JP2008004837A - 気化器への原料液供給ユニット - Google Patents
気化器への原料液供給ユニット Download PDFInfo
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- JP2008004837A JP2008004837A JP2006174323A JP2006174323A JP2008004837A JP 2008004837 A JP2008004837 A JP 2008004837A JP 2006174323 A JP2006174323 A JP 2006174323A JP 2006174323 A JP2006174323 A JP 2006174323A JP 2008004837 A JP2008004837 A JP 2008004837A
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- raw material
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- vaporizer
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- 239000007788 liquid Substances 0.000 title claims abstract description 311
- 239000002994 raw material Substances 0.000 title claims abstract description 183
- 239000006200 vaporizer Substances 0.000 title claims abstract description 72
- 238000004140 cleaning Methods 0.000 claims abstract description 91
- 238000010926 purge Methods 0.000 claims abstract description 76
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 13
- 239000012530 fluid Substances 0.000 claims description 20
- 239000000203 mixture Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 75
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 150000003839 salts Chemical class 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/003—Housing formed from a plurality of the same valve elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K7/00—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves
- F16K7/12—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm
- F16K7/14—Diaphragm valves or cut-off apparatus, e.g. with a member deformed, but not moved bodily, to close the passage ; Pinch valves with flat, dished, or bowl-shaped diaphragm arranged to be deformed against a flat seat
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/4238—With cleaner, lubrication added to fluid or liquid sealing at valve interface
- Y10T137/4245—Cleaning or steam sterilizing
- Y10T137/4259—With separate material addition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/877—With flow control means for branched passages
- Y10T137/87885—Sectional block structure
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】マニホールド20の上面に、上流側から順に、パージガス供給バルブ30、クリーニング液供給バルブ40、第1原料液供給バルブ50、第2原料液供給バルブ60、およびドレイン導入バルブ70を一列に並べ一体に取り付けるとともに、マニホールド20の左側面に気化器導入バルブ80を取り付けて原料液供給ユニット10を構成する。そして、パージガス供給バルブ30、クリーニング液供給バルブ40、第1原料液供給バルブ50、第2原料液供給バルブ60、およびドレイン導入バルブ70のうち隣接するバルブ同士の各弁ポート33,43,53,63,73を、マニホールド20内に形成したV字形流路23,24,25,26により接続する。
【選択図】図1
Description
また、前者の原料液供給ラインでは、洗浄時にクリーニング液をメインライン105に供給するときに、原料液供給ライン101あるいは102に液溜まり(デッドスペース)が生じてしまう。また、パージガスをメインライン105に供給するときには、原料液供給ライン101,102、クリーニング液供給ライン103に液溜まり(デッドスペース)が生じてしまう。このため、残留液の置換性(液−液置換性および液−ガス置換性)が悪く、残留液の置換に時間がかかるため洗浄時間が長くなってしまい、その結果として半導体製造装置のサイクルタイムが長くなって生産効率を低下させるという問題があった。また、液−ガス置換性が非常に悪く、洗浄後に残留したクリーニング液をパージガスで完全に置換することができなかった。
これに対して、上記した後者の原料液供給ラインでは、洗浄(クリーニング)に要する時間を短縮(残留液の置換性を向上)することはできるが、非常に複雑な流路構成を備えるモノブロックバルブX1〜X4を使用しなければならないという問題があった。
20 マニホールド
21 流路
22 流路
23,24,25,26 V字形流路
23a〜26a 入力口
23b〜26b 出力口
27 連絡流路
30 パージガス供給バルブ
31 弁室
32 弁孔
33 弁孔ポート
40 クリーニング液供給バルブ
41 弁室
42 弁孔
43 弁孔ポート
50 第1原料液供給バルブ
51 弁室
52 弁孔
53 弁孔ポート
60 第2原料液供給バルブ
61 弁室
62 弁孔
63 弁孔ポート
70 ドレイン導入バルブ
71 弁室
72 弁孔
73 弁孔ポート
80 気化器導入バルブ
81 弁室
82 弁孔
83 弁孔ポート
84 弁室ポート
Claims (3)
- 原料液を気化させる気化器へ前記原料液を供給する気化器への原料液供給ユニットにおいて、
内部に流路が形成されたマニホールドと、前記マニホールドに取り付けられた複数の流体制御弁とを有し、
前記複数の流体制御弁は、
前記流路への原料液の供給を制御する原料液制御弁と、前記流路へのクリーニング液の供給を制御するクリーニング液制御弁と、前記流路へのパージガスの供給を制御するパージガス制御弁と、前記流路を流れる流体の前記気化器への導入を制御する気化器導入制御弁とを含み、
前記マニホールドの上流側から、前記パージガス制御弁、前記クリーニング液制御弁、前記原料液制御弁、前記気化器導入制御弁の順で前記マニホールドに取り付けられ、
前記流路は、
前記複数の流体制御弁のそれぞれに備わる各弁孔に連通する弁孔ポートに接続され、
前記パージガス制御弁から供給されるパージガスが前記パージガス制御弁よりも下流側に配置された前記クリーニング液制御弁および前記原料液制御弁の各弁孔ポート内に直接流入する形状とされている
ことを特徴とする気化器への原料液供給ユニット。 - 請求項1に記載する気化器への原料液供給ユニットにおいて、
前記流路は、前記パージガス制御弁、前記クリーニング液制御弁、および前記原料液制御弁のうち隣接する各弁を接続する部分がV字状に形成されるとともに、前記V字状流路同士の接続部にて前記弁孔ポートに接続されている
ことを特徴とする気化器への原料液供給ユニット。 - 請求項1または請求項2に記載する気化器への原料液供給ユニットにおいて、
前記複数の流体制御弁は、前記流路を流れる流体のドレインへの導入を制御するドレイン導入制御弁をさらに含み、
前記ドレイン導入制御弁は、前記原料液制御弁より下流側であって前記気化器導入制御弁より上流側となる位置で前記マニホールドに取り付けられている
ことを特徴とする気化器への原料液供給ユニット。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006174323A JP4256884B2 (ja) | 2006-06-23 | 2006-06-23 | 気化器への原料液供給ユニット |
US11/812,051 US7343926B2 (en) | 2006-06-23 | 2007-06-14 | Liquid raw material supply unit for vaporizer |
TW096121714A TWI346384B (en) | 2006-06-23 | 2007-06-15 | Liquid raw material supply unit for vaporizer |
KR1020070061053A KR100878575B1 (ko) | 2006-06-23 | 2007-06-21 | 기화기를 위한 원료액 공급 유닛 |
CN2007101100990A CN101093057B (zh) | 2006-06-23 | 2007-06-22 | 用于汽化器的液体原材料供应单元 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006174323A JP4256884B2 (ja) | 2006-06-23 | 2006-06-23 | 気化器への原料液供給ユニット |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008004837A true JP2008004837A (ja) | 2008-01-10 |
JP4256884B2 JP4256884B2 (ja) | 2009-04-22 |
Family
ID=38872492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006174323A Expired - Fee Related JP4256884B2 (ja) | 2006-06-23 | 2006-06-23 | 気化器への原料液供給ユニット |
Country Status (5)
Country | Link |
---|---|
US (1) | US7343926B2 (ja) |
JP (1) | JP4256884B2 (ja) |
KR (1) | KR100878575B1 (ja) |
CN (1) | CN101093057B (ja) |
TW (1) | TWI346384B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009290078A (ja) * | 2008-05-30 | 2009-12-10 | Tokyo Electron Ltd | 原料液供給ユニット |
JP2011122715A (ja) * | 2009-11-12 | 2011-06-23 | Ckd Corp | 液体集積ユニット |
US8188473B2 (en) | 2008-11-26 | 2012-05-29 | Samsung Mobile Display Co., Ltd. | Organic light emitting display |
Families Citing this family (12)
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ES2359750T3 (es) * | 2006-11-02 | 2011-05-26 | Flowcon International A/S | Un inserto regulador ajustable. |
WO2009085866A2 (en) * | 2007-12-27 | 2009-07-09 | Lam Research Corporation | Gas transport delay resolution for short etch recipes |
JP5573666B2 (ja) * | 2010-12-28 | 2014-08-20 | 東京エレクトロン株式会社 | 原料供給装置及び成膜装置 |
JP5837869B2 (ja) * | 2012-12-06 | 2015-12-24 | 株式会社フジキン | 原料気化供給装置 |
US9335768B2 (en) * | 2013-09-12 | 2016-05-10 | Lam Research Corporation | Cluster mass flow devices and multi-line mass flow devices incorporating the same |
JP6404706B2 (ja) * | 2014-12-22 | 2018-10-10 | 東京エレクトロン株式会社 | 金属汚染除去方法および金属汚染除去装置 |
KR102250139B1 (ko) | 2018-01-23 | 2021-05-10 | (주)티티에스 | 액체 소스 기화 장치 및 기화 방법 |
JP7553468B2 (ja) * | 2019-04-15 | 2024-09-18 | ラム リサーチ コーポレーション | ガス送給用のモジュール式構成要素システム |
KR102216526B1 (ko) * | 2019-06-10 | 2021-02-17 | (주)티티에스 | 밸브 조립체 |
US11808381B2 (en) | 2020-11-04 | 2023-11-07 | Swagelok Company | Valves with integrated orifice restrictions |
KR20230093446A (ko) | 2020-11-06 | 2023-06-27 | 스웨이지락 캄파니 | 밸브 캐비티 캡 장치 |
CA3230051A1 (en) * | 2021-09-27 | 2023-03-30 | Mogas Industries, Inc. | Severe service redundant pathway system and method |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100232112B1 (ko) * | 1996-01-05 | 1999-12-01 | 아마노 시게루 | 가스공급유닛 |
JP3737869B2 (ja) * | 1997-05-13 | 2006-01-25 | シーケーディ株式会社 | プロセスガス供給ユニット |
GB9724168D0 (en) * | 1997-11-14 | 1998-01-14 | Air Prod & Chem | Gas control device and method of supplying gas |
KR100556162B1 (ko) * | 1998-07-08 | 2006-03-07 | 셀레리티 인크. | 유체 분배용 제거가능한 구성 요소의 매니폴드 시스템 |
US6199580B1 (en) * | 1998-10-13 | 2001-03-13 | James M Morris | Valve manifold box and method of making same |
JP2000271471A (ja) * | 1999-03-24 | 2000-10-03 | Nippon M K S Kk | 液体ソース供給システム及びその洗浄方法、気化器 |
DE10114439B4 (de) * | 2000-04-07 | 2005-12-15 | Smc K.K. | Solenoidventilverteiler |
JP4331464B2 (ja) | 2002-12-02 | 2009-09-16 | 株式会社渡辺商行 | 気化器への原料溶液供給系及び洗浄方法 |
-
2006
- 2006-06-23 JP JP2006174323A patent/JP4256884B2/ja not_active Expired - Fee Related
-
2007
- 2007-06-14 US US11/812,051 patent/US7343926B2/en active Active
- 2007-06-15 TW TW096121714A patent/TWI346384B/zh not_active IP Right Cessation
- 2007-06-21 KR KR1020070061053A patent/KR100878575B1/ko active IP Right Grant
- 2007-06-22 CN CN2007101100990A patent/CN101093057B/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009290078A (ja) * | 2008-05-30 | 2009-12-10 | Tokyo Electron Ltd | 原料液供給ユニット |
US8188473B2 (en) | 2008-11-26 | 2012-05-29 | Samsung Mobile Display Co., Ltd. | Organic light emitting display |
US8318521B2 (en) | 2008-11-26 | 2012-11-27 | Samsung Display Co., Ltd. | Organic light emitting display and method of manufacturing the same |
JP2011122715A (ja) * | 2009-11-12 | 2011-06-23 | Ckd Corp | 液体集積ユニット |
Also Published As
Publication number | Publication date |
---|---|
CN101093057A (zh) | 2007-12-26 |
KR100878575B1 (ko) | 2009-01-15 |
KR20070122146A (ko) | 2007-12-28 |
TWI346384B (en) | 2011-08-01 |
US7343926B2 (en) | 2008-03-18 |
TW200810087A (en) | 2008-02-16 |
JP4256884B2 (ja) | 2009-04-22 |
US20070295405A1 (en) | 2007-12-27 |
CN101093057B (zh) | 2011-08-10 |
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