl group, dimethylallyl group, 1-hexenyl group, 3-hexenyl group, 5-hexenyl group, 1-heptenyl group, 3-heptenyl group, 6-heptenyl group, 7-octenyl Groups such as alkoxyalkyl groups include methoxymethyl, ethoxymethyl, propoxymethyl, butoxymethyl, pentyloxymethyl, hexyloxymethyl, heptyloxymethyl, methoxyethyl, ethoxyethyl, Propoxyethyl, butoxyethyl, pentyloxyethyl, hexyloxyethyl, methoxypro Group, ethoxypropyl group, propoxypropyl group, butoxy propyl group, methoxybutyl group, ethoxybutyl group, propoxybutyl group, a methoxy pentyl group, an ethoxy pentyl group, a methoxy hexyl group, a methoxy heptyl group.

  In addition, examples of the optionally substituted alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a tert-butyl group. As the alkoxy group of ˜4, a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group, a tert-butoxy group and the like are an alkyl group having 1 to 4 carbon atoms, an alkoxy group, and a nitro group. As the phenyl group which may be substituted with an acetyl group, a phenyl group, a tolyl group, a p-tert-butoxyphenyl group, a p-acetylphenyl group, a p-nitrophenyl group, etc. Examples of the aromatic group include a pyridyl group and a furyl group.

Specific examples of the acid generator exemplified above include the following.
Examples of onium salts include tetramethylammonium trifluoromethanesulfonate, tetramethylammonium nonafluorobutanesulfonate, triethylammonium nonafluorobutanesulfonate, pyridinium nonafluorobutanesulfonate, triethylammonium camphorsulfonate, pyridinium camphorsulfonate, nona Tetra n-butylammonium fluorobutanesulfonate, tetraphenylammonium nonafluorobutanesulfonate, tetramethylammonium p-toluenesulfonate, diphenyliodonium trifluoromethanesulfonate, phenyliodonium trifluoromethanesulfonate (p-tert-butoxyphenyl) phenyliodonium, p-Toluenesulfonic acid diphenyliodonium, p-toluenesulfuric acid Acid (p-tert-butoxyphenyl) phenyliodonium, trifluoromethanesulfonic acid triphenylsulfonium, trifluoromethanesulfonic acid (p-tert-butoxyphenyl) diphenylsulfonium, trifluoromethanesulfonic acid bis (p-tert-butoxyphenyl) phenyl Sulfonium, tris (p-tert-butoxyphenyl) sulfonium trifluoromethanesulfonate, p-toluenesulfonic acid triphenylsulfonium, p-toluenesulfonic acid (p-tert-butoxyphenyl) diphenylsulfonium, p-toluenesulfonic acid bis (p -Tert-butoxyphenyl) phenylsulfonium, p-toluenesulfonic acid tris (p-tert-butoxyphenyl) sulfonium, nonaflu Tributanesulfonium tributanesulfonate, triphenylsulfonium butanesulfonate, trimethylsulfonium trifluoromethanesulfonate, trimethylsulfonium p-toluenesulfonate, cyclohexylmethyl trifluoromethanesulfonate (2-oxocyclohexyl) sulfonium, cyclohexyl p-toluenesulfonate Methyl (2-oxocyclohexyl) sulfonium, dimethylphenylsulfonium trifluoromethanesulfonate, dimethylphenylsulfonium p-toluenesulfonate, dicyclohexylphenylsulfonium trifluoromethanesulfonate, dicyclohexylphenylsulfonium p-toluenesulfonate, trinaphthylsulfonium trifluoromethanesulfonate , Trifluoromethane Sulfonic acid (2-norbornyl) methyl (2-oxocyclohexyl) sulfonium, ethylenebis [methyl (2-oxocyclopentyl) sulfonium trifluoromethanesulfonate], 1,2'-naphthylcarbonylmethyltetrahydrothiophenium triflate, triethylammonium Examples thereof include onium salts such as nonaflate, tributylammonium nonaflate, tetraethylammonium nonaflate, tetrabutylammonium nonaflate, triethylammonium bis (trifluoromethylsulfonyl) imide, triethylammonium tris (perfluoroethylsulfonyl) methide, and the like.

  Diazomethane derivatives include bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (xylenesulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (cyclopentylsulfonyl) diazomethane, bis (n-butylsulfonyl) diazomethane Bis (isobutylsulfonyl) diazomethane, bis (sec-butylsulfonyl) diazomethane, bis (n-propylsulfonyl) diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane, bis (n-amylsulfonyl) diazomethane Bis (isoamylsulfonyl) diazomethane, bis (sec-amylsulfonyl) diazomethane, bis (tert-amylsulfur) Nyl) diazomethane, 1-cyclohexylsulfonyl-1- (tert-butylsulfonyl) diazomethane, 1-cyclohexylsulfonyl-1- (tert-amylsulfonyl) diazomethane, 1-tert-amylsulfonyl-1- (tert-butylsulfonyl) diazomethane And the like.

  Examples of glyoxime derivatives include bis-O- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-O- (p-toluenesulfonyl) -α-diphenylglyoxime, bis-O- (p-toluenesulfonyl)- α-dicyclohexylglyoxime, bis-O- (p-toluenesulfonyl) -2,3-pentanedione glyoxime, bis-O- (p-toluenesulfonyl) -2-methyl-3,4-pentanedione glyoxime, Bis-O- (n-butanesulfonyl) -α-dimethylglyoxime, bis-O- (n-butanesulfonyl) -α-diphenylglyoxime, bis-O- (n-butanesulfonyl) -α-dicyclohexylglyoxime Bis-O- (n-butanesulfonyl) -2,3-pentanedione glyoxime, bis-O- ( -Butanesulfonyl) -2-methyl-3,4-pentanedione glyoxime, bis-O- (methanesulfonyl) -α-dimethylglyoxime, bis-O- (trifluoromethanesulfonyl) -α-dimethylglyoxime, bis -O- (1,1,1-trifluoroethanesulfonyl) -α-dimethylglyoxime, bis-O- (tert-butanesulfonyl) -α-dimethylglyoxime, bis-O- (perfluorooctanesulfonyl)- α-dimethylglyoxime, bis-O- (cyclohexanesulfonyl) -α-dimethylglyoxime, bis-O- (benzenesulfonyl) -α-dimethylglyoxime, bis-O- (p-fluorobenzenesulfonyl) -α- Dimethylglyoxime, bis-O- (p-tert-butylbenzenesulfonyl) α- dimethylglyoxime, bis -O- (xylene sulfonyl)-.alpha.-dimethylglyoxime, and bis -O- (camphorsulfonyl)-.alpha.-glyoxime derivatives such as dimethylglyoxime.

  Examples of bissulfone derivatives include bisnaphthylsulfonylmethane, bistrifluoromethylsulfonylmethane, bismethylsulfonylmethane, bisethylsulfonylmethane, bispropylsulfonylmethane, bisisopropylsulfonylmethane, bis-p-toluenesulfonylmethane, and bisbenzenesulfonylmethane. Bissulfone derivatives can be mentioned.

  Examples of β-ketosulfonic acid derivatives include β-ketosulfonic acid derivatives such as 2-cyclohexylcarbonyl-2- (p-toluenesulfonyl) propane and 2-isopropylcarbonyl-2- (p-toluenesulfonyl) propane.

  Examples of the disulfone derivative include disulfone derivatives such as diphenyldisulfone and dicyclohexyldisulfone.

  Examples of the nitrobenzyl sulfonate derivative include nitrobenzyl sulfonate derivatives such as 2,6-dinitrobenzyl p-toluenesulfonate and 2,4-dinitrobenzyl p-toluenesulfonate.

  Examples of sulfonic acid ester derivatives include 1,2,3-tris (methanesulfonyloxy) benzene, 1,2,3-tris (trifluoromethanesulfonyloxy) benzene, 1,2,3-tris (p-toluenesulfonyloxy). Mention may be made of sulfonic acid ester derivatives such as benzene.

  Examples of sulfonic acid ester derivatives of N-hydroxyimide compounds include N-hydroxysuccinimide methanesulfonic acid ester, N-hydroxysuccinimide trifluoromethanesulfonic acid ester, N-hydroxysuccinimide ethanesulfonic acid ester, N-hydroxysuccinimide 1-propanesulfonic acid. Ester, N-hydroxysuccinimide 2-propanesulfonic acid ester, N-hydroxysuccinimide 1-pentanesulfonic acid ester, N-hydroxysuccinimide 1-octanesulfonic acid ester, N-hydroxysuccinimide p-toluenesulfonic acid ester, N-hydroxysuccinimide p-methoxybenzenesulfonic acid ester, N-hydroxysuccinimide 2-chloroethanesulfonic acid ester N-hydroxysuccinimide benzenesulfonic acid ester, N-hydroxysuccinimide-2,4,6-trimethylbenzenesulfonic acid ester, N-hydroxysuccinimide 1-naphthalenesulfonic acid ester, N-hydroxysuccinimide 2-naphthalenesulfonic acid ester, N- Hydroxy-2-phenylsuccinimide methanesulfonate, N-hydroxymaleimide methanesulfonate, N-hydroxymaleimide ethanesulfonate, N-hydroxy-2-phenylmaleimide methanesulfonate, N-hydroxyglutarimide methanesulfonate Ester, N-hydroxyglutarimide benzenesulfonic acid ester, N-hydroxyphthalimide methanesulfonic acid ester, N-hydro Siphthalimidobenzenesulfonic acid ester, N-hydroxyphthalimide trifluoromethanesulfonic acid ester, N-hydroxyphthalimide p-toluenesulfonic acid ester, N-hydroxynaphthalimide methanesulfonic acid ester, N-hydroxynaphthalimide benzenesulfonic acid ester, N- Hydroxy-5-norbornene-2,3-dicarboximide methanesulfonate, N-hydroxy-5-norbornene-2,3-dicarboximide trifluoromethanesulfonate, N-hydroxy-5-norbornene-2,3 -Sulphonic acid ester derivatives of N-hydroxyimide compounds such as dicarboximide p-toluenesulfonic acid ester.

In particular, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium trifluoromethanesulfonate (p-tert-butoxyphenyl) diphenylsulfonium, tris (p-tert-butoxyphenyl) sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate, p -Toluenesulfonic acid (p-tert-butoxyphenyl) diphenylsulfonium, p-toluenesulfonic acid tris (p-tert-butoxyphenyl) sulfonium, trifluoromethanesulfonic acid trinaphthylsulfonium, trifluoromethanesulfonic acid cyclohexylmethyl (2-oxocyclohexyl) ) Sulfonium, (2-norbornyl) methyl (2-oxocyclohexyl) sulfonyl trifluoromethanesulfonate Onium salts such as 1,2′-naphthylcarbonylmethyltetrahydrothiophenium triflate, bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (n-butylsulfonyl) Diazomethane derivatives such as diazomethane, bis (isobutylsulfonyl) diazomethane, bis (sec-butylsulfonyl) diazomethane, bis (n-propylsulfonyl) diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane, bis-O -Glyoxime derivatives such as-(p-toluenesulfonyl) -α-dimethylglyoxime and bis-O- (n-butanesulfonyl) -α-dimethylglyoxime, bisnaphthyl Bissulfone derivatives such as sulfonylmethane, N-hydroxysuccinimide methanesulfonate, N-hydroxysuccinimide trifluoromethanesulfonate, N-hydroxysuccinimide 1-propanesulfonate, N-hydroxysuccinimide 2-propanesulfonate, N- Hydroxysuccinimide 1-pentanesulfonic acid ester, N-hydroxysuccinimide p-toluenesulfonic acid ester, N-hydroxynaphthalimide methanesulfonic acid ester, N-hydroxynaphthalimide benzenesulfonic acid ester, etc. Derivatives are preferably used.
In addition, the said acid generator can be used individually by 1 type or in combination of 2 or more types.

  The addition amount of the acid generator is preferably 0.1 to 50 parts, more preferably 0.5 to 40 parts with respect to 100 parts of the base polymer. If the amount is less than 0.1 part, the amount of acid generated is small and the crosslinking reaction may be insufficient. If the amount exceeds 50 parts, a mixing phenomenon may occur due to the acid moving to the upper resist.

Furthermore, the basic compound for improving storage stability can be mix | blended with the resist lower layer film forming material of this invention.
The basic compound serves as a quencher for the acid to prevent the acid generated in a trace amount from the acid generator during storage and the like from causing the crosslinking reaction to proceed.

  Examples of such basic compounds include primary, secondary, and tertiary aliphatic amines, hybrid amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxy group, and sulfonyl groups. A nitrogen-containing compound having a hydroxyl group, a nitrogen-containing compound having a hydroxyl group, a nitrogen-containing compound having a hydroxyphenyl group, an alcoholic nitrogen-containing compound, an amide derivative, an imide derivative, and the like.

  Specifically, primary aliphatic amines include ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert- Amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, etc. are exemplified as secondary aliphatic amines. Dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, disi Lopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N, N-dimethylmethylenediamine, N, N-dimethylethylenediamine, N, N-dimethyltetraethylenepenta The tertiary aliphatic amines are exemplified by trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, and tripentylamine. , Tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, Examples include cetylamine, N, N, N ′, N′-tetramethylmethylenediamine, N, N, N ′, N′-tetramethylethylenediamine, N, N, N ′, N′-tetramethyltetraethylenepentamine and the like. Is done.

  Examples of hybrid amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, and benzyldimethylamine.

  Specific examples of aromatic amines and heterocyclic amines include aniline derivatives (eg, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N, N-dimethylaniline, 2-methylaniline, 3- Methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5- Dinitroaniline, N, N-dimethyltoluidine, etc.), diphenyl (p-tolyl) amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (eg pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dim Lupyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, etc.), oxazole derivatives (eg oxazole, isoxazole etc.), thiazole derivatives (eg thiazole, isothiazole etc.), imidazole derivatives (eg imidazole, 4-methylimidazole, 4 -Methyl-2-phenylimidazole, etc.), pyrazole derivatives, furazane derivatives, pyrroline derivatives (eg pyrroline, 2-methyl-1-pyrroline etc.), pyrrolidine derivatives (eg pyrrolidine, N-methylpyrrolidine, pyrrolidinone, N-methylpyrrolidone etc.) ), Imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (eg pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4- (1-butylpentyl) pyridine, dimethyl) Lysine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridone, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2- (1-ethylpropyl) pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine Derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoline derivatives, quinoline derivatives (eg quinoline, 3-quinoline carbo Nitriles), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine Examples include derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives and the like.

  Furthermore, examples of the nitrogen-containing compound having a carboxy group include aminobenzoic acid, indolecarboxylic acid, amino acid derivatives (for example, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine. , Phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine) and the like, and examples of the nitrogen-containing compound having a sulfonyl group include 3-pyridinesulfonic acid, pyridinium p-toluenesulfonate, and the like. Nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, and alcoholic nitrogen-containing compounds include 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, and 3-indolemethanol. Drate, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N, N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol 4-amino-1-butanol, 4- (2-hydroxyethyl) morpholine, 2- (2-hydroxyethyl) pyridine, 1- (2-hydroxyethyl) piperazine, 1- [2- (2-hydroxyethoxy) Ethyl] piperazine, piperidineethanol, 1- (2-hydroxyethyl) pyrrolidine, 1- (2-hydroxyethyl) -2-pyrrolidinone, 3-piperidino-1,2-propanediol, 3-pyrrolidino-1,2-propane Diol, 8-hydroxyuroli , 3-cuincridinol, 3-tropanol, 1-methyl-2-pyrrolidineethanol, 1-aziridineethanol, N- (2-hydroxyethyl) phthalimide, N- (2-hydroxyethyl) isonicotinamide, etc. Illustrated.

Examples of amide derivatives include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, propionamide, benzamide and the like.
Examples of imide derivatives include phthalimide, succinimide, maleimide and the like.

  The compounding amount of the basic compound is suitably 0.001 to 2 parts, particularly 0.01 to 1 part, relative to 100 parts of the base polymer. If the blending amount is less than 0.001 part, the blending effect is small, and if it exceeds 2 parts, all of the acid generated by heat may be trapped and not crosslinked.

  The organic solvent that can be used in the resist underlayer film forming material of the present invention is not particularly limited as long as it dissolves the base polymer, acid generator, crosslinking agent, and other additives. Specific examples thereof include ketones such as cyclohexanone and methyl-2-amyl ketone; 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol and the like. Alcohols; ethers such as propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether; propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, ethyl lactate, Ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate , Tert-butyl acetate, tert-butyl propionate, propylene glycol monomethyl ether acetate, propylene glycol mono tert-butyl ether acetate and the like, and one or more of these can be used in combination. It is not limited. Among these organic solvents, diethylene glycol dimethyl ether, 1-ethoxy-2-propanol, ethyl lactate, propylene glycol monomethyl ether acetate and mixed solvents thereof are preferably used in the resist underlayer film forming material of the present invention.

  The blending amount of the organic solvent is preferably 200 to 10,000 parts, more preferably 300 to 5,000 parts, with respect to 100 parts of the base polymer.

  Furthermore, the present invention is a method for forming a pattern on a substrate by lithography, wherein at least a resist underlayer film forming material of the present invention is used to form a resist underlayer film on the substrate, and a photo is formed on the underlayer film. Form a resist upper layer film of a resist composition to form a multilayer resist film, and after exposing the pattern circuit region of the multilayer resist film, develop with a developer to form a resist pattern on the resist upper layer film, and the pattern is formed A pattern forming method is provided, wherein a resist underlayer film is etched using the formed resist upper layer mask as a mask, and a substrate is etched using a multilayer resist film having a pattern formed as a mask to form a pattern on the substrate. To do.

  In this case, a photoresist underlayer film forming material is applied on the substrate to be processed, an intermediate layer containing silicon atoms is applied on the obtained underlayer film, and a layer of the photoresist composition is formed on the intermediate layer. Apply, irradiate the desired area of this photoresist layer with radiation, develop with a developing solution to form a photoresist pattern, and process the intermediate film layer with this photoresist pattern layer as a mask with a dry etching device, After removing the resist pattern layer, the lower film layer and then the substrate to be processed can be processed using the processed intermediate film layer as a mask.

Hereinafter, the pattern forming method of the present invention will be described with reference to FIGS.
FIG. 6 is an explanatory diagram of the two-layer resist processing process, and FIG. 7 is an explanatory diagram of the three-layer resist processing process.
The substrate 11 to be processed may be composed of a layer to be processed 11a and a base layer 11b, as shown. The base layer 11b of the substrate 11 is not particularly limited, and Si, amorphous silicon (α-Si), p-Si, SiO ₂ , SiN, SiON, W, TiN, Al, etc. Different materials may be used. The layer to be processed _{11a, Si, SiO 2, SiON} , SiN, p-Si, α-Si, W, W-Si, Al, Cu, Al-Si , etc. and various low dielectric films and etching stopper film It is usually used and can be formed to a thickness of 50 to 10,000 nm, particularly 100 to 5,000 nm.

  First, the two-layer resist processing process shown in FIG. 6 will be described. The resist underlayer film 12 can be formed on the substrate 11 by a spin coat method or the like in the same manner as a normal photoresist film formation method. After the resist underlayer film 12 is formed by a spin coating method or the like, it is desirable to evaporate the organic solvent and perform baking to promote the crosslinking reaction in order to prevent mixing with the resist upper layer film 13. The baking temperature is preferably in the range of 80 to 300 ° C. and in the range of 10 to 300 seconds. Although the thickness of the resist underlayer film 12 is appropriately selected, it is preferably 100 to 20,000 nm, particularly 150 to 15,000 nm. After the resist lower layer film 12 is formed, a resist upper layer film 13 is formed thereon (see FIG. 6A).

In this case, a known composition can be used as the photoresist composition for forming the resist upper layer film 13. From the point of oxygen gas etching resistance, etc., using a silicon atom-containing polymer such as a polysilsesquioxane derivative or vinylsilane derivative as a base polymer, and a positive type containing an organic solvent, an acid generator, and a basic compound if necessary The photoresist composition is used. In addition, as a silicon atom containing polymer, the well-known polymer used for this kind of resist composition can be used.
The thickness of the resist upper layer film 13 is not particularly limited, but is preferably 30 to 500 nm, particularly 50 to 400 nm.

When forming the resist upper layer film 13 with the said photoresist composition, a spin coat method etc. are used preferably similarly to the case where the said resist lower layer film is formed. Pre-baking is performed after the resist upper layer film 13 is formed by spin coating or the like, but it is preferably performed at 80 to 180 ° C. for 10 to 300 seconds.
Thereafter, the pattern circuit region of the multilayer resist film is exposed according to a conventional method (see FIG. 6B), post-exposure baking (PEB), and development is performed to obtain a resist pattern (see FIG. 6C). ). In FIG. 6B, 13 ′ is an exposed portion.

  For the development, a paddle method using an alkaline aqueous solution, a dip method, or the like is used, and in particular, a paddle method using a 2.38% by mass aqueous solution of tetramethylammonium hydroxide is preferably used. Then, the substrate is rinsed with pure water and dried by spin drying or nitrogen blowing.

Next, the resist lower layer film 12 is etched by dry etching mainly using oxygen gas using the resist upper layer film 13 on which the resist pattern is formed as a mask (see FIG. 6D). This etching can be performed by a conventional method. In the case of dry etching mainly using oxygen gas, in addition to oxygen gas, it is also possible to add inert gas such as He and Ar, and CO, CO ₂ , NH ₃ , SO ₂ , N ₂ and NO ₂ gas. is there. In particular, the latter gas is used for side wall protection for preventing undercut of the pattern side wall.

Etching of the next substrate 11 can also be performed by a conventional method. For example, if the substrate is SiO ₂ or SiN, etching mainly using a chlorofluorocarbon gas, polysilicon (p-Si), Al, or W is chlorine, Etching mainly using bromine-based gas is performed (see FIG. 6E). The resist underlayer film of the present invention is characterized by excellent etching resistance when etching these substrates. At this time, if necessary, the resist upper layer film may be removed and then the substrate may be etched, or the substrate may be etched while leaving the resist upper layer film as it is.

In the case of the three-layer resist processing process, as shown in FIG. 7, an intermediate layer 14 containing silicon atoms is interposed between the resist lower layer film 12 and the resist upper layer film 13 (see FIG. 7A). In this case, the material for forming the intermediate layer 14 may be a film made by spin coating such as a silicone polymer based on polysilsesquioxane or tetraorthosilicate glass (TEOS), or SiO produced by CVD. ₂ , SiN, SiON films can be used.
The thickness of the intermediate layer 14 is preferably 10 to 1,000 nm.
The other configuration is the same as that of the two-layer resist processing process of FIG.

Next, a resist pattern is formed in the same manner as in FIG. 6 (see FIGS. 7B and 7C).
Next, the intermediate layer 14 is etched by dry etching mainly using chlorofluorocarbon gas, using the resist upper layer film 13 on which the resist pattern is formed as a mask (see FIG. 7D). This etching can be performed by a conventional method. In the case of dry etching mainly using a chlorofluorocarbon gas, CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F _{10 and the} like can be generally used.

Further, after the intermediate layer 14 is etched, the resist lower layer film is etched by dry etching mainly composed of O ₂ or H ₂ (see FIG. 7E). In this case, in addition to O ₂ and H ₂ gases, inert gases such as He and Ar, and CO, CO ₂ , NH ₃ , SO ₂ , N ₂ and NO ₂ gases can be added. In particular, the latter gas is used for side wall protection for preventing undercut of the pattern side wall.

Etching of the next substrate 11 can also be performed by a conventional method. Similarly to the case of FIG. 6, for example, if the substrate is SiO ₂ or SiN, etching mainly using a fluorocarbon gas, polysilicon (p-Si) Etching mainly using chlorine-based or bromine-based gas is performed for Al and W (see FIG. 7F). The resist underlayer film of the present invention is characterized by excellent etching resistance when etching these substrates. At this time, if necessary, the resist upper layer film may be removed and then the substrate may be etched, or the substrate may be etched while leaving the resist upper layer film as it is.

EXAMPLES Hereinafter, although a synthesis example, a comparative synthesis example, an Example, and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited by these description.
In the following examples, the weight average molecular weight Mw and the number average molecular weight Mn are measured values based on polystyrene by gel permeation chromatography (GPC).

[Synthesis Example 1]
58.0 g of tetracyclo 8- (1′-ethylcyclopentoxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene and 489.0 g of tetrahydrofuran were mixed under nitrogen. To this, 1,038 mg of 1,5-hexadiene and 786 mg of Mo (N-2,6-iPr ₂ C ₆ H ₃ ) (CHCMe ₃ ) (OC (CF ₃ ) ₂ Me) ₂ (where iPr is an isopropyl group) , Me is a methyl group, the same applies hereinafter), and the mixture was allowed to react at room temperature for 2 hours with stirring, and then 404 mg of butyraldehyde was added and further stirred for 30 minutes to stop the reaction. This reaction mixture was added dropwise to a large excess of methanol, and the precipitated solid was filtered, further washed with methanol, and vacuum dried to obtain a ring-opening metathesis polymer powder.
This polymer is referred to as polymer 1.

[Synthesis Example 2]
37.0 g of ring-opening metathesis polymer powder of polymer 1, 350.0 g of tetrahydrofuran and 20 mg of chlorohydridocarbonyltris (triphenylphosphine) ruthenium were mixed. The reaction mixture was reacted at a hydrogen pressure of 6.0 MPa and 100 ° C. for 20 hours, then cooled to room temperature, hydrogen was removed, and the reaction was stopped. This was dropped into a large excess of methanol, and the precipitated solid was filtered, washed with methanol, and vacuum dried to obtain a ring-opening metathesis polymer hydrogenated powder.
This polymer is designated as Polymer 2.

[Synthesis Example 3]
29.0 g of tetracyclo 8- (1′-ethylcyclopentoxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene, 16 g of tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene and 489.0 g of tetrahydrofuran were mixed under nitrogen. To this, 1,038 mg of 1,5-hexadiene and 786 mg of Mo (N-2,6-iPr ₂ C ₆ H ₃ ) (CHCMe ₃ ) (OC (CF ₃ ) ₂ Me) ₂ are added and stirred at room temperature. Then, 404 mg of butyraldehyde was added and the mixture was further stirred for 30 minutes to stop the reaction. This reaction mixture was added dropwise to a large excess of methanol, and the precipitated solid was filtered, further washed with methanol, and vacuum dried to obtain a ring-opening metathesis polymer powder.
This polymer is designated as Polymer 3.

[Synthesis Example 4]
37.0 g of ring-opening metathesis polymer powder of polymer 3, 350.0 g of tetrahydrofuran and 20 mg of chlorohydridocarbonyltris (triphenylphosphine) ruthenium were mixed. The reaction mixture was reacted at a hydrogen pressure of 6.0 MPa and 100 ° C. for 20 hours, then cooled to room temperature, hydrogen was removed, and the reaction was stopped. This was dropped into a large excess of methanol, and the precipitated solid was filtered, washed with methanol, and vacuum dried to obtain a ring-opening metathesis polymer hydrogenated powder.
This polymer is designated as polymer 4.

[Synthesis Example 5]
29.0 g of tetracyclo 8- (1′-trimethylsiloxymethyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene, 16 g of tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene and 489.0 g of tetrahydrofuran were mixed under nitrogen. To this, 1,038 mg of 1,5-hexadiene and 786 mg of Mo (N-2,6-iPr ₂ C ₆ H ₃ ) (CHCMe ₃ ) (OC (CF ₃ ) ₂ Me) ₂ are added and stirred at room temperature. Then, 404 mg of butyraldehyde was added and the mixture was further stirred for 30 minutes to stop the reaction. This reaction mixture was added dropwise to a large excess of methanol, and the precipitated solid was filtered, further washed with methanol, and vacuum dried to obtain a ring-opening metathesis polymer powder.
This polymer is designated as polymer 5.

[Synthesis Example 6]
37.0 g of ring-opening metathesis polymer powder of polymer 5, 350.0 g of tetrahydrofuran and 20 mg of chlorohydridocarbonyltris (triphenylphosphine) ruthenium were mixed. The reaction mixture was reacted at a hydrogen pressure of 6.0 MPa and 100 ° C. for 20 hours, then cooled to room temperature, hydrogen was removed, and the reaction was stopped. This was dropped into a large excess of methanol, and the precipitated solid was filtered, washed with methanol, and vacuum dried to obtain a ring-opening metathesis polymer hydrogenated powder.
This polymer is designated as polymer 6.

[Synthesis Example 7]
Polymer 1 was dissolved in 200 mL of methyl ethyl ketone, 1 g of methanesulfonic acid and 5 g of water were added, the ethylcyclopentyl group was deprotected at 60 ° C. for 5 hours, and liquid separation washing was performed 3 times with 500 mL of water. The reaction solution was concentrated and then dissolved in 100 mL of acetone, followed by precipitation, filtration and drying at 60 ° C. as described above to obtain a white polymer.
This polymer is designated as polymer 7.

[Synthesis Example 8]
Polymer 2 was dissolved in 200 mL of methyl ethyl ketone, 1 g of methanesulfonic acid and 5 g of water were added, the ethylcyclopentyl group was deprotected at 60 ° C. for 5 hours, and liquid separation washing was performed 3 times with 500 mL of water. The reaction solution was concentrated and then dissolved in 100 mL of acetone, followed by precipitation, filtration and drying at 60 ° C. as described above to obtain a white polymer.
This polymer is designated as polymer 8.

[Synthesis Example 9]
Polymer 3 was dissolved in 200 mL of methyl ethyl ketone, 1 g of methanesulfonic acid and 5 g of water were added, the ethylcyclopentyl group was deprotected at 60 ° C. for 5 hours, and liquid separation washing was performed 3 times with 500 mL of water. The reaction solution was concentrated and then dissolved in 100 mL of acetone, followed by precipitation, filtration and drying at 60 ° C. as described above to obtain a white polymer.
This polymer is designated as polymer 9.

[Synthesis Example 10]
Polymer 4 was dissolved in 200 mL of methyl ethyl ketone, 1 g of methanesulfonic acid and 5 g of water were added, the ethylcyclopentyl group was deprotected at 60 ° C. for 5 hours, and liquid separation washing was performed 3 times with 500 mL of water. The reaction solution was concentrated and then dissolved in 100 mL of acetone, followed by precipitation, filtration and drying at 60 ° C. as described above to obtain a white polymer.
This polymer is designated as polymer 10.

[Synthesis Example 11]
Polymer 5 was dissolved in 200 mL of methyl ethyl ketone, 1 g of methanesulfonic acid and 5 g of water were added, the ethylcyclopentyl group was deprotected at 60 ° C. for 5 hours, and liquid separation washing was performed 3 times with 500 mL of water. The reaction solution was concentrated and then dissolved in 100 mL of acetone, followed by precipitation, filtration and drying at 60 ° C. as described above to obtain a white polymer.
This polymer is designated as polymer 11.

[Synthesis Example 12]
Polymer 6 was dissolved in 200 mL of methyl ethyl ketone, 1 g of methanesulfonic acid and 5 g of water were added, the ethylcyclopentyl group was deprotected at 60 ° C. for 5 hours, and liquid separation washing was performed 3 times with 500 mL of water. The reaction solution was concentrated and then dissolved in 100 mL of acetone, followed by precipitation, filtration and drying at 60 ° C. as described above to obtain a white polymer.
This polymer is designated as polymer 12.

[Comparative Synthesis Example 1]
To a 500 mL flask, 40 g of 4-hydroxystyrene, 160 g of 2-methacrylic acid-1-adamantane, and 40 g of toluene as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 4.1 g of AIBN was added as a polymerization initiator, and the temperature was raised to 80 ° C. and reacted for 24 hours. This reaction solution was concentrated to 1/2, precipitated in a mixed solution of 300 mL of methanol and 50 mL of water, and the obtained white solid was filtered and dried under reduced pressure at 60 ° C. to obtain 188 g of a white polymer.
When the obtained polymer was measured by ¹ H-NMR and GPC, the following analysis results were obtained.
Copolymer composition ratio (molar ratio)
4-hydroxystyrene: 2-methacrylic acid-1-adamantane = 0.32: 0.68
Weight average molecular weight (Mw) = 10,900
Molecular weight distribution (Mw / Mn) = 1.77
This polymer is referred to as comparative polymer 1.

[Examples and Comparative Examples]
[Preparation of resist underlayer film forming material]
Resin represented by the above polymers 7 to 12, resin represented by the comparative polymer 1, the following blend oligomer 1, blend phenol low nucleus 1 to 3, blend polymer 1 and 2, acid generator represented by the following AG1 and 2, The cross-linking agent represented by CR1 and CR2 is dissolved in an organic solvent containing 0.1% by mass of FC-430 (manufactured by Sumitomo 3M) at a ratio shown in Table 1 and filtered through a filter made of 0.1 μm fluororesin. Thus, resist underlayer film forming materials (Examples 1 to 12, Comparative Example 1) were prepared.
Polymers 7 to 12: Polymers obtained in Synthesis Examples 7 to 12 Comparative polymer 1: Polymer obtained in Comparative Synthesis Example 1

Blend oligomer 1, Blend polymer 1, 2 (see the following structural formula)

Blended phenol low-nuclei 1 to 3 (see the structural formula below)

Acid generator: AG1, 2 (see structural formula below)

Cross-linking agent: CR1, 2 (see structural formula below)

Organic solvent: PGMEA (propylene glycol monomethyl ether acetate)

The resist underlayer film forming materials (Examples 1 to 12 and Comparative Example 1) prepared above were applied on a silicon substrate and baked at 230 ° C. for 60 seconds to form resist underlayer films each having a thickness of 300 nm. .
After formation of the resist underlayer film, J.P. A. The refractive index (n, k) at a wavelength of 193 nm was determined using a spectroscopic ellipsometer (VASE) with variable incident angle from Woollam, and the results are shown in Table 1.

  As shown in Table 1, in Examples 1 to 12, the n value of the refractive index of the resist underlayer film is in the range of 1.6 to 1.7, and the k value is in the range of 0.13 to 0.30, particularly 200 nm. It can be seen that the film has the optimum refractive index (n) and extinction coefficient (k) that can exhibit a sufficient antireflection effect with the above thickness.

Next, a dry etching resistance test was performed. First, the same lower layer films (Examples 1 to 12 and Comparative Example 1) used for the refractive index measurement were prepared, and the etching test of these lower layer films with CF ₄ / CHF ₃ gas was performed as follows (1 ). In this case, the difference in film thickness between the lower layer film and the resist before and after etching was measured using a dry etching apparatus TE-8500P manufactured by Tokyo Electron Ltd. The results are shown in Table 2.
(1) Etching test with CF ₄ / CHF ₃ gas Etching conditions are as shown below.
Chamber pressure 40.0Pa
RF power 1,000W
Gearup 9mm
CHF ₃ gas flow rate 30ml / min
CF ₄ gas flow rate 30ml / min
Ar gas flow rate 100ml / min
60 sec

Further, using the lower layer films (Examples 1 to 12, Comparative Example 1), an etching test with a Cl ₂ / BCl ₃ gas was performed under the condition (2) below. In this case, the thickness difference of the polymer film before and after etching was determined using a dry etching apparatus L-507D-L manufactured by Nidec Anelva. The results are shown in Table 3.
(2) Etching test with Cl ₂ / BCl ₃ gas Etching conditions are as shown below.
Chamber pressure 40.0Pa
RF power 300W
Gearup 9mm
Cl ₂ gas flow rate 30ml / min
BCl ₃ gas flow rate 30ml / min
CHF ₃ gas flow rate 100ml / min
O ₂ gas flow rate 2ml / min
60 sec

[Preparation of resist upper layer film material]
ArF single-layer resist material (SL resist for ArF) having the composition shown in Table 4 was dissolved in an organic solvent containing 0.1% by mass of FC-430 (manufactured by Sumitomo 3M) at a ratio shown in Table 4, and 0.1 μm An ArF single layer resist material was prepared by filtering through a filter made of fluororesin.

An ArF silicon-containing intermediate layer material having the composition shown in Table 5 was dissolved in an organic solvent containing 0.1% by mass of FC-430 (manufactured by Sumitomo 3M) at a ratio shown in Table 5 and made of 0.1 μm fluororesin. An ArF silicon-containing interlayer material was prepared by filtering through a filter.

A solution of the lower layer film forming material (Examples 1 to 12, Comparative Example 1) was applied onto a 300 nm thick SiO ₂ substrate and baked at 230 ° C. for 60 seconds to form a lower layer film having a thickness of 300 nm.
A silicon-containing intermediate layer material solution SOG is applied thereon and baked at 200 ° C. for 60 seconds to form a 90 nm-thick intermediate layer, and an ArF single layer resist material solution is applied and baked at 110 ° C. for 60 seconds. A photoresist layer having a thickness of 160 nm was formed.
Next, exposure was performed with an ArF exposure apparatus (manufactured by Nikon Corporation; S307E, NA 0.85, σ 0.93, 2/3 ring illumination, Cr mask), baked at 110 ° C. for 60 seconds (PEB), and 2.38. Development was performed with a mass% tetramethylammonium hydroxide (TMAH) aqueous solution for 60 seconds to obtain a positive pattern. The pattern shape of 80 nm line and space of the obtained pattern was observed. The results are shown in Table 6.

Next, the resist pattern obtained after the ArF exposure and development was transferred to the SOG film under the following conditions. Etching conditions (3) are as shown below.
Chamber pressure 40.0Pa
RF power 1,000W
Gearup 9mm
CHF ₃ gas flow rate 20ml / min
CF ₄ gas flow rate 60ml / min
Ar gas flow rate 200ml / min
Time 30sec

Next, the pattern transferred to the SOG film was transferred to the lower layer film by etching mainly composed of the following oxygen gas. Etching conditions (4) are as shown below.
Chamber pressure 60.0Pa
RF power 600W
N ₂ gas flow rate 60ml / min
O ₂ gas flow rate 10ml / min
Gearup 9mm
Time 20sec

Finally, the SiO ₂ substrate was processed using the lower layer film pattern as a mask under the etching conditions shown in (1).
The cross sections of the patterns were observed with an electron microscope (S-4700) manufactured by Hitachi, Ltd., and the shapes were compared and summarized in Table 6.

As shown in Tables 2 and 3, the etching rate of the CF ₄ / CHF ₃ gas and the Cl ₂ / BCl ₃ gas of the lower layer film of the present invention is sufficiently slower than that of Comparative Example 1. As shown in Table 6, it was recognized that the resist shape after development, the shape of the lower layer film after etching the substrate, and the substrate processing etching were also good.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

It is a graph which shows the relationship between the film thickness of the lower layer film | membrane which changed the n value in the range of 1.0-2.0, and the board | substrate reflectance with the lower layer film refractive index k value in 0.3 layer being fixed. It is a graph which shows the relationship between the film thickness of a lower layer film | membrane which changed the k value in the range of 0.1-1.0, and the board | substrate reflectance with the lower layer film refractive index n value in 2 layer process being fixed to 1.5. In the three-layer process, the lower layer refractive index n value is 1.5, the k value is 0.6, the film thickness is fixed to 500 nm, the n value of the intermediate layer is 1.5, the k value is 0 to 0.3, and the film thickness is It is a graph which shows the relationship of a board | substrate reflectance when it changes in the range of 0-400 nm. In the three-layer process, the refractive index n value of the lower layer film is 1.5, the k value is 0.2, the n value of the intermediate layer is 1.5, and the k value is fixed at 0.1 to change the film thickness of the lower layer and the intermediate layer. It is a graph which shows the relationship of the board | substrate reflectance at the time. In the three-layer process, the refractive index n value of the lower layer film is 1.5, the k value is 0.6, the n value of the intermediate layer is 1.5, and the k value is fixed at 0.1 to change the film thickness of the lower layer and the intermediate layer. It is a graph which shows the relationship of the board | substrate reflectance at the time. It is explanatory drawing of a two-layer resist processing process. It is explanatory drawing of a 3 layer resist processing process.

Explanation of symbols

11 Substrate 11a Processed layer 11b Base layer 12 Lower layer film 13 Upper layer film 13 'Exposed portion 14 Intermediate layer

Claims (6)

A photoresist underlayer film-forming material comprising a polymer having a repeating unit represented by the following general formula (1).

(In the general formula (1), R ^{1 to} R ⁴ are the same or different hydrogen atoms, linear, branched or cyclic alkyl groups having 1 to 20 carbon atoms, —R ⁵ — (COOR ⁶ ) _{p, respectively.} , or -R ⁷ - (oR ⁸⁾ is a _q .R ⁵ represents a single bond or a (p + 1) -valent straight, branched or cyclic hydrocarbon group, an ester group, an ether group R ⁷ is a single bond or a (q + 1) -valent straight-chain, branched or cyclic hydrocarbon group having 1 to 20 carbon atoms, an ester group, an ether group or a hydroxy group. P and q are integers of 1 to 3, but when R ⁵ and R ⁷ are single bonds, p and q are each 1. R ⁶ and R ⁸ are hydrogen atoms, Or it is a C1-C20 linear, branched or cyclic alkyl group, and may have a carbonyl group or an ether group. R ¹ to R at least one of ⁴ -R ⁵ - (COOR ⁶⁾ _p or -R ⁷ - (OR ⁸⁾ is _q, at least one labile hydrogen atom or an acid of this R ^6, R ⁸ X is a methylene group, oxygen atom or sulfur atom, n and m are positive numbers from 0 to 5, and (a-1) and (a-2) are 0 ≦ (a-1), respectively. ) ≦ 1.0, 0 ≦ (a−2) ≦ 1.0, and 0 <(a−1) + (a−2) ≦ 1.   The resist underlayer film forming material according to claim 1, further comprising at least one of an organic solvent, an acid generator, and a crosslinking agent.   3. The photoresist underlayer film forming material according to claim 1 or 2 is applied on a substrate to be processed, a layer of a photoresist composition is applied on the obtained underlayer film, and radiation is applied to a desired region of the photoresist layer. And developing with a developing solution to form a photoresist pattern, and then processing the photoresist underlayer film layer and the substrate to be processed using the photoresist pattern layer as a mask in a dry etching apparatus. Forming method.   The dry etching which a photoresist composition contains a silicon atom containing polymer and processes a photoresist lower layer film | membrane using a photoresist layer as a mask is performed using the etching gas which mainly has oxygen gas or hydrogen gas. Pattern forming method.   3. The photoresist underlayer film-forming material according to claim 1 or 2 is applied on a substrate to be processed, an intermediate layer containing silicon atoms is applied on the obtained underlayer film, and a photoresist is formed on the intermediate layer. Apply a layer of the composition, irradiate a desired area of the photoresist layer, develop with a developer to form a photoresist pattern, and then use the photoresist pattern layer as a mask with a dry etching apparatus as an intermediate film layer The pattern forming method is characterized in that after removing the photoresist pattern layer, the lower film layer and then the substrate to be processed are processed using the processed intermediate film layer as a mask.   6. The dry etching for processing a lower layer film using a photoresist composition containing a polymer containing no silicon atom and using the intermediate layer film as a mask, using an etching gas mainly composed of oxygen gas or hydrogen gas. Pattern forming method.