JP2008009425A - 液晶表示装置及び電子機器 - Google Patents
液晶表示装置及び電子機器 Download PDFInfo
- Publication number
- JP2008009425A JP2008009425A JP2007147258A JP2007147258A JP2008009425A JP 2008009425 A JP2008009425 A JP 2008009425A JP 2007147258 A JP2007147258 A JP 2007147258A JP 2007147258 A JP2007147258 A JP 2007147258A JP 2008009425 A JP2008009425 A JP 2008009425A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- liquid crystal
- film
- substrate
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 902
- 239000004065 semiconductor Substances 0.000 claims abstract description 223
- 239000000758 substrate Substances 0.000 claims description 487
- 230000005684 electric field Effects 0.000 claims description 43
- 238000000034 method Methods 0.000 abstract description 73
- 230000008569 process Effects 0.000 abstract description 47
- 238000004519 manufacturing process Methods 0.000 abstract description 42
- 239000010408 film Substances 0.000 description 1249
- 239000010410 layer Substances 0.000 description 411
- 239000012535 impurity Substances 0.000 description 249
- 230000002829 reductive effect Effects 0.000 description 61
- 239000010936 titanium Substances 0.000 description 52
- 229910052782 aluminium Inorganic materials 0.000 description 48
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 48
- 239000010949 copper Substances 0.000 description 48
- 239000000463 material Substances 0.000 description 45
- 230000006870 function Effects 0.000 description 43
- 238000010586 diagram Methods 0.000 description 42
- 230000015572 biosynthetic process Effects 0.000 description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 239000003990 capacitor Substances 0.000 description 33
- 229910052710 silicon Inorganic materials 0.000 description 33
- 239000010703 silicon Substances 0.000 description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 32
- 229910052802 copper Inorganic materials 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 28
- 229910052814 silicon oxide Inorganic materials 0.000 description 28
- 229910052719 titanium Inorganic materials 0.000 description 28
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 24
- 239000011651 chromium Substances 0.000 description 24
- 229910052750 molybdenum Inorganic materials 0.000 description 24
- 239000011733 molybdenum Substances 0.000 description 24
- 238000002310 reflectometry Methods 0.000 description 22
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 21
- 230000008859 change Effects 0.000 description 20
- 239000012212 insulator Substances 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- 239000011521 glass Substances 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 18
- 229910052721 tungsten Inorganic materials 0.000 description 18
- 239000010937 tungsten Substances 0.000 description 18
- 239000011159 matrix material Substances 0.000 description 16
- 229910052715 tantalum Inorganic materials 0.000 description 16
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 16
- 239000010409 thin film Substances 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 12
- 229910052804 chromium Inorganic materials 0.000 description 12
- 238000012937 correction Methods 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 12
- 230000031700 light absorption Effects 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 239000004372 Polyvinyl alcohol Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 229920002451 polyvinyl alcohol Polymers 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- 229910052779 Neodymium Inorganic materials 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000003086 colorant Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 229910052785 arsenic Inorganic materials 0.000 description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229920003023 plastic Polymers 0.000 description 7
- 239000004033 plastic Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052793 cadmium Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- -1 a-InGaZnO Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229920002647 polyamide Polymers 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229920002284 Cellulose triacetate Polymers 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 3
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910019015 Mg-Ag Inorganic materials 0.000 description 2
- 229910000583 Nd alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- NNBFNNNWANBMTI-UHFFFAOYSA-M brilliant green Chemical compound OS([O-])(=O)=O.C1=CC(N(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](CC)CC)C=C1 NNBFNNNWANBMTI-UHFFFAOYSA-M 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002497 iodine compounds Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007147258A JP2008009425A (ja) | 2006-06-02 | 2007-06-01 | 液晶表示装置及び電子機器 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006155471 | 2006-06-02 | ||
| JP2007147258A JP2008009425A (ja) | 2006-06-02 | 2007-06-01 | 液晶表示装置及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013142456A Division JP5668106B2 (ja) | 2006-06-02 | 2013-07-08 | 液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008009425A true JP2008009425A (ja) | 2008-01-17 |
| JP2008009425A5 JP2008009425A5 (enExample) | 2010-07-08 |
Family
ID=39067636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007147258A Withdrawn JP2008009425A (ja) | 2006-06-02 | 2007-06-01 | 液晶表示装置及び電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008009425A (enExample) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008065216A (ja) * | 2006-09-11 | 2008-03-21 | Seiko Epson Corp | 液晶装置及び電子機器 |
| WO2008129748A1 (ja) * | 2007-04-13 | 2008-10-30 | Sharp Kabushiki Kaisha | 液晶表示装置、及び液晶表示装置の製造方法 |
| JP2010103778A (ja) * | 2008-10-23 | 2010-05-06 | Sumitomo Chemical Co Ltd | 照明光通信システム用の送信装置 |
| JP2014146055A (ja) * | 2014-04-11 | 2014-08-14 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2014194573A (ja) * | 2012-08-03 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| US9455280B2 (en) | 2012-09-13 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9478535B2 (en) | 2012-08-31 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor film |
| US9829761B2 (en) | 2006-10-31 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| JP2018136539A (ja) * | 2017-02-21 | 2018-08-30 | 株式会社半導体エネルギー研究所 | 表示パネル、表示装置、入出力装置、情報処理装置 |
| WO2024236433A1 (ja) * | 2023-05-17 | 2024-11-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001056474A (ja) * | 1999-06-25 | 2001-02-27 | Hyundai Electronics Ind Co Ltd | フリンジフィールド駆動液晶表示装置及びその製造方法 |
| JP2001059976A (ja) * | 1999-06-30 | 2001-03-06 | Hyundai Electronics Ind Co Ltd | 液晶表示装置及びその製造方法 |
| JP2001083540A (ja) * | 1999-09-03 | 2001-03-30 | Ind Technol Res Inst | ワイドビューアングル液晶ディスプレイの電極構造の製作方法 |
| WO2001033292A1 (fr) * | 1999-10-29 | 2001-05-10 | Hitachi, Ltd. | Dispositif d'affichage a cristaux liquides |
| JP2002221736A (ja) * | 2001-01-29 | 2002-08-09 | Hitachi Ltd | 液晶表示装置 |
| JP2002268074A (ja) * | 2001-03-07 | 2002-09-18 | Hitachi Ltd | 液晶表示装置 |
-
2007
- 2007-06-01 JP JP2007147258A patent/JP2008009425A/ja not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001056474A (ja) * | 1999-06-25 | 2001-02-27 | Hyundai Electronics Ind Co Ltd | フリンジフィールド駆動液晶表示装置及びその製造方法 |
| JP2001059976A (ja) * | 1999-06-30 | 2001-03-06 | Hyundai Electronics Ind Co Ltd | 液晶表示装置及びその製造方法 |
| JP2001083540A (ja) * | 1999-09-03 | 2001-03-30 | Ind Technol Res Inst | ワイドビューアングル液晶ディスプレイの電極構造の製作方法 |
| WO2001033292A1 (fr) * | 1999-10-29 | 2001-05-10 | Hitachi, Ltd. | Dispositif d'affichage a cristaux liquides |
| JP2002221736A (ja) * | 2001-01-29 | 2002-08-09 | Hitachi Ltd | 液晶表示装置 |
| JP2002268074A (ja) * | 2001-03-07 | 2002-09-18 | Hitachi Ltd | 液晶表示装置 |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008065216A (ja) * | 2006-09-11 | 2008-03-21 | Seiko Epson Corp | 液晶装置及び電子機器 |
| US11860495B2 (en) | 2006-10-31 | 2024-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US12276891B2 (en) | 2006-10-31 | 2025-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US10698277B2 (en) | 2006-10-31 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US11592717B2 (en) | 2006-10-31 | 2023-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US9829761B2 (en) | 2006-10-31 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US11372298B2 (en) | 2006-10-31 | 2022-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US11016354B2 (en) | 2006-10-31 | 2021-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| WO2008129748A1 (ja) * | 2007-04-13 | 2008-10-30 | Sharp Kabushiki Kaisha | 液晶表示装置、及び液晶表示装置の製造方法 |
| JP2010103778A (ja) * | 2008-10-23 | 2010-05-06 | Sumitomo Chemical Co Ltd | 照明光通信システム用の送信装置 |
| JP2014194573A (ja) * | 2012-08-03 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| US9449996B2 (en) | 2012-08-03 | 2016-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9941309B2 (en) | 2012-08-03 | 2018-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9478535B2 (en) | 2012-08-31 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor film |
| US10217776B2 (en) | 2012-08-31 | 2019-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising first metal oxide film and second metal oxide film |
| US9455280B2 (en) | 2012-09-13 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10236305B2 (en) | 2012-09-13 | 2019-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10700099B2 (en) | 2012-09-13 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US12080717B2 (en) | 2012-09-13 | 2024-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10446584B2 (en) | 2012-09-13 | 2019-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9806099B2 (en) | 2012-09-13 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2014146055A (ja) * | 2014-04-11 | 2014-08-14 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| US11640086B2 (en) | 2017-02-21 | 2023-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, display device, input/output device, and data processing device |
| JP7138444B2 (ja) | 2017-02-21 | 2022-09-16 | 株式会社半導体エネルギー研究所 | 表示パネル |
| JP2018136539A (ja) * | 2017-02-21 | 2018-08-30 | 株式会社半導体エネルギー研究所 | 表示パネル、表示装置、入出力装置、情報処理装置 |
| US12078893B2 (en) | 2017-02-21 | 2024-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, display device, input/output device, and data processing device |
| US11353754B2 (en) | 2017-02-21 | 2022-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, display device, input/output device, and data processing device |
| US12360420B2 (en) | 2017-02-21 | 2025-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, display device, input/output device, and data processing device |
| WO2024236433A1 (ja) * | 2023-05-17 | 2024-11-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7223890B2 (ja) | 半導体装置 | |
| US11600236B2 (en) | Display device and driving method thereof | |
| JP2008009425A (ja) | 液晶表示装置及び電子機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100525 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100525 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120323 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120417 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120612 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121127 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121225 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130702 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20130822 |