JP2008004877A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method which can remove even a resist having a hardened layer on its front surface without damaging a substrate. <P>SOLUTION: A heating processing section 2 is provided with a plate 5 for sucking and holding a rear surface (surface opposite to a surface having a resist formed thereon) of a wafer W and heating the wafer W; and an enclosing member 6 for enclosing a space near the front surface of the wafer W held on the plate 5. The wafer W is held on the plate 5 and the enclosing member 6 is arranged so as to approximate to the front surface of the wafer W. In this state, while the atmosphere of the front surface of the wafer W is sucked from the enclosing member 6, the wafer W is heated by a heater 11 incorporated in the plate 5. This heating brings the front surface temperature of the wafer W into a high temperature of about 300°C or more and a popping phenomenon occurs on a resist of the front surface of the wafer W, and the hardened layer on the surface of the resist is broken. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method used for removing unnecessary resist from the surface of a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photo A mask substrate is included.

  The manufacturing process of a semiconductor device includes, for example, a step of locally implanting impurities (ions) such as phosphorus, arsenic, and boron into the surface of a semiconductor wafer (hereinafter simply referred to as “wafer”). In this step, in order to prevent ion implantation to an undesired portion, a resist made of a photosensitive resin is patterned on the surface of the wafer, and a portion not desired for ion implantation is masked by the resist. Since the resist patterned on the surface of the wafer becomes unnecessary after the ion implantation, a resist removal process for removing the unnecessary resist on the surface of the wafer is performed after the ion implantation.

  In a typical resist removal process, the surface of the wafer is irradiated with oxygen plasma, and the resist on the surface of the wafer is ashed. Then, a chemical solution such as SPM (sulfuric acid / hydrogen peroxide mixture) which is a mixed solution of sulfuric acid and hydrogen peroxide solution is supplied to the surface of the wafer, and the ashed resist is removed. Thus, the removal of the resist from the surface of the wafer is achieved.

However, irradiation with oxygen plasma for ashing the resist damages a portion of the wafer surface that is not covered with the resist (for example, an oxide film exposed from the resist).
Therefore, recently, without ashing the resist, SPM is supplied to the surface of the wafer, and the resist is peeled off from the surface of the wafer by the strong oxidizing power of peroxomonosulfuric acid (H ₂ SO ₅ ) contained in this SPM. Thus, the removal method has been attracting attention.
JP 2005-32819 A

However, in a wafer subjected to ion implantation (particularly, high-dose ion implantation), the resist surface has been altered (cured), so even if SPM is supplied, the resist cannot be satisfactorily removed from the wafer surface. There is a case.
Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can remove even a resist having a hardened layer on the surface thereof without damaging the substrate.

  The invention according to claim 1 for achieving the above object is a substrate processing apparatus (1) used for removing a resist from the surface of a substrate (W), wherein the substrate holding means (1) holds a substrate. 5) substrate heating means (11) for heating the substrate held by the substrate holding means to a temperature at which resist popping occurs, and air intake means for sucking the atmosphere on the surface of the substrate held by the substrate holding means (6, 17, 18; 61), and a resist removal processing unit (3) for removing a resist on the surface of the substrate by supplying a resist stripping solution to the substrate heated by the heating processing unit. And a substrate processing apparatus.

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this configuration, the substrate can be heated to cause a popping (bumping) phenomenon in the resist on the surface of the substrate. When this popping phenomenon occurs, even if a hardened layer is formed on the surface of the resist, the hardened layer is destroyed by the impact of popping the resist underneath. That is, the cured layer formed on the resist surface can be destroyed by heating the substrate to a temperature at which the resist popping phenomenon occurs. Therefore, if a resist stripping solution is supplied to the surface of the substrate after the heat treatment of the substrate, the resist stripping solution penetrates into the resist from the broken portion of the cured layer, and the resist is peeled off from the substrate surface together with the cured layer. And can be removed. In addition, since ashing is unnecessary, the problem of damage due to ashing can be avoided.

Further, when a popping phenomenon occurs in the resist, broken pieces of resist are scattered from the surface of the substrate. At this time, if the suction means is driven, the pieces of resist can be sucked together with the atmosphere. Therefore, it is possible to prevent resist fragments generated when the substrate is heated from diffusing around.
According to a second aspect of the present invention, the air intake means has an air intake port (14) that can face the entire surface of the substrate held by the substrate holding means, and the air intake port is brought close to the surface of the substrate. And an enclosure member (6) for enclosing the space on the surface of the substrate, and an intake passage (18) for sucking the atmosphere in the space surrounded by the enclosure member. The substrate processing apparatus according to claim 1.

  According to this configuration, the space on the surface of the substrate surrounded by the surrounding member can be reduced in pressure by bringing the surrounding member close to the surface of the substrate and performing intake from the air intake port of the surrounding member. . If the space on the surface of the substrate is reduced in pressure when the substrate is heated, the resist popping phenomenon on the surface of the substrate can be caused at a lower temperature. Therefore, when the hardened layer is formed on the surface of the resist, the hardened layer can be destroyed with less energy.

According to a third aspect of the present invention, the intake means is provided so as to be movable in a direction parallel to the surface of the substrate held by the substrate holding means, and the intake port (62) arranged to face the surface of the substrate. The substrate processing apparatus according to claim 1, further comprising: an intake head having an intake path and an intake passage connected to the intake head.
According to this configuration, the suction head is formed in a small size by moving the suction head in a direction parallel to the surface of the substrate and sucking from the suction port. Layer debris can be aspirated.

  The invention according to claim 4 is a substrate processing method used for removing the resist from the surface of the substrate (W), the substrate heating step for heating the substrate to a temperature at which resist popping occurs, and the substrate In parallel with the heating step, an intake step for sucking the atmosphere on the surface of the substrate, a resist removal step for supplying a resist stripping solution to the substrate heated in the substrate heating step and removing the resist on the surface of the substrate, And a substrate processing method.

  According to this method, an effect similar to the effect described in relation to claim 1 can be obtained.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing the configuration of a substrate processing apparatus according to an embodiment of the present invention.
The substrate processing apparatus 1 is used for processing for removing unnecessary resist from the surface of the wafer W after ion implantation processing for implanting impurities into the surface of the wafer W (see FIG. 2) as an example of the substrate. It is a single wafer type device. The substrate processing apparatus 1 heats the wafer W to cause a popping phenomenon on the resist on the surface of the wafer W, and applies SPM to the surface of the wafer W processed by the heat processing unit 2. And an SPM processing unit 3 for peeling off and removing the resist from the surface of the wafer W.

FIG. 2 is a cross-sectional view schematically showing the configuration of the heat treatment unit 2.
The heat processing unit 2 includes a processing chamber 4 capable of sealing the inside. In this processing chamber 4, the back surface of the wafer W (the surface opposite to the surface on which the resist is formed) is sucked and held, and a plate 5 for heating the wafer W, and the plate 5 holds the wafer W. An enclosing member 6 for enclosing a space near the surface of the wafer W is disposed.

  For example, the plate 5 is formed in a disk shape larger in diameter than the wafer W, and is disposed substantially horizontally. The lower surface of the plate 5 serves as an adsorption surface for adsorbing the wafer W, and the lower surface of the plate 5 is adsorbed on the lower surface, so that the wafer W can be held in a face-down horizontal posture with the surface facing downward. . That is, a plurality of suction holes 7 are formed on the lower surface of the plate 5. Each suction hole 7 is connected to a branched tip of a suction path 8 formed inside the plate 5. A suction pipe 10 extending from a holding suction mechanism 9 including a vacuum source (not shown) such as a vacuum pump is connected to the proximal end of the suction path 8. As a result, when the holding and suction mechanism 9 is driven in a state where the back surface of the wafer W is in contact with or close to the lower surface of the plate 5, the air in the suction path 8 is sucked into the suction tube 10 and the back surface of the wafer W is Is sucked to the lower surface of the plate 5.

In addition, a heater 11 for heating the wafer W is provided inside the plate 5. By adsorbing the back surface of the wafer W to the lower surface of the plate 5 and driving the heater 11, the wafer W can be heated.
The surrounding member 6 is formed in a circular shape in plan view having a slightly larger diameter than the wafer W, and the central axis thereof is aligned with the vertical axis passing through the center of the wafer W held by the plate 5 so as to be below the plate 5. It can be moved up and down. The surrounding member 6 is integrally provided with a facing portion 12 that is disposed to face the surface of the wafer W held by the plate 5 and a peripheral surface portion 13 that rises upward from the peripheral edge of the facing portion 12. The upper surface of the surrounding member 6 is open and forms an air inlet 14 that can face the entire surface of the wafer W held by the plate 5.

An exhaust port 15 is formed through the central portion of the facing portion 12. In addition, a cylindrical support shaft 16 extending downward is coupled to the central portion of the facing portion 12. The inside of the support shaft 16 communicates with the exhaust port 15. The support shaft 16 is connected to an intake pipe 18 extending from a vacuum suction mechanism 17 including a negative pressure source (not shown).
The support shaft 16 is coupled to an elevating drive mechanism 19 including a drive source (not shown) such as a motor. The lifting drive mechanism 19 can move the support shaft 16 up and down, and the proximity position (position indicated by a solid line in FIG. 2) where the surrounding member 6 is close to the plate 5 and the retreat position (see FIG. 2) (position indicated by a virtual line in FIG. 2).

The wafer W subjected to the processing in the heat processing unit 2 is carried into the processing chamber 4 by a transfer robot (not shown) and transferred to the plate 5. At this time, the surrounding member 6 is retracted to the retracted position below the plate 5. The heater 11 is already turned on (driven state).
When the wafer W is held on the plate 5, the lifting drive mechanism 19 is driven, and the surrounding member 6 is moved from the retracted position to the close position. In a state in which the surrounding member 6 is disposed in the proximity position, the air inlet 14 and the surface of the wafer W held by the plate 5 are close to each other with a predetermined interval (for example, 2 to 5 mm) in the vertical direction. The space on the surface is surrounded by the surrounding member 6. Further, a slight gap is formed between the peripheral edge of the wafer W and the upper end edge of the facing portion 12 of the surrounding member 6, and the space surrounded by the surrounding member 6 (the space on the surface of the wafer W) is a slight amount. It communicates with the outside through a gap.

  Next, the vacuum suction mechanism 17 is driven, and the atmosphere in the space surrounded by the surrounding member 6 is sucked into the intake pipe 18. As a result, air is sucked into the space surrounded by the surrounding member 6 from the gap between the peripheral edge of the wafer W and the upper end edge of the facing portion 12 of the surrounding member 6, and an air flow from the gap toward the exhaust port 15 is formed. Is done. At this time, the inflow amount of air from the gap between the peripheral edge of the wafer W and the upper end edge of the facing portion 12 of the surrounding member 6 is smaller than the exhaust amount from the exhaust port 15, and the space surrounded by the surrounding member 6. Is in a reduced pressure state where the atmospheric pressure is lower than that of the external space.

  In this state, the wafer W held on the plate 5 is heated by the heat generated from the heater 11. By this heating, the surface temperature of the wafer W reaches a high temperature of about 300 ° C. or more, and a popping phenomenon occurs in the resist on the surface of the wafer W. Therefore, even if a hardened layer is formed on the surface of the resist, the hardened layer is destroyed by the impact of popping the resist underneath. At this time, the broken resist pieces are scattered, and the resist pieces are exhausted from the exhaust port 15 of the surrounding member 6 by riding on the airflow formed in the space surrounded by the surrounding member 6. Thereby, resist fragments generated when the wafer W is heated can be prevented from diffusing around.

  When the heating of the wafer W is continued for a predetermined time, the heater 11 is turned off. Then, while the vacuum suction mechanism 17 is driven, the elevating drive mechanism 19 is driven, and the surrounding member 6 is returned from the close position to the retracted position. Since the vacuum suction mechanism 17 is driven, the surrounding member 6 moves to the retracted position even if resist fragments remain in the atmosphere near the surface of the wafer W (in the space surrounded by the surrounding member 6). In the meantime, the resist fragments can be sucked and discharged from the exhaust port 15. Therefore, it is possible to prevent resist fragments from diffusing into the processing chamber 4 even after the heating of the wafer W is completed.

The wafer W thus processed is unloaded from the heat processing unit 2 (processing chamber 4) by a transfer robot (not shown) and loaded into the SPM processing unit 3 described below.
FIG. 3 is a cross-sectional view schematically showing the configuration of the SPM processing unit 3.
The SPM processing unit 3 holds, in the processing chamber 20, a spin chuck 21 for holding and rotating the wafer W in a horizontal posture, and SPM as a resist stripping solution on the surface of the wafer W held by the spin chuck 21. The SPM nozzle 22 for supplying, the DIW nozzle 23 for supplying DIW (deionized water) to the surface of the wafer W held by the spin chuck 21, and the periphery of the spin chuck 21 are surrounded. And a cup 24 for receiving SPM and DIW flowing down or scattered from the wafer W.

  The spin chuck 21 is provided at substantially equal angular intervals in a motor 25, a disk-shaped spin base 26 that is rotated around the vertical axis by the rotational driving force of the motor 25, and a plurality of locations on the peripheral edge of the spin base 26. A plurality of clamping members 27 are provided for clamping the wafer W in a substantially horizontal posture. As a result, the spin chuck 21 keeps the wafer W in a horizontal posture by rotating the spin base 26 by the rotational driving force of the motor 25 in a state where the wafer W is held by the plurality of holding members 27. In this state, it can be rotated around the vertical axis together with the spin base 26.

Note that the spin chuck 21 is not limited to such a configuration. For example, the back surface (non-device surface) of the wafer W is vacuum-sucked to hold the wafer W in a horizontal posture, and further in that state. A vacuum chuck of a vacuum suction type that can rotate the wafer W held by rotating around a vertical axis may be employed.
The SPM nozzle 22 is disposed above the spin chuck 21 with the discharge port facing the vicinity of the rotation center of the wafer W. An SPM supply pipe 28 is connected to the SPM nozzle 22, and SPM is supplied from the SPM supply pipe 28. The SPM supply pipe 28 is supplied with SPM that has been heated to a high temperature of about 80 ° C. or higher so that the resist on the surface of the wafer W can be satisfactorily peeled off. Such a high-temperature SPM is created, for example, by supplying sulfuric acid and hydrogen peroxide water to a mixing valve (not shown) connected to the SPM supply pipe 28 and mixing them with the mixing valve. It is supplied to the SPM supply pipe 28. An SPM valve 29 for controlling the supply of SPM to the SPM nozzle 22 is interposed in the middle of the SPM supply pipe 28.

  The DIW nozzle 23 is disposed above the spin chuck 21 with the discharge port facing the vicinity of the rotation center of the wafer W. A DIW supply pipe 30 is connected to the DIW nozzle 23 so that DIW from a DIW supply source is supplied through the DIW supply pipe 30. A DIW valve 31 for controlling the supply of DIW to the DIW nozzle 23 is interposed in the middle of the DIW supply pipe 30.

The wafer W carried into the SPM processing unit 3 (processing chamber 20) is held by the spin chuck 21 in a face-up horizontal posture with its surface facing upward.
When the wafer W is held by the spin chuck 21, the motor 25 is driven and rotation of the wafer W is started. Then, the SPM valve 29 is opened, and SPM is supplied from the SPM nozzle 22 to the vicinity of the rotation center on the surface of the wafer W. The SPM supplied to the surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, flows on the surface of the wafer W from the central portion toward the peripheral edge, and spreads over the entire surface of the wafer W.

  In the resist on the surface of the wafer W, the hardened layer on the surface is destroyed by the processing in the heat processing unit 2. Therefore, the SPM supplied to the surface of the wafer W penetrates into the resist from the broken portion of the hardened layer. As a result, the strong oxidizing power of SPM acts on the resist, and the resist is peeled off (lifted off) together with the hardened layer from the surface of the wafer W and removed.

  When a predetermined time elapses from the start of SPM supply, the SPM valve 29 is closed and the supply of SPM to the surface of the wafer W is stopped. Then, the DIW valve 31 is opened while the rotation of the wafer W is continued, and DIW is supplied from the DIW nozzle 23 to the vicinity of the rotation center of the surface of the wafer W. The DIW supplied onto the surface of the wafer W receives a centrifugal force due to the rotation of the wafer W and flows on the surface of the wafer W from the central portion toward the periphery. As a result, the DIW spreads over the entire surface of the wafer W, and the SPM on the surface of the wafer W is washed away by the DIW.

  When a predetermined time has elapsed from the start of the DIW process, the DIW valve 31 is closed and the supply of DIW to the surface of the wafer W is stopped. Thereafter, the rotation speed of the wafer W is increased to a predetermined high rotation speed (for example, 2500 to 5000 rpm), and the DIW adhering to the wafer W is shaken off and dried. When the spin dry process is performed for a predetermined time, the driving of the motor 25 is stopped and the rotation of the wafer W is stopped, and then the wafer W is unloaded from the SPM processing unit 3 by the transfer robot.

  As described above, even if the resist on the surface of the wafer W has a hardened layer, the heat treatment unit 2 heats the wafer W to cause a popping phenomenon on the resist on the surface of the wafer W. The hardened layer can be destroyed. Therefore, when SPM is supplied to the surface of the wafer W in the SPM processing unit 3 after the heat processing in the heat processing unit 2, the SPM supplied to the surface of the wafer W is resisted from the broken portion of the cured layer. Can penetrate inside. Therefore, the resist having the hardened layer can be satisfactorily removed from the surface of the wafer W without ashing the resist. Since resist ashing is unnecessary, the problem of damage to the surface of the wafer W due to ashing can be avoided.

  Further, when a popping phenomenon occurs in the resist, broken pieces of the resist are scattered from the surface of the wafer W. At this time, the surrounding member 6 is disposed at a position close to the wafer W, and the vacuum suction mechanism 17 is driven. Therefore, the resist fragments are sucked on the airflow formed in the surrounding member 6. Therefore, resist fragments can be prevented from diffusing around.

In addition, when the vacuum suction mechanism 17 is driven in a state where the surrounding member 6 is close to the surface of the wafer W, the space on the surface of the wafer W surrounded by the surrounding member 6 is in a reduced pressure state. Therefore, the resist popping phenomenon on the surface of the wafer W can be generated at a lower temperature. As a result, the hardened layer on the surface of the resist can be destroyed with less energy.
FIG. 4 is a cross-sectional view schematically showing another configuration of the heat treatment unit 2. In FIG. 4, parts corresponding to the above-described parts are denoted by the same reference numerals as those parts. Further, in the following, detailed description of each part given the same reference numeral is omitted.

The heat treatment unit 2 shown in FIG. 4 has a configuration that is inverted from the heat treatment unit 2 shown in FIG. That is, the plate 5 is arranged with the suction surface for sucking the wafer W facing upward. The surrounding member 6 is arranged above the plate 5 with the air inlet 14 facing the plate 5 (downward).
Also with this configuration, the same processing as that performed on the wafer W in the heat processing unit 2 shown in FIG. 2 can be achieved, and the same operational effects as those described above can be achieved.

FIG. 5 is a sectional view schematically showing another configuration of the plate 5. In FIG. 5, parts corresponding to the above-described parts are denoted by the same reference numerals as those parts. Further, in the following, detailed description of each part given the same reference numeral is omitted.
The plate 5 shown in FIG. 5 can be suitably used for the heat treatment unit 2 shown in FIG. 4, and a plurality of suction holes 7 are formed on the upper surface of the plate 5. A plurality of support pins 51 are arranged on the upper surface of the plate 5. Further, a ring-shaped guide 52 is disposed on the peripheral edge of the upper surface of the plate 5. A seal member 54 such as an O-ring is provided on the support surface 53 that contacts the back surface (lower surface) of the wafer W of the guide 52.

  A plurality of elevating pins 55 are provided on the inner side of the guide 52 so as to be movable up and down on the circumference concentric with the guide 52. The plurality of elevating pins 55 are coupled to a support member 56 below the plate 5 and can be moved up and down integrally. The plurality of elevating pins 55 are driven up and down by a pin elevating drive mechanism 57 constituted by an air cylinder or the like. Each lifting pin 55 is inserted through an insertion hole 58 provided in the plate 5.

  With this configuration, the wafer W can be horizontally supported by the plurality of support pins 51 in a substantially point contact state with the back surface of the wafer W. Then, the peripheral edge of the back surface of the wafer W is sealed by the sealing member 54 and sucked from the plurality of suction holes 7 so that the wafer W is sucked to the upper surface of the plate 5 via the support pins 51. Can be supported. Further, the wafer W can be lifted from the support pins 51 by lifting and lowering the plurality of lift pins 55 in a state in which suction to the upper surface of the plate 5 is released (intake of suction from the suction holes 7 is stopped). W can be placed on the support pin 51.

FIG. 6 is a cross-sectional view schematically showing still another configuration of the heat treatment unit 2. In FIG. 6, parts corresponding to the above-described parts are denoted by the same reference numerals as those parts. Further, in the following, detailed description of each part given the same reference numeral is omitted.
6 is replaced with the surrounding member 6 of the heat treatment unit 2 shown in FIG. 4, and an intake head that is movable in a direction (horizontal direction) parallel to the surface of the wafer W held on the plate 5. 61 is provided.

  The intake head 61 has an intake port 62 that opens toward the surface of the wafer W held by the plate 5. For example, the air inlet 62 is formed in a slit shape (rectangular shape) having substantially the same length as the diameter of the wafer W. An exhaust port 63 is formed on the upper surface of the intake head 61, and a cylindrical support shaft 64 extending upward from the periphery of the exhaust port 63 is coupled to the exhaust head 63. The support shaft 64 is connected to an intake pipe 18 extending from a vacuum suction mechanism 17 including a negative pressure source (not shown), and a horizontal movement mechanism 65 for horizontally moving the intake head 61 is coupled.

  When the wafer W is heated by the plate 5, the vacuum suction mechanism 17 and the horizontal movement mechanism 65 are driven, and the suction head 61 is in a direction parallel to the surface of the wafer W at a position where the suction port 62 is close to the surface of the wafer W. Move to. As a result, the hardened layer fragments generated by the resist popping phenomenon on the surface of the wafer W are sucked into the suction port 62 of the suction head 61 and discharged from the exhaust port 63 of the suction head 61. Therefore, the intake head 61 having a size smaller than that of the surrounding member 6 is employed, and the heat treatment unit 2 can be reduced in size, but resist fragments generated when the wafer W is heated are prevented from diffusing around. Can do.

  As mentioned above, although several embodiment of this invention was described, this invention can also be implemented with another form. For example, the structure in which the heater 11 is built in the plate 5 and the wafer W is heated by the heater 11 is taken up. However, an infrared lamp heater is disposed at a position facing the surface of the wafer W held on the plate 5. The wafer W may be heated by an infrared lamp heater. In this case, the heater 11 may be built in the plate 5 or may be omitted.

In addition, SPM is used as the resist stripping solution. However, not only SPM, but also a solution having the ability to strip the resist, for example, ozone sulfate produced by mixing sulfuric acid and ozone gas is used. Also good.
In addition, various design changes can be made within the scope of matters described in the claims.

1 is a diagram schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present invention. It is sectional drawing which shows the structure of a heat processing part schematically. It is sectional drawing which shows the structure of a SPM process part illustratively. It is sectional drawing which shows the other structure of a heat processing part typically. It is sectional drawing which shows the other structure of a plate schematically. It is sectional drawing which shows still another structure of a heat processing part schematically.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 6 Enclosing member 11 Heater 14 Intake port 17 Depressurization suction mechanism 18 Intake pipe 61 Intake head 62 Intake port W Wafer

Claims (4)

A substrate processing apparatus used for removing a resist from a surface of a substrate,
Substrate holding means for holding the substrate, substrate heating means for heating the substrate held by the substrate holding means to a temperature at which resist popping occurs, and the atmosphere on the surface of the substrate held by the substrate holding means is sucked A heat treatment unit comprising air intake means;
A substrate processing apparatus, comprising: a resist removal processing unit that supplies a resist stripping solution to the substrate heated by the heat processing unit to remove the resist on the surface of the substrate. The intake means is
An enveloping member having an air inlet that can be opposed to the entire surface of the substrate held by the substrate holding means, and surrounding the space on the surface of the substrate by bringing the air inlet close to the surface of the substrate; ,
The substrate processing apparatus according to claim 1, further comprising: an intake passage for sucking an atmosphere in a space surrounded by the surrounding member. The intake means is
An intake head having an intake port provided so as to be movable in a direction parallel to the surface of the substrate held by the substrate holding means, and arranged to face the surface of the substrate;
The substrate processing apparatus according to claim 1, further comprising an intake passage connected to the intake head. A substrate processing method used for removing a resist from a surface of a substrate,
A substrate heating step for heating the substrate to a temperature at which resist popping occurs,
In parallel to this substrate heating step, an intake step for sucking the atmosphere on the surface of the substrate,
A resist removal step of supplying a resist stripping solution to the substrate heated in the substrate heating step to remove the resist on the surface of the substrate.

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