JP2008025017A - 真空プロセス用装置 - Google Patents
真空プロセス用装置 Download PDFInfo
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- JP2008025017A JP2008025017A JP2006202634A JP2006202634A JP2008025017A JP 2008025017 A JP2008025017 A JP 2008025017A JP 2006202634 A JP2006202634 A JP 2006202634A JP 2006202634 A JP2006202634 A JP 2006202634A JP 2008025017 A JP2008025017 A JP 2008025017A
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- substrate
- laser
- heating
- chamber
- light
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】 真空チャンバー内にて、基板を加熱しながら蒸着する真空プロセス用装置であって、前記チャンバーの一部に光透過性窓が形成されており、当該光透過性窓と前記基板を保持する保持部とを、チャンバー内の他の箇所と隔絶した直線状空間にて繋ぎ、前記光透過性窓の外側にレーザー発振装置を配置し、レーザー発振装置から、前記直線状空間を通って前記基板にレーザー光を照射して加熱する真空プロセス用装置とする。
【選択図】 図1
Description
また、上部強化ガラス板(3)の上面は、反射防止膜(2)が設けてある。
このような構造により、伸縮ネジ柱(23)の伸縮により、下部フレーム(24)を昇降することが可能である。
前記チャンバー(1)内に、各種の蒸気を導入する蒸発器出口(8)が設置されている。
(2) 反射防止膜
(3) 上部強化ガラス板
(4) 下部強化ガラス板
(5) 取り付けフランジ
(6) 窓
(7) 曇り防止用ガス導入口
(8) 蒸発器出口
(10) 円筒
(11) ステー
(20) 基板昇降装置
(21) 上部フレーム
(22) 案内柱
(23) 伸縮ネジ柱
(24) 下部フレーム
(30) 保持部
(R) レーザー発信器
(P) 基板
(X) 直線状空間
Claims (2)
- 真空チャンバー内にて、基板を加熱しながら蒸着する真空プロセス用装置であって、前記チャンバーの一部に光透過性窓が形成されており、当該光透過性窓と前記基板を保持する保持部とを、チャンバー内の他の箇所と隔絶した直線状空間にて繋ぎ、前記光透過性窓の外側にレーザー発振装置を配置し、レーザー発振装置から、前記直線状空間を通って前記基板にレーザー光を照射して加熱することを特徴とする真空プロセス用装置。
- 直線状空間は、光透過性窓の内側面と保持部とを繋ぐ筒状体にて形成してあることを特徴とする請求項1記載の真空プロセス用装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006202634A JP4505553B2 (ja) | 2006-07-25 | 2006-07-25 | 真空プロセス用装置 |
PCT/JP2007/051718 WO2008012956A1 (fr) | 2006-07-25 | 2007-02-01 | Dispositif pour un traitement sous vide |
US12/309,533 US8377211B2 (en) | 2006-07-25 | 2007-02-01 | Device for vacuum processing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006202634A JP4505553B2 (ja) | 2006-07-25 | 2006-07-25 | 真空プロセス用装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008025017A true JP2008025017A (ja) | 2008-02-07 |
JP4505553B2 JP4505553B2 (ja) | 2010-07-21 |
Family
ID=38981273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006202634A Expired - Fee Related JP4505553B2 (ja) | 2006-07-25 | 2006-07-25 | 真空プロセス用装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8377211B2 (ja) |
JP (1) | JP4505553B2 (ja) |
WO (1) | WO2008012956A1 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03268443A (ja) | 1990-03-19 | 1991-11-29 | Fujitsu Ltd | 半導体評価装置 |
JP3268443B2 (ja) | 1998-09-11 | 2002-03-25 | 科学技術振興事業団 | レーザ加熱装置 |
JP4101570B2 (ja) * | 2002-07-04 | 2008-06-18 | 新明和工業株式会社 | 成膜装置 |
-
2006
- 2006-07-25 JP JP2006202634A patent/JP4505553B2/ja not_active Expired - Fee Related
-
2007
- 2007-02-01 US US12/309,533 patent/US8377211B2/en not_active Expired - Fee Related
- 2007-02-01 WO PCT/JP2007/051718 patent/WO2008012956A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20100058987A1 (en) | 2010-03-11 |
JP4505553B2 (ja) | 2010-07-21 |
US8377211B2 (en) | 2013-02-19 |
WO2008012956A1 (fr) | 2008-01-31 |
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