JP2008004965A - Terminal electrode, semiconductor device, module and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To efficiently absorb damages in joining while suppressing deformation of a protruding electrode. <P>SOLUTION: A conductive layer 6 connected to a pad electrode 2 is formed in an opening 5 of a photosensitive resin layer 4, and the photosensitive resin layer 4 is removed so that the photosensitive resin layer 4 may remain on the surrounding of the conductive layer 6. Thus, a bump electrode where the surrounding of the conductive layer 6 is covered with the photosensitive resin layer 4 is formed. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

  The present invention relates to a terminal electrode, a semiconductor device, a semiconductor module, an electronic device, a method of manufacturing a terminal electrode, and a method of manufacturing a semiconductor device, and more particularly, to a bump electrode used in a flip chip method or a TAB (Tape Automated Bonding) method. Therefore, it is suitable.

  Conventional TCP (Tape Carrier Package), COF (Chip On Film), COG (Chip On Glass), etc. are disclosed in the specification and drawings of Japanese Patent Application No. 2001-44824 in order to connect a semiconductor chip and a mother substrate. As described, there is a method of forming bump electrodes on a semiconductor chip.

FIG. 14 is a cross-sectional view showing a conventional bump electrode manufacturing method.
In FIG. 14A, a pad electrode 202 is provided on a semiconductor substrate 201 in which an active region is formed, and an insulating film 203 is formed on the semiconductor substrate 201 including the pad electrode 202. As the insulating film 203, for example, a silicon oxide film, a silicon nitride film, a polyimide film, or the like can be used.
Then, a photosensitive resin layer 204 is formed over the semiconductor substrate 201 over which the insulating film 203 is formed. Note that the photosensitive resin layer 204 can be formed using, for example, spin coating, curtain coating, screen printing, an inkjet method, or the like.

Next, as shown in FIG. 14B, an opening 205 is formed on the pad electrode 202 by exposing and developing the photosensitive resin layer 204.
Next, as shown in FIG. 14C, a conductive layer 206 is formed in the opening 205 by using electroless plating. As the conductive layer 206, for example, nickel Ni, gold Au, copper Cu, or the like can be used.
Next, as shown in FIG. 14D, the photosensitive resin layer 204 is removed to expose the periphery of the conductive layer 206, and a bump electrode made of the conductive layer 206 is formed.

However, in the conventional bump electrode, when a soft metal such as gold Au is used as the conductive layer 206, the amount of deformation at the time of bonding increases.
For this reason, in order to increase the density of the bump electrodes, if the pitch between the bump electrodes is reduced, there is a problem that adjacent bump electrodes come into contact with each other and the bump electrodes are short-circuited.
On the other hand, when a hard metal such as nickel Ni is used as the conductive layer 206, there is a problem that damage at the time of bonding is not absorbed by the conductive layer 206 and the semiconductor substrate 201 is damaged.

In addition, since the bump electrode has a protruding structure, when the semiconductor chip and the substrate are connected via the anisotropic conductive sheet, ACF (Anisotropic Conductive Film) particles on the bump electrode flow out and the connection reliability deteriorates. Accordingly, a first object of the present invention is to provide a terminal electrode, a semiconductor device, and a semiconductor module that can prevent the protruding electrodes from directly contacting each other even when the protruding electrodes are largely deformed. It is to provide a method for manufacturing an electronic device, a terminal electrode, and a method for manufacturing a semiconductor device.

In addition, a second object of the present invention is to provide a terminal electrode, a semiconductor device, a semiconductor module, an electronic device, and a method for manufacturing the terminal electrode that can efficiently absorb damage during bonding while suppressing deformation of the protruding electrode. And it is providing the manufacturing method of a semiconductor device.
A third object of the present invention is to provide a terminal electrode, a semiconductor device, and a semiconductor module capable of efficiently capturing ACF particles on a protruding electrode when bonding the protruding electrode through an anisotropic conductive layer. It is to provide a method for manufacturing an electronic device, a terminal electrode, and a method for manufacturing a semiconductor device.

In order to solve the above-described problem, according to the terminal electrode according to claim 1, the terminal electrode includes a protruding electrode formed on the pad electrode and a resin layer provided so as to individually surround the protruding electrode. Features.
As a result, it is possible to surround the periphery of the protruding electrode with an insulating layer, and even when the protruding electrode is deformed, it is possible to prevent the protruding electrodes from coming into direct contact with each other.

For this reason, even when the protruding electrodes are made of a soft metal, it is possible to advance the narrowing of the pitch between the protruding electrodes while preventing short-circuiting between the protruding electrodes, and to absorb damage during bonding, It is possible to increase the density of the protruding electrodes.
In addition, by enclosing the periphery of the protruding electrode with a resin layer, even when the protruding electrode is made of a hard metal, damage at the time of bonding of the protruding electrode can be mitigated by the resin layer.
For this reason, it is possible to suppress the deformation of the protruding electrodes during bonding while reducing damage to the semiconductor chip, and it is possible to increase the density of the protruding electrodes by increasing the pitch between the protruding electrodes. It becomes.

According to the terminal electrode of the present invention, the protruding electrode is composed of a multilayer structure in which conductive materials having different hardnesses are laminated, and a soft conductive material is used for the uppermost layer of the multilayer structure. It is characterized by that.
This makes it possible to configure the protruding electrode using hard metal and soft metal, and to adjust the deformation amount of the protruding electrode, while absorbing damage during bonding using both the protruding electrode and the resin layer. It becomes possible to do.
The terminal electrode according to claim 3 is characterized in that the protruding electrode is raised on the resin layer.
Thereby, even when the periphery of the protruding electrode is surrounded by the resin layer, the protruding electrode can be protruded on the resin layer, and the protruding electrode can be easily joined.

According to the terminal electrode of claim 4, the step between the protruding electrode and the resin layer is made smaller than the diameter of the ACF particles, and the surface of the protruding electrode is lower than the surface of the resin layer. It is characterized by being formed.
As a result, the ACF particles on the protruding electrode can be protruded on the resin layer, and the ACF particles can be confined inside the resin layer, and the ACF particles can be efficiently captured on the protruding electrode. Become.
For this reason, even when the protruding electrode is bonded via the anisotropic conductive layer, the ACF particles can be prevented from flowing out from the protruding electrode, and the connection reliability of the protruding electrode by the anisotropic conductive layer can be prevented. Can be improved.

According to another aspect of the semiconductor device of the present invention, a semiconductor substrate on which an active region is formed, a pad electrode formed on the semiconductor substrate, a protruding electrode formed on the pad electrode, and the protruding electrode And a resin layer provided so as to be individually surrounded.
This makes it possible to mitigate damage at the time of bonding of the protruding electrode with the resin layer, and even when the protruding electrode is made of a hard metal, it is possible to reduce damage to the semiconductor substrate.
For this reason, it becomes possible to suppress the deformation of the protruding electrodes at the time of bonding while preventing deterioration of the reliability of the semiconductor device, and to reduce the pitch between the protruding electrodes and increase the density of the semiconductor device. Is possible.

According to another aspect of the semiconductor module of the present invention, a semiconductor substrate on which an active region is formed, a pad electrode formed on the semiconductor substrate, a protruding electrode formed on the pad electrode, and the protruding electrode It is characterized by comprising a resin layer provided so as to individually surround and a circuit board on which a lead electrode joined to the protruding electrode is formed.
Accordingly, it is possible to bond the protruding electrode and the lead electrode while supporting the lead electrode with the resin layer, and it is possible to reduce damage at the time of bonding with the resin layer.
For this reason, it is possible to configure the protruding electrodes with a hard metal while reducing damage to the semiconductor substrate, and it is possible to increase the density of the circuit board by reducing the pitch between the protruding electrodes. .

The semiconductor module according to claim 7, wherein a semiconductor substrate having an active region formed thereon, a pad electrode formed on the semiconductor substrate, a protruding electrode formed on the pad electrode, and the protruding electrode, A circuit board on which a resin layer is provided so as to individually surround the protruding electrodes, a lead electrode disposed opposite to the protruding electrodes, and the semiconductor. An anisotropic conductive layer is provided between the substrate and the circuit board and electrically connects the protruding electrode and the lead electrode.
As a result, the ACF particles on the protruding electrode can be protruded on the resin layer, and the ACF particles can be confined inside the resin layer, and the ACF particles can be efficiently captured on the protruding electrode. Become.
Therefore, even when the protruding electrode and the lead electrode are bonded via the anisotropic conductive layer, the ACF particles can be prevented from flowing out from the protruding electrode, and the anisotropic conductive layer is used. It is possible to improve the connection reliability between the protruding electrode and the lead electrode.

According to another aspect of the electronic device of the present invention, the semiconductor substrate on which the active region is formed, the pad electrode formed on the semiconductor substrate, the protruding electrode formed on the pad electrode, and the protruding electrode It is characterized by comprising a resin layer provided so as to be individually surrounded, a circuit board on which a lead electrode joined to the protruding electrode is formed, and an electronic component connected to the circuit board.
This makes it possible to mitigate damage during bonding with the resin layer, and even when the protruding electrodes are made of a hard metal, it is possible to reduce damage during bonding. It is possible to reduce the size of electronic equipment by increasing the pitch.

The electronic device according to claim 9, wherein a semiconductor substrate on which an active region is formed, a pad electrode formed on the semiconductor substrate, a protruding electrode formed on the pad electrode, and the protruding electrode, A circuit board on which a resin layer is provided so as to individually surround the protruding electrodes, a lead electrode disposed opposite to the protruding electrodes, and the semiconductor. An anisotropic conductive layer is provided between the substrate and the circuit board and electrically connects the protruding electrode and the lead electrode, and an electronic component connected to the circuit board.
As a result, the ACF particles can be efficiently captured on the protruding electrode, and even when the protruding electrode and the lead electrode are bonded via the anisotropic conductive layer, the connection reliability between the protruding electrode and the lead electrode is improved. Can be improved.

According to the method for manufacturing a terminal electrode according to claim 10, the step of forming a resin layer on a substrate provided with a pad electrode, the step of forming an opening in the resin layer on the pad electrode, A step of embedding a conductive layer in the opening; and a step of separating the resin layer so that the conductive layer is surrounded by the resin layer.
Thus, by patterning the resin layer in which the conductive layer is embedded, the protruding electrodes can be individually surrounded by the resin layer, and a buffer layer is provided around the protruding electrodes without complicating the manufacturing process. It becomes possible.

According to the method for manufacturing a terminal electrode according to claim 11, the resin layer is formed on the substrate provided with the pad electrode, and an opening is formed on the pad electrode. The method includes a step of patterning a layer into a cylindrical shape and a step of embedding a conductive layer in the opening by discharging a conductive material into the opening.
Thus, by patterning the resin layer into a cylindrical shape, it becomes possible to easily form the protruding electrodes individually surrounded by the resin layer, and to form the protruding electrodes using various conductive materials. It becomes possible, and it becomes possible to provide a buffer layer around the bump electrode without complicating the manufacturing process.

In addition, according to the method of manufacturing a terminal electrode according to claim 12, the step of forming a seed electrode on the protective film from which the pad electrode is exposed, the step of forming a resin layer on the seed electrode, and the seed electrode Forming an opening in the resin layer formed thereon, embedding a conductive layer in the opening by electrolytic plating, and patterning the resin layer so that the conductive layer is individually surrounded by the resin layer. And a step of exposing the seed electrode and a step of removing the exposed seed electrode.
As a result, the embedding speed of the conductive layer can be easily improved, and by patterning the resin layer in which the conductive layer is embedded, the protruding electrodes can be individually surrounded by the resin layer.
For this reason, it becomes possible to provide a buffer layer around the bump electrode while complicating the manufacturing process and suppressing a decrease in throughput.

According to the method for manufacturing a terminal electrode according to claim 13, the step of forming a resin layer on a substrate provided with a pad electrode, the step of forming an opening in the resin layer on the pad electrode, A step of embedding a conductive layer in the opening so as to rise above the opening, a step of flattening the resin layer in which the conductive layer is embedded, and the surface of the conductive layer is lower than the surface of the resin layer As described above, the method includes a step of removing a part of the conductive layer embedded in the resin layer, and a step of separating the resin layer so that the conductive layer is surrounded by the resin layer.
Thereby, when flattening the resin layer in which the conductive layer is embedded, both the variation in the thickness of the conductive layer and the variation in the thickness of the resin layer can be made uniform.
For this reason, it becomes possible to determine the variation in the level difference between the conductive layer and the resin layer by the variation in the thickness when removing a part of the conductive layer, and the variation in the level difference between the conductive layer and the resin layer. It is possible to stably capture the ACF particles on the conductive layer.

According to the method for manufacturing a terminal electrode according to claim 14, the step between the conductive layer and the resin layer is made smaller than the diameter of the ACF particles, and the surface of the protruding electrode is larger than the surface of the resin layer. Is formed at a low position.
As a result, it is possible to provide a buffer layer around the protruding electrode, and to efficiently capture the ACF particles on the protruding electrode, and to connect the protruding electrode and the lead electrode via the anisotropic conductive layer. Even when it is performed, the connection reliability between the protruding electrode and the lead electrode can be improved.

According to the method for manufacturing a terminal electrode according to claim 15, the conductive layer is formed of a multilayer structure in which conductive materials having different hardnesses are laminated, and a soft conductive material is used for the uppermost layer of the multilayer structure. It is characterized by being.
As a result, by changing the conductive material at the time of stacking, it becomes possible to configure the protruding electrode using hard metal and soft metal, and the deformation amount and damage absorption of the protruding electrode are suppressed while suppressing the complexity of the manufacturing process. The amount can be easily adjusted.

The method of manufacturing a semiconductor device according to claim 16 further includes: forming an active region on a semiconductor substrate; forming a pad electrode on the semiconductor substrate on which the active region is formed; and forming the pad electrode. Forming a resin layer on the formed semiconductor substrate, forming an opening in the resin layer on the pad electrode, embedding a conductive layer in the opening, and surrounding the conductive layer with the resin layer And the step of separating the resin layer as described above.
This makes it possible to provide a buffer layer around the protruding electrode without complicating the manufacturing process, and it is possible to protect the semiconductor substrate from damage during bonding while suppressing deformation of the protruding electrode. Thus, the pitch of the protruding electrodes can be reduced.

Furthermore, according to the method of manufacturing a semiconductor device according to claim 17, the step of forming an active region on a semiconductor substrate, the step of forming a pad electrode on the semiconductor substrate on which the active region is formed, and the formation of the pad electrode Forming a resin layer on the formed semiconductor substrate, patterning the resin layer in a cylindrical shape so that an opening is formed on the pad electrode, and discharging a conductive material into the opening. And a step of embedding a conductive layer in the opening.
Accordingly, it is possible to form a bump electrode using various conductive materials while providing a buffer layer around the bump electrode, and to protect the semiconductor substrate from damage during bonding. The characteristics of the protruding electrode can be easily adjusted.

According to a method of manufacturing a semiconductor device according to claim 18, the step of forming an active region on a semiconductor substrate, the step of forming a pad electrode on the semiconductor substrate on which the active region is formed, and on the pad electrode Forming a protective film; forming a first opening in the protective film on the pad electrode; forming a seed electrode on the protective film having the first opening; Forming a resin layer on the seed electrode; forming a second opening in the resin layer formed on the seed electrode; and forming a conductive layer in the first and second openings by electrolytic plating. A step of embedding, a step of patterning the resin layer so that the conductive layer is individually surrounded by the resin layer, exposing the seed electrode, and a step of removing the exposed seed electrode. When That.
As a result, it is possible to form a protruding electrode with a buffer layer provided around it while complicating the manufacturing process and suppressing a decrease in throughput, and it is possible to protect the semiconductor substrate from damage during bonding. Thus, the pitch of the protruding electrodes can be reduced.

The method of manufacturing a semiconductor device according to claim 19 further includes: forming an active region on a semiconductor substrate; forming a pad electrode on the semiconductor substrate on which the active region is formed; and forming the pad electrode. A step of forming a resin layer on the formed semiconductor substrate, a step of forming an opening in the resin layer on the pad electrode, a step of embedding a conductive layer in the opening so as to rise above the opening, Flattening the resin layer in which the conductive layer is embedded; removing a part of the conductive layer embedded in the resin layer so that the surface of the conductive layer is lower than the surface of the resin layer; And the step of separating the resin layer so that the conductive layer is surrounded by the resin layer.
As a result, it is possible to determine the variation in level difference between the conductive layer and the resin layer by the thickness variation when removing a part of the conductive layer, and the variation in level difference between the conductive layer and the resin layer. It is possible to stably capture the ACF particles on the conductive layer.

According to the method for manufacturing a semiconductor device according to claim 20, the step between the conductive layer and the resin layer is made smaller than the diameter of the ACF particles, and the surface of the protruding electrode is larger than the surface of the resin layer. Is formed at a low position.
As a result, it is possible to provide a buffer layer around the protruding electrode, and to efficiently capture the ACF particles on the protruding electrode, and to protect the semiconductor substrate from damage during bonding. It becomes possible to improve the connection reliability between the protruding electrode and the lead electrode using the isotropic conductive layer.

Furthermore, according to the method for manufacturing a semiconductor device according to claim 21, the conductive layer is formed of a multilayer structure in which conductive materials having different hardnesses are laminated, and a soft conductive material is used for an uppermost layer of the multilayer structure. It is characterized by being.
As a result, it is possible to easily adjust the deformation amount and damage absorption amount of the protruding electrode while suppressing the complexity of the manufacturing process, and it is possible to increase the density and reliability of the semiconductor device. .

  As described above, according to the present invention, it is possible to mitigate damage to the protruding electrode with the resin layer even when the protruding electrode is made of a hard metal by surrounding the protruding electrode with the resin layer. Accordingly, it is possible to increase the density of the bump electrodes by narrowing the pitch between the protruding electrodes.

Hereinafter, an electrode structure according to an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a sectional view showing a bump electrode manufacturing method according to the first embodiment of the present invention. In the first embodiment, the conductive layer 6 is covered with the photosensitive resin layer 4 and the conductive layer 6 is formed by electroless plating.
In FIG. 1A, a pad electrode 2 is provided on a semiconductor substrate 1 on which an active region is formed, and an insulating film 3 is formed on the semiconductor substrate 1 including the pad electrode 2. As the insulating film 3, for example, a silicon oxide film, a silicon nitride film, a polyimide film, or the like can be used.
Then, a photosensitive resin layer 4 is formed on the semiconductor substrate 1 on which the insulating film 3 is formed. The photosensitive resin layer 4 can be formed by using, for example, spin coating, curtain coating, screen printing, an inkjet method, or the like.

Next, as shown in FIG. 1B, the opening 5 is formed on the pad electrode 2 by exposing and developing the photosensitive resin layer 4. Then, the pad electrode 2 is exposed by etching the insulating film 3 using the photosensitive resin layer 4 in which the opening 5 is formed as a mask.
Next, as shown in FIG. 1C, by using electroless plating, the conductive layer 6 is raised on the photosensitive resin layer 4 so that the conductive layer 6 connected to the pad electrode 2 is opened. 5 to form. As the conductive layer 6, for example, nickel Ni, gold Au, copper Cu, or the like can be used.

As the electroless plating, for example, when the pad electrode 2 is made of aluminum Al and nickel Ni is used as the conductive layer 6, a zincate treatment is performed on the pad electrode 2 using an alkaline zinc solution, Zinc Zn is substituted and deposited on the surface.
Then, by immersing the pad electrode 2 whose surface is replaced with zinc Zn in an electroless nickel plating solution, zinc Zn and nickel Ni are replaced, and a conductive layer 6 made of nickel Ni is formed on the pad electrode 2. To do.
Further, as a method different from the zincate treatment, for example, by immersing the pad electrode 2 made of aluminum Al in a solution containing a reducing agent such as palladium, and then immersing it in an electroless nickel plating solution, A conductive layer 6 made of nickel Ni can be deposited on the pad electrode 2.

Next, as shown in FIG. 1 (d), the photosensitive resin layer 4 is removed so that the photosensitive resin layer 4 having a width W remains around the conductive layer 6. A bump electrode covered with the photosensitive resin layer 4 is formed.
As a result, the periphery of the conductive layer 6 can be surrounded by the photosensitive resin layer 4, and even when the conductive layer 6 is deformed at the time of bonding, it is possible to prevent the conductive layers 6 from directly contacting each other. .

For this reason, even when the conductive layer 6 is made of a soft metal such as Au, it is possible to reduce the pitch between the bump electrodes while preventing a short circuit between the bump electrodes, and damage due to the photosensitive resin layer 4. It is possible to increase the density of the bump electrodes while making it possible to absorb water.
In addition, by surrounding the conductive layer 6 with the photosensitive resin layer 4, even when the conductive layer 6 is made of a hard metal such as Ni, the photosensitive resin layer 4 reduces damage during bonding of the conductive layer 6. It becomes possible to do.

For this reason, it becomes possible to suppress the deformation | transformation of the conductive layer 6 at the time of joining, reducing the damage at the time of joining, and it is possible to increase the density of the bump electrodes by promoting a narrow pitch between the bump electrodes. It becomes.
In addition, even when the conductive layer 6 is surrounded by the photosensitive resin layer 4 by forming the conductive layer 6 in the opening 5 so that the conductive layer 6 rises on the photosensitive resin layer 4, The conductive layer 6 can be projected on the photosensitive resin layer 4, and the conductive layer 6 can be easily joined.

Note that the shape of the photosensitive resin layer 4 covering the periphery of the conductive layer 6 is not necessarily limited to a circular shape, and may be, for example, a rectangular shape or an elliptical shape, and in a region where the interval between the conductive layers 6 is narrow. In the region where the width W of the photosensitive resin layer 4 is reduced and the interval between the conductive layers 6 is wide, the width W of the photosensitive resin layer 4 may be increased.
Further, when the width W of the photosensitive resin layer 4 is wide, the buffering force by the photosensitive resin layer 4 at the time of bonding becomes strong, but the bonding force of the conductive layer 6 becomes weak and the width W of the photosensitive resin layer 4 is narrow. Then, the buffering force by the photosensitive resin layer 4 at the time of bonding becomes weak, but the bonding force of the conductive layer 6 becomes strong.
For this reason, the width W of the photosensitive resin layer 4 can be appropriately adjusted in consideration of the buffering force of the photosensitive resin layer 4 and the bonding force of the conductive layer 6 during bonding.

FIG. 2 is a cross-sectional view showing a module structure manufacturing method according to the second embodiment of the present invention. In the second embodiment, the conductive layer 6 whose periphery is covered with the photosensitive resin layer 4 is mounted on the TCP.
In FIG. 2A, a lead terminal 11 is provided on a tape substrate 10 made of a polyimide film or the like. When the semiconductor substrate 1 of FIG. 1 is mounted on the tape substrate 10, the conductive layer 6 surrounded by the photosensitive resin layer 4 is disposed so as to face the lead terminal 11.

Next, in FIG. 2B, the conductive layer 6 and the lead terminal 11 are connected by eutectic bonding of the conductive layer 6 and the lead terminal 11 under heating and pressure, for example.
Here, even when the conductive layer 6 is pressurized to connect the conductive layer 6 and the lead terminal 11, the pressure applied to the conductive layer 6 can be relaxed by the photosensitive resin layer 4.
For this reason, when the conductive layer 6 and the lead terminal 11 are connected, damage to the semiconductor substrate 1 can be reduced, and the bump electrodes using TCP can be stably bonded.

FIG. 3 is a cross-sectional view showing a module structure manufacturing method according to the third embodiment of the present invention. In the third embodiment, the conductive layer 6 whose periphery is covered with the photosensitive resin layer 4 is mounted on the COF.
In FIG. 3, a lead terminal 22 is provided on a film substrate 21 made of a polyimide film or the like, and a part of the lead terminal 22 is covered with a protective film 23 such as a solder resist. When the semiconductor substrate 1 of FIG. 1 is mounted on the film substrate 21, the conductive layer 6 surrounded by the photosensitive resin layer 4 is disposed to face the lead terminal 22.

Next, in FIG. 3B, the conductive layer 6 and the lead terminal 22 are connected by eutectic bonding of the conductive layer 6 and the lead terminal 22 under heating and pressure, for example.
Here, even when the conductive layer 6 is pressurized to connect the conductive layer 6 and the lead terminal 22, the pressure applied to the conductive layer 6 can be relaxed by the photosensitive resin layer 4.
For this reason, when the conductive layer 6 and the lead terminal 22 are connected, damage to the semiconductor substrate 1 can be reduced, and bonding of the bump electrodes using COF can be performed stably.

FIG. 4 is a sectional view showing a bump electrode manufacturing method according to the fourth embodiment of the present invention. In the fourth embodiment, the periphery of the conductive layer 36 is covered with a photosensitive resin layer 34, and the conductive layer 36 is formed by an ink jet method.
4A, a pad electrode 32 is provided on a semiconductor substrate 31 on which an active region is formed, and an insulating film 33 is formed on the semiconductor substrate 31 so that the pad electrode 32 is exposed. Then, a photosensitive resin layer 34 is formed on the semiconductor substrate 31 on which the insulating film 33 is formed.

Next, as shown in FIG. 4B, the photosensitive resin layer 34 is exposed and developed so that the photosensitive resin layer 34 remains around the pad electrode 32, and an opening is formed on the pad electrode 32. A portion 35 is formed.
Next, as shown in FIG. 4C, the droplet 38 is ejected into the opening 35 through the inkjet head 37 so that the conductive layer 36 rises on the photosensitive resin layer 34, and the pad electrode 32. A conductive layer 36 connected to is formed in the opening 35. As the droplet 38, for example, a metal slurry or a metal paste in which a metal powder such as nickel Ni, gold Au, or copper Cu is dispersed in a solvent can be used.
Thereby, by performing exposure and development of the photosensitive resin layer 34, it becomes possible to collectively form the opening 35 of the photosensitive resin layer 34 and to separate the photosensitive resin layer 34, and to simplify the manufacturing process. It is possible to provide the photosensitive resin layer 34 around the conductive layer 36 while achieving the above.

FIG. 5 is a sectional view showing a bump electrode manufacturing method according to the fifth embodiment of the present invention. In the fifth embodiment, the periphery of the conductive layer 47 is covered with the photosensitive resin layer 44, and the conductive layer 47 is formed by electrolytic plating.
In FIG. 5A, a pad electrode 42 is provided on a semiconductor substrate 41 on which an active region is formed, and an insulating film 43 is formed on the semiconductor substrate 41 so that the pad electrode 42 is exposed. Then, the seed electrode 44 is formed on the insulating film 43 including the pad electrode 42 by, for example, electroless plating, sputtering, or vapor deposition. For the seed electrode 44, for example, a conductive material such as nickel Ni, chromium Cr, titanium Ti, or tungsten W can be used.

Next, as shown in FIG. 5B, a photosensitive resin layer 44 is formed on the semiconductor substrate 41 on which the seed electrode 44 is formed, and the photosensitive resin layer 44 is exposed and developed, whereby a pad electrode is formed. An opening 46 is formed on 42.
Next, as shown in FIG. 5C, the electroplating is performed using the seed electrode 44 as a plating lead, so that the conductive layer 47 rises on the photosensitive resin layer 44 and is connected to the seed electrode 44. A conductive layer 47 is formed in the opening 46. As the conductive layer 46, for example, nickel Ni, gold Au, copper Cu, or the like can be used.

Next, as shown in FIG. 5D, the photosensitive resin layer 45 is removed so that the photosensitive resin layer 45 remains around the conductive layer 47, so that the conductive layer 47 is surrounded by the photosensitive resin. A bump electrode covered with the layer 45 is formed. Then, the insulating film 43 is exposed by etching the seed electrode 44 using the photosensitive resin layer 45 and the conductive layer 47 remaining on the semiconductor substrate 41 as a mask.
Thereby, it becomes possible to improve the formation speed of the conductive layer 47 while enabling the periphery of the conductive layer 47 to be covered with the photosensitive resin layer 45, while suppressing the complexity of the manufacturing process and the reduction in throughput, A buffer layer can be provided around the conductive layer 47.

FIG. 6 is a sectional view showing a bump electrode manufacturing method according to the sixth embodiment of the present invention. In the sixth embodiment, the periphery of the bump electrode is covered with a photosensitive resin layer 54, and the bump electrode has a two-layer structure including conductive layers 56 and 57.
In FIG. 6A, a pad electrode 52 is provided on a semiconductor substrate 51 on which an active region is formed, and an insulating film 53 is formed on the semiconductor substrate 51 including the pad electrode 52. Then, a photosensitive resin layer 54 is formed on the semiconductor substrate 51 on which the insulating film 53 is formed.
Next, as shown in FIG. 6B, an opening 55 is formed on the pad electrode 52 by exposing and developing the photosensitive resin layer 54. The pad electrode 52 is exposed by etching the insulating film 53 using the photosensitive resin layer 54 with the opening 55 formed as a mask.

Next, as shown in FIG. 6C, the conductive layer 56 connected to the pad electrode 52 is formed to a height in the middle of the opening 55 by using electroless plating. As the conductive layer 56, for example, a hard metal such as nickel Ni or copper Cu can be used.
Next, by replacing the plating solution and performing electroless plating, the conductive layer 57 connected to the conductive layer 56 is formed in the opening 55 so that the conductive layer 57 rises on the photosensitive resin layer 54. To do. As the conductive layer 57, for example, a soft metal such as gold Au can be used. Further, as the conductive layer 57, for example, a solder material such as Sn, Sn—Pb, Sn—Ag, Sn—Cu, Sn—Zu may be used.

When the conductive layers 56 and 57 are formed in the opening 55, electrolytic plating or an ink jet method may be used in addition to electroless plating.
Next, as shown in FIG. 6D, the photosensitive resin layer 54 is removed so that the photosensitive resin layer 54 remains around the conductive layers 56 and 57, so that the periphery of the conductive layers 56 and 57 is removed. A bump electrode covered with the photosensitive resin layer 54 is formed.
Thereby, it becomes possible to comprise a bump electrode using a hard metal and a soft metal by replacing | exchanging the plating solution at the time of bump electrode formation.
For this reason, it becomes possible to share the damage absorption at the time of joining to the bump electrode while making it possible to adjust the deformation amount of the bump electrode, and to absorb the damage at the time of joining more effectively.

FIG. 7 is a sectional view showing a bump electrode manufacturing method according to a seventh embodiment of the present invention. In the seventh embodiment, the periphery of the conductive layer 66 is covered with the photosensitive resin layer 64, and a step is provided between the conductive layer 66 and the photosensitive resin layer 64.
In FIG. 7A, a pad electrode 62 is provided on a semiconductor substrate 61 on which an active region is formed, and an insulating film 63 is formed on the semiconductor substrate 61 including the pad electrode 62. Then, a photosensitive resin layer 64 is formed on the semiconductor substrate 61 on which the insulating film 63 is formed.

Next, as shown in FIG. 7B, an opening 65 is formed on the pad electrode 62 by exposing and developing the photosensitive resin layer 64. The pad electrode 62 is exposed by etching the insulating film 63 using the photosensitive resin layer 64 in which the opening 65 is formed as a mask.
Next, as shown in FIG. 7C, by using electroless plating, the conductive layer 66 connected to the pad electrode 62 is formed to a height in the middle of the opening 65, and the photosensitive resin layer 64 and A step having a height D is provided between the conductive layer 66 and the conductive layer 66. The step height D is preferably smaller than the average diameter of the ACF particles.
When the conductive layer 66 is formed in the opening 65, electrolytic plating or an ink jet method may be used in addition to electroless plating.

Next, as shown in FIG. 7D, the photosensitive resin layer 64 is removed so that the photosensitive resin layer 64 remains around the conductive layer 66, so that the conductive layer 66 is surrounded by the photosensitive resin. A bump electrode covered with the layer 64 is formed.
This makes it possible to confine the ACF particles on the conductive layer 66 while allowing the ACF particles disposed on the conductive layer 66 to protrude onto the resin layer 64, and to efficiently place the ACF particles on the conductive layer 66. It becomes possible to catch well.
Therefore, even when the conductive layer 66 is bonded via the anisotropic conductive layer, the ACF particles can be prevented from flowing out from the conductive layer 66, and the bump electrode using the anisotropic conductive layer can be prevented. It is possible to improve the connection reliability.

FIG. 8 is a sectional view showing a module structure manufacturing method according to the eighth embodiment of the present invention. In the eighth embodiment, the conductive layer 66 provided with a step between the photosensitive resin layer 64 and the anisotropic conductive sheet 72 is mounted on the glass substrate 70. .
In FIG. 8A, a lead terminal 71 such as an ITO electrode is formed on the glass substrate 70, for example. When the semiconductor substrate 61 of FIG. 7 is mounted on the glass substrate 70 via the anisotropic conductive sheet 72, the anisotropic conductive sheet 72 is sandwiched between and the photosensitive resin layer 64. The conductive layer 66 provided with a step is disposed opposite to the lead terminal 71.

Next, in FIG. 8B, the glass substrate 70 and the semiconductor substrate 61 are bonded under heating and pressure with the anisotropic conductive sheet 72 sandwiched therebetween, whereby the conductive layer 66 and the lead terminal are bonded. 71 is electrically connected.
Here, by providing a step between the photosensitive resin layer 64 and making the height D of the step smaller than the average diameter of the ACF particles 73, as shown in FIG. It becomes possible to confine the ACF particles on the conductive layer 66 while allowing the arranged ACF particles to protrude on the resin layer 64.
Therefore, it is possible to efficiently absorb the ACF particles 73 on the conductive layer 66 while allowing the photosensitive resin layer 54 to absorb damage applied to the semiconductor substrate 61, and the anisotropic conductive sheet 72 is used. It is possible to easily improve the connection reliability of the bump electrodes.

FIG. 9 is a sectional view showing a bump electrode manufacturing method according to the ninth embodiment of the present invention. In the ninth embodiment, a step is provided between the bump electrode and the photosensitive resin layer 84, and the bump electrode has a two-layer structure including conductive layers 86 and 87.
In FIG. 9A, a pad electrode 82 is provided on a semiconductor substrate 81 in which an active region is formed, and an insulating film 83 is formed on the semiconductor substrate 81 including the pad electrode 82. Then, a photosensitive resin layer 84 is formed on the semiconductor substrate 81 on which the insulating film 83 is formed.

Next, as shown in FIG. 9B, an opening 85 is formed on the pad electrode 82 by exposing and developing the photosensitive resin layer 84. Then, the pad electrode 82 is exposed by etching the insulating film 83 using the photosensitive resin layer 84 in which the opening 85 is formed as a mask.
Next, as shown in FIG. 9C, the conductive layer 86 connected to the pad electrode 82 is formed to a height in the middle of the opening 85 by using electroless plating. As the conductive layer 86, for example, a hard metal such as nickel Ni or copper Cu can be used.

  Next, the plating solution is replaced and electroless plating is used to form a conductive layer 87 connected to the conductive layer 86 to a height in the middle of the opening 85, and the photosensitive resin layer 84, the conductive layer 87, A step is provided between the two. Note that the height of the step is preferably smaller than the average diameter of the ACF particles. Further, as the conductive layer 87, for example, a soft metal such as gold Au can be used. Further, as the conductive layer 87, for example, a solder material such as Sn, Sn—Pb, Sn—Ag, Sn—Cu, or Sn—Zu may be used.

Next, as shown in FIG. 9D, the photosensitive resin layer 84 is removed so that the photosensitive resin layer 84 remains around the conductive layers 86 and 87, so that the periphery of the conductive layers 86 and 87 is removed. A bump electrode covered with the photosensitive resin layer 84 is formed.
As a result, it is possible to confine the ACF particles on the conductive layer 87 while making it possible to configure the bump electrode with the conductive layers 86 and 87 made of different materials, and the conductive layer 87 can absorb damage at the time of bonding. It becomes possible to capture the ACF particles on the conductive layer 87 efficiently.

  Therefore, even when the pump electrode is joined through the anisotropic conductive layer, it is possible to prevent the ACF particles from flowing out from the top of the pump electrode, and the photosensitive resin layer 84 and the conductive layer 87. Both of them can be used to alleviate damage at the time of bonding, and the connection reliability of the bump electrode using the anisotropic conductive layer can be improved.

10 and 11 are sectional views showing a bump electrode manufacturing method according to the tenth embodiment of the present invention. In the tenth embodiment, a level difference is provided between the conductive layer 96 and the photosensitive resin layer 94 after the photosensitive resin layer 94 embedded with the conductive layer 96 is planarized.
In FIG. 10A, a pad electrode 92 is provided on a semiconductor substrate 91 in which an active region is formed, and an insulating film 93 is formed on the semiconductor substrate 91 including the pad electrode 92. Then, a photosensitive resin layer 94 is formed on the semiconductor substrate 91 on which the insulating film 93 is formed.

Next, as shown in FIG. 10B, an opening 95 is formed on the pad electrode 92 by exposing and developing the photosensitive resin layer 94. The pad electrode 92 is exposed by etching the insulating film 93 using the photosensitive resin layer 94 in which the opening 95 is formed as a mask.
Next, as shown in FIG. 10C, by using electroless plating, the conductive layer 96 is raised on the photosensitive resin layer 94 so that the conductive layer 96 connected to the pad electrode 92 is opened. 95.
When the conductive layer 96 is formed in the opening 95, electrolytic plating or an ink jet method may be used in addition to electroless plating.

Next, as shown in FIG. 10D, by polishing the surface of the photosensitive resin layer 94 in which the conductive layer 96 is embedded, for example, using a method such as CMP (chemical mechanical polishing), The surface of the photosensitive resin layer 94 is flattened.
Next, as shown in FIG. 10E, a step is provided between the photosensitive resin layer 94 and the conductive layer 96 by etching the conductive layer 96 embedded in the photosensitive resin layer 94. Note that the height of the step is preferably smaller than the average diameter of the ACF particles.

Next, as shown in FIG. 10F, the photosensitive resin layer 94 is removed so that the photosensitive resin layer 94 remains around the conductive layer 96, so that the conductive layer 96 is surrounded by the photosensitive resin. A bump electrode covered with the layer 94 is formed.
Accordingly, when the surface of the photosensitive resin layer 94 in which the conductive layer 96 is embedded is flattened, the height of the conductive layer 96 and the height of the photosensitive resin layer 94 can be matched. Both the thickness variation and the thickness variation of the resin layer 94 can be made uniform.

  For this reason, it is possible to determine the variation in the level difference between the conductive layer 96 and the resin layer 94 by the variation in etching the conductive layer 96, and the surface of the conductive layer 96 becomes lower than the surface of the resin layer 94. As described above, it is possible to reduce variation in the level difference between the conductive layer 96 and the resin layer 94 as compared with the method of embedding the conductive layer 96 in the opening 95.

12 and 13 are cross-sectional views illustrating a bump electrode manufacturing method according to an eleventh embodiment of the present invention. In the eleventh embodiment, after planarizing the photosensitive resin layer 104 in which the bump electrode is embedded, a step is provided between the bump electrode and the photosensitive resin layer 104, and the bump electrode is connected to the conductive layer 106, A two-layer structure consisting of 107 is used.
In FIG. 12A, a pad electrode 102 is provided on a semiconductor substrate 101 in which an active region is formed, and an insulating film 103 is formed on the semiconductor substrate 101 including the pad electrode 102. Then, a photosensitive resin layer 104 is formed over the semiconductor substrate 101 over which the insulating film 103 is formed.

Next, as shown in FIG. 12B, an opening 105 is formed on the pad electrode 102 by exposing and developing the photosensitive resin layer 104. Then, the insulating film 103 is etched using the photosensitive resin layer 104 in which the opening 105 is formed as a mask to expose the pad electrode 102.
Next, as shown in FIG. 12C, the conductive layer 106 connected to the pad electrode 102 is formed to a height in the middle of the opening 105 by using electroless plating. As the conductive layer 106, for example, a hard metal such as nickel Ni or copper Cu can be used.

Further, by replacing the plating solution and performing electroless plating, the conductive layer 107 is formed on the photosensitive resin layer 104 so that the conductive layer 107 connected to the conductive layer 106 is formed in the opening 105. . As the conductive layer 107, for example, a soft metal such as gold Au can be used. Further, as the conductive layer 107, for example, a solder material such as Sn, Sn—Pb, Sn—Ag, Sn—Cu, Sn—Zu may be used.
Note that when the conductive layers 106 and 107 are formed in the opening 105, electrolytic plating or an ink jet method may be used in addition to electroless plating.

Next, as shown in FIG. 12D, the surface of the photosensitive resin layer 104 in which the conductive layers 106 and 107 are embedded is polished using a method such as CMP (chemical mechanical polishing), for example. Thus, the surface of the photosensitive resin layer 104 is flattened.
Next, as illustrated in FIG. 12E, a step is provided between the photosensitive resin layer 104 and the conductive layer 107 by etching the conductive layer 107 embedded in the photosensitive resin layer 104. Note that the height of the step is preferably smaller than the average diameter of the ACF particles.
Next, as shown in FIG. 12F, the photosensitive resin layer 104 is removed so that the photosensitive resin layer 104 remains around the conductive layers 106 and 107, so that the periphery of the conductive layer 106 is exposed to light. A bump electrode covered with the conductive resin layer 104 is formed.

Accordingly, when the surface of the photosensitive resin layer 104 in which the conductive layers 106 and 107 are embedded is flattened, the height of the conductive layer 107 and the height of the photosensitive resin layer 104 can be matched. Both the variation in the thicknesses 106 and 107 and the variation in the thickness of the resin layer 104 can be made uniform.
Therefore, it is possible to form bump electrodes with conductive layers 106 and 107 made of different materials, and the variation in the level difference between the conductive layer 106 and the resin layer 104 is determined by the variation in etching the conductive layer 107. It becomes possible to do.

Accordingly, it is possible to reduce the difference in level difference between the conductive layer 106 and the resin layer 104, and to reduce damage at the time of bonding using the photosensitive resin layer 104 and the conductive layer 107. It becomes possible to easily improve the connection reliability of the bump electrode using the isotropic conductive layer.
In the above-described embodiment, the method of forming the bump electrode on the semiconductor substrate has been described. However, the present invention is not limited to the semiconductor substrate, and for example, on a glass substrate, a printed substrate, a film substrate, or a tape substrate. For example, it may be applied to a method of forming bump electrodes.

The bump electrode structure described above can be applied to electronic devices such as a liquid crystal display device, a mobile phone, a portable information terminal, a video camera, a digital camera, and an MD (Mini Disc) player. It is possible to reduce the size and weight of the electronic device without deteriorating the thickness.
In the embodiment described above, the method of covering the periphery of the bump electrode with the photosensitive resin has been described. However, the periphery of the bump electrode may be covered with a thermosetting resin such as an epoxy resin. A lithography technique can be used to pattern a non-photosensitive resin such as a thermosetting resin.

It is sectional drawing which shows the manufacturing method of the bump electrode which concerns on 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the module structure which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the module structure which concerns on 3rd Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the bump electrode which concerns on 4th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the bump electrode which concerns on 5th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the bump electrode which concerns on 6th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the bump electrode which concerns on 7th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the module structure which concerns on 8th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the bump electrode which concerns on 9th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the bump electrode which concerns on 10th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the bump electrode which concerns on 10th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the bump electrode which concerns on 11th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the bump electrode which concerns on 11th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the conventional bump electrode.

Explanation of symbols

  1, 31, 41, 51, 61, 81, 91, 101 Semiconductor substrate 2, 32, 42, 52, 62, 82, 92, 102 Pad electrode 3, 33, 43, 53, 63, 83, 93, 103 insulating film 4, 34, 45, 54, 64, 84, 94, 104 photosensitive resin layer 5, 35, 46, 55, 65, 85, 95, 105 opening, 6, 36, 47, 66, 96 conductive layer, 10 tape substrate, 11, 22 lead electrode, 21 film substrate, 23 protective film, 37 inkjet head, 38 droplet, 44 seed electrode, 56, 86, 106 first conductive layer, 57, 87, 107 first 2 conductive layers, 70 glass substrate, 71 electrodes, 72 anisotropic conductive sheet, 73 ACF particles

Claims (21)

A protruding electrode formed on the pad electrode;
And a resin layer provided so as to individually surround the protruding electrodes. 2. The terminal electrode according to claim 1, wherein the protruding electrode has a multilayer structure in which conductive materials having different hardnesses are laminated, and a soft conductive material is used for an uppermost layer of the multilayer structure. The terminal electrode according to claim 1, wherein the protruding electrode is raised on the resin layer. 2. The surface of the protruding electrode is formed at a position lower than the surface of the resin layer so that the step between the protruding electrode and the resin layer is smaller than the diameter of the ACF particles. Or the terminal electrode of 2. A semiconductor substrate on which an active region is formed;
A pad electrode formed on the semiconductor substrate;
A protruding electrode formed on the pad electrode;
A semiconductor device comprising: a resin layer provided so as to individually surround the protruding electrodes. A semiconductor substrate on which an active region is formed;
A pad electrode formed on the semiconductor substrate;
A protruding electrode formed on the pad electrode;
A resin layer provided so as to individually surround the protruding electrodes;
A semiconductor module comprising: a circuit board on which a lead electrode joined to the protruding electrode is formed. A semiconductor substrate on which an active region is formed;
A pad electrode formed on the semiconductor substrate;
A protruding electrode formed on the pad electrode;
A resin layer provided so as to individually surround the protruding electrodes such that the step with the protruding electrodes is smaller than the diameter of the ACF particles;
A circuit board on which a lead electrode disposed opposite to the protruding electrode is formed;
A semiconductor module, comprising: an anisotropic conductive layer disposed between the semiconductor substrate and the circuit board and conducting the protruding electrode and the lead electrode. A semiconductor substrate on which an active region is formed;
A pad electrode formed on the semiconductor substrate;
A protruding electrode formed on the pad electrode;
A resin layer provided so as to individually surround the protruding electrodes;
A circuit board on which a lead electrode joined to the protruding electrode is formed;
An electronic device comprising: an electronic component connected to the circuit board. A semiconductor substrate on which an active region is formed;
A pad electrode formed on the semiconductor substrate;
A protruding electrode formed on the pad electrode;
A resin layer provided so as to individually surround the protruding electrodes such that the step with the protruding electrodes is smaller than the diameter of the ACF particles;
A circuit board on which a lead electrode disposed opposite to the protruding electrode is formed;
An anisotropic conductive layer disposed between the semiconductor substrate and the circuit board and conducting the protruding electrode and the lead electrode;
An electronic device comprising: an electronic component connected to the circuit board. Forming a resin layer on a substrate provided with a pad electrode;
Forming an opening in the resin layer on the pad electrode;
Embedding a conductive layer in the opening;
And a step of separating the resin layer such that the conductive layer is surrounded by the resin layer. Forming a resin layer on a substrate provided with a pad electrode;
Patterning the resin layer into a cylindrical shape so that an opening is formed on the pad electrode;
And a step of embedding a conductive layer in the opening by discharging a conductive material into the opening. Forming a seed electrode on the protective film from which the pad electrode is exposed; and
Forming a resin layer on the seed electrode;
Forming an opening in a resin layer formed on the seed electrode;
Embedding a conductive layer in the opening by electrolytic plating;
Patterning the resin layer such that the conductive layer is individually surrounded by the resin layer and exposing the seed electrode;
And a step of removing the exposed seed electrode. Forming a resin layer on a substrate provided with a pad electrode;
Forming an opening in the resin layer on the pad electrode;
Embedding a conductive layer in the opening so as to rise above the opening;
Flattening the resin layer in which the conductive layer is embedded;
Removing a part of the conductive layer embedded in the resin layer such that the surface of the conductive layer is lower than the surface of the resin layer;
And a step of separating the resin layer such that the conductive layer is surrounded by the resin layer. The surface of the protruding electrode is formed at a position lower than the surface of the resin layer so that the step between the conductive layer and the resin layer is smaller than the diameter of the ACF particles. The manufacturing method of the terminal electrode of any one of -13. The conductive layer is formed of a multilayer structure in which conductive materials having different hardnesses are laminated, and a soft conductive material is used for an uppermost layer of the multilayer structure. The manufacturing method of the terminal electrode of 1 item | term. Forming an active region in a semiconductor substrate;
Forming a pad electrode on the semiconductor substrate in which the active region is formed;
Forming a resin layer on the semiconductor substrate on which the pad electrode is formed;
Forming an opening in the resin layer on the pad electrode;
Embedding a conductive layer in the opening;
And a step of separating the resin layer such that the conductive layer is surrounded by the resin layer. Forming an active region in a semiconductor substrate;
Forming a pad electrode on the semiconductor substrate in which the active region is formed;
Forming a resin layer on the semiconductor substrate on which the pad electrode is formed;
Patterning the resin layer into a cylindrical shape so that an opening is formed on the pad electrode;
And a step of embedding a conductive layer in the opening by discharging a conductive material into the opening. Forming an active region in a semiconductor substrate;
Forming a pad electrode on the semiconductor substrate in which the active region is formed;
Forming a protective film on the pad electrode;
Forming a first opening in the protective film on the pad electrode;
Forming a seed electrode on the protective film in which the first opening is formed;
Forming a resin layer on the seed electrode;
Forming a second opening in the resin layer formed on the seed electrode;
Embedding a conductive layer in the first and second openings by electrolytic plating;
Patterning the resin layer such that the conductive layer is individually surrounded by the resin layer and exposing the seed electrode;
And a step of removing the exposed seed electrode. Forming an active region in a semiconductor substrate;
Forming a pad electrode on the semiconductor substrate in which the active region is formed;
Forming a resin layer on the semiconductor substrate on which the pad electrode is formed;
Forming an opening in the resin layer on the pad electrode;
Embedding a conductive layer in the opening so as to rise above the opening;
Flattening the resin layer in which the conductive layer is embedded;
Removing a part of the conductive layer embedded in the resin layer such that the surface of the protruding electrode is lower than the surface of the resin layer;
And a step of separating the resin layer such that the conductive layer is surrounded by the resin layer. 17. The surface of the protruding electrode is formed at a position lower than the surface of the resin layer so that the step between the conductive layer and the resin layer is smaller than the diameter of the ACF particles. The manufacturing method of the semiconductor device of any one of -19. The said conductive layer is comprised from the multilayer structure on which the conductive material from which hardness differs was laminated | stacked, The soft conductive material is used for the uppermost layer of the said multilayer structure, The one of Claims 16-20 characterized by the above-mentioned. A method for manufacturing a semiconductor device according to claim 1.

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